TWI705969B - A resist stripper composition, method for manufacturing a display device using the same and display device thereby - Google Patents

Abstract

The present invention provides a resist stripping liquid composition, a display substrate and a method for manufacturing the same, the resist stripping liquid composition being characterized by comprising (a) an aminoalkylsilane-based compound having a structure of the following chemical formula 1 , (B) Alkanolamine, and (c) Polar organic solvent. In the following chemical formula 1, R ₁ , R ₂ and R ₃ are each independently an alkyl group having 1 to 4 carbon atoms, R ₄ is an alkylene group having 1 to 5 carbon atoms, and R ₅ and R ₆ are each independently The ground is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a hydroxyl group or an alkoxy group having 1 to 4 carbon atoms, and when R ₅ is a hydroxyl group or an alkoxy group, R ₆ is a hydrogen atom or an alkyl group, When R ₆ is a hydroxyl group or an alkoxy group, R ₅ is a hydrogen atom or an alkyl group. [Chemical formula 1]

Description

Resist stripper composition, display substrate and manufacturing method thereof

Invention field

The present invention relates to a resist stripper composition using an aminoalkylsilane-based compound having excellent galvanic resistance and crevice corrosion resistance, a method for manufacturing a display substrate manufactured using the same, and a display substrate manufactured therefrom.

Background of the invention

In recent years, as the demand for high-resolution presentation of display substrates has increased, efforts have continued to increase the number of pixels per unit area. According to such trends, a reduction in wiring width is required. To cope with this, process conditions such as the introduction of a dry etching process have also become more and more severe. In addition, due to the increase in the size of the flat panel display device, the signal speed in the wiring is also required to be accelerated. Therefore, copper, which has a lower resistivity than aluminum, is used as the wiring material. Affected by this, the required performance for the stripping liquid used in the stripping step as the resist removal step also increases. Specifically, a relatively high level of peeling characteristics is required for corrosion inhibiting power against metal wiring. In particular, in addition to aluminum, corrosion inhibition capability against copper is also required. In order to ensure price competitiveness, economic efficiency such as an increase in the number of processed substrates is also required. In response to the needs of the industry as described above, new technologies have been disclosed.

For example, Korean Registered Patent No. 10-1557778 discloses a resist stripper composition containing an alkanolamine, an organic solvent, etc., but it does not improve the corrosion resistance against the lower metal film or metal wiring containing metals such as molybdenum. Prior art literature Patent literature

Patent Document 1: Korean Registered Patent No. 10-1557778

SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED The present invention is an invention for solving the above-mentioned problems, and its object is to provide a resist stripping solution that has excellent corrosion resistance against a lower metal film or metal wiring containing molybdenum and exhibits a high peeling force The composition uses a method for manufacturing a display substrate manufactured therefrom, and a display substrate manufactured therefrom. The way to solve the problem

In order to achieve the above-mentioned object, the present invention provides a resist stripping liquid composition characterized by comprising: (a) an aminoalkylsilane-based compound having a structure of the following chemical formula 1, (b) an alkanolamine, and (c) Polar organic solvent, but does not contain ammonium hydroxide.

The present invention provides a method of manufacturing a display substrate, which includes a step of cleaning the display substrate using the above-mentioned resist stripping liquid composition.

In addition, the present invention provides a display substrate manufactured by the above manufacturing method. Invention effect

The resist stripping liquid composition of the present invention uses an amino alkyl silane-based compound having excellent solubility in deionized water and polar solvents, and therefore does not cause lower metals containing aluminum, copper, tungsten, molybdenum, titanium, and niobium The film or metal wiring corrodes and has the effect of expressing high peeling force.

BEST MODE FOR CARRYING OUT THE INVENTION The present invention relates to a resist stripper composition, a method for manufacturing a display substrate manufactured using the composition, and a display substrate manufactured by the method.

