CN112768555A - Method for manufacturing solar cell suede - Google Patents
Method for manufacturing solar cell suede Download PDFInfo
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- CN112768555A CN112768555A CN202011627331.XA CN202011627331A CN112768555A CN 112768555 A CN112768555 A CN 112768555A CN 202011627331 A CN202011627331 A CN 202011627331A CN 112768555 A CN112768555 A CN 112768555A
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- solar cell
- solution
- cleaning
- suede
- immersing
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 123
- 238000001035 drying Methods 0.000 claims abstract description 23
- 239000011259 mixed solution Substances 0.000 claims abstract description 21
- 230000018044 dehydration Effects 0.000 claims abstract description 14
- 238000006297 dehydration reaction Methods 0.000 claims abstract description 14
- 239000000243 solution Substances 0.000 claims description 144
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 117
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 56
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 22
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 21
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 230000035484 reaction time Effects 0.000 claims description 20
- 238000002310 reflectometry Methods 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 238000005406 washing Methods 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 6
- 230000005587 bubbling Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 222
- 239000012535 impurity Substances 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000003929 acidic solution Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- -1 fingerprints Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/044—Cleaning involving contact with liquid using agitated containers in which the liquid and articles or material are placed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for manufacturing a solar cell suede; the method is characterized in that: a pre-cleaning step; placing the solar cell in the mixed solution for surface cleaning; a step of removing damage; a first cleaning step is also included between the damage removing step and the rapid large suede step; a step of quickly making a large suede; treating the sharp top of the large velvet surface; a second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface; growing a small suede surface; the step of growing the small suede surface comprises a third cleaning step; the third cleaning step is followed by a pre-dehydration step; the pre-dehydration step is followed by a heat drying step. The problems that the light absorption efficiency of the suede is low, the solar cell cannot be cleaned and the like due to the existing scheme are solved.
Description
Technical Field
The invention relates to a solar cell, in particular to a method for manufacturing a solar cell suede.
Background
Generally, the mainstream product in the photovoltaic industry at present is a P-type single crystal PERC (Passivated emitter and reactor Cell, also called Passivated emitter and back Cell) solar Cell, and after the PERC Cell is rapidly developed in recent years, the global PERC Cell capacity reaches one hundred GW, and the continuous increase trend of the photoelectric conversion efficiency of the PERC Cell is in bottleneck. The efficiency of the power-assisted PERC battery in the new technology needs to be continuously improved, and the high cost performance advantage of the PERC battery is kept. Several places that affect the conversion efficiency of solar cells. 1. Optical loss; the solar rays have high reflectivity on the surface of the cell, the travel is short, and the light absorption is influenced. 2. Electrical losses; including contact resistance, bulk resistance, and material resistance. 3. Recombination loss; and impurities, surface impurities, metal residues and the like in the silicon chip form trap composite electron-hole pairs. In order to improve the rotating efficiency, the invention also starts from the three directions, thereby effectively reducing the optical loss and improving the light absorption efficiency.
In the existing scheme, the surface is directly subjected to texturing after being cleaned, the surface of a silicon wafer is corroded once by using a mixed solution of low-concentration KOH and a texturing additive, and then the surface is cleaned and prepared. Such a solution has the following problems: (1) the light absorption efficiency of the suede is low, and the solar cell cannot be cleaned.
Disclosure of Invention
Aiming at the defects of the prior art, the invention discloses a method for manufacturing a solar cell suede, which aims to solve the problems that the light absorption efficiency of the suede is low, the solar cell cannot be cleaned and the like in the prior art.
The technical scheme adopted by the invention is as follows:
a method for manufacturing a solar cell suede; the method comprises the following steps:
a pre-cleaning step; placing the solar cell in the mixed solution for surface cleaning;
a step of removing damage; immersing the solar cell into the solution with the concentration: 7-15 wt% sodium hydroxide solution; polishing time: 120-180 s; polishing temperature: 70-75 ℃;
a step of quickly making a large suede; immersing the solar cell into the solution with the concentration: 2-3 wt%, temperature: sodium hydroxide solution at 80-100 deg.c; corroding the surface of the solar cell to form a pyramid-shaped surface form; reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 13 to 15 percent;
treating the sharp top of the large velvet surface; immersing the solar cell into the solution with the concentration: 10-15 wt%, temperature: sodium hydroxide solution at 80-100 deg.c; the pyramid tip of the pyramid-shaped surface form on the surface of the solar cell is corroded to be flat, and a pyramid base is formed on the surface of the solar cell; reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 16 to 19 percent;
growing a small suede surface; immersing the solar cell into the solution with the concentration: 0.5-1.5 wt%, temperature: sodium hydroxide solution at 75-85 deg.c; the surface of the solar cell is corroded to form a surface shape of a small suede; reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 8 to 9 percent.
