CN111659640A - Ultra-clean cleaning process for aluminum substrate porous gas distribution device in cavity of semiconductor equipment - Google Patents
Ultra-clean cleaning process for aluminum substrate porous gas distribution device in cavity of semiconductor equipment Download PDFInfo
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- CN111659640A CN111659640A CN202010407256.XA CN202010407256A CN111659640A CN 111659640 A CN111659640 A CN 111659640A CN 202010407256 A CN202010407256 A CN 202010407256A CN 111659640 A CN111659640 A CN 111659640A
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- aluminum substrate
- acid solution
- pressure water
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 69
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000004140 cleaning Methods 0.000 title claims abstract description 56
- 238000009826 distribution Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002253 acid Substances 0.000 claims abstract description 33
- 238000005406 washing Methods 0.000 claims abstract description 29
- 238000005498 polishing Methods 0.000 claims abstract description 21
- 238000001035 drying Methods 0.000 claims abstract description 18
- 238000002791 soaking Methods 0.000 claims abstract description 17
- 238000011282 treatment Methods 0.000 claims abstract description 14
- 239000012498 ultrapure water Substances 0.000 claims abstract description 8
- 239000012528 membrane Substances 0.000 claims abstract description 3
- 238000005488 sandblasting Methods 0.000 claims description 13
- 238000009210 therapy by ultrasound Methods 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 7
- 238000009991 scouring Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002390 adhesive tape Substances 0.000 claims description 4
- 238000000861 blow drying Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 239000003344 environmental pollutant Substances 0.000 abstract description 3
- 231100000719 pollutant Toxicity 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 239000004576 sand Substances 0.000 description 5
- 238000005554 pickling Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 244000137852 Petrea volubilis Species 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses an ultra-clean cleaning process for an aluminum substrate porous gas distribution device in a cavity of semiconductor equipment, belonging to the technical field of cleaning of semiconductor equipment parts; the method comprises the steps of carrying out primary polishing treatment on a part of a device to be cleaned by using a disc type abrasive paper pneumatic polishing machine; placing the device part in a mixed acid solution for membrane removal treatment; rinsing the device parts by using high-purity water; high-pressure water jet cleaning is carried out on the device parts by adopting a high-pressure water jet cleaning machine; placing the device part in the center of a rotary polishing table, fixing and performing fine polishing; soaking the device part in an acid solution a for a period of time, and then washing the device part with pure water; putting the device part into the acid solution b again, soaking for a period of time, and then washing with pure water; high-pressure water washing is carried out on the device parts again by adopting a high-pressure water jet cleaning machine; cleaning by adopting ultrasonic waves; and drying the device parts by adopting compressed air. The process can control the aperture change within 2 μm, and remove deposited film pollutants and various corrosion marks.
Description
Technical Field
The invention relates to the technical field of cleaning of semiconductor equipment parts, in particular to a cleaning process of an aluminum substrate porous gas distribution device.
Background
The semiconductor process involves various gases, plasmas, corrosive chemicals and the like, which can deposit and form a pollution film on the surface of a component due to reaction, and the existence of pollutants has certain influence on the parameter performance and the like of the component, thereby possibly causing the damage of the component, the reduction of the yield and the like. Therefore, the parts are cleaned and regenerated regularly to meet the requirements of process parameters, performance and the like, and the method has important significance for the stability of chip process technology, production cost and the like. However, for the porous gas distribution device in the cavity of the semiconductor device, excessive cleaning may result in too fast increase of the pore diameter and shortened service life, so a new process is urgently needed to solve the problem.
Disclosure of Invention
In order to solve the problems, the application provides an ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment, the process can control the pore diameter change within 2 mu m, deposited film pollutants and various corrosion marks are removed, and meanwhile, the cleaned porous gas distribution device of the aluminum substrate meets the requirements of various engineering parameters.
