CN111326401A - Method for cleaning metal layer of power semiconductor device - Google Patents
Method for cleaning metal layer of power semiconductor device Download PDFInfo
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- CN111326401A CN111326401A CN201811541783.9A CN201811541783A CN111326401A CN 111326401 A CN111326401 A CN 111326401A CN 201811541783 A CN201811541783 A CN 201811541783A CN 111326401 A CN111326401 A CN 111326401A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 160
- 239000002184 metal Substances 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000243 solution Substances 0.000 claims abstract description 79
- 239000011259 mixed solution Substances 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical class [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 238000002791 soaking Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for cleaning a metal layer of a power semiconductor device. The method comprises the following steps: sequentially cleaning the power semiconductor device coated with the metal layer by using a first cleaning solution, a second cleaning solution, a third cleaning solution, a fourth cleaning solution and a fifth cleaning solution; the first cleaning liquid is H2SO4And H2O2The mixed solution of (1); the second cleaning solution is HF solution; the third cleaning solution is H2O2A solution; the fourth cleaning solution is NH3·H2O and H2O2The mixed solution of (1); the fifth cleaning solution is HCl and H2O2The mixed solution of (1). The cleaning method can effectively solve the appearance abnormal phenomenon in the metal process of the power semiconductor device, is simple and easy to implement, does not increase the manufacturing cost, and is suitable for industrial mass production.
Description
Technical Field
The invention relates to a method for cleaning a metal layer of a power semiconductor device.
Background
The power semiconductor device with the large-size through hole, such as a fast recovery diode and other devices, has a simple structure, but in a metal process, appearance abnormality of a metal surface often occurs, as shown in fig. 1, spots with different sizes appear on the metal surface of the power semiconductor device, and appearance scoring of a product is seriously influenced.
However, it is currently believed in the art that the metal surface spots are caused by metal sputtering, and conventionally solved by increasing the metal cleaning time and number of times, and using IPA drying or the like, but these methods have not solved the problem.
Therefore, how to overcome the appearance anomaly phenomenon in the metal process of the power semiconductor device is an urgent technical problem to be solved in the field.
Disclosure of Invention
The invention provides a method for cleaning a metal layer of a power semiconductor device, aiming at overcoming the defect of abnormal appearance of the metal surface of the power device with a large-size through hole in the prior art in the metal process. The metal cleaning process provided by the invention eliminates the appearance abnormal phenomenon in the metal process of the power semiconductor device.
Repeated experiments show that the appearance abnormal phenomenon in the metal process of the power semiconductor device is caused by uneven corrosion to the silicon surface in the metal pre-cleaning process, and further, the cleaning process is optimized by the inventor.
The invention provides a method for cleaning a metal layer of a power semiconductor device, which comprises the following steps: sequentially cleaning the power semiconductor device coated with the metal layer by using a first cleaning solution, a second cleaning solution, a third cleaning solution, a fourth cleaning solution and a fifth cleaning solution;
the first cleaning liquid is H2SO4And H2O2The mixed solution of (1);
the second cleaning solution is an HF solution;
the third cleaning solution is H2O2A solution;
the fourth cleaning solution is NH3·H2O and H2O2The mixed solution of (1);
the fifth cleaning solution is HCl and H2O2The mixed solution of (1).
In the present invention, the power semiconductor device may be a power semiconductor device conventional in the art, and generally refers to an electronic device with high power in the field of electric energy conversion and control circuits for power equipment, for example, a semiconductor device with an electrode contact hole of 100 μm or more.
In the present invention, in the first cleaning liquid, the H is2SO4The concentration of (b) is preferably 75 to 85%, for example 78%, and the percentage is mass%.
In the present invention, in the first cleaning liquid, the H is2O2The concentration of (b) is preferably 5 to 15%, for example 10%, the percentage being mass%.
In the present invention, preferably, the first cleaning solution is 78% H2SO4And 10% of H2O2The percentage of the mixed solution is mass percentage.
In the invention, the cleaning time of the first cleaning liquid can be the conventional cleaning time in the field, and is preferably 20-40 seconds.
In the present invention, the concentration of HF in the second cleaning liquid is preferably 0.1 to 1.0%, for example, 0.5%, and the percentage is a mass percentage.
In the invention, the cleaning time of the second cleaning liquid can be the conventional cleaning time in the field, and is preferably 10-30 seconds.
In the present invention, in the third cleaning solution, the H2O2The concentration of (b) is preferably 5 to 15%, for example 10%, the percentage being mass%.
In the invention, the cleaning time of the third cleaning solution can be the conventional cleaning time in the field, and is preferably 80-120 seconds.
