CN108630522A - The cleaning method of chip surface - Google Patents
The cleaning method of chip surface Download PDFInfo
- Publication number
- CN108630522A CN108630522A CN201710173274.4A CN201710173274A CN108630522A CN 108630522 A CN108630522 A CN 108630522A CN 201710173274 A CN201710173274 A CN 201710173274A CN 108630522 A CN108630522 A CN 108630522A
- Authority
- CN
- China
- Prior art keywords
- chip
- cleaning method
- cleaned
- ultrasonic wave
- chip surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Abstract
The present invention chip surface cleaning method, include successively：Chip is placed in alkaline solution and is cleaned using ultrasonic wave；The chip is placed in the mixed liquor of isopropyl alcohol and water and is cleaned using ultrasonic wave；The chip is placed in citric acid solution to be cleaned using ultrasonic wave；And rinse the chip with deionized water.This method can efficiently remove the residue on chip surface, prevent from causing to corrode to chip, to improve the service life of chip.
Description
Technical field
The present invention relates to semiconductor chip cleaning field more particularly to a kind of cleaning methods of chip surface.
Background technology
It is required in IC chip manufacturing process as integrated circuit feature size enters the deep-submicron stage
The cleanliness factor of chip surface is higher and higher, in order to ensure the cleanliness factor on chip material surface, is deposited in the manufacturing process of integrated circuit
In hundreds of road cleanings.
Traditional cleaning way is to utilize deionized water flushing chip, and in this mode, deionized water is with very high flow
Impact chip, by chip impurity and pollutant wash away, to reach cleaning performance.But this cleaning method is to chip
Impact force is excessive, be easy to cause the damage of element pattern, and the utilization rate of the deionized water of this cleaning way is low, causes to provide
Source wastes.Another cleaning way is to carry out soaking and washing using hydrochloric acid or hydrofluoric acid, however, the cleaning effect of such cleaning method
Fruit is bad, and the solution of remained on surface can cause to corrode to chip surface.
So there is an urgent need for a kind of cleaning method of improved chip surface, with the defect more than overcoming.
Invention content
The purpose of the present invention is to provide a kind of cleaning methods of chip surface, can efficiently remove residual on chip surface
Object is stayed, prevents that chip is caused to corrode, to improve the service life of chip.
To achieve the above object, the cleaning method of chip surface of the invention, includes the following steps successively：
Compared with prior art, the cleaning method of chip surface of the invention uses alkaline solution, isopropyl alcohol and water successively
Mixed solution, citric acid solution and deionized water cleaned, and in cleaning process use ultrasonic cleaning technology,
Residue and damaging layer can be effectively removed under the booster action of supersonic oscillations, cleaning performance is more preferable, and surface cleanliness is big
To improve, service life is extended.
Preferably, further including after the step of rinsing the chip with deionized water：Carbon is added in the deionized water
Hydrogen solvent is cleaned.
Preferably, further including after the step of hydrocarbon solvent is cleaned is added：Chip is taken out simultaneously from cleaning solution
Carry out heat content drying.
Preferably, further including before chip is placed in the step of being cleaned using ultrasonic wave in alkaline solution：Spend from
Sub- water conservancy carries out prerinse with ultrasonic wave to chip, and the temperature of deionized water is 50~60 degree.
Preferably, the power of ultrasonic wave is 20W~30W, frequency is 40KHz~50KHz.
Preferably, the temperature of the alkaline solution is 80~90 degree, scavenging period in the alkaline solution for 50~
10 minutes.
Preferably, the sodium hydroxide solution that the alkaline solution is a concentration of 2%~5%.
Preferably, the rinsing time for rinsing the chip with deionized water is 20~30 minutes.
Preferably, the pH value of the citric acid solution is 5~6.
Specific implementation mode
The cleaning method of the chip surface of the present invention is described further with reference to embodiment, but is not so limited this
Invention.
One embodiment of the cleaning method of the chip surface of the present invention includes the following steps successively：
Chip is placed in alkaline solution and is cleaned using ultrasonic wave；
The chip is placed in the mixed liquor of isopropyl alcohol and water and is cleaned using ultrasonic wave；
The chip is placed in citric acid solution to be cleaned using ultrasonic wave；And
The chip is rinsed with deionized water.
