CN203118995U - Anti-pore diode device - Google Patents

Anti-pore diode device Download PDF

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Publication number
CN203118995U
CN203118995U CN2013200573019U CN201320057301U CN203118995U CN 203118995 U CN203118995 U CN 203118995U CN 2013200573019 U CN2013200573019 U CN 2013200573019U CN 201320057301 U CN201320057301 U CN 201320057301U CN 203118995 U CN203118995 U CN 203118995U
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CN
China
Prior art keywords
lead
wire bar
welding
welding ends
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2013200573019U
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Chinese (zh)
Inventor
张雄杰
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
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Suzhou Good Ark Electronics Co Ltd
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Publication date
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Priority to CN2013200573019U priority Critical patent/CN203118995U/en
Application granted granted Critical
Publication of CN203118995U publication Critical patent/CN203118995U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The utility model relates to an anti-pore diode device, comprising a first molded strip, a second molded strip, a connecting sheet and a diode chip which are wrapped in an epoxy packaging body. One end of the first molded strip is a support area connected with the diode chip; one end of the second molded strip is a welding area connected with a first welding end of the connecting sheet, the other end of the second molded strip is a pin area, and the pin area of the second molded strip acts as a current transmission end of a rectifier; a second welding end of the connecting sheet is electrically connected with the other end of the diode chip through soldering paste; a bending area is arranged between the first welding end and the second welding end of the connecting sheet, so that the first welding end is lower than the second welding end; and a plurality of through holes are arranged between the bending area and the second welding end. The anti-pore diode device in the utility model prevents the problem that pores are generated in packaging and injection molding, thereby improving electrical property and reliability of the product.

Description

Gas-tight pass diode component
Technical field
The present invention relates to a kind of diode component, relate in particular to a kind of gas-tight pass diode component.
Background technology
Rectifier is to utilize the unilateal conduction characteristic of diode that alternating current is carried out rectification, converts in the galvanic circuit so be widely used in alternating current.
Existing brace structural semiconductor product is usually to the brace infinite place or adopt simple groove structure spacing, its shortcoming be for doing the spacing of a direction to brace, and spacing purpose is to avoid in going into stove welding process brace off normal to cause tie point on the brace to deflect away from the chips welding district to cause product electrically to lose efficacy.When designs requires to do that more high accuracy is spacing to brace, existing structure can't reach requirement, and spacing purpose is to avoid in going into stove welding process brace off normal to cause tie point on the brace to deflect away from the chips welding district to cause product electrically to lose efficacy.
Therefore, how to research and develop a kind of gas-tight pass diode component, can address the above problem, just become the direction that those skilled in the art make great efforts.
Summary of the invention
The utility model purpose provides a kind of gas-tight pass diode component, and this gas-tight pass diode component has been avoided producing the problem of pore in the encapsulation injection moulding, thereby has improved the electrical and reliability of product.
For achieving the above object, the technical solution adopted in the utility model is: a kind of gas-tight pass diode component, comprise: be coated on the first lead-in wire bar in the epoxy packages body, second lead-in wire bar, brace and the diode chip for backlight unit, this first lead-in wire bar, one end is the Support that is connected with diode chip for backlight unit, described diode chip for backlight unit one end is electrically connected with this Support by solder(ing) paste, the first lead-in wire bar other end is pin area, and the pin area of this first lead-in wire bar is as the current delivery end of described rectifier;
The described second lead-in wire bar, one end is the weld zone that is connected with first welding ends of described brace, and this second lead-in wire bar other end is pin area, and the pin area of this second lead-in wire bar is as the current delivery end of described rectifier;
Described brace second welding ends is electrically connected by solder(ing) paste with the diode chip for backlight unit other end;
Be provided with bending part between first welding ends of described brace and second welding ends, thereby make the welding ends of winning be lower than second welding ends; Be provided with several through holes between described bending part and second welding ends.
Further improved plan is as follows in the technique scheme:
1. in the such scheme, the area of the weld zone of the described second lead-in wire bar is greater than the area of described first welding ends.
2. in the such scheme, described shape of through holes is circular.
3. in the such scheme, described number of openings is three.
Because technique scheme is used, the present invention compared with prior art has following advantage and effect:
The utility model gas-tight pass diode component is provided with bending part between first welding ends of its brace and second welding ends, thereby makes the welding ends of winning be lower than second welding ends; Be provided with several through holes between described bending part and second welding ends, avoided producing the problem of pore in the encapsulation injection moulding, thereby improved the electrical and reliability of product.
Description of drawings
Accompanying drawing 1 is the utility model gas-tight pass diode device structure schematic diagram;
Accompanying drawing 2 is A-A cross-sectional view in the accompanying drawing 1.
In the above accompanying drawing: 1, the first lead-in wire bar; 2, the second lead-in wire bar; 3, brace; 31, first welding ends; 32, second welding ends; 4, diode chip for backlight unit; 5, Support; 61, pin area; 62, pin area; 7, weld zone; 8, through hole; 9, bending part; 10, epoxy packages body.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment: a kind of gas-tight pass diode component, comprise: be coated on the first lead-in wire bar 1 in the epoxy packages body 10, second lead-in wire bar 2, brace 3 and the diode chip for backlight unit 4, these first lead-in wire bar, 1 one ends are the Support 5 that are connected with diode chip for backlight unit 4, described diode chip for backlight unit 4 one ends are electrically connected with this Support 5 by solder(ing) paste, the first lead-in wire bar, 1 other end is pin area 61, and the pin area 61 of this first lead-in wire bar 1 is as the current delivery end of described rectifier;
The described second lead-in wire bar, 2 one ends are the weld zones 7 that are connected with first welding ends 31 of described brace 3, and these second lead-in wire bar, 2 other ends are pin area 62, and the pin area 62 of this second lead-in wire bar 2 is as the current delivery end of described rectifier;
Described brace 3 second welding endss 32 are electrically connected by solder(ing) paste with diode chip for backlight unit 4 other ends;
Be provided with bending part 9 between first welding ends 31 of described brace 3 and second welding ends 32, thereby make the welding ends of winning be lower than second welding ends; Be provided with several through holes 8 between described bending part 9 and second welding ends 32.
The area of the weld zone 7 of the above-mentioned second lead-in wire bar 2 is greater than the area of described first welding ends 31.
Above-mentioned through hole 8 is shaped as circle; Above-mentioned through hole 8 quantity are three.
When adopting above-mentioned gas-tight pass diode component, be provided with bending part between first welding ends of its brace and second welding ends, thereby make the welding ends of winning be lower than second welding ends; Be provided with several through holes between described bending part and second welding ends, avoided producing the problem of pore in the encapsulation injection moulding, thereby improved the electrical and reliability of product.
Above-described embodiment only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model spirit essence change or modify, and all should be encompassed within the protection range of the present utility model.

