KR101970039B1

KR101970039B1 - Resist stripper composiotion

Info

Publication number: KR101970039B1
Application number: KR1020150110595A
Authority: KR
Inventors: 김정현; 김성식; 이유진
Original assignee: 동우 화인켐 주식회사
Priority date: 2015-01-22
Filing date: 2015-08-05
Publication date: 2019-04-17
Also published as: KR20160090729A

Abstract

The present invention relates to a resist stripper composition, and more particularly, to a resist stripper composition that minimizes corrosion of metal wiring in a stripping process, and has excellent resist removal performance and substrate processing count.

Description

RESIST STRIPPER COMPOSITION [

The present invention relates to a resist stripper composition, and more particularly, to a resist stripper composition having excellent stripping ability while minimizing corrosion of a metal wiring in a resist stripping step.

Resists (photoresists) are materials that are essential for photolithography processes, and these photolithography processes can be applied to integrated circuits (ICs), large scale integration (LSI) large scale integration (VLSI), and image forming devices such as a liquid crystal display (LCD) and a plasma display device (PDP).

2. Description of the Related Art In recent years, a liquid crystal display device has been required to have a high resolution and to increase the signal speed in wiring. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing.

After the photo-lithography processing, the resist is removed at a high temperature by the remover solution, and the resist may be removed at such a high temperature, causing the metal film on the bottom to corrode rapidly by the remover solution. As a result, a significant level of exfoliation characteristics are required with respect to, for example, the ability to remove etch residues after etching and the corrosion inhibition against metal wiring. In particular, corrosion resistance to copper as well as aluminum is also required, and in order to secure price competitiveness, economical efficiency such as improvement of the number of processed substrates is also required.

Generally, water-soluble organic amines such as monoethanolamine, monoisopropanolamine, and organic solvents such as gamma-butyllactone and DMSO are used to remove the resist. In addition, various types of corrosion inhibitors such as catechol, resorcinol, and benzotriazole are generally used to inhibit metal corrosion caused by amines, and a photoresist stripper composition containing the same has been proposed.

However, conventional photoresist stripper liquid compositions are known to have problems in terms of corrosion performance, the number of processes, the process, or storage stability. For example, Korean Patent Laid-Open No. 10-2006-0117666 requires two or more kinds of corrosion inhibitors to prevent corrosion of metal wiring. Therefore, there is a problem that the possibility of residual in the wiring after the peeling step is high, and also the performance of the peeling solution is deteriorated, such as occurrence of discoloration of the peeling solution and prolongation of the peeling time.

Korean Patent Publication No. 10-2006-0117666

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art,

It is an object of the present invention to provide a resist stripping liquid composition which is excellent in corrosion resistance against metal wiring such as aluminum and copper in a resist stripping step and has excellent resist removing ability.

It is also an object of the present invention to provide a resist stripping liquid composition having a large number of processed substrates and excellent rinsing power in a rinse process.

According to an aspect of the present invention,

N-ethyl formamide (A); And

There is provided a resist stripper composition comprising an amine compound (B) represented by the following formula (1).

[Chemical Formula 1]

Wherein R 1 and R 2 are each independently a C 1 to C 5 alkyl group, a C 1 to C 5 hydroxyalkyl group, or a C 1 to C 5 aminoalkyl group,

R 1 and R 2 may form a ring which may further contain N or O.

The resist stripper composition of the present invention has an excellent resist removing effect and can effectively remove resist residues and does not damage metal wiring such as aluminum and / or copper during the stripping process and provides an effect of minimizing corrosion . In addition, since it is possible to process a large number of substrates, it contributes greatly to cost reduction.

Hereinafter, the present invention will be described in more detail.

According to the present invention,

N-ethyl formamide (A); And

[Chemical Formula 1]

R 1 and R 2 may form a ring which may further contain N or O.

Hereinafter, each component will be described in detail.

(A) N- Ethyl formamide

The resist stripping composition of the present invention comprises N-ethyl formamide (A). The N-ethylformamide serves to dissolve the resist polymer gelled by the amine compound (B) of the following formula (1). Furthermore, since it shows water solubility, it facilitates the removal of the resist stripping solution during rinsing with deionized water and minimizes the re-adsorption and re-adhesion of the stripping solution and the dissolved resist. The N-ethyl formamide enables an excessive amount of resist dissolution to improve the number of processed substrates. Further, since the boiling point is 200 ° C or more, it is economical since it has low volatility and can reduce the amount of the exfoliation liquid which is lost in the process over a long period of time.

