CN102427020A - Wafer cleaning method capable of effectively reducing water mark defect - Google Patents
Wafer cleaning method capable of effectively reducing water mark defect Download PDFInfo
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- CN102427020A CN102427020A CN2011101834488A CN201110183448A CN102427020A CN 102427020 A CN102427020 A CN 102427020A CN 2011101834488 A CN2011101834488 A CN 2011101834488A CN 201110183448 A CN201110183448 A CN 201110183448A CN 102427020 A CN102427020 A CN 102427020A
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Abstract
The invention discloses a wafer cleaning method capable of effectively reducing the water mark defect, used for wafer cleaning before the growth of epitaxial silicon or epitaxial germanium silicon, wherein the method comprises the following steps: step 1: cleaning a wafer with SC1 solution in a chemical tank I; step 2: cleaning off the residual SC1 solution on the surface of the wafer with deionized water in a chemical tank II; step 3: cleaning the wafer with SC2 solution in a chemical tank III; step 4: cleaning off the residual SC2 solution on the surface of the wafer with deionized water in a chemical tank VI; and step 5: in a chemical tank V, firstly treating the wafer with hydrofluoric acid, then cleaning off residual hydrofluoric acid on the surface of the wafer with deionized water in an overflowing mode, and finally drying the wafer. Through the wafer cleaning method capable of effectively reducing the water mark defect provided by the invention, the forming of the water mark defect can be avoided effectively when the wafer is put in solution after being taken out of the water solution and in the transferring process, and the technology process is simple and easy to control.
Description
Technical field
The present invention relates to the semiconductor fabrication technical field, particularly relate to a kind of wafer cleaning method of effective minimizing washmarking defective.
Background technologyIn the manufacture process of integrated circuit (like logic and storage chip), can use epitaxial silicon or epitaxial Germanium silicon technology usually, so-called epitaxy technology is meant the monocrystal material that growth one deck has identical lattice arrangement with substrate on single crystalline substrate.And before epitaxial silicon or epitaxial Germanium silicon growth, RCA ablution clean wafers surface is used in the work that at first will carry out exactly, removing the impurity particle of crystal column surface, for the growth of epitaxial loayer provides good basis.The cleaning method of most widely used wafer surface is a RCA standard cleaning method in the practice at present.
RCA standard cleaning method is a kind of typical wet chemical cleaning technique, and initiated by RCA laboratories that the Preece pauses in the New Jersey such as Kern the sixties in 20th century, and gain the name therefrom.RCA standard cleaning method relies on solvent, acid, surfactant and water, under the situation of not destroying the crystal column surface characteristic through injection, purification, oxidation, etching and dissolving wafer surfaces of contaminant, organic substance and metal ion pollution, to obtain bright and clean surface.As shown in Figure 2, the RCA ablution comprises following 7 steps, that is: (1) is with ammoniacal liquor, hydrogen peroxide and aqueous systems clean wafers; (2) with the residue of ammoniacal liquor, hydrogen peroxide and the aqueous systems on deionized water clean wafers surface; (3) with hydrochloric acid, hydrogen peroxide and aqueous systems clean wafers; (4) with the residue of hydrochloric acid, hydrogen peroxide and the aqueous systems on deionized water clean wafers surface; (5) use the hydrofluoric acid treatment wafer; (6) it is residual to remove the hydrofluoric acid solution of wafer surface with deionized water overflow mode; And (7) drying crystal wafer.Wherein, seven above-mentioned steps are respectively in different chemical tanks, to carry out, and do the problem that is produced like this and be: after the hydrofluoric acid treatment, the surface of wafer is a repellency, forms the washmarking defective easily in follow-up washed with de-ionized water and drying steps.Wafer surface washmarking generation of defects will certainly affect to the growth of follow-up epitaxial silicon or epitaxial Germanium silicon, as causes the epitaxial loayer can't normal growth or the like.
Summary of the invention
The object of the present invention is to provide a kind of wafer cleaning method of effective minimizing washmarking defective, can effectively reduce the formation of washmarking defective in the cleaning process of epitaxial silicon or epitaxial Germanium silicon growth wafer surface before.
To achieve these goals, the technical scheme of the present invention's employing is:
A kind of wafer cleaning method of effective minimizing washmarking defective is used for the cleaning of epitaxial silicon or epitaxial Germanium silicon growth wafer before, wherein, comprises the steps:
Step S1: in chemical tank one with SC1 solution clean wafers;
Step S2: in chemical tank two with the SC1 solution of deionized water clean wafers remained on surface;
Step S3: in chemical tank three with SC2 solution clean wafers;
Step S4: in chemical tank four with the SC2 solution of deionized water clean wafers remained on surface;
Step S5: in chemical tank five, at first use the hydrofluoric acid treatment wafer, remove the residual hydrofluoric acid solution of wafer surface with deionized water overflow mode then, the said wafer of final drying.
Above-mentioned method, wherein, the concentration of the hydrofluoric acid solution of using among the said step S5 is 0.15%-2%, temperature is 23 ℃-30 ℃.
