KR101880308B1 - A photoresist stripper composition for manufacturing of thin film transistor and method for manufacturing of thin film transistor using the same - Google Patents

Abstract

(A) a silanol compound; (b) an alkanolamine; (c) a water-soluble polar solvent excluding a polyhydric alcohol; And (d) a corrosion inhibitor. The present invention also relates to a photoresist stripper composition for manufacturing a TFT.
The present invention relates to a method of manufacturing a TFT, which comprises a step of peeling a photoresist with a photoresist stripper composition for manufacturing a TFT.

Description

[0001] The present invention relates to a resist stripping composition for TFT fabrication, and a method of manufacturing a TFT using the same, and a method of manufacturing a TFT using the resist stripping composition. BACKGROUND ART < RTI ID = 0.0 >

The present invention relates to a resist stripping liquid composition having excellent photoresist residue removal ability by dry / wet etching in pattern formation during manufacturing of a TFT (thin film transistor) during a manufacturing process of a flat panel display substrate, and a method of manufacturing a TFT using the same .

In recent years, efforts have been made to increase the number of pixels per unit area as the demand for high resolution implementation of flat panel displays increases. In accordance with this trend, reduction of the wiring width is required, and in order to cope with this, the dry etching process has been introduced, and the process conditions have become increasingly severe. In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required, and copper having a lower resistivity than aluminum is now being used as a wiring material. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing. Specifically, a considerable level of exfoliation characteristics is required for the removal power against etch residue generated after the dry etching process and the corrosion inhibiting ability against metal wiring. In particular, corrosion resistance to copper as well as aluminum is required, and in order to secure price competitiveness, economic efficiency such as increase in the number of processed substrates is also required.

In response to the needs of such industries, new technologies are being published. For example, Korean Patent Laid-open Publication No. 10-2009-0045859 discloses a polyimide stripping agent containing water, an alkali agent, an organic solvent, and a silane-based compound, and Korean Patent Publication No. 10-2009-0045860 discloses a polyimide stripper comprising water, an alkanolamine, Compounds and water-soluble organic solvents. However, the above-mentioned prior arts have a problem in that they do not have a phlegmatic force of Cu and TiW, have a problem of viscosity increase by addition to polyhydric alcohols, There is a problem of corrosion.

KR 2009-0045859 A KR 2009-0045860 A

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a flat panel display substrate, which is excellent in removing photoresist residue by dry / It is an object of the present invention to provide a photoresist stripper liquid composition for TFT fabrication which does not cause corrosion in aluminum, copper, tungsten, molybdenum, titanium, and metal wirings containing the silanol compound, which is excellent in dissolving power in ionized water and polar solvents.

In order to achieve the above object,

(A) a silanol compound; (b) an alkanolamine; (c) a water-soluble polar solvent excluding a polyhydric alcohol; And (d) a corrosion inhibitor. The present invention also provides a photoresist stripper composition for manufacturing a TFT.

The present invention provides a method of manufacturing a TFT using the photoresist stripper composition for manufacturing TFT.

The photoresist stripper composition for TFT fabrication according to the present invention is excellent in the ability to remove photoresist residues by dry / wet etching in the pattern formation in the manufacture of TFT (Thin Film Transistor), and has excellent solubility in deionized water and polar solvents It is possible to provide a photoresist stripper composition for TFT fabrication that does not cause corrosion in aluminum, copper, tungsten, molybdenum, titanium, and metal wiring including the same, by using the compound.

1 is a photograph of a Ti-W / Al substrate immersed in the photoresist stripper composition of Example 1 of the present invention.
2 is a photograph of a Ti-W / Al substrate immersed in the photoresist stripper composition of Comparative Example 1 of the present invention.

Hereinafter, a photoresist stripper composition for manufacturing a TFT according to the present invention will be described in detail.

A photoresist stripper composition for TFT fabrication according to the present invention comprises (a) a silanol compound; (b) an alkanolamine; (c) a water-soluble polar solvent excluding a polyhydric alcohol; And (d) a corrosion inhibitor.