The further technical scheme is as follows: placing the solar cell piece at a temperature: mixing the solution at 60-70 deg.C; the mixed solution is a mixed solution of 1% of sodium hydroxide and 3% of hydrogen peroxide; reaction time of the solar cell: 90-150 s.
The further technical scheme is as follows: a first cleaning step is also included between the damage removing step and the rapid large suede step; cleaning the surface of the solar cell by adopting a first cleaning solution; the first cleaning solution comprises 25-35ppm of ozone gas and 0.2-0.35 wt% of hydrogen chloride solution; cleaning time of the solar cell: 100-.
The further technical scheme is as follows: a second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface; immersing the solar cell into a second cleaning solution; introducing nitrogen into the second cleaning solution, and bubbling to clean the surface of the solar cell; cleaning time of the solar cell: 100-150 s; the second cleaning solution is deionized water.
The further technical scheme is as follows: the step of growing the small suede surface comprises a third cleaning step; the third washing step specifically comprises:
an ozone cleaning step; immersing a solar cell into an ozone solution; cleaning time of the solar cell: 90-120 s; the ozone solution comprises 25-35ppm of ozone gas and 0.2-0.35 wt% of hydrogen chloride solution;
cleaning with acid liquor; immersing a solar cell into an acid solution; cleaning time of the solar cell: 90-120 s; the acid solution comprises a hydrogen fluoride solution and a hydrogen chloride solution;
a water cleaning step; immersing a solar cell into an aqueous solution; cleaning time of the solar cell: 90-120 s; the aqueous solution is a deionized water solution.
The further technical scheme is as follows: the third cleaning step is followed by a pre-dehydration step; immersing the solar cell into pure water, and slowly lifting the solar cell; temperature of pure water: 50-80 ℃; pulling rate: spraying hot air by a hot air knife at 0.5cm/s to scrape the solution on the surface of the solar cell; temperature of hot air: 70-100 ℃; the hot air injection time is 120-180 s.
The further technical scheme is as follows: the pre-dehydration step is followed by a heating and drying step; the solar cell is placed in a first drying groove, nitrogen is sprayed in the first drying groove, and the nitrogen flows along the surface of the solar cell; nitrogen gas injection time: 600 and 800 s; temperature of nitrogen gas injection: 75-85 ℃.
The invention has the following beneficial effects: the invention designs a manufacturing method of a solar cell texture surface, which adopts a quick large texture surface step to form a pyramid-shaped surface form on the surface of a solar cell, adopts a large texture surface sharp top treatment step to form a tower base on the surface of the solar cell, and adopts a small texture surface growing step to corrode the surface of the solar cell to form a small texture surface form. The manufacturing method of the solar cell suede brings the following effects: (1) elastic distortion regions, transition regions, fracture regions and polycrystalline regions can be removed by a de-damaging step; (2) organic metal on the surface of the solar cell can be removed through the first cleaning step, the surface of the solar cell is subjected to acid washing through a hydrogen chloride solution, metal impurities on the surface of a silicon wafer are removed through the hydrogen chloride solution, and the impurities generated in the damage removing step can be completely removed through the first cleaning step, so that the texturing process of the solar cell is facilitated; (3) by controlling the concentration and the temperature of the sodium hydroxide solution, a better pyramid-shaped surface form can be formed on the surface of the solar cell by corrosion, a large suede can be quickly corroded in a short time, and preparation is made for a sharp top treatment step of the large suede; (4) in the step of quick large texture surface, a low-concentration sodium hydroxide solution is adopted, so that the solar cell has anisotropic corrosion characteristics with different corrosion rates in different crystal orientations, and pyramid-shaped densely-distributed surface appearance is formed on the surface of the solar cell by corrosion; (5) in the step of treating the sharp top of the large suede surface, the pyramid tips with pyramid-shaped surface morphology on the surface of the solar cell are corroded into a plane to form a pyramid base through a sodium hydroxide solution with higher concentration, so that the subsequent step of growing the small suede surface is convenient