CN214123860U - High-power diode packaging structure - Google Patents
High-power diode packaging structure Download PDFInfo
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- CN214123860U CN214123860U CN202120167895.3U CN202120167895U CN214123860U CN 214123860 U CN214123860 U CN 214123860U CN 202120167895 U CN202120167895 U CN 202120167895U CN 214123860 U CN214123860 U CN 214123860U
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Abstract
The utility model discloses a high-power diode packaging structure, including tube socket, chip, first positive pole gasket and second positive pole gasket, install first positive pole gasket on the tube socket, install the chip on the first positive pole gasket, install second positive pole gasket on the chip, install the tube socket on the second positive pole gasket. The utility model discloses compare traditional high-power boss installation device, this structure has the installation small, product during operation pressure drop ratio is lower, device itself calorific capacity is low, anti surge ability is strong, the device thermal resistance is little, characteristics such as resistant ambient temperature height, because device itself pressure drop ratio is lower, the device consumes the consumption small, help improving the output efficiency of complete machine power, this structure can improve the yield of like product, and therefore, the cost is reduced, realize that the device complete machine adds the electric in-process for a long time, the pressure drop is little, calorific capacity is low, at high temperature, under the long-term adverse circumstances of low temperature, the pressure drop does not change.
Description
Technical Field
The utility model relates to a high-power rectifier diode device production technical field specifically is a high-power diode packaging structure.
Background
The rectifier diode is widely applied to equipment such as a rectifier power supply, a switching power supply, an inverter power supply, a soft start and a high-power electric welding machine.
The high-power rectifier diode is packaged by adopting metal ceramics, and has the characteristics of small contact resistance, low voltage, large peak current, small thermal resistance and the like;
the high-power rectifier diode consists of an anode shell, a cathode gasket and an anode gasket high-power rectifier diode core. The high-power rectifier diode chip and the shell are electrically connected in a crimping mode. The anode shell and the cathode shell are packaged and welded by using a plasma process, but the existing high-power diode packaging structure has many problems or defects:
the existing packaging has large contact resistance and heavy volume, and the chip is directly contacted with a shell without buffering because the two sides of the chip use aluminum gaskets or do not pad the gaskets, so that the contact resistance ratio is large, and the voltage drop of a device is increased;
meanwhile, the contact voltage drop of the existing device is obviously increased under the severe environment (after high-temperature storage), the chip is burnt due to high thermal resistance of the device when the device is used, the whole power supply cannot be normally used, and the reliability is very low.
Disclosure of Invention
An object of the utility model is to provide a high-power diode packaging structure to solve the big reliability problem such as of the high temperature back device pressure drop that proposes in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a high-power diode packaging structure, includes tube socket, chip, first positive pole gasket and second positive pole gasket, install first positive pole gasket on the tube socket, install the chip on the first positive pole gasket, install second positive pole gasket on the chip, install the tube socket on the second positive pole gasket.
Preferably, the tube seat and the outer edge of the tube seat are welded and fixed through a plasma welding technology.
Preferably, the butt joint is installed at the central position inside the pipe seat.
Preferably, the pipe seat is internally provided with a butt joint sleeve, and the top of the butt joint sleeve is provided with a mounting pad.
Compared with the prior art, the beneficial effects of the utility model are that: the high-power diode packaging structure has the advantages of reasonable overall structure and the following advantages:
(1) compared with the traditional high-power boss mounting device, the structure has the characteristics of small mounting volume, low pressure drop during the work of a product, low heat productivity of the device, strong anti-surge capacity, low thermal resistance of the device, high environmental temperature resistance and the like, and because the pressure drop of the device is low, the consumption power of the device is low, the output efficiency of the power supply of the whole machine is improved, the yield of the like products can be improved, and the cost is reduced;
(2) the utility model provides a diode packaging structure realizes that the device complete machine adds the electric in-process for a long time, and the pressure drop is little, and calorific capacity is low, under the long-term adverse circumstances of high temperature, low temperature, the pressure drop does not change, has increased the holistic life of this packaging structure, has improved practical function.
