CN203118939U - Square flat type power device capsule - Google Patents
Square flat type power device capsule Download PDFInfo
- Publication number
- CN203118939U CN203118939U CN2013201319195U CN201320131919U CN203118939U CN 203118939 U CN203118939 U CN 203118939U CN 2013201319195 U CN2013201319195 U CN 2013201319195U CN 201320131919 U CN201320131919 U CN 201320131919U CN 203118939 U CN203118939 U CN 203118939U
- Authority
- CN
- China
- Prior art keywords
- pin
- rectification chip
- area
- power device
- weld zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a square flat type power device capsule which comprises a conducting substrate and a conducting pad. The conducting substrate comprises a radiating area and a substrate pin area. The substrate pin area comprises a plurality of negative electrode pins which are arranged at intervals. One end of each negative electrode pin is electrically connected with an end face of the radiating area which is located right below a rectifying chip and electrically connected with the lower surface of the rectifying chip through a soft solder layer. The conducting pad is located on the other side of the rectifying chip and comprises a welding area and at least two pins. The connection of the welding area with each pin is provided with bent part to allow the welding area to be higher than each pin. An aluminum conducting strip is in bridge joint between an anode of the rectifying chip and the welding area of the conducting pad. The aluminum conducting strip is welded with the rectifying chip through at least two welding strips which are arranged at intervals. By the square flat type power device capsule, ohmic contact resistance is reduced favorably, and electric performance index is increased while heat production is reduced.
Description
Technical field
The utility model relates to the power device technology field, is specifically related to a kind of quad flat type power device packaging body.
Background technology
Along with the development of electronic product, for example consumer electronics products such as notebook computer, mobile phone, mini CD, palmtop PC, CPU, digital camera more and more develop to miniaturization.For a short time do thinly along with doing of product, how the heat that millions of transistors among the worker IC produce distributes must not irrespective problem with regard to becoming one.In the prior art, though can reduce mode such as voltage and reduce caloric value by promoting worker IC processing procedure ability, still can not avoid the trend of heat generation density increase.Heat dissipation problem does not solve, and can make multiplexer spare because of the overheated reliability of products that has influence on, and seriously can shorten life of product even cause the product damage.
Prior art is a kind of generalized section of typical DFN encapsulating structure as shown in Figure 1, comprises chip 900, fin 920, lead frame 930, a plurality of lead 940, and the insulating cement 950 of parcel said structure.Chip 900 sticks on the fin 920, and lead frame 930 has the pin of a plurality of mutually insulateds, and the pad on chip 900 surfaces is connected lead frame 930 by lead 940.On the corresponding pin.Insulating cement 950 all wraps up said structure, and so that it is isolated with extraneous, only each pin and the fin 920 with lead frame 930 is exposed in the air with chip 900 facing surfaces.The pin that lead frame 930 comes out be used for to realize that packed chip 900 connects with extraneous electricity, and the heat that the effect that fin 920 comes out produces when being chip 900 work is dispersed into by the surface that exposes and goes in the environment; Still exist volume to be unfavorable for the technical problem of dispelling the heat greatly.
Summary of the invention
The utility model purpose provides a kind of quad flat type power device packaging body, and this power device packaging body is conducive to reduce ohmic contact resistance, has improved electrical performance indexes, also reduces the generation of heat simultaneously; And effectively avoided owing to connect anodal aluminium conductor band disconnected technological deficiency easily in use, thereby prolonged the useful life of product and improved reliability.
For achieving the above object, the technical solution adopted in the utility model is: a kind of quad flat type power device packaging body, comprise rectification chip, be coated on rectification chip epoxy resin layer all around, also comprise conduction basal disc, conductive welding disk, described conduction basal disc is made up of radiating area and basal disc pin area, this basal disc pin area is made up of several negative pole pins alternately, this negative pole pin one end is electrically connected with the radiating area end face, described radiating area under the rectification chip and with the rectification chip lower surface between be electrically connected by the soft soldering bed of material; Described conductive welding disk is positioned at the rectification chip opposite side, and conductive welding disk comprises weld zone and at least two pins, and the junction of weld zone and pin has a bending part, thereby makes the weld zone be higher than pin; One aluminium conductor band cross-over connection is between the weld zone of the positive pole of described rectification chip and conductive welding disk; The welding bar of described aluminium conductor band and rectification chip is at least 2 and alternately.
