CN103480598B - Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment - Google Patents
Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment Download PDFInfo
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- CN103480598B CN103480598B CN201210197214.3A CN201210197214A CN103480598B CN 103480598 B CN103480598 B CN 103480598B CN 201210197214 A CN201210197214 A CN 201210197214A CN 103480598 B CN103480598 B CN 103480598B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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Abstract
The invention provides a silicon wafer cleaning method for preparing a high-efficiency solar cell and cleaning equipment. The surface hydrophobicity of a textured silicon wafer is poorer due to the fact that the proportion by weight of sulfuric acid to hydrogen peroxide is lower in the existing silicon wafer cleaning technology. The silicon wafer cleaning method for preparing the high-efficiency solar cell comprises the following steps of firstly cleaning the silicon wafer by mixed solution of concentrated sulfuric acid and hydrogen peroxide solution by adopting the cleaning equipment, wherein the proportion by weight of the sulfuric acid to the hydrogen peroxide is (65-170):1, then, cleaning by deionized water, then, cleaning the silicon wafer by the hydrogen peroxide solution or salpeter solution so as to remove carbon residues and part of metallics and form a layer of oxidation film, cleaning by the deionized water, and finally, removing the oxidation film on the silicon wafer by the mixed solution of hydrochloric acid and hydrofluoric acid, and cleaning by the deionized water. According to the silicon wafer cleaning method for preparing the high-efficiency solar cell and the cleaning equipment provided by the invention, the hydrophobicity of the silicon wafer can be effectively improved, i.e. the cleaned silicon wafer is completely dehydrated after the oxidation film on the silicon wafer is removed.
Description
Technical field
The present invention relates to solar cell manufactures field, particularly to a kind of Wafer Cleaning for preparing efficient solar battery
Method and cleaning equipment.
Background technology
For efficient solar battery, the surface treatment of silicon chip is very crucial, and the cleaning of early stage can remove silicon chip table
The organic impuritiess in face and metallic introduce in the high-temperature technologies such as the diffusion in later stage, oxidation, activation such that it is able to be prevented effectively from
Impurity or defect.
In integrated circuit (Integrated Circuit；Abbreviation IC) in industry, traditional RCA cleaning method is although have
Splendid cleaning performance, but there are the problems such as program is numerous and diverse, process window is little, solution usage cycles are short in the method.Furthermore
When solar energy industry is with RCA cleaning method cleaning silicon chip, its SC-1 solution because have corrosiveness in alkalescence to silicon chip,
Lead to square resistance controllability in cell piece cleaning after the diffusion very poor (square resistance rising).Thus for solar energy industry
For, RCA ablution is not preferable cleaning method.
Also there is a kind of wide variety of cleaning method SPM ablution in IC industry, it adopts concentrated sulphuric acid and hydrogen peroxide
The mass percent of the mixed solution of solution, wherein sulphuric acid and hydrogen peroxide is 15～30: 1, the purpose master of hydrogenperoxide steam generator
If decompose producing bubble, strengthen roguing effect, add every time a small amount of (hundreds of mL percent concentration be 30% hydrogen peroxide molten
Liquid stock solution).This mixed solution can highly desirable remove the Organic substance on wafer (silicon chip) surface under conditions of heating
With part metals impurity.But existing SPM cleaning method is primarily directed to the wafer of semicon industry and designs, due to wafer
Surface is through polishing, very smooth, so not depositing the problem being dehydrated after cleaning.But because solar energy industry is making too
During positive electricity pond, it is all generally first to make matte (go to damage layer, increase light absorbs), if directly applying mechanically the SPM cleaning of IC industry
Method, can lead to silicon chip surface hydrophobicity poor, surface and hang water or have the phenomenons such as obvious washmarking trace, thus not reaching
Purpose except impurities on surface of silicon chip.
