CN103972272A - High-reliability surface mounted device - Google Patents
High-reliability surface mounted device Download PDFInfo
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- CN103972272A CN103972272A CN201410155091.6A CN201410155091A CN103972272A CN 103972272 A CN103972272 A CN 103972272A CN 201410155091 A CN201410155091 A CN 201410155091A CN 103972272 A CN103972272 A CN 103972272A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention discloses a high-reliability surface mounted device. The high-reliability surface mounted device comprises a diode chip, a first leading wire end is connected with the anode face of the diode chip through a soldering paste layer, and a second leading wire end is connected with the cathode face of the diode chip through the soldering paste layer. The surfaces, making contact with the soldering paste layer, of the first leading wire end and the second leading wire end are provided with at least two concave holes. The diode chip comprises a P-type mono-crystalline silicon wafer of a heavy doped P-type region, a light doped P-type region, a light doped N-type region and a heavy doped N-type region. A medium doped N-type region is arranged on the upper portion, making contact with the heavy doped N-type region, of the light doped N-type region. The periphery of the edge of the light doped P-type region is provided with a medium doped P-type region. Reverse leakage current of the whole device is greatly reduced, local temperature raise of the device is avoided, and high voltage resistance and reliability of the device are improved; shifting and eccentricity of a diode soldering terminal after soldering packaging are prevented, the yield of a diode is increased, electrical performance of the diode is improved, and cracking between an epoxy package and a copper leading wire is greatly reduced.
Description
Technical field
The present invention relates to a kind of surface mounted device, belong to semiconductor components and devices field.
Background technology
Surface mounted device is widely used in various electronic circuits.There is following technical problem in existing high reliability surface mounted device: under (1) high temperature, leakage current is large, the easy local temperature rise of device, and device high voltage performance and reliability are all poor; (2) volume is larger, installs inconveniently, and while installing, easily causes epoxy packages body and copper lead-in wire to ftracture, and affects diode chip for backlight unit and copper wire bonds fastness; (3) problems such as be easily shifted between copper lead-in wire and diode chip for backlight unit, finally cause the diode weld tabs bias after welding encapsulates, cause the yields decline of diode, it is unreliable to contact, the unstable and easy inefficacy of electrical property.
Summary of the invention
The invention provides a kind of high reliability surface mounted device, this surface mounted device reduces the reverse leakage current of whole device greatly, has avoided the local temperature rise of device, has improved device high voltage performance and reliability; Also prevent the diode weld tabs bias after displacement, welding encapsulation, improved yields and the electrical property of diode, greatly lowered cracking between epoxy packages body and copper lead-in wire.
For achieving the above object, the technical solution used in the present invention is: a kind of high reliability surface mounted device, comprising:
Diode chip for backlight unit, it has positive pole-face and negative pole face;
The first bronze medal lead-in wire, this first bronze medal lead-in wire one end is the first weld zone, this first bronze medal lead-in wire other end, as the anode tap subarea of rectifier diode device, has the first flex area between one end, anode tap subarea and first one end, weld zone;
The second bronze medal lead-in wire, this second bronze medal lead-in wire one end is the second weld zone, this second bronze medal lead-in wire other end, as the cathode terminal subarea of rectifier diode device, has the second flex area between one end, cathode terminal subarea and second one end, weld zone;
Being connected of the positive pole-face of the first lead ends that is positioned at the first weld zone other end by layer of solder paste and described diode chip for backlight unit, being connected of the negative pole face of the second lead ends that is positioned at the second weld zone other end by layer of solder paste and described diode chip for backlight unit, the surface that the first lead ends, the second lead ends contact with layer of solder paste is provided with at least 2 potholes;
The first weld zone of described the first bronze medal lead-in wire, the second middle part, weld zone of the second bronze medal lead-in wire are equipped with raised line;
One epoxy packages body is coated described diode chip for backlight unit, the first weld zone and the second weld zone, and the first flex area, the second flex area lay respectively at epoxy packages body both sides, and anode tap subarea, cathode terminal district are positioned at epoxy packages body below;
Described diode chip for backlight unit comprises the p type single crystal silicon sheet substrate in heavy doping p type island region, doped with P type district, light dope N-type district and heavy doping N-type district, this light dope N-type district contacts formation knot contact-making surface with doped with P type district and it is positioned at directly over it, heavy doping N-type district contacts and is positioned at directly over it with light dope N-type district, and heavy doping p type island region contacts and is positioned under it with doped with P type district;
The middle section in heavy doping N-type district covers the first metal layer as negative pole, and heavy doping p type island region lower surface covers the second metal level as anode;
The upper area that described light dope N-type district contacts with heavy doping N-type district and the peripheral regions that is arranged in light dope N-type area edge have doped N-type district, and the upper surface in Ci Zhong doped N-type district contacts with the lower surface in heavy doping N-type district;
The lower area that described doped with P type district contacts with heavy doping p type island region and the peripheral regions that is arranged in doped with P type area edge have doping p type island region, and the lower surface of the p type island region of adulterating in this contacts with the upper surface of heavy doping p type island region.
