WO2016095153A1 - Method for cutting wafer using mechanical cutting tool - Google Patents

Method for cutting wafer using mechanical cutting tool Download PDF

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Publication number
WO2016095153A1
WO2016095153A1 PCT/CN2014/094190 CN2014094190W WO2016095153A1 WO 2016095153 A1 WO2016095153 A1 WO 2016095153A1 CN 2014094190 W CN2014094190 W CN 2014094190W WO 2016095153 A1 WO2016095153 A1 WO 2016095153A1
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Prior art keywords
wafer
cutting
protective film
cut
mechanical cutter
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PCT/CN2014/094190
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French (fr)
Chinese (zh)
Inventor
唐昊
张玮
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浙江中纳晶微电子科技有限公司
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Priority to KR1020167032632A priority Critical patent/KR101947091B1/en
Priority to PCT/CN2014/094190 priority patent/WO2016095153A1/en
Publication of WO2016095153A1 publication Critical patent/WO2016095153A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Definitions

  • the invention relates to the field of microelectronics technology, in particular to a method for cutting a wafer by using a mechanical cutter.
  • the processing of the chip is to first cut the wafer with the functional wafer into individual chips, and then package the chips into semiconductor chips.
  • the wafer cutting process is very important.
  • two methods are generally used for cutting the wafer.
  • One is to use a blade to mechanically cut the wafer.
  • the cost is low, but because of the crystal
  • the circle itself is thin and brittle, so it is very easy to break the wafer, or damage the wafer on the wafer, and after cutting, the wafer will have obvious chipping at the cut, and it is easy to generate dust pollution.
  • Circular cutting is commonly used in another method, that is, laser cutting of wafers. Although this method does not have the above-mentioned disadvantages of mechanical cutting, it is very expensive, and thus is not widely used at present.
  • the technical problem to be solved by the present invention is to overcome the defects of the prior art and provide a method for cutting a wafer by using a mechanical cutter which is low in cost and which is not easily damaged by the wafer and has no dust pollution.
  • the present invention provides a method of cutting a wafer using a mechanical cutter, which comprises the following steps:
  • the cutting protective film is waterproof and can be dissolved by the water-based cleaning liquid, and the cutting protective film is removed by soaking or spraying the water-based cleaning liquid in the step S3.
  • the cut protective film is made of the following weight ratio raw materials:
  • the water-based cleaning solution is made from the following weight ratio raw materials:
  • the cutting protection film is applied to the front surface of the wafer to be cut by liquid coating by spin coating or screen printing, and then the liquid is formed into a film shape attached to the front surface of the wafer by baking.
  • the present invention has the following advantages: the present invention employs a cutting protective film which is well-shielded and can be dissolved by a water-based cleaning solution, is applied to the front surface of the wafer, covers the functional wafer on the wafer, and then performs Wafer cutting, the strength of the wafer is enhanced during cutting, and the cut surface of the wafer is very smooth, and no dust is generated.
  • the wafer is directly immersed in the water-based cleaning liquid or sprayed.
  • the method is to spray a water-based cleaning liquid onto the wafer, and the water-based cleaning liquid dissolves the cutting protective film on the front side of the wafer to obtain a finished wafer-cut product.
  • the above method is much lower than the laser cutting cost, but it does not cause the problem that the wafer originally cut by the mechanical tool is easily broken, and the cutting protective film is used, and the removal is directly carried out by spraying or immersing, which is simple. Convenience does not cause any damage to the wafer on the original wafer.
  • the present invention provides a method of cutting a wafer using a mechanical tool, which includes the following steps:
  • the cutting protective film is waterproof and can be dissolved by the water-based cleaning liquid
  • the cut protective film is made of the following weight ratio raw materials:
  • the heat curing agent is one or more of a curing agent such as a fatty amine, an alicyclic or a polyamide, and the solid filler is a silica nanoparticle, a mica powder, a quartz powder or a silica powder, and the thermal coupling is performed.
  • the silane coupling agent such as KH550, KH560, KH792, DL171 is generally used, and the silica gel is a modified silicone resin, and generally, a modified silicone resin having a siloxane content of 20% to 40% is used.
