CN103646871A - Method for improving uniformity of oxide layer on surface of amorphous silicon - Google Patents
Method for improving uniformity of oxide layer on surface of amorphous silicon Download PDFInfo
- Publication number
- CN103646871A CN103646871A CN201310578415.2A CN201310578415A CN103646871A CN 103646871 A CN103646871 A CN 103646871A CN 201310578415 A CN201310578415 A CN 201310578415A CN 103646871 A CN103646871 A CN 103646871A
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- China
- Prior art keywords
- amorphous silicon
- oxide layer
- clean
- hydrofluoric acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
Abstract
The invention provides a method for improving uniformity of an oxide layer on a surface of amorphous silicon, the method comprising the steps of a) cleaning amorphous silicon with hydrofluoric acid; b) cleaning the amorphous silicon with water; c) removing a water film on the surface of the amorphous silicon; d) cleaning the amorphous silicon with an oxidizing solution; and e) conducting drying treatment for the silicon wafer. By introducing the water film removal step after replacement of the hydrofluoric acid by water, the method, provided by the invention, enables the oxidizing solution to promptly and uniformly contact the amorphous silicon for oxidation treatment and a uniform oxide layer to be generated on the surface of the amorphous silicon, so that energy can be well buffered during ELA crystallization and uniform polysilicon of high quality is prepared.
Description
Technical field
The present invention relates to a kind of inhomogeneity method of raising amorphous silicon surfaces oxide layer, be specially the Organic Light Emitting Diode at OLED() field, before excimer laser crystallization, improve the inhomogeneity method of amorphous silicon surfaces oxide layer.
Background technology
In semiconductor preparation field, by CVD(chemical vapour deposition technique) become the amorphous silicon of film preparation, through autoxidation, on its surface, form an inhomogeneous oxide layer, make uniformity and the bad of amorphous silicon surfaces; For obtaining the good oxide layer of quality, existing amorphous silicon surfaces oxide layer processing method is: utilize hydrofluoric acid to remove the oxide layer of silicon chip surface bad, washing silicon chip remains in its surperficial hydrofluoric acid to remove, and through oxidant, oxidation generates a chemical oxide layer at silicon chip surface, dry; Between above steps, be closely connected, without the time interval.
Yet silicon chip, after washing, remains in its surperficial water and can form moisture film in above-mentioned processing method, the oxidation of oxidant to silicon chip surface in the obstruction subsequent step of this moisture film meeting part, it is not still very even making the oxide layer distribution forming at silicon chip surface.The surface oxide layer of amorphous silicon plays a part energy snubber in ELA (quasi-molecule laser annealing) crystallization process, the inhomogeneous crystallization effect that must affect ELA of surface oxide layer, cause prepared polysilicon uniformity not good, therefore, at OLED(, contain low temperature polycrystalline silicon technology LTPS) field, the treatment technology of amorphous silicon surfaces oxide layer has become a core technology of the excimer laser crystallization technology of main flow.
Existing surface oxide layer technology is mainly the surface treatment based on the less silicon chip of area, and in OLED field, 4.5 generation silicon chip size (920mm*730mm) be 20 times of 8 inches of silicon chips of general semiconductor, silicon chip surface is long-pending larger, the inhomogeneity impact of surface oxide layer is just larger, and uniformity is more difficult control also; Therefore, at OLED(containing LTPS) polysilicon technology of preparing in, thereby uniformity how to control large area oxide layer is prepared the much higher crystal silicon of uniformity and has been become the most important thing.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of inhomogeneity method of raising amorphous silicon surfaces oxide layer, comprise the steps:
A). amorphous silicon described in use hydrofluoric acid clean;
B). make water clean described amorphous silicon;
C). remove the moisture film of described amorphous silicon surfaces;
D). use oxidizing solution to clean described amorphous silicon;
E). described amorphous silicon is dried to processing.
According to an embodiment of the present invention, described step duration a) is 20-40s, and the concentration of described hydrofluoric acid is 0.5%-2%.
According to another embodiment of the present invention, described step b) duration is 10-80s.
According to another embodiment of the present invention, described step c) duration is 3-10s
According to another embodiment of the present invention, described step c) mode of removing the moisture film of described amorphous silicon surfaces in dries or uses clean N for rotation
2dry up.
According to another embodiment of the present invention, described step c) rotating speed that in, rotation dries is 150-300 rev/min.