(a) silanol compound

The silanol compound (a) used in the present invention is represented by the following general formula (1) wherein R 1, R 2 and R 3 each independently represents at least one hydroxyl group, and two or less hydrogen atoms or an alkylene group having 1 to 5 carbon atoms . R4 is an alkyl group having 1 to 5 carbon atoms, and R5 and R6 are each independently a hydrogen atom or an alkylene group having 1 to 5 carbon atoms.

[Chemical Formula 1]

Examples of the silanol compound (a) represented by the above formula (1) include (3-aminopropyl) (methyl) silanediol and (3-aminopropyl) silanetriol, Mix more than species

 (a) The silanol compound is excellent in the ability to prevent corrosion of metals that may occur during photoresist stripping, and particularly has excellent anticorrosion properties against aluminum, molybdenum, titanium, and tungsten and metal film containing them.

The amount of the silanol compound (a) represented by the formula (1) is preferably 0.01 wt% to 5 wt%, more preferably 0.05 wt% to 3 wt% with respect to the total weight of the composition. If the content of the silanol compound (a) used in the present invention is less than 0.01% by weight, corrosion may occur in aluminum, molybdenum, tungsten, titanium and metal wiring including the silanol compound in the rinsing process by peeling or deionized water, %, It is not economically correct because the corrosion inhibition effect can not be improved due to the increase of the content of the corrosion inhibitor, and the viscosity of the composition may be increased to reduce the convenience.

(b) alkanolamines

The alkanolamines (b) used in the present invention are amines having at least one hydroxyl group, such as choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2- aminoethanol, 2- (ethylamino) N-dimethylaminoethanol, N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1-ethanol, 1-amino- Amino-1-propanol, 4-amino-1-butanol, dibutanolamine, (methoxymethyl) diethanolamine, (hydroxyethyloxymethyl) diethyl Alkoxyamines such as amine, methyl (methoxymethyl) aminoethane, methyl (methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol and 2- (2-aminoethoxy) ethanol; (2-hydroxyethyl) piperazine, 1- (2-hydroxyethyl) methylpiperazine, N- (2-hydroxyethyl) These can be used singly or in combination of two or more species

The alkanolamines (b) strongly penetrate the polymer matrix of the photoresist, which is denatured or crosslinked under various process conditions such as dry or wet etching, ashing or ion implant processing, The photoresist is deformed into an amorphous polymer gel state by forming an empty space in a structurally weak part in the resist remaining on the substrate to break the bond existing between the photoresist and the photoresist, Can be easily removed.

The (b) alkanolamines are preferably contained in an amount of 1 to 40% by weight based on the total weight of the composition. (b) alkanolamines are more preferably contained in an amount of 1 to 20% by weight, and most preferably 3 to 15% by weight based on the total weight of the composition. When the photoresist stripper composition of the present invention is contained in the above amounts, the photoresist stripper composition of the present invention has a problem of insufficient photoresist stripping effect and a problem of a rapid increase in corrosion rate for aluminum, copper, tungsten, molybdenum, titanium, And exhibits favorable peeling properties.

(c) a water-soluble polar solvent excluding a polyhydric alcohol

Examples of the water-soluble polar solvent excluding the polyhydric alcohol (c) used in the present invention include a proton-polar solvent and an aprotic polar solvent, which may be used singly or in combination. Specific examples of the protonic polar solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, di Ethylene glycol monomethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene Glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and tetrahydroperfuryl alcohol. , And these one kinds may be used alone or in combinations of two or more.

Specific examples of the aprotic polar solvent include pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethylsulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; N, N-dimethylformamide, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylacetamide, N- (2 N-dimethylpropionamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, And amide compounds such as propionamide. These compounds may be used alone or in admixture of two or more.