Above-mentioned method, wherein, the flow velocity of the deionized water of using among said step S2, step S4 and the step S5 is 20L/Min-80L/Min.
Above-mentioned method, wherein, among the said step S5 with the dry said wafer of IPA.
The wafer cleaning method of a kind of effective minimizing washmarking defective of the present invention; On the basis of the wafer cleaning method of prior art, also be that hydrofluoric acid treatment, washed with de-ionized water and drying are incorporated in the same chemical tank and carry out with last three steps; Make wafer before drying, remain in the aqueous solution always; Put into solution after can effectively avoiding wafer taken out again and in the formation of the washmarking defective that transport process caused, technical process is simple and easy to control from the aqueous solution.
Description of drawings
Fig. 1 is the flow chart of the wafer cleaning method of a kind of effective minimizing washmarking defective of the present invention;
Fig. 2 is the flow chart of the wafer of the prior art method of cleaning.
Embodiment
Below in conjunction with Figure of description the present invention is done further detailed explanation.
Just be based on the wafer cleaning method (RCA standard cleaning method) of prior art and proposing various embodiment of the present invention.
As shown in Figure 1, the wafer cleaning method of a kind of effective minimizing washmarking defective of the present invention comprises the steps:
Step S1: in chemical tank one with SC1 solution clean wafers;
SC1 solution is claimed standard cleaning solution again No. 1, is a kind of alkaline cleaning fluid, and it is formulated by ammoniacal liquor, hydrogen peroxide and three kinds of compositions of water.Hydrogen peroxide has very strong oxidizability, and after wafer was put into SC1 solution, the surface of wafer can form the hydrophilic oxide-film of one deck under the effect of hydrogen peroxide.And ammoniacal liquor has corrosivity; The oxide-film that wafer surface forms can continue to react and be corroded with ammoniacal liquor; Corrosion back hydrogen peroxide can form the new oxide-film of one deck on the surface of wafer again, like this, and the oxidation of circulation and corrosion; Make the impurity particle of wafer surface and the metal impurities of part to get into together among the solution, and then reach the purpose of removing along with corrosion layer.Simultaneously, the hydroxide ion (OH in the hydrogen peroxide
-), be a kind of electronegative ion, it can be accumulated on the surface and foreign ion of wafer, thereby makes foreign ion under the effect of the negative electrical charge on wafer surface and impurity particle surface, be ostracised and get in the solution, breaks away from the surface of wafer.
Step S2: in chemical tank two with deionized water clean wafers remained on surface SC1 solution;
This step is carried out in chemical tank two, can partly remain on the surface of wafer owing in preceding working procedure, use SC1 solution, therefore need remove the residue of wafer surface SC1 solution with deionized water.
Step S3: in chemical tank three with SC2 solution clean wafers;
SC2 solution is claimed standard cleaning solution again No. 2, and is formulated according to certain ratio by hydrochloric acid, hydrogen peroxide and water, and it has higher oxidability and lower pH value, has crucial effects for the removal of the metallic particles of wafer surface.SC2 solution at first utilizes hydrogen peroxide with the metallic particles oxidation, utilizes hydrochloric acid and the metal generation chloride that reacts then, thereby with the metallic particles dissolving of wafer surface and remove.
Step S4: in chemical tank four with the SC2 solution of deionized water clean wafers remained on surface;
Because in preceding working procedure, using SC2 solution can partly remain on the surface of wafer, therefore need deionized water to remove the residue of wafer surface SC1 solution;
Step S5: in chemical tank five, at first use the hydrofluoric acid treatment wafer, remove the residual hydrofluoric acid solution of wafer surface, final drying wafer with deionized water overflow mode then;
The hydrofluoric acid of using in this step is mainly used in removes the oxide layer that wafer surface generates naturally, and wherein, the concentration of hydrofluoric acid is preferably 0.15%-2%, and temperature is preferably 23 ℃-30 ℃.As shown in fig. 1; In the present embodiment, the hydrofluoric acid solution dry three process residual and wafer of removing wafer surface with the hydrofluoric acid treatment wafer, with deionized water is incorporated in the same chemical tank and carries out, and can effectively avoid the washmarking generation of defects; This is because present repellency through the wafer surface after the hydrofluoric acid treatment; If put into solution after wafer is taken out this moment from solution again, will certainly in subsequent technique, produce the washmarking defective, thereby influence the performance of wafer.The present invention proposes to above-mentioned deficiency just; This method with follow-up three process be the hydrofluoric acid treatment wafer, to remove the hydrofluoric acid solution of wafer surface with deionized water residual and be incorporated in the same chemical tank five and carry out (also soon the dotted portion among Fig. 2 is merged into the step S5 among Fig. 1) with IPA (Isopropyl Alcohol-isopropyl alcohol) drying crystal wafer three process; Make wafer before drying, remain in the solution always; Can effectively avoid in the transport process of wafer, producing the washmarking defective, and then guarantee the cleaning performance and the performance of wafer.
Simultaneously, the flow velocity of the deionized water of in step S2, step S4 and step S5, using is preferably 20L/Min-80L/Min, in each procedure, to reach better removing effect respectively.
