CN106959591B - Method for regenerating positive photoresist of part of lithography machine in yellow light process - Google Patents
Method for regenerating positive photoresist of part of lithography machine in yellow light process Download PDFInfo
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- CN106959591B CN106959591B CN201710230618.0A CN201710230618A CN106959591B CN 106959591 B CN106959591 B CN 106959591B CN 201710230618 A CN201710230618 A CN 201710230618A CN 106959591 B CN106959591 B CN 106959591B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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Abstract
The invention relates to the technical field of photoelectricity, in particular to a method for regenerating a positive photoresist of a part of a lithography machine in a yellow light process. According to the regeneration method of the positive photoresist of the part of the lithography machine for the yellow light process, the positive photoresist of the part of the lithography machine for the yellow light process is cleaned and removed by adopting the conventional ketone organic solvent system with low toxicity and almost no toxicity so as to be regenerated and used, three different types of ketone organic solvents are compounded according to a scientific and reasonable proportion, the dissolving power and the evaporation rate of the compounded solvent are greatly improved, the cleaning effect is good, the cleaning solution is low in cost and is environment-friendly, meanwhile, the ketone organic solvent has reducibility, the corrosion and the aging of the surface of the part can be well inhibited, the part can be well protected from being corroded and aged, the regeneration and use effect of the part is ensured, and the use of the part is not influenced; the regeneration frequency of the positive photoresist of the photo-etching machine part for regenerating the yellow light process by using the soaking cleaning liquid and the regeneration method can reach 100 times.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a method for regenerating a positive photoresist of a part of a lithography machine in a yellow light process.
Background
The photolithography technique is to transfer the pattern on the photomask to PR, and then to soak the PR irradiated by light with solvent to dissolve or retain the PR irradiated portion to form the photoresist pattern completely identical to or complementary to the photomask; the technology used by the yellow light is a micro-lithography technology, the yellow light process refers to that an environment illumination light source of the micro-lithography process adopts yellow light, and the accuracy level of a yellow light process circuit is high; lithography machine (Mask Aligner) also known as: a mask alignment exposure machine, an exposure system, a lithography system, etc.; the light cup is a core component of the photoetching machine, and the photoetching is carried out again after the photoresist layer is cleaned and removed if the defect abnormity occurs after the photoetching development; the light resistance is divided into positive light resistance and negative light resistance, the positive light resistance is the main position in the technical field of photoetching, in the prior art, most of the light resistance is solidified or liquid positive light resistance is removed by adopting an alkaline solvent, and the cleaning agent in the formula of the alkaline solvent has poor cleaning effect and can cause aging and corrosion to parts; or special cleaning equipment is used, so that the production cost is high. Therefore, a regeneration method for cleaning and removing the cured or liquid positive photoresist of the photo cup of the photoetching machine so as to enable the photo cup to be reused is urgently needed, the use cost can be greatly reduced, and the service life and the use effect of the photoetching machine are improved; the cleaning is carried out by using an organic solvent, so that the toxicity is low, the cleaning effect is good, the environment is friendly, the cost is low, and the aging and corrosion to the light cup are avoided; the cleaning method is simple, and the production efficiency is greatly improved.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects of the background art, the invention discloses a method for regenerating a positive photoresist of a part of a yellow light processing photoetching machine, which can greatly reduce the use cost and improve the service life and the use effect of the photoetching machine; the act-8 is adopted in the positive photoresist process, a ketone organic solvent system is used for cleaning, the toxicity is low, the cleaning effect is good, the environment is friendly, the cost is low, and meanwhile, the aging and the corrosion to the light cup are avoided; the cleaning method is simple.
The technical scheme is as follows: in order to achieve the above purpose, the invention discloses a method for regenerating a positive photoresist of a part of a lithography machine for a yellow light process, which comprises the following steps:
1) selecting and preparing a soaking cleaning solution: the selection of the soaking cleaning liquid is a ketone organic solvent system, the ketone organic solvent system is a compound liquid prepared by compounding three ketone organic solvents according to a proportion, and the three ketone organic solvents comprise a ketone organic solvent a, a ketone organic solvent b and a ketone organic solvent c;
2) soaking and washing: pouring the soaking cleaning solution prepared in the step 1) into a soaking cylinder, soaking the part to be cleaned and regenerated into the soaking cleaning solution, and dissolving most of the solidified or liquid positive photoresist;
3) rinsing: rinsing the soaked parts with a solvent to remove the residual positive photoresist and the soaking cleaning solution on each edge and corner of the parts so as to facilitate the regeneration and the use of the parts;
4) washing with water: washing the rinsed parts with ultrapure water to remove residual soaking cleaning liquid and rinsing solvent of the parts;
5) and (3) drying: and (5) drying the washed parts in ultra-clean drying equipment.