The resist stripping liquid composition of the present invention is characterized in that it contains (a) an aminoalkyl silane-based compound, (b) an alkanolamine, and (c) a polar organic solvent, and does not contain ammonium hydroxide, especially because The use of amino alkyl silane compounds with excellent solubility in deionized water and polar solvents will not corrode aluminum, copper, tungsten, molybdenum, titanium and the underlying metal film or metal wiring containing them, and has high performance The effect of peeling force. The resist stripper composition of the present invention may further contain (d) an anticorrosive agent.

Hereinafter, the content of the present invention will be explained in detail according to the structure. (a) Amino alkyl silane compounds

The (a) aminoalkylsilane-based compound used in the present invention has a structure of the following chemical formula 1. [Chemical formula 1]

In the above chemical formula 1, R1, R2 and R3 are each independently an alkyl group having 1 to 4 carbon atoms, R4 is an alkylene group having 1 to 5 carbon atoms, and R5 and R6 are each independently a hydrogen atom and a carbon atom number. An alkyl group of 1 to 5, a hydroxyl group or an alkoxy group of 1 to 4 carbon atoms. When R5 is a hydroxy or alkoxy group, R6 is a hydrogen atom or an alkyl group, and when R6 is a hydroxy or alkoxy group Below, R5 is a hydrogen atom or an alkyl group.

The alkyl group having 1 to 4 carbon atoms may be linear or branched when it has 3 or more carbon atoms.

As the type of (a) aminoalkylsilane-based compound represented by Chemical Formula 1, preferably (2-aminoethyl)triethoxysilane, (3-aminopropyl)trimethoxysilane, (3-Aminopropyl)triethoxysilane, etc., can be used alone or in combination of two or more.

Furthermore, in the present invention, a compound such as (3-aminopropyl)silanetriol may be further added to the above-mentioned (a) aminoalkylsilane-based compound for use.

The (a) aminoalkylsilane-based compound of the present invention is excellent in preventing the corrosion of metals that may occur during resist stripping, especially by Experiments confirmed that galvanic corrosion and crevice corrosion that occur in alloys containing aluminum, molybdenum, and copper and molybdenum have excellent corrosion resistance.

Relative to the total weight of the composition, the content of the (a) aminoalkylsilane-based compound represented by the above chemical formula 1 is preferably 0.001% by weight to 3.0% by weight, more preferably 0.005% by weight to 1.0% by weight. If it is less than 0.001% by weight, metal wiring may be corroded during the peeling or rinsing process with deionized water, and if it exceeds 3.0% by weight, the increase in the corrosion prevention effect due to the increase in the corrosion inhibitor content cannot be obtained. Therefore, the economy is not good.

(b) Alkanolamine

The alkanolamine of the present invention plays the following role: Under various process conditions such as dry or wet etching, ashing or ion implant processing, it effectively penetrates the modified or crosslinked resistance In the polymer matrix of the resist, it breaks the bonds existing in or between molecules. In addition, voids are formed in the structurally fragile parts of the resist remaining on the substrate, and the resist is modified into an amorphous polymer gel (gel) mass state, so that the resist attached to the upper part of the substrate can be modified. The etching agent is easily removed.

The alkanolamines can include monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2-(ethylamino)ethanol, 2-(methylamino)ethanol, N-methyl Diethanolamine, N,N-dimethylethanolamine, N,N-diethylaminoethanol, 2-(2-aminoethylamino)-1-ethanol, 1-amino-2-propanol , 2-amino-1-propanol, 3-amino-1-propanol, 4-amino-1-butanol, dibutanolamine, (methoxymethyl)diethanolamine, (hydroxyethyl (Oxymethyl)diethylamine, methyl(methoxymethyl)aminoethanol, methyl(butoxymethyl)aminoethanol, 2-(2-aminoethoxy)ethanol, 1 -(2-hydroxyethyl)piperazine, 1-(2-hydroxyethyl)methylpiperazine, N-(2-hydroxyethyl)morpholine, N-(3-hydroxypropyl)morpholine, etc., These can be used alone or in combination of two or more. However, the present invention may not contain ammonium hydroxide. In the case of containing ammonium hydroxide, the film quality of Mo or Mo alloy may be attacked, and it is particularly preferable not to contain tetramethylammonium hydroxide.