In the present invention, in the fourth cleaning liquid, the NH may be3·H2The concentration of O is preferably 0.01 to 0.1%, for example 0.04%, and the percentage is the volume percentage of the saturated aqueous ammonia solution in the fourth cleaning solution.
In the present invention, in the fourth cleaning solution, the H is2O2The concentration of (b) is preferably 5 to 15%, for example 10%, the percentage being mass%.
In the present invention, preferably, the fourth cleaning solution is 0.04% NH3·H2O (percentage is volume percentage of saturated ammonia solution in mixed solution) and 10% H2O2(the percentage is mass percent).
In the present invention, the cleaning time of the fourth cleaning solution may be a cleaning time conventionally used in the art, and is preferably 50 to 70 seconds.
In the present invention, in the fifth cleaning liquid, the concentration of HCl is preferably 0.1 to 1.0%, for example, 0.125%, and the percentage is a mass percentage.
In the present invention, in the fifth cleaning liquid, the H is2O2The concentration of (b) is preferably 5 to 15%, for example 10%, the percentage being mass%.
In the present invention, preferably, the fifth cleaning solution is 0.125% HCl and 10% H2O2The percentage of the mixed solution of (2) is a mass percentage.
In the invention, the cleaning time of the fifth cleaning liquid can be the conventional cleaning time in the field, and is preferably 40-60 seconds.
In the present invention, the cleaning means may be a cleaning means conventional in the art, such as a soaking cleaning or a spray cleaning.
In the present invention, the amount of each cleaning solution may be determined according to the cleaning manner, and generally, at least the metal layer of the power semiconductor device should be covered or soaked by the cleaning solution for the purpose of cleaning.
As known to those skilled in the art, the power semiconductor device is generally washed with water, dried and then washed with the next step after being washed with each cleaning solution.
Those skilled in the art will appreciate that after cleaning, it is typically necessary to spin dry the fabric.
In a preferred embodiment of the present invention, the cleaning time of the first cleaning liquid is 20 to 40 seconds, the cleaning time of the second cleaning liquid is 10 to 30 seconds, the cleaning time of the third cleaning liquid is 80 to 120 seconds, the cleaning time of the fourth cleaning liquid is 50 to 70 seconds, and the cleaning time of the fifth cleaning liquid is 40 to 60 seconds.
In a preferred embodiment of the present invention, the first cleaning solution is 78% H2SO4And 10% of H2O2The percentage of the mixed solution is mass percentage; the second cleaning solution is 0.5% of HF solution, and the percentage is mass percentage; the third cleaning solution is 10% H2O2The solution comprises the following components in percentage by mass; the fourth cleaning solution is 0.04% NH3·H2O (percentage is volume percentage of saturated ammonia solution in mixed solution) and 10% H2O2(the percentage is mass percent) of the mixed solution; the fifth cleaning solution is 0.125% HCl and 10% H2O2The percentage of the mixed solution of (2) is a mass percentage.
On the basis of the common knowledge in the field, the above preferred conditions can be combined randomly to obtain the preferred embodiments of the invention.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows:
1. the invention can solve the appearance abnormal phenomenon in the metal process of the power semiconductor device;
2. the cleaning method is simple and easy to implement, does not increase the manufacturing cost, and is suitable for industrial mass production.
Drawings
Fig. 1 is an abnormal appearance diagram of a metal surface of a power semiconductor device.
Fig. 2 is an appearance view of a metal surface after cleaning of the power semiconductor device in example 1.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
Example 1
A semiconductor device with an electrode contact hole more than 100 μm is cleaned according to the following steps, as shown in FIG. 1, when the appearance of the metal surface is abnormal:
(1)78％H2SO4and 10% of H2O2In the mixing ofCleaning the solution for 20-40 seconds, wherein the percentage is mass percentage;
(2) cleaning with 0.5% HF solution for 10-30 seconds in percentage by mass;
(3)10％H2O2cleaning the solution for 80-120 seconds, wherein the percentage is mass percentage;
(4)0.04％NH3·H2o (percentage is volume percentage of saturated ammonia solution in mixed solution) and 10% H2O2Cleaning the mixed solution (by mass percent) for 50-70 seconds;
(5) 0.125% HCl and 10% H2O2The mixed solution is cleaned for 40-60 seconds, and the percentage is mass percentage.
The power semiconductor device cleaned in this example was taken, and the metal surface was free from circular spots by appearance inspection with a microscope, and the result is shown in fig. 2.