The cleaning method of the chip surface of the present invention uses alkaline solution, the mixed solution of isopropyl alcohol and water, lemon successively
Acid solution and deionized water are cleaned, and ultrasonic cleaning technology is used in cleaning process, in supersonic oscillations
Residue and damaging layer can be effectively removed under booster action, cleaning performance is more preferable, and surface cleanliness greatly improves, service life
Extended.
In another embodiment, the cleaning method of the chip surface includes the following steps successively：
Prerinse：Prerinse is carried out to chip using ultrasonic wave with deionized water, the temperature of deionized water is 50~60 degree,
Specifically, the power of the ultrasonic wave is 30W, frequency 50KHz.
Alkali cleaning：Chip is placed in alkaline solution and is cleaned using ultrasonic wave, and the temperature of alkaline solution is 80~90 degree, compared with
Goodly, the alkaline solution can be sodium hydroxide solution, a concentration of 2%~5%, scavenging period be 5~10 minutes, in this step
In, the temperature of sodium hydroxide solution is unsuitable excessively high, is such as preferred for 20~25 degree.The power of ultrasonic wave is 20W, frequency 40KHz.
Organic solvent cleans：Chip is placed in the mixed liquor of isopropyl alcohol and water and is cleaned using ultrasonic wave, the time be 5~
10 minutes, for the power of ultrasonic wave in 20~30W, frequency was 40KHz~50KHz.The step can active solvent removal chip surface
Organic residue.
Pickling：The mixed liquor of citric acid and deionized water is prepared, the pH value of mixed liquor is 5~6.Chip is placed in the acid
In property solution, by cleaned by ultrasonic vibration technology, chip surface is made quickly to carry out neutralization reaction.
Deionized water rinses：The chip is rinsed with deionized water, rinsing time is 20~30 minutes, by rinsing, chip
The cleaning solutions such as acid solution, the lye on surface residual is rinsed clean.
Hydrocarbon cleaning：Hydrocarbon solvent is added in the deionized water of previous step, then excludes deionized water.
Heat content is dried：Chip is taken out to from cleaning solution and is carried out heat content drying, which utilizes the change of temperature, pressure
Change, reduces the enthalpy on chip, make Liquid Residue rapid evaporation.
More than, in conjunction with preferred embodiment, present invention is described, cleaning combination alkali cleaning of the invention, organic solvent,
The multiple cleanings such as pickling, deionization rinsing, and cleaned by ultrasonic vibration technology is used, to effectively remove the residual of chip surface
Object and damaging layer are stayed, is prolonged the service life to reduce chip surface burn into.
Above disclosed is only presently preferred embodiments of the present invention, cannot limit the right of the present invention with this certainly
Range, therefore according to equivalent variations made by scope of the present invention patent, be still within the scope of the present invention.
Claims (9)
1. a kind of cleaning method of chip surface, includes the following steps successively：
Chip is placed in alkaline solution and is cleaned using ultrasonic wave；
The chip is placed in the mixed liquor of isopropyl alcohol and water and is cleaned using ultrasonic wave；
The chip is placed in citric acid solution to be cleaned using ultrasonic wave；And
The chip is rinsed with deionized water.
2. the cleaning method of chip surface as described in claim 1, it is characterised in that：The chip is being rinsed with deionized water
Further include after step：Hydrocarbon solvent is added in the deionized water to be cleaned.
3. the cleaning method of chip surface as claimed in claim 2, it is characterised in that：The step that hydrocarbon solvent is cleaned is added
Further include after rapid：Chip is taken out from cleaning solution and carries out heat content drying.
4. the cleaning method of chip surface as described in claim 1, it is characterised in that：It is placed in alkaline solution and utilizes in chip
Further include before the step of ultrasonic wave is cleaned：Prerinse, deionized water are carried out to chip using ultrasonic wave with deionized water
Temperature be 50~60 degree.
5. the cleaning method of chip surface as described in claim 1, it is characterised in that：The power of ultrasonic wave is 20W~30W,
Frequency is 40KHz~50KHz.
6. the cleaning method of chip surface as described in claim 1, it is characterised in that：The temperature of the alkaline solution be 80~
90 degree, the scavenging period in the alkaline solution is 50~10 minutes.
7. the cleaning method of chip surface as claimed in claim 6, it is characterised in that：The alkaline solution is a concentration of 2%
~5% sodium hydroxide solution.
8. the cleaning method of chip surface as described in claim 1, it is characterised in that：The drift of the chip is rinsed with deionized water
It is 20~30 minutes to wash the time.
