CN103606522A - GPP diode chip production process - Google Patents
GPP diode chip production process Download PDFInfo
- Publication number
- CN103606522A CN103606522A CN201310503520.XA CN201310503520A CN103606522A CN 103606522 A CN103606522 A CN 103606522A CN 201310503520 A CN201310503520 A CN 201310503520A CN 103606522 A CN103606522 A CN 103606522A
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- CN
- China
- Prior art keywords
- silicon chip
- separation
- cleaning
- photo
- carried out
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 238000000926 separation method Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 206010070834 Sensitisation Diseases 0.000 claims description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005488 sandblasting Methods 0.000 claims description 6
- 230000008313 sensitization Effects 0.000 claims description 6
- 238000010422 painting Methods 0.000 claims description 4
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000006263 metalation reaction Methods 0.000 claims description 3
- 239000012046 mixed solvent Substances 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 abstract 3
- 239000004576 sand Substances 0.000 abstract 3
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Weting (AREA)
Abstract
Provided is a GPP diode chip production process, which relates to the technical field of diode chip manufacturing. The whole production process comprises the steps of silicon wafer cleaning, phosphorus spraying, primary separation, single-sided sand blowing, boron coating, silicon wafer diffusion, secondary separation, double-sided sand blowing, photo-etching and etching, cleaning and drying, surface metallization and silicon wafer finishing. Especially for the step of photo-etching, a cleaned silicon wafer needs to be coated with photo-resist, aligned with a mask plate and exposed, then, a non-photosensitized part of the photo-resist layer is dissolved by developing solution and a silicon dioxide layer not protected by the photo-resist is dissolved by corrosive liquid, and finally a photosensitized part of the photo-resist layer is removed. Through repeated separation, cleaning and sand blowing in the whole process, the production efficiency can be effectively improved and the production cost is reduced. Moreover, the independent innovative diffusion process can help improve the product quality and the work efficiency.
Description
Technical field:
The present invention relates to diode chip for backlight unit manufacturing technology field, be specifically related to the GPP diode chip for backlight unit technological process of production.
Background technology:
GPP chip is mainly used in SMD encapsulation, bridge heap and high-grade 1N400 series rectifying tube, wherein SMD device is the manufacturing mainstream technology of the western regions of the Yunnan Province information, and country carries out emphasis to SMD to support and encourage, the popularity in diode applications field and irreplaceability determine the extensity of this industry prospect, GPP is widely used in rectifier bridge stack at present, than common STD, there are higher reliability and stability, but some more advanced technology are all controlled by scale state owned enterprise at home at present, the technology adopting in common manufacturing enterprise is fairly simple, and production cost is high, production efficiency is lower.
Summary of the invention:
Technical problem to be solved by this invention is to provide a kind of and can effectively enhances productivity, and reduces production costs, and improves the quality of products and increases the GPP diode chip for backlight unit technological process of production of diode chip for backlight unit stability.
Technical problem to be solved by this invention adopts following technical scheme to realize:
The GPP diode chip for backlight unit technological process of production mainly comprises following technical step:
(1) silicon chip of choosing good quality cleans silicon chip, and silicon chip is placed on cleaning machine it is carried out to physical cleaning, is taken out stand-by after cleaning completes;
(2) after completing, use Wafer Cleaning machine to carry out note phosphorus and the operation of attached phosphorus to it;
(3) operated rear employing laser technology silicon chip has been carried out to separation;
(4) separation is carried out one side blast to the silicon chip that separation is crossed after completing, and places it in sand-blasting machine the one side of silicon chip is carried out to sandblast, cleans then stand-by after sandblast completes;
(5) silicon chip after one side blast is sprayed to boron operation, at sandblast face, apply the mixed solvent that one deck is dissolved with diboron trioxide and aluminum nitrate;
(6) silicon chip is placed on through 1220
temperature equipment in about 2 hours, make phosphorus atoms be diffused into silicon chip inside;
(7) silicon chip after diffusion is placed in hydrofluoric acid and after a couple of days, makes it automatically carry out silicon chip separation;
(8) silicon chip after separation is placed in sand-blasting machine, blast is proceeded in the two sides of the silicon chip after separation, after sandblast completes, clean stand-by;
(9) then alignment mask plate exposure of the silicon chip painting photoresist after cleaning is completed, then with developing solution dissolution not sensitization photoresist layer, with corrosive liquid, dissolve the silicon dioxide layer without photoresist protection, the photoresist layer of finally removing sensitization, completes photoetching;
(10) silicon chip after photoetching is completed carries out wet etching, makes it remove the material of shielding film, is then cleaned up stand-by;
(11) silicon chip after etching is carried out to surface metalation processing, make it seem that more satin is beautiful, and then silicon chip is carried out to photoetching treatment one time;
(12) even if complete the production of wafer after finishing dealing with.
