CN106391567A - Method for removing acid corrosion blackspots from monocrystalline silicon wafers - Google Patents
Method for removing acid corrosion blackspots from monocrystalline silicon wafers Download PDFInfo
- Publication number
- CN106391567A CN106391567A CN201610939971.1A CN201610939971A CN106391567A CN 106391567 A CN106391567 A CN 106391567A CN 201610939971 A CN201610939971 A CN 201610939971A CN 106391567 A CN106391567 A CN 106391567A
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- CN
- China
- Prior art keywords
- acid corrosion
- monocrystalline silicon
- silicon wafers
- blackspots
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
Abstract
The invention discloses a method for removing acid corrosion blackspots from monocrystalline silicon wafers. After being subjected to acid corrosion, the monocrystalline silicon wafers are soaked in an aqueous solution prepared from aqueous ammonia, hydrogen peroxide and deionized water and are subjected to ultrasonic cleaning, so that the blackspots on the surfaces of the silicon wafers are removed. The ratio of the aqueous ammonia to the hydrogen peroxide to the deionized water in the aqueous solution is 1:1:(5-20). The temperature of the aqueous solution is 50-70 DEG C. The time for ultrasonic cleaning is 5-30 min. According to the method, operation is easy, environment friendliness is achieved, and the blackspots generated on the surfaces and edges of the silicon wafers due to acid corrosion can be effectively removed. According to the method, the requirement for the time when the silicon wafers are transferred from acid liquor into water is lowered, and the tedious work for designing special clamps for silicon wafer acid corrosion is avoided. The method is simple and feasible, and can be widely applied to the field of silicon wafer acid corrosion.
Description
Technical field
The present invention relates to semi-conducting material process technology, more particularly to a kind of side removing monocrystalline silicon piece acid corrosion spot
Method.
Background technology
Monocrystalline silicon piece acid corrosion is a kind of technique being widely used in semiconductor silicon material processing, and it is primarily to remove
Surface damage layer after cutting, grinding for the silicon chip, improves silicon chip surface quality, discharges stress, be that silicon wafer polishing is prepared.Silicon
Piece acid corrosion typically adopts nitric acid, hydrofluoric acid, the mixed liquor of glacial acetic acid as corrosive liquid.After acid corrosion, some resistance
The relatively low silicon chip edge of rate and surface are also easy to produce spot, cause silicon slice corrosion unqualified.For avoiding corroding the generation of spot, typically
During requiring acid corrosion, the time that silicon chip is transferred to water from acid solution is less than 0.6s, to avoid nitric acid further to silicon chip
Oxidation, but this method is confidential to acid corrosion asks higher, and it is difficult to ensure that the silicon chip of all conduction types, resistivity does not all produce
Spot.Further, it is also possible to avoid spot to produce by way of changing acid corrosion fixture, but this mode workload is larger,
Jig Design difficulty is big, and the cycle is long.Therefore, in order to remove the spot after silicon chip acid corrosion, silicon chip sour yield rate, exploitation are improved
A kind of method removing silicon chip acid corrosion spot seems very necessary.
Content of the invention
In view of prior art situation, for the production needs of silicon chip acid corrosion, the present invention provides a kind of simple and environmentally-friendly, easy
Method in the removal monocrystalline silicon piece acid corrosion spot of operation.
The present invention adopts the technical scheme that：A kind of method removing monocrystalline silicon piece acid corrosion spot, is characterized in that：In list
Crystal silicon chip, after acid corrosion, in the aqueous solution that immersion is prepared by ammoniacal liquor, hydrogen peroxide and deionized water, is cleaned by ultrasonic,
To remove silicon chip surface spot.
Ammonia In Aqueous Solution water of the present invention, hydrogen peroxide, the ratio of deionized water are 1:1:(5-20).
Aqueous temperature of the present invention is 50-70 DEG C.
The ultrasonic cleaning time of the present invention is 5-30 min.
The present invention has the advantage that with beneficial effect is：Easily operated, environmental protection, can effectively remove silicon chip acid corrosion and produce
Raw surface and edge spot.This method relaxes the requirement of the time transferred to from acid solution water for silicon chip, and avoids
The tedious work of design silicon chip acid corrosion special fixture.This method is simple, can obtain extensively should in silicon chip sour field
With.
Specific embodiment
The invention will be further described with reference to embodiments：
Embodiment：Silicon chip doping type, crystal orientation are N<111>P-doped, resistivity is 0.008-0.010 Ω.Acid corrosion temperature
Spend for 21 DEG C, etching time is 32 s, nitration mixture ratio is nitric acid：Hydrofluoric acid：Glacial acetic acid=5:2:2.After sour silicon chip surface and
Marginal existence yellow spot.
After acid corrosion, monocrystalline silicon piece is put into ammoniacal liquor, hydrogen peroxide mixed solution are ultrasonic, water-soluble liquid proportional is ammoniacal liquor：Double
Oxygen water：Deionized water=1:1:10, aqueous temperature is 60 DEG C, and process time is 10 min（Process time can be according to spot weight
Set）.After process, the spot at silicon chip surface and edge removes completely.
Carry out thickness measuring to using ammoniacal liquor, hydrogen peroxide mixed solution before processing and the silicon chip after process, surveyed using electric capacity
Thick instrument thickness measuring, data such as table 1 below.From table 1 it follows that the basic indifference of silicon wafer thickness after before processing and process.
