KR20180004609A - A resist stripper composition, method for manufacturing a display device and display device - Google Patents
A resist stripper composition, method for manufacturing a display device and display device Download PDFInfo
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- KR20180004609A KR20180004609A KR1020160084402A KR20160084402A KR20180004609A KR 20180004609 A KR20180004609 A KR 20180004609A KR 1020160084402 A KR1020160084402 A KR 1020160084402A KR 20160084402 A KR20160084402 A KR 20160084402A KR 20180004609 A KR20180004609 A KR 20180004609A
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- KR
- South Korea
- Prior art keywords
- acid
- methyl
- amide esters
- ether
- group
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005260 corrosion Methods 0.000 claims abstract description 30
- 230000007797 corrosion Effects 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 239000003495 polar organic solvent Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 14
- 239000003112 inhibitor Substances 0.000 claims description 13
- 239000002798 polar solvent Substances 0.000 claims description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- -1 monopropanolamine Chemical compound 0.000 claims description 10
- ZYPJGOCQEPYWIE-UHFFFAOYSA-N 4-amino-2,3-dihydroxy-4-oxobutanoic acid Chemical class NC(=O)C(O)C(O)C(O)=O ZYPJGOCQEPYWIE-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 6
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- 239000002253 acid Substances 0.000 claims description 5
- 239000012964 benzotriazole Substances 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 4
- PFEFOYRSMXVNEL-UHFFFAOYSA-N 2,4,6-tritert-butylphenol Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 PFEFOYRSMXVNEL-UHFFFAOYSA-N 0.000 claims description 4
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- FSQQTNAZHBEJLS-UPHRSURJSA-N maleamic acid Chemical class NC(=O)\C=C/C(O)=O FSQQTNAZHBEJLS-UPHRSURJSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
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- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Chemical class CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 4
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- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
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- NSQYXCMVSMXQRN-UHFFFAOYSA-N 5-methyl-4,5,6,7-tetrahydro-2h-benzotriazole Chemical compound C1C(C)CCC2=NNN=C21 NSQYXCMVSMXQRN-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
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- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
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- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims description 2
- FSQQTNAZHBEJLS-OWOJBTEDSA-N (e)-4-amino-4-oxobut-2-enoic acid Chemical class NC(=O)\C=C\C(O)=O FSQQTNAZHBEJLS-OWOJBTEDSA-N 0.000 claims description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
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- DKCPKDPYUFEZCP-UHFFFAOYSA-N 2,6-di-tert-butylphenol Chemical compound CC(C)(C)C1=CC=CC(C(C)(C)C)=C1O DKCPKDPYUFEZCP-UHFFFAOYSA-N 0.000 claims description 2
- HFVTUNMAGWBDGI-UHFFFAOYSA-N 2,6-diethyl-4-methylphenol Chemical compound CCC1=CC(C)=CC(CC)=C1O HFVTUNMAGWBDGI-UHFFFAOYSA-N 0.000 claims description 2
- METWAQRCMRWDAW-UHFFFAOYSA-N 2,6-diethylphenol Chemical compound CCC1=CC=CC(CC)=C1O METWAQRCMRWDAW-UHFFFAOYSA-N 0.000 claims description 2
- YINZGXSSYYFXEY-UHFFFAOYSA-N 2-(diethylaminomethoxy)ethanol Chemical compound CCN(CC)COCCO YINZGXSSYYFXEY-UHFFFAOYSA-N 0.000 claims description 2
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 2
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- BHWUCEATHBXPOV-UHFFFAOYSA-N 2-triethoxysilylethanamine Chemical compound CCO[Si](CCN)(OCC)OCC BHWUCEATHBXPOV-UHFFFAOYSA-N 0.000 claims description 2
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- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 2
- WDGIOFVKXHIBHX-UHFFFAOYSA-N 4,6-dimethyl-4,5,6,7-tetrahydro-2H-benzotriazole Chemical compound CC1CC(CC=2NN=NC21)C WDGIOFVKXHIBHX-UHFFFAOYSA-N 0.000 claims description 2
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- 235000012208 gluconic acid Nutrition 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- NFJSYLMJBNUDNG-UHFFFAOYSA-N 1,3-dipropylimidazolidin-2-one Chemical compound CCCN1CCN(CCC)C1=O NFJSYLMJBNUDNG-UHFFFAOYSA-N 0.000 description 1
- PVXVWWANJIWJOO-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-N-ethylpropan-2-amine Chemical compound CCNC(C)CC1=CC=C2OCOC2=C1 PVXVWWANJIWJOO-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- LVQLNOWMMHLQIA-UHFFFAOYSA-N 1-methyl-4,5,6,7-tetrahydrobenzotriazole Chemical compound C1CCCC2=C1N=NN2C LVQLNOWMMHLQIA-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- YENSVULFMBQEHJ-UHFFFAOYSA-N 2-[2-hydroxyethyl(methoxymethyl)amino]ethanol Chemical compound COCN(CCO)CCO YENSVULFMBQEHJ-UHFFFAOYSA-N 0.000 description 1
- NLCWFPMDXYWDOQ-UHFFFAOYSA-N 2-amino-1-methoxybutan-2-ol Chemical compound CCC(O)(N)COC NLCWFPMDXYWDOQ-UHFFFAOYSA-N 0.000 description 1
- UTBVIMLZIRIFFR-UHFFFAOYSA-N 2-methylthio-1,3-benzothiazole Chemical compound C1=CC=C2SC(SC)=NC2=C1 UTBVIMLZIRIFFR-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- YCGHZPCZCOSQKQ-UHFFFAOYSA-N 3-(2-ethylhexoxy)-n,n-dimethylpropanamide Chemical compound CCCCC(CC)COCCC(=O)N(C)C YCGHZPCZCOSQKQ-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- WZRXYYHAIRWEMH-UHFFFAOYSA-N CCC(O)(OCCN)COCCCC Chemical compound CCC(O)(OCCN)COCCCC WZRXYYHAIRWEMH-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- QMMZSJPSPRTHGB-UHFFFAOYSA-N MDEA Natural products CC(C)CCCCC=CCC=CC(O)=O QMMZSJPSPRTHGB-UHFFFAOYSA-N 0.000 description 1
- 229910016027 MoTi Inorganic materials 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- STVYXAGSSXIADA-UHFFFAOYSA-N ethanol imidazolidine Chemical compound CCO.C1CNCN1 STVYXAGSSXIADA-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000008624 imidazolidinones Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- JTIAYWZZZOZUTK-UHFFFAOYSA-N m-tert-butyltoluene Natural products CC1=CC=CC(C(C)(C)C)=C1 JTIAYWZZZOZUTK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 description 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
- C09K15/04—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds
- C09K15/06—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
- C09K15/04—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds
- C09K15/06—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing oxygen
- C09K15/08—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing oxygen containing a phenol or quinone moiety
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K15/00—Anti-oxidant compositions; Compositions inhibiting chemical change
- C09K15/04—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds
- C09K15/20—Anti-oxidant compositions; Compositions inhibiting chemical change containing organic compounds containing nitrogen and oxygen
-
- C11D11/0047—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 갈바닉 및 틈새 부식 방지력이 우수한 아미노알킬실란계 화합물을 적용한 레지스트 박리액 조성물, 이를 사용하여 제조되는 디스플레이 기판의 제조방법 및 이에 따른 디스플레이 기판 에 관한 것이다.The present invention relates to a resist stripping liquid composition to which an aminoalkylsilane compound having excellent galvanic and crevice corrosion resistance is applied, a method of manufacturing a display substrate using the same, and a display substrate therefor.