to continuously corrode on the plane; (6) nitrogen is introduced into the second cleaning solution, so that the flowing speed of the second cleaning solution is accelerated, the cleaning effect of the second cleaning solution is improved, and cleaner corrosion conditions are provided for the subsequent step of growing the small suede; (7) the step of growing the small suede is carried out on the basis of the step of processing the sharp top of the large suede, the small suede is corroded on the cone tip plane of the pyramid-shaped surface form on the surface of the solar cell, and the cone base and the small suede form a composite suede surface form; (8) metal impurities on the surface of the solar cell piece can be removed through a hydrogen chloride solution, and finally the surface of the solar cell piece is cleaned through a water cleaning step; (9) after the solar cell is immersed in pure water, slowly lifting the solar cell upwards to move, arranging hot air knives on two sides of the solar cell, spraying hot air from hot air ports of the hot air knives to scrape moisture on the surface of the solar cell, and scraping most of moisture on the surface of the solar cell through a pre-dehydration step; (10) when spraying nitrogen gas in the first drying groove, nitrogen gas flows along the surface of the solar cell piece, the heat of nitrogen gas is transferred to the solar cell piece to complete the drying of the solar cell piece, and meanwhile, nitrogen gas flows along the surface of the solar cell piece, so that the moisture on the surface of the solar cell piece can be scraped, and the drying efficiency of the solar cell piece is improved.
Drawings
FIG. 1 is a flow chart of the present invention.
Detailed Description
The following describes a specific embodiment of the present embodiment with reference to the drawings.
FIG. 1 is a flow chart of the present invention. Referring to fig. 1, the invention discloses a method for manufacturing a solar cell texture. The manufacturing method of the solar cell suede comprises the following steps:
and (5) a pre-cleaning step. And (3) placing the solar cell in the mixed solution for surface cleaning.
Placing the solar cell piece at a temperature: mixed solution at 60-70 deg.c. The mixed solution was a mixed solution of 1% sodium hydroxide and 3% hydrogen peroxide. Reaction time of the solar cell: 90-150 s.
Before the texturing process, the raw materials need to be cut by diamond wires to form a plurality of solar cells. The texturing process of the solar cell has higher requirements on the surface cleanliness of the solar cell. The mixed solution can be used for cleaning oil stains, cutting fluid, fingerprints, metal particles and residual impurities remained on the surface of the solar cell, and a good surface state of the solar cell is created for the texturing process of the solar cell.
And (5) a damage removing step. Immersing the solar cell into the solution with the concentration: 7-15 wt% sodium hydroxide solution. Polishing time: 120-. Polishing temperature: 70-75 ℃.
After the solar cell is cut, an elastic distortion area, a transition area, a fracture area and a polycrystalline area are sequentially formed on the surface of the substrate from inside to outside. The elastic distortion zone, transition zone, fracture zone and polycrystalline region may be removed by a de-damage step.
The smooth, flat and undamaged surface of the solar cell can be obtained by carrying out chemical polishing in the damage removing step. The sodium hydroxide solution has strong basicity and strong corrosivity.
The concentration of the sodium hydroxide solution and the polishing temperature are increased in the damage removing step.
And the sodium hydroxide solution is adopted for removing damage, so that the damage removing process is easy to control, the waste liquid is easy to treat, and the environment protection is facilitated. The polishing thickness of the damage removing step is 20-30 microns.
A first cleaning step is also included between the damage removing step and the rapid large suede step. And cleaning the surface of the solar cell by adopting a first cleaning solution. The first cleaning solution comprises 25-35ppm ozone gas and 0.2-0.35 wt% hydrogen chloride solution. Cleaning time of the solar cell: 100-.
Ozone gas is an unstable gas, having strong corrosiveness and oxidation. After the surface of the solar cell is contacted with ozone gas, an oxide film is formed on the surface of the solar cell. Organic metal on the surface of the solar cell can be removed through the first cleaning step. And (3) completing acid washing on the surface of the solar cell piece by using a hydrogen chloride solution.
