CN202196774U - Plastic packaged power diode with welded metal pad - Google Patents
Plastic packaged power diode with welded metal pad Download PDFInfo
- Publication number
- CN202196774U CN202196774U CN2011202776682U CN201120277668U CN202196774U CN 202196774 U CN202196774 U CN 202196774U CN 2011202776682 U CN2011202776682 U CN 2011202776682U CN 201120277668 U CN201120277668 U CN 201120277668U CN 202196774 U CN202196774 U CN 202196774U
- Authority
- CN
- China
- Prior art keywords
- pad
- power diode
- lead
- diode
- ferroalloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
The utility model discloses a plastic packaged power diode with a welded metal pad, which relates to the field of a semiconductor opto-coupler technology. The plastic packaged power diode with a welded metal pad comprises a copper lead with a Chinese character Gan shaped head, a lead, tin and silver welded tab, a ferroalloy pad, a silicon chip and a non-cavity plastic-sealed body. The ferroalloy pad is welded on the copper lead with a Chinese character Gan shaped head, and the lead with the metal pads are connected with the silicon chip to lead out the anode and the cathode of a diode. In the utility model, the plastic packaged power diode with a welded metal pad is advantageous in that the thermal-shock-resistant performance is good, the high temperature characteristic is good, the reliability is high, the technology is simple and easy to realize, and the large scale production is suitable.
Description
Technical field
The utility model relates to semiconductor deviding device technical field, especially relates to a kind of plastic packaging power diode.
Background technology
At present, be widely used in the plastic packaging power diode in TV, computer, electricity-saving lamp, the electronic instruments circuit, its packing forms can be divided into: epoxy resin plastics encapsulation, glass packaging, metallic packaging, ceramic packaging etc.The power diode of epoxy resin plastics encapsulation is easy to large-scale production, and is with low cost, is the main flow that encapsulates diode now.
The manufacturing approach of plastic packaging power diode has multiple, and the power diode of high backward voltage resistance mostly adopts the manufacturing of mesa process.Main adopt glassivation (GPP) silicon and through the silicon of acid corrosion; Can carry out the injection moulding encapsulation behind the former the silicon welding lead, and the latter is with behind the chips welding lead, passes through the cleaning of acid corrosion and high purity water again; After the protection of silicon rubber, could the injection moulding encapsulation.
After traditional plastic packaging power diode adopts copper conductor, slicker solder silver soldering sheet, silicon welding; The encapsulation of enforcement epoxy resin plastics; Because the difference of the thermal coefficient of expansion of copper conductor, slicker solder silver soldering sheet, silicon and plastic-sealed body, when high temperature, it is very big to be applied on the silicon thermal stress; Cause the reverse leakage current of diode to increase even early failure, the hot properties of diode degenerates.
The utility model content
The purpose of the utility model is the deficiency that overcomes prior art, and a kind of plastic packaging power diode with the metallic gasket welding is provided.
The utility model is made up of dried prefix copper conductor, slicker solder silver soldering sheet, ferroalloy pad, silicon and non-cavity plastic-sealed body, welding ferroalloy pad on the dried prefix copper conductor, and the lead of band metallic gasket connects the both positive and negative polarity that silicon is drawn diode.
The shape of said ferroalloy pad is preferably round shape, its diameter and dried prefix lead upper table surface equal diameters.
The length of said dried prefix copper conductor is shorter than existing copper conductor, and the profile of diode is preferably non-cavity plastic-sealed body.
The base material of diode chip for backlight unit is a semiconductor silicon, and its characteristics are more crisp, and thermal coefficient of expansion is little; When the time spent of doing that silicon receives thermal stress and mechanical external force, cause micro-crack easily, particularly under the environment of high temperature; Material coefficient of thermal expansion such as copper conductor, plastic-sealed body coefficient is bigger; The thermal stress that is applied on the silicon is very big, causes diode early failure easily, and reliability reduces.
The utility model has the advantages that the circular copper facing or the ferro-nickel alloy pad that adopt welding cold stamping shaped; Thermal stress acts on two metallic gaskets and the silicon; Metallic gasket has been shared the effect of thermal stress, has alleviated the impact of thermal stress to silicon greatly, and the hot properties of diode is good; And dried font copper conductor material has also shortened than conventional diode, has saved copper material.
The disclosed plastic package diode of the utility model, its thermal stress impact by force, hot properties is good, reliability is high, large-scale production simple for process, suitable.
Description of drawings
Fig. 1 is the structural representation of band metallic gasket lead;
Fig. 2 is the internal structure sketch map of the plastic packaging power diode of the utility model band metallic gasket welding;
Fig. 3 is the contour structures sketch map of the plastic packaging power diode of band metallic gasket welding shown in Figure 2.
Embodiment
Below in conjunction with accompanying drawing the utility model is elaborated:
Among the figure: 1, dried prefix copper conductor, 2, weld tabs, 3, the ferroalloy pad, 4, the weld tabs of welding silicon, 5, silicon, 6, non-cavity plastic packaging cylinder, 7, the colour circle sign.
It is made up of dried prefix copper conductor, slicker solder silver soldering sheet, ferroalloy pad, silicon and non-cavity plastic-sealed body, welding ferroalloy pad on the dried prefix copper conductor, and the lead of band metallic gasket connects the both positive and negative polarity that silicon is drawn diode.The ferroalloy pad be shaped as round shape, its diameter and dried prefix lead upper table surface equal diameters; The length of dried prefix copper conductor shortens than existing copper conductor, and the profile of diode is non-cavity plastic-sealed body.
Claims (2)
1. plastic packaging power diode with metallic gasket welding; It is characterized in that: it is made up of dried prefix copper conductor, slicker solder silver soldering sheet, ferroalloy pad, silicon and non-cavity plastic-sealed body; Welding ferroalloy pad on the dried prefix copper conductor, the lead of band metallic gasket connects the both positive and negative polarity that silicon is drawn diode.
2. the plastic packaging power diode of band metallic gasket according to claim 1 welding is characterized in that: said ferroalloy pad be shaped as round shape, its diameter and dried prefix lead upper table surface equal diameters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202776682U CN202196774U (en) | 2011-08-02 | 2011-08-02 | Plastic packaged power diode with welded metal pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202776682U CN202196774U (en) | 2011-08-02 | 2011-08-02 | Plastic packaged power diode with welded metal pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202196774U true CN202196774U (en) | 2012-04-18 |
Family
ID=45951673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202776682U Expired - Fee Related CN202196774U (en) | 2011-08-02 | 2011-08-02 | Plastic packaged power diode with welded metal pad |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202196774U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405817A (en) * | 2015-12-30 | 2016-03-16 | 朝阳无线电元件有限责任公司 | Ceramic sealing axial diode design and manufacturing technology |
| CN110060933A (en) * | 2018-01-19 | 2019-07-26 | 浙江美晶科技股份有限公司 | A kind of semiconductor devices |
-
2011
- 2011-08-02 CN CN2011202776682U patent/CN202196774U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405817A (en) * | 2015-12-30 | 2016-03-16 | 朝阳无线电元件有限责任公司 | Ceramic sealing axial diode design and manufacturing technology |
| CN105405817B (en) * | 2015-12-30 | 2018-05-25 | 朝阳无线电元件有限责任公司 | A kind of manufacturing method for envelope axial diode of making pottery |
| CN110060933A (en) * | 2018-01-19 | 2019-07-26 | 浙江美晶科技股份有限公司 | A kind of semiconductor devices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120418 Termination date: 20150802 |
|
| EXPY | Termination of patent right or utility model |