최근 디스플레이 기판의 고해상도 구현 요구가 증가함에 따라 단위면적당의 화소수를 증가시키기 위한 노력이 계속되고 있다. 이러한 추세에 따라 배선 폭의 감소가 요구되고 있으며, 그에 대응하기 위해서 건식 식각 공정이 도입되는 등 공정 조건도 갈수록 가혹해지고 있다. 또한, 평판표시장치의 대형화로 인해 배선에서의 신호 속도 증가도 요구되고 있으며, 그에 따라 알루미늄에 비해 비저항이 낮은 구리가 배선재료로 실용화되고 있다. 이에 발맞추어 레지스트 제거 공정인 박리공정에 사용되는 박리액에 대한 요구 성능도 높아지고 있다. 구체적으로 금속배선에 대한 부식 억제력 등에 대하여 상당한 수준의 박리특성이 요구되고 있다. 특히 알루미늄뿐만 아니라 구리에 대한 부식억제력도 요구되고 있으며, 가격 경쟁력 확보를 위해, 기판의 처리매수 증대와 같은 경제성도 요구되고 있다. 상기와 같은 업계의 요구에 응하여, 새로운 기술이 공개되고 있다.In recent years, efforts to increase the number of pixels per unit area have continued as the demand for realizing a high resolution of a display substrate has increased. In accordance with this trend, reduction of the wiring width is required, and in order to cope with this, the dry etching process has been introduced, and the process conditions have become increasingly severe. In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required, and copper having a lower resistivity than aluminum is now being used as a wiring material. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing. Specifically, a considerable level of exfoliating property with respect to corrosion inhibiting ability against metal wiring is required. In particular, corrosion resistance to copper as well as aluminum is required, and in order to secure price competitiveness, economic efficiency such as increase in the number of processed substrates is also required. In response to the needs of such industries, new technologies are being published.
예컨대, 대한민국 등록특허 10-1557778에서 알칸올 아민, 유기용매 등을 포함하는 레지스트박리액 조성물을 개시하고 있으나, 몰리브덴등의 금속을 포함하는 하부 금속막 또는 금속배선 등에 대한 방식력을 개선시키지 못하였다. For example, Korean Patent Registration No. 10-1557778 discloses a resist stripper composition containing an alkanolamine, an organic solvent and the like, but does not improve the anticorrosion properties of a metal film or a metal wiring including a metal such as molybdenum .
본 발명은 상기와 같은 문제점을 해결하기 위한 것으로서, 몰리브덴을 포함하는 하부 금속막 또는 금속배선에 대한 방식력이 우수하면서, 높은 박리력을 나타내는 레지스트 박리액 조성물, 이를 사용하여 제조되는 디스플레이 기판의 제조방법 및 이에 따른 디스플레이 기판을 제공하는 것을 목적으로 한다. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a resist stripping liquid composition which exhibits excellent anti-corrosive effect on a metal film or metal wiring including molybdenum and exhibits high stripping force, And a display substrate therefor.
상기 목적을 달성하기 위하여,In order to achieve the above object,
본 발명은 (a) 하기 화학식 1의 구조를 갖는 아미노알킬실란계 화합물; (b) 알칸올 아민; 및 (c) 극성유기용매를 포함하는 것을 특징으로 하는 레지스트 박리액 조성물을 제공한다.(A) an aminoalkylsilane compound having a structure represented by the following formula (1); (b) an alkanolamine; And (c) a polar organic solvent.
본 발명은 상기 레지스트 박리액 조성물을 사용하여 디스플레이 기판을 세정하는 공정을 포함하는 디스플레이 기판의 제조방법을 제공한다.The present invention provides a method of manufacturing a display substrate including a step of cleaning a display substrate using the resist stripping liquid composition.
또한, 본 발명은 상기 제조방법으로 제조된 디스플레이 기판을 제공한다.The present invention also provides a display substrate manufactured by the above manufacturing method.
본 발명에 따른 레지스트 박리액 조성물은 탈이온수 및 극성용매에 용해력이 뛰어난 아미노알킬실란계 화합물의 사용으로, 알루미늄, 구리, 텅스텐, 몰리브덴, 티타늄 및 이를 포함하는 하부 금속막 또는 금속배선에 부식을 발생시키지 않으며, 높은 박리력을 나타내는 효과를 갖는다. The resist stripping liquid composition according to the present invention causes corrosion in aluminum, copper, tungsten, molybdenum, titanium and a lower metal film or metal wiring containing the same by using an aminoalkylsilane compound having excellent solubility in deionized water and a polar solvent And has an effect of exhibiting a high peeling force.
본 발명은, 레지스트 박리액 조성물, 이를 사용하여 제조되는 디스플레이 기판의 제조방법 및 이에 따른 디스플레이 기판에 대한 것이다.The present invention relates to a resist stripping liquid composition, a method of manufacturing a display substrate manufactured using the same, and a display substrate therefor.
