CN109686651A - The Ozone cleaning method of solar battery - Google Patents
The Ozone cleaning method of solar battery Download PDFInfo
- Publication number
- CN109686651A CN109686651A CN201811502879.4A CN201811502879A CN109686651A CN 109686651 A CN109686651 A CN 109686651A CN 201811502879 A CN201811502879 A CN 201811502879A CN 109686651 A CN109686651 A CN 109686651A
- Authority
- CN
- China
- Prior art keywords
- ozone
- hcl
- water
- mass fraction
- 100ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004140 cleaning Methods 0.000 title claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000006396 nitration reaction Methods 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 17
- 230000035484 reaction time Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a kind of Ozone cleaning methods of solar battery, it is characterised in that increases ozone clean step before conventional HF+HCL nitration mixture cleaning.Cleaning method of the invention can greatly help the removal of organic contamination, be further ensured that the clean-up performance of silicon chip surface, to improve battery conversion efficiency to a certain extent.
Description
Technical field
The invention mainly relates to solar battery manufacturing fields, in particular to a kind of method of wet-cleaning process.
Background technique
With stepping up for solar battery transformation efficiency, the requirement in battery manufacturing process to processing procedure cleanliness is also got over
Come higher, and solar battery is in the production process, it is easy to which by extraneous pollution, therefore the level of wet-cleaning process will be straight
Connect the performance for influencing battery efficiency.
Currently, wet-cleaning process after carrying out corrosion treatment to silicon chip surface, typically uses the system of HF+HCL
Metal impurities and silicon wafer dehydration is played to clean, still, such method cannot remove some organic contaminations well, at certain
A little research and development laboratories, mostly use RCA to clean, but due to H2O2Unstability, be difficult to reach the state of volume production.
Summary of the invention
The present invention is directed to the problem of background technique, proposes a kind of transfer efficiency that solar battery can be improved
Cleaning method.
Technical solution:
A kind of Ozone cleaning method of solar battery, it increases ozone clean before conventional HF+HCL nitration mixture cleaning
Step.
Specific steps are as follows:
S1, conventional prerinse step；
S2, conventional rinse step；
S3, conventional making herbs into wool step；
S4, conventional rinse step；
S5, ozone clean step, the ozone concentration are 5~100ppm；
S6, conventional rinse step；
S7, conventional H F+HCL nitration mixture cleaning step；
S8, conventional rinse step；
S9, conventional slow lifting step；
S10, conventional baking step.
As the first embodiment, in step S5, ozone is dissolved in water using dissolver, so that smelly in water
Oxygen concentration is 5-100ppm, and liquid is heated that temperature is 25-40 DEG C, reaction time 1-6min.
As second of embodiment, in step S5, ozone is dissolved in water using dissolver, so that smelly in water
Oxygen concentration is 5-100ppm, and HF is added into liquid tank, so that the mass fraction of HF is 0.1-5.0%；Liquid is heated again,
Temperature is 25-40 DEG C, reaction time 1-6min.
As the third embodiment, in step S5, ozone is dissolved in water using dissolver, so that smelly in water
Oxygen concentration is 5-100ppm, and HCl is added into liquid tank, so that the mass fraction of HCl is 0.01-1.0%；Liquid is added again
Heat, temperature are 25-35 DEG C, reaction time 1-6min.
As the 4th kind of embodiment, in step S5, ozone is dissolved in water using dissolver, so that smelly in water
Oxygen concentration is 5-100ppm, and HF+HCl is added into liquid tank, so that the mass fraction of HF is 0.1-5.0%, so that HCl
Mass fraction is 0.01-1.0%；Liquid is heated again, temperature is 25-35 DEG C, reaction time 1-6min.
Preferably, in the HF+HCL nitration mixture of step S7, the mass fraction of HF is 0.1-5.0%, and the mass fraction of HCL is
0.01-1.0%.
Beneficial effects of the present invention
Cleaning method of the invention can greatly help the removal of organic contamination, be further ensured that the cleaning of silicon chip surface
Degree, to improve battery conversion efficiency to a certain extent.