The content of the (b) alkanolamine of the present invention is preferably 0.1 to 20.0% by weight, and more preferably 0.5 to 10.0% by weight relative to the total weight of the entire composition. If it is less than 0.1% by weight, the resist removal force may decrease, and if it exceeds 20.0% by weight, the effect of improving the resist removal force due to the increase in the alkanolamine content may not be obtained, which is uneconomical, and may cause Aiming at the problem of increased corrosion level of metal film quality. (c) Polar organic solvent

The (c) polar organic solvent used in the present invention includes a protic polar solvent and an aprotic polar solvent, and these can be used alone or in combination of two or more. As preferred examples of the above-mentioned protic polar solvents, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene two Alcohol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether Ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol, polypropylene glycol, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether Alkylene glycol monoalkyl ether such as dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate and tetrahydrofurfuryl alcohol, etc., they can be singly or in combination use.

Preferable examples of the aforementioned aprotic polar solvents include pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone; 1,3-dimethyl-2-imidazolidinone, 1,3 -Dipropyl-2-imidazolidinone and other imidazolidinone compounds; γ-butyrolactone and other lactone compounds; dimethyl sulfide (DMSO), cyclobutane and other sulfide compounds; triethyl phosphate, triphosphate Phosphate compounds such as butyl ester; Carbonate compounds such as dimethyl carbonate and ethylene carbonate; Formamide, N-methylformamide, N-ethylformamide, N,N-dimethylformamide Amine, N,N-diethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-(2-hydroxyethyl)acetamide, N , N-dimethylpropanamide, 3-methoxy-N,N-dimethylpropanamide, 3-(2-ethylhexyloxy)-N,N-dimethylpropanamide, Amine compounds such as 3-butoxy-N,N-dimethylpropanamide can be used alone or in combination of two or more.

The above (c) polar organic solvent plays the role of dissolving the gelled resist polymer, and in addition, in the process of rinsing with deionized water after the resist is stripped, the stripping solution with water is removed smoothly, thereby making the stripping Resorption/reattachment of liquid and dissolved resist is minimized. In order to have an appropriate peeling force, it is preferable that the boiling point of the polar organic solvent (c) is neither too high nor too low, and can be used in combination. The above-mentioned polar organic solvent can be added according to the additional required performance in the peeling process.

Relative to the total weight of the entire composition, the content of the aforementioned (c) polar organic solvent is appropriately 75.0 to 99.8% by weight. If it is less than 75.0% by weight, the dissolving power may decrease, and the resist may be re-adsorbed/re-adhered during the rinsing process with deionized water. In addition, if it exceeds 99.8% by weight, the content of (b) alkanolamine is relatively reduced and the peeling force may be reduced. (d) Anti-corrosion agent

The composition of the present invention may further include (d) an anticorrosion agent. Specifically, the anticorrosion agent of the present invention may include monocarboxylic acids such as formic acid, acetic acid, and propionic acid; oxalic acid, malonic acid, succinic acid, and glutaric acid. Dicarboxylic acids such as diacid, adipic acid, pimelic acid, maleic acid, fumaric acid, and glutaconic acid; tricarboxylic acids such as trimellitic acid and tricarboxylic acid; glycolic acid, lactic acid , Salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and hydroxy carboxylic acid; amide succinate, amide malate, amide maleate, amide fumarate, Oxalamide, malonate, glutarate, amide acetate, amide lactate, citrate, amide tartrate, amide gluconate, amide formate Esters and uric acid amide esters and other organic acid amide esters; benzotriazole, tolyltriazole, tolyltriazole, 2,2'-[[[benzotriazole]methyl]imino ]Diethanol, 2,2'-[[[Methyl-1hydro-benzotriazol-1-yl]methyl]imino]bismethanol, 2,2'-[[[ethyl-1hydro -Benzotriazol-1-yl]methyl]imino]diethanol, 2,2'-[[[Methyl-1hydro-benzotriazol-1-yl]methyl]imino] Diethanol, 2,2'-[[[methyl-1hydro-benzotriazol-1-yl]methyl]imino] dicarboxylic acid, 2,2'-[[[methyl-1hydro -Benzotriazol-1-yl]methyl]imino]bismethylamine and 2,2'-[[[amine-1hydro-benzotriazol-1-yl]methyl]imino] Diethanol, 4-methyl-1-hydro-benzotriazole, 6-methyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, 4-methyl Group-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, 5-methyl-4,5,6,7-tetrahydro-1H-benzo[1, 2,3]triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, 4,6-dimethyl-4, Azole compounds such as 5,6,7-tetrahydro-1H-benzo[1,2,3]triazole and 5-methyl-1-hydro-benzotriazole; 2,6-dimethyl Phenol, 2,4,6-trimethylphenol, 2,6-diethylphenol, 2,6-diethyl-4-methylphenol, 2,6-dipropylphenol, 2,6-di Symmetry such as propyl-4-methylphenol, 2,6-di-tert-butylphenol, 2,4,6-tri-tert-butylphenol and 2,6-di-tert-butyl-4-methylphenol Type phenolic compound; etc., but not limited to this. These can be used alone or in combination of two or more.

