CN108269733A - A kind of silicon wafer cleaning method - Google Patents
A kind of silicon wafer cleaning method Download PDFInfo
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- CN108269733A CN108269733A CN201711378376.6A CN201711378376A CN108269733A CN 108269733 A CN108269733 A CN 108269733A CN 201711378376 A CN201711378376 A CN 201711378376A CN 108269733 A CN108269733 A CN 108269733A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02057—Cleaning during device manufacture
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Abstract
A kind of silicon wafer cleaning method, the method includes：Primary cleaning is carried out to silicon chip；The silicon chip by primary cleaning is cleaned using HF solution；Silicon chip after the cleaning of HF solution is put into the pure water of certain temperature, places a period of time；And take out silicon chip from pure water, silicon chip is cleaned using DHF solution.The silicon wafer cleaning method that the application provides can be substantially reduced the roughness of silicon chip surface, while can also promote cleaning performance.
Description
Technical field
This application involves but be not limited to technical field of solar batteries, be particularly, but not limited to a kind of Wafer Cleaning side
Method.
Background technology
Heterojunction amorphous silicon/crystal silicon solar batteries HJT (Hetero-junction with Intrinsic Thin
Layer) also known as HIT, it is a kind of efficient crystal silicon battery, there is high open circuit voltage.The higher open circuit electricity of HJT batteries
Pressure mainly has benefited from the passivation for having good intrinsic amorphous silicon in its battery structure.
In the production technology of HJT batteries, making herbs into wool, cleaning and pecvd process are the central factors for influencing passivation effect.For
Reach good passivation effect, just necessarily require the pyramid size uniformity after making herbs into wool；Pyramid surface is smooth after cleaning, gold
Belong to ion to be sufficiently removed；Intrinsic amorphous silicon layer prepared by PECVD is had excellent performance.
Conventional Wafer Cleaning flow is：By techniques such as SC2, CP, SC1 and DHF, it is clear to be finally completed silicon chip successively for silicon chip
It washes, schematic diagram is as shown in Figure 1.The mixed solution of HCl and hydrogen peroxide is used in SC2 techniques；CP(Chemical
Polish HF and HNO) are used in technique3Mixed solution；The mixing that ammonium hydroxide and hydrogen peroxide are used in SC1 techniques is molten
Liquid generally carries out after CP techniques.The mixed solution of HF and HCl are used in DHF techniques.But such technological process
There is also some deleterious effects：After SC1 is cleaned, the roughness of silicon chip surface can improve, and the PECVD in later stage is deposited
Amorphous silicon membrane is unfavorable.In subsequent DHF techniques, although the oxide layer formed during Wafer Cleaning can be removed,
The roughness of silicon chip surface cannot effectively be reduced.
Similarly, the technique that solar cell is prepared using silicon chip as substrate is required for cleaning silicon chip, therefore also all
There are the above problems.
Therefore, cleaning performance (i.e. abundant removal silicon chip can also be promoted simultaneously by finding a kind of silicon chip surface roughness that can reduce
The metal ion on surface) method be very significant.
Invention content
It is the general introduction of the theme to being described in detail herein below.This general introduction is not the protection model in order to limit claim
It encloses.