본 발명에 따른 레지스트 박리액 조성물은 (a) 아미노알킬실란계 화합물; (b) 알칸올 아민; 및 (c) 극성유기 용매를 포함하며, 특히 탈이온수 및 극성용매에 용해력이 뛰어난 아미노알킬실란계 화합물의 사용으로, 알루미늄, 구리, 텅스텐, 몰리브덴, 티타늄 및 이를 포함하는 하부 금속막 또는 금속배선에 부식을 발생시키지 않으며, 높은 박리력을 나타내는 효과를 갖는다. 본발명에 따른 레지스트 박리액 조성물은 (d)부식방지제를 추가로 포함할 수 있다.The resist stripping composition according to the present invention comprises (a) an aminoalkylsilane compound; (b) an alkanolamine; Copper, tungsten, molybdenum, titanium and the underlying metal film or metal wiring comprising the same, and (c) a polar organic solvent, in particular by using an aminoalkylsilane compound having excellent solubility in deionized water and a polar solvent. It does not cause corrosion and has an effect of exhibiting high peeling force. The resist stripping liquid composition according to the present invention may further contain (d) a corrosion inhibitor.
이하, 본 발명의 내용을 구성별로 상세히 설명한다. Hereinafter, the contents of the present invention will be described in detail according to the constitution.
(a) 아미노알킬실란계 화합물 (a) an aminoalkylsilane compound
본 발명에 사용되는 (a) 아미노알킬실란계 화합물은 하기 화학식 1의 구조를 갖는다. The aminoalkylsilane compound (a) used in the present invention has a structure represented by the following formula (1).
[화학식 1][Chemical Formula 1]
상기 화학식 1 에서, In Formula 1,
R1, R2 및 R3는, 각각 독립적으로, 탄소수 1내지 4의 알킬기이며; R 1 , R 2 and R 3 are each independently an alkyl group having 1 to 4 carbon atoms;
R4는 탄소수 1 내지 5의 알킬렌기이며; R 4 is an alkylene group having 1 to 5 carbon atoms;
R5 및 R6는, 각각 독립적으로, 수소원자, 탄소수 1내지 5의 알킬기, 하이드록시기 또는 탄소원자 1내지 4의 알콕시기이며, R5가 하이드록시기 또는 알콕시기 일 경우 R6는 수소원자 또는 알킬기 이며, R6가 히드록시기 또는 알콕시기일 경우 R5는 수소원자 또는 알킬기이다.R 5 and R 6 are, each independently, when one is hydrogen atom, an alkoxy group having 1 to 5 carbon atoms alkyl group, a hydroxyl group or 1 to 4 carbon atoms of, R 5 hydroxyl or alkoxy groups R 6 is hydrogen An atom or an alkyl group, and when R 6 is a hydroxy group or an alkoxy group, R 5 is a hydrogen atom or an alkyl group.
상기 탄소수 1내지 4의 알킬기는, 3개이상의 탄소수를 가지는 경우 사슬 또는 분지형 일 수 있다.The alkyl group having 1 to 4 carbon atoms may be in the form of a chain or a branched chain if it has 3 or more carbon atoms.
화학식 1로 나타내어지는 (a) 아미노알킬실란계 화합물의 종류로 바람직하게는 (2-아미노에틸)트리에톡시실란, (3-아미노프로필)트리메톡시실란, (3-아미노프로필)트리에톡시실란 등을 들을 수 있으며, 이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다.As the kind of the aminoalkylsilane compound represented by the formula (1), (2-aminoethyl) triethoxysilane, (3-aminopropyl) trimethoxysilane, (3-aminopropyl) triethoxy Silane, etc. These may be used singly or in combination of two or more.
또한, 본 발명에서 상기(a) 아미노알킬실란계 화합물에 (3-아미노프로필)실란트리올 등의 화합물을 추가로 첨가하여 사용할 수 있다. Further, in the present invention, a compound such as (3-aminopropyl) silanetriol may be further added to the aminoalkylsilane compound (a).
본 발명의 (a) 아미노알킬실란계 화합물은 레지스트 박리 중 발생할 수 있는 금속의 부식을 방지하는 능력이 우수하며 특히 알루미늄, 몰리브덴 및 구리와 몰리브덴을 포함하는 합금에서 발생하는 갈바닉부식 및 틈새부식의 방식력이 뛰어남을 실험적으로 확인하였다. The aminoalkylsilane compound (a) of the present invention is excellent in the ability to prevent corrosion of metals that can occur during resist stripping, and is particularly suitable for galvanic corrosion and crevice corrosion in aluminum, molybdenum, and alloys containing copper and molybdenum And it is experimentally confirmed that the power is excellent.
상기 화학식 1로 표현되는 (a) 아미노알킬실란계 화합물은 조성물 총 중량에 대해 0.001중량% 내지 3중량%로 포함하는 것이 바람직하고, 0.005중량% 내지 1중량%가 더욱 바람직하다. 0.001중량%미만이면 박리 혹은 탈이온수에 의한 린스 공정에서 금속배선에 부식이 발생 할 수 있으며 3중량%를 초과할 경우 부식 방지제 함량 증가에 따른 부식 방지 효과의 향상을 얻을 수 없으므로 경제적으로 바람직하지 않다.The amount of the aminoalkylsilane compound (a) represented by Formula 1 is preferably 0.001 to 3 wt%, more preferably 0.005 to 1 wt% based on the total weight of the composition. If the amount is less than 0.001% by weight, corrosion may occur in the metal wiring in the rinsing process by peeling or deionized water. If the amount is more than 3% by weight, improvement in corrosion prevention effect due to increase in the content of the corrosion inhibitor can not be obtained economically .
(b) 알칸올아민(b) an alkanolamine
본 발명의 알칸올아민은 건식 또는 습식 식각, 애싱(ashing) 또는 이온주입 공정(ion implant processing) 등의 여러 공정 조건하에서 변질되거나 가교된 레지스트(resist)의 고분자 매트릭스에 강력하게 침투하여 분자 내 또는 분자간에 존재하는 결합을 깨뜨리는 역할을 하며, 기판에 잔류하는 레지스트 내의 구조적으로 취약한 부분에 빈 공간을 형성시켜 레지스트를 무정형의 고분자 겔(gel)덩어리 상태로 변형시킴으로써 기판 상부에 부착된 레지스트가 쉽게 제거될 수 있게 한다.The alkanolamine of the present invention strongly penetrates into the polymer matrix of the modified or crosslinked resist under various process conditions such as dry or wet etching, ashing or ion implant processing, The resist attached to the upper part of the substrate is easily removed by deforming the resist into amorphous polymer gel state by forming an empty space in the structurally weak part in the resist remaining on the substrate, .