In technique scheme, further improved plan is as follows:
1. in such scheme; described p type single crystal silicon sheet substrate surrounding has annular relief area; this annular relief area is positioned at doped with P type district, light dope N-type district and heavy doping N-type district surrounding; the surface coverage of described annular relief area has insulation passivation protection layer, and this insulation passivation protection floor inner side extends to the fringe region of heavy doping N-type district upper surface.
2. in such scheme, the lateral surface in described middle doped N-type district contacts with annular relief area, and the lateral surface of the p type island region of adulterating in this contacts with annular relief area.
3. in such scheme, described raised line respectively with the first weld zone, the second weld zone is vertical arranges, the length of described raised line is greater than the length of the first lead ends, the second lead ends.
4. in such scheme, described the first weld zone is parallel with anode tap subarea and it is vertical with the first flex area, and described the second weld zone is parallel with cathode terminal subarea and it is vertical with the second flex area.
Because technique scheme is used, the present invention compared with prior art has following advantages:
High reliability surface mounted device of the present invention, it comprises heavy doping p type island region, doped with P type district, the p type single crystal silicon sheet substrate in light dope N-type district and heavy doping N-type district, annular relief area is positioned at doped with P type district, light dope N-type district and heavy doping N-type district surrounding, the upper area that light dope N-type district contacts with heavy doping N-type district and the peripheral regions that is arranged in light dope N-type area edge have doped N-type district, the lower area that doped with P type district contacts with heavy doping p type island region and the peripheral regions that is arranged in doped with P type area edge have doping p type island region, at low pressure (below 10V) TVS under tunnel breakdown pattern, effectively avoid electric charge to expand to corner, edge and electric field expansion, ensure at high temperature to reduce in leakage current from surperficial leakage current, greatly reduce the reverse leakage current of whole device, avoid the local temperature rise of device, device high voltage performance and reliability are improved, secondly, it comprises diode chip for backlight unit, the first bronze medal lead-in wire, the second bronze medal lead-in wire, the first weld zone of the first bronze medal lead-in wire, the second middle part, weld zone of the second bronze medal lead-in wire is equipped with raised line, one epoxy packages body is coated described diode chip for backlight unit, the first weld zone and the second weld zone, the first flex area, the second flex area lays respectively at epoxy packages body both sides, anode tap subarea, cathode terminal district is positioned at epoxy packages body below, reduce volume simultaneously, be convenient to easy for installation, and greatly lower cracking between epoxy packages body and copper lead-in wire, and greatly reduce and in follow-up use, cause diode chip for backlight unit and the not firm risk of copper wire bonds, secondly, being connected of the positive pole-face of its first lead ends that is positioned at the first weld zone other end by layer of solder paste and diode chip for backlight unit, being connected of the negative pole face of the second lead ends that is positioned at the second weld zone other end by layer of solder paste and diode chip for backlight unit, the surface that the first lead ends, the second lead ends contact with layer of solder paste is provided with at least 2 potholes, prevent the diode weld tabs bias after displacement, welding encapsulation, improved yields, reliability and the electrical property of diode.
Brief description of the drawings
Accompanying drawing 1 is high reliability surface mounted device structural representation of the present invention;
Accompanying drawing 2 is the high reliability surface mounted device partial structurtes schematic diagram of accompanying drawing 1.
