KR20160104454A - Resist stripper composition and method of stripping resist using the same - Google Patents

Abstract

The present invention relates to a resist stripping solution composition and a method for stripping resist using the same. More specifically, the present invention relates to a resist stripping solution composition which includes (A) hydroxylamine-based compound, (B) an amide compound having a specific structure, and (C) a tertiary alkanolamine compound having a specific structure, thereby exhibiting excellent resist patterns and removability (stripping ability) for etching residues as well as outstanding resist solubility and corrosion resistance. In addition, the resist stripping solution composition can minimize re-adsorption and reattachment of the stripping solution and solubilized resist. The present invention further relates to a method for stripping resist using the same.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping liquid composition and a resist stripping method using the resist stripping liquid composition.

The present invention relates to a resist stripping liquid composition and a stripping method of a resist using the same.

2. Description of the Related Art In recent years, the use of flat panel display devices has been increasing. As the use of flat panel display devices has become more and more popular, there is a growing demand for larger flat panel display devices.

As the flat panel display device has become larger, the signal speed is required to increase in the wiring. Copper having a lower resistivity than aluminum is used as a wiring material. In order to increase the number of pixels per unit area, Is required.

In addition, a photolithography process generally used for pattern formation in the manufacture of a flat panel display device is a process in which a photoresist is coated on a substrate and exposed to light, followed by dry or wet etching to form a pattern, Is removed by using a stripping agent. In addition to the above-mentioned demand, the performance required for the stripping solution used in the stripping step is also increased.

Specifically, it is required not only to improve the dissolution rate of the resist, increase the number of processed substrates, but also to increase the removal ability of the etching residue after the dry etching process. In addition, an increase in corrosion inhibiting ability against metal wiring including copper is also required.

Korean Unexamined Patent Publication No. 2002-0023068 discloses a liquid composition comprising a polar organic solvent, at least one quaternary ammonium hydroxide, at least one aromatic amine containing at least one primary amino group, However, the effect of improving the solubility of the resist can not be expected, and there is a problem that the corrosion resistance to the metal wiring including aluminum is large and the peeling force against the resist is low.

Korea Patent Publication No. 2012-0023068

An object of the present invention is to provide a resist stripper composition which is excellent in removing ability (stripping force) of a resist pattern and an etching residue and has improved solubility of the resist.

The present invention provides a resist stripper composition having improved corrosion resistance against metal wiring.

It is an object of the present invention to provide a resist stripper liquid composition which minimizes re-adhesion and re-adhesion of a stripper solution and a dissolved resist after resist stripping.

It is still another object of the present invention to provide a resist stripping method for stripping a residual resist using the resist stripper composition and a method of manufacturing an image display including the resist stripping method.

1. A resist stripping composition comprising (A) a hydroxylamine-based compound, (B) an amide compound represented by the following formula (1) and (C) a tertiary alkanolamine compound represented by the following formula

[Chemical Formula 1]

(Wherein R ₁ to R ₃ are each independently hydrogen or an alkyl group having 1 to 3 carbon atoms)

(2)

(Wherein R ₄ to R ₆ are each independently an alkyl group having 1 to 5 carbon atoms or a hydroxyalkyl group having 1 to 5 carbon atoms, and R ₄ to R ₆ Lt; / RTI > is a hydroxyalkyl group having 1 to 5 carbon atoms).

2. The resist stripping composition according to 1 above, wherein the hydroxylamine-based compound (A) is contained in an amount of 0.01 to 35 parts by weight based on 100 parts by weight of the composition.

3. The method of claim 1, wherein the amide compound (B) is selected from the group consisting of formamide, N-methylformamide, N-ethylformamide, N-propylformamide, N, N-dimethylformamide, At least one selected from the group consisting of amide, N-methylacetamide, N, N-dimethylacetamide, acetamide, N, N-dimethylpropionamide, N, N-dimethylethylamide and N, By weight of the resist stripper composition.

4. The resist stripping composition according to 1 above, wherein the amide compound (B) is contained in an amount of 30 to 99 parts by weight based on 100 parts by weight of the total composition.

