CN104681527A - QFN (Quad Flat No-lead Package) package framework structure - Google Patents
QFN (Quad Flat No-lead Package) package framework structure Download PDFInfo
- Publication number
- CN104681527A CN104681527A CN201310638052.7A CN201310638052A CN104681527A CN 104681527 A CN104681527 A CN 104681527A CN 201310638052 A CN201310638052 A CN 201310638052A CN 104681527 A CN104681527 A CN 104681527A
- Authority
- CN
- China
- Prior art keywords
- package
- qfn
- quad flat
- framework structure
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003466 welding Methods 0.000 claims description 11
- 238000012797 qualification Methods 0.000 abstract description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention provides a QFN (Quad Flat No-lead Package) package framework structure. By adopting the QFN package framework structure, the interference resistance of a heat conduction bonding pad and the capacity for shielding a high-frequency signal can be improved; moreover, the qualification rate of a packaged product can be increased. The QFN package framework structure comprises a plastic package body, wherein the plastic package body is in a square shape, the heat conduction bonding pad is arranged in the middle part of the bottom surface, and a conducting bonding pad is distributed on the periphery of the heat conduction bonding pad. The QFN package framework structure is characterized in that the heat conduction bonding pad is in a circular shape, and the conducting bonding pad is in a circular shape.
Description
Technical field
The present invention relates to semiconductor device packaging technique field, be specially a kind of QFN (Quad Flat No-leadPackage, quad flat non-pin package) package frame structure.
Background technology
QFN (Quad Flat No-leadPackage, quad flat non-pin package) is a kind of non-leaded package, and see Fig. 1, it is rectangular, and the pad 2 that the central authorities of plastic-sealed body 1 have area exposed is used for heat conduction; Encapsulation periphery around thermal land 2 realizes the conductive welding disk 3 of electrical connection, and in prior art, thermal land 2 and conductive welding disk 3 are rectangle.There is following shortcoming in existing QFN (Quad Flat No-leadPackage, quad flat non-pin package) lead frame:
(1) thermal land be square or rectangle be unfavorable for shield high-frequency signal, interference signal easily accumulates in thermal land corner;
(2) the excessive of solder(ing) paste is easily caused during welding, tin cream can remain in the corner of thermal land, because the volume of packaging body is really very little, the flash of corner easily causes the short circuit of thermal land and conductive welding disk, the corner flash of adjacent conductive pads also can cause bridge joint, make short circuit between conductive welding disk, reduce the qualification rate of product.
Summary of the invention
For the problems referred to above, basis is practical provides a kind of QFN (Quad Flat No-leadPackage, quad flat non-pin package) package frame structure, can improve thermal land anti-interference and to high-frequency signal screening ability, and the qualification rate of encapsulating products can be improved.
This QFN (Quad Flat No-leadPackage, quad flat non-pin package) package frame structure, its technical scheme is: it comprises plastic-sealed body, plastic-sealed body is square, it is thermal land in the middle part of bottom surface, described thermal land periphery is placed with conductive welding disk, it is characterized in that: described thermal land is for circular, and the shape of described conductive welding disk is circular.
After adopting structure of the present invention, originally rectangle thermal land becomes present circular thermal land, and guarantees that circular thermal land area is not less than the area of original rectangular pads, and ensure that the heat radiation of chip, circular thermal land ensure that good anti-interference; When circular conductive welding disk makes welding, solder(ing) paste can not overflow, and then ensure that bridge joint between the adjacent conductive pads that can not cause because of flash, thus causes short circuit.
Accompanying drawing explanation
Fig. 1 is the structural representation front view of existing QFN (Quad Flat No-leadPackage, quad flat non-pin package) package frame structure;
Fig. 2 is the structural schematic block diagram front view of QFN of the present invention (Quad Flat No-leadPackage, quad flat non-pin package) package frame structure.
Embodiment
See Fig. 2, it comprises plastic body 1, and plastic body 1 is square, and be circular thermal land 2 in the middle part of the bottom surface of plastic body 1, the periphery of circular thermal land 2 is furnished with circular conductive pad 3.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (1)
1. a QFN (Quad Flat No-leadPackage, quad flat non-pin package) package frame structure, it comprises plastic-sealed body, plastic-sealed body is square, it is thermal land in the middle part of bottom surface, described thermal land periphery is placed with conductive welding disk, it is characterized in that: described thermal land is for circular, and the shape of described conductive welding disk is circular.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310638052.7A CN104681527A (en) | 2013-12-03 | 2013-12-03 | QFN (Quad Flat No-lead Package) package framework structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310638052.7A CN104681527A (en) | 2013-12-03 | 2013-12-03 | QFN (Quad Flat No-lead Package) package framework structure |
Publications (1)
Publication Number | Publication Date |
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CN104681527A true CN104681527A (en) | 2015-06-03 |
Family
ID=53316390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310638052.7A Pending CN104681527A (en) | 2013-12-03 | 2013-12-03 | QFN (Quad Flat No-lead Package) package framework structure |
Country Status (1)
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CN (1) | CN104681527A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106851971A (en) * | 2015-10-22 | 2017-06-13 | Zf腓德烈斯哈芬股份公司 | Circuit board and the device with circuit board |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0349001A2 (en) * | 1988-06-30 | 1990-01-03 | Kabushiki Kaisha Toshiba | Semiconductor device having a stress relief film protected against cracking |
US20050104168A1 (en) * | 2003-11-13 | 2005-05-19 | Choi Yoon-Hwa | Molded leadless package having improved reliability and high thermal transferability, and sawing type molded leadless package and method of manufacturing the same |
US6995460B1 (en) * | 1998-06-10 | 2006-02-07 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation |
CN101887870A (en) * | 2009-05-11 | 2010-11-17 | 联发科技股份有限公司 | Semiconductor chip packages and quad flat no-lead packages |
CN102280432A (en) * | 2011-08-08 | 2011-12-14 | 无锡红光微电子有限公司 | Quad flat non-leaded (QFN) package frame structure |
-
2013
- 2013-12-03 CN CN201310638052.7A patent/CN104681527A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0349001A2 (en) * | 1988-06-30 | 1990-01-03 | Kabushiki Kaisha Toshiba | Semiconductor device having a stress relief film protected against cracking |
US6995460B1 (en) * | 1998-06-10 | 2006-02-07 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation |
US20050104168A1 (en) * | 2003-11-13 | 2005-05-19 | Choi Yoon-Hwa | Molded leadless package having improved reliability and high thermal transferability, and sawing type molded leadless package and method of manufacturing the same |
CN101887870A (en) * | 2009-05-11 | 2010-11-17 | 联发科技股份有限公司 | Semiconductor chip packages and quad flat no-lead packages |
CN102280432A (en) * | 2011-08-08 | 2011-12-14 | 无锡红光微电子有限公司 | Quad flat non-leaded (QFN) package frame structure |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106851971A (en) * | 2015-10-22 | 2017-06-13 | Zf腓德烈斯哈芬股份公司 | Circuit board and the device with circuit board |
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Application publication date: 20150603 |