Specific embodiment
Below with reference to embodiment, the invention will be further described, and but the scope of the present invention is not limited thereto:
In conjunction with table 1, an ozone clean slot is added in the present invention before HF+HCL slot, can play further clean it is organic
The effect of the impurity such as pollution.
Table 1: newly-increased specification table
| Classification | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
| Conventional steps | Prerinse | Rinsing | Making herbs into wool | Rinsing | HF+HCL | Rinsing | Slow lifting | Drying | ||
| The present invention | Prerinse | Rinsing | Making herbs into wool | Rinsing | Ozone clean | Rinsing | HF+HCL | Rinsing | Slow lifting | Drying |
It is specific:
In the first embodiment, ozone clean step are as follows: be furnished with pure water in reaction tank, using dissolver by ozone
It is dissolved in water, so that the ozone concentration in water is 5-100ppm, and heated: 40 DEG C continue 1 minute, or 25 DEG C of heating
Continue 6 minutes.
In second of embodiment, ozone clean step are as follows: be furnished with pure water in reaction tank, using dissolver by ozone
It is dissolved in water, so that the ozone concentration in water is 5-100ppm, while HF is added into liquid tank, so that the mass fraction of HF
For 0.1-5.0%；Heated again: 40 DEG C continue 1 minute, or 25 DEG C of heating continues 6 minutes.
In the third embodiment, ozone clean step are as follows: be furnished with pure water in reaction tank, using dissolver by ozone
It is dissolved in water, so that the ozone concentration in water is 5-100ppm, while HCl is simultaneously added into liquid tank, so that the quality of HCl
Score is 0.01-1.0%；Heated again: 35 DEG C continue 1 minute, or 25 DEG C of heating continues 6 minutes.
In 4th kind of embodiment, ozone clean step are as follows: be furnished with pure water in reaction tank, using dissolver by ozone
It is dissolved in water, so that the ozone concentration in water is 5-100ppm, while HF+HCl is simultaneously added into liquid tank, so that the matter of HF
Amount score is 0.1-5.0%, so that the mass fraction of HCl is 0.01-1.0%；Heated again: 35 DEG C continue 1 minute, or
25 DEG C of heating continues 6 minutes.
Other steps of the invention are the same as those in the prior art, and details are not described herein again.Pass through ozone clean step, Ke Yiji
The removal of big help organic contamination.HF+HCl cleaning is carried out again after removing organic contamination, can completely remove making herbs into wool addition
Agent liquor residue avoids impurity from being diffused into silicon body by hot processing procedure and pollutes；And by formula adjustment, table can be repaired
Face pattern makes to form more uniform flannelette, can utmostly discharge the junction area of thermal diffusion, more uniform with being formed
PN junction, the contact for being more advantageous to metal grid lines, forms the advantages such as bigger sintering window at more uniform exterior membrane color, thus
The open-circuit voltage, short circuit current and fill factor for effectively improving battery, obtain the battery of more high conversion efficiency.
Specific embodiment described herein is only to illustrate to spirit of that invention.The neck of technology belonging to the present invention
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
Claims (7)
1. a kind of Ozone cleaning method of solar battery, it is characterised in that increased before conventional HF+HCL nitration mixture cleaning smelly
Oxygen cleaning step.
2. according to the method described in claim 1, it is characterized in that specific steps are as follows:
S1, conventional prerinse step；
S2, conventional rinse step；
S3, conventional making herbs into wool step；
S4, conventional rinse step；
S5, ozone clean step, the ozone concentration are 5~100ppm；
S6, conventional rinse step；
S7, conventional H F+HCL nitration mixture cleaning step；
S8, conventional rinse step；
S9, conventional slow lifting step；
S10, conventional baking step.
3. according to the method described in claim 2, it is characterized in that ozone is dissolved in water using dissolver in step S5
In, so that the ozone concentration in water is 5-100ppm, and liquid is heated, temperature is 25-40 DEG C, reaction time 1-6min.
4. according to the method described in claim 2, it is characterized in that ozone is dissolved in water using dissolver in step S5
In, so that the ozone concentration in water is 5-100ppm, and HF is added into liquid tank, so that the mass fraction of HF is 0.1-
5.0%；Liquid is heated again, temperature is 25-40 DEG C, reaction time 1-6min.
