CN102842549A - Power metal-oxide-semiconductor field effect transistor (MOSFE) packaging body of square and flat shape and without pin - Google Patents

Power metal-oxide-semiconductor field effect transistor (MOSFE) packaging body of square and flat shape and without pin Download PDF

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Publication number
CN102842549A
CN102842549A CN2012103024028A CN201210302402A CN102842549A CN 102842549 A CN102842549 A CN 102842549A CN 2012103024028 A CN2012103024028 A CN 2012103024028A CN 201210302402 A CN201210302402 A CN 201210302402A CN 102842549 A CN102842549 A CN 102842549A
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China
Prior art keywords
pin
welding disk
conductive welding
packaging body
chip
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Granted
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CN2012103024028A
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CN102842549B (en
Inventor
胡乃仁
杨小平
李国发
钟利强
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Suzhou Good Ark Electronics Co Ltd
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Suzhou Good Ark Electronics Co Ltd
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

The invention discloses a power metal-oxide-semiconductor field effect transistor (MOSFE) packaging body of a square and flat shape and without a pin. The power MOSFE packaging body of the square and flat shape and without the pin is characterized in that an electric conduction base is composed of a heat dissipation area and a base pin area, wherein the base pin area is composed of a plurality of drain pins which are arranged at intervals, and the heat dissipation area is arranged directly below an MOSFE chip and in electric connection with the lower surface of the MOSFE chip through a soft solder layer. A first electric conduction pad and a second electric conduction pad are placed on the other side of the MOSFE chip and provided with solder zones and pin zones, and bend portions are arranged on connection portions of the solder zones and the pin zones. An aluminum conductor belt bridges between a source electrode of the MOSFE chip and the solder zone of the first electric conduction pad, and solder strips of the aluminum conductor belt and the source electrode of the MOSFE chip are at least two in number and arranged at intervals. Quality percentage content of the soft solder layer is lead 92.5%, tin 5% and silver 2.5%. The power MOSFE packaging body of the square and flat shape and without the pin is beneficial to reducing Ohmic contact resistance, improving electrical property index and reducing heat generation at the same time.