5. The method of claim 1, wherein the (C) tertiary alkanolamine compound is selected from the group consisting of N-methyldiethanolamine, N, N-dimethylethanolamine, triethanolamine, N, N-diethylethanolamine and 3- Propanol, and 1-propanol.

6. The resist stripper composition according to 1 above, wherein the (C) tertiary alkanolamine compound is contained in an amount of 0.01 to 35 parts by weight based on 100 parts by weight of the composition.

7. The antistatic composition according to item 1, wherein at least one (D) corrosion inhibitor selected from the group consisting of an azole compound, a quinone compound, an alkyl gallate compound having an alkyl group having 1 to 20 carbon atoms and an organic acid amide ester compound By weight of the resist stripper composition.

8. The anticorrosive composition according to 7 above, wherein said corrosion inhibitor (D) is 4,6-dimethyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, Tetrahydro-1H-benzo [1,2,3] triazole, 4-methyl-1-hydrogen-benzotriazole, 5- Methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H- benzo [ ] Triazole and 6-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole.

9. The resist stripping composition according to 7 above, wherein the corrosion inhibitor (D) is contained in an amount of 0.001 to 10 parts by weight based on 100 parts by weight of the composition.

10. The resist stripping composition according to 1 above, further comprising (E) a polar solvent.

11. The resist stripping composition according to 10 above, wherein the (E) polar solvent is contained in an amount of 0.1 to 80 parts by weight based on 100 parts by weight of the composition.

12. The resist stripping composition according to any one of items 1 to 11, which is used for stripping a resist on a substrate having a metal wiring including aluminum or copper formed thereon.

13. A method of peeling a resist, which comprises peeling off a remaining resist after an etching process of a substrate on which a metal film has been deposited with a peeling solution composition of any one of 1 to 11 above.

14. A manufacturing method of an image display device comprising the resist stripping method of the above 13.

The resist stripper composition of the present invention is excellent in the removal ability (peeling force) of the resist pattern and the etching residue and is excellent in the dissolution ability of the resist.

The resist stripping solution composition of the present invention is excellent in the ability to exert a great effect on metal wiring.

The resist stripper composition of the present invention can minimize the re-adsorption and re-adhesion of the stripper solution and the dissolved resist after resist stripping.

FIG. 1 is a photograph showing a state in which a substrate on which a resist pattern has been deposited is immersed in the release liquid composition of Example 1, and no stain is observed when the substrate is washed with deionized water.
FIG. 2 is a photograph showing a state in which a substrate having a patterned resist is immersed in the peeling liquid composition of Comparative Example 2, and then the substrate is contacted with deionized water when the substrate is washed with deionized water, thereby causing severe unevenness.
FIG. 3 is a photograph showing a state in which unevenness due to deionized water is observed when the substrate with the resist pattern is immersed in the peeling liquid composition of Comparative Example 3 and then washed with deionized water, and the peeling liquid itself remains.

The present invention relates to a process for producing a resist composition which comprises (A) a hydroxylamine-based compound, (B) an amide compound having a specific structure and (C) a tertiary alkanolamine compound having a specific structure, And has excellent anticorrosion property and is capable of minimizing re-adsorption and reattaching of a dissolution liquid and a dissolution resist, and a resist stripping method using the resist stripping liquid composition.

Hereinafter, the present invention will be described in detail.

Resist Peeling liquid  Composition

The resist stripping composition of the present invention comprises (A) a hydroxylamine-based compound.

The hydroxylamine-based compound (A) strongly penetrates into the polymer matrix of the resist or crosslinked resist under various process conditions such as dry or wet etching, ashing, or ion implant processing It serves to break bonds existing in the molecule or between molecules. Thereby forming an empty space in a structurally weak portion in the resist remaining on the substrate, thereby allowing the resist to be easily removed by deforming the resist into an amorphous polymer gel lump state.

In one embodiment of the present invention, the hydroxylamine-based compound (A) may be represented by the following general formula (3).

(3)

The content of the hydroxylamine compound (A) according to the present invention is not particularly limited and may be specifically included in the range of 0.01 to 35 parts by weight, preferably 0.1 to 5 parts by weight based on 100 parts by weight of the total composition, It is possible to secure the corrosion resistance, the dissolving power and the rinsing power.

