CN110047974A - A kind of solar battery cleaning method - Google Patents
A kind of solar battery cleaning method Download PDFInfo
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- CN110047974A CN110047974A CN201910329152.9A CN201910329152A CN110047974A CN 110047974 A CN110047974 A CN 110047974A CN 201910329152 A CN201910329152 A CN 201910329152A CN 110047974 A CN110047974 A CN 110047974A
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- silicon wafer
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- solar battery
- washed
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- 238000004140 cleaning Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 191
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 191
- 239000010703 silicon Substances 0.000 claims abstract description 191
- 239000003513 alkali Substances 0.000 claims abstract description 42
- 238000005498 polishing Methods 0.000 claims abstract description 33
- 238000012372 quality testing Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 2
- 239000011538 cleaning material Substances 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 30
- 230000000694 effects Effects 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910001510 metal chloride Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- LZQUNGBRQFLSFM-UHFFFAOYSA-N phosphocane Chemical compound C1CCCPCCC1 LZQUNGBRQFLSFM-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of solar battery cleaning methods, comprising: using containing O3Solution prerinse is carried out to silicon wafer, and the silicon wafer after prerinse is washed；Alkali polishing is carried out to silicon wafer, and is washed；Using containing O3Solution the silicon wafer after alkali polishing is cleaned, and silicon wafer is cleaned using the mixed liquor containing HCL and HF；Silicon wafer is washed, and silicon wafer is dried.Above-mentioned technical proposal disclosed in the present application, before carrying out alkali polishing to silicon wafer and after carrying out alkali polishing to silicon wafer, using containing O3Solution silicon wafer is cleaned, due to O3It is easier to obtain, cost ratio KOH+H2O2Mixed liquor is at low cost, therefore, then can reduce the cost cleaned to silicon wafer, and due to O3O is directly generated after the reaction2, then the cleaning materials after cleaning is handled without using special pipeline and container etc., to then can simplify its treatment process, reduces the fussy degree of subsequent processing.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, more specifically to a kind of solar battery cleaning side
Method.
Background technique
PERC (Passivated Emitter and Rear Cell, passivation emitter back-contact cell) is current light
One of the main product of volt in the market, the battery of the type have due to its backside oxide aluminium can provide excellent passivation effect
Higher efficiency and power.
In order to further enhance the efficiency of PERC battery, currently, sour polishing is often replaced by alkali polishing, so that silicon wafer
The back side it is more smooth, and reduce specific surface area, promote the passivation effect of aluminium oxide.Before and after existing alkali polishing process, generally make
With KOH (potassium hydroxide)+H2O2(hydrogen peroxide) mixed liquor cleans silicon wafer, to remove the organic matter of silicon chip surface.But by
In KOH and H2O2It is easily-consumed products, price is relatively high, and subsequent processes are more troublesome, therefore, utilizes KOH+H2O2It is mixed
It closes liquid and clean, treatment process comparatively laborious problem relatively high in the presence of cleaning cost to silicon wafer.
In conclusion how to reduce the cost cleaned before and after alkali polishing process to silicon wafer, and reduce to cleaning materials
The fussy degree of reason is current those skilled in the art technical problem urgently to be resolved.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of solar battery cleaning methods, before reducing alkali polishing process
The cost that silicon wafer is cleaned afterwards, and reduce the fussy degree handled cleaning materials.
To achieve the goals above, the invention provides the following technical scheme:
A kind of solar battery cleaning method, comprising:
Using containing O3Solution prerinse is carried out to silicon wafer, and the silicon wafer after prerinse is washed；
Alkali polishing is carried out to the silicon wafer, and is washed；
Using containing O3Solution to alkali polishing after the silicon wafer clean, and utilize the mixed liquor pair containing HCL and HF
The silicon wafer is cleaned；
The silicon wafer is washed, and the silicon wafer is dried.
Preferably, using containing O3Solution to silicon wafer carry out prerinse, comprising:
Using containing O3HCL solution to the silicon wafer carry out prerinse；
Using containing O3Solution to alkali polishing after the silicon wafer clean, comprising:
Using containing O3HCL solution to alkali polishing after the silicon wafer clean.