The water-soluble polar solvent excluding the polyhydric alcohol (c) of the present invention dissolves the photoresist polymer gelled by the alkanolamines (b), and further, after rinsing the deionized water after the photoresist peeling, Thereby facilitating the removal of the peeling liquid and minimizing the re-adsorption / re-adhesion of the peeling liquid and the dissolved photoresist. In the case of using a polyhydric alcohol as the water-soluble polar solvent used in the present invention, the viscosity of the water-soluble polar solvent is increased and the convenience of the process is deteriorated by the increase of the viscosity. In addition, the content of the water-soluble polar solvent is relatively decreased, Deteriorating the buying performance.

The water-soluble polar solvent excluding the polyhydric alcohol (c) is preferably contained in an amount of 50 to 90% by weight based on the total weight of the composition. When it is contained in the above-mentioned content range, it is advantageous to exhibit the removal performance of photoresist polymer degraded or crosslinked by etching or the like, and at the same time, it is advantageous in the effect of increasing the number of treatments. If the content of the water-soluble polar solvent is less than 50% by weight, the solubility of the photoresist is lowered and the number of treatments is decreased, and a complete foreign body removing effect can not be obtained during the rinsing process with deionized water. If the content of the water-soluble polar solvent is more than 90% by weight, the content of the basic compound is excessively reduced, and the removability of the crosslinked or deteriorated photoresist is deteriorated.

(d) Corrosion inhibitor

Examples of the corrosion inhibitor (d) used in the present invention include benzotriazole, tolytriazole, methyltolytriazole, 2,2 '[[[benzotriazole] methyl] imino] bisethanol, 2,2' Benzyltriazol-1-yl] methyl] imino] bis-methanol, 2,2 '[[ Methyl] imino] bisethanol, 2,2 '[[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] ] Imino] biscarboxylic acid, 2,2 '[[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] 1-yl] methyl] imino] bis-ethanol, which may be used alone or in admixture of two or more.

The corrosion inhibitor (d) is excellent in the corrosion inhibiting ability of the metal wiring including aluminum and / or the metal wiring including copper, and particularly has excellent anticorrosive power against copper and metal containing it.

The corrosion inhibitor (d) is preferably contained in an amount of 0.01 to 5% by weight, more preferably 0.03 to 3% by weight based on the total weight of the composition. If the content of the corrosion inhibitor (d) used in the present invention is less than 0.01% by weight, corrosion may occur in the copper or the metal wiring including the corrosion inhibitor in the rinsing process by peeling or deionized water. When the corrosion inhibitor is added in an amount exceeding 5% It can not be obtained economically because the corrosion prevention effect can not be improved by the increase of the content.

(e) deionized water

The photoresist stripper composition for TFT fabrication of the present invention is a composition comprising (a) a silanol compound represented by the formula (1), (b) alkanolamines, (c) a water-soluble polar solvent from which a polyhydric alcohol is excluded, and (d) d) may further comprise deionized water. The deionized water (d) increases the rate of photoresist stripping by improving the activation of the alkanolamines (b) and the rate of stripping the photoresist. The deionized water is mixed with the aqueous polar solvent (c) The contaminants and the photoresist stripping liquid can be quickly and completely removed.

In case (e) deionized water is included, it is preferable that the deionized water contains 5% by weight to 40% by weight based on the total weight of the composition. If the amount is less than 5 wt%, the effect of improving the removal performance of the crosslinked or deteriorated photoresist can not be obtained by the dry / wet etching process as compared with the composition containing no deionized water. When the amount exceeds 40 wt%, the dissolution capacity of the photoresist is decreased The number of treatments is decreased, and when the substrate is immersed in the peeling liquid for a long time, corrosion of the metal wiring can be caused.

In the TFT manufacturing method including the step of peeling the photoresist with the photoresist stripper composition for TFT fabrication of the present invention, the dipping method is generally used as the method of peeling the photoresist, but other methods such as spraying You can also use the method. As the cleaning agent after treatment with the composition according to the present invention, it is not necessary to use an organic solvent such as alcohol, and it is sufficient to wash with water.