According to another embodiment of the present invention, described step c) clean N in
2flow be 200-400NL/min.
According to another embodiment of the present invention, described steps d) duration is 20-40s.
According to another embodiment of the present invention, described oxidizing solution is Ozone Water, and the concentration of described Ozone Water is 15-30ppm.
According to another embodiment of the present invention, described step e) in, the dry mode of processing dries or uses clean N for rotation
2dry up.
The inhomogeneity method of a kind of raising amorphous silicon surfaces of the present invention oxide layer, by introduce moisture film after washing displacement hydrofluoric acid, remove step, make Ozone Water contact in time, equably amorphous silicon surfaces and carry out oxidation processes, in amorphous silicon surfaces, generate uniform oxide layer, thereby can well cushion energy when ELA crystallization, prepare high-quality polysilicon uniformly, method of the present invention is particularly evident to the uniformity effect on raising large-sized silicon wafers surface, OLED field.
Accompanying drawing explanation
Fig. 1 is the flow chart of the inhomogeneity method of raising amorphous silicon surfaces oxide layer of the present invention.
Embodiment
Below, in conjunction with embodiment, the inhomogeneity method of a kind of raising amorphous silicon surfaces of the present invention oxide layer is elaborated:
Amorphous silicon can be oxidized in natural environment, on its surface, form silicon dioxide oxide layer, the uniformity of this oxide layer and quality are all not good, and surface oxide layer plays a part energy snubber in follow-up ELA crystallization process, the inhomogeneous crystallization effect that must affect ELA of surface oxide layer, cause polysilicon uniformity not good, therefore, prepare the much higher crystal silicon of uniformity and must form the uniform oxide layer of one deck on the surface of amorphous silicon.
As shown in Figure 1, the inhomogeneity method of raising amorphous silicon surfaces oxide layer of the present invention is: a). amorphous silicon described in use hydrofluoric acid clean; B). make water clean described amorphous silicon; C). remove the moisture film of described amorphous silicon surfaces; D). use oxidizing solution to clean described amorphous silicon; E). described silicon chip is dried to processing.
In the present invention, using hydrofluoric acid clean silicon chip, is to utilize the chemical reaction between hydrofluoric acid and oxide layer that oxide layer is removed from silicon chip surface, and wherein, the duration of hydrofluoric acid clean silicon chip is preferably 20-40s, and temperature is preferably 18 ℃-25 ℃.
According to an embodiment of the present invention, hydrofluoric acid used is preferably dilute hydrofluoric acid solution, the hydrofluoric acid that more preferably concentration is 0.5%-2%, when hydrofluoric acid concentration is worth lower than this, cannot obtain good cleaning performance, while being worth higher than this, cleaning performance does not significantly increase, can cause the waste of hydrofluoric acid, cost is improved.Wherein, the concentration of described hydrofluoric acid refers to the quality percentage composition of hydrogen fluoride in hydrofluoric acid aqueous solution.
In the present invention, for avoiding remaining in the impact of the hydrofluoric acid of silicon chip surface on subsequent step, reply silicon chip carries out water cleaning to remove residual hydrofluoric acid, and the duration of cleaning step is preferably 10-80s, can use pure water, H
2water is (containing 1ppm H
2pure water) or high-pressure washing amorphous silicon is cleaned, wherein, described pure water refers to water free from foreign meter.
After the present invention is located at water cleaning step by removal moisture film step, before oxidizing solution cleans, can remove in time the moisture film that remains in silicon chip surface, avoid its impact on subsequent oxidation, the duration of this removal moisture film step is preferably 3-10s.
According to an embodiment of the present invention, the mode of removing moisture film is rotation drying, and rotating speed is preferably 150-300 rev/min, and for example 200 revs/min, the duration is 5s.
According to another embodiment of the present invention, the technology of removing moisture film adopts clean N
2dry up clean N
2flow be preferably 200-400NL/min, 400NL/min for example, the duration is 5s.The technology of removal moisture film of the present invention can for but be not limited to above-mentioned two kinds of execution modes, other can be realized mode of removing moisture film object and be suitable for equally the present invention.
In the present invention, after above steps completes, silicon chip is carried out to surface oxidation, to form uniform oxide layer on its surface, be specially and use oxidizing solution cleaning silicon chip, described oxidizing solution refers to comprise the solution of the solute with oxidizability, wherein, oxidizing solution is preferably Ozone Water, and the concentration of described Ozone Water is preferably 15-30ppm (1,000,000/), and the duration of this oxidation step is preferably 20-40s.
