CN202816914U - Dual-chip glass sealed diode - Google Patents
Dual-chip glass sealed diode Download PDFInfo
- Publication number
- CN202816914U CN202816914U CN2012205011244U CN201220501124U CN202816914U CN 202816914 U CN202816914 U CN 202816914U CN 2012205011244 U CN2012205011244 U CN 2012205011244U CN 201220501124 U CN201220501124 U CN 201220501124U CN 202816914 U CN202816914 U CN 202816914U
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- CN
- China
- Prior art keywords
- dumet wire
- chip
- glass bulb
- glass housing
- wire electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The utility model discloses a dual-chip glass sealed diode. The dual-chip glass sealed diode comprises: an upper glass housing and a lower glass housing which are arranged coaxially; an upper chip which is arranged in the upper glass housing; a lower chip which is located in the lower glass housing; an upper dumet wire electrode which is located inside the upper end of the upper glass housing; a lower dumet wire electrode which is located inside the lower end of the lower glass housing; and a dumet wire block which is located between the upper glass housing and the lower glass housing. The upper dumet wire electrode is welded with an upper electrode lead extending out from the upper glass housing, the lower dumet wire electrode is welded with a lower electrode lead extending out from the lower glass housing, the upper portion and the lower portion of the dumet wire block are inserted into the upper glass housing and the lower glass housing separately, and one part of the dumet wire block is located outside the upper glass housing and the lower glass housing, the upper chip is embedded between the dumet wire block and the upper dumet wire electrode, and the lower chip is embedded between the dumet wire block and the lower dumet wire electrode. The dual-chip glass sealed diode of the utility model has the advantage of low cost, and can be used to facilitate the optimization of the circuit board space.
Description
Technical field
The utility model relates to the manufacturing field of diode, is specifically related to a kind of dual chip glass sealed diode.
Background technology
The diode of traditional structure only has a chip, and inside, glass bulb two ends respectively plugs a Dumet wire electrode, and the chip that is embedded between the two Dumet wire electrodes is housed in the glass bulb, welding one electrical leads on each Dumet wire electrode.The diode of this traditional structure is unfavorable for optimizing wiring board bulk.
Summary of the invention
The utility model purpose is: in order to address the above problem, provide a kind of dual chip glass sealed diode of optimizing the wiring board space.
The technical solution of the utility model is: dual chip glass sealed diode of the present utility model comprises:
The upper glass bulb of coaxial arrangement and lower glass bulb,
Be arranged in the upper chip of glass bulb,
Be arranged in the lower chip of lower glass bulb,
Be positioned at the inner upper Dumet wire electrode in glass bulb upper end,
Be positioned at the lower Dumet wire electrode of inside, lower glass bulb lower end,
And the Dumet wire piece between upper and lower glass bulb;
Wherein, be welded with on the upper Dumet wire electrode and stretch out the outer top electrode lead-in wire of glass bulb, be welded with on the lower Dumet wire electrode and stretch out the outer bottom electrode lead-in wire of lower glass bulb, the upper and lower of Dumet wire piece is plugged in respectively in glass bulb and the lower glass bulb, and the part of Dumet wire piece is positioned at the outside of glass bulb and lower glass bulb, upper chip is embedded between Dumet wire piece and the upper Dumet wire electrode, and lower chip is embedded between Dumet wire piece and the lower Dumet wire electrode.
The utility model has the advantages that:
1, diode of the present utility model can with Dumet wire piece and top electrode lead-in wire access external circuitry, consist of a circuit and work alone in use; Also can with Dumet wire piece and bottom electrode lead-in wire access external circuitry, consist of another circuit and work alone.A diode of this structure has just possessed the function of two conventional diode, is convenient to optimize the wiring board space.
2, the utility model diode is when making, and two glass bulb while high-temperature soldering can make four solder joints be reduced to three up and down, save welding cost, simultaneously less energy waste.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further described:
Fig. 1 is the structural representation of the utility model embodiment;
Wherein: the upper glass bulb of 1-, glass bulb under the 2-, the upper chip of 3-, chip under the 4-, the upper Dumet wire electrode of 5-, Dumet wire electrode under the 6-, 7-Dumet wire piece, 8-top electrode lead-in wire, 9-bottom electrode lead-in wire.
