CN106373862A - Processing method applicable to wet cleaning of heterojunction cell - Google Patents
Processing method applicable to wet cleaning of heterojunction cell Download PDFInfo
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- CN106373862A CN106373862A CN201510442676.0A CN201510442676A CN106373862A CN 106373862 A CN106373862 A CN 106373862A CN 201510442676 A CN201510442676 A CN 201510442676A CN 106373862 A CN106373862 A CN 106373862A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a processing method applicable to surface wet cleaning when a silicon-based heterojunction cell is manufactured. After damage layer removal, SC1 pre-cleaning and an etching process, a cleaning sequence of SC2>SC1>HF>HNO3/HF>HF is adopted, the SC2 solution is rich in HCL, an alkaline solution carried in the case of silicon wafer surface etching can be neutralized, K ions or Na ions can be effectively removed, the SC1 solution can remove organic components carried on the surface of the silicon wafer, and the organic components are mainly from organic additives from an etching solution. In view of problems that the current known cleaning method in the case of single-crystal heterojunction cell manufacturing can not completely remove organic residues and metal ions on the surface of the silicon wafer and the surface roughness is improved, through reasonably designing the cleaning sequence after etching and optimizing the process parameters of each cleaning step, mutual interference among the SC1, the SC2 and the HNO3/HF in main cleaning steps can be eliminated, and the cleanliness and the smoothness of the surface of the silicon wafer after cleaning can be effectively improved.
Description
Technical field
The present invention relates to crystal silicon solar energy battery field, more particularly, to one kind are suitable to monocrystalline hetero-junctions electricity
The processing method of pond piece wet-cleaning.
Background technology
The manufacturing process of crystal silicon solar energy battery is intended to the surface to silicon chip first and carries out at matte
Reason.Typically first remove the surface damage layer causing because of cutting, then again matte is carried out to surface
Process and suitable surface clean is it is therefore an objective to reduce the reflection of incident illumination, go the removal of impurity, increase silicon chip
Absorbing thus improving the short circuit current of solar battery sheet to incident illumination.
Pn-junction in monocrystalline silicon heterojunction cell piece is on silicon chip surface after cleaning, by plasma
The method of body assistant chemical vapor deposition generates intrinsic amorphous silicon and the transoid amorphous that thickness is about 10nm
Silicon thin film composite bed, will cover one layer of p-type amorphous silicon membrane to form pn on n-type silicon substrate
Knot, is intrinsic amorphous silicon thin film between n-type silicon chip substrate and p-type amorphous silicon membrane, this layer
For the surface of silicon chip after passivation cleaning, reduce surface recombination center, improve the electricity of solar battery sheet
Learn performance, it requires the recombination-rate surface after passivation to be less than 5cm/s, so the cleanliness factor of silicon chip surface
It is one of key factor of impact intrinsic amorphous silicon thin film and silicon chip substrate interface quality.Therefore making
Monocrystalline silicon heterojunction cell piece, the processing requirement to silicon chip surface is different from the tradition using diffusion method
Monocrystalline silicon battery, the especially control to silicon chip surface cleanliness factor and roughness are the most key.Monocrystal silicon
After piece making herbs into wool, differed by size in surface, closely coupled pyramid is constituted.Formed pyramidal four little
The surface roughness of plane is typically all higher, and pinnacle of a pagoda and the lowest point are also very sharp, road after affecting
The flatness of pecvd amorphous silicon membrane deposition, wherein four faceted roughness can increase follow-up magnetic
The crystal boundary of the transparent conductive film of control sputtering sedimentation.After cell piece is fabricated to assembly, make through for a long time
With, the grain boundary decision that the sodium ion in glass can gradually pass through transparent conductive film enters inside silicon chip,
The performance of impact battery, thus affect the reliability of assembly.