Preferably, using containing O3HCL solution the silicon wafer is cleaned, comprising:
Using containing O3HCL solution the silicon wafer is cleaned at 15-30 DEG C.
Preferably, using containing O3HCL solution the silicon wafer is cleaned, comprising:
Utilize O3Concentration is that the solution that 30-90ppm, HCL concentration are 5%-20% cleans the silicon wafer.
Preferably, using containing O3HCL solution to alkali polishing after the silicon wafer clean after, further includes:
The silicon wafer is washed.
Preferably, the silicon wafer is dried, comprising:
The silicon wafer is dried using nitrogen.
Preferably, after being dried to the silicon wafer, further includes:
Quality testing is carried out to the silicon wafer.
Preferably, quality testing is carried out to the silicon wafer, comprising:
Quality testing is carried out to the silicon wafer using metallographic microscope.
The present invention provides a kind of solar battery cleaning methods, comprising: using containing O3Solution silicon wafer is carried out it is pre- clear
It washes, and the silicon wafer after prerinse is washed；Alkali polishing is carried out to silicon wafer, and is washed；Using containing O3Solution to alkali
Silicon wafer after polishing is cleaned, and is cleaned using the mixed liquor containing HCL and HF to silicon wafer；Silicon wafer is washed, and
Silicon wafer is dried.
Above-mentioned technical proposal disclosed in the present application polishes it before carrying out alkali polishing to silicon wafer and carrying out alkali to silicon wafer
Afterwards, using containing O3Solution silicon wafer is cleaned, due to O3It is easier to obtain, cost ratio KOH+H2O2Mixed liquor cost
It is low, therefore, then the cost cleaned to silicon wafer can be reduced, and due to O3O is directly generated after the reaction2, then without using
Special pipeline and container etc. handle the cleaning materials after cleaning, to then can simplify its treatment process, after reduction
The fussy degree of continuous processing.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow chart of solar battery cleaning method provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It, can be with it illustrates a kind of flow chart of solar battery cleaning method provided in an embodiment of the present invention referring to Fig. 1
Include:
S11: using containing O3Solution prerinse is carried out to silicon wafer, and the silicon wafer after prerinse is washed.
After the processing such as being diffused to silicon wafer and before carrying out alkali polishing to silicon wafer, since silicon wafer is in transportational process
In may be infected with it is certain dirty, or even can (it plays conveying to silicon wafer to transporting equipment under the remained on surface of silicon wafer
Effect) caused by transport trace, therefore, in order to avoid silicon chip surface institute it is remaining it is dirty and transport trace to alkali polishing cause shadow
It rings, then can use containing O3Solution prerinse is carried out to silicon wafer, and silicon wafer is washed after prerinse.
Due to O3With strong oxidizing property, (its oxidisability is better than H2O2), it therefore, can be by the organic matter etc. of silicon chip surface
Dirty oxygenolysis is at small molecule soluble easily in water, preferably to wash the dirty of silicon chip surface, and due to O3Cost
It is relatively low, therefore, compared to utilize KOH+H2O2Mixed liquor come to silicon wafer carry out prerinse for, then can reduce to silicon wafer into
The prewashed cost of row.In addition, due to O3Mostly after reacting is to directly generate O2, therefore, it is fairly simple, easy to deal with.
Using containing O3Solution prerinse is carried out to silicon wafer after, then silicon wafer mainly washed away to the washing that silicon wafer carries out
Adhering on surface and by O3Small molecule after oxidation, to improve the cleannes of silicon chip surface.
S12: alkali polishing is carried out to silicon wafer, and is washed.
After carrying out prerinse and washing to silicon wafer, then alkali polishing can be carried out to silicon wafer, so that the back side of silicon wafer
It is more smooth, and the specific surface area of silicon wafer is reduced, to prepare to prepare aluminium oxide, to preferably promote the passivation of aluminium oxide
Imitate effect.