Present inventor has carried out following analysis and research to prior art：SC2 works in conventional silicon wafers cleaning process
The purpose of skill is to remove the metal impurities of silicon chip surface attachment, and in the solution with high oxidative capacity and low ph value, metal turns
It turns to ion and is dissolved in cleaning solution, therefore use the mixed solution of HCl and hydrogen peroxide, silicon chip table after SC2 techniques
Face forms layer of silicon dioxide layer.HF and HNO are used in CP (Chemical Polish) technique3Mixed solution, mesh
Be gentle pyramidal corner angle, reduce the roughness of silicon chip surface, lay a solid foundation for subsequent amorphous silicon deposition and passivation,
In, HNO3Promote the formation of oxide layer, HF removes the silicon dioxide layer of silicon chip surface, while is attached to the gold in silicon dioxide layer
Belong to and metal hydroxides be dissolved into cleaning solution again, the metals such as aluminium, iron, zinc, the nickel of silicon chip surface can be easily removed,
In generation oxide (HNO3Effect), during removing oxide (HF effects), copper etc. cannot be gone by SC2 solution and HF solution
The noble metal removed is then removed using nitric acid, and pyramidal surface can also become more smooth.The purpose of SC1 techniques is removal silicon chip table
Metal ion, granule foreign and the organic contamination in face use the mixed solution of ammonium hydroxide and hydrogen peroxide, and silicon chip is by dioxygen water oxygen
Change forms silicon dioxide layer, and the metal ion and granule foreign of silicon chip surface are wrapped in silicon dioxide layer, the silica
Layer is corroded by ammonium hydroxide, is aoxidized again immediately after corrosion, and oxidation and corrosion are repeated, therefore be attached to the metal of silicon chip surface
Ion and granule foreign are also fallen into corrosion layer in cleaning solution；The organic contamination of the silicon chip surface then oxidation through hydrogen peroxide
It is broken down into carbon dioxide and water and is removed.The mixed solution of HF and HCl are used in DHF techniques, for removing SC1 works
The silicon dioxide layer and part metals ion formed in skill.Silicon chip after CP process, pyramid surface obtain smoothly, for
It is very helpful to promote passivation effect.Ammonium hydroxide in SC1 solution has silicon chip corrasion, and hydrogen peroxide has oxidation to silicon chip,
In SC1 cleaning processes, etching and oxidation process are carried out at the same time.This etching dominated by chemical reagent and oxidation process are very
Acutely.SC1 techniques can increase the roughness of silicon chip surface, this is because ammonium hydroxide (weak base) has corrasion to silicon.
After CP, the extremely small pyramid of size, pyramidal relatively ogival are removed on silicon chip surface, but this
Kind smooth surface is after SC1 techniques, due to the etching of ammonium hydroxide, silicon chip surface become again some are coarse, be unfavorable for subsequent
Amorphous silicon deposition.If CP and SC1 processing flow sequences are exchanged, but it is unfavorable for the removal of impurity.So find a kind of energy
Keep cleaning performance, while the method that silicon chip surface roughness can also be reduced, for silicon wafer cleaning process be very it is necessary to.
It is made in the technology largely analyzed and researched to prior art, present inventor is creatively in prior art
On the basis of, between SC1 cleaning steps and DHF cleaning steps, add in multistep HF cleanings, strong oxidant solution processing and warm water
So as to obtain a kind of silicon wafer cleaning method, silicon chip surface can be reduced using the silicon wafer cleaning method of the application for oxidation step
Roughness and cleaning performance can also be promoted.
Specifically, this application provides a kind of silicon wafer cleaning method, the method includes：
Primary cleaning is carried out to silicon chip；
The silicon chip by primary cleaning is cleaned using HF solution；
Silicon chip after the cleaning of HF solution is put into the pure water of certain temperature, places a period of time；And
Silicon chip from pure water is taken out, silicon chip is cleaned using DHF solution.
In this application, it is the impurity in order to remove silicon chip surface attachment primary cleaning to be carried out to silicon chip, for example, metal is miscellaneous
Matter, metal ion, granule foreign and organic contamination, and the pyramid corner angle of gentle silicon chip.
In some embodiments, the percent by volume of the HF solution can be 0.1~10%, be cleaned using HF solution
Soaking time can be 1-10min.
In some embodiments, the pure water can be the ultra-pure water of resistivity ＞ 18M Ω cm, and the temperature of pure water can
Think 60-90 DEG C, the time that silicon chip is placed in pure water can be 10-60 minutes.
In some embodiments, after using the cleaning of HF solution, before silicon chip is put into pure water, the method can be with
Including：
Silicon chip is cleaned using strong oxidant solution；And
The silicon chip after strong oxidant solution cleans is cleaned using HF solution.
In some embodiments, clean using strong oxidant solution and cleaned using HF solution two can be repeated
A step.
Optionally, the number for repeating two steps cleaned using strong oxidant solution and cleaned using HF solution can
Think 1-10 times.
In some embodiments, the strong oxidant solution can be HNO3And H2O2Mixed solution, in mixed solution
HNO3：H2O2Volume ratio can be 3:1-8:1, the temperature of mixed solution can be 65-90 DEG C, strong oxidant solution cleaning
Soaking time can be 15-60 minutes.
In some embodiments, use the percent by volume of HF solution that uses later of strong oxidant solution cleaning can be with
It is 0.1~10%, it can be 1-10min to use the soaking time that HF solution cleans.
In some embodiments, the DHF solution can be the mixed solution of HF and HCl, the body of HF in mixed solution
Product percentage can be 0.5-5%, and the percent by volume of HCl can be 3-10%, and the soaking time of DHF solution cleaning can be
5-30 minutes.