In order to achieve the purpose, the technical scheme of the application is as follows: the ultra-clean cleaning process of the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment comprises the following specific steps:
the method comprises the following steps: carrying out primary polishing treatment on a part of a device to be cleaned by using a disc type abrasive paper pneumatic polishing machine; the purpose is to remove surface scratches, corrosion marks and the like;
step two: placing the polished device part in HF (hydrogen fluoride) HNO (hydrogen fluoride)3Carrying out membrane removal treatment in mixed acid solution with the volume ratio of 1:9 for 30-40 s; the mixed acid solution is corrosive to the aluminum substrate, the part of the device to be cleaned is of a porous structure, the pore diameter is easy to expand due to too long pickling time, and the pore structure is not sufficiently cleaned due to too short pickling time, so that the strict control of the pickling time is very critical; preferably, the device parts are pulled out of the mixed acid solution once every 10 seconds and then immersed in the mixed acid solution, and the operation is repeated for 3-4 times.
Step three: rinsing the pickled device parts by using high-purity water; the purpose is to dilute and remove the surface residual acid;
step four: adopting a high-pressure water jet cleaning machine to adjust the pressure as follows: washing the device parts under 20-25Mpa for 1.5-2.5 min; aims to remove residual films and impurities adhered on the surface after acid treatment and avoid blocking the porous structure;
step five: placing the device part in the center of a rotary polishing table and fixing, and performing fine polishing by using brown and white scouring pads; the scratch is removed, so that the surface grains and the color are uniform;
step six: placing the device parts in HF: H2Soaking in an acid solution with the volume ratio of O being 1:25 for 10-15 s; the purpose is to neutralize other metal ions present on the surface of the device components; then flushing with high-purity water;
step seven: placing the device part in HNO3:H2Soaking in acid solution with the volume ratio of O being 1:4 for 55-75 s; aims to passivate the surface of an aluminum substrate, improve the corrosion resistance and simultaneously improve the appearance color of a product; then flushing with high-purity water;
step eight: adopting a high-pressure water jet cleaning machine to adjust the pressure as follows: washing the device parts under high pressure at 20-25MPa for 1.5-2.5 min; aims to remove residual films and impurities adhered on the surface after acid treatment and avoid blocking the porous structure;
step nine: cleaning with ultrasonic wave with intensity of 8 + -2W/inch2Ultrasonic treatment for 4-6 min; the purpose is to remove surface micro particles;
step ten: drying the device parts by using compressed air; the purpose is to prevent the surface from remaining water stain and affecting the appearance;
for parts of the device needing sand blasting, the method further comprises the following steps of eleven:
step eleven: protecting the non-working area by using an adhesive tape, and then carrying out fine sand blasting treatment on the working surface of the device part by using an automatic sand blasting machine, wherein the sand material uses carborundum WA400#/220# (according to the specific roughness parameter requirement); the purpose is to coarsen the surface of the base material and improve the film attaching capability of the device in the process; blowing by using compressed air after the sand blasting is finished, and removing surface residual sand;
step twelve: adopting a high-pressure water jet cleaning machine to adjust the pressure as follows: washing the device parts under 10-15Mpa for 2.5-3 min; the aim is to remove sand particles which may be scattered at the holes after sand blasting;
the device component processed in step ten or step twelve, further comprising:
step thirteen: cleaning with ultrasonic wave in a clean room with ultrasonic intensity of 8 + -2W/inch2Ultrasonic treatment time is 9-11 min; the purpose is to remove surface micro particles;
fourteen steps: drying the device parts in a dust-free room by adopting compressed air; the purpose is to prevent the surface from remaining water stain and affecting the appearance;
step fifteen: and (3) carrying out heating and drying treatment on the device part in a dust-free chamber by using a vacuum oven, wherein the drying temperature is 145-165 ℃, and the drying time is 3.5-4.5 h.