Therefore, a kind of silicon wafer cleaning method for preparing efficient solar battery and equipment how are provided to solve to adopt
The surface hydrophobicity sex chromosome mosaicism of matte silicon chip during SPM ablution cleaning silicon chip, even if the silicon chip after cleaning is complete after deoxidation film
Dehydration, it has also become industry technical problem urgently to be resolved hurrily.
Content of the invention
The invention aims to providing a kind of silicon wafer cleaning method for preparing efficient solar battery and cleaning equipment,
Asked by the surface hydrophobic that described cleaning method and cleaning equipment can solve matte silicon chip during SPM ablution cleaning silicon chip
Topic, thus improve the cleanliness factor of cleaning.
For achieving the above object, the present invention provides a kind of silicon wafer cleaning method for preparing efficient solar battery, the party
Method comprises the following steps：A, by the mixed solution of concentrated sulphuric acid and hydrogenperoxide steam generator, silicon chip is carried out, sulphuric acid and peroxide
The quality proportioning changing hydrogen is 65～170: 1, and cleaning temperature is 100～125 DEG C, and scavenging period is 5～30min；B, by go from
Sub- water is carried out to described silicon chip；C, by hydrogenperoxide steam generator or salpeter solution, silicon chip is carried out, described peroxidating
Hydrogen is 1: 3～10 with the quality proportioning of water, and described nitric acid is 1: 2～5 with the quality proportioning of water, and described cleaning temperature is 60～80
DEG C, described scavenging period is 5～20min；D, by deionized water, described silicon chip is carried out；E, pass through hydrochloric acid and Fluohydric acid.
Mixed solution silicon chip is carried out, the quality proportioning of described hydrogen chloride and fluohydric acid gas is 1～3: 1, and described cleaning temperature is
15～25 DEG C, described scavenging period is 30～90s；F, by deionized water, described silicon chip is carried out.
In a preferred embodiment, described corresponding cleanout fluid is arranged in corresponding rinse bath, and described silicon chip passes through leaching
The mode of bubble or hydro-peening is carried out in corresponding rinse bath.
In a preferred embodiment, in step a, the mass percent concentration of described concentrated sulphuric acid stock solution is 98.3%, institute
The mass percent concentration stating hydrogenperoxide steam generator stock solution is 30%, and the quality proportioning of described sulphuric acid, hydrogen peroxide and water is 65
～170: 1: 3～6.
In further preferred embodiment, the quality proportioning of described sulphuric acid, hydrogen peroxide and water is 70: 1: 3.5, cleaning
Temperature is 122 DEG C, and scavenging period is 10min.
In a preferred embodiment, in step c, the mass percent concentration of described hydrogenperoxide steam generator stock solution is
30%, described hydrogen peroxide is 1: 5 with the quality proportioning of water, and described cleaning temperature is 65 DEG C, and described scavenging period is 10min；
Described salpeter solution stock solution quality percent concentration is 47%, and described nitric acid is 1: 3 with the quality proportioning of water, described cleaning temperature
For 65 DEG C, described scavenging period is 10min.
In a preferred embodiment, in step e, the mass percent concentration of described hydrochloric acid and Fluohydric acid. stock solution is respectively
37% and 49%, the quality proportioning of hydrogen chloride, fluohydric acid gas and water is 4: 5: 50, and described cleaning temperature is 25 DEG C, during described cleaning
Between be 50s.
In a preferred embodiment, in step c, described hydrogenperoxide steam generator or salpeter solution are used for removing parchmentizing
Carbon residual after reason and part metals particle, form layer oxide film, in step e, described oxidation in silicon chip surface simultaneously
Film is removed by Fluohydric acid..