In some embodiments, primary the step of cleaning is carried out to silicon chip to be：
Silicon chip is cleaned using SC2 solution；
Silicon chip is cleaned using CP solution；And
Silicon chip is cleaned using SC1 solution.
In some embodiments, the SC2 solution can be the mixed solution of HCl and hydrogen peroxide, in mixed solution
HCl：Hydrogen peroxide：The volume ratio of water can be 1:1:7-1:2:The soaking time of 7, SC2 solution cleaning can be 5-20min.
In some embodiments, the CP solution can be HF and HNO3Mixed solution, HF in mixed solution：HNO3
Volume ratio can be 0.1:100-2:The soaking time of 100, CP solution cleaning can be 1-5min.
In some embodiments, the SC1 solution can be the mixed solution of ammonium hydroxide and hydrogen peroxide, ammonia in mixed solution
Water：Hydrogen peroxide：The volume ratio of water can be 1:1:7-1:2:The soaking time of 7, SC2 solution cleaning can be 5-20min.
In this application, " percent by volume " refers to the volume hundred of the commercially available stoste with certain mass score in the solution
Divide ratio.For example, the volume that the percent by volume of HF solution refers to commercially available HF stostes (mass fraction 49%) for 0.1~10% accounts for HF
The 0.1~10% of liquor capacity；The HF solution that percent by volume is 1% can be prepared by following methods：Take the commercially available HF stostes of 1L
(mass fraction 49%) and 99L water is uniformly mixed.
" volume ratio " refers to the volume ratio of the commercially available stoste with certain mass score.For example, HNO3And H2O2Mixing it is molten
HNO in liquid3：H2O2Volume ratio be 3:1-8:1 refers to commercially available HNO3The volume of stoste (mass fraction 68%) and commercially available H2O2It is former
The ratio between volume of liquid (mass fraction 30%) is 3:1-8:1.
The silicon wafer cleaning method of the application increases HF cleanings or strong oxidant solution on the basis of original cleaning
Processing and warm water oxidation.The purpose of the HF cleaning steps of front is the silicon dioxide layer that will be generated in SC1 cleaning steps
On the one hand removal completely removes organic contamination, metal ion and the granule foreign of being attached to silicon chip surface from silicon chip surface；Separately
On the one hand be conducive to expose fresh silicon face, make it again by Strong oxdiative solution oxide or by warm water oxidation weight
Newly silicon dioxide layer is generated in silicon chip surface.The silicon dioxide layer for aoxidizing the generation of this step by warm water has finer and close knot
Structure has passivation for silicon chip.
Using strong oxidant solution or warm water oxidation technology during silicon chip surface generates silica, corner angle and
The silicon chip for being participated at tip and forming silicon dioxide layer is more, therefore when later use HF removal silicon dioxide layers, corner angle
It is more with the comparison that is also stripped accordingly at tip；On the contrary, the thinner thickness for the silicon dioxide layer that flat place is formed, is subsequently shelled
From it is also fewer；Coordinate follow-up HF solution goes silica oxide layer process, and pyramidal injustice can be reduced by increasing this step
Whole degree reduces roughness.In addition, since the degree that silicon chip is aoxidized in strong oxidizer is more severe, the titanium dioxide that accordingly generates
Silicon layer thickness is larger, and silica process is gone by follow-up HF, and the thickness that silicon chip surface is stripped is big, so corresponding surface has
Machine pollution and metal ion are also removed more abundant.The application is by controlling the experiment parameter of strong oxidant solution and warm water oxygen
Change the technological parameter of step, can effectively control the thickness of the silicon dioxide layer of generation.By growing silica, coordinate
Subsequent HF solution removes silicon dioxide layer step, can substantially reduce the roughness of silicon chip surface, is more favorable to be promoted clear
Wash effect.The silicon chip surface that these roughness reduce is more advantageous to the covering of follow-up amorphous silicon membrane, is conducive to promote passivation effect
Fruit.
Compared with original cleaning, the silicon wafer cleaning method of the application carries the minority carrier life time of silicon chip intrinsic amorphous silicon
It has risen more than 2800 μ s, the improved efficiency of battery 3.9%.