The resist stripping liquid composition of the present invention comprises (B) an amide compound represented by the following general formula (1).

[Chemical Formula 1]

In the formulas, R ₁ to R ₃ are each independently hydrogen or an alkyl group having 1 to 3 carbon atoms.

The resist stripping liquid composition of the present invention can dissolve the resist polymer (A) which is gelled by the hydroxylamine-based compound by including the amide compound (B). Since the amide compound (B) contains an alkyl group having 1 to 3 carbon atoms and has a relatively short chain length of the alkyl group, the amide compound (B) has water solubility. Therefore, it is easy to remove the stripping liquid during rinsing by deionized water, Minimizing resorption and reattachment of the liquid and dissolved resist. In addition, since it is possible to dissolve excess resist, the number of treatments can be improved, which is economical.

In one embodiment of the present invention, the amide compound (B) represented by Formula (1) is at least one selected from the group consisting of formamide, N-methylformamide, N-ethylformamide, N-propylformamide, N, In the group consisting of diethylformamide, N-methylacetamide, N, N-dimethylacetamide, acetamide, N, N-dimethylpropionamide, N, N-dimethylethylamide and N, And in this case, the effect of improving the solubility and the number of treatments of the resist polymer is remarkable.

The content of the (B) amide compound according to the present invention is not particularly limited and may be specifically 30 to 99 parts by weight, preferably 35 to 99 parts by weight, per 100 parts by weight of the total composition, The dissolution power of the resist and the resist are remarkable, and the effect of improving the number of treatments can be maximized.

The resist stripping liquid composition of the present invention comprises (C) a tertiary alkanolamine compound represented by the following general formula (2).

(2)

Wherein R ₄ to R ₆ are each independently an alkyl group having 1 to 5 carbon atoms or a hydroxyalkyl group having 1 to 5 carbon atoms, and R ₄ to R ₆ At least one of them is a hydroxyalkyl group having 1 to 5 carbon atoms, preferably at least two of them are hydroxyalkyl groups having 1 to 5 carbon atoms.

The (C) alkanolamine compound serves to prevent re-adsorption and reattachment of the exfoliation solution and the dissolved resist during the rinsing step. It also serves to prevent corrosion by preventing oxidation of metal film including aluminum or copper.

In one embodiment of the present invention, the (C) tertiary alkanolamine compound is selected from the group consisting of N-methyldiethanolamine, N, N-dimethylethanolamine, triethanolamine, N, N-diethylethanolamine and 3- -1-propanol. In this case, the effect of preventing re-adsorption of the resist and preventing corrosion is remarkable.

The content of the (C) tertiary alkanolamine compound is not particularly limited and may be specifically included in an amount of 0.01 to 35 parts by weight, preferably 0.1 to 5 parts by weight, per 100 parts by weight of the total composition, The effect of preventing the resorption of the resist and the effect of preventing corrosion can be maximized.

If necessary, the resist stripping solution composition of the present invention may further contain (D) a corrosion inhibitor.

The type of the corrosion inhibitor (D) is generally used in the art and is not particularly limited as long as it does not deviate from the object of the present invention. Specifically, an azole compound, a quinone compound, an alkyl group having 1 to 20 carbon atoms An organic acid amide ester compound, and the like, among which a triazole-based compound is preferable. These may be used alone or in combination of two or more.

Examples of the azole-based compound include 2,2 '- [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bist methanol, 2,2' - [[[ Methyl] imino] bisethanol, 2,2 '- [[[methyl-1-hydrogen-benzotriazol- 1 -yl] Benzimidazol-1-yl] methyl] imino] biscarboxylic acid, 2,2'- Amine, 2,2 '- [[[amine-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol and 4,6-dimethyl-4,5,6,7-tetrahydro- Benzo [1,2,3] triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, Triazole, 5-methyl-1-hydrogen-benzotriazole, 4-methyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, , 6,7-tetrahydro-1H-benzo [1,2,3] triazole and 6-methyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] And a quinone series Examples of the compound include 1,2-benzoquinone, 1,4-benzoquinone, 1,4-naphthoquinone, and anthraquinone, and examples of the alkyl gallate compound having an alkyl group having 1 to 20 carbon atoms include Examples of the organic acid amide ester compound include succinic amide ester, maleic amide ester, maleic amide ester, fumaric amide ester, oxalic amide, maleic anhydride, Maleic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, citric amide esters, tartaric amide esters, glucolic amide esters, formic amide esters and ureic amide esters, and the like. These may be used alone or in combination of two or more.