  • the coating method using the cutting protective film is generally applied by spin coating or screen printing. After coating is completed, it is baked in a hot plate or oven. Bake, baking time is 10 to 30 minutes, baking temperature is 60 to 150 degrees, and then a protective film is formed on the front side of the wafer.
  • S2 The wafer coated with the protective film is placed in a wafer cutter for cutting; when cutting, the cut tool is cut from the front side of the wafer to cut the wafer, including dicing and punching.
  • the cut protective film is removed by soaking the water-based cleaning liquid or spraying the water-based cleaning liquid.
  • the water-based cleaning solution is made from the following weight ratio raw materials:
  • the surfactant is one of an aliphatic sulfonate, an alkyl aryl sulfonate and an alkylnaphthalene sulfonate, which is prepared by using sodium hydroxide or potassium hydroxide, and the stripping agent is used.
  • a salt compound based on an alkaline environment after organosilane modification is a polyether modified silicone quaternary ammonium salt, a polyether modified polysiloxane sulfate salt, and a polyether modified polysiloxane phosphate salt.
  • the cutting protection film is applied to the front surface of the wafer to be cut by liquid coating by spin coating or screen printing, and then the liquid is formed into a film shape attached to the front surface of the wafer by baking.
  • the present invention has the following advantages: the present invention employs a cutting protective film which is well-shielded and can be dissolved by a water-based cleaning solution, is applied to the front surface of the wafer, covers the functional wafer on the wafer, and then performs Wafer cutting, the strength of the wafer is enhanced during cutting, and the cut surface of the wafer is very smooth, and no dust is generated.
  • the wafer is directly immersed in the water-based cleaning liquid or sprayed.
  • the method of spraying a water-based cleaning solution onto the wafer, and the water-based cleaning solution dissolves the cutting protective film on the front side of the wafer. Get the finished wafer cut.
  • Table 1 is one of the examples of cutting the protective film and the test data.
  • the cut protective film is applied to the front side of the wafer by spin coating, and then baked in the oven at a temperature of 65 degrees for 15 minutes.
  • the front side of the circle is formed in a transparent film and attached to the front side of the wafer.
  • To test the waterproof performance soak the following time in hot water soaked at 90 ° C, and measure the weight of the wafer with the protective film before and after immersion to obtain the following data:
  • the weight of the wafer does not change after soaking in hot water at 90 ° C for 20 minutes, which means that the cut protective film is insoluble in water.
  • Table 2 shows the second embodiment of the protective film and the test data.
  • the cut protective film is applied to the front side of the wafer by spin coating, and then baked in the oven for 10 minutes at a temperature of 100 degrees to form a transparent film on the front side of the wafer. Attached to the front of the wafer. To test the waterproof performance, soak the following time in hot water soaked at 90 ° C, and measure the weight of the wafer with the protective film before and after immersion to obtain the following data:
  • the weight of the wafer does not change, which means that the cutting protective film is insoluble in water, has good waterproof performance, and can cope with the requirements of water-cooling cooling of the mechanical cutting blade during the wafer cutting process.
  • One of the formulations of water-based cleaning fluids is:
  • the cutting protective film can be completely cleaned by immersion cleaning.
  • the cleaning film can be completely cleaned by the spray cleaning.
  • the second formula of water-based cleaning solution is:
  • the cutting protective film can be completely cleaned by immersion cleaning.
  • the cleaning film can be completely cleaned by the spray cleaning.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

Disclosed is a method for cutting a wafer using a mechanical cutting tool, comprising the following steps: 1. coating a layer of cutting protection film on a front surface of a wafer to be cut; 2. putting the wafer coated with the cutting protection film into a wafer cutting machine so as to cut the wafer by using the mechanical cutting tool; and 3. removing the cutting protection film by soaking or spraying after the wafer is cut. Compared with laser cutting, the cost of using the above-mentioned method is significantly lowered, and the original problem that a wafer can be easily damaged if cut by a mechanical cutting tool is likewise avoided. Moreover, when using such cutting protection film, the film can be removed by means of a direct spraying or soaking, which is simple and convenient and will cause no damage to chips on the original wafer.