Description

The power MOSFET packaging body of square flat non-pin
Technical field
The present invention relates to MOSFET chip technology field, be specifically related to a kind of power MOSFET packaging body of square flat non-pin.
Background technology
Along with the fast development of electronic manufacturing technology, consumption electronic product is more and more to small-sized, portable trend development, and this space that has also caused the inside of these electronic products to can be used in the layout electricity component becomes more and more limited.In the case, the electricity component of employing certainly will be got over Bao Yuehao, and this also becomes present electronic component manufacturing development trend also.Square flat non-pin encapsulation (DFN) technology can satisfy this demand just.
Be the generalized section of a kind of typical DFN encapsulating structure in the prior art shown in the accompanying drawing 1, comprise chip 900, fin 920, lead frame 930, a plurality of lead 940, and the insulating cement 950 of parcel said structure.Chip 900 sticks on the fin 920, and lead frame 930 has the pin of a plurality of mutually insulateds, and the pad on chip 900 surfaces is connected lead frame 93 through lead 940.On the corresponding pin.Insulating cement 950 all wraps up said structure, and so that it is isolated with extraneous, only each pin with lead frame 930 is exposed in the air with fin 920 and chip 900 facing surfaces.The pin that lead frame 930 comes out is used to realize that packed chip 900 connects with extraneous electricity, and the heat that the effect that fin 920 comes out produces when being chip 900 work is dispersed in the environment through the surface that exposes and goes.
Summary of the invention
The object of the invention provides a kind of power MOSFET packaging body of square flat non-pin, and this power MOSFET packaging body helps reducing ohmic contact resistance, has improved electrical performance indexes, also reduces the generation of heat simultaneously.
For achieving the above object; The technical scheme that the present invention adopts is: a kind of power MOSFET packaging body of square flat non-pin, comprise MOSFET chip, epoxy resin layer, and said MOSFET chip upper surface is provided with source electrode and grid; Lower surface is provided with drain electrode; It is characterized in that: also comprise conduction basal disc, first conductive welding disk and second conductive welding disk, said conduction basal disc is made up of radiating area and basal disc pin area, and this basal disc pin area is made up of several drain lead alternately; This drain lead one end is electrically connected with the radiating area end face, said radiating area under the MOSFET chip and with MOSFET chip lower surface between be electrically connected through the soft soldering bed of material; Said first conductive welding disk and second conductive welding disk are positioned at MOSFET chip opposite side, and first conductive welding disk and second conductive welding disk include weld zone and pin area, and the junction of weld zone and pin area has a bending part, thereby makes the weld zone be higher than pin area; One aluminium conductor band cross-over connection is between the weld zone of the source electrode of said MOSFET chip and first conductive welding disk, and the welding bar of the source electrode of said aluminium conductor band and MOSFET chip is at least 2 and alternately; One metal wire cross-over connection is between the weld zone of the grid of said MOSFET chip and second conductive welding disk; The said soft soldering bed of material is made up of the component of following quality percentage composition: lead 92.5%, tin 5%, silver 2.5%.
Further improved plan is following in the technique scheme:
1, in the such scheme, said first conductive welding disk and second conductive welding disk weld zone and MOSFET chip separately is positioned at same horizontal plane.
2, in the such scheme, said aluminium conductor bandwidth thickness rate is 1:10 15.
3, in the such scheme, the arrangement mode of said at least 2 welding bars is for laterally arranging.
4, in the such scheme, the pin area of said first conductive welding disk is by at least four root utmost point pin set
Become.
5, in the such scheme, the pin area of said second conductive welding disk is made up of a gate lead.
6, in the such scheme, the number of said drain lead is four.
Because the technique scheme utilization, the present invention compared with prior art has advantage and effect:
1, conducts electricity basal disc in the packaging body of the present invention; It has had both conductive welding disk in the prior art, three component functions of fin and basic island simultaneously; The volume that had both helped further reduction of device; Also reduce the number of parts in the device, because radiating area and basal disc pin area are as a whole, improved the stability of electrical property simultaneously.
2, conduct electricity basal disc in the packaging body of the present invention; It has had both conductive welding disk in the prior art, three component functions of fin and basic island simultaneously; Said radiating area under the MOSFET chip and with MOSFET chip lower surface between be electrically connected and the said soft soldering bed of material is made up of the component of following quality percentage composition through the soft soldering bed of material: plumbous 92.5%; Tin 5%, silver 2.5% has further improved the heat dispersion of conduction basal disc.
3, the junction of weld zone and pin area has a bending part in the packaging body of the present invention; Thereby make the weld zone be higher than pin area; And the grid of weld zone and MOSFET chip that has guaranteed first, second conductive welding disk is at same horizontal plane; Thereby effectively avoided owing to the thin technological deficiency of in use breaking easily of second metal wire that connects grid, thereby prolonged the useful life of product and improved reliability.