The invention has the beneficial effects as follows: the separation, cleaning and the blast that in whole process, entered repeatedly can effectively be enhanced productivity, reduce production costs, and the diffusion technology of autonomous innovation can improve the quality of products, in increasing work efficiency.
Embodiment:
For technological means, creation characteristic that the present invention is realized, reach object and effect is easy to understand, below in conjunction with concrete example, further set forth the present invention.
The GPP diode chip for backlight unit technological process of production mainly comprises that following methods processes:
The silicon chip of choosing good quality cleans silicon chip, silicon chip is placed on cleaning machine it is carried out to physical cleaning, after cleaning completes, taken out stand-by, after completing, use Wafer Cleaning boderizing machine to carry out note phosphorus and the operation of attached phosphorus to it, operated rear employing laser technology silicon chip has been carried out to separation, after separation completes, the silicon chip that separation is crossed is carried out to one side blast, place it in sand-blasting machine the one side of silicon chip is carried out to sandblast, after sandblast completes, clean then stand-by, silicon chip after one side blast is sprayed to boron operation, at sandblast face, apply the mixed solvent that one deck is dissolved with diboron trioxide and aluminum nitrate, silicon chip is placed on through 1220
temperature equipment in about 2 hours, make phosphorus atoms be diffused into silicon chip inside, silicon chip after diffusion is placed in hydrofluoric acid and after a couple of days, makes it automatically carry out silicon chip separation, silicon chip after separation is placed in sand-blasting machine, blast is proceeded on two sides to the silicon chip after separation, after sandblast completes, clean stand-by, silicon chip painting photoresist after cleaning is completed is alignment mask plate exposure then, then with the developing solution dissolution photoresist layer of sensitization not, with corrosive liquid, dissolve the silicon dioxide layer without photoresist protection, finally remove the photoresist layer of sensitization, complete photoetching, silicon chip after photoetching is completed carries out wet etching, make it remove the material of shielding film, then cleaned up stand-by, silicon chip after etching is carried out to surface metalation processing, make it seem that more satin is beautiful, and then silicon chip is carried out to photoetching treatment one time, even if complete the production of wafer after finishing dealing with.
