CN201549530U - Side-mounted electrode LED chip device - Google Patents
Side-mounted electrode LED chip device Download PDFInfo
- Publication number
- CN201549530U CN201549530U CN2009202049055U CN200920204905U CN201549530U CN 201549530 U CN201549530 U CN 201549530U CN 2009202049055 U CN2009202049055 U CN 2009202049055U CN 200920204905 U CN200920204905 U CN 200920204905U CN 201549530 U CN201549530 U CN 201549530U
- Authority
- CN
- China
- Prior art keywords
- led chip
- gold thread
- electrode
- pcb
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- Led Device Packages (AREA)
Abstract
The utility model discloses a side-mounted electrode LED chip device, which comprises a PCB, an LED chip arranged on the PCB, and a gold thread, wherein the connection between one end of the gold thread and the electrode of the LED chip is spherical welding, and the connection of the other end of the gold thread with the circuit of the PCB is ultrasonic pressure welding, while the electrode is arranged at the edge of the LED chip. In the utility model, the electrode is arranged at the edge of the LED chip, one end of the gold thread can be welded at the side edge of the LED chip, as the gold thread is far away from the edge of the LED chip, the connection of the other end of the gold thread and the PCB can not generate short circuit, therefore, the radian of the gold thread can be gentle, thus reducing the total thickness of the LED chip device; and both the welding reliability and the yield rate after welding are not influenced. The side-mounted electrode LED chip device has simple manufacture and superior comprehensive performance.
Description
Technical field
The utility model relates to semiconductor device, relates in particular to a kind of backlight as electronic equipment, the led chip device of illumination.
Background technology
Along with the development that science and technology learns a skill, semi-conducting material has obtained using widely.LED paster device as backlight is little with its volume, power consumption is low, pollution-free advantage is widely used in the electronic equipment.Be the miniaturization that adapts to electronic product, microminiaturized requirement, as the LED paster device of electronic equipment basis device, the size of its volume directly influences the volume of miniaturization and microminiaturized product, so industry is making great efforts to reduce the thickness of LED paster device always.Common way is the thickness that reduces led chip and PCB, but reduce thickness the limit is arranged, infinitely attenuate.As shown in Figure 1, LED paster device normally places led chip 1 on the PCB2, is connected with the circuit of PCB by the electrode 7 of a gold thread 3 with led chip.Gold thread and electrode be connected to once welding-employing gold goal 6 welding, with guarantee welding firmly, gold thread and PCB circuit be connected to secondary welding-employing ultrasonic wire bonding, efficient height.After the welding again sealing finish making.At present, industry adopts a kind of frame mode of inverse bonding to reduce the thickness of led chip device, as shown in Figure 2, change gold thread into ultrasonic wire bonding with the once welding that is connected of electrode, the secondary welding that gold thread is connected with the PCB circuit changes gold goal 4 welding into, so, the direct and electrode crimping of an end of gold thread, the gross thickness of led chip has reduced the height of a nearly solder sphere.But gold thread is unreliable with being connected of electrode, is prone to situations such as loose contact even open circuit, (for example pushing the LED encapsulation top that does not originally work with hand can make it light).So this mode is unfavorable, industry is also striving to find reliable convenient mode.
Summary of the invention
The utility model is in order to solve gold thread and insecure problem of being connected of electrode in the prior art, proposes a kind of led chip device that connects the side setting type electrode of firm, easy making process.
For addressing the above problem, the led chip device of the side setting type electrode that the utility model proposes, comprise PCB, place led chip and gold thread on this PCB, an end of this gold thread and the electrode of led chip be connected to spheroid welding, the other end of gold thread and PCB circuit be connected to ultrasonic wire bonding.And electrode is located at the edge of led chip.
More excellent, described electrode and spheroid are golden material.
