CN104112651A - Rectifier chip making process - Google Patents
Rectifier chip making process Download PDFInfo
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- CN104112651A CN104112651A CN201410315792.1A CN201410315792A CN104112651A CN 104112651 A CN104112651 A CN 104112651A CN 201410315792 A CN201410315792 A CN 201410315792A CN 104112651 A CN104112651 A CN 104112651A
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- boron
- silicon chip
- phosphorus source
- diffusion furnace
- phosphorus
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- 238000000034 method Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 50
- 239000011574 phosphorus Substances 0.000 claims abstract description 50
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052796 boron Inorganic materials 0.000 claims abstract description 44
- 238000009792 diffusion process Methods 0.000 claims abstract description 36
- 230000008021 deposition Effects 0.000 claims abstract description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000006396 nitration reaction Methods 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 abstract description 15
- 239000002253 acid Substances 0.000 abstract description 6
- 238000005488 sandblasting Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000007788 liquid Substances 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000009514 concussion Effects 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229940062057 nitrogen 80 % Drugs 0.000 description 2
- 229940063746 oxygen 20 % Drugs 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 238000009666 routine test Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a rectifier chip making process which comprises the following steps: (1) a silicon wafer is put in mixed acid and thinned; (2) cleaning, phosphorus attaching, phosphorus source pre-deposition, phosphorus slicing and sandblasting are sequentially carried out on the silicon wafer obtained from (1); (3) cleaning, boron coating, phosphorus source pushing and oxide layer removing are sequentially carried out on the sandblasted silicon wafer; (4) cleaning, boron coating, boron diffusion and boron slicing are sequentially carried out on the silicon wafer of which the oxide layer removed; and (5) a means of glass passivation is adopted, and chemical nickel plating is performed to complete chip making. A product made by the method of the invention has high stability and high reliability.
Description
Technical field
The present invention relates to high-power semiconductor rectifying device technical field, relate in particular to a kind of rectifier chip fabrication technique.
Background technology
ESD with the plain edition bridge rectifier of current routine tests, under normal air pattern, conventionally can bear about 2KV test, can bear voltage in order to promote test, by analysis, be mainly the chip of rectifier, adopt conventional production method, its performance cannot be born higher ESD test voltage, therefore after assembling, cannot reach client's test request.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of rectifier chip fabrication technique, solves deficiency of the prior art, makes product can bear higher test voltage.
The technical scheme that the present invention solves the problems of the technologies described above is as follows:
A kind of rectifier chip fabrication technique, comprises the following steps:
(1) pack silicon chip into the gaily decorated basket, put into nitration mixture and carry out attenuate; In corrosion process, wave the gaily decorated basket, promote corrosion uniformity, guarantee the consistency of attenuate amount, etching time 10-15s, corrodes and puts into fast three grades of mobile pure water and rinse afterwards, until the residual acid on silicon chip rinses well, more than water resistance value reaches 10 Ω cm;
(2) silicon chip in (1) is cleaned successively, attached phosphorus, phosphorus source pre-deposition, phosphorus burst and sandblast;
When Wafer Cleaning, use respectively and breathe out rub liquid and hot pure water and carry out ultrasonic concussion, breathe out the liquid proportioning of rubbing for breathing out powder: the H that rubs
2o=90g:14400ml, Warm degree: 80 ± 5 DEG C, time 10-20min, then puts into silicon chip HF solution and soak 4-6min, and HF solution ratio is HF:H
2o:H
2o
2=2000:10000:200, Warm degree: 25 ± 10 DEG C, finally to wash by water, circulating water concussion, bath, dry, Wafer Cleaning is complete;
The attached phosphorus of silicon chip, chooses the paper shape phosphorus source that is not less than 70% concentration, is clipped in the middle of 2 silicon chips, comes successively on quartz boat, and entering diffusion furnace after drained carries out phosphorus source pre-deposition;
Phosphorus burst, because of the complete silicon chip of phosphorus source pre-deposition, relative between two, be difficult for separately, need put it in the HF that is not less than 15 DEG C and soak, time 16-24H, after silicon chip separates naturally, washes by water, ultrasonic concussion, bath, guarantees that silicon chip surface is without residual acid;
Sandblast, does not carry out the one side of phosphorus source pre-deposition and carries out sandblast to silicon chip, selecting model is the white fused alumina sand of W40, uses sand-blasting machine to grind silicon chip, and removal amount is at 15-25um.