Due to the adoption of the technical scheme, the invention can obtain the following technical effects:
1. according to the invention, a mode of combining multi-step acid leaching is adopted, so that the brightness of the color of the aluminum substrate body is improved, the surface activity of the aluminum substrate is passivated while the surface deposits are removed, and the corrosion resistance of the aluminum substrate is enhanced;
2. the invention adopts a mode of combining sand paper and polishing of various types of scouring pads, so that fine, uniform and color-difference-free grains can be ensured while surface scratch marks are removed, and the real cleaning and regeneration effect is achieved;
3. the surface of the base material is roughened by adopting a fine sand blasting mode, so that the adhesion of the device to a deposited film in the process is improved, and the stability of parameter setting of the process is facilitated;
4. the invention adopts a multi-step high-pressure washing mode, can ensure the permeability of the porous structure while effectively removing deposited impurities, and avoids blockage;
5. the method accurately controls the time of the key pickling step, and regularly lifts the device part, so that residual films in the holes can be fully cleaned, the reaming amount can be ensured to be within 2 mu m, and the life cycle of the porous aluminum substrate part is greatly prolonged.
Detailed Description
The present invention will be described in further detail with reference to specific examples below: the present application is further described by taking this as an example.
Example 1
The embodiment provides an ultra-clean cleaning process for a porous air distribution device of an aluminum substrate in a cavity of semiconductor equipment, which comprises the following specific steps:
step 1, carrying out primary grinding on a porous air distribution device of an aluminum substrate by using a disc type abrasive paper pneumatic grinding machine to remove scratches and imprints;
step 2, preparing HF HNO3Putting an aluminum substrate porous gas distribution device into the mixed acid solution for soaking for 30s, and carrying out lifting operation every 10s, wherein the volume ratio of the aluminum substrate porous gas distribution device to the mixed acid solution is 1: 9;
step 3, rinsing the porous gas distribution device of the aluminum substrate by using high-purity water;
step 4, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water under 25Mpa for 1.5 min;
step 5, placing the porous air distribution device of the aluminum substrate in the center of a rotary polishing table, fixing, and finely polishing by using brown and white scouring pads;
step 6, placing the aluminum substrate porous gas separation device in HF: H2Soaking in an acid solution a with the volume ratio of O to O being 1:25 for 10s at normal temperature; washing with pure water;
step 7, placing the aluminum substrate porous gas separation device in HNO3:H2Soaking in an acid solution b with the volume ratio of O to 1:4 for 75s at normal temperature; washing with water;
step 8, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water under 25Mpa for 1.5 min;
step 9, cleaning the porous gas distribution device of the aluminum substrate by adopting ultrasonic waves with the ultrasonic intensity of 8 +/-2W/inch2Ultrasonic treatment time is 4 min;
step 10, using compressed air to blow-dry the porous air distribution device of the aluminum substrate;
step 11, winding and protecting a non-working area by using a yellow adhesive tape, and then performing fine sand blasting treatment on the working surface of the porous air distribution device of the aluminum substrate by using WA400# carborundum; blowing by using compressed air after the sand blasting is finished, and removing surface residual sand;
step 12, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water under 15Mpa for 2.5 min;
step 13, cleaning in a dust-free room by adopting ultrasonic waves with the ultrasonic intensity of 8 +/-2W/inch2Ultrasonic treatment time is 9 min;
step 14, drying the porous air distribution device of the aluminum substrate by using compressed air in a dust-free room;
and step 15, heating and drying the aluminum product in a dust-free room by using a vacuum oven to 165 ℃ for 3.5 hours.
