CN203118996U - Diode structure having offset-proof function - Google Patents

Diode structure having offset-proof function Download PDF

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Publication number
CN203118996U
CN203118996U CN2013200573362U CN201320057336U CN203118996U CN 203118996 U CN203118996 U CN 203118996U CN 2013200573362 U CN2013200573362 U CN 2013200573362U CN 201320057336 U CN201320057336 U CN 201320057336U CN 203118996 U CN203118996 U CN 203118996U
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CN
China
Prior art keywords
lead
wire bar
area
welding
brace
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2013200573362U
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Chinese (zh)
Inventor
张雄杰
何洪运
程琳
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Suzhou Good Ark Electronics Co Ltd
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Suzhou Good Ark Electronics Co Ltd
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Priority to CN2013200573362U priority Critical patent/CN203118996U/en
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Publication of CN203118996U publication Critical patent/CN203118996U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The utility model relates to a diode structure having an offset-proof function. The diode structure comprises a first molded strip, a second molded strip, a connecting sheet and a diode chip, wherein one end of the first molded strip is a support area connected with the diode chip; a second welding end of the connecting sheet is electrically connected with the other end of the diode chip through soldering paste; an area between the support area and a pin area of the first molded strip is provided with a first bending position, so that the support area of the first molded strip is lower than the pin area; a welding area of the second molded strip is an arc-shaped groove whose inner surface is a cambered surface, and two sides of the arc-shaped groove are provided with baffle blocks; and a first welding end of the connecting sheet is a second bending position, and the second bending position is inserted in the arc-shaped groove. The diode structure having an offset-proof function prevents failure of the electric property of a product caused by offset of connecting points on the connecting sheet from a chip welding area due to offset of the connecting sheet in a welding process in a furnace, greatly improving the yield.

Description

Diode structure with preventing offsetting function
Technical field
The present invention relates to a kind of diode device structure, relate in particular to a kind of diode structure with preventing offsetting function.
Background technology
Rectifier is to utilize the unilateal conduction characteristic of diode that alternating current is carried out rectification, converts in the galvanic circuit so be widely used in alternating current.
Existing brace structural semiconductor product is usually to the brace infinite place or adopt simple groove structure spacing, its shortcoming be for doing the spacing of a direction to brace, and spacing purpose is to avoid in going into stove welding process brace off normal to cause tie point on the brace to deflect away from the chips welding district to cause product electrically to lose efficacy.When designs requires to do that more high accuracy is spacing to brace, existing structure can't reach requirement, and spacing purpose is to avoid in going into stove welding process brace off normal to cause tie point on the brace to deflect away from the chips welding district to cause product electrically to lose efficacy.
Therefore, how to research and develop a kind of diode structure with preventing offsetting function, can address the above problem, just become the direction that those skilled in the art make great efforts.
Summary of the invention
The utility model purpose provides a kind of diode structure with preventing offsetting function, in going into the stove welding process brace off normal of avoiding this diode structure causes the tie point on the brace to deflect away from the chips welding district to cause product electrically to lose efficacy, improved yield loss greatly; And the lifting of brace limit accuracy makes that the performance of chip is given full play to, and can substitute original large scale crystal grain with reduced size crystal grain, further reduces manufacturing cost.
For achieving the above object, the technical solution adopted in the utility model is: a kind of diode structure with preventing offsetting function, comprise: the first lead-in wire bar, second lead-in wire bar, brace and the diode chip for backlight unit, this first lead-in wire bar, one end is the Support that is connected with diode chip for backlight unit, described diode chip for backlight unit one end is electrically connected with this Support by solder(ing) paste, the first lead-in wire bar other end is pin area, and the pin area of this first lead-in wire bar is as the current delivery end of described rectifier;
The described second lead-in wire bar, one end is the weld zone that is connected with first welding ends of described brace, and this second lead-in wire bar other end is pin area, and the pin area of this second lead-in wire bar is as the current delivery end of described rectifier;
Described brace second welding ends is electrically connected by solder(ing) paste with the diode chip for backlight unit other end;
The zone is provided with one first bending part between the Support of the described first lead-in wire bar and the pin area, thereby makes the Support of the lead-in wire bar of winning be lower than pin area;
The weld zone of the described second lead-in wire bar is that inner surface is the arc groove of cambered surface, and these arc groove both sides are provided with block;
First welding ends of described brace is one second bending part, and this second bending part embeds in the described arc groove.
Further improved plan is as follows in the technique scheme:
1. in the such scheme, the area of the weld zone of the described second lead-in wire bar is greater than the area of described first welding ends.
2. in the such scheme, described second bending part and the second welding ends angle are the obtuse angle.
Because technique scheme is used, the present invention compared with prior art has following advantage and effect:
The utlity model has the diode structure of preventing offsetting function, it avoids in going into stove welding process brace off normal to cause tie point on the brace to deflect away from the chips welding district causing product electrically to lose efficacy, improved yield loss greatly; And the lifting of brace limit accuracy makes that the performance of chip is given full play to, and can substitute original large scale crystal grain with reduced size crystal grain, further reduces manufacturing cost; Secondly, the weld zone of its second lead-in wire bar is that inner surface is the arc groove of cambered surface, and these arc groove both sides are provided with block, is conducive to brace and second lead-in wire bar welding operation and the precision.
Description of drawings
Accompanying drawing 1 is for the utlity model has the diode structure schematic diagram of preventing offsetting function;
Accompanying drawing 2 is A-A profile in the accompanying drawing 1.
In the above accompanying drawing: 1, the first lead-in wire bar; 2, the second lead-in wire bar; 3, brace; 31, first welding ends; 32, second welding ends; 4, diode chip for backlight unit; 5, Support; 61, pin area; 62, pin area; 7, weld zone; 8, block; 9, first bending part; 10, arc groove; 101, cambered surface; 11, second bending part.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment: a kind of diode structure with preventing offsetting function, comprise: the first lead-in wire bar 1, second lead-in wire bar 2, brace 3 and the diode chip for backlight unit 4, these first lead-in wire bar, 1 one ends are the Support 5 that are connected with diode chip for backlight unit 4, described diode chip for backlight unit 4 one ends are electrically connected with this Support 5 by solder(ing) paste, the first lead-in wire bar, 1 other end is pin area 61, and the pin area 61 of this first lead-in wire bar 1 is as the current delivery end of described rectifier;
The described second lead-in wire bar, 2 one ends are the weld zones 7 that are connected with first welding ends 31 of described brace 3, and these second lead-in wire bar, 2 other ends are pin area 62, and the pin area 62 of this second lead-in wire bar 2 is as the current delivery end of described rectifier;
Described brace 3 second welding endss 32 are electrically connected by solder(ing) paste with diode chip for backlight unit 4 other ends;
The zone is provided with one first bending part 9 between the Support 5 of the described first lead-in wire bar 1 and the pin area 61, thereby makes the Support 5 of the lead-in wire bar 1 of winning be lower than pin area 61;
The weld zone 7 of the described second lead-in wire bar 2 is the arc groove 10 of cambered surface 101 for inner surface, and these arc groove 10 both sides are provided with block 8;
First welding ends 31 of described brace 3 is one second bending part 11, and this second bending part 11 embeds in the described arc groove 10.
The area of the weld zone 7 of the above-mentioned second lead-in wire bar 2 is greater than the area of described first welding ends 31.
Above-mentioned second bending part 11 and second welding ends, 32 angles are the obtuse angle.
When adopting above-mentioned diode structure with preventing offsetting function, it avoids in going into stove welding process brace off normal to cause tie point on the brace to deflect away from the chips welding district causing product electrically to lose efficacy, improved yield loss greatly; And the lifting of brace limit accuracy makes that the performance of chip is given full play to, and can substitute original large scale crystal grain with reduced size crystal grain, further reduces manufacturing cost.
Above-described embodiment only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model spirit essence change or modify, and all should be encompassed within the protection range of the present utility model.