The photoresist stripper composition for TFT fabrication of the present invention can be usefully used in a photoresist residue removal process in pattern formation in the manufacture of thin film transistors (TFTs) during the manufacturing process of semiconductors or electronic products, particularly flat panel display substrates.

Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

Example

Example  1 to 9 and Comparative Example  1 to 8: TFT  For manufacturing Photoresist  Preparation of release agent composition

The components shown in the following Table 1 were mixed at the composition ratios to prepare the photoresist stripper compositions for TFT fabrication of Examples 1 to 9 and Comparative Examples 1 to 8.

division (a) silanol
compound (b)
Amines (c) Water solubility
Polar solvent (d) Corrosion
Inhibitor (e) deionized water [weight%] [weight%] [weight%] [weight%] [weight%] Example 1 APSO One MEA 10 NMP 50 BTA One BDG 38 Example 2 APSO One AEE 10 NMP 40 BTA One BDG 48 Example 3 APSO One MDEA 10 NMF 50 BTA One BDG 38 Example 4 APSO One MEA 10 DMSO 50 BTA One BDG 38 Example 5 APSO One MEA 10 NMP 50 BTA One MDG 38 Example 6 APSO One MEA 10 NMP 40 BTA One 20 BDG 28 Example 7 APSO One AEE 10 NMP 40 BTA One 10 BDG 38 Example 8 APSO 0.5 AEE 10 NMP 40 BTA One 10 BDG 38.5 Example 9 APSO 3 AEE 10 NMP 40 BTA One 10 BDG 36 Comparative Example 1 - - MEA 10 NMP 50 BTA One BDG 39 Comparative Example 2 - - MEA 10 NMP 40 BTA One 20 BDG 29 Comparative Example 3 APSO One MEA 10 NMP 50 - - BDG 39 Comparative Example 4 - - MEA 10 NMP 50 - - BDG 40 Comparative Example 5 APSO One - - NMP 60 BTA One BDG 38 Comparative Example 6 APSO One MEA 10 NMP 20 BTA One 50 BDG 18 Comparative Example 7 APSO One AEE 10 NMP 40 glycerin 10 10 BDG 38 Comparative Example 8 AEAPTMS One MEA 10 NMP 40 - - 20 BDG 29

week)

APSO: (3-aminopropyl) silanetriol

MEA: Monoethanolamine

AEE: 2- (2-aminoethylamino) -1-ethanol

MDEA: N-methyldiethanolamine

NMP: N-methylpyrrolidone

BDG: diethylene glycol monobutyl ether

MDG: diethylene glycol monomethyl ether

NMF: N-methylformamide

DMSO: dimethylsulfoxide

BTA: benzotriazole

AEAPTMS: r- (2-aminoethyl) aminopropyltrimethoxysilane

Experimental Example : TFT  For manufacturing Photoresist  Evaluation of the properties of the release agent composition

One) TFT  For manufacturing Photoresist  Of the release agent composition Peel force  evaluation

Photoresist (DWG-520: Dongwoo Fine-Chem Co., Ltd.) was coated on a glass substrate with a constant thickness (2 탆) according to a conventional method in order to confirm the peeling effect of the composition for peeling the photoresist and cured at 170 캜 for 10 minutes Respectively. A composition for peeling photoresist as in the above Examples and Comparative Examples was prepared and maintained at a constant temperature of 50 캜. Then, a 3 cm x 3 cm glass substrate coated with a photoresist was immersed in the glass substrate to evaluate the peeling force. The substrate was cleaned with pure water for 1 minute in order to remove the remnant peeling liquid. After the cleaning, the substrate was completely dried with nitrogen to remove the pure water remaining on the substrate. The time was evaluated by the same method as described above to measure the time for completely removing the photoresist.

The film forming performance of the cured photoresist of the substrate is shown in Table 2 below with the naked eye observation.