One of cleaning method of making monocrystalline hetero-junction solar cell piece being currently known is [1]:
sc2>hf>hno3The processing method of/hf > sc1 > hf, using sc2 > hf > hno3/hf>sc1>hf
Cleaning sequence to silicon chip through hno3After surface smoothing processing in/hf solution, then carry out through sc1
Smooth surface before surface clean meeting roughening.The sc1 of second > sc2 > hf > hno3/hf>hf
Cleaning sequence [2], silicon chip process through alkaline making herbs into wool solution after surface be rich in k or na ion, these
Ion is difficult to get rid of in subsequently alkaline sc1 solution, because sc1 is inherently alkaline solution.
As shown in figure 1, prior art typically adopts the cleaning of sc2 > hf > hno3/hf > sc1 > hf
Sequentially, the method is through hno in silicon chip3After surface smoothing processing in/hf solution, then through sc1
The smoothed surface before carrying out surface clean meeting roughening of solution.This is primarily due to the alkali in sc1
Property material nh4Oh can play the role of microcorrosion to the surface of silicon chip.
As shown in Fig. 2 another kind of cleaning of prior art adopts sc1 > sc2 > hf > hno3/hf>hf
Cleaning sequence, the defect of the method be after silicon chip is processed through alkaline making herbs into wool solution surface be rich in k or
Na ion, these ions are difficult in subsequently alkaline sc1 cleaning solution, that is, be difficult in nh4Oh's
Get rid of in solution, because of nh4Oh itself is in alkalescence.
Content of the invention
For the problems referred to above, the invention provides a kind of Organic substance that can effectively remove silicon chip surface,
Metal ion, and reduce the process side of the monocrystalline hetero-junction solar cell piece wet-cleaning of silicon chip surface roughness
Method.
For solving above-mentioned technical problem, the technical solution adopted in the present invention is: it is different that one kind is suitable to monocrystalline
The processing method of matter junction battery piece wet-cleaning, the treating method comprises: step 1, puts into silicon chip
Carry out in alkaline solution damaging layer process, then deionized water rinsing；Step 2, by step (1)
Remove the silicon chip after damaging layer and carry out prerinse with sc1 solution, then deionized water rinsing；Step
3rd, the silicon chip of step (2) is put in alkaline solution and the mixed solution of flocking additive and carries out making herbs into wool,
Then deionized water rinsing；Step 4, the silicon chip of step (3) is carried out with sc2 solution,
Then deionized water rinsing；Step 5, the silicon chip of step (4) is carried out with sc1 solution,
Then deionized water rinsing；Step 6, the silicon chip of step (5) is carried out with hf acid solution,
Then deionized water rinsing；Step 7, the silicon chip of step (6) is thrown with acidic mixed solution
Photoetch, then deionized water rinsing；Step 8, by the silicon chip hf acid solution of step (7)
It is carried out, then deionized water rinsing；Step 9, the silicon chip of step (8) is lifted dehydration slowly,
Then dried with nitrogen.
Further, the described alkaline solution of step (1) is one of koh or naoh, quality
Percentage ratio is 3%-10%, and deionized water quality percentage ratio is 90%-97%, and silicon chip is molten in described alkalescence
Liquid process time is 1-5 minute, and treatment temperature is 70 DEG C -90 DEG C, and described silicon slice corrosion depth is
5-20um.
Further, the sc1 solution in described step (2) and step (5) is alkaline h2o2Solution,
Wherein ammonia mass percent is 1%-6%, and hydrogen peroxide mass percent is 4%-8%, deionized water
Amount percentage ratio is 86%-95%, and described silicon chip is in alkaline h2o2Process time in solution is divided for 5-10
Clock, treatment temperature is 65 DEG C -80 DEG C.
Further, the alkaline solution used by the making herbs into wool of described step (3) is in koh or naoh
One kind, wherein mass percent are 0.5%-3%, and silicon chip making herbs into wool time in alkaline solution is 15-40
Minute, treatment temperature is 75 DEG C -85 DEG C.
