CN101154558A - Method for cleaning etching equipment component - Google Patents
Method for cleaning etching equipment component Download PDFInfo
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- CN101154558A CN101154558A CNA2006101169050A CN200610116905A CN101154558A CN 101154558 A CN101154558 A CN 101154558A CN A2006101169050 A CNA2006101169050 A CN A2006101169050A CN 200610116905 A CN200610116905 A CN 200610116905A CN 101154558 A CN101154558 A CN 101154558A
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Abstract
The invention discloses a method for cleaning an etching equipment component, which includes the following steps that: the etching equipment component to be cleaned is immerged in the acetone solution; deionized water is used for cleaning the component; the component is put into an oven for baking. The method of the invention adopts the acetone solution with no damage to the component to clean the equipment component, which prolongs the service life of the equipment, and is also favorable to stabilized production, saving the preproduction restore step before formal production, and improving the utilization rate of the equipment.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of cleaning method of etching equipment component.
Background technology
Along with dwindling of device critical size, the control that wafer surface is stained becomes more and more crucial.If introduced pollutant sources such as particle in process of production, just may cause the open circuit of circuit or open circuit, thereby in semiconductor technology was made, how avoiding the pollution in the technology manufacturing was the problem that must pay close attention to.Along with the raising of automation degree of equipment in producing, tailing off alternately of personnel and product brings the emphasis of particle to be put into above the particle that production equipment produced more in preventing to produce.After the equipment long-term work, can accumulate some attachments on its inner each assembly, coming off of this attachment is exactly very common pollutant sources.For this reason, in process of production, need frequent each assembly to clean, remove the attachment on it, cause particle to be stained wafer to prevent that it from coming off to equipment.
With dry etching equipment is example, and dry etching is a process of removing unwanted material with the method for chemistry or physics selectively from wafer surface, and the material that normally utilizes low pressure plasma to discharge to realize this plane of crystal is removed.Because of its etching has anisotropy, can obtain the better sidewall section shape, now become the main method of etched features under the submicron-scale.But, in the dry etching process, because of plasma gas, wafer, etching gas etc. react to each other the accessory substance that produces can be attached on each assembly in the equipment, if it is not cleaned removal for a long time, will become the pollutant sources in the technical process, cause the particle of wafer to stain, reduce the rate of finished products of producing.Fig. 1 causes the abnormal device profile map of etching result for staining because of particle in the explanation prior art, as shown in Figure 1, when the film on the substrate 101 102 is carried out etching, does not have a defective if wafer surface is smooth, the neat in edge of etching perforate 103, and figure is complete; But if wafer surface exists particle to stain 104, then can cause the edge deformation of etching perforate 105 serious, and the distortion of corrosion figure shape at the moment can cause device performance to descend, rate of finished products reduces.
At present, the method that etching equipment component is cleaned mainly contains two kinds, and a kind of is the polymer that utilizes blasting treatment to remove to adhere in the equipment, but this method need be used special-purpose sand-blasting machine, and cost is higher; Another kind is to utilize the HF acid solution that each assembly is soaked and clean, and this solution can be realized the comparatively thoroughly cleaning to assembly.But this HF acid solution has stronger acid corrosion, easily apparatus assembly is caused certain damage, reduces the useful life of equipment, also can influence the stability of technology simultaneously.As, utilize this HF acid solution that the aluminum assembly is soaked, aluminum oxide coating layer on the assembly can be destroyed, when the result causes assembly to reinstall back equipment again after cleaning, before the environment of device interior is different from cleaning, cause the technology instability, need carry out large quantities of pre-production operations in advance, after recovered component states, technology is stable once more, just can return to normal production, make usage ratio of equipment reduce.
Application number is the cleaning method that 01820298.5 Chinese patent discloses a kind of etching equipment component, this method utilizes a kind of acidic cleaning solution that apparatus assembly is cleaned, this cleaning fluid is made up of acid buffer agent, organic solvent and fluoride, and requires the pH value of this cleaning fluid preparation to remain between 3 to 6.This method can alleviate the corrosion damage to the equipment metal assembly, but because of its used cleaning fluid still has corrosivity, assembly there is to a certain degree damage, still can cause service life of equipment to descend on the one hand, also can influence the original environment in the equipment on the other hand because of the change of assembly surface state, cause the technology instability.In addition, the preparation of this cleaning fluid need be carried out the test of pH value, and operation is comparatively complicated, implements not very convenient.