Claims (3)

1. diode structure with preventing offsetting function, comprise: the first lead-in wire bar (1), second lead-in wire bar (2), brace (3) and the diode chip for backlight unit (4), this first lead-in wire bar (1) one end is the Support (5) that is connected with diode chip for backlight unit (4), described diode chip for backlight unit (4) one ends are electrically connected with this Support (5) by solder(ing) paste, first lead-in wire bar (1) other end is pin area (61), and the pin area (61) of this first lead-in wire bar (1) is as the current delivery end of described rectifier;
The described second lead-in wire bar (2) one ends are the weld zones (7) that are connected with first welding ends (31) of described brace (3), this second lead-in wire bar (2) other end is pin area (62), and the pin area (62) of this second lead-in wire bar (2) is as the current delivery end of described rectifier;
Described brace (3) second welding endss (32) are electrically connected by solder(ing) paste with diode chip for backlight unit (4) other end; It is characterized in that:
The zone is provided with one first bending part (9) between the Support (5) of the described first lead-in wire bar (1) and the pin area (61), thereby makes the Support (5) of the lead-in wire bar (1) of winning be lower than pin area (61);
The weld zone (7) of the described second lead-in wire bar (2) is the arc groove (10) of cambered surface (101) for inner surface, and this arc groove (10) both sides are provided with block (8);
First welding ends (31) of described brace (3) is one second bending part (11), and this second bending part (11) embeds in the described arc groove (10).
2. diode structure according to claim 1 is characterized in that: the area of the weld zone (7) of the described second lead-in wire bar (2) is greater than the area of described first welding ends (31).
3. diode structure according to claim 1 is characterized in that: described second bending part (11) is the obtuse angle with second welding ends (32) angle.
CN2013200573362U 2013-02-01 2013-02-01 Diode structure having offset-proof function Expired - Lifetime CN203118996U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013200573362U CN203118996U (en) 2013-02-01 2013-02-01 Diode structure having offset-proof function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013200573362U CN203118996U (en) 2013-02-01 2013-02-01 Diode structure having offset-proof function

Publications (1)

Publication Number Publication Date
CN203118996U true CN203118996U (en) 2013-08-07

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Country Status (1)

Country Link
CN (1) CN203118996U (en)

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Granted publication date: 20130807