And removing metal impurities on the surface of the silicon wafer by using a hydrogen chloride solution. The chlorine hydride solution has the double functions of acid and complexing agent, and the chlorine ions can dissolve impurities possibly contaminated on the surface of the wafer, active metals such as aluminum, magnesium and the like and other oxides. However, it is impossible to dissolve an inert metal such as copper, silver, or gold, or a poorly soluble substance such as silicon dioxide.
Impurities generated in the damage removing step can be completely removed through the first cleaning step, and the texturing process of the solar cell is facilitated.
And (5) quickly making a large suede. Immersing the solar cell into the solution with the concentration: 2-3 wt%, temperature: sodium hydroxide solution at 80-100 deg.c. The surface of the solar cell is corroded to form a pyramid-shaped surface form. Reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 13 to 15 percent.
The suede is prepared by utilizing a light trapping principle, so that the reflectivity of light is reduced, the short-circuit current is improved, the area of a PN junction is increased, and the photoelectric conversion efficiency of the solar cell is finally improved.
The concentration of the sodium hydroxide solution is less than 1.5% or more than 4%, which can damage the pyramid-shaped surface morphology of the solar cell surface. When the concentration of the sodium hydroxide solution is 2-3 wt%, the pyramid-shaped surface morphology of the surface of the solar cell piece is the best.
Under the condition that the concentration of the sodium hydroxide solution is the same, the higher the temperature of the sodium hydroxide solution is, the faster the surface reaction speed of the solar cell is. By controlling the concentration and the temperature of the sodium hydroxide solution, a better pyramid-shaped surface form can be formed on the surface of the solar cell by corrosion. The large suede can be quickly corroded in a short time, and preparation is made for the sharp-top treatment step of the large suede.
And a low-concentration sodium hydroxide solution is adopted in the step of quickly and greatly texturing. The solar cell has anisotropic corrosion characteristics with different corrosion rates in different crystal orientations, and a pyramid-shaped densely-distributed surface appearance is formed on the surface of the solar cell through corrosion.
And (5) treating the sharp tops of the large velvet surfaces. Immersing the solar cell into the solution with the concentration: 10-15 wt%, temperature: sodium hydroxide solution at 80-100 deg.c. The pyramid tip of the pyramid-shaped surface form on the surface of the solar cell is corroded to be flat, and a pyramid base is formed on the surface of the solar cell. Reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 16 to 19 percent.
In the step of treating the sharp top of the large suede surface, the pyramid tips with pyramid-shaped surface morphology on the surface of the solar cell are corroded into a plane by a sodium hydroxide solution with higher concentration to form a pyramid base. The subsequent step of growing the small suede is convenient to continue corroding on the plane.
A second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface. And immersing the solar cell piece into the second cleaning solution. And introducing nitrogen into the second cleaning solution, and bubbling to clean the surface of the solar cell. Cleaning time of the solar cell: 100-. The second cleaning solution is deionized water.
And nitrogen is introduced into the second cleaning solution, so that the flowing speed of the second cleaning solution is accelerated, and the cleaning effect of the second cleaning solution is improved. Provides a cleaner corrosion condition for the subsequent step of growing the small suede.
And growing a small suede surface. Immersing the solar cell into the solution with the concentration: 0.5-1.5 wt%, temperature: sodium hydroxide solution at 75-85 deg.c. The surface of the solar cell sheet is corroded to form a surface shape of a small suede. Reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 8 to 9 percent.
In the step of growing the small suede, the surface of the solar cell is slowly reacted by immersing the solar cell into a sodium hydroxide solution with low concentration and temperature. The step of growing the small suede is carried out on the basis of the step of processing the sharp top of the large suede, and the small suede is corroded on the pyramid tip plane with the pyramid-shaped surface form on the surface of the solar cell. Compared with the traditional pyramid-shaped surface form, the surface form of the composite suede reduces the reflectivity, increases the light trapping effect and improves the light absorption rate and the conversion rate.
The step of growing the small suede surface comprises a third cleaning step. The third washing step specifically comprises:
and (5) an ozone cleaning step. And immersing the solar cell into an ozone solution. Cleaning time of the solar cell: 90-120 s. The ozone solution comprises 25-35ppm ozone gas and 0.2-0.35 wt% hydrogen chloride solution.