Description

采用机械刀具切割晶圆的方法Method of cutting a wafer using a mechanical cutter 技术领域Technical field
本发明涉及微电子技术领域，具体讲是一种采用机械刀具切割晶圆的方法。The invention relates to the field of microelectronics technology, in particular to a method for cutting a wafer by using a mechanical cutter.
背景技术Background technique
目前，芯片的加工过程是，先将带有功能晶片的晶圆切切割成一个个芯片，然后再将这些芯片进行封装成半导体芯片。其中晶圆的切割过程非常重要，现有技术中一般采用两种方法对晶圆进行切割，一种是采用刀片，通过机械的方式来切割晶圆，采用这种方式，成本低，但是由于晶圆本身较薄而且脆，因此非常容易使晶圆破损，或者使晶圆上的晶片破损，而且切割之后，晶圆的切割处也会有明显的崩边，也容易产生粉尘污染，因此目前晶圆切割常用另一种方法，也就是激光切割晶圆，这种方法虽然没有机械切割的上述缺点，但是它成本非常昂贵，因此目前应用也不广。At present, the processing of the chip is to first cut the wafer with the functional wafer into individual chips, and then package the chips into semiconductor chips. Among them, the wafer cutting process is very important. In the prior art, two methods are generally used for cutting the wafer. One is to use a blade to mechanically cut the wafer. In this way, the cost is low, but because of the crystal The circle itself is thin and brittle, so it is very easy to break the wafer, or damage the wafer on the wafer, and after cutting, the wafer will have obvious chipping at the cut, and it is easy to generate dust pollution. Circular cutting is commonly used in another method, that is, laser cutting of wafers. Although this method does not have the above-mentioned disadvantages of mechanical cutting, it is very expensive, and thus is not widely used at present.
发明内容Summary of the invention
本发明所要解决的技术问题是，克服了现有技术的缺陷，提供了一种成本较低，而且晶圆不易破损，没有粉尘污染的采用机械刀具切割晶圆的方法。The technical problem to be solved by the present invention is to overcome the defects of the prior art and provide a method for cutting a wafer by using a mechanical cutter which is low in cost and which is not easily damaged by the wafer and has no dust pollution.
为解决上述技术问题，本发明提出一种采用机械刀具切割晶圆的方法，它包括以下步骤：In order to solve the above technical problems, the present invention provides a method of cutting a wafer using a mechanical cutter, which comprises the following steps:
S1、在待切割的晶圆的正面涂覆一层切割保护膜；S1, applying a cutting protective film on the front surface of the wafer to be cut;
S2、将涂覆有切割保护膜的晶圆放入晶圆切割机中利用机械刀具来切割；S2, inserting a wafer coated with a protective film into a wafer cutting machine and cutting with a mechanical cutter;
S3、将切割后的晶圆通过浸泡或者喷淋的方式去除切割保护膜。S3. Removing the cut protective film by immersing or spraying the cut wafer.
所述切割保护膜防水而且可被水基清洗液溶解，所述步骤S3中采用浸泡或者喷淋水基清洗液的方式去除切割保护膜。The cutting protective film is waterproof and can be dissolved by the water-based cleaning liquid, and the cutting protective film is removed by soaking or spraying the water-based cleaning liquid in the step S3.
所述切割保护膜由以下重量配比的原料制成：The cut protective film is made of the following weight ratio raw materials:
Figure PCTCN2014094190-appb-000001
Figure PCTCN2014094190-appb-000001
上述原料的重量百分比之和等于100％。The sum of the weight percentages of the above materials is equal to 100%.
所述水基清洗液由以下重量配比的原料制成：The water-based cleaning solution is made from the following weight ratio raw materials:
Figure PCTCN2014094190-appb-000002
Figure PCTCN2014094190-appb-000002
上述原料的重量百分比之和等于100％。The sum of the weight percentages of the above materials is equal to 100%.
所述切割保护膜采用液体通过旋涂或者丝网印刷的方法涂覆到待切割的晶圆的正面，然后通过烘烤的方式使液体形成膜状附在晶圆的正面。The cutting protection film is applied to the front surface of the wafer to be cut by liquid coating by spin coating or screen printing, and then the liquid is formed into a film shape attached to the front surface of the wafer by baking.