The present invention also provides a kind of cleaning for the above-mentioned silicon wafer cleaning method for preparing efficient solar battery to set
Standby, this cleaning equipment includes the first rinse bath, the first rinsing bowl, the second rinse bath, the second rinsing bowl, the 3rd rinse bath and the 3rd
Rinsing bowl；Cleanout fluid in described first rinse bath is mixed solution, described sulphuric acid and the mistake of concentrated sulphuric acid and hydrogenperoxide steam generator
The quality proportioning of hydrogen oxide is 65～170: 1, and the cleanout fluid in described second rinse bath is hydrogenperoxide steam generator or salpeter solution,
Described hydrogen peroxide is 1: 3～10 with the quality proportioning of water, and described nitric acid is 1: 2～5 with the quality proportioning of water；Described 3rd is clear
Cleanout fluid in washing trough is the mixed solution of hydrochloric acid and Fluohydric acid., and the quality proportioning of described hydrogen chloride and fluohydric acid gas is 1～3: 1.
In a preferred embodiment, the quality proportioning of sulphuric acid, hydrogen peroxide and water described in the first rinse bath is 65～170
: 1: 3～6；When cleanout fluid described in the second rinse bath is hydrogenperoxide steam generator, described hydrogen peroxide with the quality proportioning of water is
1: 5, when cleanout fluid described in the second rinse bath is salpeter solution, nitric acid is 1: 3 with the quality proportioning of water；In 3rd rinse bath
The quality proportioning of described hydrogen chloride, fluohydric acid gas and water is 4: 5: 50.
In further preferred embodiment, described in described first rinse bath, the quality of sulphuric acid, hydrogen peroxide and water is joined
Than for 70: 1: 3.5.
The hydrophobic properties of the surface that can cause matte silicon chip relatively low with the quality proportioning of sulphuric acid in prior art and hydrogen peroxide
Poor compare, the quality proportioning of sulphuric acid and hydrogen peroxide is brought up to 65～170 from 15～30: the 1 of prior art by the present invention: 1,
Thus improving the hydrophobic properties of the surface of matte silicon chip.
Compared with passing through the cleaning of sulphuric acid and mixed solution of hydrogen peroxide in prior art, the present invention for preparing efficiently too
The silicon wafer cleaning method in positive electricity pond and cleaning equipment behind also by hydrogenperoxide steam generator or salpeter solution remove carbon residual and
Part metals particle and formation layer oxide film, the mixed solution then passing through hydrochloric acid with Fluohydric acid. removes described oxide-film, because
This can effectively improve the hydrophobic performance of silicon chip, even if the silicon chip after cleaning is dehydrated after deoxidation film completely.
Brief description
Fig. 1 is the composition structural representation of the Wafer Cleaning equipment for preparing efficient solar battery of the present invention；
Fig. 2 is the flow chart of the silicon wafer cleaning method for preparing efficient solar battery of the present invention；
Fig. 3 be through the cleaning method shown in Fig. 2 of the present invention and through other cleaning methods cleaning after silicon chip minority carrier life time pair
Than；
Fig. 4 is the minority carrier life time of silicon chip and made solar cell after the cleaning method cleaning shown in Fig. 2 of the present invention
Electrical property.
Specific embodiments
To describe the purpose of the present invention and effect with reference to specific embodiment and accompanying drawing in detail.
Referring to Fig. 1, the Wafer Cleaning equipment for preparing efficient solar battery of the present invention include the first rinse bath 1,
One rinsing bowl 2, the second rinse bath 3, the second rinsing bowl 4, the 3rd rinse bath 5 and the 3rd rinsing bowl 6.Described corresponding cleanout fluid sets
Put in corresponding rinse bath, deionized water is arranged in corresponding rinsing bowl, described silicon chip is by way of immersion or hydro-peening
Corresponding rinse bath and rinsing bowl are carried out, described cleaning setting is also provided with automatically turning silicon chip between each groove
The machinery moving, this is industry known techniques, will not be described here.