상기 알칸올아민에는 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 모노프로판올아민, 2-아미노에탄올, 2-(에틸아미노)에탄올, 2-(메틸아미노)에탄올, N-메틸 디에탄올아민, N,N-디메틸에탄올아민, N,N-디에틸아미노에탄올, 2-(2-아미노에틸아미노)-1-에탄올, 1-아미노-2-프로판올, 2-아미노-1-프로판올, 3-아미노-1-프로판올, 4-아미노-1-부탄올, 디부탄올아민, (메톡시메틸)디에탄올아민, (히드록시에틸옥시메틸)디에틸아민, 메틸(메톡시메틸)아미노에탄올, 메틸(부톡시메틸)아미노에탄올, 2-(2-아미노에톡시)에탄올, 1-(2-히드록시에틸)피페라진, 1-(2-히드록시에틸)메틸피페라진, N-(2-히드록시에틸)모폴린, N-(3-히드록시프로필)모폴린 등을 들 수 있으며, 이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다.Examples of the alkanolamine include monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyldiethanolamine, N-dimethylaminoethanol, N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1-ethanol, 1-amino-2-propanol, (Methoxymethyl) diethanolamine, (hydroxyethyloxymethyl) diethylamine, methyl (methoxymethyl) aminoethanol, methyl (butoxymethyl) (2-aminoethoxy) ethanol, 1- (2-hydroxyethyl) piperazine, 1- (2-hydroxyethyl) methylpiperazine, N- , And N- (3-hydroxypropyl) morpholine. These may be used alone or in combination of two or more.
본 발명의 (b) 알칸올아민의 함량은 전체 조성물 총중량에 대해 0.1 내지 20 중량%가 바람직 하고 0.5 내지 10중량%가 더 바람직하다. 0.1 중량% 미만이면 레지스트 제거력 저하가 발생할 수 있으며 20중량%를 초과하면 알칸올아민 증량에 따른 레지스트 제거력 향상의 효과를 얻을 수 없어 경제적이지 못하며 또한 금속막질에 대한 부식 수준이 상승하게 되는 문제점이 발생할 수 있다. The content of the alkanolamine (b) in the present invention is preferably 0.1 to 20% by weight, more preferably 0.5 to 10% by weight based on the total weight of the entire composition. If the amount is less than 0.1% by weight, the resist removing ability may be lowered. If the amount of the alkanolamine is more than 20% by weight, the effect of improving the resist removing ability due to the increase of the alkanolamine may not be obtained, which is not economical. .
(c) 극성 유기용매(c) a polar organic solvent
본 발명에 사용되는 (c) 극성유기용매는 양자성 극성용매와 비양자성 극성용매를 들 수 있으며, 이들은 각각 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다. 상기 양자성 극성용매의 바람직한 예로는, 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜, 폴리프로필렌글리콜, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르 등의 알킬렌글리콜 모노알킬 에테르, 프로필렌글리콜 모노메틸 에테르 아세테이트 및 테트라하이드로퍼푸릴 알코올 등을 들 수 있으며,이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다.The polar organic solvent (c) used in the present invention includes a protonic polar solvent and an aprotic polar solvent, which may be used alone or in combination of two or more. Preferable examples of the protonic polar solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, di Ethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol, polypropylene glycol, Alkylene glycol monoalkyl ethers such as polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether; Recycled monomethyl ether acetate, and tetrahydroperfuryl alcohol. These solvents may be used alone or in admixture of two or more.
상기 비양자성 극성용매의 바람직한 예로는 N-메틸 피롤리돈, N-에틸 피롤리돈 등의 피롤리돈 화합물; 1,3-디메틸-2-이미다졸리디논, 1,3-디프로필-2-이미다졸리디논 등의 이미다졸리디논 화합물; γ-부티로락톤 등의 락톤 화합물; 디메틸술폭사이드(DMSO), 술폴란 등의 설폭사이드 화합물; 트리에틸포스페이트, 트리부틸포스페이트 등의 포스페이트 화합물; 디메틸카보네이트, 에틸렌카보네이토 등의 카보네이트 화합물; 포름아미드, N-메틸포름아미드, N-에틸포름아미드, N,N-디메틸포름아미드, N,N-디에틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-(2-히드록시에틸)아세트아미드, N,N-디메틸프로피온아미드, 3-메톡시-N,N-디메틸프로피온아미드, 3-(2-에틸헥실옥시)-N,N-디메틸프로피온아미드, 3-부톡시-N,N-디메틸프로피온아미드 등의 아미드 화합물을 들 수 있으며, 이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다.Preferable examples of the aprotic polar solvent include pyrrolidone compounds such as N-methylpyrrolidone and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethylsulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; Carbonate compounds such as dimethyl carbonate, ethylene carbonate, and the like; N, N-dimethylacetamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N - (2-hydroxyethyl) acetamide, N, N-dimethylpropionamide, 3- methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide , And 3-butoxy-N, N-dimethylpropionamide. These may be used alone or in combination of two or more.
상기 (c) 극성 유기용매는 겔화된 레지스트 고분자를 용해 시키는 역할을 하며, 또한 레지스트 박리 이후 탈이온수의 린스 과정에서 물에 의한 박리액의 제거를 수월하게 하여 박리액 및 용해된 레지스트의 재흡착/재부착을 최소화 한다. 상기 (c) 극성 유기용매는 적당한 박리력을 위해 비점이 너무 높거나 낮지 않은 것이 바람직하고, 혼합 사용할 수 있다. 상기 극성유기용매는 박리 공정에서 추가 요청되는 성능에 따라 추가 될 수 있다. The polar organic solvent (c) serves to dissolve the gelled resist polymer. In addition, since the removal of the peeling liquid by the water during rinsing of the deionized water after the resist peeling is facilitated, the peeling liquid and the resorption / Minimize reattachment. The polar organic solvent (c) preferably has neither too high nor too low a boiling point for proper peeling power, and may be used in combination. The polar organic solvent may be added according to the performance required in the peeling process.