The content of the (d) anticorrosive agent of the present invention may be 0.001 to 1.0% by weight relative to the total weight of the composition. When the content of the anti-corrosion agent is less than 0.001% by weight, there is a problem of micro-corrosion on the copper surface, and when the content exceeds 1.0% by weight, the anti-corrosion effect due to the increase in the content cannot be obtained, which is uneconomical.

The resist stripper composition of the present invention can be effectively used in the removal process of semiconductors or electronic products, particularly resists for displays.

That is, the present invention includes a method of manufacturing a display substrate and a display substrate manufactured by the above-mentioned manufacturing method. The method of manufacturing the display substrate includes a step of cleaning the display substrate with the resist stripping liquid composition of the present invention.

Hereinafter, the present invention will be explained in more detail through examples. However, the following examples are only for explaining the present invention more specifically, and the scope of the present invention is not limited by the following examples. The following embodiments can be reasonably modified and changed by those skilled in the art within the scope of the present invention. <Examples and Comparative Examples> Production of resist stripper composition

The components described in the following Table 1 were mixed at corresponding mixing ratios to produce resist stripping liquid compositions of Examples and Comparative Examples. [Table 1]

Note) APTES: (3-aminopropyl)triethoxysilane APSTO: (3-aminopropyl)silanetriol AEE: 2-(2-aminoethoxy)-1-ethanol MAE: 2 -(Methylamino)ethanol MDEA: N-methyldiethanolamine IME: Imidazolidine ethanol NMF: N-methylformamide NEF: N-ethylformamide NMP: N-methylpyrrolidone MDG: diethyl Glycol monomethyl ether EDG: Diethylene glycol monoethyl ether BDG: Diethylene glycol monobutyl ether MTG: Triethylene glycol monomethyl ether TTA: Tolyltriazole MTBT: 6-methyl-4 ,5,6,7-Tetrahydro-1H-benzo[1,2,3]triazole TMAH(25): Tetramethylammonium hydroxide solution (25 wt.% in H ₂ O) <Experimental example 1> Evaluation of photoresist stripping force of stripping solution

In order to confirm the peeling effect of the resist stripper composition, a 1.7μm positive photoresist (DWG-520: our company’s PR) was coated on a glass substrate, and then placed on a hot plate at 170°C The substrate was prepared by performing hard bake for 10 minutes. After keeping the temperature of the resist stripping liquid composition constant at 50°C, the substrate was immersed at an interval of 30 seconds to evaluate the peeling force. After that, in order to remove the peeling liquid remaining on the substrate, cleaning was performed with deionized water (DIW; Deilonized water) for 1 minute. In order to remove the DIW remaining on the substrate after cleaning, the substrate was completely dried with nitrogen. The evaluated substrate was visually confirmed, and the time until the resist was completely removed was measured, and the results are shown in Table 2 below. It can be considered that the shorter the time, the better the peeling effect. <Experimental example 2> Evaluation of anti-corrosion power of stripping liquid metal