Embodiment
As shown in Figure 1, the diode of present embodiment comprises:
The upper glass bulb 1 of coaxial arrangement and lower glass bulb 2,
Be arranged in the upper chip 3 of glass bulb 1,
Be arranged in the lower chip 4 of lower glass bulb 2,
Be positioned at the upper Dumet wire electrode 5 of inside, glass bulb 1 upper end,
Be positioned at the lower Dumet wire electrode 6 of inside, lower glass bulb 2 lower end,
And the Dumet wire piece 3 between upper and lower glass bulb 1,2;
Wherein, be welded with the top electrode lead-in wire 8 that stretches out outside the glass bulb 1 on the upper Dumet wire electrode 5, be welded with the bottom electrodes lead-in wire 9 that stretches out outside the lower glass bulb 2 on the lower Dumet wire electrode 6, the upper and lower of Dumet wire piece 7 is plugged in respectively in glass bulb 1 and the lower glass bulb 2, and the part of Dumet wire piece 7 is positioned at the outside of glass bulb and lower glass bulb, upper chip 3 is embedded between Dumet wire piece 7 and the upper Dumet wire electrode 5, and lower chip 4 is embedded between Dumet wire piece 7 and the lower Dumet wire electrode 6.
The diode of present embodiment can with Dumet wire piece 7 and top electrode lead-in wire 8 access external circuitry, consist of a circuit and work alone in use; Also can with Dumet wire piece 7 and bottom electrode lead-in wire 9 access external circuitry, consist of another circuit and work alone simultaneously.A diode of this structure has just possessed the function of two conventional diode, is convenient to optimize the wiring board space.
Certainly, above-described embodiment only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow people can understand content of the present utility model and implements according to this, can not limit protection range of the present utility model with this.All equivalent transformation or modifications of doing according to the Spirit Essence of the utility model main technical schemes all should be encompassed within the protection range of the present utility model.
Claims (1)
1. dual chip glass sealed diode is characterized in that it comprises:
The upper glass bulb (1) of coaxial arrangement and lower glass bulb (2),
Be arranged in the upper chip (3) of glass bulb (1),
Be arranged in the lower chip (4) of lower glass bulb (2),
Be positioned at the inner upper Dumet wire electrode (5) in glass bulb (1) upper end,
Be positioned at the lower Dumet wire electrode (6) of lower glass bulb (2) inside, lower end,
And be positioned at Dumet wire piece (7) between the upper and lower glass bulb (1,2);
Wherein, be welded with on the upper Dumet wire electrode (5) and stretch out the outer top electrode lead-in wire (8) of glass bulb (1), be welded with on the lower Dumet wire electrode (6) and stretch out the outer bottom electrode lead-in wire (9) of lower glass bulb (2), the upper and lower of Dumet wire piece (7) is plugged in respectively in glass bulb (1) and the lower glass bulb (2), and the part of Dumet wire piece (7) is positioned at the outside of glass bulb and lower glass bulb, upper chip (3) is embedded between Dumet wire piece (7) and the upper Dumet wire electrode (5), and lower chip (4) is embedded between Dumet wire piece (7) and the lower Dumet wire electrode (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205011244U CN202816914U (en) | 2012-09-28 | 2012-09-28 | Dual-chip glass sealed diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205011244U CN202816914U (en) | 2012-09-28 | 2012-09-28 | Dual-chip glass sealed diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202816914U true CN202816914U (en) | 2013-03-20 |
Family
ID=47875754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012205011244U Expired - Lifetime CN202816914U (en) | 2012-09-28 | 2012-09-28 | Dual-chip glass sealed diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202816914U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881683A (en) * | 2012-09-28 | 2013-01-16 | 苏州群鑫电子有限公司 | Double-chip glass-sealed diode |
-
2012
- 2012-09-28 CN CN2012205011244U patent/CN202816914U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881683A (en) * | 2012-09-28 | 2013-01-16 | 苏州群鑫电子有限公司 | Double-chip glass-sealed diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SIYANG QUNXIN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SUZHOU QUNXIN ELECTRON CO., LTD. Effective date: 20150427 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215129 SUZHOU, JIANGSU PROVINCE TO: 223700 SUQIAN, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150427 Address after: 223700, Suqian City, Jiangsu province Siyang County Road, Tai Yuen Road north side of your mouth Road West National Pioneer Park Patentee after: SIYANG GRANDE ELECTRONICS Co.,Ltd. Address before: 215129 No. 568 Changjiang Road, hi tech Development Zone, Jiangsu, Suzhou Patentee before: SUZHOU QUNXIN ELECTRONICS Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20130320 |
|
| CX01 | Expiry of patent term |