Further, the sc2 solution in described step (4) is acid h2o2Solution, wherein hydrochloric acid
Mass percent is 2%-8%, and hydrogen peroxide mass percent is 1%-5%, deionized water quality percentage ratio
For 87%-97%, treatment temperature is 65 DEG C -80 DEG C, process time is 5-10 minute.
Further, the hf acid mass percent in described step (6) and step (8) is 1%-8%,
Deionized water quality percentage ratio is 92%-99%, and process time in hf acid solution for the silicon chip is 1-6
Minute, treatment temperature is 20 DEG C -30 DEG C.
Further, the acid solution in described step (7) is hno3With the mixed solution of hf,
hno3Mass percent is 30%-50%, and hf mass percent is 1%-3%, deionized water quality hundred
Divide ratio for 47%-69%, silicon chip is in hno3Mixed solution process time with hf is 1-5 minute, place
Reason temperature is 5 DEG C -20 DEG C.
Compared to the prior art, the present invention has the advantage that present invention order is reasonable, for tradition
The organic residual of silicon chip surface can not be removed completely in monocrystalline heterojunction solar battery making herbs into wool cleaning method
Remaining, the problems such as metal ion, using sc2, sc1, hno3/ hf, the cleaning method of hf, pass through
Cleaning order reasonable in design, can more effectively remove Organic substance, the metal ion of silicon chip surface,
And can most effectively reduce the roughness of silicon chip surface.The present invention silicon chip carried out remove damage layer,
Sc2 is adopted after sc1 prerinse, making herbs into wool operation > sc1 > hf > hno3The cleaning sequence of/hf > hf, because
Sc2 is acid h2o2Solution, and sc2 solution is rich in hcl, sc2 solution can neutralize silicon wafer wool making
When the alkaline solution that remained.Sc1 solution can remove the organic principle entrained by silicon chip surface.Subsequently
hno3/ hf can be smoothened by coarse surface to the surface treatment of silicon chip, last hno3Oxidation
Silicon chip surface forms very thin oxide layer, and this oxide layer can be in the dilute hydrofluoric acid solution of final step
Remove, the silicon chip surface very high to reach cleanliness factor.
Brief description
The accompanying drawing constituting the part of the application is used for providing a further understanding of the present invention, the present invention
Schematic description and description be used for explaining the present invention, do not constitute inappropriate limitation of the present invention.
In the accompanying drawings:
Fig. 1 is a kind of process chart of existing monocrystalline hetero-junctions making herbs into wool cleaning.
Fig. 2 is another kind of process chart of existing monocrystalline hetero-junctions making herbs into wool cleaning.
Fig. 3 is the process chart of processing method of the present invention.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with accompanying drawing
And embodiment, the present invention will be described in further detail.It should be appreciated that it is described herein concrete
Embodiment only in order to explain the present invention, is not intended to limit the present invention.
Embodiment
As shown in figure 3, a kind of the invention provides process side being suitable to hetero-junction solar cell piece wet-cleaning
Method, the treating method comprises: step 1, silicon chip is put into carry out in alkaline solution damage layer process,
Then deionized water rinsing；Step 2, by step (1) remove damage layer after silicon chip sc1 solution
Carry out prerinse, then deionized water rinsing；Step 3, the silicon chip of step (2) is put into alkalescence
Carry out making herbs into wool, then deionized water rinsing in the mixed solution of solution and flocking additive；Step 4,
The silicon chip of step (3) is carried out with sc2 solution, in neutralization procedure (2), step 3
Alkali liquor remains, then deionized water rinsing；Step 5, by the silicon chip sc1 solution of step (4)
It is carried out, for removing Organic substance and the part metals impurity of residual, then deionized water rinsing；
Step 6, the silicon chip of step (5) is carried out with hf acid solution, for remove oxide and its
The impurity of attachment, then deionized water rinsing；Step 7, will step (6) silicon chip with acid mixed
Close solution to be polished corroding, then deionized water rinsing；Step 8, by the silicon chip of step (7)
It is carried out with hf acid, then deionized water rinsing；Step 9, will be slow for the silicon chip of step (8)
Lifting dehydration, is then dried with nitrogen.