In order to evaluate the corrosion prevention ability of the resist stripping solution composition for metal wiring, according to a common method, a thin film sputtering method was used to form Mo/Al and Cu/X layers (X: Ti, Mo, MoTi, MoW, MoNb). After that, a photoresist pattern is formed, and a substrate on which the metal film is etched is prepared separately by a wet etching method. Using a simple strip spray evaluation equipment, the stripping liquid composition was maintained at a constant temperature of 60°C, and the above-mentioned substrate was sprayed and peeled at a pressure of 2kgf/cm ² for 2 minutes, and then a simple DIW cleaning spray equipment was used to remove the above-mentioned completed The substrate was spray-cleaned for 3 minutes at a pressure of 2 kgf/cm ² at room temperature. Regarding the cleaned substrate, drying was performed using N ² and the steps of realizing DIW cleaning and drying in the above-mentioned peeling step were repeated three times, and the substrate was evaluated with an electron microscope (SEM, Hitachi S-4700). The results are shown in Table 2 below. According to the degree of corrosion of each metal, when no corrosion is observed, it is expressed as ◎, when a little corrosion is observed but there is no problem when applied to film quality applications, it is expressed as ○, when corrosion is observed and When it is applied to the film quality, it is indicated as △, when serious corrosion is observed and cannot be applied to the film quality, it is indicated as ×.

[Table 2]

With reference to the above experimental results, it can be confirmed that since the resist stripping liquid composition of the present invention uses an aminoalkylsilane-based compound having excellent solubility in deionized water and polar solvents, it does not cause aluminum, copper, tungsten, Molybdenum, titanium, and metal wiring containing them corrode, and have a high peeling force effect. In addition, it was confirmed that in the cases of Comparative Examples 7 and 8 containing ammonium hydroxide, that is, tetramethylammonium hydroxide, the film quality of Mo or Mo alloy was attacked and severe corrosion occurred.

(no)

Claims (13)

A resist stripper composition, characterized by comprising: (a) an aminoalkyl silane-based compound having the structure of the following chemical formula 1, (b) alkanolamine, and (c) a polar organic solvent, wherein , The resist stripper composition does not contain water,