Comparative example 1
A semiconductor device with an electrode contact hole more than 100 μm is cleaned according to the following steps, as shown in FIG. 1, when the appearance of the metal surface is abnormal:
(1)78％H2SO4and 10% of H2O2Cleaning the mixed solution for 20-40 seconds, wherein the percentage is mass percentage;
(2) cleaning with 0.5% HF solution for 10-30 seconds in percentage by mass;
(3)0.04％NH3·H2o (percentage is volume percentage of saturated ammonia solution in mixed solution) and 10% H2O2Cleaning the mixed solution (by mass percent) for 50-70 seconds;
(4) 0.125% HCl and 10% H2O2The mixed solution is cleaned for 40-60 seconds, and the percentage is mass percentage.
The power semiconductor device cleaned in this comparative example was taken, and the metal surface had circular spots as shown in fig. 1 by appearance inspection with a microscope.
Comparative example 2
A semiconductor device with an electrode contact hole more than 100 μm is cleaned according to the following steps, as shown in FIG. 1, when the appearance of the metal surface is abnormal:
(1)0.04％NH3·H2o (percentage is volume percentage of saturated ammonia solution in mixed solution) and 10% H2O2Cleaning the mixed solution (by mass percent) for 50-60 seconds;
(2) 0.125% HCl and 10% H2O2The mixed solution is cleaned for 30-50 seconds, and the percentage is mass percentage;
(3) and cleaning for 120 seconds by using 0.5% HF solution, wherein the percentage is the mass percentage.
The power semiconductor device cleaned in this comparative example was taken, and the metal surface had circular spots as shown in fig. 1 by appearance inspection with a microscope.
Comparative example 3
A semiconductor device with an electrode contact hole more than 100 μm is cleaned according to the following steps, as shown in FIG. 1, when the appearance of the metal surface is abnormal:
(1)0.04％NH3·H2o (percentage is volume percentage of saturated ammonia solution in mixed solution) and 10% H2O2Cleaning the mixed solution (by mass percent) for 60-70 seconds;
(2) 0.125% HCl and 10% H2O2Cleaning the mixed solution for 120-150 seconds, wherein the percentage is mass percentage;
(3) cleaning for 100 seconds by using 0.5 percent HF solution, wherein the percentage is the mass percentage;
(4)10％H2O2and cleaning the solution for 50-60 seconds, wherein the percentage is mass percent.
By taking the power semiconductor device cleaned in the comparative example, the metal surface circular spots are more dense and the appearance abnormality is more serious than that in fig. 1 through appearance inspection by a microscope.
Claims (10)
1. A method for cleaning a metal layer of a power semiconductor device is characterized by comprising the following steps: sequentially cleaning the power semiconductor device coated with the metal layer by using a first cleaning solution, a second cleaning solution, a third cleaning solution, a fourth cleaning solution and a fifth cleaning solution;
the first cleaning liquid is H2SO4And H2O2The mixed solution of (1);
the second cleaning solution is an HF solution;
the third cleaning solution is H2O2A solution;
the fourth cleaning solution is NH3·H2O and H2O2The mixed solution of (1);
the fifth cleaning solution is HCl and H2O2The mixed solution of (1).
2. The cleaning method according to claim 1, wherein in the first cleaning liquid, the H is2SO4The concentration of (A) is 75-85%, preferably 78%, and the percentage is mass percentage;
and/or, in the first cleaning liquid, the H2O2The concentration of (a) is 5-15%, preferably 10%, and the percentage is mass percentage;
and/or the cleaning time of the first cleaning liquid is 20-40 seconds.
3. The cleaning method according to claim 1, wherein the concentration of the HF in the second cleaning liquid is 0.1 to 1.0%, preferably 0.5%, and the percentage is mass percent;
and/or the cleaning time of the second cleaning liquid is 10-30 seconds.
4. The cleaning method according to claim 1, wherein in the third cleaning solution, the H is2O2The concentration of (a) is 5-15%, preferably 10%, and the percentage is mass percentage;
and/or the cleaning time of the third cleaning solution is 80-120 seconds.
5. The cleaning method according to claim 1, wherein the fourth cleaning solution isNH of said3·H2The concentration of O is 0.01-0.1%, preferably 0.04%, and the percentage refers to the volume percentage of a saturated ammonia water solution in the fourth cleaning solution;
and/or, in the fourth washing liquid, the H2O2The concentration of (a) is 5-15%, preferably 10%, and the percentage is mass percentage;
and/or the cleaning time of the fourth cleaning solution is 50-70 seconds.