采用上述方法后，本发明具有以下优点：本发明采用一种隔水性良好而且可被水基清洗液溶解的切割保护膜涂敷到晶圆的正面，盖住晶圆上的功能晶片，然后进行晶圆切割，使切割时晶圆的强度得到加强，而且切割后的晶圆的切面非常光滑，而且不会产生粉尘，在切割后，直接将晶圆浸泡在水基清洗液中或者通过喷淋的方法向晶圆喷淋水基清洗液，水基清洗液将晶圆正面的切割保护膜溶解，得到晶圆切割的成品。采用上述方法比激光切割成本要大大降低，但是也不会产生原来采用机械刀具切割的晶圆容易破损的问题，而且采用这种切割保护膜，去除时直接采用喷淋或者浸泡的方式去除，简单方便，也不会对原始的晶圆上的晶片造成任何损伤。After the above method, the present invention has the following advantages: the present invention employs a cutting protective film which is well-shielded and can be dissolved by a water-based cleaning solution, is applied to the front surface of the wafer, covers the functional wafer on the wafer, and then performs Wafer cutting, the strength of the wafer is enhanced during cutting, and the cut surface of the wafer is very smooth, and no dust is generated. After cutting, the wafer is directly immersed in the water-based cleaning liquid or sprayed. The method is to spray a water-based cleaning liquid onto the wafer, and the water-based cleaning liquid dissolves the cutting protective film on the front side of the wafer to obtain a finished wafer-cut product. The above method is much lower than the laser cutting cost, but it does not cause the problem that the wafer originally cut by the mechanical tool is easily broken, and the cutting protective film is used, and the removal is directly carried out by spraying or immersing, which is simple. Convenience does not cause any damage to the wafer on the original wafer.
具体实施方式detailed description
下面结合具体实施方式对本发明作进一步详细的说明：The present invention will be further described in detail below in conjunction with specific embodiments:
本发明提供一种采用机械刀具切割晶圆的方法，它包括以下步骤：The present invention provides a method of cutting a wafer using a mechanical tool, which includes the following steps:
S1、在待切割的晶圆的正面涂覆一层切割保护膜，所述切割保护膜防水而且可被水基清洗液溶解；S1, coating a front surface of the wafer to be cut with a cutting protective film, the cutting protective film is waterproof and can be dissolved by the water-based cleaning liquid;
所述切割保护膜由以下重量配比的原料制成：The cut protective film is made of the following weight ratio raw materials:
Figure PCTCN2014094190-appb-000003
Figure PCTCN2014094190-appb-000003
上述原料的重量百分比之和等于100％。 The sum of the weight percentages of the above materials is equal to 100%.
所述热固化剂采用脂肪胺、脂环映或聚酰胺等固化剂的一种或者多种，所述固体填充料采用二氧化硅纳米颗粒、云母粉、石英粉或者硅石粉，所述热耦合剂一般采用硅烷类偶联剂如KH550，KH560，KH792，DL171，所述的硅胶为改性后的硅树脂，一般＝采用硅氧烷含量为20％-40％的改性硅树脂。涂敷到晶圆上时透明性好，而且防水，采用这种切割保护膜的涂敷方法一般采用旋涂或者丝网印刷的涂敷方式，涂敷完成之后，再在热板或者烘箱内烘烤，烘烤时间为10～30分钟，烘烤温度为60～150度，然后在晶圆的正面就形成一层切割保护膜。The heat curing agent is one or more of a curing agent such as a fatty amine, an alicyclic or a polyamide, and the solid filler is a silica nanoparticle, a mica powder, a quartz powder or a silica powder, and the thermal coupling is performed. The silane coupling agent such as KH550, KH560, KH792, DL171 is generally used, and the silica gel is a modified silicone resin, and generally, a modified silicone resin having a siloxane content of 20% to 40% is used. When applied to a wafer, it has good transparency and is waterproof. The coating method using the cutting protective film is generally applied by spin coating or screen printing. After coating is completed, it is baked in a hot plate or oven. Bake, baking time is 10 to 30 minutes, baking temperature is 60 to 150 degrees, and then a protective film is formed on the front side of the wafer.
