CN201450007U - Bidirectional trigger diode chip - Google Patents
Bidirectional trigger diode chip Download PDFInfo
- Publication number
- CN201450007U CN201450007U CN2009200480111U CN200920048011U CN201450007U CN 201450007 U CN201450007 U CN 201450007U CN 2009200480111 U CN2009200480111 U CN 2009200480111U CN 200920048011 U CN200920048011 U CN 200920048011U CN 201450007 U CN201450007 U CN 201450007U
- Authority
- CN
- China
- Prior art keywords
- zone
- glassivation
- diode chip
- diffusion
- trigger diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model discloses a bidirectional trigger diode chip which relates to the technical field of manufacture of semiconductor devices. The front surface and the back surface of a P-zone are respectively provided with a P diffusion zone, the other sides of the two P diffusion zones are respectively provided with an N+ diffusion zone, and the other sides of the two N+ diffusion zones are respectively provided with a coating zone; the periphery of the coating zone is provided with a glassivation zone; and the periphery of the glassivation zone is provided with a plate cutting zone. The bidirectional trigger diode chip can reach different breakdown voltage values, can avoid the generation of glassivation film stress as the periphery of the coating zone is provided with the plate cutting zone instead of cutting plates on a glassivation layer, has firm structure, and can reduce leakage current, especially the leakage current under high temperature, and further improve the reliability; and the bidirectional trigger diode chip can be used for producing 4-inch silicon chips, greatly improves production efficiency, has convenient operation and reduces production cost.
Description
Technical field
The utility model relates to a kind of preparation method of manufacturing technology field, particularly bidirectional trigger diode of semiconductor device.
Background technology
Advanced technology is to adopt a kind of two mill of P+ type single-chip of low-resistivity to be prepared in the current bidirectional trigger diode chip manufacturing, its processing step is: pickling, cleaning, diffusion, cutting, glassivation, plating, alloy, plating, test, scribing, sliver, the weak point of this method is: the puncture voltage of product is by the resistivity decision of selected materials, and is unadjustable; The electrode of product forms with plating mode, and the electrode material of positive and negative two faces is the same, therefore can only select axial encapsulation for use, and the packing forms of product is single; Directly scribing on glass passivation layer influences reliability of products; In order to reach the negative resistance performance of product, must adopt the ultra-thin silicon monocrystal material to produce (silicon wafer thickness 100 μ m), therefore can only use the silicon sheet material production of the minor diameter of 2 inches or 3 inches, be not easy to the expansion of output, and easily fragment is made troubles to operation.For a long time, in field of manufacturing semiconductor devices, people have made unremitting effort at aspects such as structural design, process modification, performance optimization, cost reduction, reliabilities.
The utility model content
The purpose of this utility model provides that a kind of two-way breakdown voltage value is adjustable, packing forms is various, leakage current is little, the bidirectional trigger diode chip of the reliable novel structure of steady quality.
The utility model is provided with the P diffusion region respectively at the tow sides in P-district, another side in described two P diffusion regions is provided with the N+ diffusion region respectively, another side in described two N+ diffusion regions is provided with the plated film district respectively, periphery in described plated film district is provided with the glassivation district, and the periphery in described glassivation district is provided with scribe area.
The utlity model has the diffusion region twice,, satisfy user's needs to reach different breakdown voltage values; Periphery in the plated film district is provided with scribe area, and the generation of glassivation membrane stress is avoided in not scribing on glass passivation layer, and structure is firm, has reduced leakage current, and especially the leakage current under the high temperature further improves reliability of products.Because the particularity of product structure of the present utility model, selected material is the thick material of normal sheet (silicon wafer thickness 220～300 μ m), therefore can be used for the production of 4 inches silicon chips, and production efficiency improves greatly, and is easy to operate, also reduced production cost.
Description of drawings
Fig. 1 is that the A-A of Fig. 2 is to cross-sectional view.
Fig. 2 is the utility model transversary schematic diagram.
Among the figure, 1 is the P-district, and 2 is that P diffusion region, 3 is that N+ diffusion region, 4 is that P diffusion region, 5 is that N+ diffusion region, 6 is that plated film district, 7 is that glassivation district, 8 is a scribe area.
Embodiment
Method according to following statement is produced bidirectional trigger diode chip:
Choosing resistivity is 10～20 Ω .cm, and sheet is thick to be the P-type silicon materials twin polishing sheet of 200～300 μ m.