And (5) acid liquor cleaning. And immersing the solar cell into an acid solution. Cleaning time of the solar cell: 90-120 s. The acidic solution includes a hydrogen fluoride solution and a hydrogen chloride solution.
And (5) water washing. And immersing the solar cell into the aqueous solution. Cleaning time of the solar cell: 90-120 s. The aqueous solution is a deionized water solution.
After the solar cell sequentially passes through the steps of rapid large suede surface treatment, large suede surface sharp top treatment and small suede surface growth, impurities are remained on the surface of the solar cell. Through the corrosiveness and the oxidizability of ozone, the solar cell can effectively remove impurities in the ozone cleaning step. After the ozone cleaning step, an ozone solution can form an oxide layer on the surface of the solar cell. In the acid liquor cleaning step, an oxidation layer on the surface of the solar cell can be removed through a hydrogen fluoride solution, and metal impurities on the surface of the solar cell can be removed through a hydrogen chloride solution. And finally, cleaning the surface of the solar cell piece through a water cleaning step.
Through the ozone cleaning step, the acid liquor cleaning step and the water cleaning step in the third cleaning step, the surface of the solar cell can be cleaned, and the cleanliness of the solar cell is guaranteed.
The third washing step is followed by a pre-dehydration step. And immersing the solar cell piece into pure water, and slowly pulling the solar cell piece. Temperature of pure water: 50-80 ℃. Pulling rate: and spraying hot air by a hot air knife at 0.5cm/s to scrape the solution on the surface of the solar cell. Temperature of hot air: 70-100 ℃. Hot air injection time: 120-.
After the solar cell is immersed in pure water, the solar cell is slowly lifted upwards to move, and hot air knives are arranged on two sides of the solar cell. And hot air is sprayed from a hot air port of the hot air knife to scrape off the moisture on the surface of the solar cell. Most of the moisture on the surface of the solar cell sheet can be scraped off by the pre-dehydration step.
The pre-dehydration step is followed by a heat drying step. The solar cell is arranged in the first drying groove, nitrogen is sprayed in the first drying groove, and the nitrogen flows along the surface of the solar cell. Nitrogen gas injection time: 600 and 800 s. Temperature of nitrogen gas injection: 75-85 ℃.
The injection opening in the first drying groove is arranged on the side surface of the solar cell. When nitrogen is sprayed in the first drying groove, the nitrogen flows along the surface of the solar cell piece, and the heat of the nitrogen is transferred to the solar cell piece to complete the drying of the solar cell piece. Meanwhile, nitrogen flows along the surface of the solar cell, so that the moisture on the surface of the solar cell can be scraped, and the drying efficiency of the solar cell is improved.
The technique of the present invention is illustrated below with two examples.
The first embodiment:
the manufacturing method of the solar cell suede comprises the following steps:
and (5) a pre-cleaning step. And (3) placing the solar cell in the mixed solution for surface cleaning.
Placing the solar cell piece at a temperature: mixed solution at 60 ℃. The mixed solution was a mixed solution of 1% sodium hydroxide and 3% hydrogen peroxide. Reaction time of the solar cell: for 90 s.
And (5) a damage removing step. Immersing the solar cell into the solution with the concentration: 7 wt% sodium hydroxide solution. Polishing time: 120 s. Polishing temperature: at 70 ℃.
A first cleaning step is also included between the damage removing step and the rapid large suede step. And cleaning the surface of the solar cell by adopting a first cleaning solution. The first cleaning solution comprised 25ppm of ozone gas and 0.2 wt% hydrogen chloride solution. Cleaning time of the solar cell: for 100 s.
And (5) quickly making a large suede. Immersing the solar cell into the solution with the concentration: 2 wt%, temperature: sodium hydroxide solution at 80 ℃. The surface of the solar cell is corroded to form a pyramid-shaped surface form. Reaction time of the solar cell: 300s, solar cell reflectivity: 13 percent.
And (5) treating the sharp tops of the large velvet surfaces. Immersing the solar cell into the solution with the concentration: 10 wt%, temperature: sodium hydroxide solution at 80 ℃. The pyramid tip of the pyramid-shaped surface form on the surface of the solar cell is corroded to be flat, and a pyramid base is formed on the surface of the solar cell. Reaction time of the solar cell: 300s, solar cell reflectivity: 16 percent.