Cleanout fluid in described first rinse bath 1 is the mixed solution of concentrated sulphuric acid and hydrogenperoxide steam generator, described sulphuric acid and
The quality proportioning of hydrogen peroxide is 65～170: 1, the quality proportioning of described sulphuric acid, hydrogen peroxide and water is 65～170: 1: 3～
6.In the first embodiment of cleaning equipment of the present invention, the quality of sulphuric acid, hydrogen peroxide and water described in described first rinse bath
Proportioning is 70: 1: 3.5.
Cleanout fluid in described second rinse bath 3 is hydrogenperoxide steam generator or salpeter solution, described hydrogen peroxide and water
Quality proportioning is 1: 3～10, and described nitric acid is 1: 2～5 with the quality proportioning of water.First embodiment in cleaning equipment of the present invention
In, the cleanout fluid in described second rinse bath 2 is hydrogenperoxide steam generator, and described hydrogen peroxide is 1: 5 with the quality proportioning of water.?
In the other embodiment of cleaning equipment of the present invention, the cleanout fluid in described second rinse bath 2 is salpeter solution, described nitric acid and water
Quality proportioning be 1: 3.
Cleanout fluid in described 3rd rinse bath 5 is mixed solution, described hydrogen chloride and the fluohydric acid gas of hydrochloric acid and Fluohydric acid.
Quality proportioning be 1～3: 1.In the first embodiment of cleaning equipment of the present invention, chlorination described in described 3rd rinse bath 5
The quality proportioning of hydrogen, fluohydric acid gas and water is 4: 5: 50.
Deionization resistivity of water in described first rinsing bowl 2, the second rinsing bowl 4 and the 3rd rinsing bowl 6 is more than 10M
Ω.
Referring to Fig. 2, in conjunction with referring to Fig. 1, entered for the Wafer Cleaning equipment preparing efficient solar battery by the present invention
The method of row Wafer Cleaning carries out step S20 first, by the mixed solution of concentrated sulphuric acid and hydrogenperoxide steam generator, silicon chip is carried out
Cleaning；First in the first rinse bath 1, configure the mixed solution of concentrated sulphuric acid and hydrogenperoxide steam generator, described concentrated sulphuric acid stock solution
Mass percent concentration is 98.3%, and the mass percent concentration of described hydrogenperoxide steam generator stock solution is 30%, and configured is molten
In liquid, the quality proportioning of sulphuric acid, hydrogen peroxide and water is 65～170: 1: 3～6；Then passing through manually or mechanically transmission means will
Silicon chip is placed in the first rinse bath and is carried out, and cleaning temperature is 100～125 DEG C, and scavenging period is 5～30min.At this
In the first embodiment of Ming and Qing washing method, the quality proportioning of described sulphuric acid, hydrogen peroxide and water is 70: 1: 3.5, described cleaning temperature
Spend for 122 DEG C, scavenging period is 10min.
Then continue to step S21, by deionized water, described silicon chip is carried out, described deionization resistivity of water is big
In 10M Ω, by way of water knife hydro-peening, the silicon chip completing the cleaning of step S20 is carried out, washing time is 3～5min.
Then continue to step S22, by hydrogenperoxide steam generator or salpeter solution, silicon chip is carried out, that is, first second
Hydrogenperoxide steam generator or salpeter solution is configured, the mass percent concentration of described hydrogenperoxide steam generator stock solution is in rinse bath 3
30%, the hydrogen peroxide described in the second rinse bath 3 being equipped with is 1: 3～10 with the quality proportioning of water；Described salpeter solution stock solution
Mass percent concentration is 47%, and the nitric acid described in the second rinse bath 3 being equipped with is 1: 2～5 with the quality proportioning of water；When
After being equipped with hydrogenperoxide steam generator or salpeter solution in two rinse baths 3, described silicon chip is passed through manually or mechanically transmission means setting
Second rinse bath 3 is carried out, described cleaning temperature is 60～80 DEG C, described scavenging period is 5～20min.In this step
In rapid, described hydrogenperoxide steam generator or salpeter solution can effectively remove carbon residual and part metals grain after dense sulfuric acid treatment
Son, forms layer oxide film in silicon chip surface simultaneously.In the first embodiment of cleaning method of the present invention, this step passes through peroxide
Change hydrogen solution silicon chip is carried out, described hydrogen peroxide is 1: 5 with the quality proportioning of water, and described cleaning temperature is 65 DEG C, institute
Stating scavenging period is 10min.In the other embodiment of cleaning method of the present invention, this step is carried out to silicon chip by salpeter solution
Cleaning, described nitric acid is 1: 3 with the quality proportioning of water, and described cleaning temperature is 65 DEG C, and described scavenging period is 10min.