2) TFT  For manufacturing Photoresist  Metallic wiring of the stripper composition Revolution  evaluation

In order to evaluate the anticorrosive ability of the photoresist stripper solution composition against the metal wiring, Mo / Al, Cu / Ti and Ti-W / Al layers were formed on the glass substrate by a thin film sputtering method A pattern was formed using a photoresist, and then a metal film was etched by a wet etching method and a dry etching method, respectively. Mo / Al, Cu / Ti and Ti-W / Al wirings was exposed to the substrate. The stripping solution composition was kept at a constant temperature of 50 캜 and the substrate was immersed for 30 minutes, And evaluated using a microscope (SEM, Hitachi S-4700). The results are shown in Table 2 below. Excellent results are shown as " good ", good results are shown as "?&Quot;

3) TFT  For manufacturing Photoresist  Evaluation of the number of treatments of the release agent composition

One of the methods for expressing the performance of a photoresist peeling liquid is referred to as treatment number / treatment capacity evaluation, in order to determine how much of the substrate on which the photoresist has been applied can be peeled off. When the substrate on which a predetermined number of photoresist is applied is processed, the content of the dissolved photoresist is calculated and optionally dissolved in the photoresist stripper solution composition, and the removability of the residue and foreign matter on the substrate is confirmed. The higher the photoresist concentration, the higher the number of peeling liquids to be treated if the residue and foreign matter can not be observed.

To evaluate the number of substrates processed in the photoresist stripper solution composition, 1 to 5 wt% of a solidified photoresist (photoresist solidified by heat treatment at 130 캜 for one day by removing all of the solvent) was sequentially dissolved in the stripper solution composition After the photoresist pattern was formed, the Mo / Al, Cu / Ti, and Ti-W / Al wiring substrates, in which the metal film was etched by wet etching and dry etching, were immersed in the stripping solution composition at 50 캜 for 10 minutes, (SEM, Hitach S-4700), and the degree of residue and foreign matter removal was confirmed. The results are shown in Table 2 below. Excellent results are shown as " good ", good results are shown as "? &Quot;

division Exfoliation
time
(sec) Revolution Processing performance
(Solidified photoresist concentration) Al Cu Ti-W One% 2% 3% 4% 5% Example 1 60 ◎ ◎ ◎ ◎ ◎ ◎ ○ △ Example 2 60 ◎ ◎ ◎ ◎ ◎ ◎ ○ △ Example 3 70 ◎ ◎ ◎ ◎ ◎ ◎ △ △ Example 4 60 ◎ ◎ ◎ ◎ ◎ ◎ ○ ○ Example 5 60 ◎ ◎ ◎ ◎ ◎ ◎ ○ ○ Example 6 50 ◎ ◎ ◎ ◎ ◎ ◎ ○ ○ Example 7 50 ◎ ◎ ◎ ◎ ◎ ◎ ○ ○ Example 8 50 ◎ ◎ ◎ ◎ ◎ ◎ ○ ○ Example 9 50 ◎ ◎ ◎ ◎ ◎ ◎ ○ ○ Comparative Example 1 60 × ◎ × ◎ ◎ ◎ ○ △ Comparative Example 2 50 × ◎ × ◎ ◎ ◎ ○ ○ Comparative Example 3 60 ◎ × ◎ ◎ ◎ ◎ ○ △ Comparative Example 4 60 × × × ◎ ◎ ◎ ○ △ Comparative Example 5 Not removed ◎ ◎ ◎ × × × × × Comparative Example 6 600 △ ○ ◎ ○ △ × × × Comparative Example 7 80 ◎ × × ◎ △ △ × × Comparative Example 8 80 △ × × ◎ ◎ ◎ ○ ○

4) TFT  For manufacturing Photoresist  Evaluation of ease of use of release agent composition

In applying the photoresist stripper solution composition, a spray method is generally applied, so that a photoresist stripper solution composition having a low viscosity is suitable for convenience of operation. For evaluation, the viscosity of Example 7 and Comparative Example 7 was measured at 25 캜 using a rotary viscometer (product name: TV-30). As a result, a value of 5.12 mPas was obtained in Example 7, and a value of 15.53 mPas was obtained in Comparative Example 7.