A second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface. And immersing the solar cell piece into the second cleaning solution. And introducing nitrogen into the second cleaning solution, and bubbling to clean the surface of the solar cell. Cleaning time of the solar cell: for 100 s. The second cleaning solution is deionized water.
And growing a small suede surface. Immersing the solar cell into the solution with the concentration: 0.5 wt%, temperature: sodium hydroxide solution at 75 ℃. The surface of the solar cell sheet is corroded to form a surface shape of a small suede. Reaction time of the solar cell: 300s, solar cell reflectivity: 8 percent.
The step of growing the small suede surface comprises a third cleaning step. The third washing step specifically comprises:
and (5) an ozone cleaning step. And immersing the solar cell into an ozone solution. Cleaning time of the solar cell: for 90 s. The ozone solution comprised 25ppm of ozone gas and 0.2 wt% hydrogen chloride solution.
And (5) acid liquor cleaning. And immersing the solar cell into an acid solution. Cleaning time of the solar cell: for 90 s. The acidic solution includes a hydrogen fluoride solution and a hydrogen chloride solution.
And (5) water washing. And immersing the solar cell into the aqueous solution. Cleaning time of the solar cell: for 90 s. The aqueous solution is a deionized water solution.
The third washing step is followed by a pre-dehydration step. And immersing the solar cell piece into pure water, and slowly pulling the solar cell piece. Temperature of pure water: at 50 ℃. Pulling rate: and spraying hot air by a hot air knife at 0.5cm/s to scrape the solution on the surface of the solar cell. Temperature of hot air: at 70 ℃. Hot air injection time: 120 s.
The pre-dehydration step is followed by a heat drying step. The solar cell is arranged in the first drying groove, nitrogen is sprayed in the first drying groove, and the nitrogen flows along the surface of the solar cell. Nitrogen gas injection time: 600 s. Temperature of nitrogen gas injection: at 75 ℃.
Second embodiment:
the manufacturing method of the solar cell suede comprises the following steps:
and (5) a pre-cleaning step. And (3) placing the solar cell in the mixed solution for surface cleaning.
Placing the solar cell piece at a temperature: mixed solution at 70 ℃. The mixed solution was a mixed solution of 1% sodium hydroxide and 3% hydrogen peroxide. Reaction time of the solar cell: 150 s.
And (5) a damage removing step. And a second polishing step, namely immersing the solar cell into a solution with the concentration: 15 wt% sodium hydroxide solution. Polishing time: 180 s. Polishing temperature: at 75 ℃.
A first cleaning step is also included between the damage removing step and the rapid large suede step. And cleaning the surface of the solar cell by adopting a first cleaning solution. The first cleaning solution comprised 35ppm of ozone gas and 0.35 wt% hydrogen chloride solution. Cleaning time of the solar cell: 150 s.
And (5) quickly making a large suede. Immersing the solar cell into the solution with the concentration: 3 wt%, temperature: sodium hydroxide solution at 100 ℃. The surface of the solar cell is corroded to form a pyramid-shaped surface form. Reaction time of the solar cell: 450s, solar cell reflectivity: 15 percent.
And (5) treating the sharp tops of the large velvet surfaces. Immersing the solar cell into the solution with the concentration: 15 wt%, temperature: sodium hydroxide solution at 100 ℃. The pyramid tip of the pyramid-shaped surface form on the surface of the solar cell is corroded to be flat, and a pyramid base is formed on the surface of the solar cell. Reaction time of the solar cell: 450s, solar cell reflectivity: 19 percent.
A second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface. And immersing the solar cell piece into the second cleaning solution. And introducing nitrogen into the second cleaning solution, and bubbling to clean the surface of the solar cell. Cleaning time of the solar cell: 150 s. The second cleaning solution is deionized water.
And growing a small suede surface. Immersing the solar cell into the solution with the concentration: 1.5 wt%, temperature: sodium hydroxide solution at 85 ℃. The surface of the solar cell sheet is corroded to form a surface shape of a small suede. Reaction time of the solar cell: 450s, solar cell reflectivity: 9 percent.