Example 2
The embodiment provides an ultra-clean cleaning process for a porous air distribution device of an aluminum substrate in a cavity of semiconductor equipment, which comprises the following specific steps:
step 1, carrying out primary grinding on a porous air distribution device of an aluminum substrate by using a disc type abrasive paper pneumatic grinding machine to remove scratches and imprints;
step 2, preparing HF HNO3Putting an aluminum substrate porous gas distribution device into the mixed acid solution for soaking for 40s, and carrying out lifting operation every 10s, wherein the volume ratio of the aluminum substrate porous gas distribution device to the mixed acid solution is 1: 9;
step 3, rinsing the porous gas distribution device of the aluminum substrate by using high-purity water;
step 4, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water under 23Mpa for 2 min;
step 5, placing the porous air distribution device of the aluminum substrate in the center of a rotary polishing table, fixing, and finely polishing by using brown and white scouring pads;
step 6, arranging a porous gas distribution device on the aluminum substrateIn HF: H2Soaking in an acid solution a with the volume ratio of O to O being 1:25 for 12s at normal temperature; washing with pure water;
step 7, placing the aluminum substrate porous gas separation device in HNO3:H2Soaking in an acid solution b with the volume ratio of O to 1:4 for 65s at normal temperature; washing with water;
step 8, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water under 23Mpa for 2 min;
step 9, cleaning the porous gas distribution device of the aluminum substrate by adopting ultrasonic waves with the ultrasonic intensity of 8 +/-2W/inch2Ultrasonic treatment for 5 min;
step 10, using compressed air to blow-dry the porous air distribution device of the aluminum substrate;
step 11, cleaning in a dust-free room by using ultrasonic waves with the ultrasonic intensity of 8 +/-2W/inch2Ultrasonic treatment time is 10 min;
step 12, using compressed air to blow the porous air distribution device of the aluminum substrate in a dust-free room;
and step 13, heating and drying the aluminum product in a dust-free room by using a vacuum oven to 145 ℃, and drying for 4.5 hours.
Example 3
The embodiment provides an ultra-clean cleaning process for a porous air distribution device of an aluminum substrate in a cavity of semiconductor equipment, which comprises the following specific steps:
step 1, carrying out primary grinding on a porous air distribution device of an aluminum substrate by using a disc type abrasive paper pneumatic grinding machine to remove scratches and imprints;
step 2, preparing HF HNO3Putting an aluminum substrate porous gas distribution device into the mixed acid solution for soaking for 40s, and carrying out lifting operation every 10s, wherein the volume ratio of the aluminum substrate porous gas distribution device to the mixed acid solution is 1: 9;
step 3, rinsing the porous gas distribution device of the aluminum substrate by using high-purity water;
step 4, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water at 20Mpa for 2.5 min;
step 5, placing the porous air distribution device of the aluminum substrate in the center of a rotary polishing table, fixing, and finely polishing by using brown and white scouring pads;
step 6, placing the aluminum substrate porous gas separation device in HF: H2Soaking in an acid solution a with the volume ratio of O to O being 1:25 for 15s at normal temperature; washing with pure water;
step 7, placing the aluminum substrate porous gas separation device in HNO3:H2Soaking in an acid solution b with the volume ratio of O to 1:4 for 55s at normal temperature; washing with water;
step 8, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water at 20Mpa for 2.5 min;
step 9, cleaning the porous gas distribution device of the aluminum substrate by adopting ultrasonic waves with the ultrasonic intensity of 8 +/-2W/inch2Ultrasonic treatment time is 6 min;
step 10, using compressed air to blow-dry the porous air distribution device of the aluminum substrate;
step 11, winding and protecting a non-working area by using a yellow adhesive tape, and then performing fine sand blasting treatment on the working surface of the porous air distribution device of the aluminum substrate by using WA400# carborundum; blowing by using compressed air after the sand blasting is finished, and removing surface residual sand;
step 12, adopting a high-pressure water jet cleaning machine, and adjusting the pressure as follows: washing the porous gas distribution device of the aluminum substrate with high pressure water at 10Mpa for 3 min;
step 13, cleaning in a dust-free room by adopting ultrasonic waves with the ultrasonic intensity of 8 +/-2W/inch2Ultrasonic treatment time is 11 min;
step 14, drying the porous air distribution device of the aluminum substrate by using compressed air in a dust-free room;
and step 15, heating and drying the aluminum product in a dust-free room by using a vacuum oven to 155 ℃ for 4 hours.