S2、将涂覆有切割保护膜的晶圆放入晶圆切割机中进行切割；切割时，切割的刀具从晶圆的正面切下，对晶圆进行切割，包括切丁和打孔。S2: The wafer coated with the protective film is placed in a wafer cutter for cutting; when cutting, the cut tool is cut from the front side of the wafer to cut the wafer, including dicing and punching.
S3、将切割后的晶圆通过浸泡水基清洗液或者喷淋水基清洗液的方式去除切割保护膜。S3. The cut protective film is removed by soaking the water-based cleaning liquid or spraying the water-based cleaning liquid.
所述水基清洗液由以下重量配比的原料制成：The water-based cleaning solution is made from the following weight ratio raw materials:
Figure PCTCN2014094190-appb-000004
Figure PCTCN2014094190-appb-000004
上述原料的重量百分比之和等于100％。The sum of the weight percentages of the above materials is equal to 100%.
所述表面活性剂采用脂肪族磺酸化物、烷基芳基磺酸化物和烷基萘磺酸化物其中的一种，所述碱液采用氢氧化钠或者氢氧化钾制备，所述剥离剂采用有机硅烷改性后基于碱性环境的盐类化合物。所述有机硅烷改性后基于碱性环境的盐类化合物采用聚醚改性有机硅季铵盐、聚醚改性聚硅氧烷硫酸酯盐、聚醚改性聚硅氧烷磷酸酯盐中的一种或几种。The surfactant is one of an aliphatic sulfonate, an alkyl aryl sulfonate and an alkylnaphthalene sulfonate, which is prepared by using sodium hydroxide or potassium hydroxide, and the stripping agent is used. A salt compound based on an alkaline environment after organosilane modification. The organosilane-modified salt compound based on an alkaline environment is a polyether modified silicone quaternary ammonium salt, a polyether modified polysiloxane sulfate salt, and a polyether modified polysiloxane phosphate salt. One or several.
所述切割保护膜采用液体通过旋涂或者丝网印刷的方法涂覆到待切割的晶圆的正面，然后通过烘烤的方式使液体形成膜状附在晶圆的正面。The cutting protection film is applied to the front surface of the wafer to be cut by liquid coating by spin coating or screen printing, and then the liquid is formed into a film shape attached to the front surface of the wafer by baking.
采用上述方法后，本发明具有以下优点：本发明采用一种隔水性良好而且可被水基清洗液溶解的切割保护膜涂敷到晶圆的正面，盖住晶圆上的功能晶片，然后进行晶圆切割，使切割时晶圆的强度得到加强，而且切割后的晶圆的切面非常光滑，而且不会产生粉尘，在切割后，直接将晶圆浸泡在水基清洗液中或者通过喷淋的方法向晶圆喷淋水基清洗液，水基清洗液将晶圆正面的切割保护膜溶解， 得到晶圆切割的成品。After the above method, the present invention has the following advantages: the present invention employs a cutting protective film which is well-shielded and can be dissolved by a water-based cleaning solution, is applied to the front surface of the wafer, covers the functional wafer on the wafer, and then performs Wafer cutting, the strength of the wafer is enhanced during cutting, and the cut surface of the wafer is very smooth, and no dust is generated. After cutting, the wafer is directly immersed in the water-based cleaning liquid or sprayed. The method of spraying a water-based cleaning solution onto the wafer, and the water-based cleaning solution dissolves the cutting protective film on the front side of the wafer. Get the finished wafer cut.
下面结合试验数据来说明：表1为切割保护膜的实施例之一及检测数据，切割保护膜采用旋涂涂敷到晶圆正面，然后在烘箱内通过65度的温度烘烤15分钟在晶圆正面形成透明膜状贴附到晶圆正面。测试防水性能，在浸泡90℃的热水里分别浸泡以下时间，检测浸泡前和浸泡后的带有切割保护膜的晶圆的重量得到数据如下：The following is combined with the test data: Table 1 is one of the examples of cutting the protective film and the test data. The cut protective film is applied to the front side of the wafer by spin coating, and then baked in the oven at a temperature of 65 degrees for 15 minutes. The front side of the circle is formed in a transparent film and attached to the front side of the wafer. To test the waterproof performance, soak the following time in hot water soaked at 90 ° C, and measure the weight of the wafer with the protective film before and after immersion to obtain the following data:
表1Table 1
Figure PCTCN2014094190-appb-000005
Figure PCTCN2014094190-appb-000005
可以看出，在90℃热水浸泡20分钟后，晶圆的重量没有发生变化，是指切割保护膜不溶于水。It can be seen that the weight of the wafer does not change after soaking in hot water at 90 ° C for 20 minutes, which means that the cut protective film is insoluble in water.