The wafer cleaning method of a kind of effective minimizing washmarking defective of the present invention; Because go on foot of the prior art last three: hydrofluoric acid treatment, washed with de-ionized water and drying are incorporated in the same chemical tank carries out; Make wafer before drying, remain in the aqueous solution always; Put into solution after can effectively avoiding wafer taken out again and in the formation of the washmarking defective that transport process caused, technical process is simple, easy to control from the aqueous solution.
Should be pointed out that foregoing is enumerating of preferred forms of the present invention, the part of wherein not describing in detail to the greatest extent is construed as with the general fashion in present technique field and implements.Simultaneously, for one of ordinary skill in the art, in not departing from spiritual category of the present invention,, all will fall within the protection range of claim of the present invention equivalent transformation and modification that the present invention did.
Claims (4)
1. a wafer cleaning method that effectively reduces the washmarking defective is used for the cleaning of epitaxial silicon or epitaxial Germanium silicon growth wafer before, it is characterized in that, comprises the steps:
Step S1: in chemical tank one with SC1 solution clean wafers;
Step S2: in chemical tank two with the SC1 solution of deionized water clean wafers remained on surface;
Step S3: in chemical tank three with SC2 solution clean wafers;
Step S4: in chemical tank four with the SC2 solution of deionized water clean wafers remained on surface;
Step S5: in chemical tank five, at first use the hydrofluoric acid treatment wafer, remove the residual hydrofluoric acid solution of wafer surface with deionized water overflow mode then, the said wafer of final drying.
2. the method for claim 1 is characterized in that, the concentration of the hydrofluoric acid solution of using among the said step S5 is 0.15%-2%, and temperature is 23 ℃-30 ℃.
3. the method for claim 1 is characterized in that, the flow velocity of the deionized water of using among said step S2, step S4 and the step S5 is 20L/Min-80L/Min.
4. the method for claim 1 is characterized in that, among the said step S5 with the dry said wafer of IPA.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101834488A CN102427020A (en) | 2011-07-01 | 2011-07-01 | Wafer cleaning method capable of effectively reducing water mark defect |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101834488A CN102427020A (en) | 2011-07-01 | 2011-07-01 | Wafer cleaning method capable of effectively reducing water mark defect |
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| CN102427020A true CN102427020A (en) | 2012-04-25 |
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| CN2011101834488A Pending CN102427020A (en) | 2011-07-01 | 2011-07-01 | Wafer cleaning method capable of effectively reducing water mark defect |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103871850A (en) * | 2014-03-31 | 2014-06-18 | 上海华力微电子有限公司 | Method for reducing e-SiGe lattice imperfections in PMOS manufacturing process |
| CN106206247A (en) * | 2015-05-25 | 2016-12-07 | 宁波时代全芯科技有限公司 | The method of clean semiconductor components |
| CN112474550A (en) * | 2020-09-21 | 2021-03-12 | 北京镓族科技有限公司 | Cleaning method for gallium oxide wafer after CMP |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196465A (en) * | 1992-12-24 | 1994-07-15 | Kawasaki Steel Corp | Semiconductor wafer cleaning device |
| CN1182281A (en) * | 1996-11-11 | 1998-05-20 | 三菱电机株式会社 | Device of cleaning semiconductor material |
| US5853491A (en) * | 1994-06-27 | 1998-12-29 | Siemens Aktiengesellschaft | Method for reducing metal contamination of silicon wafers during semiconductor manufacturing |
| KR20070091397A (en) * | 2006-03-06 | 2007-09-11 | 주식회사 하이닉스반도체 | Method for cleaning wafer |
-
2011
- 2011-07-01 CN CN2011101834488A patent/CN102427020A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196465A (en) * | 1992-12-24 | 1994-07-15 | Kawasaki Steel Corp | Semiconductor wafer cleaning device |
| US5853491A (en) * | 1994-06-27 | 1998-12-29 | Siemens Aktiengesellschaft | Method for reducing metal contamination of silicon wafers during semiconductor manufacturing |
| CN1182281A (en) * | 1996-11-11 | 1998-05-20 | 三菱电机株式会社 | Device of cleaning semiconductor material |
| KR20070091397A (en) * | 2006-03-06 | 2007-09-11 | 주식회사 하이닉스반도체 | Method for cleaning wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103871850A (en) * | 2014-03-31 | 2014-06-18 | 上海华力微电子有限公司 | Method for reducing e-SiGe lattice imperfections in PMOS manufacturing process |
| CN103871850B (en) * | 2014-03-31 | 2017-07-25 | 上海华力微电子有限公司 | The method that e SiGe lattice defects are reduced in PMOS manufacturing process |
| CN106206247A (en) * | 2015-05-25 | 2016-12-07 | 宁波时代全芯科技有限公司 | The method of clean semiconductor components |
| CN112474550A (en) * | 2020-09-21 | 2021-03-12 | 北京镓族科技有限公司 | Cleaning method for gallium oxide wafer after CMP |
| CN112474550B (en) * | 2020-09-21 | 2022-04-05 | 北京铭镓半导体有限公司 | Cleaning method for gallium oxide wafer after CMP |
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Application publication date: 20120425 |