From the test results of Table 2, the compositions of Examples 1 to 9, which are the photoresist stripper compositions of the present invention, are excellent in peel strength and have a high strength of Al, Cu and Ti-W It was confirmed that not only the damping force was better but also the evaluation of the number of processed / treated capacities was superior.

1 and 2, it was found that the degree of residue and foreign matter removal of Example 1 was superior to that of Comparative Example 1. [

Claims (13)

(a) a silanol compound;
(b) an alkanolamine;
(c) a water-soluble polar solvent excluding a polyhydric alcohol; And
(d) a corrosion inhibitor,
Wherein the silanol compound (a) is represented by the following formula (1).
[Chemical Formula 1]

(Wherein R ₁ , R ₂ and R ₃ each independently represents at least one hydroxyl group, and may contain two or less hydrogen atoms or an alkyl group having 1 to 5 carbon atoms), R ₄ represents a carbon number And R ₅ and R ₆ are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. The method according to claim 1,
(e) deionized water. < RTI ID = 0.0 > 8. < / RTI > The method according to claim 1,
(a) 0.01 to 5% by weight of a silanol compound;
(b) 1 to 40% by weight of an alkanolamine;
(c) 50 to 90% by weight of a water-soluble polar solvent excluding polyhydric alcohol; And
(d) 0.01 to 5% by weight of a corrosion inhibitor. 3. The method of claim 2,
And (e) 5 to 40% by weight of deionized water is contained in the photoresist stripper composition. delete The method according to claim 1,
Wherein the silanol compound (a) is any one of (3-aminopropyl) (methyl) silanediol and (3-aminopropyl) silanetriol or a mixture thereof. 5. The method according to any one of claims 1 to 4,
The (b) alkanolamine may be selected from the group consisting of choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- Amino-2-propanol, 2-amino-1-propanol, 2-amino-1-propanol, (Methoxymethyl) aminoethane, methyl (methoxymethyl) aminoethane, methyl (methoxymethyl) aminoethane, (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol, 1- (2-hydroxyethyl) piperazine, 1- (2-hydroxyethyl) morpholine, and N- (3-hydroxypropyl) morpholine. A photoresist stripper composition for TFT manufacture. 5. The method according to any one of claims 1 to 4,
Wherein the water-soluble polar solvent from which the polyhydric alcohol (c) is excluded is any one of a protonic polar solvent and an aprotic polar solvent or a mixture thereof. 9. The method of claim 8,
Wherein the protonic polar solvent is selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisoprene Propylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether , Propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate and tetrahydroperfuryl alcohol. TFT for producing a photoresist stripping agent composition, characterized in that a slow or a mixture of two or more. 9. The method of claim 8,
The aprotic polar solvent may be selected from the group consisting of N-methylpyrrolidone (NMP), N-ethylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, (DMSO), sulfolane, triethylphosphate, tributylphosphate, dimethyl carbonate, ethylene carbonate, formamide, N-methylformamide, N, Amide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3- methoxy-N, N-dimethylpropionamide, 3- ) -N, N-dimethylpropionamide, and 3-butoxy-N, N-dimethylpropionamide. 5. The method according to any one of claims 1 to 4,
(D) the corrosion inhibitor is selected from the group consisting of benzotriazole, tolythriazole, methyltolytriazole, 2,2 '[[[benzotriazole] methyl] imino] bisethanol, 2,2' [[ 1-yl] methyl] imino] bis-methanol, 2,2 '[[ethyl-1-hydrogen benzotriazol- Methyl] imino] bisethanol, 2,2 '[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] Benzyltriazol-1-yl] methyl] imino] bismethylamine, 2,2 '[[[amine-1-hydrogen-benzotriazol- ] Methyl] imino]. ≪ / RTI > A manufacturing method of a TFT, comprising a step of peeling a photoresist by a photoresist stripper composition for manufacturing a TFT according to any one of claims 1 to 4. A TFT manufactured by the manufacturing method of claim 12.

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