When the N-ethylformamide (A) is mixed with an amine compound other than the amine compound (B) of the formula (1) of the present invention, there is a problem in that the resist stripping force is deteriorated with time. However, when it is used together with the amine compound of the formula (1) of the present invention, there is no deterioration of peeling force with time, and it is possible to secure a peeling force with a small amount.

The content of the N-ethylformamide (A) is not particularly limited and is preferably 10 to 99.9% by weight, more preferably 50 to 99% by weight, based on the total weight of the resist stripper composition. have. When the content is less than 10% by weight, the resist solubility is lowered and it is difficult to improve the number of treatments. On the other hand, when the content exceeds 99.9% by weight, the content of other constituents is relatively small.

(B) Amine compound

The resist stripping composition of the present invention comprises an amine compound (B) represented by the following general formula (1).

[Chemical Formula 1]

R 1 and R 2 may form a ring which may further contain N or O.

The amine compound (B) of the formula (1) strongly penetrates into the polymer matrix of the resist or crosslinked resist under various process conditions such as dry or wet etching, ashing or ion implant processing It serves to break bonds existing in the molecule or between molecules. In addition, an empty space may be formed in a structurally weak portion in the resist remaining on the substrate, so that the resist can be easily removed by deforming the resist into an amorphous polymer gel lump state.

When the amine compound (B) of the above formula (1) is used together with the above-mentioned N-ethyl formamide (A), there is no problem of degradation of the peeling force unlike the case of using only the primary amine compound. Therefore, it is possible to provide a resist stripping solution having excellent stripping force.

Specific examples of the amine compound of Formula 1 include N, N-dimethylamine, N, N-diethylamine, N, N-dipropylamine, diethylenetriamine, 2- (hydroxymethyl) aminoethanol, 2 N-diethanolamine, piperidine, piperazine, N- (2-aminoethyl) methanolamine, N- (2-aminoethyl) ethanol Amine, N- (2-aminoethyl) propanolamine, N- (2-aminoethyl) butanolamine, N- (3-aminopropyl) ethanolamine and the like. More than species can be used.

The amine compound (B) of Formula 1 is preferably contained in an amount of 0.1 to 10% by weight, and more preferably 0.3 to 5% by weight based on the total weight of the resist stripper composition. When the content of the amine compound of Formula 1 is less than 0.1% by weight, it is difficult to ensure rapid peeling performance due to a decrease in the peeling force of the resist stripping solution. On the other hand, if it exceeds 10% by weight, it may cause corrosion of metal wiring.

The resist stripper composition of the present invention may further contain at least one selected from the corrosion inhibitor (C), the polar solvent (D), and deionized water (E) in addition to the above components.

The corrosion inhibitor (C) is contained in the resist stripper composition to improve the ability to prevent corrosion of metal wiring such as aluminum and / or copper. In addition, in the rinsing process, the resist residue is prevented from being re-adsorbed to improve the rinsing force. The corrosion inhibitor is not particularly limited, but may preferably be a tertiary amine corrosion inhibitor of the following formula (2).

(2)

In the general formula (2), R 3 to R 5 each independently represent a hydroxy group, a C 1 to C 5 alkyl group, or a C 1 to C 5 hydroxyalkyl group.

More preferably, at least one selected from R 3 to R 5 in the above formula (2) is a hydroxy group or a hydroxyalkyl group. In this case, the volatility of the resist stripper composition is lowered, and the stability and economy of the resist stripper can be provided even during prolonged use.

Specific examples of the tertiary amine corrosion inhibitor of Formula 2 include N-methyldiethanolamine, dimethylethanolamine, triethanolamine, N, N-diethylhydroxylamine, N, N-diethylethanolamine and 3-dimethylamino -1-propanol, and the like, but not limited thereto, and one or more species selected therefrom can be used.