Then continue to step S23, by deionized water, described silicon chip is carried out, described deionization resistivity of water is big
In 10M Ω, by way of water knife hydro-peening, the silicon chip completing the cleaning of step S22 is carried out, washing time is 3～5min.
Then continue to step S24, by the mixed solution of hydrochloric acid and Fluohydric acid., silicon chip is carried out, that is, first the 3rd
The mixed solution of configuration hydrochloric acid and Fluohydric acid. in rinse bath 5, the mass percent concentration of described hydrochloric acid and Fluohydric acid. stock solution is respectively
For 37% and 49%, the quality proportioning of hydrogen chloride and fluohydric acid gas described in the cleanout fluid being equipped with is 1～3: 1；Silicon chip is passed through
Manually or mechanically transmission means is arranged in the 3rd rinse bath 5 and silicon chip is carried out, and described cleaning temperature is 15～25 DEG C, institute
Stating scavenging period is 30～90s.In the first embodiment of cleaning method of the present invention, hydrogen chloride, fluohydric acid gas and water in this step
Quality proportioning be 4: 5: 50, described cleaning temperature be 25 DEG C, described scavenging period be 50s.In this step, step S22 exists
The oxide-film that silicon chip surface is formed is removed by Fluohydric acid..
Then continue to step S25, by deionized water, described silicon chip is carried out, described deionization resistivity of water is big
In 10M Ω, by way of water knife hydro-peening, the silicon chip completing the cleaning of step S24 is carried out, washing time is 3～5min.
Referring to Fig. 3, which show three groups of silicon chips being a group to 10 respectively and be respectively adopted RCA cleaning method, the present invention
After the first embodiment of cleaning method and common nitration mixture cleaning method (mixed solution of Fluohydric acid. and nitric acid is usually used) cleaning
The minority carrier life time of silicon chip, the curve of the minority carrier life time of silicon chip that three kinds of cleaning methods are cleaned is respectively C1, C2 and C3, from figure
This it appears that the corresponding minority carrier life time of cleaning method silicon chip of the present invention is substantially better than by common nitration mixture cleaning method gained
Silicon chip minority carrier life, the only silicon chip minority carrier life of slightly worse than RCA cleaning method gained.But the cleaning method of the present invention is not deposited
Square resistance existing in RCA cleaning method is difficult to control to and complex process and the problems such as usage cycles are short.
It should be noted that, the minority carrier life time of silicon chip as herein described simultaneously non-immediate surveys its few sub- longevity to the silicon chip after cleaning
Life, but after Wafer Cleaning, silicon chip is carried out with the effective minority carrier life time of silicon chip recording after surface passivation, that is, as herein described
" minority carrier life time of silicon chip " refers to " effective minority carrier life time of silicon chip after surface passivation ", and passivating film can adopt silicon oxide or silicon nitride
Deng.
In addition, the minority carrier life time curve C5 of silicon chip after the cleaning method of the present invention cleaning shown in from Fig. 4 and made
The open circuit voltage curve C4 of solar cell silicon wafer can be seen that through the present invention cleaning method cleaning after silicon chip minority carrier life time
It is all higher than equal to 292 μ s, and corresponding open-circuit voltage Voc is all big and 684mV.
