CN102280432A - Quad flat non-leaded (QFN) package frame structure - Google Patents
Quad flat non-leaded (QFN) package frame structure Download PDFInfo
- Publication number
- CN102280432A CN102280432A CN2011102255069A CN201110225506A CN102280432A CN 102280432 A CN102280432 A CN 102280432A CN 2011102255069 A CN2011102255069 A CN 2011102255069A CN 201110225506 A CN201110225506 A CN 201110225506A CN 102280432 A CN102280432 A CN 102280432A
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- CN
- China
- Prior art keywords
- frame structure
- qfn
- thermal land
- package frame
- rectangle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides a quad flat non-leaded (QFN) package frame structure. By the structure, the anti-interference performance of a heat conduction bonding pad is high, the performance of shielding high-frequency signals is high, and the yield of the integral products is improved. The QFN package frame structure comprises a plastic package body, wherein the plastic package body is in a rectangular shape; the heat conduction bonding pad is arranged on the middle part of the bottom surface of the plastic package body; and conducting bonding pads are arranged on the periphery of the heat conduction bonding pad. The QFN package frame structure is characterized in that the heat conduction bonding pad is in a circular shape; the conducting bonding pads are arranged on inner sides of four edges of the plastic package body; and the shape of each conducting bonding pad is a rectangle of which four corners are chamfered.
Description
Technical field
The present invention relates to the technical field of semiconductor packages, be specially the QFN package frame structure.
Background technology
QFN is a kind of no pin package, sees Fig. 1, and it is rectangular, and package bottom has the pad 1 with the bottom surface level, has an area exposed pads to be used for heat conduction in central authorities, is called thermal land 2; Around the peripheral conductive welding disk 3 that is electrically connected realized of the encapsulation of thermal land 2, thermal land 2, conductive welding disk 3 shapes are rectangle in the prior art, because the product great majority of QFN encapsulation all are to use the high frequency field, for example be applied to the mobile phone, wireless Internet access notebook computer, thing networking terminal equipment of 3G etc.There is following shortcoming in existing QFN lead frame:
(1) thermal land is that square or rectangle are unfavorable for shielding high-frequency signal, and its impurity signal easily lodges in four corners, so its anti-interference is poor;
Cause solder(ing) paste excessive easily when (2) welding, residue in four corners of thermal land, conductive welding disk, because whole component size is very little, the flash of four of thermal land corners easily causes causing thermal land and conductive plate short circuit in the course of processing, the flash of four of the adjacent conductive pad corners easily causes causing bridge joint in addition "; make short circuit between the conductive welding disk, reduced the qualification rate of product.
Summary of the invention
At the problems referred to above, the invention provides package frame structure into QFN, it makes that the anti-interference of thermal land is good, the shielding high-frequency signal is good, and has improved the qualification rate of entire product.
The QFN package frame structure, its technical scheme is such: it comprises plastic-sealed body, described plastic-sealed body is a rectangle, the middle part of the bottom surface of described plastic-sealed body is a thermal land, the periphery of described thermal land is placed with conductive welding disk, it is characterized in that: described thermal land is specially circular thermal land, and described conductive welding disk is arranged in the inboard, four limits of described plastic-sealed body, the rectangle that is shaped as four rounding of angle angles of described conductive welding disk.
It is further characterized in that: the chamfering radius of described conductive welding disk is not more than half of its rectangle bond length.
After adopting structure of the present invention, rectangle thermal land originally becomes present circular thermal land, and the area of guaranteeing present circular thermal land is not less than the area of original rectangle thermal land, guaranteed the heat radiation of chip, the transition of circular thermal land is an arc transition, make signal transmission, guarantee that the anti-interference of thermal land is good, the shielding high-frequency signal is good; In addition, because circular thermal land, the transition wire of conductive welding disk that is shaped as the rectangle at four rounding of angle angles are arc transition, solder(ing) paste can be not excessive when making welding, and then guarantee that thermal land can not cause thermal land and conductive plate short circuit, conductive welding disk can not cause the bridge joint between the adjacent conductive pad because of flash and cause short circuit because of flash, has improved the qualification rate of entire product.