表2为切割保护膜的实施例之二及检测数据，切割保护膜采用旋涂涂敷到晶圆正面，然后在烘箱内通过100度的温度烘烤10分钟在晶圆正面形成透明膜状贴附到晶圆正面。测试防水性能，在浸泡90℃的热水里分别浸泡以下时间，检测浸泡前和浸泡后的带有切割保护膜的晶圆的重量得到数据如下：Table 2 shows the second embodiment of the protective film and the test data. The cut protective film is applied to the front side of the wafer by spin coating, and then baked in the oven for 10 minutes at a temperature of 100 degrees to form a transparent film on the front side of the wafer. Attached to the front of the wafer. To test the waterproof performance, soak the following time in hot water soaked at 90 ° C, and measure the weight of the wafer with the protective film before and after immersion to obtain the following data:
表2Table 2
Figure PCTCN2014094190-appb-000006
Figure PCTCN2014094190-appb-000006
Figure PCTCN2014094190-appb-000007
Figure PCTCN2014094190-appb-000007
水浸泡20分钟后，晶圆的重量没有发生变化，是指切割保护膜不溶于水，防水性能好，可以应对在晶圆切割过程中对机械切割刀片进行淋水冷却等要求。After water immersion for 20 minutes, the weight of the wafer does not change, which means that the cutting protective film is insoluble in water, has good waterproof performance, and can cope with the requirements of water-cooling cooling of the mechanical cutting blade during the wafer cutting process.
水基清洗液的配方之一为：One of the formulations of water-based cleaning fluids is:
Figure PCTCN2014094190-appb-000008
Figure PCTCN2014094190-appb-000008
经测试对切割保护膜实施例之一，采用浸泡清洗，可以完全清洗掉切割保护膜，对切割保护膜实施例之二，采用喷淋清洗，可以完全清洗掉切割保护膜。One of the embodiments for cutting the protective film is tested, and the cutting protective film can be completely cleaned by immersion cleaning. For the second embodiment of the cutting protective film, the cleaning film can be completely cleaned by the spray cleaning.
水基清洗液的配方之二为：The second formula of water-based cleaning solution is:
Figure PCTCN2014094190-appb-000009
Figure PCTCN2014094190-appb-000009
经测试对切割保护膜实施例之一，采用浸泡清洗，可以完全清洗掉切割保护膜，对切割保护膜实施例之二，采用喷淋清洗，可以完全清洗掉切割保护膜。 One of the embodiments for cutting the protective film is tested, and the cutting protective film can be completely cleaned by immersion cleaning. For the second embodiment of the cutting protective film, the cleaning film can be completely cleaned by the spray cleaning.

Claims (8)

  1. 一种采用机械刀具切割晶圆的方法，其特征在于：它包括以下步骤：A method of cutting a wafer using a mechanical tool, characterized in that it comprises the following steps:
    S1、在待切割的晶圆的正面涂覆一层切割保护膜；S1, applying a cutting protective film on the front surface of the wafer to be cut;
    S2、将涂覆有切割保护膜的晶圆放入晶圆切割机中利用机械刀具来切割；S2, inserting a wafer coated with a protective film into a wafer cutting machine and cutting with a mechanical cutter;
    S3、将切割后的晶圆通过浸泡或者喷淋的方式去除切割保护膜。S3. Removing the cut protective film by immersing or spraying the cut wafer.