In sum, the silicon wafer cleaning method for preparing efficient solar battery of the present invention and cleaning equipment first pass through dense
The mixed solution of sulphuric acid and hydrogenperoxide steam generator is carried out to silicon chip, is carried out by deionized water afterwards, then passes through
Hydrogenperoxide steam generator or salpeter solution are carried out to silicon chip to remove carbon residual and part metals particle and to form one layer of oxidation
Film is simultaneously cleaned by deionized water, finally by hydrochloric acid and Fluohydric acid. mixed solution to remove the oxide-film on described silicon chip simultaneously
It is carried out by deionized water piece.The present invention can effectively improve the hydrophobic performance of silicon chip, even if the silicon chip after cleaning is going
It is dehydrated completely after oxide-film.
Claims (10)
1. a kind of silicon wafer cleaning method for preparing efficient solar battery is it is characterised in that the method comprises the following steps：a、
By the mixed solution of concentrated sulphuric acid and hydrogenperoxide steam generator, silicon chip is carried out, the quality proportioning of sulphuric acid and hydrogen peroxide is 65
～170: 1, cleaning temperature is 100～125 DEG C, and scavenging period is 5～30min；B, by deionized water, described silicon chip is carried out
Cleaning；C, by hydrogenperoxide steam generator or salpeter solution, silicon chip is carried out, described hydrogen peroxide is 1 with the quality proportioning of water
: 3～10, described nitric acid is 1: 2～5 with the quality proportioning of water, and described cleaning temperature is 60～80 DEG C, and described scavenging period is 5
～20min；D, by deionized water, described silicon chip is carried out；E, by the mixed solution of hydrochloric acid and Fluohydric acid., silicon chip is entered
Row cleaning, the quality proportioning of described hydrochloric acid and Fluohydric acid. is 1～3: 1, and described cleaning temperature is 15～25 DEG C, described scavenging period
For 30～90s；F, by deionized water, described silicon chip is carried out.
2. the silicon wafer cleaning method for preparing efficient solar battery according to claim 1 is it is characterised in that described
The mixed solution of the mixed liquor of concentrated sulphuric acid and hydrogenperoxide steam generator, hydrogenperoxide steam generator or salpeter solution, hydrochloric acid and Fluohydric acid. divides
It is not arranged in corresponding rinse bath, described silicon chip is carried out by way of immersion or hydro-peening in corresponding rinse bath.
3. the silicon wafer cleaning method for preparing efficient solar battery according to claim 1 is it is characterised in that in step
In a, the mass percent concentration of described concentrated sulphuric acid stock solution is 98.3%, and the mass percent of described hydrogenperoxide steam generator stock solution is dense
Spend for 30%, the quality proportioning of described sulphuric acid, hydrogen peroxide and water is 65～170: 1: 3～6.
4. the silicon wafer cleaning method for preparing efficient solar battery according to claim 3 is it is characterised in that described sulfur
The quality proportioning of acid, hydrogen peroxide and water is 70: 1: 3.5, and cleaning temperature is 122 DEG C, and scavenging period is 10min.
5. the silicon wafer cleaning method for preparing efficient solar battery according to claim 1 is it is characterised in that in step
In c, the mass percent concentration of described hydrogenperoxide steam generator stock solution is 30%, and described hydrogen peroxide is 1 with the quality proportioning of water:
5, described cleaning temperature is 65 DEG C, and described scavenging period is 10min；Described salpeter solution stock solution quality percent concentration is
47%, described nitric acid is 1: 3 with the quality proportioning of water, and described cleaning temperature is 65 DEG C, and described scavenging period is 10min.
6. the silicon wafer cleaning method for preparing efficient solar battery according to claim 1 is it is characterised in that in step
In e, the mass percent concentration of described hydrochloric acid and Fluohydric acid. stock solution is respectively 37% and 49%, hydrogen chloride, fluohydric acid gas and water
Quality proportioning is 4: 5: 50, and described cleaning temperature is 25 DEG C, and described scavenging period is 50s.