In above accompanying drawing: 1, diode chip for backlight unit; 2, the first bronze medal lead-in wire; 21, the first weld zone; 22, anode tap subarea; 23, the first flex area; 3, the second bronze medal lead-in wire; 31, the second weld zone; 32, cathode terminal subarea; 33, the second flex area; 4, the first lead ends; 5, layer of solder paste; 6, the second lead ends; 7, epoxy packages body; 8, raised line; 9, pothole; 11, heavy doping p type island region; 12, doped with P type district; 13, light dope N-type district; 14, heavy doping N-type district; 15, p type single crystal silicon sheet substrate; 16, annular relief area; 17, insulation passivation protection layer; 18, the first metal layer; 19, the second metal level; 20, middle doped N-type district; 24, middle doping p type island region.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Embodiment: a kind of high reliability surface mounted device, comprising:
Diode chip for backlight unit 1, it has positive pole-face and negative pole face;
The first bronze medal lead-in wire 2, this first bronze medal 2 one end that go between are the first weld zone 21, this first bronze medal goes between 2 other ends as the anode tap subarea 22 of rectifier diode device, between 22 one end, anode tap subarea and 21 one end, the first weld zone, has the first flex area 23;
The second bronze medal lead-in wire 3, this second bronze medal 3 one end that go between are the second weld zone 31, this second bronze medal goes between 3 other ends as the cathode terminal subarea 32 of rectifier diode device, between 32 one end, cathode terminal subarea and 31 one end, the second weld zone, has the second flex area 33;
Being connected of the positive pole-face of the first lead ends 4 that is positioned at first weld zone 21 other ends by layer of solder paste 5 and described diode chip for backlight unit 1, being connected of the negative pole face of the second lead ends 6 that is positioned at second weld zone 31 other ends by layer of solder paste 5 and described diode chip for backlight unit 1, the surface that the first lead ends 4, the second lead ends 6 contact with layer of solder paste 5 is provided with at least 2 potholes 9;
The first weld zone 21 of described the first bronze medal lead-in wire 2,31 middle parts, the second weld zone of the second bronze medal lead-in wire 3 are equipped with raised line 8;
The coated described diode chip for backlight unit 2 of one epoxy packages body 7, the first weld zone 21 and 31, the first flex area 23, the second weld zone, the second flex area 33 lay respectively at epoxy packages body 7 both sides, and anode tap subarea 22, cathode terminal subarea 32 are positioned at epoxy packages body 7 belows;
Described diode chip for backlight unit 1 comprises the p type single crystal silicon sheet substrate 15 in heavy doping p type island region 11, doped with P type district 12, light dope N-type district 13 and heavy doping N-type district 14, this light dope N-type district 13 contacts formation knot contact-making surface with doped with P type district 12 and it is positioned at directly over it, heavy doping N-type district 14 contacts and is positioned at directly over it with light dope N-type district 13, and heavy doping p type island region 11 contacts and is positioned under it with doped with P type district 12;
The middle section in heavy doping N-type district 14 covers the first metal layer 18 as negative pole, and heavy doping p type island region 11 lower surfaces cover the second metal level 19 as anode;
The upper area that described light dope N-type district 13 contacts with heavy doping N-type district 14 and the peripheral regions that is arranged in 13 edges, light dope N-type district have doped N-type district 11, and the upper surface in Ci Zhong doped N-type district 11 contacts with the lower surface in heavy doping N-type district 14;
The lower area that described doped with P type district 12 contacts with heavy doping p type island region 11 and the peripheral regions that is arranged in 12 edges, doped with P type district have doping p type island region 24, and the lower surface of the p type island region 24 of adulterating in this contacts with the upper surface of heavy doping p type island region 11.
Above-mentioned p type single crystal silicon sheet substrate 15 surroundings have annular relief area 16; this annular relief area 16 is positioned at doped with P type district 12, light dope N-type district 13 and heavy doping N-type district 14 surroundings; the surface coverage of described annular relief area 16 has insulation passivation protection layer 17, and these insulation passivation protection floor 17 inner sides extend to the fringe region of heavy doping N-type district 14 upper surfaces.