Description of drawings
Fig. 1 is the front view structural representation of existing QFN package frame structure;
Fig. 2 is a front view structural representation block diagram of the present invention.
Embodiment
See Fig. 2, it comprises plastic-sealed body 1, plastic-sealed body 1 is a rectangle, the middle part of the bottom surface of plastic-sealed body 1 is circular thermal land 2, the periphery of circular thermal land 2 is placed with conductive welding disk 3, conductive welding disk 3 is arranged in the inboard, four limits of plastic-sealed body 1, the rectangle that is shaped as four rounding of angle angles of conductive welding disk 3, and the chamfering radius 4 of conductive welding disk 3 is not more than half of its rectangle bond length.
Claims (2)
1.QFN package frame structure, it comprises plastic-sealed body, described plastic-sealed body is a rectangle, the middle part of the bottom surface of described plastic-sealed body is a thermal land, the periphery of described thermal land is placed with conductive welding disk, it is characterized in that: described thermal land is specially circular thermal land, and described conductive welding disk is arranged in the inboard, four limits of described plastic-sealed body, the rectangle that is shaped as four rounding of angle angles of described conductive welding disk.
2. QFN package frame structure according to claim 1 is characterized in that: the chamfering radius of described conductive welding disk is not more than half of its rectangle bond length.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102255069A CN102280432A (en) | 2011-08-08 | 2011-08-08 | Quad flat non-leaded (QFN) package frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102255069A CN102280432A (en) | 2011-08-08 | 2011-08-08 | Quad flat non-leaded (QFN) package frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102280432A true CN102280432A (en) | 2011-12-14 |
Family
ID=45105777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102255069A Pending CN102280432A (en) | 2011-08-08 | 2011-08-08 | Quad flat non-leaded (QFN) package frame structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102280432A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681507A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Round QFN (Quad Flat No Lead) package structure |
| CN104681527A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | QFN (Quad Flat No-lead Package) package framework structure |
| CN104681508A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Circular flat no-lead encapsulation structure |
| CN104701290A (en) * | 2013-12-06 | 2015-06-10 | 上海北京大学微电子研究院 | QFN (quad flat no-lead) package structure for multiple circles of lead frames |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212950A (en) * | 1988-06-30 | 1990-01-17 | Toshiba Corp | Semiconductor device |
| US20050104168A1 (en) * | 2003-11-13 | 2005-05-19 | Choi Yoon-Hwa | Molded leadless package having improved reliability and high thermal transferability, and sawing type molded leadless package and method of manufacturing the same |
| CN202167480U (en) * | 2011-08-08 | 2012-03-14 | 无锡红光微电子有限公司 | QFN (quad flat nonleaded) packaging frame structure |
-
2011
- 2011-08-08 CN CN2011102255069A patent/CN102280432A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212950A (en) * | 1988-06-30 | 1990-01-17 | Toshiba Corp | Semiconductor device |
| US20050104168A1 (en) * | 2003-11-13 | 2005-05-19 | Choi Yoon-Hwa | Molded leadless package having improved reliability and high thermal transferability, and sawing type molded leadless package and method of manufacturing the same |
| CN202167480U (en) * | 2011-08-08 | 2012-03-14 | 无锡红光微电子有限公司 | QFN (quad flat nonleaded) packaging frame structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681507A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Round QFN (Quad Flat No Lead) package structure |
| CN104681527A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | QFN (Quad Flat No-lead Package) package framework structure |
| CN104681508A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Circular flat no-lead encapsulation structure |
| CN104701290A (en) * | 2013-12-06 | 2015-06-10 | 上海北京大学微电子研究院 | QFN (quad flat no-lead) package structure for multiple circles of lead frames |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111214 |