Further improved plan is as follows in the technique scheme:
1, in the such scheme, described conductive welding disk weld zone and rectification chip separately is positioned at same horizontal plane.
2, in the such scheme, the number of described negative pole pin is four.
3, in the such scheme, described aluminium conductor bandwidth thickness rate is 1:9 ~ 14.
Because technique scheme is used, the utility model compared with prior art has following advantage and effect:
1, the utility model quad flat type power device packaging body, cross-over connection has the aluminium conductor band between the positive pole of its rectification chip and the weld zone of conductive welding disk, and the welding bar of the positive pole of described aluminium conductor band and rectification chip is at least 2 and alternately, thereby this structural design is conducive to reduce ohmic contact resistance, improve electrical performance indexes, also reduced the generation of heat simultaneously.
2, the utility model quad flat type power device packaging body, it has had both conductive welding disk in the prior art, three component functions of fin and basic island simultaneously, the volume that both had been conducive to further reduction of device, also reduce the number of parts in the device, because radiating area and basal disc pin area are as a whole, improved the stability of electrical property simultaneously.
3, the junction of weld zone and pin area has a bending part in the utility model quad flat type power device packaging body, thereby make the weld zone be higher than pin area, and the positive pole that has guaranteed the weld zone of conductive welding disk and rectification chip is at same horizontal plane, thereby effectively avoided owing to connect anodal aluminium conductor band disconnected technological deficiency easily in use, thereby prolonged the useful life of product and improved reliability.
Description of drawings
Fig. 1 is the prior art structural representation;
Fig. 2 is the utility model quad flat type power device package body structure schematic diagram;
Fig. 3 is along the cutaway view of A-A line in the accompanying drawing 3.
In the above accompanying drawing: 1, rectification chip; 2, epoxy resin layer; 3, conduction basal disc; 31, radiating area; 32, basal disc pin area; 321, drain lead; 4, conductive welding disk; 5, aluminium conductor band; 6, the soft soldering bed of material; 7, weld zone; 8, pin area; 9, bending part; 10, welding bar.
Embodiment
Be further described below in conjunction with the utility model of embodiment:
Embodiment 1: a kind of quad flat type power device packaging body, comprise rectification chip 1, be coated on rectification chip 1 epoxy resin layer 2 all around, also comprise conduction basal disc 3, conductive welding disk 4, described conduction basal disc 3 is made up of radiating area 31 and basal disc pin area 32, this basal disc pin area 32 is made up of several negative pole pins 321 alternately, these negative pole pin 321 1 ends are electrically connected with radiating area 31 end faces, described radiating area 31 under the rectification chip 1 and with rectification chip 1 lower surface between be electrically connected by the soft soldering bed of material 6; Described conductive welding disk 4 is positioned at rectification chip 1 opposite side, and conductive welding disk 4 comprises weld zone 7 and at least two pins 8, and weld zone 7 has a bending part 9 with the junction of pin, thereby makes weld zone 7 be higher than pin 8; 5 cross-over connections of one aluminium conductor band are between the weld zone 7 of the positive pole of described rectification chip 1 and conductive welding disk 4; The welding bar 10 of described aluminium conductor band 5 and rectification chip 1 is at least 2 and alternately; The described soft soldering bed of material 6 is made up of the component of following quality percentage composition: lead 92.5%, tin 5%, silver 2.5%; Described aluminium conductor band 5 flakiness ratios are 1:10 ~ 15.
Above-mentioned conductive welding disk 4 weld zone 7 separately is positioned at same horizontal plane with rectification chip 1; Above-mentioned aluminium conductor band 5 flakiness ratios are 1:12.
Embodiment 2: a kind of quad flat type power device packaging body, comprise rectification chip 1, be coated on rectification chip 1 epoxy resin layer 2 all around, it is characterized in that: also comprise conduction basal disc 3, conductive welding disk 4, described conduction basal disc 3 is made up of radiating area 31 and basal disc pin area 32, this basal disc pin area 32 is made up of several negative pole pins 321 alternately, these negative pole pin 321 1 ends are electrically connected with radiating area 31 end faces, described radiating area 31 under the rectification chip 1 and with rectification chip 1 lower surface between be electrically connected by the soft soldering bed of material 6; Described conductive welding disk 4 is positioned at rectification chip 1 opposite side, and conductive welding disk 4 comprises weld zone 7 and at least two pins 8, and weld zone 7 has a bending part 9 with the junction of pin, thereby makes weld zone 7 be higher than pin 8; 5 cross-over connections of one aluminium conductor band are between the weld zone 7 of the positive pole of described rectification chip 1 and conductive welding disk 4; The welding bar 10 of described aluminium conductor band 5 and rectification chip 1 is at least 2 and alternately.