Other features and advantage will illustrate in the following description, also, partly become from specification
It obtains it is clear that being understood by implementing the application.The purpose of the application and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used for providing further understanding technical scheme, and a part for constitution instruction, with this
The embodiment of application for explaining the technical solution of the application, does not form the limitation to technical scheme together.
Fig. 1 is the process flow chart of conventional silicon wafers cleaning.
Fig. 2 is the process flow chart of the Wafer Cleaning of the embodiment of the present application 1.
Fig. 3 is the process flow chart of the Wafer Cleaning of the embodiment of the present application 2.
Fig. 4 is the minority carrier life time table of the silicon chip after the cleaning of the method for embodiment 2 and comparative example 1.
Specific embodiment
Purpose, technical scheme and advantage to make the application are more clearly understood, below in conjunction with attached drawing to the application
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature mutually can arbitrarily combine.
Solution used in following embodiment is prepared using the common commercially available stoste with certain mass score,
In：
HCl stostes are the HCl that commercially available mass fraction is 36%；
H2O2Stoste is the H that commercially available mass fraction is 30%2O2；
HF stostes are the HF that commercially available mass fraction is 49%；
HNO3Stoste is the HNO that commercially available mass fraction is 68%3；
Ammonium hydroxide stoste is the ammonium hydroxide that commercially available mass fraction is 28%.
The cleaning of SC2 solution, the cleaning of CP solution, the cleaning of SC1 solution and the cleaning of DHF solution are that silicon chip commonly used in the art is clear
Step is washed, wherein,
SC2 solution can be the mixed solution of HCl and hydrogen peroxide, HCl in mixed solution：Hydrogen peroxide：The volume ratio of water can
Think 1:1:7-1:2:The soaking time of 7, SC2 solution cleaning can be 5-20min；
CP solution can be HF and HNO3Mixed solution, HF in mixed solution：HNO3Volume ratio can be 0.1:100-
2:The soaking time of 100, CP solution cleaning can be 1-5min；
SC1 solution can be the mixed solution of ammonium hydroxide and hydrogen peroxide, ammonium hydroxide in mixed solution：Hydrogen peroxide：The volume ratio of water
Can be 1:1:7-1:2:The soaking time of 7, SC2 solution cleaning can be 5-20min；
DHF solution can be the mixed solution of HF and HCl, and the percent by volume of HF can be 0.5-5% in mixed solution,
The percent by volume of HCl can be 3-10%, and the soaking time of DHF solution cleaning can be 5-30 minutes.
Embodiment 1
A kind of silicon wafer cleaning method, including：
(1) silicon chip is cleaned using the mixed solution of HCl and hydrogen peroxide (SC2), to remove the particle of silicon chip surface
And metal impurities；
(2) using HF and HNO3Mixed solution (CP) silicon chip is cleaned, with the pyramidal corner angle of gentle silicon chip；
(3) silicon chip is cleaned using the mixed solution of ammonium hydroxide and hydrogen peroxide (SC1 solution), to remove silicon chip surface
Metal ion；
(4) silicon chip obtained using HF solution to step (3) is impregnated, and removes the silicon dioxide layer of silicon chip surface, HF
The percent by volume (Vol%) of solution is 10%, and soaking time is 1 minute；
(5) silicon chip that step (4) obtains is put into pure water, be soaked for a period of time, silicon chip surface is made to form one layer of densification
Silicon dioxide layer, pure water be resistivity ＞ 18M Ω cm ultra-pure water, temperature be 60 DEG C, soaking time be 60 minutes；
(6) silicon chip from pure water is taken out, silicon chip is cleaned using the mixed solution (DHF) of HF and HCl.
Embodiment 2
A kind of silicon wafer cleaning method, including：
(1) silicon chip is cleaned using the mixed solution of HCl and hydrogen peroxide (SC2), to remove the particle of silicon chip surface
And metal impurities；
(2) using HF and HNO3Mixed solution (CP) silicon chip is cleaned, with the pyramidal corner angle of gentle silicon chip；
(3) silicon chip is cleaned using the mixed solution of ammonium hydroxide and hydrogen peroxide (SC1 solution), to remove silicon chip surface
Metal ion；
(4) silicon chip obtained using HF solution to step (3) is impregnated, and removes the silicon dioxide layer of silicon chip surface, HF
The percent by volume (Vol%) of solution is 5%, and soaking time is 2 minutes；
(5) silicon chip that step (4) obtains is put into HNO3+H2O2Mixed solution in, HNO3：H2O2Volume ratio be 7:1,
Solution temperature is 80 DEG C, and soaking time is 50 minutes, and thicker silicon dioxide layer is generated in silicon chip surface；
(6) silicon chip that step (5) obtains is put into HF solution, is impregnated, remove the silicon dioxide layer of silicon chip surface,
The percent by volume (Vol%) of HF solution is 10%, and soaking time is 8 minutes；
(7) silicon chip that step (6) obtains is put into pure water, be soaked for a period of time, silicon chip surface is made to form one layer of densification
Silicon dioxide layer, pure water be resistivity ＞ 18M Ω cm ultra-pure water, temperature be 85 DEG C, soaking time be 40 minutes；
(8) silicon chip from pure water is taken out, silicon chip is impregnated using DHF solution and silicon chip is carried out to impregnate again and clear
It washes.