9. the cleaning method of chip surface as described in claim 1, it is characterised in that：The pH value of the citric acid solution is 5
~6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710173274.4A CN108630522A (en) | 2017-03-22 | 2017-03-22 | The cleaning method of chip surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710173274.4A CN108630522A (en) | 2017-03-22 | 2017-03-22 | The cleaning method of chip surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108630522A true CN108630522A (en) | 2018-10-09 |
Family
ID=63707005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710173274.4A Pending CN108630522A (en) | 2017-03-22 | 2017-03-22 | The cleaning method of chip surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108630522A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110434112A (en) * | 2019-08-09 | 2019-11-12 | 无锡市芯飞通光电科技有限公司 | A kind of chip cleaning process |
| CN111092011A (en) * | 2018-10-23 | 2020-05-01 | 山东浪潮华光光电子股份有限公司 | Treatment method for improving surface pollution of LED chip |
| CN111192816A (en) * | 2018-11-15 | 2020-05-22 | 东莞新科技术研究开发有限公司 | Semiconductor workpiece cleaning method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| CN1906738A (en) * | 2004-06-28 | 2007-01-31 | 住友电气工业株式会社 | GaAs substrate cleaning method, GaAs substrate manufacturing method, epitaxial substrate manufacturing method and GaAs wafer |
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
-
2017
- 2017-03-22 CN CN201710173274.4A patent/CN108630522A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1906738A (en) * | 2004-06-28 | 2007-01-31 | 住友电气工业株式会社 | GaAs substrate cleaning method, GaAs substrate manufacturing method, epitaxial substrate manufacturing method and GaAs wafer |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| CN101087007A (en) * | 2007-05-11 | 2007-12-12 | 上海明兴开城超音波科技有限公司 | Chemical etching, cleaning and drying method of single-crystal silicon solar battery and integrated processing machine |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092011A (en) * | 2018-10-23 | 2020-05-01 | 山东浪潮华光光电子股份有限公司 | Treatment method for improving surface pollution of LED chip |
| CN111092011B (en) * | 2018-10-23 | 2022-09-16 | 山东浪潮华光光电子股份有限公司 | Treatment method for improving surface pollution of LED chip |
| CN111192816A (en) * | 2018-11-15 | 2020-05-22 | 东莞新科技术研究开发有限公司 | Semiconductor workpiece cleaning method |
| CN110434112A (en) * | 2019-08-09 | 2019-11-12 | 无锡市芯飞通光电科技有限公司 | A kind of chip cleaning process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105280477B (en) | A kind of cleaning of sapphire wafer | |
| CN100428419C (en) | Method for cleaning gallium arsenide crystal chip | |
| CN103008311B (en) | A kind of dry-type cleaning method based on ultraviolet light | |
| CN102294332B (en) | Method for cleaning silicon wafer linearly cut by diamond | |
| CN108630522A (en) | The cleaning method of chip surface | |
| CN105195487B (en) | A kind of quartz glass cleaning method | |
| CN106000977B (en) | A kind of method of gallium arsenide single-crystal wafer cleaning | |
| CN113675073B (en) | Wafer cleaning method | |
| CN102218410A (en) | Method for cleaning polished sapphire | |
| CN101879509A (en) | Liquid crystal screen cleaning method | |
| CN101154558A (en) | Method for cleaning etching equipment component | |
| WO2023202192A1 (en) | Method for cleaning single-side-polished lithium niobate wafer | |
| CN104195575A (en) | Cleaning method for removing TiN and Ti films attached to surface of metal part | |
| CN107051967A (en) | A kind of high-precision cleaning for having a particulate matter requirement | |
| CN111211042B (en) | Cleaning process for improving surface cleanliness of side-polished large-diameter silicon wafer | |
| CN111804674A (en) | Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment | |
| CN211265420U (en) | Cleaning system for improving surface cleanliness of side-polished large-diameter silicon wafer | |
| CN102698983A (en) | Cleaning method for solar energy level silicon slice | |
| CN1979770A (en) | Method for washing contact hole | |
| CN109712866A (en) | The cleaning method of wafer | |
| CN108511316A (en) | The cleaning method of semiconductor wafer | |
| CN102069078A (en) | Method for improving wafer cleaning defects | |
| JP2007214412A (en) | Semiconductor substrate cleaning method | |
| CN104576319A (en) | Cleaning method for removing binder on surface of bonding sheet obtained after silicon wafer back metal deposition process is conducted | |
| CN102806217A (en) | Method for washing silicon wafer by organic solvent |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181009 |