7. the silicon wafer cleaning method for preparing efficient solar battery according to claim 1 is it is characterised in that in step
In c, described hydrogenperoxide steam generator or salpeter solution are used for removing carbon residual and the part metals particle after dense sulfuric acid treatment, with
When silicon chip surface formed layer oxide film, in step e, described oxide-film is removed by Fluohydric acid..
8. the silicon wafer cleaning method for preparing efficient solar battery described in a kind of any one for claim 1 to 7 is clear
Wash equipment it is characterised in that this cleaning equipment include the first rinse bath, the first rinsing bowl, the second rinse bath, the second rinsing bowl,
3rd rinse bath and the 3rd rinsing bowl；Cleanout fluid in described first rinse bath is molten for the mixing of concentrated sulphuric acid and hydrogenperoxide steam generator
Liquid, the quality proportioning of described sulphuric acid and hydrogen peroxide is 65～170: 1, and the cleanout fluid in described second rinse bath is hydrogen peroxide
Solution or salpeter solution, described hydrogen peroxide is 1: 3～10 with the quality proportioning of water, and described nitric acid is 1 with the quality proportioning of water:
2～5；Cleanout fluid in described 3rd rinse bath is the mixed solution of hydrochloric acid and Fluohydric acid., the quality of described hydrochloric acid and Fluohydric acid.
Proportioning is 1～3: 1.
9. the cleaning equipment of the silicon wafer cleaning method for preparing efficient solar battery according to claim 8, its feature
It is, the quality proportioning of sulphuric acid, hydrogen peroxide and water described in the first rinse bath is 65～170: 1: 3～6；When the second rinse bath
Described in cleanout fluid when being hydrogenperoxide steam generator, the quality proportioning of described hydrogen peroxide and water is 1: 5, when institute in the second rinse bath
When stating cleanout fluid for salpeter solution, nitric acid is 1: 3 with the quality proportioning of water；Hydrochloric acid, Fluohydric acid. and water described in 3rd rinse bath
Quality proportioning be 4: 5: 50.
10. the cleaning equipment of the silicon wafer cleaning method for preparing efficient solar battery according to claim 9, its feature
It is, the quality proportioning of sulphuric acid, hydrogen peroxide and water described in described first rinse bath is 70: 1: 3.5.
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| CN103700733B (en) * | 2014-01-16 | 2015-10-21 | 常州天合光能有限公司 | The clean method of the N-type crystalline silicon substrate of solar cell |
| CN103949429A (en) * | 2014-04-25 | 2014-07-30 | 哈尔滨工业大学 | Silicon carbide monocrystal washing method |
| CN104393112B (en) * | 2014-11-13 | 2017-06-20 | 苏州润阳光伏科技有限公司 | It is a kind of to solve the low method of surface concentration after boron spreads |
| CN104752166A (en) * | 2015-02-26 | 2015-07-01 | 南昌大学 | Method used for washing polycrystalline silicon wafer before diffusion |
| CN106206247A (en) * | 2015-05-25 | 2016-12-07 | 宁波时代全芯科技有限公司 | The method of clean semiconductor components |
| CN106952805B (en) * | 2017-04-11 | 2019-12-13 | 东方日升新能源股份有限公司 | graphite boat cleaning process |
| CN111468462A (en) * | 2019-01-23 | 2020-07-31 | 山东浪潮华光光电子股份有限公司 | Method for removing ceramic disc carbide layer for L ED thinning paster |
| CN114226327A (en) * | 2021-12-17 | 2022-03-25 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing composite sediment deposited on surface of ceramic substrate |
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| EP1863100A1 (en) * | 2006-05-30 | 2007-12-05 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for the production of thin substrates |
| CN101789371B (en) * | 2009-01-23 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of semiconductor component |
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