(3) silicon chip after sandblast is cleaned successively, phosphorus source advances and deoxidation layer again;
Clean in same step (2) and clean, the silicon chip after cleaning, by relative between two the one side of carrying out phosphorus source pre-deposition, the neat quartz boat of putting into, carries out phosphorus source and advances;
Deoxidation layer, carries out sandblast to silicon chip another side, removes surface oxide layer, removal amount 2-5um.
(4) silicon chip after deoxidation layer is cleaned successively, is coated with boron, boron diffusion, boron burst and sandblast;
Clean in same step (2) and clean, silicon chip after cleaning, not attached phosphorus face is coated with to boron, first carry out dosing: the preparation boron oxide of boron water: EGME=100g:400ml, stir 6 ± 2h, after precipitation 6 ± 2h, by solution Filter paper filtering, be coated with the preparation boron water of boron liquid: aluminum nitrate solution: alumina powder=50ml:6ml:0.5g, more than stirring 10min
Not attached silicon chip phosphorus one is faced up to lie in and be coated with on boron sol evenning machine rotating platform, first pressing suction sheet key is adsorbed on silicon chip on rotating platform, make silicon chip start rotation by start key again, use writing brush to dip painting boron liquid (nib 4/5 need immerse and be coated with in boron liquid with upper volume) silicon chip is coated with to boron; Writing brush is from silicon chip, middle mind-set edge is coated with boron, after filling silicon chip, lift pen, machine can stop the rotation automatically, take off on the filter paper that silicon chip is placed in heating plate and dry 9 ± 1min, the sequencing when putting takes off on the filter paper that silicon chip is placed in stainless steel disc, and silicon chip is coated with to boron face and is coated with boron face relative stacking between two, and gently spread a little aluminium powder at attached phosphorus face, boron diffusion is carried out in the last neat preparation on quartz boat of putting into;
Boron burst, puts into the silicon chip after boron diffusion to be not less than the HF of 15 DEG C and to soak, and time 10-18H after silicon chip separates naturally, washes by water, ultrasonic concussion, bath, guarantees that silicon chip surface is without residual acid;
Sandblast, carries out sandblast to silicon chip two sides, and selecting model is the white fused alumina sand of W40, uses sand-blasting machine to grind silicon chip, and attached phosphorus face 1-3um is coated with boron face 5-6um.
On the basis of technique scheme, the present invention can also do following improvement:
Further, the nitration mixture in described step (1) is HF:HNO
3: C
2h
4o
2: H
2sO
4the mixed solution of=9:9:12:4;
Further, phosphorus source pre-deposition in described step (2) is that concentration is after being not less than 70% phosphorus source concentration and being attached on silicon chip, enter temperature and be in the diffusion furnace of 550 DEG C and first carry out the decomposition of phosphorus source, time 1-2h, and then to enter temperature be to carry out pre-deposition in the diffusion furnace of 1200 DEG C, time is 2-4h, and the ratio that passes into gas in described diffusion furnace is nitrogen 92.3%-83.3%, oxygen 7.7%-16.7%;
Further, it is that the diffusion furnace of 1250 DEG C spreads that the phosphorus source of described step (3) advances as silicon chip being put into temperature again, and the time is 10-15h, and the ratio that passes into gas in described diffusion furnace is nitrogen 90.9%-80%, oxygen 9.1%-20%;
Further, described boron is diffused as that to put into temperature be that the diffusion furnace of 1250 DEG C spreads by being coated with silicon chip after boron, and the time is 15-20h, and the ratio that passes into gas is nitrogen 90.9%-80%, oxygen 9.1%-20%.
This technique invention made chip out, is assembled into after bridge rectifier, and aspect ESD electrostatic test, more conventional chip can bear higher voltage, and stability is also better, also higher in client dependability.
The invention has the beneficial effects as follows:
1. by the technology mode of triple diffusion, deepen silicon chip doping content, promote its functional characteristic;
2. have the higher resistance to survey of ESD static, reliability is higher;
3. its power consumption of finished product after assembling is also low compared with conventional products.