(9) cleaning finishes, and takes out silicon chip, after being dried up using pure nitrogen gas, carries out follow-up test and battery preparation technique.
Embodiment 3
A kind of silicon wafer cleaning method, including：
(1) silicon chip is cleaned using the mixed solution of HCl and hydrogen peroxide (SC2), to remove the particle of silicon chip surface
And metal impurities；
(2) using HF and HNO3Mixed solution (CP) silicon chip is cleaned, with the pyramidal corner angle of gentle silicon chip；
(3) silicon chip is cleaned using the mixed solution of ammonium hydroxide and hydrogen peroxide (SC1 solution), to remove silicon chip surface
Metal ion；
(4) silicon chip obtained using HF solution to step (3) is impregnated, and removes the silicon dioxide layer of silicon chip surface, HF
The percent by volume (Vol%) of solution is 2%, and soaking time is 7 minutes；
(5) silicon chip that step (4) obtains is put into HNO3+H2O2Mixed solution in, HNO3：H2O2Volume ratio be 4:1,
Solution temperature is 70 DEG C, and soaking time is 30 minutes, and thicker silicon dioxide layer is generated in silicon chip surface；
(6) silicon chip that step (5) obtains is put into HF solution, is impregnated, remove the silicon dioxide layer of silicon chip surface；
The percent by volume (Vol%) of HF solution is 3%, and soaking time is 5 minutes；
(7) silicon chip that step (6) obtains is put into pure water, be soaked for a period of time, silicon chip surface is made to form one layer of densification
Silicon dioxide layer, pure water be resistivity ＞ 18M Ω cm ultra-pure water, temperature be 75 DEG C, soaking time be 30 minutes；
(8) silicon chip from pure water is taken out, silicon chip is impregnated using DHF solution and silicon chip is carried out to impregnate again and clear
It washes.
(9) silicon chip is taken out, after being dried up using pure nitrogen gas, carries out follow-up test and battery preparation technique.
Comparative example 1
This comparative example (the conventional technique of mainstream at present) the difference is that only with embodiment 2：Do not include step
(4), (5), (6) and (7).
Performance test
Cleaning performance is showed by the numerical value of minority carrier life time after cleaning.Influence of the roughness to battery performance, passes through electricity
The I-V parameters in pond show.
1st, test is by embodiment 2 and the minority carrier life time of the silicon chip after the method cleaning of comparative example 1.Test result see
Fig. 4.
It can be seen from the figure that it is apparently higher than using the minority carrier life time of the silicon chip after the method cleaning of the embodiment of the present application 2
Using the silicon chip after the method cleaning of comparative example 1.Notebook data shows that the cleaning performance of the method for the embodiment of the present application 2 is better than pair
Ratio 1 (conventional method).
2nd, battery is prepared using by embodiment 2 and the silicon chip after the method cleaning of comparative example 1.Two groups of batteries, in addition to
Other than cleaning method difference, other all battery preparation techniques are the same.Test the I-V parameters of battery.Test result please
It is shown in Table 1 (parameter normalized).
Table 1
As it can be seen from table 1 the open circuit of the battery electricity prepared using the silicon chip of the method cleaning Jing Guo the embodiment of the present application 2
Pressure and fill factor illustrate higher than battery prepared by the silicon chip of the method cleaning Jing Guo comparative example 1 by the embodiment of the present application 2
The silicon chip of method cleaning has smaller roughness.