5. according to the method described in claim 2, it is characterized in that ozone is dissolved in water using dissolver in step S5
In, so that the ozone concentration in water is 5-100ppm, and HCl is added into liquid tank, so that the mass fraction of HCl is 0.01-
1.0%；Liquid is heated again, temperature is 25-35 DEG C, reaction time 1-6min.
6. according to the method described in claim 2, it is characterized in that ozone is dissolved in water using dissolver in step S5
In, so that the ozone concentration in water is 5-100ppm, and HF+HCl is added into liquid tank, so that the mass fraction of HF is 0.1-
5.0%, so that the mass fraction of HCl is 0.01-1.0%；Liquid is heated again, temperature is 25-35 DEG C, reaction time 1-
6min。
7. according to the method described in claim 2, it is characterized in that in the HF+HCL nitration mixture of step S7, the mass fraction of HF is
The mass fraction of 0.1-5.0%, HCL are 0.01-1.0%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811502879.4A CN109686651A (en) | 2018-12-10 | 2018-12-10 | The Ozone cleaning method of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811502879.4A CN109686651A (en) | 2018-12-10 | 2018-12-10 | The Ozone cleaning method of solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109686651A true CN109686651A (en) | 2019-04-26 |
Family
ID=66187381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811502879.4A Pending CN109686651A (en) | 2018-12-10 | 2018-12-10 | The Ozone cleaning method of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109686651A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459647A (en) * | 2019-08-09 | 2019-11-15 | 江苏日托光伏科技股份有限公司 | A kind of method and apparatus improving large-sized silicon wafers making herbs into wool uniformity |
| CN112768555A (en) * | 2020-12-31 | 2021-05-07 | 中建材浚鑫(桐城)科技有限公司 | Method for manufacturing solar cell suede |
| CN112928181A (en) * | 2021-01-22 | 2021-06-08 | 徐州中辉光伏科技有限公司 | Crystal silicon battery surface treatment device with ozone purging function |
| CN115207154A (en) * | 2021-04-12 | 2022-10-18 | 福建金石能源有限公司 | Heterojunction solar cell texturing and cleaning method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276855A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for cleaning, suede-making and drying silicon solar cell |
| CN101276856A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for etching and drying silicon solar cell |
| CN103189966A (en) * | 2011-05-02 | 2013-07-03 | 三菱电机株式会社 | Method for cleaning silicon substrate, and method for producing solar cell |
| US9453190B1 (en) * | 2015-11-12 | 2016-09-27 | International Business Machines Corporation | Surface treatment of textured silicon |
| CN107431099A (en) * | 2015-03-24 | 2017-12-01 | 株式会社钟化 | The manufacture method of the manufacture method of crystalline silicon substrate used for solar batteries, the manufacture method of crystalline silicon solar cell and crystalline silicon solar module |
| CN107482081A (en) * | 2017-07-20 | 2017-12-15 | 东莞南玻光伏科技有限公司 | Solar battery sheet and preparation method thereof and solar cell |
| CN107623056A (en) * | 2017-09-29 | 2018-01-23 | 常州大学 | The nanometer suede surface defect repair method that a kind of reactive ion etching method is formed |
| CN107658367A (en) * | 2016-07-26 | 2018-02-02 | 福建金石能源有限公司 | A kind of Wet chemical processing method of hetero-junction solar cell |
| CN107675263A (en) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏（江苏）有限公司 | The optimization method of monocrystalline silicon pyramid structure matte |
| CN107924836A (en) * | 2016-05-26 | 2018-04-17 | 南京中云新材料有限公司 | A kind of textured method of monocrystalline silicon sheet surface |
-
2018
- 2018-12-10 CN CN201811502879.4A patent/CN109686651A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276855A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for cleaning, suede-making and drying silicon solar cell |
| CN101276856A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for etching and drying silicon solar cell |
| CN103189966A (en) * | 2011-05-02 | 2013-07-03 | 三菱电机株式会社 | Method for cleaning silicon substrate, and method for producing solar cell |