Since in alkali polishing process some unnecessary products can be adhered on the surface of silicon wafer, it is thrown to improve alkali
The effect of light improves the cleannes of silicon chip surface, then can first wash to silicon wafer, to wash off some points soluble easily in water
Son.
S13: using containing O3Solution to alkali polishing after silicon wafer clean, and utilize the mixed liquor pair containing HCL and HF
Silicon wafer is cleaned.
Due to that can use some organic matters during carrying out alkali polishing to silicon wafer, and organic matter may be adhered to silicon
Therefore on piece in order to improve the cleannes of silicon chip surface, to improve the performance of subsequent prepared solar battery, then may be used
Using containing O3Solution the silicon wafer after alkali polishing is cleaned, it is dirty with the organic matter that removes silicon chip surface etc..
In view of during being diffused to silicon wafer PSG (Phospho can be formed in the front surface of silicon wafer
Silicate Glass, phosphorosilicate glass) to form protection to the front surface of silicon wafer, alkali throwing is participated in avoid the front surface of silicon wafer
In light, and subsequent in order to normally obtain solar battery, then need to wash off silicon wafer front surface formed in the diffusion process
PSG.In order to preferably wash the PSG of silicon chip surface, then it can use the mixed liquor containing HCL (hydrochloric acid) and HF (hydrofluoric acid)
To be cleaned to silicon wafer, wherein HF can react with PSG, to wash off the PSG that silicon wafer front surface is covered, in HCL
Cl-Water-soluble metal chloride can be formed with the metal ion accompanying by silicon chip surface, silicon wafer is carried out to reach
Clean purpose.
S14: washing silicon wafer, and dries to silicon wafer.
After being cleaned using the mixed liquor containing HCL and HF to silicon wafer, then silicon wafer can be washed, to wash away
The substances such as metal chloride accompanying by silicon chip surface, to improve the cleannes of silicon wafer.
After being washed to silicon wafer, then silicon wafer can be dried, to get rid of the moisture of silicon chip surface, thus
Avoid silicon wafer when transporting next technique to due to moisture by contamination it is upper other are dirty, i.e., drying to silicon wafer can be so as to
In to the subsequent operation of silicon wafer progress.
Conducted in compared with the prior art: KOH+H2O2Mixed liquor cleaning → washing → alkali polishing → washing → KOH+
H2O2Mixed liquor cleaning → washing → HCL cleaning+H2O2Cleaning → washing → HF cleaning → washing → drying, the application are above-mentioned
Cleaning step is fewer, therefore, then can reduce the setting of rinse bath, to can then reduce cleaning cost.And due to O3
Oxidisability it is stronger, therefore, then the cleaning effect to silicon wafer can be improved.In addition, due to O3Cost it is relatively low, subsequent production
The treatment process of object is fairly simple, not can cause environmental pollution, and therefore, then can further decrease cleaning cost, and can be with
Simplify the fussy degree handled cleaning materials, improves cleaning efficiency.
Above-mentioned technical proposal disclosed in the present application polishes it before carrying out alkali polishing to silicon wafer and carrying out alkali to silicon wafer
Afterwards, using containing O3Solution silicon wafer is cleaned, due to O3It is easier to obtain, cost ratio KOH+H2O2Mixed liquor cost
It is low, therefore, then it can reduce the cost cleaned to silicon wafer, and O3Due to directly generating O after the reaction2, then without using
Special pipeline and container etc. handle the cleaning materials after cleaning, so as to simplify its treatment process, reduce subsequent
The trouble degree of processing.
A kind of solar battery cleaning method provided in an embodiment of the present invention, using containing O3Solution silicon wafer is carried out it is pre- clear
It washes, may include:
Using containing O3HCL solution to silicon wafer carry out prerinse；
Using containing O3Solution to alkali polishing after silicon wafer clean, may include:
Using containing O3HCL solution to alkali polishing after silicon wafer clean.