Operating procedure:
1) silicon chip cleans: with No. 1 electronics cleaning fluid (NH
4OH: H
2O
2: H
2The volume ratio of O is 1: 2: 5) and No. 2 electronics cleaning fluid (HCL: H
2O
2: H
2The volume ratio of O is 1: 2: 6) to clean, 85 ± 5 ℃ of the reaction temperatures of cleaning fluid in 10 minutes reaction time, with deionized water (resistivity is greater than 14M Ω .cm) flushing, 30 minutes time, dry.
2) diffusion for the first time: the silicon chip tow sides are coated the boron liquid source, load onto the slide glass boat, push diffusion furnace, are warming up to 1240 ± 5 ℃, at N
2/ O
2Spread in the atmosphere 30～40 hours, diffusion after finishing is pulled out the slide glass boat, takes off silicon chip.
3) clean: float the surface boron silex glass with rare HF solution, deionized water rinsing is clean.Carry out cleaning silicon chip again, method is with 1) step.
4) diffusion for the second time: carry out phosphorus prediffusion and spread again, 1160 ± 5 ℃ of prediffusion 4 hours, and then at 1240 ± 5 ℃ O
2Spread in the atmosphere 2～3 hours, to reach suitable breakover voltage and resilience voltage.
5) the silicon chip tow sides are coated with 450 photoresists, use HF: NH
4F: H
2The O volume ratio is that 3: 6: 10 mixed solution removes clean surperficial SiO
2, and at HAC: HNO
3: HF: HNO
3Volume ratio is 1: 0.2: 1.25: carry out the table top moulding in 0.5, carry out the PN junction glass passivation protection again.
6) the silicon chip tow sides are coated with 450 photoresists, use HF: NH
4F: H
2The O volume ratio is that 3: 6: 10 mixed solution removes clean surperficial SiO
2, positive evaporation Al (aluminium), reverse side evaporation TiNiAg.The silicon chip tow sides are coated with 450 photoresists, remove unnecessary Al (aluminium) and TiNiAg.
7) the silicon chip tow sides are coated with 450 photoresists, remove the glassy layer in the window, expose scribe line.
8) bidirectional trigger diode chip has been made in scribing.
The product structure feature that forms:
Tow sides in P-district 1 are provided with two P diffusion regions 2,4 respectively, another side in two P diffusion regions 2,4 is provided with N+ diffusion region 3,5 respectively, another side in two N+ diffusion regions 3,5 is provided with plated film district 6 respectively, periphery in plated film district 6 is provided with glassivation district 7, and the periphery in glassivation district 7 is provided with scribe area 8.
Claims (1)
1. bidirectional trigger diode chip, it is characterized in that the P diffusion region being set respectively at the tow sides in P-district, another side in described two P diffusion regions is provided with the N+ diffusion region respectively, another side in described two N+ diffusion regions is provided with the plated film district respectively, periphery in described plated film district is provided with the glassivation district, and the periphery in described glassivation district is provided with scribe area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200480111U CN201450007U (en) | 2009-08-25 | 2009-08-25 | Bidirectional trigger diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200480111U CN201450007U (en) | 2009-08-25 | 2009-08-25 | Bidirectional trigger diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201450007U true CN201450007U (en) | 2010-05-05 |
Family
ID=42554730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200480111U Expired - Fee Related CN201450007U (en) | 2009-08-25 | 2009-08-25 | Bidirectional trigger diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201450007U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522333A (en) * | 2012-01-09 | 2012-06-27 | 薛列龙 | Manufacturing method for planar bidirectional trigger diode chip |
| CN102867747A (en) * | 2012-10-17 | 2013-01-09 | 如皋市大昌电子有限公司 | Production process for O.J diode |
| CN113161237A (en) * | 2021-04-20 | 2021-07-23 | 江苏韦达半导体有限公司 | Manufacturing process of inner groove mesa process trigger diode chip |
-
2009
- 2009-08-25 CN CN2009200480111U patent/CN201450007U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522333A (en) * | 2012-01-09 | 2012-06-27 | 薛列龙 | Manufacturing method for planar bidirectional trigger diode chip |
| CN102522333B (en) * | 2012-01-09 | 2013-12-25 | 薛列龙 | Manufacturing method for planar bidirectional trigger diode chip |
| CN102867747A (en) * | 2012-10-17 | 2013-01-09 | 如皋市大昌电子有限公司 | Production process for O.J diode |
| CN102867747B (en) * | 2012-10-17 | 2015-03-04 | 如皋市大昌电子有限公司 | Production process for O.J diode |
| CN113161237A (en) * | 2021-04-20 | 2021-07-23 | 江苏韦达半导体有限公司 | Manufacturing process of inner groove mesa process trigger diode chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20180825 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |