CN111804674A - Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment - Google Patents
Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment Download PDFInfo
- Publication number
- CN111804674A CN111804674A CN202010343187.0A CN202010343187A CN111804674A CN 111804674 A CN111804674 A CN 111804674A CN 202010343187 A CN202010343187 A CN 202010343187A CN 111804674 A CN111804674 A CN 111804674A
- Authority
- CN
- China
- Prior art keywords
- parts
- cleaning
- drying
- pollutants
- method comprises
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004140 cleaning Methods 0.000 title claims abstract description 29
- 239000003344 environmental pollutant Substances 0.000 title claims abstract description 21
- 231100000719 pollutant Toxicity 0.000 title claims abstract description 21
- 230000003647 oxidation Effects 0.000 title claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 20
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000011089 carbon dioxide Nutrition 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 10
- 238000005488 sandblasting Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 19
- 239000004744 fabric Substances 0.000 claims description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 13
- 238000002791 soaking Methods 0.000 claims description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 claims description 7
- 235000009847 Cucumis melo var cantalupensis Nutrition 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000003814 drug Substances 0.000 claims description 4
- 238000000861 blow drying Methods 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009461 vacuum packaging Methods 0.000 claims description 3
- 244000064895 Cucumis melo subsp melo Species 0.000 claims 1
- 238000011069 regeneration method Methods 0.000 abstract description 6
- 230000008929 regeneration Effects 0.000 abstract description 5
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 244000241257 Cucumis melo Species 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000007790 scraping Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005422 blasting Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- B08B1/143—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
Abstract
The invention discloses a method for cleaning pollutants on the surface of an anodic oxidation part in ETCH equipment, which comprises the steps of pretreating surface attachments in a dry ice sand blasting mode in the process of cleaning the anodic oxidation part, and then completing the cleaning of the pollutants on the surface by matching with a weak alkaline reagent wiping mode and a physical polishing mode, thereby improving the cleaning and regeneration efficiency of the anodic oxidation part, simultaneously reducing the excessive loss problem in the traditional cleaning mode, and prolonging the service times and the service life of the anodic oxidation part.
Description
Technical Field
The invention relates to a method for cleaning pollutants on the surface of an anodic oxidation part in ETCH equipment.
Background
Semiconductor integrated circuit manufacturing process technology continues to develop rapidly, new technology is emerging continuously to drive chip integration degree to improve rapidly, 28um, 14um, 7um chip manufacturing technology is becoming more mature in domestic market, and 5um chip technology is also in continuous testing. Among them, plasma etching and plasma cleaning have become one of the most critical processes in the semiconductor process. With the entering of high-process equipment, the plasma power of an etching cavity is increased, the problem of particle pollution caused by the damage of the plasma to the wall of the etching process cavity is also increased, particularly, in the rear-section manufacturing of a chip, a large number of pure anodic oxidation components are used to maintain the atmosphere in the cavity, meanwhile, a large number of deposits can be attached to the surface of the anodic oxidation components, and the cleaning capability of the cavity per se is far from meeting the surface cleanliness after long-time use.
Chinese patent: a regeneration method of a quartz shielding ring of a semiconductor 8-inch wafer process ETCH8500 process is disclosed in application number CN201810307016.5, after the quartz shielding ring is soaked, a scraping piece is adopted to primarily scrape attachments attached to the surface of the quartz shielding ring, the scraping piece is a steel wire brush or a scraper, the scraping piece runs along the periphery of the quartz shielding ring, and the scraping of stains on the outer surface of the quartz shielding ring is completed; the scraping piece runs along the inner periphery of the quartz shielding ring to scrape stains on the inner surface of the quartz shielding ring, the process can finally achieve the aims of removing film quality and cleaning surface pollutants, the effect can be seen only by polishing two to three times without stopping reworking, the excessive physical polishing not only prolongs the cleaning and regeneration time, but also can cause the excessive loss of a coating on the surface of a component, and the service life and the cleaning frequency of the component are reduced.
Chinese patent: a regeneration preparation process of an aluminum anodized part of an etching machine table is disclosed in application number CN201811103116.2, wherein in the step 8, high-pressure water is used for washing, then ultrasonic washing is carried out, and finally compressed air is used for blowing and drying in an oven.
Disclosure of Invention
The present invention is directed to a method for cleaning contaminants on the surface of an anodic oxidation component in an ETCH device, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a method for cleaning the surface pollutant of an anodic oxidation part in ETCH equipment comprises the following steps,
the method comprises the following steps that firstly, an air gun is used for drying the surface of a part, the water vapor content is reduced, and a part of pollutants with lower binding force is removed;
secondly, the part processed in the first step is subjected to dry ice sand blasting to remove a large amount of attached pollutants in each area of the surface;
step three, standing the part treated in the step two, after the normal temperature is recovered, placing the part in acetone for soaking for 30min, taking out and drying, and soaking the part in hot water;
step four, drying the parts treated in the step three, and wiping the whole parts twice by using a piece of dust-free cloth dipped with ammonia water and hydrogen peroxide;
step five, taking the parts processed in the step four, polishing the parts by using 7447# muskmelon cloth until the colors of the surfaces of the parts are uniform, wiping the surfaces of the parts by using dust-free cloth to dip acetone after the parts are swept by air gun water until no marks of the dust-free cloth exist, and obtaining qualified products;
and sixthly, after ultrasonic oscillation cleaning, blow-drying, heating and drying, and vacuum packaging.
Further, in step one, the air gun pressure is controlled to be about 40 Psi.
Further, in the second step, the dry ice blasting pressure is controlled at 4Kg/cm2, and the ice discharging amount is controlled at 0.6-0.8 Kg/min.
Further, in the third step, the soaking temperature in hot water is 70-80 ℃.
Further, in the fourth step, the volume ratio of the ammonia water hydrogen peroxide liquid medicine is NH3H 2O: H2O 2: H2O =1:3:4, ammonia water with electronic grade purity of 30%, and hydrogen peroxide with electronic grade purity of 30%.
Further, in the sixth step, the ultrasonic oscillation power density is controlled to be 8-12W/in 2, and the water resistance value needs to be larger than 4M omega.
Compared with the prior art, the invention has the beneficial effects that: the invention relates to a novel method for cleaning and regenerating an anodic oxidation part, which takes a dry ice sand blasting technology as a pretreatment mode, removes pollutants again through a hot water soaking treatment and a weak alkaline reagent wiping mode, and finally polishes the residual pollutant imprints through muskmelon cloth, thereby reducing the polishing time and frequency of the muskmelon cloth, reducing the loss of an anodic oxidation layer, cleaning parts which cannot be cleaned in the traditional mode, increasing the quality of product cleaning and regeneration and having obvious cleaning effect. The invention is suitable for the surface cleaning and regeneration treatment of the anode oxidation part in all ETCH equipment, and improves the cleanliness of the high-quality chip using equipment.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A method for cleaning and regenerating pollutants on the surface of a pure anode oxidation part in ETCH equipment comprises the following specific steps:
the method comprises the following steps that firstly, an air gun is used for drying the surface of a part, the water vapor content is reduced, and a part of pollutants with lower binding force is removed;
secondly, the part processed in the first step is subjected to dry ice sand blasting to remove a large amount of attached pollutants in each area of the surface;
step three, standing the part treated in the step two, after the normal temperature is recovered, placing the part in acetone for soaking for 30min, taking out and drying, and soaking the part in hot water;
step four, drying the parts treated in the step three, and wiping the whole parts twice by using a piece of dust-free cloth dipped with ammonia water and hydrogen peroxide;
step five, taking the parts processed in the step four, polishing the parts by using 7447# muskmelon cloth until the colors of the surfaces of the parts are uniform, wiping the surfaces of the parts by using acetone through air gun water sweeping, and marking the surfaces of the parts by using dust-free cloth until the marks of the dust-free cloth are formed, namely the products are qualified;
and sixthly, after ultrasonic oscillation cleaning, blow-drying, heating and drying, and vacuum packaging.
Further, in step one, the air gun pressure is controlled to be about 40 Psi.
Further, in the second step, the dry ice blasting pressure is controlled at 4Kg/cm2, and the ice discharging amount is controlled at 0.6-0.8 Kg/min.
Further, in the third step, the soaking temperature in hot water is 70-80 ℃.
Further, in the fourth step, the volume ratio of the ammonia water hydrogen peroxide liquid medicine is NH3H 2O: H2O 2: H2O =1:3:4, ammonia water with electronic grade purity of 30%, and hydrogen peroxide with electronic grade purity of 30%.
Further, in the sixth step, the ultrasonic oscillation power density is controlled to be 8-12W/in 2, and the water resistance value needs to be larger than 4M omega.
The anodic oxidation part is cleaned by combining the first step, the second step, the third step, the fourth step and the fifth step, so that the problem of chemical liquid soaking corrosion of the traditional cleaning mode is effectively solved, and meanwhile, the loss of the anodic oxidation layer caused by repeated polishing is reduced, so that the cleaning success rate and the quality are improved, and the method is suitable for large-scale popularization and application in the field of precision equipment maintenance.
Use dry ice sandblast preliminary treatment part for can clean the region that can not handle under the traditional manual mode of polishing because the coverability of gas spraying sweeping, and high pressure exceeds ice volume and is got rid of to the attachment in the pit and has effectual help, and the sandblast effect of dry ice is compared in other sandblast materials and can not increase the loss of anodic oxidation coating moreover.