  2. 根据权利要求1所述的采用机械刀具切割晶圆的方法，其特征在于：所述切割保护膜防水而且可被水基清洗液溶解，所述步骤S3中采用浸泡或者喷淋水基清洗液的方式去除切割保护膜。The method of cutting a wafer by using a mechanical cutter according to claim 1, wherein the cutting protective film is waterproof and can be dissolved by a water-based cleaning liquid, and the step S3 is performed by using a soaking or spraying water-based cleaning liquid. The cutting protective film is removed in a manner.
  3. 根据权利要求2所述的采用机械刀具切割晶圆的方法，其特征在于：所述切割保护膜由以下重量配比的原料制成：The method of cutting a wafer using a mechanical cutter according to claim 2, wherein the cut protective film is made of the following weight ratio raw materials:
    Figure PCTCN2014094190-appb-100001
    Figure PCTCN2014094190-appb-100001
    上述原料的重量百分比之和等于100％，The sum of the weight percentages of the above raw materials is equal to 100%,
  4. 根据权利要求3所述的采用机械刀具切割晶圆的方法，其特征在于：所述热固化剂采用脂肪胺、脂环映或聚酰胺等固化剂的一种或者多种，所述固体填充料采用二氧化硅纳米颗粒、云母粉、石英粉或者硅石粉，所述热耦合剂采用硅烷偶联剂，所述的硅胶采用硅氧烷含量为20％-40％的改性硅树脂。The method of cutting a wafer by using a mechanical cutter according to claim 3, wherein the heat curing agent is one or more of a curing agent such as a fatty amine, an alicyclic or a polyamide, and the solid filler is used. Silica nanoparticles, mica powder, quartz powder or silica powder are used, the thermal coupling agent is a silane coupling agent, and the silica gel is a modified silicone resin having a siloxane content of 20% to 40%.
  5. 根据权利要求2所述的采用机械刀具切割晶圆的方法，其特征在于：所述水基清洗液由以下重量配比的原料制成：The method of cutting a wafer using a mechanical cutter according to claim 2, wherein the water-based cleaning liquid is made of the following raw materials by weight ratio:
    Figure PCTCN2014094190-appb-100002
    Figure PCTCN2014094190-appb-100002
    上述原料的重量百分比之和等于100％。The sum of the weight percentages of the above materials is equal to 100%.
  6. 根据权利要求5所述的采用机械刀具切割晶圆的方法，其特征在于：所述表面活性剂采用脂肪族磺酸化物、烷基芳基磺酸化物和烷基萘磺酸化物其中的一 种，所述碱液采用氢氧化钠或者氢氧化钾制备，所述剥离剂采用有机硅烷改性后基于碱性环境的盐类化合物。The method of cutting a wafer using a mechanical cutter according to claim 5, wherein the surfactant is one of an aliphatic sulfonate, an alkyl aryl sulfonate and an alkylnaphthalene sulfonate. The lye is prepared by using sodium hydroxide or potassium hydroxide, and the stripping agent is a salt compound based on an alkaline environment after modification with an organosilane.
  7. 根据权利要求6所述的采用机械刀具切割晶圆的方法，其特征在于：所述有机硅烷改性后基于碱性环境的盐类化合物采用聚醚改性有机硅季铵盐、聚醚改性聚硅氧烷硫酸酯盐、聚醚改性聚硅氧烷磷酸酯盐中的一种或几种。The method for cutting a wafer by using a mechanical cutter according to claim 6, wherein the organosilane-modified salt compound based on an alkaline environment is modified with a polyether-modified silicone quaternary ammonium salt and a polyether. One or more of a polysiloxane sulfate salt or a polyether modified polysiloxane phosphate salt.
  8. 根据权利要求1所述的采用机械刀具切割晶圆的方法，其特征在于：所述切割保护膜采用液体通过旋涂或者丝网印刷的方法涂覆到待切割的晶圆的正面，然后通过烘烤的方式使液体形成膜状附在晶圆的正面。 The method of cutting a wafer by using a mechanical cutter according to claim 1, wherein the cutting protective film is applied to the front surface of the wafer to be cut by spin coating or screen printing, and then dried. The way of baking causes the liquid to form a film attached to the front side of the wafer.
PCT/CN2014/094190 2014-12-18 2014-12-18 Method for cutting wafer using mechanical cutting tool WO2016095153A1 (en)

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