Summary of the invention
The invention provides a kind of cleaning method of etching equipment component, this method adopts not have the cleaning fluid of damage that apparatus assembly is cleaned to assembly, has both prevented the interior attachment of equipment to the staining of wafer, and can not cause damage to apparatus assembly because of cleaning again.
The cleaning method of a kind of etching equipment component provided by the invention comprises step:
Etching equipment component to be cleaned is immersed in the acetone soln;
With the described assembly of deionized water rinsing;
Described assembly is put into baking oven to be toasted.
Wherein, the time of described immersion acetone is between 10 to 60 minutes.
Wherein, described temperature of oven is between 50 to 100 ℃, and described stoving time is between 10 to 60 minutes; Can also feed inert gas in the described baking oven.
Wherein, before the described assembly of flushing, earlier described assembly is put into deionized water or gone into the processing that acetone soln carries out ultrasonic waves for cleaning; And the described ultrasonic waves for cleaning time is between 1 to 30 minute.
Wherein, described etching apparatus is a plasma degumming machine.
Wherein, described assembly is an aluminum.
Compared with prior art, the present invention has the following advantages:
The cleaning method of etching equipment component of the present invention at the characteristics of etching apparatus, adopts not damage of assembly, and has the acetone soln of removing photoresist and organic substance ability more by force, in conjunction with method for suppersonic cleaning, the assembly of etching apparatus is cleaned.Cleaning method of the present invention can prevent effectively not only in the equipment that the attachment particle to wafer that causes that comes off stains, and also because of its assembly to equipment does not have corrosion strength, can not damage assembly, and prolong the useful life of equipment.In addition, cleaning method of the present invention, little to the component states influence before and after cleaning, just remove the attachment on it, can not change the operational environment in the equipment, stable the carrying out that helps producing, can save the preceding pre-production recovering step of formal production, improve usage ratio of equipment.
The cleaning method of etching equipment component of the present invention, used cleaning fluid do not need to carry out special preparation, have characteristics easy and simple to handle.
Description of drawings
Fig. 1 causes the abnormal device profile map of etching result for staining because of particle in the explanation prior art;
Fig. 2 is the flow chart of etching equipment component cleaning method of the present invention;
Fig. 3 is the structural representation of plasma degumming machine.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Processing method of the present invention can be widely applied in many application, and should not be construed as the cleaning that only is only applicable to etching equipment component, and for the cleaning of the removal attachment of miscellaneous equipment assembly, method of the present invention can be suitable for too.By preferred embodiment processing method of the present invention is specified, the present invention is not limited to this specific embodiment certainly, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
Realize and the assembly in the etching apparatus can be cleaned up, do not damage this apparatus assembly again, at first certain understanding will be arranged the character of attachment in the etching apparatus.Common dry etch process all is to carry out after photoetching, utilizes the photoresist mask pattern that forms on wafer after the photoetching, carries out etching, realizes mask pattern duplicating on silicon chip.In the erosion process at this hour, mainly can produce accessory substance after some etchings, and form the attachment in the etching apparatus by two aspects: the one, the photoresist that mask is used reacts with etching gas, forms the polymer that some contain glue; The 2nd, material to be etched and etching gas reaction form some organic polymers.So, can release attachment in the etching apparatus mainly by containing xanthan polymer and organic polymer is formed.This base polymer, comes off when this polymer attachment is thicker attached on each assembly in the equipment, reative cell and wafer is caused stain.At these characteristics of dry etching equipment, mainly utilized acetone soln to photoresist and organic strong removal ability in the cleaning method of the present invention, and the non-corrosiveness of the assembly assembly to etching apparatus has been cleaned.
Fig. 2 describes in detail to the first embodiment of the present invention in conjunction with Fig. 2 for the flow chart of first embodiment of etching equipment component cleaning method of the present invention.