Claims (4)

1. gas-tight pass diode component, comprise: be coated on the first lead-in wire bar (1) in the epoxy packages body (10), second lead-in wire bar (2), brace (3) and the diode chip for backlight unit (4), this first lead-in wire bar (1) one end is the Support (5) that is connected with diode chip for backlight unit (4), described diode chip for backlight unit (4) one ends are electrically connected with this Support (5) by solder(ing) paste, first lead-in wire bar (1) other end is pin area (61), and the pin area (61) of this first lead-in wire bar (1) is as the current delivery end of described rectifier;
The described second lead-in wire bar (2) one ends are the weld zones (7) that are connected with first welding ends (31) of described brace (3), this second lead-in wire bar (2) other end is pin area (62), and the pin area (62) of this second lead-in wire bar (2) is as the current delivery end of described rectifier;
Described brace (3) second welding endss (32) are electrically connected by solder(ing) paste with diode chip for backlight unit (4) other end; It is characterized in that:
Be provided with bending part (9) between first welding ends (31) of described brace (3) and second welding ends (32), thereby make the welding ends of winning be lower than second welding ends; Be provided with several through holes (8) between described bending part (9) and second welding ends (32).
2. gas-tight pass diode component according to claim 1 is characterized in that: the area of the weld zone (7) of the described second lead-in wire bar (2) is greater than the area of described first welding ends (31).
3. gas-tight pass diode component according to claim 1, it is characterized in that: described through hole (8) is shaped as circle.
4. gas-tight pass diode component according to claim 1, it is characterized in that: described through hole (8) quantity is three.
CN2013200573019U 2013-02-01 2013-02-01 Anti-pore diode device Expired - Lifetime CN203118995U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013200573019U CN203118995U (en) 2013-02-01 2013-02-01 Anti-pore diode device

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Application Number Priority Date Filing Date Title
CN2013200573019U CN203118995U (en) 2013-02-01 2013-02-01 Anti-pore diode device

Publications (1)

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CN203118995U true CN203118995U (en) 2013-08-07

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CN2013200573019U Expired - Lifetime CN203118995U (en) 2013-02-01 2013-02-01 Anti-pore diode device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617073A (en) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 Diode device for small signals
CN111584453A (en) * 2020-05-25 2020-08-25 苏州达晶微电子有限公司 High-reliability surface-mounted half-wave device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617073A (en) * 2015-01-19 2015-05-13 苏州固锝电子股份有限公司 Diode device for small signals
CN111584453A (en) * 2020-05-25 2020-08-25 苏州达晶微电子有限公司 High-reliability surface-mounted half-wave device
CN111584453B (en) * 2020-05-25 2023-04-28 苏州达晶微电子有限公司 High-reliability surface-mounted half-wave device

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Granted publication date: 20130807