In addition, the compounding volume ratio of the three ketone organic solvents in the step 1) is that the ketone organic solvent a: ketone organic solvent b: ketone organic solvent c ═ 2:1: 1.
In addition, the three ketone organic solvents in the step 1) are acetone; the ketone organic solvent b is 2-propenyl cyclohexanone; the ketone organic solvent c is 4-propylene oxy-2-hydroxybenzophenone.
The three ketone organic solvents in the step 1), wherein the ketone organic solvent a is methyl pentanone; the ketone organic solvent b is 4-ethyl formate cyclohexanone; the ketone organic solvent c is 4-propylene oxy-2-hydroxybenzophenone.
And the soaking time in the step 2) is 1.5-2.5 h, preferably 2 h. The selection of the soaking time is tested for a long time, the time is too short, the positive photoresist layer is not dissolved enough after soaking, and a large amount of positive photoresist layer is remained; after the soaking time exceeds 2 hours, the solubility of the positive photoresist layer reaches the lowest, the dissolution rate is low, and the soaking time is too long, so that the subsequent rinsing and water washing procedures of parts are not facilitated; in general, 2h is most suitable.
The solvent for rinsing in step 3) is an acetone solvent, and the rinsing time is 8 to 15min, preferably 10 min. The strong solvent with extremely fast volatilization rate of acetone is very conventional and has low cost, and the rinsing capacity and the rinsing effect are greatly improved; the rinsing time is short, and the production efficiency is high; time and cost are saved.
In addition, the time for washing with ultrapure water in the step 4) is 25-35min, preferably 30 min. The choice of the ultrapure water ensures that other impurities cannot be brought in, and water drops cannot be left on the surfaces of the parts, so that the later use effect cannot be influenced; the selection of the washing time determines whether the parts are washed thoroughly, the washing time is too short, the washing is incomplete, and residual liquid remains; the washing time is too long, which is not favorable for controlling the production cost.
In addition, the drying temperature in the step 5) is 55-65 ℃, the drying time is 1.5-2.5 h, preferably the drying temperature is 60 ℃, and the drying time is 2 h. If the temperature is too low and the time is too short, the surface of the part is insufficiently dehydrated, meanwhile, the production period is prolonged, the production efficiency is reduced, and the production requirements of enterprises are not facilitated; too high a temperature easily causes decomposition and deterioration of the surface of the component, and too long a time easily causes deterioration of the component.
In addition, the equipment adopted by the positive photoresist process of the yellow light process photoetching machine part is TELClean Track act-8, and the manufacturer: TEL (Tokyo Electron Limited) model: clean Track act-8.
The technical scheme shows that the invention has the following beneficial effects: compared with the prior art, the method for regenerating the positive photoresist of the part of the lithography machine in the yellow light process has the following advantages: the cleaning solution is environment-friendly, and meanwhile, the ketone organic solvent has reducibility, can well inhibit the corrosion and the aging of the surface of the part, well protects the part from being corroded and aged, ensures the regeneration and use effect of the part, and cannot influence the use of the part; the regeneration frequency of the positive photoresist of the photo-etching machine part for regenerating the yellow light process by using the soaking cleaning liquid and the regeneration method can reach 100 times.
Detailed Description
The following describes in detail embodiments of the present invention with reference to table 1.
Table 1 shows the condition parameters of the steps of the method for regenerating the positive photoresist of the parts of the lithography machine for yellow light process in examples 1-6.
Table 1 reagents and parametric conditions for the various steps described in the examples
According to the method for regenerating the positive photoresist of the part of the lithography machine in the yellow light process, the soaking time is optimally 2 hours, the rinsing liquid is acetone, the rinsing time is optimally 10min, the washing time is optimally 30min, the ultra-clean drying temperature is optimally 60 ℃, and the time is 2 hours.