4, this basal disc pin area of the present invention is made up of several drain lead alternately; The pin area of first conductive welding disk is made up of at least four root utmost point pins; Fully take into account the big difference of the MOSFET chip relative grid current of drain electrode with source electrode; Thereby help reducing the generation of heat, and further improved electrical performance indexes.
5, cross-over connection has the aluminium conductor band between the weld zone of the source electrode of MOSFET chip according to the invention and first conductive welding disk; And the welding bar of the source electrode of said aluminium conductor band and MOSFET chip is at least 2 and alternately; Thereby this structural design helps reducing ohmic contact resistance; Improve electrical performance indexes, also reduced the generation of heat simultaneously.
Description of drawings
Fig. 1 is the prior art structural representation;
Fig. 2 is a power MOSFET package body structure sketch map of the present invention;
Fig. 3 is along the cutaway view of A-A line in the accompanying drawing 2.
In the above accompanying drawing: 1, MOSFET chip; 2, epoxy resin layer; 3, conduction basal disc; 31, radiating area; 32, basal disc pin area; 321, drain lead; 4, first conductive welding disk; 5, second conductive welding disk; 6, the soft soldering bed of material; 7, weld zone; 8, pin area; 9, bending part; 10, aluminium conductor band; 11, metal wire; 12, welding bar.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment 1: a kind of power MOSFET packaging body of square flat non-pin; Comprise MOSFET chip 1, epoxy resin layer 2; Said MOSFET chip upper surface 1 is provided with source electrode and grid, and lower surface is provided with drain electrode, also comprises conduction basal disc 3, first conductive welding disk 4 and second conductive welding disk 5; Said conduction basal disc 3 is made up of radiating area 31 and basal disc pin area 32; This basal disc pin area 32 is made up of several drain lead 321 alternately, and these drain lead 321 1 ends are electrically connected with radiating area 31 end faces, said radiating area 31 under the MOSFET chip 1 and with MOSFET chip 1 lower surface between be electrically connected through the soft soldering bed of material 6; Said first conductive welding disk 4 and second conductive welding disk 5 are positioned at MOSFET chip 1 opposite side; First conductive welding disk 4 and second conductive welding disk 5 include weld zone 7 and pin area 8; Weld zone 7 has a bending part 9 with the junction of pin area 8, thereby makes weld zone 7 be higher than pin area 8; 10 cross-over connections of one aluminium conductor band are between the weld zone 7 of the source electrode of said MOSFET chip 1 and first conductive welding disk 4, and the welding bar 12 of said aluminium conductor band 10 and the source electrode of MOSFET chip 1 is at least 2 and alternately; 11 cross-over connections of one metal wire are between the weld zone 7 of the grid of said MOSFET chip 1 and second conductive welding disk 5; The said soft soldering bed of material 6 is made up of the component of following quality percentage composition: lead 92.5%, tin 5%, silver 2.5%.
Above-mentioned first conductive welding disk 4 and second conductive welding disk 5 weld zone 7 separately is positioned at same horizontal plane with the MOSFET chip.
The number of above-mentioned drain lead 321 is four.
Embodiment 2: a kind of power MOSFET packaging body of square flat non-pin; Comprise MOSFET chip 1, epoxy resin layer 2; Said MOSFET chip upper surface 1 is provided with source electrode and grid, and lower surface is provided with drain electrode, also comprises conduction basal disc 3, first conductive welding disk 4 and second conductive welding disk 5; Said conduction basal disc 3 is made up of radiating area 31 and basal disc pin area 32; This basal disc pin area 32 is made up of several drain lead 321 alternately, and these drain lead 321 1 ends are electrically connected with radiating area 31 end faces, said radiating area 31 under the MOSFET chip 1 and with MOSFET chip 1 lower surface between be electrically connected through the soft soldering bed of material 6; Said first conductive welding disk 4 and second conductive welding disk 5 are positioned at MOSFET chip 1 opposite side; First conductive welding disk 4 and second conductive welding disk 5 include weld zone 7 and pin area 8; Weld zone 7 has a bending part 9 with the junction of pin area 8, thereby makes weld zone 7 be higher than pin area 8; 10 cross-over connections of one aluminium conductor band are between the weld zone 7 of the source electrode of said MOSFET chip 1 and first conductive welding disk 4, and the welding bar 12 of said aluminium conductor band 10 and the source electrode of MOSFET chip 1 is at least 2 and alternately; 11 cross-over connections of one metal wire are between the weld zone 7 of the grid of said MOSFET chip 1 and second conductive welding disk 5; The said soft soldering bed of material 6 is made up of the component of following quality percentage composition: lead 92.5%, tin 5%, silver 2.5%.
Above-mentioned aluminium conductor band 10 flakiness ratios are 1:10 15.
The arrangement mode of above-mentioned at least 2 welding bars 12 is for laterally arranging.The pin area of above-mentioned first conductive welding disk 4 is made up of at least four root utmost point pins.
The pin area of above-mentioned second conductive welding disk 5 is made up of a gate lead.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to let the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.

