CN106206247A - The method of clean semiconductor components - Google Patents
The method of clean semiconductor components Download PDFInfo
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- CN106206247A CN106206247A CN201510270940.7A CN201510270940A CN106206247A CN 106206247 A CN106206247 A CN 106206247A CN 201510270940 A CN201510270940 A CN 201510270940A CN 106206247 A CN106206247 A CN 106206247A
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- Prior art keywords
- rinse bath
- chemical solution
- semiconductor element
- semiconductor components
- clean
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Abstract
A kind of method of clean semiconductor components comprises: semiconductor element is inserted a rinse bath of a cleaning machine, and is passed through chemical solution to rinse bath；It is continually fed into deionized water to rinse bath, makes in rinse bath the lowering of concentration of chemical solution to a predetermined concentration；And when the predetermined concentration of chemical solution is less than 0.02ppm, from rinse bath, take out semiconductor element.Above-mentioned cleaning method is it can be avoided that form washmarking in semiconductor component surfaces, and shortens scavenging period and reduce deionized water and the consumption of the energy.
Description
Technical field
The present invention is a kind of method about clean semiconductor components, a kind of avoids the formation of the clear of washmarking
The method washing semiconductor element.
Background technology
Semiconductor element the most often needs just to carry out follow-up semiconductor technology, example through over cleaning
As washed away the oxide of finished surface with Fluohydric acid. (HF).A kind of method of known clean semiconductor components is
First semiconductor element (such as wafer) is placed in one first rinse bath with hydrofluoric acid clean.Then, by quasiconductor
Element moves to one second rinse bath and washes away Fluohydric acid. with deionized water (deionized water), finally does
Dry.But, by semiconductor element during the first rinse bath moves to the second rinse bath, semiconductor element
The liquid on part surface easily evaporates and forms washmarking, even if also not allowing with deionized water rinsing at the second rinse bath
Easily removing washmarking, the yield thus resulting in subsequent technique reduces.
In order to reduce the time of semiconductor element and air contact, another kind of known clean semiconductor components
Method is that semiconductor element is placed in same rinse bath, is first passed through hydrofluoric acid clean, is then continually fed into a large amount of
Deionized water, to wash away Fluohydric acid., is finally dried.The known time with deionized water rinsing Fluohydric acid. is big
In 300 seconds, even 600 seconds, to guarantee not have Fluohydric acid. to remain.But, even if long-time with deionization
Water rinses, and semiconductor element still can form washmarking.
In view of this, a kind of method proposing clean semiconductor components avoiding the formation of washmarking is that current pole needs
The target made great efforts.
Summary of the invention
The present invention provides a kind of method of clean semiconductor components, and it is to be less than in the concentration of chemical solution
Take out semiconductor element during one predetermined concentration, reduce semiconductor element with liquid contact time to avoid
Impurity in rinse bath is again adsorbed in semiconductor element and forms washmarking.
The method of the clean semiconductor components of one embodiment of the invention comprises: inserted by semiconductor element
One rinse bath of one cleaning machine, and it is passed through chemical solution to rinse bath, make chemical solution cover half
One cleaning surface of conductor element；It is continually fed into deionized water to rinse bath, makes chemical solution in rinse bath
The lowering of concentration of liquid is to a predetermined concentration；And at the predetermined concentration of chemical solution less than 0.02ppm
Time, from rinse bath, take out semiconductor element.
Below by the accompanying drawing elaborate appended by specific embodiment cooperation, when being easier to understand the present invention
Purpose, technology contents, feature and effect of being reached thereof.
Accompanying drawing explanation
Fig. 1 is a flow chart, the method for the clean semiconductor components of display one embodiment of the invention.
Fig. 2 is a flow chart, the method for the clean semiconductor components of display one embodiment of the invention.
Fig. 3 is a schematic diagram, the concentration change of the chemical solution in display rinse bath.
Detailed description of the invention
Hereinafter will be described various embodiments of the present invention, and coordinate accompanying drawing illustratively.Except these are detailed
Outside explanation, the present invention also can be performed in other embodiment widely, any described embodiment
Substitute easily, revise, equivalence change is intended to be included within, and is as the criterion with claim.
In the description of description, in order to make reader have more completely understanding to the present invention, it is provided that many special
Determine details；But, the present invention may be on the premise of clipped or whole specific detail, still can be real
Execute.Moreover, it is well known that step or element be not described in details, to avoid shape of the present invention
Become unnecessary restriction.In accompanying drawing, same or similar element will represent with same or like symbol.
It is specifically intended that accompanying drawing only signal is used, size that not representation element is actual or quantity, have
A little details may be drawn the most completely, succinct in the hope of accompanying drawing.