The content of the (D) corrosion inhibitor is not particularly limited and may be specifically 0.001 to 10 parts by weight, preferably 0.005 to 5 parts by weight, based on 100 parts by weight of the total composition. It is possible to manufacture an economical composition while effectively preventing the corrosion of the metal wiring in the above content range, and it is also easy to control the viscosity of the composition.

If necessary, the resist stripper composition of the present invention may further comprise (E) a polar solvent.

The present invention includes the above polar solvent to (B) dissolve the resist polymer gelled together with the amide compound, facilitate the removal of the stripping solution by deionized water during the rinsing process after stripping the resist, The effect of preventing adsorption and redeposition can be remarkable.

The polar solvent may be classified into a protonic polar solvent and an aprotic polar solvent. These solvents may be used alone or in combination of two or more.

Examples of the protonic polar solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol But are not limited to, monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol, polypropylene glycol, Alkylene glycol monoalkyl ethers such as monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether, propylene glycol monoalkyl ethers such as propylene glycol monoalkyl ether Methyl ether acetate, 4-hydroxymethyl-1,3-dioxolane, 2,2-dimethyl-4-hydroxymethyl-1,3-dioxolane, tetrahydroperfuryl alcohol and the like, It is not. These may be used alone or in combination of two or more.

Examples of the aprotic polar solvent include, but are not limited to, pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone, dimethylsulfoxide, and the like. These may be used alone or in combination of two or more.

Further, if necessary, the present invention may further include deionized water as an example of the polar solvent.

The deionized water can be mixed with the amide compound (B) and the polar solvent so as to quickly and completely remove the organic contaminants remaining on the substrate and the resist stripping solution during rinsing with deionized water.

The content of the (E) polar solvent is not particularly limited and may be specifically from 0.1 to 80 parts by weight, preferably from 0.5 to 80 parts by weight, based on 100 parts by weight of the total composition.

When the (E) polar solvent is contained within the above-mentioned content range, the dissolution amount of the resist can be controlled to prevent the reduction in the number of treatments and maximize the rinsing power by deionized water.

According to one embodiment of the present invention, the resist stripping composition described above is excellent in the palatability, so that it can be applied to a substrate on which a metal wiring is formed, and preferably to a resist stripping of a substrate on which a metal wiring including aluminum or copper is formed have. In this specification, aluminum and copper are concepts that include pure aluminum and copper as well as alloys thereof .

Resist  Peeling method and manufacturing method of image display device

The present invention provides a resist stripping method for stripping a remaining resist after an etching process of a substrate on which a conductive metal film has been deposited using the resist stripper composition.

The resist to be peeled off in the resist stripping method of the present invention is a resist which remains after the etching process of the substrate on which the conductive metal film is deposited. The resist film in the exposed or unexposed area is developed to form a resist pattern, Refers to a resist present on a non-etched area later.

The resist stripper composition is particularly preferable when the metal film is made of a metal selected from the group consisting of aluminum, copper, and the like since the resist stripper composition is remarkably excellent in corrosion resistance.

In addition, the removing method of the present invention may be carried out by performing a dry etching process such as an etchback process or a CMP (Chemical Mechanical Polishing) process without performing a resist pattern forming process using a mask, And a method of peeling off with the peeling liquid composition of the invention.

The peeling method may be a deposition method, a spraying method, or a deposition and spraying method. As the peeling condition, the temperature is 15 to 100 캜, preferably 30 to 70 캜, and the performing time is 30 seconds to 40 minutes, preferably 1 to 20 minutes, but is not limited thereto.

The resist stripping composition of the present invention and the stripping method using the resist stripping composition of the present invention can be used not only for general resist removal but also for removal of resist and etching residue which are modified or cured by etching gas and high temperature.

Further, the present invention provides a method of manufacturing an image display device including the step of peeling the resist.

In the present invention, a manufacturing step of a typical image display apparatus can be applied except for the step of peeling off the resist described above.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be illustrative of the invention and are not intended to limit the scope of the claims. It will be apparent to those skilled in the art that such variations and modifications are within the scope of the appended claims.

Example  And Comparative Example

A resist stripping liquid composition having the composition and content shown in Table 1 below was prepared.

division (A) Hydroxyl
Amine system (B) an amide compound (C) a tertiary alkanolamine (D) Corrosion inhibitor (E) polar solvent Kinds Weight portion Kinds Weight portion Kinds Weight portion Kinds Weight portion Kinds Weight portion







room
city
Yes One a-1 0.5 b-1 98 c-1 One - - e-4 0.5 2 a-1 0.5 b-2 97.95 c-1 One d-1 0.05 e-4 0.5 3 a-1 0.5 b-3 78 c-2 One - - e-1
e-4 20
0.5 4 a-1 0.5 b-4 58 c-1 One - - e-2
e-4 20
20.5 5 a-1 0.5 b-5 57.95 c-1 One d-1 0.05 e-2
e-4 20
20.5 6 a-1 0.5 b-1 b-2 30
28 c-1 One - - e-3
e-4 20
20.5 7 a-1 0.5 b-3 b-4 20
37.95 c-1 One d-2 0.05 e-3
e-4 20
20.5 8 a-1 0.5 b-1 58 c-1
c-2 0.5
0.5 - - e-3
e-4 20
20.5 9 a-1 0.5 b-1 57.95 c-3
c-4 0.5
0.5 d-2 0.05 e-3
e-4 20
20.5 10 a-1 10 b-5 78.95 c-1 One d-1 0.05 e-4 10 11 a-1 41 b-5 16.95 c-1 One d-1 0.05 e-4 41 12 a-1 0.2 b-5 99.5 c-1 0.1 - - e-4 0.2 13 a-1 0.5 b-5 88.95 c-1 10 d-1 0.05 e-4 0.5 14 a-1 0.5 b-5 57.95 c-1 41 d-1 0.05 e-4 0.5



ratio
School
Yes One - - b-1 98 c-1 2 - - - - 2 a-1 0.5 - - c-1 One - - e-2
e-4 98
0.5 3 a-1 0.5 b-1 99 - - - - e-4 0.5 4 a-1 0.5 - - - - - - e-3
e-4 99
0.5 5 a-1 0.5 b-6 57.95 c-1 One d-1 0.05 e-2
e-4 20
20.5 6 a-1 0.5 b-5 57.95 c-5 One d-1 0.05 e-2
e-4 20
20.5 7 a-1 0.5 b-5 57.95 c-6 One d-1 0.05 e-2
e-4 20
20.5 8 a-1 0.5 b-5 57.95 c-7 One d-1 0.05 e-2
e-4 20
20.5

a-1: Hydroxylamine

b-1: N-methylformamide

b-2: N, N-diethylformamide

b-3: N, N-dimethylacetamide

b-4: N, N-Dimethylpropionamide

b-5: N, N-Dimethylbutylamide

b-6: N, N-Dimethyloctylamide

c-1: N-methyldiethanolamine

c-2: Triethanolamine

c-3: N, N-Dimethylethanolamine

c-4: N, N-Diethylethanolamine

c-5: Trimethylamine

c-6: Monoethanolamine

c-7: Diethanolamine

d-1: 4-Methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

d-2: 5-Methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

e-1: 2,2-dimethyl-4-hydroxymethyl-1,3-dioxolane

e-2: Diethylene glycol monoethyl ether

e-3: Dimethyl sulfoxide

e-4: Deionized water

Experimental Example  One: Peel force  evaluation

In order to confirm the peeling effect of the resist stripping solution composition, a resist was coated on a glass substrate using a spin coater.