상기 (c) 극성 유기 용매의 함량은 전체 조성물 총중량에 대해 80 내지 99.8 중량%가 적당하다. 80 중량% 미만이면 용해력 저하가 발생할 수 있으며 탈이온수에 의한 린스 공정에서 레지스트의 재흡착/재부착이 발생할 수 있다. 또한 99.8 중량%를 초과하면 상대적으로 (b) 알칸올아민의 함량이 줄어들어 박리력이 저하될 수 있다.The content of the (c) polar organic solvent is preferably 80 to 99.8% by weight based on the total weight of the entire composition. If the amount is less than 80% by weight, the solubility may be lowered, and re-adsorption / redeposition of the resist may occur in the rinsing step with deionized water. On the other hand, when the amount of the alkanolamine is more than 99.8% by weight, the content of the alkanolamine (b) may be relatively decreased and the peeling force may be lowered.
(d) 부식 방지제(d) Corrosion inhibitor
본 발명의 조성물은(d) 부식 방지제를 추가로 포함할 수 있으며, 구체적으로 본발명의 부식 방지제는 포름산, 아세트산, 프로피온산과 같은 모노카르복실산; 수산, 말론산, 숙신산, 글루탄산, 아디프산, 피멜산, 말레산, 푸르마산, 글루타코닉산과 같은 디카르복실산; 트리멜리트산, 트리카르발릴산과 같은 트리카르복실산; 히드록시초산, 젖산, 살리실산, 말산, 주석산, 구연산, 글루콘산 및 옥시카르복실산 등의 유기산 류; 숙시닉 아미드 에스터, 말릭 아미드 에스터, 말레릭 아미드 에스터, 푸마릭 아미드 에스터, 옥살릭 아미드 에스터, 말로닉 아미드 에스터, 글루타릭 아미드 에스터, 아세틱 아미드 에스터, 락틱 아미드 에스터, 시트릭 아미드 에스터, 타르타릭 아미드 에스터, 글루콜릭 아미드 에스터, 포믹 아미드 에스터 및 우릭 아미드 에스터 등의 유기산 아미드 에스터류; 벤조트리아졸, 톨리트리아졸, 메틸 톨리트리아졸, 2,2'-[[[벤조트리아졸]메틸]이미노]비스에탄올, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스메탄올, 2,2'-[[[에틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스에탄올, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스에탄올, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스카르복시산, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스메틸아민 및 2,2'-[[[아민-1수소-벤조트리아졸-1-일]메틸]이미노]비스에탄올 4-메틸-1-수소-벤조트리아졸, 6-메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 4-메틸-4,5,6,7-테트라히드로-1H 벤조[1,2,3]트리아졸, 5-메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 5,6-디메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 4,6-디메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸 및 5-메틸-1-수소-벤조트리아졸 등과 같은 아졸계화합물; 2,6-디메틸페놀, 2,4,6-트리메틸페놀, 2,6-디에틸페놀, 2,6-디에틸-4-메틸페놀, 2,6-디프로필페놀, 2,6-트리프로-4-메틸페놀, 2,6-디-t-부틸페놀, 2,4,6-트리-t-부틸페놀 및 2,6-디-t-부틸-4-메틸페놀 등과 같은 대칭형 페놀계 화합물; 등을 들 수 있으나 이에 한정되지 않는다. 이들은 단독으로 또는 2종 이상을 혼합하여 사용할 수 있다.The composition of the present invention may further contain (d) a corrosion inhibitor. Specifically, the corrosion inhibitor of the present invention may be a monocarboxylic acid such as formic acid, acetic acid, or propionic acid; Dicarboxylic acids such as acetic acid, malic acid, malonic acid, succinic acid, gluconic acid, adipic acid, pimelic acid, maleic acid, fumaric acid and glutaconic acid; Tricarboxylic acids such as trimellitic acid and tricarvaleric acid; Organic acids such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxycarboxylic acid; Maleic amide esters, maleic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, Organic acid amide esters such as tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, 2,2 '- [[[[[benzotriazole] methyl] imino] bisethanol, 2,2' - [[[methyl-1-hydrogen-benzotriazole Yl] methyl] imino] bisethanol, 2,2 '- [[[ethyl-1-hydrogen-benzotriazol- Methyl-imino] biscarboxylic acid [methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol and 2,2 '- [[ Methyl] imino] bismethylamine and 2,2 '- [[[amine-1-hydrogen-benzotriazol-1-yl] Methyl] -4,5-dihydro-1H-benzo [1,2,3] triazole, 4 Methyl-4,5,6,7-tetrahydro-1H benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3 ] Triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, 4,6-dimethyl-4,5,6,7-tetrahydro -1H-benzo [1,2,3] tri Azole and 5-methyl-1-hydrogen-azole compounds such as benzotriazole; 2,6-dimethylphenol, 2,4,6-trimethylphenol, 2,6-diethylphenol, 2,6-diethyl-4-methylphenol, 4-methylphenol, 2,6-di-t-butylphenol, 2,4,6-tri-t-butylphenol and 2,6- ; But is not limited thereto. These may be used alone or in combination of two or more.
본 발명의 (d) 부식방지제의 함량은 조성물 총 중량 대비 0.001 내지 1.0 중량 %일 수 있다. 부식방지제가 0.001 중량 % 미만으로 포함될 경우 구리 표면에 미약한 부식이 발생하는 문제점이 있으며, 1.0 중량 % 초과하여 포함될 경우 증량에 따른 부식방지 효과를 얻지 못하여 경제적이지 못하다. The content of (d) the corrosion inhibitor of the present invention may be 0.001 to 1.0% by weight based on the total weight of the composition. When the amount of the corrosion inhibitor is less than 0.001% by weight, there is a problem that slight corrosion occurs on the copper surface. When the corrosion inhibitor is contained in an amount exceeding 1.0% by weight, corrosion prevention effect due to the increase is not obtained.
본 발명의 레지스트 박리액 조성물은 반도체 또는 전자제품, 특히 디스플레이용 레지스트의 제거 공정에서 유용하게 사용될 수 있다.The resist stripping liquid composition of the present invention can be usefully used in a process for removing a semiconductor or an electronic product, particularly a resist for display.