Alkaline solution described in step (1) is one of koh or naoh, described alkaline solution
Mass percent is 3%-10%, and deionization mass percent is 90%-97%, and silicon chip is in alkaline solution
Process time is 1-5 minute, and treatment temperature is 70 DEG C -90 DEG C, and silicon slice corrosion depth is 5-20um.
Sc1 solution in step (2) and step (5) is alkaline h2o2Solution, wherein ammonia quality
Percentage ratio is 1-6%, and hydrogen peroxide mass percent is 4-8%, and deionized water quality percentage ratio is
86%-95%, silicon chip is in alkaline h2o2In solution, process time is 5-10 minute, and treatment temperature is
65℃-80℃.
Wherein above-mentioned sc1 solution is alkaline h2o2Solution is also referred to as apm cleanout fluid, is mainly used in removing
The granule of silicon chip surface, in sc1 cleanout fluid, due to h2o2Effect, silicon chip surface has one layer of nature
Oxide-film (sio2), in hydrophilic, between silicon chip surface and particle, available cleanout fluid is impregnated with, silicon chip surface
Natural oxide film and silicon by nh4Oh corrodes, and the particle of silicon chip surface just falls in cleanout fluid.Particle
Clearance relevant with the etching extent of silicon chip surface, for remove particle it is necessary to carry out a certain amount of corrosion.
In sc1 cleanout fluid, because the current potential of silicon chip surface is negative, all there is repulsion and between most of particle
Power is it is therefore prevented that particle adsorbs to silicon chip surface.
Alkaline solution used by the making herbs into wool of described step (3) is one of koh or naoh, wherein
The mass percent of koh or naoh is 0.5%-3%, and treatment temperature is 75 DEG C -85 DEG C, silicon chip exists
In alkaline solution, the making herbs into wool time is 15-40 minute.
Sc2 solution in step (4) is acid h2o2Solution, wherein hydrochloric acid mass percent is
2%-8%, hydrogen peroxide mass percent is 1%-5%, and deionized water quality percentage ratio is 87%-97%,
Treatment temperature is 65 DEG C -80 DEG C, process time is 5-10 minute.
Sc2 solution is alkaline h2o2Solution, is mainly used in removing the metal contamination of silicon chip surface.sc2
Solution, because having metal such as cu, ag, the au higher than the elecrtonegativity of silicon, captures electronics in silicon from silicon face
Surface directly forms chemical bond.The solution also with higher oxidation-reduction potential can obtain from these metals
Electronics, thus leading to metal to dissolve in the solution in the form of ionizing, make such metal from
Silicon chip surface is removed.As fe, ni, cr, al, ca, na, k can easily ions in the solution
Change and be deposited on natural oxide film or the chemical oxide film of silicon chip surface.These metals are in dilute hf solution
In easily can remove with natural oxide film or chemical oxide film.
The acid mass percent of hf described in step (6) and step (8) is 1%-8%, deionized water
Mass percent is 92%-99%, and silicon chip process time in hf acid solution is 1-6 minute, processes temperature
Spend for 20 DEG C -30 DEG C.
Acid solution in step (7) is hno3Acid and the mixed solution of hf acid, hno3Quality hundred
Divide than being 30%-50%, hf mass percent is 1%-3%, deionized water quality percentage ratio is
47%-69%, silicon chip is in hno3The mixed solution process time of acid and hf acid is 1-5 minute, processes
Temperature is 5 DEG C -20 DEG C.