In the process of whole production, must follow: cleaning silicon chip-spray phosphorus-first separation-one side blast-painting boron-silicon chip diffusion-secondary separation-two-sided blast-photoetching, etching-cleaning, drying-surface metalation-complete whole process of wafer, the GPP diode chip for backlight unit of producing so just can be more stable, and while efficiency has also improved cost and also relatively decreased.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (1)
- The 1.GPP diode chip for backlight unit technological process of production is characterized in that:The GPP diode chip for backlight unit technological process of production mainly comprises following technical step:(1) silicon chip of choosing good quality cleans silicon chip, and silicon chip is placed on cleaning machine it is carried out to physical cleaning, is taken out stand-by after cleaning completes;(2) after completing, use Wafer Cleaning machine to carry out note phosphorus and the operation of attached phosphorus to it;(3) operated rear employing laser technology silicon chip has been carried out to separation;(4) separation is carried out one side blast to the silicon chip that separation is crossed after completing, and places it in sand-blasting machine the one side of silicon chip is carried out to sandblast, cleans then stand-by after sandblast completes;(5) silicon chip after one side blast is sprayed to boron operation, at sandblast face, apply the mixed solvent that one deck is dissolved with diboron trioxide and aluminum nitrate;(6) silicon chip is placed on to 1220temperature equipment in about 2 hours, make phosphorus atoms be diffused into silicon chip inside;
(7) silicon chip after diffusion is placed in hydrofluoric acid and after a couple of days, makes it automatically carry out silicon chip separation;(8) silicon chip after separation is placed in sand-blasting machine, blast is proceeded in the two sides of the silicon chip after separation, after sandblast completes, clean stand-by;(9) then alignment mask plate exposure of the silicon chip painting photoresist after cleaning is completed, then with developing solution dissolution not sensitization photoresist layer, with corrosive liquid, dissolve the silicon dioxide layer without photoresist protection, the photoresist layer of finally removing sensitization, completes photoetching;(10) silicon chip after photoetching is completed carries out wet etching, makes it remove the material of shielding film, is then cleaned up stand-by;(11) silicon chip after etching is carried out to surface metalation processing, make it seem that more satin is beautiful, and then silicon chip is carried out to photoetching treatment one time;(12) even if complete the production of wafer after finishing dealing with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310503520.XA CN103606522A (en) | 2013-10-23 | 2013-10-23 | GPP diode chip production process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310503520.XA CN103606522A (en) | 2013-10-23 | 2013-10-23 | GPP diode chip production process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103606522A true CN103606522A (en) | 2014-02-26 |
Family
ID=50124738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310503520.XA Pending CN103606522A (en) | 2013-10-23 | 2013-10-23 | GPP diode chip production process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103606522A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606523A (en) * | 2013-11-06 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
| CN104112651A (en) * | 2014-07-03 | 2014-10-22 | 扬州虹扬科技发展有限公司 | Rectifier chip making process |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1783516A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Rectifier diode, chip special for producing rectifier diode and producing method |
| CN101188199A (en) * | 2007-11-20 | 2008-05-28 | 中国振华集团永光电子有限公司 | A making method for quick recovery silicon rectifying diode chip |
| CN101604629A (en) * | 2009-07-02 | 2009-12-16 | 浙江常山隆昌电子有限公司 | A kind of GPP chip caustic solution of excellent preface method |
| CN102087976A (en) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | Fast recovery diode (FRD) chip and production process thereof |
| CN102244104A (en) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102324390A (en) * | 2011-10-21 | 2012-01-18 | 四川太晶微电子有限公司 | Rectifier diode core manufacturing method |
| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
-
2013
- 2013-10-23 CN CN201310503520.XA patent/CN103606522A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1783516A (en) * | 2004-11-30 | 2006-06-07 | 安徽省祁门县黄山电器有限责任公司 | Rectifier diode, chip special for producing rectifier diode and producing method |
| CN101188199A (en) * | 2007-11-20 | 2008-05-28 | 中国振华集团永光电子有限公司 | A making method for quick recovery silicon rectifying diode chip |
| CN101604629A (en) * | 2009-07-02 | 2009-12-16 | 浙江常山隆昌电子有限公司 | A kind of GPP chip caustic solution of excellent preface method |
| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
| CN102087976A (en) * | 2010-12-10 | 2011-06-08 | 天津中环半导体股份有限公司 | Fast recovery diode (FRD) chip and production process thereof |
| CN102244104A (en) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | Flat and lug combined bidirectional diode chip and manufacturing process thereof |
| CN102324390A (en) * | 2011-10-21 | 2012-01-18 | 四川太晶微电子有限公司 | Rectifier diode core manufacturing method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103606523A (en) * | 2013-11-06 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
| CN104112651A (en) * | 2014-07-03 | 2014-10-22 | 扬州虹扬科技发展有限公司 | Rectifier chip making process |
| CN104112651B (en) * | 2014-07-03 | 2018-08-14 | 扬州虹扬科技发展有限公司 | A kind of rectifier chip fabrication technique |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20140226 |