Using containing O3Solution to silicon wafer carry out prerinse when and using contain O3Solution to alkali polishing after silicon wafer
When being cleaned, specifically it can use containing O3HCL solution silicon wafer is cleaned, wherein O not only can be improved in HCL3Molten
Concentration in liquid, to obtain preferable cleaning effect, and Cl included in HCL-It can be with the metal ion of silicon chip surface
Water-soluble metal chloride is formed, to reduce metal ion accompanying by silicon chip surface, i.e. the presence of HCL can be preferably
The metal ion of silicon chip surface is removed, to improve the passivation minority carrier life time of silicon wafer, to improve final prepared solar energy
The photoelectric conversion efficiency of battery.
Show to utilize KOH+H by test2O2Passivation minority carrier life time after mixed liquor cleans silicon wafer is 200 μ s,
And it utilizes and contains O3HCL solution silicon wafer is cleaned after passivation minority carrier life time between 250-300 μ s, i.e., using contain O3's
HCL solution cleans the passivation minority carrier life time that can significantly improve silicon wafer to silicon wafer, final prepared so as to improve
Solar battery transfer efficiency and performance.
A kind of solar battery cleaning method provided in an embodiment of the present invention, using containing O3HCL solution to silicon wafer carry out
It cleans, may include:
Using containing O3HCL solution silicon wafer is cleaned at 15-30 DEG C.
Using containing O3HCL solution when being cleaned to silicon wafer, can directly under room temperature (15-30 DEG C) to silicon wafer into
Therefore row cleaning, then can reduce the cost of rinse bath, reduce to silicon wafer thus without carrying out heating operation to rinse bath
The cost cleaned.
A kind of solar battery cleaning method provided in an embodiment of the present invention, using containing O3HCL solution to silicon wafer carry out
It cleans, may include:
Utilize O3Concentration is that the solution that 30-90ppm, HCL concentration are 5%-20% cleans silicon wafer.
Using containing O3HCL solution when being cleaned at room temperature to silicon wafer, in order to improve the cleaning effect to silicon wafer,
To improve the photoelectric conversion efficiency and performance of subsequent prepared solar battery, then it can use O3Concentration is 30-
90ppm, HCL concentration are that the solution of 5%-20% cleans silicon wafer.Wherein, the concentration of HCL refers specifically to quality percentage
Concentration.
It is of course also possible to be needed according to cleaning and adjust O3And/or the concentration of HCL, to improve cleaning effect.
A kind of solar battery cleaning method provided in an embodiment of the present invention, using containing O3HCL solution to alkali polish
After silicon wafer afterwards is cleaned, can also include:
Silicon wafer is washed.
Using containing O3HCL solution to alkali polishing after silicon wafer clean after, then silicon wafer can be washed,
It is dirty with the small molecule and the metal ion that wash away silicon chip surface etc., then, then it can use the mixed liquor containing HCL and HF to washing
Silicon wafer later is cleaned, and to remove the PSG of silicon chip surface, and further enhances the cleaning dynamics to metal ion, thus
Improve the cleannes of silicon wafer.
A kind of solar battery cleaning method provided in an embodiment of the present invention, dries silicon wafer, may include:
Silicon wafer is dried using nitrogen.
When drying to the silicon wafer after cleaning, nitrogen specifically can use to dry to silicon wafer, with raising pair
The efficiency that silicon wafer is cleaned, and reduce and polluted to brought by silicon wafer.
It is of course also possible to be dried by other modes such as oven dryings to silicon wafer, the application is to silicon chip drying
Mode does not do any restriction.
A kind of solar battery cleaning method provided in an embodiment of the present invention can be with after drying to silicon wafer
Include:
Quality testing is carried out to silicon wafer.
After drying to silicon wafer, quality testing can be carried out to silicon wafer, to detect the effect of alkali polishing, thus just
Classify in the effect polished according to alkali to silicon wafer, i.e., the similar silicon wafer of effect be classified as same class, in order to it is subsequent will
Solar battery prepared by the silicon wafer of the same category is prepared into photovoltaic module, to reduce because solar battery classification is different
Caused by parameter differences, and then improve photovoltaic module performance.