Claims (7)

1. the power MOSFET packaging body of a square flat non-pin; Comprise MOSFET chip (1), epoxy resin layer (2); Said MOSFET chip upper surface (1) is provided with source electrode and grid; Lower surface is provided with drain electrode; It is characterized in that: also comprise conduction basal disc (3), first conductive welding disk (4) and second conductive welding disk (5), said conduction basal disc (3) is made up of radiating area (31) and basal disc pin area (32), and this basal disc pin area (32) is made up of several drain lead (321) alternately; These drain lead (321) one ends are electrically connected with radiating area (31) end face, said radiating area (31) be positioned under the MOSFET chip (1) and with MOSFET chip (1) lower surface between be electrically connected through the soft soldering bed of material (6); Said first conductive welding disk (4) and second conductive welding disk (5) are positioned at MOSFET chip (1) opposite side; First conductive welding disk (4) and second conductive welding disk (5) include weld zone (7) and pin area (8); Weld zone (7) has a bending part (9) with the junction of pin area (8), thereby makes weld zone (7) be higher than pin area (8); One aluminium conductor band (10) cross-over connection is between the weld zone (7) of the source electrode of said MOSFET chip (1) and first conductive welding disk (4), and the welding bar (12) of said aluminium conductor band (10) and the source electrode of MOSFET chip (1) is at least 2 and alternately; One metal wire (11) cross-over connection is between the weld zone (7) of the grid of said MOSFET chip (1) and second conductive welding disk (5); The said soft soldering bed of material (6) is made up of the component of following quality percentage composition: lead 92.5%, tin 5%, silver 2.5%.
2. power MOSFET packaging body according to claim 1 is characterized in that: said first conductive welding disk (4) and second conductive welding disk (5) weld zone (7) separately is positioned at same horizontal plane with the MOSFET chip.
3. power MOSFET packaging body according to claim 1 is characterized in that: said aluminium conductor band (10) flakiness ratio is 1:10 15.
4. power MOSFET packaging body according to claim 1 is characterized in that: the arrangement mode of said at least 2 welding bars (12) is for laterally arranging.
5. power MOSFET packaging body according to claim 1 is characterized in that: the pin area of said first conductive welding disk (4) is made up of at least four root utmost point pins.
6. power MOSFET packaging body according to claim 1 is characterized in that: the pin area of said second conductive welding disk (5) is made up of a gate lead.
7. power MOSFET packaging body according to claim 1 is characterized in that: the number of said drain lead (321) is four.
CN201210302402.8A 2012-08-23 2012-08-23 The power MOSFET package body of square flat non-pin Active CN102842549B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103208474A (en) * 2013-03-22 2013-07-17 苏州固锝电子股份有限公司 Quad flat type high-power chip packing structure
CN103219315A (en) * 2013-03-22 2013-07-24 苏州固锝电子股份有限公司 Schottky rectification chip packaging structure
CN106098565A (en) * 2016-07-04 2016-11-09 重庆平伟实业股份有限公司 The production method of two-side radiation band pin thin flat encapsulation power semiconductor
CN109121457A (en) * 2016-03-24 2019-01-01 三电汽车部件株式会社 Electronic-circuit device and inverter-integrated type electric compressor including the electronic-circuit device

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CN101512759A (en) * 2005-06-10 2009-08-19 万国半导体股份有限公司 Dfn semiconductor package having reduced electrical resistance
US20110272794A1 (en) * 2007-01-24 2011-11-10 Erwin Victor Cruz Pre-molded clip structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101512759A (en) * 2005-06-10 2009-08-19 万国半导体股份有限公司 Dfn semiconductor package having reduced electrical resistance
US20110272794A1 (en) * 2007-01-24 2011-11-10 Erwin Victor Cruz Pre-molded clip structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103208474A (en) * 2013-03-22 2013-07-17 苏州固锝电子股份有限公司 Quad flat type high-power chip packing structure
CN103219315A (en) * 2013-03-22 2013-07-24 苏州固锝电子股份有限公司 Schottky rectification chip packaging structure
CN109121457A (en) * 2016-03-24 2019-01-01 三电汽车部件株式会社 Electronic-circuit device and inverter-integrated type electric compressor including the electronic-circuit device
CN109121457B (en) * 2016-03-24 2020-09-22 三电汽车部件株式会社 Electronic circuit device and inverter-integrated electric compressor including the same
CN106098565A (en) * 2016-07-04 2016-11-09 重庆平伟实业股份有限公司 The production method of two-side radiation band pin thin flat encapsulation power semiconductor

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