Table 1
| Before processing thickness/μm | Thickness after process/μm |
| 241.3 | 241.6 |
| 240.9 | 240.4 |
| 239.9 | 239.6 |
| 241.6 | 241.5 |
| 240.7 | 240.2 |
Carry out surface roughness test to using ammoniacal liquor, hydrogen peroxide mixed solution before processing and the silicon chip after process, using hand-held
Formula roughness tester is tested, data such as table 2 below.Although from table 2 it can be seen that silicon chip roughness compares before processing slightly after processing
There is increase, but still within the scope of acid corrosion silicon chip surface roughness requirements.
Table 2
| Before processing roughness/μm | Roughness after process/μm |
| 0.256 | 0.279 |
| 0.262 | 0.292 |
| 0.259 | 0.290 |
| 0.261 | 0.283 |
| 0.263 | 0.291 |
Conclusion：Surface spot after monocrystalline acid corrosion can effectively be removed using this method, its surface uniformly, and does not interfere with silicon chip thickness
Degree.
Claims (4)
1. a kind of method removing monocrystalline silicon piece acid corrosion spot, is characterized in that：In monocrystalline silicon piece after acid corrosion, immersion
In the aqueous solution prepared by ammoniacal liquor, hydrogen peroxide and deionized water, it is cleaned by ultrasonic, to remove silicon chip surface spot.
2. a kind of method removing monocrystalline silicon piece acid corrosion spot according to claim 1, is characterized in that：The described aqueous solution
Middle ammoniacal liquor, hydrogen peroxide, the ratio of deionized water are 1:1:(5-20).
3. a kind of method removing monocrystalline silicon piece acid corrosion spot according to claim 2, is characterized in that：The described aqueous solution
Temperature is 50-70 DEG C.
4. a kind of method removing monocrystalline silicon piece acid corrosion spot according to claim 1, is characterized in that：Described ultrasonic clear
Time of washing is 5-30 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610939971.1A CN106391567A (en) | 2016-11-02 | 2016-11-02 | Method for removing acid corrosion blackspots from monocrystalline silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610939971.1A CN106391567A (en) | 2016-11-02 | 2016-11-02 | Method for removing acid corrosion blackspots from monocrystalline silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106391567A true CN106391567A (en) | 2017-02-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610939971.1A Pending CN106391567A (en) | 2016-11-02 | 2016-11-02 | Method for removing acid corrosion blackspots from monocrystalline silicon wafers |
Country Status (1)
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| CN (1) | CN106391567A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107818913A (en) * | 2017-11-03 | 2018-03-20 | 通威太阳能（安徽）有限公司 | A kind of processing method after silicon chip RIE making herbs into wool |
Citations (6)
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| CN1933110A (en) * | 2006-10-13 | 2007-03-21 | 鞍山市华辰电力器件有限公司 | Method for III family elements two-time spreading and raising large power transistor blocking current-voltage characteristics |
| CN102368468A (en) * | 2011-10-17 | 2012-03-07 | 浙江贝盛光伏股份有限公司 | Precleaning process of silicon wafer |
| US20120073648A1 (en) * | 2010-09-24 | 2012-03-29 | Andrew Clark | Photovoltaic conversion using rare earths plus Group IV Sensitizers |
| CN102642807A (en) * | 2012-05-09 | 2012-08-22 | 中国科学院合肥物质科学研究院 | Preparation method of ordered silicon nanowire array |
| CN102723388A (en) * | 2012-06-20 | 2012-10-10 | 上海洪立新能源科技有限公司 | Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof |
| US20130020278A1 (en) * | 2010-03-22 | 2013-01-24 | Unist Academy-Industry Research Corporation | Block copolymer for manufacturing nanowire and method for manufacturing thereof |
-
2016
- 2016-11-02 CN CN201610939971.1A patent/CN106391567A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933110A (en) * | 2006-10-13 | 2007-03-21 | 鞍山市华辰电力器件有限公司 | Method for III family elements two-time spreading and raising large power transistor blocking current-voltage characteristics |
| US20130020278A1 (en) * | 2010-03-22 | 2013-01-24 | Unist Academy-Industry Research Corporation | Block copolymer for manufacturing nanowire and method for manufacturing thereof |
| US20120073648A1 (en) * | 2010-09-24 | 2012-03-29 | Andrew Clark | Photovoltaic conversion using rare earths plus Group IV Sensitizers |
| CN102368468A (en) * | 2011-10-17 | 2012-03-07 | 浙江贝盛光伏股份有限公司 | Precleaning process of silicon wafer |
| CN102642807A (en) * | 2012-05-09 | 2012-08-22 | 中国科学院合肥物质科学研究院 | Preparation method of ordered silicon nanowire array |
| CN102723388A (en) * | 2012-06-20 | 2012-10-10 | 上海洪立新能源科技有限公司 | Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof |
Non-Patent Citations (1)
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| 刘颂豪等: "《光子学技术与应用 下册》", 30 September 2006, 广东科技出版社 * |
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| CN107818913A (en) * | 2017-11-03 | 2018-03-20 | 通威太阳能（安徽）有限公司 | A kind of processing method after silicon chip RIE making herbs into wool |
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Application publication date: 20170215 |