The substrate coated with the resist was hard-baked at 170 캜 for 10 minutes to prepare 2 cm * 2 cm. The peelability was evaluated by a method in which the peeling liquid composition was kept at a constant temperature of 50 캜 and then the object was immersed and the peeling time was visually observed. The results are shown in Table 2 below.

<Evaluation Criteria>

◎: Resist removal time is less than 3 minutes

○: Resist removal time from 3 minutes to less than 5 minutes

DELTA: Resist removal time was 5 minutes or more and less than 8 minutes

X: Resist removal time is more than 8 minutes

Experimental Example  2: Corrosion resistance  evaluation

The temperature of the peeling liquid formed by the resist stripping solution composition was kept constant at 50 占 폚, and the substrate on which the Mo / Al / Mo and Cu / Ti wiring lines were exposed was immersed in the peeling solution for 30 minutes. Thereafter, the corrosion resistance was evaluated using a scanning electron microscope (SEM, Hitach S-4700) after washing and drying, and the results are shown in Table 2 below.

<Evaluation Criteria>

◎: When no corrosion is observed on the surface and interface of metal wiring

○: When fine corrosion is observed on the surface and interface of metal wiring,

?: When it is difficult to use due to corrosion on the metal wiring surface and interface

X: All metal wiring is corroded and disappeared.

Experimental Example  3: solvency (Processing number) evaluation

5% by weight of the solidified photoresist was added to the peeling liquid composition and dissolved at 300 rpm for 30 minutes. The remaining photoresist was filtered through filter paper, and the weight was measured to calculate the solubility. When the amount of the photoresist was completely dissolved and the remaining amount was not measured, the amount of the photoresist was 100%. The results are shown in Table 2 below.

Experimental Example  4: Rinse power  evaluation

After the peeling step, the substrate was patterned with a resist to evaluate the degree of smear caused by the contact between the dissolving resist stripping liquid and the deionized water remaining on the substrate, and the resist was patterned. And deposited. Thereafter, the slurry was taken out, subjected to deionized water, allowed to stand for 1 minute, and then washed with deionized water for 1 minute. After cleaning, the substrate was thoroughly dried with nitrogen to remove deionized water remaining on the substrate, and the degree of staining was confirmed using a halogen lamp. The results are shown in Table 2 below, and photographs of the rinse force evaluation results of Example 1, Comparative Example 2 and Comparative Example 3 are shown in Figs. 1 to 3, respectively.

<Evaluation Criteria>

◎: When no stain is observed

○: Fine staining was observed at the interface with the deionized water.

?: Severe unevenness occurred at the interface in contact with deionized water

X: Smearing by deionized water is observed, and the peeling liquid itself remains

division Peel force Corrosion resistance solvency
(%) Rinse power Al Mo Cu Ti Example 1 ◎ ◎ ◎ ○ ◎ 95.3 ◎ Example 2 ◎ ◎ ◎ ◎ ◎ 94.5 ◎ Example 3 ◎ ◎ ◎ ○ ◎ 94.0 ◎ Example 4 ◎ ◎ ◎ ○ ◎ 93.6 ◎ Example 5 ◎ ◎ ◎ ◎ ◎ 94.9 ◎ Example 6 ◎ ◎ ◎ ○ ◎ 94.6 ◎ Example 7 ◎ ◎ ◎ ◎ ◎ 94.2 ◎ Example 8 ◎ ◎ ◎ ○ ◎ 93.9 ◎ Example 9 ◎ ◎ ◎ ◎ ◎ 93.7 ◎ Example 10 ◎ ○ ◎ ◎ ◎ 94.7 ◎ Example 11 ◎ ○ ◎ ○ ◎ 85.9 ○ Example 12 ○ ◎ ◎ ◎ ◎ 93.1 ○ Example 13 ◎ ○ ◎ ◎ ◎ 93.5 ◎ Example 14 ◎ ○ ◎ ○ ◎ 90.2 ○ Comparative Example 1 X ◎ ◎ ○ ◎ 94.1 ◎ Comparative Example 2 ◎ ◎ ◎ ○ ◎ 55.4 △ Comparative Example 3 ◎ ◎ ◎ △ ◎ 93.5 X Comparative Example 4 ◎ ◎ ◎ △ ◎ 70.2 X Comparative Example 5 ◎ ◎ ◎ ◎ ◎ 77.2 X Comparative Example 6 ◎ ◎ ◎ △ ◎ 93.8 X Comparative Example 7 ◎ X ◎ X ◎ 94.3 X Comparative Example 8 ◎ X ◎ X ◎ 94.3 X