The method for regenerating the positive photoresist of the photolithography machine part for yellow light process described in embodiments 1 to 6, comprising the steps of:
1) selecting and preparing a soaking cleaning solution: the selection of the soaking cleaning liquid is a ketone organic solvent system, the ketone organic solvent system is a compound liquid prepared by compounding three ketone organic solvents according to a proportion, the three ketone organic solvents comprise a ketone organic solvent a, a ketone organic solvent b and a ketone organic solvent c, and the volume ratio of the three ketone organic solvents is that the ketone organic solvent a: ketone organic solvent b: ketone organic solvent c ═ 2:1: 1;
2) soaking and washing: pouring the soaking cleaning solution prepared in the step 1) into a soaking cylinder, soaking the part to be cleaned and regenerated into the soaking cleaning solution, and dissolving most of the solidified or liquid positive photoresist;
3) rinsing: rinsing the soaked parts with a solvent to remove the residual positive photoresist and the soaking cleaning solution on each edge and corner of the parts so as to facilitate the regeneration and the use of the parts;
4) washing with water: washing the rinsed parts with ultrapure water to remove residual soaking cleaning liquid and rinsing solvent of the parts;
5) and (3) drying: and (5) drying the washed parts in ultra-clean drying equipment.
The equipment used in the process of manufacturing the positive photoresist of the part of the lithography machine in the yellow light manufacturing process in the regeneration method is TEL clean track act-8, manufacturer: TEL (Tokyo Electron Limited) model: clean Track act-8.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the present invention, and these modifications should also be construed as the protection scope of the present invention.
Claims (1)
1. A method for removing a positive photoresist of a part of a lithography machine in a yellow light process is characterized by comprising the following steps: the method comprises the following steps:
1) selecting and preparing a soaking cleaning solution: the selection of the soaking cleaning liquid is a ketone organic solvent system, the ketone organic solvent system is a compound liquid prepared by compounding three ketone organic solvents according to a proportion, and the three ketone organic solvents comprise a ketone organic solvent a, a ketone organic solvent b and a ketone organic solvent c;
2) soaking and washing: pouring the soaking cleaning solution prepared in the step 1) into a soaking cylinder, soaking the part to be cleaned and regenerated into the soaking cleaning solution, and dissolving most of the solidified or liquid positive photoresist;
3) rinsing: rinsing the soaked parts by using a rinsing liquid to clean residual positive photoresist and soaking cleaning liquid on each edge and corner of the parts so as to facilitate the regeneration and the use of the parts;
4) washing with water: washing the rinsed parts with ultrapure water to remove residual soaking cleaning liquid and rinsing solvent of the parts;
5) and (3) drying: drying the washed parts in ultra-clean drying equipment;
the compounding volume ratio of the three ketone organic solvents in the step 1) is that of the ketone organic solvent a: ketone organic solvent b: ketone organic solvent c = 2:1: 1;
the three ketone organic solvents in the step 1), wherein the ketone organic solvent a is acetone; the ketone organic solvent b is 2-propenyl cyclohexanone; the ketone organic solvent c is 4-propylene oxy-2-hydroxybenzophenone;
the soaking time in the step 2) is 2 hours;
the solvent used for rinsing in the step 3) is an acetone solvent, and the rinsing time is 10 min;
the washing time of the ultrapure water in the step 4) is 30 min;
the drying temperature in the step 5) is 60 ℃, and the time is 2 hours;
the equipment used in the process is Clean Track act-8.
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| CN201710230618.0A CN106959591B (en) | 2017-04-11 | 2017-04-11 | Method for regenerating positive photoresist of part of lithography machine in yellow light process |
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| CN106959591B true CN106959591B (en) | 2020-10-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191891A (en) * | 1996-12-26 | 1998-09-02 | 克拉瑞特国际有限公司 | Rinsing solution |
| CN101154558A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning etching equipment component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102241209B (en) * | 2010-05-11 | 2014-03-12 | 中国科学院化学研究所 | Preparation method for regenerated waterless offset printing plate |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191891A (en) * | 1996-12-26 | 1998-09-02 | 克拉瑞特国际有限公司 | Rinsing solution |
| CN101154558A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning etching equipment component |
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Denomination of invention: A regeneration method of positive photoresist for lithography machine parts in yellow light process Effective date of registration: 20210330 Granted publication date: 20201027 Pledgee: Chizhou Jiuhua Hengxin financing Company limited by guarantee Pledgor: ANHUI GAOXIN ZHONGKE SEMICONDUCTOR Co.,Ltd. Registration number: Y2021980002274 |
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Date of cancellation: 20220826 Granted publication date: 20201027 Pledgee: Chizhou Jiuhua Hengxin financing Company limited by guarantee Pledgor: ANHUI GAOXIN ZHONGKE SEMICONDUCTOR CO.,LTD. Registration number: Y2021980002274 |