In the present embodiment, the assembly of article on plasma resist remover cleans, and this equipment is mainly used in the dry method of photoresist and removes, and the glue content in the attachment on the equipment inner assembly is higher.Fig. 3 is the structural representation of plasma degumming machine, as shown in Figure 3, this resist remover mainly comprises: reative cell 301, radio-frequency power supply 302, gas supply device 307, vacuum system 308, the upper and lower electrode 303 and 304 that links to each other with radio-frequency power supply 302, brace table 305, and gas ionization chamber 306 and gas diffuser screen 310.Wherein, be positioned at each assembly of the reative cell of etching; comprise that there is certain attachment accumulation in regular meeting on reaction chamber wall, gaseous diffusion net 310, brace table 305 even inner each hold-down screw; though it is compared with the equipment of deposit film; the coverage rate of this attachment in equipment is lower; but as if untimely it is cleaned, still can become the particle contamination source in the technology making.
The conventional clean method easily causes damage to apparatus assembly, is example with the gaseous diffusion net, and its material system is generally aluminum products, and one deck aluminum oxide film is arranged on the surface.If use traditional sour cleaning fluid that contains to clean, the attachment online because of this gaseous diffusion has regionality, surface coverage is not high, this acidic cleaning solution is inevitable with the contacting of long period of aluminum oxide film in cleaning process, and this Long contact time will inevitably be destroyed the aluminum oxide film of this assembly surface, make the assembly surface state change, the operational environment of device interior was preceding different with cleaning after this had also just caused cleaning, unsettled situation appears in the technology that the result carries out after cleaning again, show as the air-flow instability in the reative cell, etching result's uniformity is relatively poor, etch rate generation deviation etc.Have only and carry out a large amount of pre-production earlier, behind the waiting facilities recovering state, this equipment formally could be put into production use, reduced usage ratio of equipment.
For preventing that assembly surface is subjected to similar damage in the cleaning process, wishing to adopt does not have the cleaning fluid of corrosiveness that it is cleaned to assembly surface.In the present embodiment, utilize acetone to be cleaning fluid, kept cleaning the integrity of back assembly surface, guaranteed that above-mentioned situation can not take place.Cleaning with this gaseous diffusion net is an example below, and cleaning method of the present invention is elaborated.
At first, the assembly of desire cleaning being pulled down (S201), is gaseous diffusion net 310 in the present embodiment.Because this resist remover is used to remove photoresist, attachment in it has mainly comprised the product of some photoresists, can reach cleaning performance preferably so adopted in the present embodiment to remove photoresist and go the stronger acetone soln of organic substance ability that it is cleaned.Simultaneously, because of acetone soln does not have corrosiveness to aluminium oxide, can keep the aluminum oxide film of this gaseous diffusion net surface not change, the operational environment of equipment is preceding identical with cleaning after also just having guaranteed to clean, can not need to produce in advance processing, use and directly enter to produce.
Next step is exactly that this assembly of pulling down is immersed in the acetone soln (S202), and this step mainly is to utilize acetone soln to glue in the attachment and organic dissolution, steeps the attachment on the assembly soft, even comes off from assembly.For making cleaning more thorough, this step soaks to be needed to continue the regular hour, and the concrete time can by how many decisions of attachment, usually can be between 10 to 60 minutes, as be 15 minutes, 30 minutes or 45 minutes etc.In the present embodiment, the immersion of assembly in acetone soln at room temperature carried out, and need not heating; In other embodiments of the invention, also can add the processing of heat soaking to it, but volatile because of acetone, the temperature of heating cannot be too high, as can be between 20 to 50 ℃.
If after soaking, the attachment on the assembly has come off totally, then can directly carry out the rinsing step of back, otherwise, also need add a step ultrasonic Treatment step.
Assembly after soaking puts it in the ultrasonic wave cleaning equipment after taking out in by acetone soln, and it is carried out ultrasonic waves for cleaning (S203).In the processing of this step, can in ultrasonic equipment, charge into deionized water, assembly is put into deionized water carry out the ultrasonic waves for cleaning processing, also can still utilize acetone soln to carry out ultrasonic Treatment, but had better not use the acetone soln of back again, but be replaced by clean acetone soln, to reach better cleaning performance.In the present embodiment, selected for use and utilized deionized water to carry out the method for ultrasonic Treatment.This step ultrasonic Treatment can be utilized hyperacoustic strong cleaning capacity, will steep softly in the last soaking step, but also fail the attachment that comes off remove clean, to reach the purpose of thorough cleaning assemblies.