즉, 본 발명은 본 발명의 레지스트 박리액 조성물을 이용하여 디스플레이 기판을 세정하는 공정을 포함하는 디스플레이 기판의 제조방법 및 상기 제조방법으로 제조된 디스플레이 기판을 포함한다.That is, the present invention includes a method of manufacturing a display substrate including a step of cleaning a display substrate using the resist stripping liquid composition of the present invention and a display substrate manufactured by the manufacturing method.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다.Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
<실시예 및 비교예> 레지스트 박리액 조성물의 제조EXAMPLES AND COMPARATIVE EXAMPLES Preparation of resist stripper composition
하기 표 1에 기재된 성분을 해당 조성비로 혼합하여 실시예 및 비교예의 레지스트 박리액 조성물을 제조하였다.The components shown in Table 1 below were mixed in the composition ratios to prepare resist stripper compositions of Examples and Comparative Examples.
주)) APTES: (3-아미노프로필)트리에톡시실란) APTES: (3-aminopropyl) triethoxysilane
APSTO: (3-아미노프로필)실란트리올APSTO: (3-aminopropyl) silanetriol
AEE: 2-(2-아미노에톡시)-1-에탄올AEE: 2- (2-aminoethoxy) -1-ethanol
MAE: 2-(메틸아미노)에탄올MAE: 2- (methylamino) ethanol
MDEA: N-메틸디에탄올아민MDEA: N-methyldiethanolamine
IME: 이미다졸리딘 에탄올IME: imidazolidine Ethanol
NMF: N-메틸포름아미드NMF: N-methylformamide
NEF: N-에틸포름아미드NEF: N-ethylformamide
NMP: N-메틸피롤리돈NMP: N-methylpyrrolidone
MDG: 디에틸렌글리콜 모노메틸 에테르MDG: diethylene glycol monomethyl ether
EDG: 디에틸렌글리콜 모노에틸 에테르EDG: diethylene glycol monoethyl ether
BDG: 디에틸렌글리콜 모노부틸 에테르BDG: diethylene glycol monobutyl ether
MTG: 트리에틸렌글리콜 모노메틸 에테르MTG: triethylene glycol monomethyl ether
TTA: 톨릴트리아졸TTA: tolyltriazole
MTBT: 6-메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸MTBT: 6-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole
<실험예 1> 박리액의 포토레지스트 박리력 평가EXPERIMENTAL EXAMPLE 1 Evaluation of Photoresist Peelability of Peeling Solution
레지스트 박리액 조성물의 박리효과를 확인하기 위하여 유리 기판상에 포지티브 포토레지스트(DWG-520:당사 PR)를 1.7um 도포 시킨 후 170℃에서 10분간 Hot plate에서 Hard bake를 실시하여 기판을 준비하였다. 레지스트 박리액 조성물을 50로 온도를 일정하게 유지시킨 후 상기 기판을 30초 간격으로 침적하여 박리력을 평가하였다. 이후 기판상에 잔류하는 박리액의 제거를 위해서 DIW로 1분간 세정을 실시하였으며, 세정 후 기판 상에 잔류하는 DIW를 제거하기 위하여 질소를 이용하여 기판을 완전히 건조시켰다. 평가가 완료된 기판을 육안으로 확인하여 완전히 레지스트가 제거되는 시간을 측정하였으며 그 결과를 하기 표 2에 나타냈으며 시간이 짧을수록 박리 효과가 우수하다고 할 수 있다.In order to confirm the peeling effect of the resist stripping solution composition, a positive photoresist (DWG-520: our PR) was applied on a glass substrate in an amount of 1.7 .mu.m and hard bake was performed at 170.degree. C. for 10 minutes in a hot plate. After the resist stripper solution composition was maintained at a constant temperature of 50, the substrate was immersed at intervals of 30 seconds to evaluate the peeling force. Then, the substrate was cleaned with DIW for 1 minute to remove the peeling liquid remaining on the substrate, and the substrate was completely dried with nitrogen to remove the DIW remaining on the substrate after cleaning. The evaluated substrate was visually inspected and the time for completely removing the resist was measured. The results are shown in Table 2 below. The shorter the time, the better the peeling effect.
<실험예 2> 박리액 금속 배선 방식력 평가≪ Experimental Example 2 >
레지스트 박리액 조성물의 금속배선에 대한 부식 방지능력 평가를 위하여 통상적인 방법에 따라 유리 기판상에 박막 스퍼터링법을 사용하여 Mo/Al, Cu/X층(X : Ti, Mo, MoTi, MoW, MoNb)을 형성한 후, 포토 레지스트 패턴을 형성시킨 이후, 습식 식각 방식에 의해 금속막을 에칭한 기판을 각각 준비하였다. 간이 Strip Spray 평가 설비를 이용하여 박리액 조성물을 60℃로 온도를 일정하게 유지시키고 상기 기판을 2분간 2kgf/cm2 압력으로 Spray Strip을 진행한 후, 간이 DIW 세정 Spray 설비를 이용하여 상기 Strip이 완료된 기판을 상온에서 3분간 2kgf/cm2 압력으로 Spray 세정을 실시 하였다. 세정이 완료된 기판은 N2를 이용하여 건조를 실시하였으며 상기 Strip 공정에서 DIW 세정 및 건조에 이르는 공정을 3회 반복을 실시하여 그 기판을 전자현미경(SEM, Hitach S-4700)을 이용하여 평가하였다. 그 결과를 하기의 표 2에 나타냈으며 금속 별 부식 정도에 따라 부식이 관찰되지 않음은 ◎, 부식이 미세하게 관찰 되나 막질 적용에 문제 없음은 ○, 부식이 관찰되며 막질 적용 시 문제발생 가능성이 큼은 △, 부식이 심하게 관찰 되며 막질 적용 불가는 ×로 표시 하였다.Mo / Mo, MoTi, MoW, MoNb, Mo / Al, and Cu / X layers were formed on a glass substrate by a thin film sputtering method according to a conventional method in order to evaluate the corrosion- ), A photoresist pattern was formed, and then a substrate on which a metal film was etched by a wet etching method was prepared. The stripping liquid composition was maintained at a constant temperature of 60 ° C using a simple strip spray evaluation apparatus, and the substrate was subjected to a spray strip at a pressure of 2 kgf / cm 2 for 2 minutes. Then, the strip was cleaned using a simple DIW cleaning spraying apparatus, The completed substrate was subjected to spray cleaning at a pressure of 2 kgf / cm < 2 > for 3 minutes at room temperature. The substrate which had been cleaned was dried using N 2 , and the process from the strip process to DIW washing and drying was repeated three times, and the substrate was evaluated using an electron microscope (SEM, Hitachi S-4700) . The results are shown in Table 2 below. No corrosion was observed according to the degree of corrosion of each metal, and corrosion was observed microscopically. However, there was no problem in application of the membrane, and corrosion was observed. △, corrosion was observed very badly and membrane quality was not applicable.