The step of growing the small suede surface comprises a third cleaning step. The third washing step specifically comprises:
and (5) an ozone cleaning step. And immersing the solar cell into an ozone solution. Cleaning time of the solar cell: 120 s. The ozone solution comprised 35ppm of ozone gas and 0.35 wt% of hydrogen chloride solution.
And (5) acid liquor cleaning. And immersing the solar cell into an acid solution. Cleaning time of the solar cell: 120 s. The acidic solution includes a hydrogen fluoride solution and a hydrogen chloride solution.
And (5) water washing. And immersing the solar cell into the aqueous solution. Cleaning time of the solar cell: 120 s. The aqueous solution is a deionized water solution.
The third washing step is followed by a pre-dehydration step. And immersing the solar cell piece into pure water, and slowly pulling the solar cell piece. Temperature of pure water: 80 ℃. Pulling rate: and spraying hot air by a hot air knife at 0.5cm/s to scrape the solution on the surface of the solar cell. Temperature of hot air: at 100 ℃. Hot air injection time: 180 s.
The pre-dehydration step is followed by a heat drying step. The solar cell is arranged in the first drying groove, nitrogen is sprayed in the first drying groove, and the nitrogen flows along the surface of the solar cell. Nitrogen gas injection time: 800 s. Temperature of nitrogen gas injection: 85 ℃.
In the description of the embodiments of the present invention, it should be further noted that unless otherwise explicitly stated or limited, the terms "disposed" and "connected" should be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The foregoing description is illustrative of the present invention and is not to be construed as limiting thereof, the scope of the invention being defined by the appended claims, which may be modified in any manner without departing from the basic structure thereof.
Claims (7)
1. A method for manufacturing a solar cell suede is characterized by comprising the following steps: the method comprises the following steps:
a pre-cleaning step; placing the solar cell in the mixed solution for surface cleaning;
a step of removing damage; immersing the solar cell into the solution with the concentration: 7-15 wt% sodium hydroxide solution; polishing time: 120-180 s; polishing temperature: 70-75 ℃;
a step of quickly making a large suede; immersing the solar cell into the solution with the concentration: 2-3 wt%, temperature: sodium hydroxide solution at 80-100 deg.c; corroding the surface of the solar cell to form a pyramid-shaped surface form; reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 13 to 15 percent;
treating the sharp top of the large velvet surface; immersing the solar cell into the solution with the concentration: 10-15 wt%, temperature: sodium hydroxide solution at 80-100 deg.c; the pyramid tip of the pyramid-shaped surface form on the surface of the solar cell is corroded to be flat, and a pyramid base is formed on the surface of the solar cell; reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 16 to 19 percent;
growing a small suede surface; immersing the solar cell into the solution with the concentration: 0.5-1.5 wt%, temperature: sodium hydroxide solution at 75-85 deg.c; the surface of the solar cell is corroded to form a surface shape of a small suede; reaction time of the solar cell: 300-450s, solar cell sheet reflectivity: 8 to 9 percent.
2. The method for manufacturing the textured surface of the solar cell according to claim 1, wherein the method comprises the following steps: placing the solar cell piece at a temperature: mixing the solution at 60-70 deg.C; the mixed solution is a mixed solution of 1% of sodium hydroxide and 3% of hydrogen peroxide; reaction time of the solar cell: 90-150 s.
3. The method for manufacturing the textured surface of the solar cell according to claim 1, wherein the method comprises the following steps: a first cleaning step is also included between the damage removing step and the rapid large suede step; cleaning the surface of the solar cell by adopting a first cleaning solution; the first cleaning solution comprises 25-35ppm of ozone gas and 0.2-0.35 wt% of hydrogen chloride solution; cleaning time of the solar cell: 100-.
4. The method for manufacturing the textured surface of the solar cell according to claim 1, wherein the method comprises the following steps: a second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface; immersing the solar cell into a second cleaning solution; introducing nitrogen into the second cleaning solution, and bubbling to clean the surface of the solar cell; cleaning time of the solar cell: 100-150 s; the second cleaning solution is deionized water.