Refer to Fig. 1, with the method that the clean semiconductor components of one embodiment of the invention is described.First
First, semiconductor element is inserted a rinse bath (S10) of a cleaning machine.In an embodiment,
Semiconductor element can be a wafer or a glass substrate.For example, wafer can be a Silicon Wafer；Glass
Glass substrate can be the substrate of liquid crystal indicator.Then, chemical solution it is passed through to the cleaning of cleaning machine
Groove (S20), makes chemical solution cover a cleaning surface of semiconductor element.In one embodiment, change
Learning solution can be a hydrofluoric acid solution.For example, the Fluohydric acid. in chemical solution and deionized water
Volumetric ratio is between 1:1200 to 1:1.In another embodiment, chemical solution can be Fluohydric acid. and salt
The solution of acid.It is understood that the execution sequence of step S10 and step S20 is contrary or simultaneously
Perform also to realize the purpose of the present invention.
The cleaning surface of semiconductor element is contacted with chemical solution, partly can lead by chemical solution cleans
The cleaning surface of body member.It is understood that disturbance chemical solution can increase the clear of semiconductor element
Wash effect.For example, when semiconductor element immerses chemical solution, ultrasound (Megasonic) is imported
Or bubble to rinse bath can promote that chemical solution disturbance promotes cleaning performance.
Then, it is passed directly into deionized water to rinse bath (S30), makes the solution overflow in rinse bath,
Chemical solution in rinse bath is i.e. by pure dilution, and concentration is gradually lowered.When the chemical solution in rinse bath
When the lowering of concentration of liquid is to a predetermined concentration, from rinse bath, i.e. take out semiconductor element.For example,
Judge that the concentration of chemical solution whether less than 0.02ppm (S40), is the most then taken out from rinse bath
Semiconductor element (S50).If it is not, then return to step S30, it is continually fed into deionized water to rinse bath.
According to above-mentioned steps, when the chemical concentrations in rinse bath drops to predetermined concentration, i.e. from cleaning
Groove takes out semiconductor element and can reduce the time of contact of semiconductor element and the liquid in rinse bath, enter
And the impurity in rinse bath can be avoided again to be adsorbed to the surface of semiconductor element and form washmarking.Must be special
Not mentionleting alone bright, the spirit of the present invention is partly led with rinsing with deionized water long-time (300 to 600 seconds)
The known method of body member is entirely different.
Refer to Fig. 2, with the method that the clean semiconductor components of another embodiment of the present invention is described, its
In, the step of label identical with Fig. 1 as hereinbefore, does not repeats them here.With the reality shown in Fig. 1
Executing example to compare, the difference of the two is that the embodiment shown in Fig. 2 further includes step S41, that is cleans
When the concentration of the chemical solution in groove is less than predetermined concentration (0.02ppm), first it is passed through deionized water to clearly
Washing trough continues a scheduled time (S41), the most just takes out semiconductor element from rinse bath.According to this
The spirit of invention, in one embodiment, is continually fed into the scheduled time suggestion of deionized water less than 60
Second.
It is understood that when with deionized water rinsing semiconductor element, such as Fig. 1 and Fig. 2
Step S41 shown in shown step S30 and Fig. 2, in order to shorten semiconductor element and rinse bath
In time of contact of liquid, being passed through deionized water to rinse bath is with the maximum designed by cleaning machine
Flow velocity performs.In one embodiment, deionized water it is passed through to rinse bath until taking out semiconductor element
The process time less than 120 seconds.It is understood that the deionized water flow velocity being passed through rinse bath is the biggest,
The overall time rinsed is the shortest, and for reducing the residual of washmarking, the time that preferably processes was less than 60 seconds.
Refer to Fig. 3, with the method for the clean semiconductor components of the explanation foundation present invention, in rinse bath
The concentration change of chemical solution.Clean period T1 first, i.e. perform step S10 and S20
Time, the concentration of the chemical solution in rinse bath is i.e. about the concentration of the chemical solution being passed through.Real one
Executing in example, the Fluohydric acid. in chemical solution is 1:100 with the volumetric ratio of deionized water.Clean second
Period T2, when i.e. performing step S30, the concentration of the chemical solution in rinse bath is then along with being passed through
The time of ionized water increases and reduces, until the concentration of the chemical solution in rinse bath arrives predetermined concentration
(such as 0.02ppm) i.e. takes out semiconductor element.The change in period T3, i.e. rinse bath is cleaned the 3rd
Learn the concentration of solution less than after predetermined concentration, be continually fed into deionized water to rinse bath, that is Fig. 2 institute
Step S41 shown.Owing to the concentration of the chemical solution in rinse bath is the lowest, therefore clear the 3rd
When washing period T3, the concentration change of the chemical solution in rinse bath is less.In one embodiment, with
The Peak Flow Rate of existing cleaning machine is passed through the hydrofluoric acid solution of the above-mentioned concentration of deionized water rinsing, the
Two clean period T2 and the 3rd cleans the times sum total of period T3 and should be less than 120 seconds, preferably
The process time is less than 60 seconds.If the time that the second cleaning period T2 and the 3rd cleans period T3 is big
I.e. there is washmarking to be slightly formed at the surface of semiconductor element in 150 seconds.As it was previously stated, the 3rd cleans the phase
Between T3 (i.e. step S41) be dispensed with.