The resist stripper composition of the present invention may further contain, as the corrosion inhibitor (C), a corrosion inhibitor other than the tertiary amine corrosion inhibitor of the above formula (2). As specific examples of the above-mentioned other corrosion inhibitors,

Monocarboxylic acids such as formic acid, acetic acid, and propionic acid;

Dicarboxylic acids such as acetic acid, malic acid, malonic acid, succinic acid, gluconic acid, adipic acid, pimelic acid, maleic acid, fumaric acid and glutaconic acid;

Tricarboxylic acids such as trimellitic acid and tricarvaleric acid;

Organic acids such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxycarboxylic acid;

Maleic amide esters, maleic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, Organic acid amide esters such as tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters,

2,2 '- [[[[[benzotriazole] methyl] imino] bisethanol, 2,2' - [[[methyl-1-hydrogen-benzotriazole Yl] methyl] imino] bisethanol, 2,2 '- [[[ethyl-1-hydrogen-benzotriazol- Methyl-imino] biscarboxylic acid [methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol and 2,2 '- [[ Methyl] imino] bismethylamine and 2,2 '- [[[amine-1-hydrogen-benzotriazol-1-yl] Methyl] -4,5-dihydro-1H-benzo [1,2,3] triazole, 4 Methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro- 3] triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 4,6-dimethyl-4,5,6,7-tetra Hydro-1H-benz [1, 2,3] triazole and 5-methyl-1-hydrogen-azole compounds such as benzotriazole;

2,6-dimethylphenol, 2,4,6-trimethylphenol, 2,6-diethylphenol, 2,6-diethyl-4-methylphenol, 4-methylphenol, 2,6-di-t-butylphenol, 2,4,6-tri-t-butylphenol and 2,6- ; But is not limited thereto. These may be used singly or in combination of two or more.

The corrosion inhibitor (C) is preferably contained in an amount of more than 0 to 5% by weight, and more preferably 0.001 to 3% by weight based on the total weight of the resist stripper composition of the present invention. If it is included in the range as described above, it is possible to prevent corrosion occurring in aluminum or aluminum alloy, copper or copper alloy, and other metal wiring not limited thereto in peeling or DIW (Deionized water) rinsing process, .

Examples of the polar solvent (D) include a protonic polar solvent and an aprotic polar solvent, which may be used alone or in combination. The polar solvent serves to dissolve the resist polymer gelled with the above-mentioned N-ethyl formamide, and increases the dissolution rate of the swollen and dispersed resist. In the DIW rinse process after the resist peeling, removal of the peeling liquid by water is facilitated, and re-adsorption and reattaching of the peeling liquid and the resist are minimized. That is, by helping to strengthen the rinse force, the DIW rinse process time can be shortened and the effect of the residual foreign matter can be eliminated.

In addition, one of the problems that may appear in the metal film quality is to solve the problem of staining caused by stain removal because the DIW rinse process is cleanly removed when a quantitative polar solvent is added. It is preferable that the polar solvent is not too high or low in boiling point for proper peeling force and can be used in combination.

Preferable examples of the protonic polar solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, di Ethylene glycol monomethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene Alkylene glycol monoalkyl ethers such as glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether;

Alkylene glycol dialkyl ethers such as ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, and triethylene glycol dimethyl ether;

Alcohols such as polyethylene glycol, polypropylene glycol, 4-hydroxymethyl-1,3-dioxolane, 4-hydroxymethyl-2,2-dimethyl-1,3-dioxolane and tetrahydrofurfuryl alcohol;

Alkylene glycol alkyl ether acetates such as propylene glycol monomethyl ether acetate; These may be used singly or in combination of two or more.

On the other hand, the aprotic polar solvent serves to dissolve the resist polymer gelled by the amine compound (B) of the above formula (1) and smoothly disperses the photoresist to solvation. The aprotic polar solvent is an organic solvent which is highly effective in dissolving photoresist, and is a component for improving the peeling performance by accelerating the penetration of the amine compound of the formula (1) into the solidified photoresist.

Preferable examples of the aprotic polar solvent include pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethyl sulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; Carbonate compounds such as dimethyl carbonate, ethylene carbonate, and the like; N-dimethylacetamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N- Ethyl) acetamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, 3-butoxy- . These compounds may be used alone or in admixture of two or more.