The lateral surface in above-mentioned middle doped N-type district 20 contacts with annular relief area 16, and the lateral surface of the p type island region 24 of adulterating in this contacts with annular relief area 16.
Above-mentioned raised line 8 respectively with the first weld zone 21, the second vertical setting in weld zone 31; The length of described raised line 8 is greater than the length of the first lead ends 4, the second lead ends 6.
Above-mentioned the first weld zone 21 is parallel with anode tap subarea 22 and it is vertical with the first flex area 23, and described the second weld zone 31 is parallel with cathode terminal subarea 32 and it is vertical with the second flex area 33.
While adopting above-mentioned high reliability surface mounted device, its at low pressure (below 10V) TVS under tunnel breakdown pattern, effectively avoid electric charge to expand to corner, edge and electric field expansion, ensure at high temperature to reduce in leakage current from surperficial leakage current, greatly reduce the reverse leakage current of whole device, avoid the local temperature rise of device, improved device high voltage performance and reliability; Secondly, it has reduced volume simultaneously, is convenient to easy for installationly, and has greatly lowered between epoxy packages body and copper lead-in wire and ftractures, and greatly reduced and in follow-up use, cause diode chip for backlight unit and the not firm risk of copper wire bonds; Secondly, being connected of the positive pole-face of its first lead ends that is positioned at the first weld zone other end by layer of solder paste and diode chip for backlight unit, being connected of the negative pole face of the second lead ends that is positioned at the second weld zone other end by layer of solder paste and diode chip for backlight unit, the surface that the first lead ends, the second lead ends contact with layer of solder paste is provided with at least 2 potholes, prevent the diode weld tabs bias after displacement, welding encapsulation, improved yields, reliability and the electrical property of diode.
Above-described embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (5)
1. a high reliability surface mounted device, is characterized in that: comprising:
Diode chip for backlight unit (1), it has positive pole-face and negative pole face;
The first bronze medal lead-in wire (2), this the first bronze medal lead-in wire (2) one end is the first weld zone (21), this the first bronze medal lead-in wire (2) other end, as the anode tap subarea (22) of rectifier diode device, has the first flex area (23) between (22) one end, anode tap subarea and one end, the first weld zone (21);
The second bronze medal lead-in wire (3), this the second bronze medal lead-in wire (3) one end is the second weld zone (31), this the second bronze medal lead-in wire (3) other end, as the cathode terminal subarea (32) of rectifier diode device, has the second flex area (33) between (32) one end, cathode terminal subarea and one end, the second weld zone (31);
Being connected of the positive pole-face of the first lead ends (4) that is positioned at the first weld zone (21) other end by layer of solder paste (5) and described diode chip for backlight unit (1), being connected of the negative pole face of the second lead ends (6) that is positioned at the second weld zone (31) other end by layer of solder paste (5) and described diode chip for backlight unit (1), the surface that the first lead ends (4), the second lead ends (6) contact with layer of solder paste (5) is provided with at least 2 potholes (9);
First weld zone (21) of described the first bronze medal lead-in wire (2), the middle part, the second weld zone (31) of the second bronze medal lead-in wire (3) are equipped with raised line (8);
One epoxy packages body (7) is coated described diode chip for backlight unit (2), the first weld zone (21) and the second weld zone (31), the first flex area (23), the second flex area (33) lay respectively at epoxy packages body (7) both sides, and anode tap subarea (22), cathode terminal subarea (32) are positioned at epoxy packages body (7) below;
Described diode chip for backlight unit (1) comprises the p type single crystal silicon sheet substrate (15) in heavy doping p type island region (11), doped with P type district (12), light dope N-type district (13) and heavy doping N-type district (14), this light dope N-type district (13) contacts formation knot contact-making surface with doped with P type district (12) and it is positioned at directly over it, heavy doping N-type district (14) contacts and is positioned at directly over it with light dope N-type district (13), and heavy doping p type island region (11) contact and are positioned under it with doped with P type district (12);
The middle section in heavy doping N-type district (14) covers the first metal layer (18) as negative pole, and heavy doping p type island region (11) lower surface covers the second metal level (19) as anode;
The upper area that described light dope N-type district (13) contacts with heavy doping N-type district (14) and the peripheral regions that is arranged in edge, light dope N-type district (13) have doped N-type district (11), and the upper surface in Ci Zhong doped N-type district (11) contacts with the lower surface in heavy doping N-type district (14);
The lower area that described doped with P type district (12) contacts with heavy doping p type island region (11) and the peripheral regions that is arranged in edge, doped with P type district (12) have doping p type island region (24), and the lower surface of the p type island region (24) of adulterating in this contacts with the upper surface of heavy doping p type island region (11).