In the chemical formula 1, R1, R2, and R3 are each independently an alkyl group having 1 to 4 carbon atoms, R4 is an alkylene group having 1 to 5 carbon atoms, and R5 and R6 are each independently a hydrogen atom, carbon An alkyl group with 1 to 5 atoms, a hydroxyl group or an alkoxy group with 1 to 4 carbon atoms. When R5 is a hydroxyl group or an alkoxy group, R6 is a hydrogen atom or an alkyl group, and R6 is a hydroxyl group or an alkoxy group. In the case of R5 is a hydrogen atom or an alkyl group. The resist stripping liquid composition according to claim 1, which further contains (d) an anticorrosive agent. The resist stripping liquid composition according to claim 2, wherein the (d) corrosion inhibitor is a Cu corrosion inhibitor. The resist stripping liquid composition according to claim 1, wherein the (a) aminoalkylsilane-based compound is (2-aminoethyl)triethoxysilane, (3-aminopropyl) One or more of (3-aminopropyl)trimethoxysilane and (3-aminopropyl)triethoxysilane. The resist stripper composition according to any one of claims 1 to 4, wherein the (b) alkanolamine is monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-amino group Ethanol, 2-(ethylamino)ethanol, 2-(methylamino)ethanol, N-methyldiethanolamine, N,N-dimethylethanolamine, N,N-diethylaminoethanol, 2 -(2-Aminoethylamino)-1-ethanol, 1-amino-2-propanol, 2-amino-1-propanol, 3-amino-1-propanol, 4-amino -1-butanol, dibutanolamine, (methoxymethyl)diethanolamine, (hydroxyethyloxymethyl)diethylamine, methyl(methoxymethyl)aminoethanol, methyl (Butoxymethyl)aminoethanol, 2-(2-aminoethoxy)ethanol, 1-(2-hydroxyethyl)azine, 1-(2-hydroxyethyl)methylazine, N- One or more of (2-hydroxyethyl)morpholine and N-(3-hydroxypropyl)morpholine. The resist stripping liquid composition according to any one of claims 1 to 4, wherein the (c) polar organic solvent is one or more of a protic polar solvent and an aprotic polar solvent. The resist stripper composition according to claim 6, wherein the protic polar solvent is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethyl acetate Glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, two Ethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol mono One or more of methyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and tetrahydrofurfuryl alcohol. The resist stripping liquid composition according to claim 6, wherein the aprotic polar solvent is N-methylpyrrolidone, N-ethylpyrrolidone, 1,3-dimethyl-2-imidazolidinone , 1,3-Dipropyl-2-imidazolidinone, γ-butyrolactone, dimethyl sulfide, cyclobutane, triethyl phosphate, tributyl phosphate, dimethyl carbonate, ethylene carbonate , Formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, N-( 2-hydroxyethyl)acetamide, 3-methoxy-N,N-dimethylpropanamide, 3-(2-ethylhexyloxy)-N,N-dimethylpropanamide and One or more types of 3-butoxy-N,N-dimethylpropanamide. The resist stripping liquid composition according to claim 2, wherein (d) the corrosion inhibitor is formic acid, acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, and pimelic acid , Maleic acid, Fumaric acid, Glutaronic acid, Trimellitic acid, Tricarboxylic acid, Glycolic acid, Lactic acid, Salicylic acid, Malic acid, Tartaric acid, Citric acid, Gluconic acid, Hydroxycarboxylic acid, Succinic acid Amide, Amide Malate, Amide Maleate, Amide Fumarate, Amide Oxalate, Amide Malonate, Amide Glutarate, Amide Acetate, Lactic Acid Amide, Amide Citrate, Amide Tartrate, Amide Gluconate, Amide Formate, Amide Uric Acid, Benzotriazole, Tolyltriazole, Tolyltriazole, 2 ,2'-[[[[benzotriazole]methyl]imino]diethanol, 2,2'-[[[[Methyl-1hydro-benzotriazol-1-yl]methyl]imino] bismethanol, 2,2'-[[[ethyl-1hydro-benzotri Azol-1-yl]methyl]imino]diethanol, 2,2'-[[[methyl-1hydro-benzotriazol-1-yl]methyl]imino]diethanol, 2 ,2'-[[[Methyl-1hydro-benzotriazol-1-yl]methyl]imino] dicarboxylic acid, 2,2'-[[[methyl-1hydro-benzotri Azol-1-yl]methyl]imino]bismethylamine, 2,2'-[[[amine-1hydro-benzotriazol-1-yl]methyl]imino]diethanol, 4 -Methyl-1-hydro-benzotriazole, 6-methyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, 4-methyl-4, 5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, 5-methyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3] Triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, 4,6-dimethyl-4,5,6, 7-tetrahydro-1H-benzo[1,2,3]triazole, 5-methyl-1-hydro-benzotriazole, 2,6-dimethylphenol, 2,4,6-trimethyl Phenol, 2,6-diethylphenol, 2,6-diethyl-4-methylphenol, 2,6-dipropylphenol, 2,6-dipropyl-4-methylphenol, 2 One or more of ,6-di-tert-butylphenol, 2,4,6-tri-tert-butylphenol, and 2,6-di-tert-butyl-4-methylphenol. The resist stripping liquid composition according to claim 1, relative to the total weight of the composition, comprising: (a) 0.001 to 3.0% by weight of aminoalkylsilane-based compound, and (b) 0.1 to 20.0 of alkanolamine compound % By weight, and (c) 75.0-99.8% by weight of polar organic solvent. The resist stripping liquid composition according to claim 10, which further contains (d) an anticorrosive agent in an amount of 0.001 to 1.0% by weight. A method for manufacturing a display substrate, comprising cleaning with the resist stripper composition according to any one of claims 1 to 11 The process of the display substrate. A display substrate manufactured by the manufacturing method described in claim 12.