Referring to Table 2, it can be confirmed that the embodiments included in the scope of the present invention are superior in peeling force and resist solubility as compared with Comparative Examples. Further, it was found that the corrosion resistance against the metal wiring was improved, and it was possible to minimize the re-adsorption and re-adhesion of the exfoliation liquid and the dissolved resist after the resist stripping.

Claims (14)

(A) a hydroxylamine-based compound, (B) an amide compound represented by the following formula (1) and (C) a tertiary alkanolamine compound represented by the following formula (2):
[Chemical Formula 1]

(Wherein R ₁ to R ₃ are each independently hydrogen or an alkyl group having 1 to 3 carbon atoms)
(2)

(Wherein R ₄ to R ₆ are each independently an alkyl group having 1 to 5 carbon atoms or a hydroxyalkyl group having 1 to 5 carbon atoms, and R ₄ to R ₆ Lt; / RTI &gt; is a hydroxyalkyl group having 1 to 5 carbon atoms).
The resist stripper composition according to claim 1, wherein the hydroxylamine-based compound (A) is contained in an amount of 0.01 to 35 parts by weight based on 100 parts by weight of the composition.
[3] The method according to claim 1, wherein the amide compound (B) is at least one compound selected from the group consisting of formamide, N-methylformamide, N-ethylformamide, N-propylformamide, N, N-dimethylformamide, At least one selected from the group consisting of N, N-dimethylacetamide, N, N-dimethylacetamide, N, N-dimethylpropionamide, N, N- Resist stripper composition.
The resist stripper composition according to claim 1, wherein the amide compound (B) is contained in an amount of 30 to 99 parts by weight based on 100 parts by weight of the total composition.
[3] The method according to claim 1, wherein the (C) tertiary alkanolamine compound is at least one selected from the group consisting of N-methyldiethanolamine, N, N-dimethylethanolamine, triethanolamine, N, N-diethylethanolamine and 3- Propanol, and the like.
The resist stripper composition according to claim 1, wherein the (C) tertiary alkanolamine compound is contained in an amount of 0.01 to 35 parts by weight based on 100 parts by weight of the composition.
The positive resist composition according to claim 1, further comprising at least one (D) corrosion inhibitor selected from the group consisting of an azole compound, a quinone compound, an alkyl gallate compound having an alkyl group having 1 to 20 carbon atoms, and an organic acid amide ester compound , A resist stripping liquid composition.
[7] The method of claim 7, wherein the corrosion inhibitor (D) is at least one selected from the group consisting of 4,6-dimethyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, Benzotriazole, 4-methyl-1-hydrogen-benzotriazole, 5-methyl-1-hydrogen-benzotriazole, 4-methyl- Tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H-benzo [ Sol and at least one selected from the group consisting of 6-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole.
The resist stripper composition according to claim 7, wherein the corrosion inhibitor (D) is contained in an amount of 0.001 to 10 parts by weight based on 100 parts by weight of the total composition.
The resist stripper composition according to claim 1, further comprising (E) a polar solvent.
11. The resist stripper composition according to claim 10, wherein the (E) polar solvent is contained in an amount of 0.1 to 80 parts by weight based on 100 parts by weight of the total composition.
The resist stripping liquid composition according to any one of claims 1 to 11, which is used for resist stripping of a substrate on which a metal wiring including aluminum or copper is formed.
A method for peeling a resist, which comprises peeling off a remaining resist after an etching process of a substrate on which a conductive metal film is deposited, with the peeling liquid composition according to any one of claims 1 to 11.
A method of manufacturing an image display device including the resist stripping method of claim 13.

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