In the present invention, after above-mentioned oxide layer forms, silicon chip is dried to processing, the dry duration of processing is preferably 20-80s, and the concrete mode of described dry processing is preferably rotation and dries or clean N
2dry up.
According to an embodiment of the present invention, dry processing adopts clean N
2dry up clean N
2flow be preferably 200-400NL/min.
According to another embodiment of the present invention, the dry mode that adopts rotation to dry of processing, the rotating speed that described rotation dries is preferably 150-300 rev/min, and for example 300 revs/min, the duration is 60s.
The inhomogeneity method of raising amorphous silicon surfaces oxide layer of the present invention, removes moisture film step by increase, removes in time the moisture film that remains in silicon chip surface, makes silicon chip surface form uniform oxide layer, thereby obtains high-quality polysilicon.
By specific embodiment, the inhomogeneity method of raising amorphous silicon surfaces oxide layer of the present invention is described further below.
Embodiment
Under normal temperature, utilizing concentration is that 0.5% hydrofluoric acid aqueous solution cleans amorphous silicon chip 40s, removes the inhomogeneous oxide layer of amorphous silicon surfaces with etching; Subsequently, use pure water to clean described silicon chip 40s, to wash away the hydrofluoric acid that remains in silicon chip surface; After water cleans, the water that remains in silicon chip surface can form moisture film, uses clean N
2silicon chip is dried up, to remove the moisture film of silicon chip surface, N
2flow velocity be 400NL/min, the duration is 5s; Then, the Ozone Water cleaning silicon chip 40s that working concentration is 15ppm, carries out oxidation processes to silicon chip, and collocation is waved, the even technology such as rotation, to form uniform oxide layer at silicon chip surface; Finally, rotation dries silicon chip, and rotating speed remains on 300 revs/min, and the duration is 60 seconds, owing to having got rid of the interference of moisture film, after drying, has formed the uniform oxide layer of one deck on the surface of amorphous silicon.
If be not particularly limited, above-mentioned steps is all carried out under normal temperature (25 ℃).
The inhomogeneity method of a kind of raising amorphous silicon surfaces of the present invention oxide layer, by introduce moisture film after washing displacement hydrofluoric acid, remove step, make Ozone Water contact in time, equably amorphous silicon and carry out oxidation processes, in amorphous silicon surfaces, generate uniform oxide layer, thereby can well cushion energy when ELA crystallization, prepare high-quality polysilicon uniformly, method of the present invention is particularly evident to the uniformity effect on raising large-sized silicon wafers surface, OLED field.
Unless be particularly limited, term used herein is the implication that those skilled in the art understand conventionally.
Execution mode described in the invention is only for exemplary purpose; not in order to limit the scope of the invention, those skilled in the art can make various other replacements, changes and improvements within the scope of the invention, thereby; the invention is not restricted to above-mentioned execution mode, and be only defined by the claims.
Claims (10)
1. improve the inhomogeneity method of amorphous silicon surfaces oxide layer, comprise the steps:
A). amorphous silicon described in use hydrofluoric acid clean;
B). make water clean described amorphous silicon;
C). remove the moisture film of described amorphous silicon surfaces;
D). use oxidizing solution to clean described amorphous silicon;
E). described amorphous silicon is dried to processing.
2. according to the process of claim 1 wherein, described step duration a) is 20-40s, and the concentration of described hydrofluoric acid is 0.5%-2%.
3. the duration according to the method for claim 1 or 2, wherein, described step b) is 10-80s.
4. the duration according to the process of claim 1 wherein, described step c) is 3-10s
5. the mode of removing the moisture film of described amorphous silicon surfaces according to the method for claim 1 or 4, wherein, described step c) dries or uses clean N for rotation
2dry up.
6. the rotating speed that according to the method for claim 5, wherein, described step c), rotation dries is 150-300 rev/min.
7. clean N according to the method for claim 5, wherein, described step c)
2flow be 200-400NL/min.
8. the duration according to the method for claim 1 or 2, wherein, described steps d) is 20-40s.
9. according to the process of claim 1 wherein, described oxidizing solution is Ozone Water, and the concentration of described Ozone Water is 15-30ppm.