Although the embodiment disclosed by the application is as above, the content only for ease of understanding the application and use
Embodiment is not limited to the application.Technical staff in any the application fields, is taken off not departing from the application
Under the premise of the spirit and scope of dew, any modification and variation, but the application can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (12)
1. a kind of silicon wafer cleaning method, the method includes：
Primary cleaning is carried out to silicon chip；
The silicon chip by primary cleaning is cleaned using HF solution；
Silicon chip after the cleaning of HF solution is put into the pure water of certain temperature, places a period of time；And
Silicon chip from pure water is taken out, silicon chip is cleaned using DHF solution.
2. silicon wafer cleaning method according to claim 1, wherein, the percent by volume of the HF solution is 0.1~10%,
The soaking time that HF solution cleans is used as 1-10min.
3. silicon wafer cleaning method according to claim 1, wherein, the pure water is the ultrapure of resistivity ＞ 18M Ω cm
Water, the temperature of pure water is 60-90 DEG C, and the time that silicon chip is placed in pure water is 10-60 minutes.
4. silicon wafer cleaning method according to claim 1, after using the cleaning of HF solution, before silicon chip is put into pure water,
The method further includes：
Silicon chip is cleaned using strong oxidant solution；And
The silicon chip after strong oxidant solution cleans is cleaned using HF solution.
5. silicon wafer cleaning method according to claim 4, wherein, repeat to clean and use using strong oxidant solution
Two steps of HF solution cleaning, optionally, number of repetition are 1-10 times.
6. silicon wafer cleaning method according to claim 4 or 5, wherein, the strong oxidant solution is HNO3And H2O2It is mixed
Solution is closed, HNO in mixed solution3：H2O2Volume ratio be 3:1-8:1, the temperature of mixed solution is 65-90 DEG C, and strong oxidizer is molten
The soaking time of liquid cleaning is 15-60 minutes.
7. silicon wafer cleaning method according to claim 4 or 5, wherein, it is used later using strong oxidant solution cleaning
The percent by volume of HF solution is 0.1~10%, uses the soaking time that HF solution cleans as 1-10min.
8. silicon wafer cleaning method according to claim 1, wherein, the DHF solution is the mixed solution of HF and HCl, is mixed
The percent by volume of HF in solution is closed as 0.5-5%, the percent by volume of HCl is 3-10%, the soaking time of DHF solution cleaning
It is 5-30 minutes.
9. silicon wafer cleaning method according to claim 1, wherein, carrying out the step of primary is cleaned to silicon chip is：
Silicon chip is cleaned using SC2 solution；
Silicon chip is cleaned using CP solution；And
Silicon chip is cleaned using SC1 solution.
10. silicon wafer cleaning method according to claim 9, wherein, the SC2 solution is molten for the mixing of HCl and hydrogen peroxide
Liquid, HCl in mixed solution：Hydrogen peroxide：The volume ratio of water is 1:1:7-1:2:The soaking time of 7, SC2 solution cleaning is 5-
20min。
11. silicon wafer cleaning method according to claim 9, wherein, the CP solution is HF and HNO3Mixed solution, mix
Close HF in solution：HNO3Volume ratio be 0.1:100-2:The soaking time of 100, CP solution cleaning is 1-5min.
12. silicon wafer cleaning method according to claim 9, wherein, the SC1 solution is molten for the mixing of ammonium hydroxide and hydrogen peroxide
Liquid, ammonium hydroxide in mixed solution：Hydrogen peroxide：The volume ratio of water is 1:1:7-1:2:The soaking time of 7, SC2 solution cleaning is 5-
20min。
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| CN110942975A (en) * | 2018-09-25 | 2020-03-31 | 君泰创新（北京）科技有限公司 | Silicon wafer cleaning method |
| CN111326401A (en) * | 2018-12-17 | 2020-06-23 | 上海先进半导体制造股份有限公司 | Method for cleaning metal layer of power semiconductor device |
| CN114226327A (en) * | 2021-12-17 | 2022-03-25 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing composite sediment deposited on surface of ceramic substrate |
| CN111326401B (en) * | 2018-12-17 | 2024-07-09 | 上海先进半导体制造有限公司 | Method for cleaning metal layer of power semiconductor device |
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| CN111326401B (en) * | 2018-12-17 | 2024-07-09 | 上海先进半导体制造有限公司 | Method for cleaning metal layer of power semiconductor device |
| CN114226327A (en) * | 2021-12-17 | 2022-03-25 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing composite sediment deposited on surface of ceramic substrate |
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