Summary, the method for the clean semiconductor components of the present invention is the chemical solution in rinse bath
Concentration less than a predetermined concentration time take out semiconductor element, connect with liquid reducing semiconductor element
The time of touching.So, the impurity in rinse bath can be avoided again to be adsorbed in semiconductor element and form washmarking.
Additionally, time and the energy resource consumption of cleaning also can be reduced, and then reduce overall manufacturing cost.
Embodiment described above is only the technological thought for the explanation present invention and feature, and its purpose makes
Those skilled in the art will appreciate that present disclosure and implements according to this, when can not with restriction
The scope of the claims of the present invention, the most generally changes according to the equalization that disclosed spirit is made or repaiies
Decorations, must contain in the scope of the claims of the present invention.
Symbol description
S10～S50 step
During T1 first cleans
During T2 second cleans
During T3 the 3rd cleans
Claims (10)
1. the method for a clean semiconductor components, it is characterised in that comprise:
Semiconductor element is inserted a rinse bath of a cleaning machine, and it is clear to this to be passed through a chemical solution
Washing trough, makes this chemical solution cover a cleaning surface of this semiconductor element；
It is continually fed into deionized water to this rinse bath, makes in this rinse bath the lowering of concentration of this chemical solution to one
Predetermined concentration；And
When this predetermined concentration of this chemical solution is less than 0.02ppm, from this rinse bath, take out this quasiconductor
Element.
2. the method for clean semiconductor components as claimed in claim 1, it is characterised in that further include:
When this predetermined concentration of this chemical solution is less than 0.02ppm, it is passed through deionized water and holds to this rinse bath
After the continuous scheduled time, taking out this semiconductor element from this rinse bath, wherein this scheduled time is less than 60
Second.
3. the method for clean semiconductor components as claimed in claim 1, it is characterised in that be passed through deionization
Water is to this rinse bath to taking out the process time of this semiconductor element less than 120 seconds.
4. the method for clean semiconductor components as claimed in claim 1, it is characterised in that be passed through deionization
Water to this rinse bath is to perform with the Peak Flow Rate of this cleaning machine.
5. the method for the clean semiconductor components as described in claim 3 or 4, it is characterised in that this chemistry
When solution covers this cleaning surface of this semiconductor element, this chemical solution of disturbance is to increase cleaning performance.
6. the method for clean semiconductor components as claimed in claim 5, it is characterised in that this chemistry of disturbance
Solution is to import ultrasound or bubble to be realized to this rinse bath.
7. the method for clean semiconductor components as claimed in claim 1, it is characterised in that this chemical solution
Comprise Fluohydric acid., and the volumetric ratio of this Fluohydric acid. and deionized water is between 1:1200 to 1:1.
8. the method for clean semiconductor components as claimed in claim 7, it is characterised in that further include:
When this predetermined concentration of this chemical solution is less than 0.02ppm, it is passed through deionized water and continues one pre-to this rinse bath
After fixing time, taking out this semiconductor element from this rinse bath, wherein this scheduled time is less than 60 seconds.
9. the method for clean semiconductor components as claimed in claim 7, it is characterised in that be passed through deionization
Water is to this rinse bath to taking out the process time of this semiconductor element less than 120 seconds.
10. the method for clean semiconductor components as claimed in claim 1, it is characterised in that this chemical solution
Comprise Fluohydric acid. and hydrochloric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510270940.7A CN106206247A (en) | 2015-05-25 | 2015-05-25 | The method of clean semiconductor components |
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|---|---|---|---|
| CN201510270940.7A CN106206247A (en) | 2015-05-25 | 2015-05-25 | The method of clean semiconductor components |
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| CN106206247A true CN106206247A (en) | 2016-12-07 |
Family
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Effective date of registration: 20170609 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co., Ltd. Applicant after: Jiangsu times core semiconductor Co., Ltd. Applicant after: The British Vigin Islands manufacturer epoch Quan Xin Science and Technology Ltd. Address before: 315000 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: Ningbo epoch Quan Xin Science and Technology Ltd. Applicant before: The British Vigin Islands manufacturer epoch Quan Xin Science and Technology Ltd. |
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