In the present invention, the content of the polar solvent is not particularly limited, but it is usually 5 to 85% by weight, more preferably 10 to 70% by weight based on the total weight of the resist stripper composition. If the content is less than 5% by weight, there is a problem that the ability to contain dissolved resist in the solution falls and the ability to treat the substrate is deteriorated. On the other hand, when the content exceeds 85% by weight, the content of other components is reduced, causing damage and adversely affecting the peeling force.

The deionized water (E) is added to the N-ethyl formamide (A) and the polar solvent (D) to increase the removal rate by promoting the activation of the amine compound (B) It is possible to quickly and completely remove the organic contaminants remaining on the substrate and the resist stripping solution.

In the present invention, the content of the deionized water is preferably from more than 0 to 50% by weight, more preferably from 5 to 30% by weight based on the total weight of the resist stripper composition. If the content of deionized water exceeds 50% by weight, the dissolution capacity of the resist may be reduced to cause a decrease in the number of treatments, and corrosion of the metal wiring may occur if the substrate is immersed for a long time.

The resist stripper composition of the present invention can be prepared by mixing the above-mentioned compounds with a certain amount, and the mixing method is not particularly limited, and various known methods can be applied within the scope of the invention. have.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the scope of the present invention is not limited by the following examples and comparative examples.

< Example And Comparative Example >

Example 1 to 13 and Comparative Example 1 to 8: Resist Preparation of release liquid composition

The ingredients and the contents shown in Table 1 below were mixed to prepare a resist stripper composition.

(Unit: wt%) division N-ethyl formamide
(A) Amine compound
(B) Corrosion inhibitor
(C) Polar solvent
(D) Deionized water
(E) Example 1 99.5 AEEA 0.5 - - - - - Example 2 96 AEEA One MDEA 3 - - - Example 3 92 APEA 5 TEA
DEHA 2
One - - - Example 4 94.9 AEEA 3 DMEA
BTA 2
0.1 - - - Example 5 45.9 MAE 3 MDEA
MTBT One
0.1 EDG 50 Example 6 77.9 HMAE One MDEA
MTBT One
0.1 EDG 20 Example 7 76.9 PRZ 2 MDEA
MTBT One
0.1 EDG 20 Example 8 83.9 AEEA 3 DEHA
TTA 3
0.1 NMP 10 - Example 9 54.9 AEEA 3 MDEA
TTA 2
0.1 NMF
MDG 20
20 - Example 10 14.9 AEEA 5 MDEA
MTBT 2
0.1 HMDM
THFA 18
60 - Example 11 67.9 AEEA One MDEA
DMTBT One
0.1 HMDM
EDG 10
20 - Example 12 55.9 AEEA 3 MDEA
TTA One
0.1 HMDM 10 30 Example 13 14.9 AEEA 13 MDEA
MTBT 2
0.1 HMDM
THFA 14
56 - Comparative Example 1 94.5 MEA 5 TTA 0.5 - - - Comparative Example 2 84.5 AEE 5 TTA 0.5 NMP 10 - Comparative Example 3 33.5 MIPA 5 MDEA
TTA One
0.5 NMP
MDG 10
50 - Comparative Example 4 - AEEA 5 TTA 0.5 MDG 94.5 - Comparative Example 5 - AEEA 5 TTA 0.5 DMAc
MDG 70
24.5 - Comparative Example 6 - AEEA 5 MDEA
TTA One
0.5 DEF
MDG 70
23.5 - Comparative Example 7 - AEEA 5 TTA 0.5 DMPA 94.5 - Comparative Example 8 - AEEA 5 TTA 0.5 NMF 94.5 -