5. The method for manufacturing the textured surface of the solar cell according to claim 1, wherein the method comprises the following steps: the step of growing the small suede surface comprises a third cleaning step; the third washing step specifically comprises:
an ozone cleaning step; immersing a solar cell into an ozone solution; cleaning time of the solar cell: 90-120 s; the ozone solution comprises 25-35ppm of ozone gas and 0.2-0.35 wt% of hydrogen chloride solution;
cleaning with acid liquor; immersing a solar cell into an acid solution; cleaning time of the solar cell: 90-120 s; the acid solution comprises a hydrogen fluoride solution and a hydrogen chloride solution;
a water cleaning step; immersing a solar cell into an aqueous solution; cleaning time of the solar cell: 90-120 s; the aqueous solution is a deionized water solution.
6. The method for manufacturing the textured surface of the solar cell according to claim 5, wherein the method comprises the following steps: the third cleaning step is followed by a pre-dehydration step; immersing the solar cell into pure water, and slowly lifting the solar cell; temperature of pure water: 50-80 ℃; pulling rate: spraying hot air by a hot air knife at 0.5cm/s to scrape the solution on the surface of the solar cell; temperature of hot air: 70-100 ℃; the hot air injection time is 120-180 s.
7. The method for manufacturing the textured surface of the solar cell according to claim 6, wherein the method comprises the following steps: the pre-dehydration step is followed by a heating and drying step; the solar cell is placed in a first drying groove, nitrogen is sprayed in the first drying groove, and the nitrogen flows along the surface of the solar cell; nitrogen gas injection time: 600 and 800 s; temperature of nitrogen gas injection: 75-85 ℃.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823972A (en) * | 2022-04-01 | 2022-07-29 | 浙江爱旭太阳能科技有限公司 | Solar cell and texturing cleaning method thereof |
| CN115332371A (en) * | 2022-07-27 | 2022-11-11 | 西安隆基乐叶光伏科技有限公司 | Texturing method of silicon wafer and preparation method of solar cell |
| WO2023046070A1 (en) | 2021-09-23 | 2023-03-30 | 天合光能股份有限公司 | Texture structure of solar cell and preparation method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531656A (en) * | 2013-09-05 | 2014-01-22 | 西南科技大学 | Preparation method of textures of monocrystalline silicon piece of solar cell |
| CN107658367A (en) * | 2016-07-26 | 2018-02-02 | 福建金石能源有限公司 | A kind of Wet chemical processing method of hetero-junction solar cell |
| CN108831937A (en) * | 2018-06-25 | 2018-11-16 | 江苏顺风光电科技有限公司 | A kind of flannelette method of modifying of N-type solar battery |
| CN109686651A (en) * | 2018-12-10 | 2019-04-26 | 江苏林洋光伏科技有限公司 | The Ozone cleaning method of solar battery |
| CN110943144A (en) * | 2019-11-29 | 2020-03-31 | 晋能清洁能源科技股份公司 | Texturing and cleaning method for heterojunction battery |
-
2020
- 2020-12-31 CN CN202011627331.XA patent/CN112768555A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531656A (en) * | 2013-09-05 | 2014-01-22 | 西南科技大学 | Preparation method of textures of monocrystalline silicon piece of solar cell |
| CN107658367A (en) * | 2016-07-26 | 2018-02-02 | 福建金石能源有限公司 | A kind of Wet chemical processing method of hetero-junction solar cell |
| CN108831937A (en) * | 2018-06-25 | 2018-11-16 | 江苏顺风光电科技有限公司 | A kind of flannelette method of modifying of N-type solar battery |
| CN109686651A (en) * | 2018-12-10 | 2019-04-26 | 江苏林洋光伏科技有限公司 | The Ozone cleaning method of solar battery |
| CN110943144A (en) * | 2019-11-29 | 2020-03-31 | 晋能清洁能源科技股份公司 | Texturing and cleaning method for heterojunction battery |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023046070A1 (en) | 2021-09-23 | 2023-03-30 | 天合光能股份有限公司 | Texture structure of solar cell and preparation method therefor |
| CN114823972A (en) * | 2022-04-01 | 2022-07-29 | 浙江爱旭太阳能科技有限公司 | Solar cell and texturing cleaning method thereof |
| CN114823972B (en) * | 2022-04-01 | 2024-05-31 | 广东爱旭科技有限公司 | Solar cell and texturing and cleaning method thereof |
| CN115332371A (en) * | 2022-07-27 | 2022-11-11 | 西安隆基乐叶光伏科技有限公司 | Texturing method of silicon wafer and preparation method of solar cell |
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