Ultrasonic wave cleaning principle is the high-frequency oscillation signal that is sent by supersonic generator, convert the high frequency mechanical oscillation to by transducer and propagate into medium, in the cleaning solvent ultrasonic wave in cleaning fluid density interphase to previous irradiation, make liquid flow and produce ten hundreds of micro-bubbles, the micro-bubble that is present in the liquid vibrates under the effect of sound field, when acoustic pressure reaches certain value, bubble increases rapidly, suddenly closed then, when bubble is closed, produce shock wave, produce thousands of atmospheric pressures around it, destroy insoluble dirt and they are scattered in the cleaning fluid, reach the effect of cleaning and washing away assembly surface.The time of utilizing ultrasonic wave to clean in the present embodiment can be between 1 to 30 minute, as it is 5 minutes, 10 minutes, 20 minutes etc., the length of concrete time can be definite according to the solidness of what and assembly of attachment on the assembly, if to frangible assembly, preferably adopt short ultrasonic time, as about 1 to 5 minute.The ultrasonic Treatment in this step also can be carried out heat treated simultaneously, and heating-up temperature also need not too high, as can be between 20 to 50 ℃.
After ultrasonic Treatment is finished,, utilize deionized water that assembly is washed (S204), wash away with the residue that it is surperficial for the attachment residue that prevents to come off still sticks on the assembly.
Then, need to carry out dried, that is, this assembly sent in the baking oven toast (S205) the assembly that cleans up.Before toasting, for reaching superior cleaning, generally need utilize inert gas that the deionized water of assembly surface is blown away, to prevent on assembly, to stay the water mark after the baking.In this step baking, temperature of oven can be arranged between 50 to 100 ℃, as is 60 ℃, 80 ℃ etc., and specific to present embodiment, because of assembly is aluminum products, temperature of oven is preferably disposed on below 80 ℃, as is 70 ℃; The time of baking can be between 10 to 60 minutes, as are 15 minutes, 30 minutes or 45 minutes etc.In addition, because of this assembly is to be applied in the vacuum equipment,, can also during its baking, in baking oven, feed inert gas for reaching higher cleannes.
After assembly carried out dried, finished cleaning, it can have been installed back (S206) in the equipment assembly.In this enforcement to the cleaning utilization of this assembly be acetone, it can not damage to some extent to the gaseous diffusion net of aluminum, can not damage its surperficial pellumina yet, can guarantee its after cleaning with clean before state be consistent.After the installation, this equipment can be directly used in the production, need not to carry out a large amount of pre-production again and recovers to clean preceding state.
Be that cleaning with the gaseous diffusion net in the plasma degumming machine is an example in the present embodiment, cleaning method of the present invention has been described, in other embodiments of the invention, can also utilize cleaning method of the present invention, clean as brace table etc. to other assemblies in this resist remover; Or to other etching apparatuss, as the assembly in ion beam milling, the reactive ion etching machine etc., clean as brace table, screw, heater etc., the damage that can avoid traditional acidic cleaning solution that each assembly is caused equally, the useful life of prolongation equipment, save the preceding pre-production recovering step of formal production, improve usage ratio of equipment.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. the cleaning method of an etching equipment component is characterized in that, comprises step:
Etching equipment component to be cleaned is immersed in the acetone soln;
With the described assembly of deionized water rinsing;
Described assembly is put into baking oven to be toasted.
2. cleaning method as claimed in claim 1 is characterized in that: the time of described immersion is between 10 to 60 minutes.
3. cleaning method as claimed in claim 1 is characterized in that: described temperature of oven is between 50 to 100 ℃.
4. cleaning method as claimed in claim 1 is characterized in that: described stoving time is between 10 to 60 minutes.
5. cleaning method as claimed in claim 1 is characterized in that: fed inert gas in the described baking oven.
6. cleaning method as claimed in claim 1 is characterized in that: before the described assembly of flushing, earlier described assembly is put into the processing that deionized water carries out ultrasonic waves for cleaning.
7. cleaning method as claimed in claim 1 is characterized in that: before the described assembly of flushing, earlier described assembly is put into the processing that acetone soln carries out ultrasonic waves for cleaning.