Embodiment
Below principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Embodiment 1:
A kind of rectifier chip fabrication technique, comprises the following steps:
(1) silicon chip is put into nitration mixture and carried out attenuate, etching time 10s, corrodes and puts into fast three grades of mobile pure water and rinse afterwards, until the residual acid on silicon chip rinses well, more than water resistance value reaches 10 Ω cm;
(2) silicon chip is used respectively and breathe out rub liquid and hot pure water and carry out ultrasonic concussion and clean, after cleaning, choose the paper shape phosphorus source of 70% concentration, be clipped in the middle of two silicon chips, come successively on quartz boat, after drained, enter diffusion furnace and carry out phosphorus source pre-deposition, then carry out phosphorus burst and sandblast;
(3) silicon chip is cleaned according to cleaning way in step (2), for the silicon chip after cleaning, by relative between two the one side of carrying out phosphorus source pre-deposition, the neat quartz boat of putting into, carrying out phosphorus source advances again, then silicon chip another side is carried out to sandblast, remove surface oxide layer, removal amount is 5um;
(4) first silicon chip is cleaned according to the cleaning way in step (2), configuration is coated with boron liquid, by being coated with boron sol evenning machine, silicon chip is coated with to boron, then carries out boron diffusion and boron burst;
(5) finally in conjunction with the mode of glassivation, through chemical nickel plating, chip completes.
Wherein said nitration mixture is HF:HNO
3: C
2h
4o
2: H
2sO
4the mixed solution of=9:9:12:4;
Phosphorus source pre-deposition in described step (2) is that silicon chip after attached phosphorus is put into temperature is that the diffusion furnace of 550 DEG C first carries out the decomposition of phosphorus source, time 1h, and then to enter temperature be to carry out pre-deposition in the diffusion furnace of 1200 DEG C, time is 2h, the ratio that passes into gas in described diffusion furnace is 92.3%, oxygen 7.7%;
It is that the diffusion furnace of 1250 DEG C spreads that the phosphorus source of described step (3) advances as silicon chip being put into temperature again, and the time is 15h, and the ratio that passes into gas in described diffusion furnace is nitrogen 90.9%, oxygen 9.1%;
Described boron is diffused as that to put into temperature be that the diffusion furnace of 1250 DEG C spreads by being coated with silicon chip after boron, and the time is 15h, and the ratio that passes into gas is nitrogen 90.9%, oxygen 9.1%;
This technique invention made chip out, is assembled into after bridge rectifier, and aspect ESD electrostatic test, more conventional chip can bear higher voltage, and stability is also better, also higher in client dependability.
Embodiment 2:
A kind of rectifier chip fabrication technique, comprises the following steps:
(1) silicon chip is put into nitration mixture and carried out attenuate, etching time 15s, corrodes and puts into fast three grades of mobile pure water and rinse afterwards, until the residual acid on silicon chip rinses well, more than water resistance value reaches 10 Ω cm;
(2) silicon chip is used respectively and breathe out rub liquid and hot pure water and carry out ultrasonic concussion and clean, after cleaning, choose the paper shape phosphorus source of 80% concentration, be clipped in the middle of two silicon chips, come successively on quartz boat, after drained, enter diffusion furnace and carry out phosphorus source pre-deposition, then carry out phosphorus burst and sandblast;
(3) silicon chip is cleaned according to cleaning way in step (2), for the silicon chip after cleaning, by relative between two the one side of carrying out phosphorus source pre-deposition, the neat quartz boat of putting into, carrying out phosphorus source advances again, then silicon chip another side is carried out to sandblast, remove surface oxide layer, removal amount is 5um;
(4) first silicon chip is cleaned according to the cleaning way in step (2), configuration is coated with boron liquid, by being coated with boron sol evenning machine, silicon chip is coated with to boron, then carries out boron diffusion and boron burst;
(5) finally in conjunction with the mode of glassivation, through chemical nickel plating, chip completes.