| CN107431099A (en) * | 2015-03-24 | 2017-12-01 | 株式会社钟化 | The manufacture method of the manufacture method of crystalline silicon substrate used for solar batteries, the manufacture method of crystalline silicon solar cell and crystalline silicon solar module |
| US9453190B1 (en) * | 2015-11-12 | 2016-09-27 | International Business Machines Corporation | Surface treatment of textured silicon |
| CN107924836A (en) * | 2016-05-26 | 2018-04-17 | 南京中云新材料有限公司 | A kind of textured method of monocrystalline silicon sheet surface |
| CN107658367A (en) * | 2016-07-26 | 2018-02-02 | 福建金石能源有限公司 | A kind of Wet chemical processing method of hetero-junction solar cell |
| CN107482081A (en) * | 2017-07-20 | 2017-12-15 | 东莞南玻光伏科技有限公司 | Solar battery sheet and preparation method thereof and solar cell |
| CN107675263A (en) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏（江苏）有限公司 | The optimization method of monocrystalline silicon pyramid structure matte |
| CN107623056A (en) * | 2017-09-29 | 2018-01-23 | 常州大学 | The nanometer suede surface defect repair method that a kind of reactive ion etching method is formed |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459647A (en) * | 2019-08-09 | 2019-11-15 | 江苏日托光伏科技股份有限公司 | A kind of method and apparatus improving large-sized silicon wafers making herbs into wool uniformity |
| CN112768555A (en) * | 2020-12-31 | 2021-05-07 | 中建材浚鑫(桐城)科技有限公司 | Method for manufacturing solar cell suede |
| CN112928181A (en) * | 2021-01-22 | 2021-06-08 | 徐州中辉光伏科技有限公司 | Crystal silicon battery surface treatment device with ozone purging function |
| CN115207154A (en) * | 2021-04-12 | 2022-10-18 | 福建金石能源有限公司 | Heterojunction solar cell texturing and cleaning method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109686651A (en) | The Ozone cleaning method of solar battery | |
| CN102154711A (en) | Monocrystal silicon cleaning liquid and precleaning process | |
| TWI511196B (en) | Method of Polishing Silica Flocking Cleaning Process | |
| CN101876088B (en) | Polycrystalline silicon texturing method | |
| CN104009122B (en) | The do over again processing method of silicon chip of a kind of serigraphy | |
| CN103480598B (en) | Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment | |
| CN107658367A (en) | A kind of Wet chemical processing method of hetero-junction solar cell | |
| CN101276856A (en) | Process and equipment for etching and drying silicon solar cell | |
| CN110416064B (en) | Method for removing oil stains on silicon wafer | |
| CN102403251B (en) | Prewashing solution of crystal silicon wafer and prewashing technology thereof | |
| CN104377119B (en) | Method for cleaning germanium single crystal polished wafer | |
| CN102412173A (en) | Cut/ground silicon wafer surface cleaning apparatus | |
| CN103700733A (en) | Cleaning treatment method of N-type crystalline silicon substrate of solar cell | |
| CN105931947A (en) | Cleaning method of silicon wafer | |
| JP6275090B2 (en) | Process separation type substrate processing apparatus and processing method | |
| CN105742159A (en) | Cleaning method for quartz devices used by diffusion process in manufacturing of photovoltaic cell | |
| CN109821810A (en) | A kind of sapphire substrate sheet finished product cleaning process | |
| CN105655248A (en) | Alkali corrosion processing method for photoetching alignment mark of non-polished monocrystal-silicon-based device | |
| CN116072517A (en) | Method for recycling sapphire substrate | |
| CN201611648U (en) | Wet etching equipment | |
| CN214384756U (en) | Texturing apparatus | |
| CN109148262A (en) | A kind of cleaning method of the black silicon wafer of solar energy polycrystal | |
| CN116651811A (en) | Silicon wafer cleaning and drying method | |
| CN114639595A (en) | Cleaning process for improving surface cleanliness of large-size polished wafer | |
| CN107123582A (en) | A kind of chemical cleaning method of GaAs photocathodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190426 |
|
| RJ01 | Rejection of invention patent application after publication |