Above-mentioned conductive welding disk 4 weld zone 7 separately is positioned at same horizontal plane with rectification chip 1; The number of above-mentioned negative pole pin 321 is four; Above-mentioned aluminium conductor band 5 flakiness ratios are 1:10.
When adopting above-mentioned quad flat type power device packaging body, cross-over connection has the aluminium conductor band between the positive pole of its rectification chip and the weld zone of conductive welding disk, and the welding bar of the positive pole of described aluminium conductor band and rectification chip is at least 2 and alternately, thereby this structural design is conducive to reduce ohmic contact resistance, improve electrical performance indexes, also reduced the generation of heat simultaneously; Secondly, it has had both conductive welding disk in the prior art, three component functions of fin and basic island simultaneously, both has been conducive to the volume of further reduction of device, also reduces the number of parts in the device, because radiating area and basal disc pin area are as a whole, improved the stability of electrical property simultaneously; Again, the junction of weld zone and pin area has a bending part in the power rectification chip packing-body, thereby make the weld zone be higher than pin area, and the positive pole that has guaranteed the weld zone of conductive welding disk and rectification chip is at same horizontal plane, thereby effectively avoided owing to connect anodal aluminium conductor band disconnected technological deficiency easily in use, thereby prolonged the useful life of product and improved reliability.
Above-described embodiment only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model spirit essence change or modify, and all should be encompassed within the protection range of the present utility model.
Claims (4)
1. quad flat type power device packaging body, comprise rectification chip (1), be coated on rectification chip (1) epoxy resin layer (2) all around, it is characterized in that: also comprise conduction basal disc (3), conductive welding disk (4), described conduction basal disc (3) is made up of radiating area (31) and basal disc pin area (32), this basal disc pin area (32) is made up of several negative pole pins (321) alternately, these negative pole pin (321) one ends are electrically connected with radiating area (31) end face, described radiating area (31) be positioned under the rectification chip (1) and with rectification chip (1) lower surface between be electrically connected by the soft soldering bed of material (6); Described conductive welding disk (4) is positioned at rectification chip (1) opposite side, conductive welding disk (4) comprises weld zone (7) and at least two pins (8), weld zone (7) has a bending part (9) with the junction of pin, thereby makes weld zone (7) be higher than pin (8); One aluminium conductor band (5) cross-over connection is between the weld zone (7) of the positive pole of described rectification chip (1) and conductive welding disk (4); The welding bar (10) of described aluminium conductor band (5) and rectification chip (1) is at least 2 and alternately.
2. power device packaging body according to claim 1 is characterized in that: described conductive welding disk (4) weld zone (7) separately is positioned at same horizontal plane with rectification chip (1).
3. power device packaging body according to claim 1, it is characterized in that: the number of described negative pole pin (321) is four.
4. power device packaging body according to claim 1, it is characterized in that: described aluminium conductor band (5) flakiness ratio is 1:9 ~ 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201319195U CN203118939U (en) | 2013-03-22 | 2013-03-22 | Square flat type power device capsule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201319195U CN203118939U (en) | 2013-03-22 | 2013-03-22 | Square flat type power device capsule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203118939U true CN203118939U (en) | 2013-08-07 |
Family
ID=48899258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013201319195U Expired - Lifetime CN203118939U (en) | 2013-03-22 | 2013-03-22 | Square flat type power device capsule |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203118939U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024745A (en) * | 2016-07-01 | 2016-10-12 | 长电科技（宿迁）有限公司 | Pin mounting structure of semiconductor and welding method thereof |
-
2013
- 2013-03-22 CN CN2013201319195U patent/CN203118939U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024745A (en) * | 2016-07-01 | 2016-10-12 | 长电科技（宿迁）有限公司 | Pin mounting structure of semiconductor and welding method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130807 |