The hot water soaking treatment can loosen the surface adhesion pollutant effectively, show the attachment, make follow-up getting rid of membranous substance step have obvious help, alkalescent reagent aqueous ammonia hydrogen peroxide cleans and compare and soak with the alkaline liquid medicine of traditional cleaning mode, can the effectual corruption that reduces the coating, and the clean pollutant effect of cooperation hot water soaking is better, in the melon cloth step of polishing, because the pollutant is shown, accomplish audio-visual getting rid of whole colored seal of a government organization in old china, the pollutant, colour difference scheduling problem, avoid doing over again and polish the processing phenomenon.
The method for wiping the dust-free cloth by dipping acetone is another visual inspection except the visual inspection, can directly remove a small amount of residual organic attachments, and is convenient to confirm the surface cleanliness of the parts.
The ultrasonic oscillation is the necessary operation of removing surface microparticle Particle, and the ultrasonic power density and the ultrasonic water resistance value are strictly controlled, reduce the injury to the part coating, improve the final abluent environment, and the maximize promotes the cleaning performance, reaches high-quality high efficiency anodic oxidation part at last and washs regenerated effect.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A method for cleaning pollutants on the surface of an anodic oxidation part in ETCH equipment is characterized by comprising the following steps: the steps are as follows,
the method comprises the following steps that firstly, an air gun is used for drying the surface of a part, the water vapor content is reduced, and a part of pollutants with lower binding force is removed;
secondly, the part processed in the first step is subjected to dry ice sand blasting to remove a large amount of attached pollutants in each area of the surface;
step three, standing the part treated in the step two, after the normal temperature is recovered, placing the part in acetone for soaking for 30min, taking out and drying, and soaking the part in hot water;
step four, drying the parts treated in the step three, and wiping the whole parts twice by using a piece of dust-free cloth dipped with ammonia water and hydrogen peroxide;
step five, taking the parts processed in the step four, polishing the parts by using 7447# muskmelon cloth until the colors of the surfaces of the parts are uniform, wiping the surfaces of the parts by using dust-free cloth to dip acetone after the parts are swept by air gun water until no marks of the dust-free cloth exist, and obtaining qualified products;
and sixthly, after ultrasonic oscillation cleaning, blow-drying, heating and drying, and vacuum packaging.
2. The method according to claim 1, wherein the method comprises: in the first step, the air gun pressure is controlled to be 40 Psi.
3. The method according to claim 1, wherein the method comprises: in the second step, the dry ice sand blasting pressure is controlled to be 4Kg/cm2, and the ice discharging amount is controlled to be 0.6 to 0.8 Kg/min.
4. The method according to claim 1, wherein the method comprises: in the third step, the hot water soaking temperature is 70-80 ℃.
5. The method according to claim 1, wherein the method comprises: in the fourth step, the volume ratio of the ammonia water and hydrogen peroxide liquid medicine is NH3H 2O: H2O 2: H2O =1:3:4, ammonia water with electronic grade purity of 30%, and hydrogen peroxide with electronic grade purity of 30%.
6. The method according to claim 1, wherein the method comprises: in the sixth step, the ultrasonic oscillation power density is controlled to be 8-12W/in 2, and the water resistance value needs to be larger than 4M omega.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010343187.0A CN111804674A (en) | 2020-04-27 | 2020-04-27 | Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010343187.0A CN111804674A (en) | 2020-04-27 | 2020-04-27 | Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111804674A true CN111804674A (en) | 2020-10-23 |
Family
ID=72848095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010343187.0A Pending CN111804674A (en) | 2020-04-27 | 2020-04-27 | Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111804674A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113289959A (en) * | 2021-05-12 | 2021-08-24 | 上海富乐德智能科技发展有限公司 | Method for cleaning ceramic surface of electrostatic chuck part of semiconductor ETCH (electronic toll Collection) equipment |
CN113714178A (en) * | 2021-08-06 | 2021-11-30 | 富乐德科技发展(大连)有限公司 | Ultra-clean cleaning process for anodic aluminum oxide and ceramic spraying material electrostatic chuck in cavity of semiconductor equipment |
CN114535186A (en) * | 2022-01-12 | 2022-05-27 | 合肥微睿光电科技有限公司 | Method for regenerating a component in a cavity of a PECVD or DRY ETCH apparatus |
CN115254766A (en) * | 2022-06-16 | 2022-11-01 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of aluminum oxide ceramic ejector of semiconductor equipment |