상기 실험결과를 참고하면, 본 발명의 레지스트 박리액 조성물은 탈이온수 및 극성용매에 용해력이 뛰어난 아미노알킬실란계 화합물의 사용으로 알루미늄, 구리, 텅스텐, 몰리브덴, 티타늄 및 이를 포함하는 금속배선에 부식을 발생시키지 않으면서 높은 박리력 효과를 가짐을 확인 할 수 있다. With reference to the above experimental results, the resist stripping composition of the present invention was found to be resistant to corrosion of aluminum, copper, tungsten, molybdenum, titanium and metal wiring containing the same by using an aminoalkylsilane compound having excellent solubility in deionized water and polar solvents It is possible to confirm that it has a high peeling force effect without causing it to occur.
Claims (13)
(b) 알칸올 아민; 및
(c) 극성유기용매를 포함하는 것을 특징으로 하는 레지스트 박리액 조성물.
[화학식 1]
(상기 화학식 1 에서,
R1, R2 및 R3는, 각각 독립적으로, 탄소수 1내지 4의 알킬기이며;
R4는 탄소수 1 내지 5의 알킬렌기이며; 및
R5 및 R6는, 각각 독립적으로, 수소원자, 탄소수 1내지 5의 알킬기, 하이드록시기 또는 탄소원자 1내지 4의 알콕시기이며, R5가 하이드록시기 또는 알콕시기 일 경우 R6는 수소원자 또는 알킬기 이며, R6가 히드록시기 또는 알콕시기일 경우 R5는 수소원자 또는 알킬기이다.)(a) an aminoalkylsilane compound having a structure represented by the following formula (1);
(b) an alkanolamine; And
(c) a polar organic solvent.
[Chemical Formula 1]
(In the formula 1,
R 1 , R 2 and R 3 are each independently an alkyl group having 1 to 4 carbon atoms;
R 4 is an alkylene group having 1 to 5 carbon atoms; And
R 5 and R 6 are, each independently, when one is hydrogen atom, an alkoxy group having 1 to 5 carbon atoms alkyl group, a hydroxyl group or 1 to 4 carbon atoms of, R 5 hydroxyl or alkoxy groups R 6 is hydrogen An atom or an alkyl group, and when R 6 is a hydroxy group or an alkoxy group, R 5 is a hydrogen atom or an alkyl group.
(d) 부식방지제를 더 포함하는 것을 특징으로 하는 레지스트 박리액 조성물.
The method according to claim 1,
(d) a corrosion inhibitor.
상기 부식방지제는 Cu 부식방지제인 것을 특징으로 하는 레지스트 박리액 조성물.
3. The method of claim 2,
Wherein the corrosion inhibitor is a Cu corrosion inhibitor.
상기 (a) 아미노 알킬실란계 화합물은 (2-아미노에틸)트리에톡시실란, (3-아미노프로필)트리메톡시실란 및 (3-아미노프로필)트리에톡시실란 중 하나 이상인 것을 특징으로 하는 레지스트 박리액 조성물.
The method according to claim 1,
Wherein the aminoalkylsilane compound (a) is at least one of (2-aminoethyl) triethoxysilane, (3-aminopropyl) trimethoxysilane and (3-aminopropyl) triethoxysilane. Peeling liquid composition.
상기 (b)알칸올 아민은 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 모노프로판올아민, 2-아미노에탄올, 2-(에틸아미노)에탄올, 2-(메틸아미노)에탄올, N-메틸 디에탄올아민, N,N-디메틸에탄올아민, N,N-디에틸아미노에탄올, 2-(2-아미노에틸아미노)-1-에탄올, 1-아미노-2-프로판올, 2-아미노-1-프로판올, 3-아미노-1-프로판올, 4-아미노-1-부탄올, 디부탄올아민, (메톡시메틸)디에탄올아민, (히드록시에틸옥시메틸)디에틸아민, 메틸(메톡시메틸)아미노에탄올, 메틸(부톡시메틸)아미노에탄올, 2-(2-아미노에톡시)에탄올, 1-(2-히드록시에틸)피페라진, 1-(2-히드록시에틸)메틸피페라진, N-(2-히드록시에틸)모폴린 및 N-(3-히드록시프로필)모폴린 중 하나 이상인 것을 특징으로 하는 레지스트 박리액 조성물.
5. The method according to any one of claims 1 to 4,
The (b) alkanolamine may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- , N, N-dimethyl ethanolamine, N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1- (Methoxymethyl) aminoethanol, methyl (methoxymethyl) diethanolamine, (hydroxyethyloxymethyl) diethylamine, methyl (2-hydroxyethyl) piperazine, 1- (2-hydroxyethyl) methylpiperazine, N- (2-hydroxyethyl) ) Morpholine and N- (3-hydroxypropyl) morpholine.
상기 (c) 극성유기용매는 양자성 극성용매 및 비양자성 극성용매 중 하나 이상인 것을 특징으로 하는 레지스트 박리액 조성물.
5. The method according to any one of claims 1 to 4,
Wherein the polar organic solvent (c) is at least one of a protonic polar solvent and an aprotic polar solvent.
상기 양자성 극성용매는 에틸렌글리콜 모노메틸 에테르, 에틸렌글리콜 모노에틸 에테르, 에틸렌글리콜 모노이소프로필 에테르, 에틸렌글리콜 모노부틸 에테르, 디에틸렌글리콜 모노메틸 에테르, 디에틸렌글리콜 모노에틸 에테르, 디에틸렌글리콜 모노이소프로필 에테르, 디에틸렌글리콜 모노부틸 에테르, 트리에틸렌글리콜 모노메틸 에테르, 트리에틸렌글리콜 모노에틸 에테르, 트리에틸렌글리콜 모노이소프로필 에테르, 트리에틸렌글리콜 모노부틸 에테르, 폴리에틸렌글리콜 모노메틸 에테르, 폴리에틸렌글리콜 모노부틸 에테르, 프로필렌글리콜 모노메틸 에테르, 디프로필렌글리콜 모노메틸 에테르, 트리프로필렌글리콜 모노메틸 에테르, 프로필렌글리콜 모노메틸 에테르 아세테이트 및 테트라하이드로퍼푸릴 알코올 중 하나 이상인 것을 특징으로 하는 레지스트 박리제 조성물.