6. The cleaning method according to claim 1, wherein the concentration of HCl in the fifth cleaning solution is 0.1 to 1.0%, preferably 0.125%, and the percentages refer to mass percent;
and/or, in the fifth cleaning solution, the H2O2The concentration of (a) is 5-15%, preferably 10%, and the percentage is mass percentage;
and/or the cleaning time of the fifth cleaning liquid is 40-60 seconds.
7. The cleaning method of claim 1, wherein the first cleaning solution is 78% H2SO4And 10% of H2O2The percentage of the mixed solution is mass percentage;
and/or the fourth cleaning solution is 0.04% NH3·H2O and 10% H2O2The mixed solution of (1), said NH3·H2The percentage of O is the volume percentage of the saturated ammonia water solution in the mixed solution, and the percentage of H is2O2The percentage of (A) is mass percentage;
and/or the fifth cleaning solution is 0.125% HCl and 10% H2O2The percentage of the mixed solution of (2) is a mass percentage.
8. The cleaning method according to claim 1, wherein the cleaning time of the first cleaning liquid is 20 to 40 seconds, the cleaning time of the second cleaning liquid is 10 to 30 seconds, the cleaning time of the third cleaning liquid is 80 to 120 seconds, the cleaning time of the fourth cleaning liquid is 50 to 70 seconds, and the cleaning time of the fifth cleaning liquid is 40 to 60 seconds.
9. The cleaning method of claim 1, wherein the first cleaning solution is 78% H2SO4And 10% of H2O2The percentage of the mixed solution is mass percentage;
the second cleaning solution is 0.5% of HF solution, and the percentage is mass percentage;
the third cleaning solution is 10% H2O2The solution comprises the following components in percentage by mass;
the fourth cleaning solution is 0.04% NH3·H2O and 10% H2O2The mixed solution of (1); the NH3·H2The percentage of O is the volume percentage of the saturated ammonia water solution in the mixed solution, and the percentage of H is2O2The percentage of (A) is mass percentage;
the fifth cleaning solution is 0.125% HCl and 10% H2O2The percentage of the mixed solution of (2) is a mass percentage.
10. The cleaning method according to any one of claims 1 to 9, wherein the power semiconductor device is a semiconductor device having an electrode contact hole of 100 μm or more;
and/or the cleaning mode is soaking cleaning or spraying cleaning;
and/or the power semiconductor device is washed by the cleaning solution, washed by water, dried and then washed by the next step.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811541783.9A CN111326401B (en) | 2018-12-17 | 2018-12-17 | Method for cleaning metal layer of power semiconductor device |
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| CN201811541783.9A CN111326401B (en) | 2018-12-17 | 2018-12-17 | Method for cleaning metal layer of power semiconductor device |
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| CN111326401B CN111326401B (en) | 2024-07-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112958539A (en) * | 2021-03-23 | 2021-06-15 | 上海米蜂激光科技有限公司 | Cleaning method of germanium lens |
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| JPH0963999A (en) * | 1995-08-21 | 1997-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Washing method of metal holder |
| KR20060134323A (en) * | 2005-06-22 | 2006-12-28 | 주식회사 하이닉스반도체 | Method of fabricating w-metal contact having low contact resistance in semiconductor device |
| JP2012114291A (en) * | 2010-11-25 | 2012-06-14 | Mitsubishi Electric Corp | Method and device for cleaning semiconductor wafer |
| CN105914137A (en) * | 2016-06-23 | 2016-08-31 | 无锡宏纳科技有限公司 | Wet silicon wafer cleaning method |
| CN108269733A (en) * | 2017-12-19 | 2018-07-10 | 君泰创新（北京）科技有限公司 | A kind of silicon wafer cleaning method |
-
2018
- 2018-12-17 CN CN201811541783.9A patent/CN111326401B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0963999A (en) * | 1995-08-21 | 1997-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Washing method of metal holder |
| KR20060134323A (en) * | 2005-06-22 | 2006-12-28 | 주식회사 하이닉스반도체 | Method of fabricating w-metal contact having low contact resistance in semiconductor device |
| JP2012114291A (en) * | 2010-11-25 | 2012-06-14 | Mitsubishi Electric Corp | Method and device for cleaning semiconductor wafer |
| CN105914137A (en) * | 2016-06-23 | 2016-08-31 | 无锡宏纳科技有限公司 | Wet silicon wafer cleaning method |
| CN108269733A (en) * | 2017-12-19 | 2018-07-10 | 君泰创新（北京）科技有限公司 | A kind of silicon wafer cleaning method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112958539A (en) * | 2021-03-23 | 2021-06-15 | 上海米蜂激光科技有限公司 | Cleaning method of germanium lens |
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