Wherein said nitration mixture is HF:HNO
3: C
2h
4o
2: H
2sO
4the mixed solution of=9:9:12:4;
Phosphorus source pre-deposition in described step (2) is that silicon chip after attached phosphorus is put into temperature is that the diffusion furnace of 550 DEG C first carries out the decomposition of phosphorus source, time 2h, and then to enter temperature be to carry out pre-deposition in the diffusion furnace of 1200 DEG C, time is 4h, the ratio that passes into gas in described diffusion furnace is nitrogen 83.3%, oxygen 16.7%;
It is that the diffusion furnace of 1250 DEG C spreads that the phosphorus source of described step (3) advances as silicon chip being put into temperature again, and the time is 15h, and the ratio that passes into gas in described diffusion furnace is nitrogen 80%, oxygen 20%;
Described boron is diffused as that to put into temperature be that the diffusion furnace of 1250 DEG C spreads by being coated with silicon chip after boron, and the time is 20h, and the ratio that passes into gas is nitrogen 80%, oxygen 20%;
This technique invention made chip out, is assembled into after bridge rectifier, and aspect ESD electrostatic test, more conventional chip can bear higher voltage, and stability is also better, also higher in client dependability.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. a rectifier chip fabrication technique, is characterized in that, comprises the following steps:
(1) silicon chip is put into nitration mixture and carried out attenuate, remove damage layer;
(2) silicon chip is cleaned successively, attached phosphorus, phosphorus source pre-deposition, phosphorus burst and sandblast;
(3) silicon chip after sandblast is cleaned, is coated with boron successively, phosphorus source advances and deoxidation layer again;
(4) silicon chip after deoxidation layer is cleaned successively, is coated with boron, boron diffusion and boron burst;
(5) finally in conjunction with the mode of glassivation, through chemical nickel plating, chip completes.
2. a kind of rectifier chip fabrication technique according to claim 1, is characterized in that, the nitration mixture in described step (1) is HF:HNO
3: C
2h
4o
2: H
2sO
4the mixed solution of=9:9:12:4.
3. a kind of rectifier chip fabrication technique according to claim 1, it is characterized in that, phosphorus source pre-deposition in described step (2) is that concentration is after being not less than 70% phosphorus source concentration and being attached on silicon chip, enter temperature and be in the diffusion furnace of 550 DEG C and first carry out the decomposition of phosphorus source, time 1-2h, and then to enter temperature be to carry out pre-deposition in the diffusion furnace of 1200 DEG C, the time is 2-4h, in described diffusion furnace, pass in proportion gas: nitrogen 92.3%-83.3%, oxygen 7.7%-16.7%.
4. a kind of rectifier chip fabrication technique according to claim 1, it is characterized in that, it is that the diffusion furnace of 1250 DEG C spreads that the phosphorus source of described step (3) advances as silicon chip being put into temperature again, time is 10-15h, in described diffusion furnace, pass in proportion gas: nitrogen 90.9%-80%, oxygen 9.1%-20%.
5. according to a kind of rectifier chip fabrication technique according to claim 1, it is characterized in that, described boron is diffused as that to put into temperature be that the diffusion furnace of 1250 DEG C spreads by being coated with silicon chip after boron, time is 15-20h, in described diffusion furnace, pass in proportion gas: nitrogen 90.9%-80%, oxygen 9.1%-20%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410315792.1A CN104112651B (en) | 2014-07-03 | 2014-07-03 | A kind of rectifier chip fabrication technique |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410315792.1A CN104112651B (en) | 2014-07-03 | 2014-07-03 | A kind of rectifier chip fabrication technique |
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| Publication Number | Publication Date |
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| CN104112651A true CN104112651A (en) | 2014-10-22 |
| CN104112651B CN104112651B (en) | 2018-08-14 |
Family
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977155A (en) * | 2016-07-01 | 2016-09-28 | 扬州虹扬科技发展有限公司 | Making process of fast recovery chip |
| CN107068561A (en) * | 2017-03-27 | 2017-08-18 | 扬州虹扬科技发展有限公司 | A kind of preparation method of ultralow forward voltage rectifier chip |
| CN109712876A (en) * | 2018-12-30 | 2019-05-03 | 重庆市妙格半导体研究院有限公司 | A kind of PN junction method of diffusion |
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| CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
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| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
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| CN102983072A (en) * | 2012-10-25 | 2013-03-20 | 南通康比电子有限公司 | Diffusion method for low fragment rate diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105977155A (en) * | 2016-07-01 | 2016-09-28 | 扬州虹扬科技发展有限公司 | Making process of fast recovery chip |
| CN105977155B (en) * | 2016-07-01 | 2020-03-20 | 扬州虹扬科技发展有限公司 | Manufacturing process of fast recovery chip |
| CN107068561A (en) * | 2017-03-27 | 2017-08-18 | 扬州虹扬科技发展有限公司 | A kind of preparation method of ultralow forward voltage rectifier chip |
| CN109712876A (en) * | 2018-12-30 | 2019-05-03 | 重庆市妙格半导体研究院有限公司 | A kind of PN junction method of diffusion |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104112651B (en) | 2018-08-14 |
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