2. high reliability surface mounted device according to claim 1; it is characterized in that: described p type single crystal silicon sheet substrate (15) surrounding has annular relief area (16); this annular relief area (16) is positioned at doped with P type district (12), light dope N-type district (13) and heavy doping N-type district (14) surrounding; the surface coverage of described annular relief area (16) has insulation passivation protection layer (17), and this insulation passivation protection floor (17) inner side extends to the fringe region of heavy doping N-type district (14) upper surface.
3. high reliability surface mounted device according to claim 1, is characterized in that: the lateral surface in described middle doped N-type district (20) contacts with annular relief area (16), and the lateral surface of the p type island region of adulterating in this (24) contacts with annular relief area (16).
4. high reliability surface mounted device according to claim 1, is characterized in that: described raised line (8) respectively with the first weld zone (21), the second weld zone (31) vertical setting; The length of described raised line (8) is greater than the length of the first lead ends (4), the second lead ends (6).
5. high reliability surface mounted device according to claim 1, it is characterized in that: described the first weld zone (21) is parallel with anode tap subarea (22) and it is vertical with the first flex area (23), described the second weld zone (31) is parallel with cathode terminal subarea (32) and it is vertical with the second flex area (33).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410155091.6A CN103972272A (en) | 2014-04-18 | 2014-04-18 | High-reliability surface mounted device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410155091.6A CN103972272A (en) | 2014-04-18 | 2014-04-18 | High-reliability surface mounted device |
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| Publication Number | Publication Date |
|---|---|
| CN103972272A true CN103972272A (en) | 2014-08-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410155091.6A Pending CN103972272A (en) | 2014-04-18 | 2014-04-18 | High-reliability surface mounted device |
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| CN (1) | CN103972272A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110098161A (en) * | 2019-05-15 | 2019-08-06 | 苏州达晶微电子有限公司 | Device of surge protector |
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| CN2432684Y (en) * | 2000-07-05 | 2001-05-30 | 李安 | Mini flattened Haiou diode |
| US20050051908A1 (en) * | 2003-07-25 | 2005-03-10 | Masaki Ichinose | Diode exhibiting a high breakdown voltage |
| JP2007180223A (en) * | 2005-12-27 | 2007-07-12 | Renesas Technology Corp | Structure and manufacturing method of semiconductor device |
| CN202259312U (en) * | 2011-08-29 | 2012-05-30 | 程志强 | Electronic diode |
| CN202871802U (en) * | 2012-11-07 | 2013-04-10 | 如皋市大昌电子有限公司 | Plastic packaging epitaxial ultrafast recovery diode |
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2014
- 2014-04-18 CN CN201410155091.6A patent/CN103972272A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233795A (en) * | 1998-02-18 | 1999-08-27 | Toshiba Corp | High breakdown voltage semiconductor element |
| CN2432684Y (en) * | 2000-07-05 | 2001-05-30 | 李安 | Mini flattened Haiou diode |
| US20050051908A1 (en) * | 2003-07-25 | 2005-03-10 | Masaki Ichinose | Diode exhibiting a high breakdown voltage |
| JP2007180223A (en) * | 2005-12-27 | 2007-07-12 | Renesas Technology Corp | Structure and manufacturing method of semiconductor device |
| CN202259312U (en) * | 2011-08-29 | 2012-05-30 | 程志强 | Electronic diode |
| CN202871802U (en) * | 2012-11-07 | 2013-04-10 | 如皋市大昌电子有限公司 | Plastic packaging epitaxial ultrafast recovery diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110098161A (en) * | 2019-05-15 | 2019-08-06 | 苏州达晶微电子有限公司 | Device of surge protector |
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