In addition, quality testing is carried out to silicon wafer, it can also be convenient for defect present in discovery silicon wafer in time, and be convenient for timely
The silicon wafer that defect will be present is picked out, and to avoid second-rate solar battery is prepared, i.e., carries out quality inspection to silicon wafer
Survey the yields that can also improve solar battery.
A kind of solar battery cleaning method provided in an embodiment of the present invention carries out quality testing to silicon wafer, may include:
Quality testing is carried out to silicon wafer using metallographic microscope.
When carrying out quality testing to silicon wafer, metallographic microscope specifically can use to carry out quality testing to silicon wafer, with
More meticulously observation silicon wafer whether there is defect, to improve the precision of Si wafer quality detection.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic.?
Do not have in the case where more limiting, the element limited by sentence "including a ...", it is not excluded that including the element
There is also other identical elements in process, method, article or equipment.In addition, above-mentioned technology provided in an embodiment of the present invention
In scheme with correspond to the consistent part of technical solution realization principle and unspecified in the prior art, in order to avoid excessively repeat.
The foregoing description of the disclosed embodiments can be realized those skilled in the art or using the present invention.To this
A variety of modifications of a little embodiments will be apparent for a person skilled in the art, and the general principles defined herein can
Without departing from the spirit or scope of the present invention, to realize in other embodiments.Therefore, the present invention will not be limited
It is formed on the embodiments shown herein, and is to fit to consistent with the principles and novel features disclosed in this article widest
Range.
Claims (8)
1. a kind of solar battery cleaning method characterized by comprising
Using containing O3Solution prerinse is carried out to silicon wafer, and the silicon wafer after prerinse is washed；
Alkali polishing is carried out to the silicon wafer, and is washed；
Using containing O3Solution to alkali polishing after the silicon wafer clean, and using the mixed liquor containing HCL and HF to the silicon
Piece is cleaned；
The silicon wafer is washed, and the silicon wafer is dried.
2. solar battery cleaning method according to claim 1, which is characterized in that using containing O3Solution to silicon wafer into
Row prerinse, comprising:
Using containing O3HCL solution to the silicon wafer carry out prerinse；
Using containing O3Solution to alkali polishing after the silicon wafer clean, comprising:
Using containing O3HCL solution to alkali polishing after the silicon wafer clean.
3. solar battery cleaning method according to claim 2, which is characterized in that using containing O3HCL solution to described
Silicon wafer is cleaned, comprising:
Using containing O3HCL solution the silicon wafer is cleaned at 15-30 DEG C.
4. solar battery cleaning method according to claim 3, which is characterized in that using containing O3HCL solution to described
Silicon wafer is cleaned, comprising:
Utilize O3Concentration is that the solution that 30-90ppm, HCL concentration are 5%-20% cleans the silicon wafer.
5. solar battery cleaning method according to claim 4, which is characterized in that using containing O3HCL solution to alkali
After the silicon wafer after polishing is cleaned, further includes:
The silicon wafer is washed.
6. solar battery cleaning method according to claim 1, which is characterized in that dry, wrap to the silicon wafer
It includes:
The silicon wafer is dried using nitrogen.
7. solar battery cleaning method according to any one of claims 1 to 6, which is characterized in that the silicon wafer
After being dried, further includes:
Quality testing is carried out to the silicon wafer.
8. solar battery cleaning method according to claim 7, which is characterized in that carry out quality inspection to the silicon wafer
It surveys, comprising:
Quality testing is carried out to the silicon wafer using metallographic microscope.
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Cited By (2)
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| CN112599618A (en) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
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| CN109545660A (en) * | 2018-11-13 | 2019-03-29 | 国家电投集团西安太阳能电力有限公司 | The cleaning method of the used silicon wafer of solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112599618A (en) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN113539813A (en) * | 2021-06-08 | 2021-10-22 | 天津爱旭太阳能科技有限公司 | Monocrystalline silicon piece back polishing method and silicon piece |
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Application publication date: 20190723 |