The above description is only for the purpose of creating a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the technical scope of the present invention.
Claims (10)
1. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment is characterized by comprising the following specific steps of:
the method comprises the following steps: carrying out primary polishing treatment on a part of a device to be cleaned by using a disc type abrasive paper pneumatic polishing machine;
step two: after primary polishing treatment, placing the device part in a mixed acid solution for membrane removal treatment, wherein the soaking time is 30-40 s;
step three: rinsing the immersed device parts by using high-purity water;
step four: after rinsing, a high-pressure water jet cleaning machine is adopted to carry out high-pressure water washing on the device components;
step five: after washing, placing the device part in the center of a rotary polishing table, fixing and finely polishing;
step six: after polishing, the device part is placed into an acid solution a for soaking for a period of time and then is washed by pure water;
step seven: after washing, the device parts are put into the acid solution b again to be soaked for a period of time and then washed by pure water;
step eight: after washing, high-pressure water jet cleaning is carried out on the device parts again by using a high-pressure water jet cleaning machine;
step nine: washing with ultrasonic wave after water washing;
step ten: and after cleaning, drying the device parts by adopting compressed air.
2. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1, further comprising the steps eleven and twelve:
step eleven: protecting the non-working area by using an adhesive tape after blow-drying treatment, and then carrying out fine sand blasting treatment on the working surface of the device part by using an automatic sand blasting machine;
step twelve: after sand blasting, high-pressure water jet cleaning is carried out on the device parts by a high-pressure water jet cleaning machine;
the device component processed in step ten or step twelve, further comprising:
step thirteen: cleaning in a dust-free room by adopting ultrasonic waves;
fourteen steps: after cleaning, drying the device parts by adopting compressed air in a dust-free chamber;
step fifteen: and after the drying treatment, heating and drying the device parts in a dust-free room by using a vacuum oven.
3. The ultra-clean cleaning process for the porous aluminum substrate gas distribution device in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein in the second step, the device part is pulled out of the mixed acid solution once every 10 seconds and then is immersed in the mixed acid solution, and the operation is repeated for 3-4 times.
4. The ultra-clean cleaning process for the porous gas distribution device of aluminum substrate in the cavity of semiconductor equipment as claimed in claim 1 or 2, wherein the mixed acid solution in the second step is HF: HNO31:9 by volume.
5. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein the pressure of the high-pressure water jet cleaning machine in the fourth step and the eighth step is adjusted to 20-25Mpa, and the high-pressure water washing time is set to 1.5-2.5 min.
6. The ultra-clean cleaning process for the porous gas separation device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein in the fifth step, brown and white scouring pads are used for fine grinding.
7. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein the acid solution a is HF H2The volume ratio of O is 1:25, and the acid solution b is HNO3:H2With a volume ratio of O of 1:4A solution; the soaking time in the acid solution a is 10-15s, and the soaking time in the acid solution b is 55-75 s.
8. The ultra-clean cleaning process for the porous gas distribution device of aluminum substrate in the cavity of semiconductor equipment as claimed in claim 2, wherein the ultrasonic intensity in step nine is 8 ± 2W/inch2Ultrasonic treatment time is 4-6 min; in the thirteenth step, the ultrasonic intensity is 8 + -2W/inch2The ultrasonic treatment time is 9-11 min.
9. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 2, wherein in the step twelve, the pressure of the high-pressure water jet cleaning machine is adjusted to 10-15Mpa, and the high-pressure water washing time is set to 2.5-3 min.
10. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor device as claimed in claim 2, wherein the drying temperature of the vacuum oven in the fifteenth step is set to 145-165 ℃, and the drying time is set to 3.5-4.5 h.
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