The method according to claim 6,
Wherein the protonic polar solvent is selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisoprene Propylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether , Propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and tetrahydroperfuryl alcohol. By weight of the resist stripper composition.
상기 비양자성 극성용매는 N-메틸 피롤리돈(NMP), N-에틸 피롤리돈, 1,3-디메틸-2-이미다졸리디논, 1,3-디프로필-2-이미다졸리디논, γ-부티로락톤, 디메틸술폭사이드(DMSO), 술폴란, 트리에틸포스페이트, 트리부틸포스페이트, 디메틸카보네이트, 에틸렌카보네이토, 포름아미드, N-메틸포름아미드, N,N-디메틸포름아미드, 아세트아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-(2-히드록시에틸)아세트아미드, 3-메톡시-N,N-디메틸프로피온아미드, 3-(2-에틸헥실옥시)-N,N-디메틸프로피온아미드 및 3-부톡시-N,N-디메틸프로피온아미드 중 하나 이상인 것을 특징으로 하는 레지스트 박리제 조성물.
The method according to claim 6,
The aprotic polar solvent may be selected from the group consisting of N-methylpyrrolidone (NMP), N-ethylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, (DMSO), sulfolane, triethylphosphate, tributylphosphate, dimethyl carbonate, ethylene carbonate, formamide, N-methylformamide, N, Amide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3- methoxy-N, N-dimethylpropionamide, 3- ) -N, N-dimethylpropionamide and 3-butoxy-N, N-dimethylpropionamide.
(d) 부식 방지제는 포름산, 아세트산, 프로피온산, 수산, 말론산, 숙신산, 글루탄산, 아디프산, 피멜산, 말레산, 푸르마산, 글루타코닉산, 트리멜리트산, 트리카르발릴산, 히드록시초산, 젖산, 살리실산, 말산, 주석산, 구연산, 글루콘산, 옥시카르복실산, 숙시닉 아미드 에스터, 말릭 아미드 에스터, 말레릭 아미드 에스터, 푸마릭 아미드 에스터, 옥살릭 아미드 에스터, 말로닉 아미드 에스터, 글루타릭 아미드 에스터, 아세틱 아미드 에스터, 락틱 아미드 에스터, 시트릭 아미드 에스터, 타르타릭 아미드 에스터, 글루콜릭 아미드 에스터, 포믹 아미드 에스터 , 우릭 아미드 에스터, 벤조트리아졸, 톨리트리아졸, 메틸 톨리트리아졸, 2,2'-[[[벤조트리아졸]메틸]이미노]비스에탄올, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스메탄올, 2,2'-[[[에틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스에탄올, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스에탄올, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스카르복시산, 2,2'-[[[메틸-1수소-벤조트리아졸-1-일]메틸]이미노]비스메틸아민, 2,2'-[[[아민-1수소-벤조트리아졸-1-일]메틸]이미노]비스에탄올 4-메틸-1-수소-벤조트리아졸, 6-메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 4-메틸-4,5,6,7-테트라히드로-1H 벤조[1,2,3]트리아졸, 5-메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 5,6-디메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 4,6-디메틸-4,5,6,7-테트라히드로-1H-벤조[1,2,3]트리아졸, 5-메틸-1-수소-벤조트리아졸, 2,6-디메틸페놀, 2,4,6-트리메틸페놀, 2,6-디에틸페놀, 2,6-디에틸-4-메틸페놀, 2,6-디프로필페놀, 2,6-트리프로-4-메틸페놀, 2,6-디-t-부틸페놀, 2,4,6-트리-t-부틸페놀 및 2,6-디-t-부틸-4-메틸페놀 중 하나 이상인 것을 특징으로 하는 레지스트 박리액 조성물.
3. The method of claim 2,
(d) The corrosion inhibitor is selected from the group consisting of formic acid, acetic acid, propionic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, fumaric acid, glutaconic acid, trimellitic acid, tricarbalic acid, Maleic acid esters, malonic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, maleic anhydride esters, But are not limited to, glutaric amide esters, acetic amide esters, lactic amide esters, citric amide esters, tartaric amide esters, gluconic amide esters, Dihydro-benzotriazol-1-yl] methyl] imino] bis (2,2 '- [[ Methanol, 2,2 '- [[[ethyl-1-hydrogen-benz Methyl] imino] bisethanol, 2,2 '- [[[methyl hydrogen-benzotriazol- Methyl] imino] biscarboxylic acid, 2,2 '- [[[methyl-1-hydrogen-benzotriazol- Methyl-1-hydrogen-benzotriazole, 6-methyl-4, 5-dihydro- 5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 4-methyl-4,5,6,7-tetrahydro-1H benzo [1,2,3] triazole, 5 -Methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H- benzo [ 2,3] triazole, 4,6-dimethyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole, 5-methyl-1-hydrogen-benzotriazole, 2 Dimethylphenol, 2,4,6-trimethylphenol, 2,6-diethylphenol, 2,6-diethyl-4-methylphenol, 2,6-dipropylphenol, 2,6- 4-methylphenol, 2,6-di-t-butylphenol, 2,4,6-tri- t-butylphenol, and 2,6-di-t-butyl-4-methylphenol.
(a) 아미노 알킬 실란계 화합물 0.001 내지 3.0 중량%;
(b) 알칸올 아민 화합물 0.1 내지 20.0 중량 %; 및
(c) 극성 유기용매 80.0 내지 99.8중량 % 을 포함하는, 레지스트 박리액 조성물.
3. The composition of claim 1 wherein, relative to the total weight of the composition,
(a) 0.001 to 3.0% by weight of an aminoalkylsilane compound;
(b) 0.1 to 20.0% by weight of an alkanolamine compound; And
(c) 80.0 to 99.8% by weight of a polar organic solvent.
(d) 부식방지제 0.001 내지 1.0 중량%을 더 포함하는 레지스트 박리액 조성물.
11. The method of claim 10,
(d) 0.001 to 1.0% by weight of a corrosion inhibitor.
A method of manufacturing a display substrate comprising the step of cleaning a display substrate using the resist stripping liquid composition according to any one of claims 1 to 4.
A display substrate manufactured by the manufacturing method of claim 12.
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