10. according to the method for claim 1 or 2, wherein, described step e), the dry mode of processing dries or uses clean N for rotation
2dry up.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310578415.2A CN103646871A (en) | 2013-11-18 | 2013-11-18 | Method for improving uniformity of oxide layer on surface of amorphous silicon |
| TW102147047A TW201521101A (en) | 2013-11-18 | 2013-12-18 | Method for improving the uniformity of the surface oxide layer of the amorphous silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310578415.2A CN103646871A (en) | 2013-11-18 | 2013-11-18 | Method for improving uniformity of oxide layer on surface of amorphous silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103646871A true CN103646871A (en) | 2014-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310578415.2A Pending CN103646871A (en) | 2013-11-18 | 2013-11-18 | Method for improving uniformity of oxide layer on surface of amorphous silicon |
Country Status (2)
| Country | Link |
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| CN (1) | CN103646871A (en) |
| TW (1) | TW201521101A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576318A (en) * | 2014-12-24 | 2015-04-29 | 深圳市华星光电技术有限公司 | Amorphous silicon surface oxide layer forming method |
| CN109585366A (en) * | 2018-12-03 | 2019-04-05 | 武汉华星光电半导体显示技术有限公司 | Low temperature polycrystalline silicon display panel manufacturing method |
| CN109742015A (en) * | 2019-01-08 | 2019-05-10 | 京东方科技集团股份有限公司 | Film surface processing method and film surface processing equipment |
| CN111540676A (en) * | 2020-05-11 | 2020-08-14 | 西安奕斯伟硅片技术有限公司 | Silicon wafer edge stripping method and silicon wafer |
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| US5092937A (en) * | 1989-07-19 | 1992-03-03 | Matsushita Electric Industrial Co., Ltd. | Process for treating semiconductors |
| CN1519060A (en) * | 2003-01-21 | 2004-08-11 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
| CN102243991A (en) * | 2011-05-06 | 2011-11-16 | 上海大学 | Method for inducing amorphous silicon film with tin to be crystallized into polycrystalline silicon film |
| CN102270570A (en) * | 2010-06-03 | 2011-12-07 | 三星移动显示器株式会社 | Method of crystallizing silicon layer and method of forming thin film transistor using same |
-
2013
- 2013-11-18 CN CN201310578415.2A patent/CN103646871A/en active Pending
- 2013-12-18 TW TW102147047A patent/TW201521101A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5092937A (en) * | 1989-07-19 | 1992-03-03 | Matsushita Electric Industrial Co., Ltd. | Process for treating semiconductors |
| CN1519060A (en) * | 2003-01-21 | 2004-08-11 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
| CN102270570A (en) * | 2010-06-03 | 2011-12-07 | 三星移动显示器株式会社 | Method of crystallizing silicon layer and method of forming thin film transistor using same |
| CN102243991A (en) * | 2011-05-06 | 2011-11-16 | 上海大学 | Method for inducing amorphous silicon film with tin to be crystallized into polycrystalline silicon film |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576318A (en) * | 2014-12-24 | 2015-04-29 | 深圳市华星光电技术有限公司 | Amorphous silicon surface oxide layer forming method |
| CN104576318B (en) * | 2014-12-24 | 2017-09-05 | 深圳市华星光电技术有限公司 | A kind of amorphous silicon surfaces oxide layer forming method |
| CN109585366A (en) * | 2018-12-03 | 2019-04-05 | 武汉华星光电半导体显示技术有限公司 | Low temperature polycrystalline silicon display panel manufacturing method |
| WO2020113841A1 (en) * | 2018-12-03 | 2020-06-11 | 武汉华星光电半导体显示技术有限公司 | Method for manufacturing low-temperature polysilicon display panel |
| CN109742015A (en) * | 2019-01-08 | 2019-05-10 | 京东方科技集团股份有限公司 | Film surface processing method and film surface processing equipment |
| CN111540676A (en) * | 2020-05-11 | 2020-08-14 | 西安奕斯伟硅片技术有限公司 | Silicon wafer edge stripping method and silicon wafer |
| CN111540676B (en) * | 2020-05-11 | 2024-02-23 | 西安奕斯伟材料科技股份有限公司 | Silicon wafer edge stripping method and silicon wafer |
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| Publication number | Publication date |
|---|---|
| TW201521101A (en) | 2015-06-01 |
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Application publication date: 20140319 |