8. as claim 6 or 7 described cleaning methods, it is characterized in that: the described ultrasonic waves for cleaning time is between 1 to 30 minute.
9. cleaning method as claimed in claim 1 is characterized in that: described etching apparatus is a plasma degumming machine.
10. cleaning method as claimed in claim 1 is characterized in that: described assembly is an aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101169050A CN101154558A (en) | 2006-09-30 | 2006-09-30 | Method for cleaning etching equipment component |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2006101169050A CN101154558A (en) | 2006-09-30 | 2006-09-30 | Method for cleaning etching equipment component |
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| CN101154558A true CN101154558A (en) | 2008-04-02 |
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| CNA2006101169050A Pending CN101154558A (en) | 2006-09-30 | 2006-09-30 | Method for cleaning etching equipment component |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102313440A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Wafer cleaning and drying method |
| CN102806217A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Method for washing silicon wafer by organic solvent |
| CN101590390B (en) * | 2008-05-30 | 2013-01-09 | 鸿富锦精密工业（深圳）有限公司 | Dispergation device and dispergation method thereof |
| CN103341463A (en) * | 2013-07-01 | 2013-10-09 | 深圳市华星光电技术有限公司 | Ultrasonic cleaning device |
| CN103801527A (en) * | 2012-11-13 | 2014-05-21 | 沈阳芯源微电子设备有限公司 | Automatic cleaning system for CUP |
| CN106959590A (en) * | 2017-04-11 | 2017-07-18 | 安徽高芯众科半导体有限公司 | A kind of gold-tinted processing procedure litho machine parts bear photoresistance renovation process |
| CN106959591A (en) * | 2017-04-11 | 2017-07-18 | 安徽高芯众科半导体有限公司 | A kind of positive photoresistance renovation process of gold-tinted processing procedure litho machine parts |
| CN108906763A (en) * | 2018-05-16 | 2018-11-30 | 深圳仕上电子科技有限公司 | Utilize the method for acetone detergent solution removing workpiece surface film |
| CN111085497A (en) * | 2019-12-18 | 2020-05-01 | 武汉百臻半导体科技有限公司 | Polycrystalline silicon wafer cleaning system and cleaning method thereof |
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2006
- 2006-09-30 CN CNA2006101169050A patent/CN101154558A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101590390B (en) * | 2008-05-30 | 2013-01-09 | 鸿富锦精密工业（深圳）有限公司 | Dispergation device and dispergation method thereof |
| CN102313440A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Wafer cleaning and drying method |
| CN102806217A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Method for washing silicon wafer by organic solvent |
| CN103801527A (en) * | 2012-11-13 | 2014-05-21 | 沈阳芯源微电子设备有限公司 | Automatic cleaning system for CUP |
| CN103801527B (en) * | 2012-11-13 | 2015-08-26 | 沈阳芯源微电子设备有限公司 | A kind of photoresist collection cups automatic cleaning system |
| CN103341463A (en) * | 2013-07-01 | 2013-10-09 | 深圳市华星光电技术有限公司 | Ultrasonic cleaning device |
| CN103341463B (en) * | 2013-07-01 | 2015-05-06 | 深圳市华星光电技术有限公司 | Ultrasonic cleaning device |
| CN106959590A (en) * | 2017-04-11 | 2017-07-18 | 安徽高芯众科半导体有限公司 | A kind of gold-tinted processing procedure litho machine parts bear photoresistance renovation process |
| CN106959591A (en) * | 2017-04-11 | 2017-07-18 | 安徽高芯众科半导体有限公司 | A kind of positive photoresistance renovation process of gold-tinted processing procedure litho machine parts |
| CN106959591B (en) * | 2017-04-11 | 2020-10-27 | 安徽高芯众科半导体有限公司 | Method for regenerating positive photoresist of part of lithography machine in yellow light process |
| CN108906763A (en) * | 2018-05-16 | 2018-11-30 | 深圳仕上电子科技有限公司 | Utilize the method for acetone detergent solution removing workpiece surface film |
| CN111085497A (en) * | 2019-12-18 | 2020-05-01 | 武汉百臻半导体科技有限公司 | Polycrystalline silicon wafer cleaning system and cleaning method thereof |
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