The utility model is located at the edge of led chip with electrode, and an end of gold thread can be welded in the side of led chip, and the other end just can PCB be downwards gone up directly and be gone between.Because electrode is located at the middle part of led chip in traditional structure, when PCB went up lead-in wire, bending that must gold thread is high produced short circuit phenomenon to gold thread in order to avoid gold thread contacts with the led chip edge by electrode.But gold thread of the present utility model and led chip edge distance is far away, does not worry the gold thread short circuit, so the curvature of gold thread can be reduced, makes the mild point of gold thread radian, thereby has reduced the gross thickness of led chip device.Yields after soldering reliability and the welding does not all have influence.The utility model is made simple, and combination property is superior.
Description of drawings
Below in conjunction with drawings and Examples the utility model is done detailed explanation, wherein:
Fig. 1 is the schematic diagram in existing LED paster device cross section;
Fig. 2 is the schematic cross-section of the LED paster device of existing inverse bonding gold goal structure;
Fig. 3 is the schematic cross-section of the utility model preferred embodiment.
Embodiment
As shown in Figure 1, present traditional led chip device, wherein the minimum thickness of the PCB2 minimum thickness that is about 0.18mm, led chip 1 is about 0.14mm, and the height that is used for welding gold ball 6 is about 0.04mm, the height of the above gold thread radian of gold goal is about 0.06mm, and total thickness is just greater than 0.4mm.
As shown in Figure 2, the led chip device of inverse bonding structure, wherein the minimum thickness of the PCB2 minimum thickness that is about 0.18mm, led chip 1 is about 0.14mm, and the height of led chip 1 above gold thread radian is about 0.06mm, and total thickness is just less than 0.4mm.
See also Fig. 3, preferred embodiment of the present utility model, a kind of led chip device of heavier-duty inverse bonding sphere structure, it comprises PCB 2, places led chip 1 and gold thread 3 on this PCB.The left end of this gold thread and led chip 1 golden electrode 7 adopts gold goals 8 welding, and the right-hand member of gold thread is connected with PCB circuit employing ultrasonic wire bonding.And electrode 7 is located at the right hand edge of led chip 1.As required, electrode 7 and gold goal 8 can be used other materials instead.Wherein the minimum thickness of the PCB2 minimum thickness that is about 0.18mm, led chip 1 is about 0.14mm, and the height of led chip 1 above gold thread radian is about 0.07mm, and total thickness is just less than 0.4mm, and encapsulation back gross thickness is that 0.04mm can be achieved.
The utility model is located at electrode at the edge of led chip, one end of gold thread can be welded in the side of led chip, because gold thread and led chip edge distance are far away, the other end of gold thread just can be gone up directly lead-in wire by PCB downwards, do not worry the gold thread short circuit, so can be so that the mild point of gold thread radian, thereby have reduced the gross thickness of led chip device.Yields after soldering reliability and the welding does not all have influence.The utility model is made simple, and combination property is superior.
Claims (2)
1. the led chip device of a side setting type electrode, comprise PCB (2), place led chip (1) and gold thread (3) on this PCB, the spheroid (8) that is connected to of one end of this gold thread and led chip (1) electrode (7) welds, the other end of gold thread and PCB circuit be connected to ultrasonic wire bonding, it is characterized in that: described electrode (7) is located at the edge of led chip (1).
2. the led chip device of side setting type electrode as claimed in claim 1 is characterized in that: described electrode (7) and spheroid (8) are by golden material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202049055U CN201549530U (en) | 2009-09-18 | 2009-09-18 | Side-mounted electrode LED chip device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202049055U CN201549530U (en) | 2009-09-18 | 2009-09-18 | Side-mounted electrode LED chip device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201549530U true CN201549530U (en) | 2010-08-11 |
Family
ID=42604709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202049055U Expired - Lifetime CN201549530U (en) | 2009-09-18 | 2009-09-18 | Side-mounted electrode LED chip device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201549530U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113192854A (en) * | 2021-06-07 | 2021-07-30 | 季华实验室 | Board-level fan-out type MOSFET device with low packaging thickness and manufacturing method thereof |
-
2009
- 2009-09-18 CN CN2009202049055U patent/CN201549530U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113192854A (en) * | 2021-06-07 | 2021-07-30 | 季华实验室 | Board-level fan-out type MOSFET device with low packaging thickness and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100811 |