Drawings
Fig. 1 is a schematic view of the internal structure of the present invention;
FIG. 2 is a schematic view of the structure of an anode tube seat of the present invention;
fig. 3 is a schematic view of the cathode tube base structure of the present invention.
In the figure: 1. an anode stem; 101. a butt joint; 2. a cathode stem; 201. a mounting mat; 202. butting sleeves; 3. a chip; 4. a first anode gasket; 5. a second anode gasket; 401. and (4) mounting the groove.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides an embodiment: a high-power diode packaging structure comprises an anode tube seat 1, a cathode tube seat 2, a chip 3, a first anode gasket 4 and a second anode gasket 5, wherein the first anode gasket 4 is installed on the anode tube seat 1, a butt joint 101 is installed in the center of the inside of the anode tube seat 1, the chip 3 is installed on the first anode gasket 4, and the high-power diode packaging structure has the characteristics of low voltage drop, low heat productivity of a device, strong surge resistance, small thermal resistance of the device, high environmental temperature resistance and the like during working of a product, and is beneficial to improving the output efficiency of a power supply of the whole machine because the voltage drop of the device is low and the consumption power of the device is small;
the outer edge of the anode tube seat 1 and the outer edge of the cathode tube seat 2 are welded and fixed through a plasma welding technology, the butt joint sleeve 202 is arranged inside the cathode tube seat 2, the mounting pad 201 is arranged at the top of the butt joint sleeve 202, the long-term power-up process of a device complete machine is realized, the voltage drop is small, the heat productivity is low, the voltage drop does not change under the high-temperature and low-temperature long-term severe environment, the height sizes inside the anode tube seat 1 and the cathode tube seat 2 are small, a voltage drop chip can be fine, the chip packaging is not influenced, and the better application of the anode tube seat and the cathode tube seat in each operation field is ensured.
The working principle is as follows: when the packaging structure is used, the anode tube seat 1, the cathode tube seat 2, the chip 3, the first anode gasket 4 and the second anode gasket 5 are sequentially installed and fixed to complete packaging operation.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (4)
1. The utility model provides a high-power diode packaging structure, includes anode tube seat (1), cathode tube seat (2), chip (3), first anode pad (4) and second anode pad (5), its characterized in that: install first anode pad (4) on anode tube seat (1), install chip (3) on first anode pad (4), install second anode pad (5) on chip (3), install cathode tube seat (2) on second anode pad (5).
2. The high power diode package structure of claim 1, wherein: the outer edges of the anode tube seat (1) and the tube seat (2) are welded and fixed through a plasma welding technology.
3. The high power diode package structure of claim 1, wherein: and a butt joint (101) is arranged at the central position inside the anode tube seat (1).
4. The high power diode package structure of claim 1, wherein: the cathode tube seat (2) is internally provided with a butt joint sleeve (202), and the top of the butt joint sleeve (202) is provided with a mounting pad (201).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202120167895.3U CN214123860U (en) | 2021-01-21 | 2021-01-21 | High-power diode packaging structure |
Applications Claiming Priority (1)
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CN202120167895.3U CN214123860U (en) | 2021-01-21 | 2021-01-21 | High-power diode packaging structure |
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CN214123860U true CN214123860U (en) | 2021-09-03 |
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CN202120167895.3U Active CN214123860U (en) | 2021-01-21 | 2021-01-21 | High-power diode packaging structure |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116364661A (en) * | 2023-06-02 | 2023-06-30 | 清华大学 | Compression bonding type semiconductor device |
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2021
- 2021-01-21 CN CN202120167895.3U patent/CN214123860U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116364661A (en) * | 2023-06-02 | 2023-06-30 | 清华大学 | Compression bonding type semiconductor device |
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