CN115256244A (en) * | 2022-08-12 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Physical cleaning method for electrolytic nickel plate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1850360A (en) * | 2005-12-02 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Washing method for removing polymer film adhered on surface of anode alumimium-oxide part |
CN101204701A (en) * | 2006-12-21 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Anode oxidize spare parts surface cleaning method |
CN101214485A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning anodic oxidation part surface in polysilicon etching cavity |
US20090056745A1 (en) * | 2007-08-27 | 2009-03-05 | Applied Materials, Inc. | Wet clean process for recovery of anodized chamber parts |
CN103911643A (en) * | 2012-12-05 | 2014-07-09 | 朗姆研究公司 | Method Of Wet Cleaning Aluminum Chamber Parts |
-
2020
- 2020-04-27 CN CN202010343187.0A patent/CN111804674A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1850360A (en) * | 2005-12-02 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Washing method for removing polymer film adhered on surface of anode alumimium-oxide part |
CN101204701A (en) * | 2006-12-21 | 2008-06-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Anode oxidize spare parts surface cleaning method |
CN101214485A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning anodic oxidation part surface in polysilicon etching cavity |
US20090056745A1 (en) * | 2007-08-27 | 2009-03-05 | Applied Materials, Inc. | Wet clean process for recovery of anodized chamber parts |
CN101380636A (en) * | 2007-08-27 | 2009-03-11 | 应用材料公司 | Wet clean process for recovery of anodized chamber parts |
CN103911643A (en) * | 2012-12-05 | 2014-07-09 | 朗姆研究公司 | Method Of Wet Cleaning Aluminum Chamber Parts |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113289959A (en) * | 2021-05-12 | 2021-08-24 | 上海富乐德智能科技发展有限公司 | Method for cleaning ceramic surface of electrostatic chuck part of semiconductor ETCH (electronic toll Collection) equipment |
CN113714178A (en) * | 2021-08-06 | 2021-11-30 | 富乐德科技发展(大连)有限公司 | Ultra-clean cleaning process for anodic aluminum oxide and ceramic spraying material electrostatic chuck in cavity of semiconductor equipment |
CN114535186A (en) * | 2022-01-12 | 2022-05-27 | 合肥微睿光电科技有限公司 | Method for regenerating a component in a cavity of a PECVD or DRY ETCH apparatus |
CN115254766A (en) * | 2022-06-16 | 2022-11-01 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of aluminum oxide ceramic ejector of semiconductor equipment |
CN115254766B (en) * | 2022-06-16 | 2024-01-19 | 上海富乐德智能科技发展有限公司 | Cleaning and regenerating method for alumina ceramic injector of semiconductor equipment |
CN115256244A (en) * | 2022-08-12 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Physical cleaning method for electrolytic nickel plate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111804674A (en) | Method for cleaning pollutants on surface of anode oxidation part in ETCH (electronic toll Collection) equipment | |
CN101219429A (en) | Method for cleaning quartz parts surface in polycrystal etching cavity | |
CN110449398B (en) | Mask precision regeneration process and system thereof | |
CN111534825B (en) | Process for removing titanium and titanium nitride deposited film of stainless steel part of semiconductor equipment | |
WO2022222787A1 (en) | Ceramic piece cleaning method | |
CN111659640A (en) | Ultra-clean cleaning process for aluminum substrate porous gas distribution device in cavity of semiconductor equipment | |
CN112563111A (en) | Cleaning method for removing metal oxide deposited on ceramic surface | |
CN114211405A (en) | Cleaning method for removing fluoride on surface of aluminum substrate | |
CN109092792A (en) | A kind of ceramic substrate surface processing method | |
CN110416064B (en) | Method for removing oil stains on silicon wafer | |
CN110976414A (en) | Ultra-high clean cleaning process for semiconductor aluminum alloy parts | |
CN111962047A (en) | Method for improving graphite boat treatment effect | |
CN111900070A (en) | Regeneration cleaning and repairing method for silicon part of semiconductor high-order process etching device | |
TW201437438A (en) | Method of wet cleaning aluminum chamber parts | |
JP2003126795A (en) | Method for cleaning ceramic insulator | |
CN102087954A (en) | Wafer cleaning method | |
CN112620230A (en) | Method for cleaning parts | |
CN112354976A (en) | Cleaning method for removing deposited pollutants on surface of anodized aluminum | |
CN108630522A (en) | The cleaning method of chip surface | |
CN113714178B (en) | Ultra-clean cleaning process for anodic aluminum oxide and ceramic spraying material electrostatic chuck in cavity of semiconductor equipment | |
CN114496710A (en) | Method for cleaning yttrium oxide coating of ceramic window of semiconductor equipment | |
CN108097642A (en) | A kind of Paint removing process of high-speed EMU wheel pair | |
CN111151489A (en) | Method for cleaning silicon wafer in spraying mode through ozone | |
CN112427408A (en) | Efficient UV adhesive removing method | |
CN112605039A (en) | Cleaning method for removing metal conductive film on surface of molybdenum material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20201023 |