The cleaning sequence being adopted compared to Fig. 1, Fig. 2.As shown in figure 3, the present invention is using in silicon chip
Carried out damaging layer, sc1 prerinse, adopted sc2 after making herbs into wool operation sc1 > hf > hno3/hf>hf
Cleaning sequence, because sc2 is acid h2o2Solution, and sc2 solution is rich in hcl, sc2 solution
The alkaline solution that silicon chip surface making herbs into wool is remained can be neutralized.Because the alkaline solution used by making herbs into wool be koh or
One of naoh, so sc2 solution is mainly used in neutralization removes k or na ion.
Above-mentioned sc1 solution is alkaline h2o2Solution, is used for removing entrained by silicon chip surface in this step
Organic principle, organic principle mostlys come from contained organic additive in Woolen-making liquid.Sc1 solution
Place comprehend the surface of microcorrosion silicon chip, so the attachment on surface can be got rid of effectively.
Above-mentioned sc2 as shown in Figure 1 > hf > hno3Mention in the cleaning sequence of/hf > sc1 > hf, according to
The method is carried out, and silicon chip is through hno3After surface smoothing processing in/hf solution, then through sc1
Smoothed surface before cleaning meeting roughening.So the present invention subsequently adopts hno3/ hf is to silicon chip
Surface treatment can be smoothened by coarse surface.Sc1 solution can remove entrained by silicon chip surface
Organic principle.Because of hno3Itself has strong oxidizing property, can form very thin oxidation in silicon chip surface
Layer, this oxide layer can be got rid of in final step dilute hydrofluoric acid solution, very high to reach cleanliness factor
Silicon chip surface.Between 1000a-1um, corrosion depth depends on further corrosion depth general control
The pyramid size that silicon chip surface is formed after making herbs into wool.
The present invention has carried out removing in silicon chip and damages layer, sc1 prerinse, after making herbs into wool operation, uses sc2
In solution and the alkaline solution that left behind of sc1 prerinse and making herbs into wool, now silicon chip surface has residual
Organic and part metals impurity, the presence of the Organic substance of this residual and part metals impurity, can be allowed to
The pn-junction quality being formed after plated film afterwards can be severely impacted.The formation of pn-junction is clean to silicon chip surface
Cleanliness requirement is very high, so being carried out to silicon chip again with sc1 solution, removes having of residual
Machine thing and part metals impurity.Then it is carried out with hf acid solution, remove oxide and its attachment
Impurity, then deionized water rinsing again.Then carry out etch polishing again, then carried out clearly with hf acid
Wash, remove oxide and be passivated silicon chip surface.Last deionized water rinsing, slow lifting dehydration, so
Dried with nitrogen afterwards.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all
Any modification, equivalent and improvement of being made within the spirit and principles in the present invention etc., all should comprise
Within protection scope of the present invention.
Claims (7)
1. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning is it is characterised in that described process side
Method includes:
Step 1, silicon chip is put into carry out in alkaline solution damage layer process, then deionized water
Rinsed clean；
Step 2, the silicon chip damaging step (1) removal after layer carry out prerinse with sc1 solution,
Then deionized water rinsing；
Step 3, the silicon chip of step (2) is put in alkaline solution and the mixed solution of flocking additive
Carry out making herbs into wool, then deionized water rinsing；
Step 4, the silicon chip of step (3) is carried out with sc2 solution, then deionized water
Rinsing；
Step 5, the silicon chip of step (4) is carried out with sc1 solution, then deionized water
Rinsing；
Step 6, the silicon chip of step (5) is carried out with hf acid solution, then deionized water
Rinsing；
Step 7, by the silicon chip acidic mixed solution of step (6) be polished corrode, then spend
Ionized water rinses；
Step 8, the silicon chip of step (7) is carried out with hf acid, then deionized water rinsing；
Step 9, the silicon chip of step (8) is lifted dehydration slowly, then dried with nitrogen.
2. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning according to claim 1, its
It is characterised by: the described alkaline solution of step (1) is one of koh or naoh, percent mass
For 3%-10%, deionized water quality percentage ratio is 90%-97% to ratio, and silicon chip is located in described alkaline solution
The reason time is 1-5 minute, and treatment temperature is 70 DEG C -90 DEG C, and silicon slice corrosion depth is 5-20um.
3. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning according to claim 1, its
It is characterised by: the sc1 solution in described step (2) and step (5) is alkaline h2o2Solution, wherein
Ammonia mass percent is 1%-6%, and hydrogen peroxide mass percent is 4%-8%, deionized water quality
Percentage ratio is 86%-95%, and silicon chip is in alkaline h2o2In solution, process time is 5-10 minute, processes temperature
Spend for 65 DEG C -80 DEG C.
4. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning according to claim 1, its
It is characterised by: the alkaline solution used by the making herbs into wool of described step (3) is one of koh or naoh,
Mass percent is 0.5%-3%, and silicon chip making herbs into wool time in alkaline solution is 15-40 minute, processes
Temperature is 75 DEG C -85 DEG C.
5. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning according to claim 1, its
It is characterised by: the sc2 solution in described step (4) is acid h2o2Solution, wherein hydrochloric acid quality hundred
Divide than being 2%-8%, hydrogen peroxide mass percent is 1%-5%, deionized water quality percentage ratio is
87%-97%, treatment temperature is 65 DEG C -80 DEG C, and process time is 5-10 minute.
6. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning according to claim 1, its
It is characterised by: the hf acid mass percent in described step (6) and step (8) is 1%-8%, goes
Ionized water mass percent is 92%-99%, and silicon chip process time in hf acid solution is 1-6 minute,
Treatment temperature is 20 DEG C -30 DEG C.
7. a kind of processing method being suitable to hetero-junction solar cell piece wet-cleaning according to claim 1, its
It is characterised by: the acid solution in described step (7) is hno3With the mixed solution of hf, hno3Matter
Amount percentage ratio is 30%-50%, and hf mass percent is 1%-3%, and deionized water quality percentage ratio is
47%-69%, silicon chip is in hno3It is 1-5 minute with process time in hf acid solution, treatment temperature
5℃-20℃.
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| CN109755118A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | FRGPP chip glass passivation front multiple diffusion technology |
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| CN110943144A (en) * | 2019-11-29 | 2020-03-31 | 晋能清洁能源科技股份公司 | Texturing and cleaning method for heterojunction battery |
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| CN112928185A (en) * | 2021-02-10 | 2021-06-08 | 浙江工业大学 | Preparation method of silicon surface passivation layer |
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| CN109755118A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | FRGPP chip glass passivation front multiple diffusion technology |
| CN108269733A (en) * | 2017-12-19 | 2018-07-10 | 君泰创新（北京）科技有限公司 | A kind of silicon wafer cleaning method |
| CN109742013A (en) * | 2018-12-20 | 2019-05-10 | 天津中环领先材料技术有限公司 | A kind of cleaning method reducing silicon chip back side metal |
| CN110047974A (en) * | 2019-04-23 | 2019-07-23 | 苏州腾晖光伏技术有限公司 | A kind of solar battery cleaning method |
| CN110943144A (en) * | 2019-11-29 | 2020-03-31 | 晋能清洁能源科技股份公司 | Texturing and cleaning method for heterojunction battery |
| CN111554774A (en) * | 2020-04-24 | 2020-08-18 | 中威新能源(成都)有限公司 | Silicon wafer texturing post-treatment method |
| CN112951710A (en) * | 2021-02-01 | 2021-06-11 | 中环领先半导体材料有限公司 | Alkali corrosion process for silicon polished wafer |
| CN112928185A (en) * | 2021-02-10 | 2021-06-08 | 浙江工业大学 | Preparation method of silicon surface passivation layer |
| CN112928185B (en) * | 2021-02-10 | 2023-10-20 | 浙江工业大学 | Preparation method of silicon surface passivation layer |
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