Note) In Table 1,

AEEA: N- (2-aminoethyl) ethanolamine

APEA: N- (3-aminopropyl) ethanolamine

MAE: 2- (methylamino) ethanol

HMAE: 2- (hydroxymethyl) aminoethanol

PRZ: Piperazine

MEA: Monoethanolamine

AEE: 2- (2-aminoethoxy) ethanol

MIPA: Mono isopropanolamine

MDEA: N-methyldiethanolamine

TEA: triethanolamine

DEHA: N, N-diethylhydroxylamine

DMEA: N, N-dimethylethanolamine

BTA: benzotriazole

TTA: Tolythriazole

MTBT: 4-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

DMTBT: 5,6-Dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

NMP: N-methylpyrrolidone

NMF: N-methylformamide

MDG: diethylene glycol monomethyl ether

HMDM: 4-hydroxymethyl-2,2-dimethyl-1,3-dioxolane

THFA: tetrahydroperfuryl alcohol

EDG: diethylene glycol monoethyl ether

DMAc: N, N-dimethylacetamide

DEF: N, N-diethylformamide

DMPA: N, N-dimethylpropionamide

< Experimental Example > Resist Evaluation of the characteristics of the release liquid composition

Experimental Example One. Peel force evaluation

In order to evaluate the peeling effect of the resist stripping liquid compositions of Examples 1 to 13 and Comparative Examples 1 to 8, the following experiment was conducted.

In accordance with a conventional method, a resist was coated on a glass substrate using a spin coater. The substrate coated with the resist was hard baked at 170 DEG C for 10 minutes to prepare a specimen of 2 cm x 2 cm. The peeling force was evaluated by observing the peeling liquid composition at a constant temperature of 50 캜 and observing the time of peeling the test piece by immersion. The results are shown in Table 2 below.

◎: Less than 3 minutes of resist removal time

○: Resist removal time 3 to 5 minutes or less

DELTA: Resist removal time Less than 5 to 8 minutes

×: Resist removal time of 8 minutes or more

Experimental Example 2. By time Peel force Maintenance evaluation

In order to evaluate the maintenance of the peeling force of the resist stripping solution composition, the following experiment was conducted.

The resist stripping solution was stored for 10 days at room temperature in the same manner as in Examples 1 to 13 and Comparative Examples 1 to 8, and the stripping force was evaluated. The degree of maintaining the peel force was evaluated by observing the time that the substrate used in Experimental Example 1 was immersed in the resist stripper composition kept constant at 50 캜 and peeled off. The results are shown in Table 2 below.

◎: Less than 3 minutes of resist removal time

○: Resist removal time 3 to 5 minutes or less

DELTA: Resist removal time Less than 5 to 8 minutes

×: Resist removal time of 8 minutes or more

Experimental Example 3. Metal wiring Corrosion resistance evaluation

In order to evaluate the corrosion inhibiting ability of the resist stripping composition of Examples 1 to 13 and Comparative Examples 1 to 8 on metal wiring, the following experiment was conducted.

The evaluation of corrosion resistance was performed using a substrate on which Mo / Al / Mo and Cu / Ti wiring lines were exposed. The temperature of the resist stripping solution composition was kept constant at 50 占 폚 and the substrate was immersed for 30 minutes. Thereafter, washing and drying were performed, and a damping force was evaluated using a scanning electron microscope (SEM, Hitach S-4700). The results are shown in Table 2 below.

◎: Very good

○: Good

△: Normal

X: Bad

Experimental Example 4. solvency Evaluation (number of processing)

In order to evaluate the dissolution (treatment number) of the resist stripper compositions of Examples 1 to 13 and Comparative Examples 1 to 8, the following experiment was carried out.

5% by weight of solidified photoresist (PR) was added to the resist stripper composition and dissolved at 300 rpm for 30 minutes. The remaining amount of PR was filtered through a filter paper to measure its weight and calculate the degree of dissolution. When 5 wt% of the photoresist is completely dissolved and the remaining amount is not measured, it is 100%. As the amount of the photoresist is higher, the photoresist can be melted and the number of treatments is higher. The results are shown in Table 2 below.

Experimental Example 5. Rinse power evaluation

After the peeling step was carried out, the degree of staining due to the contact between the peeling solution and the deionized water in which the resist remaining on the substrate was dissolved was checked and the rinse power was evaluated in the following manner.

The substrate with the resist patterned thereon was prepared, and the substrate was immersed in the 50 DEG C exfoliant composition of Examples 1 to 13 and Comparative Examples 1 to 8 for 5 minutes, followed by pulling out, followed by deionized water contact and left for 1 minute, And washed with ionized water for 1 minute. After cleaning, the substrate was thoroughly dried with nitrogen to remove deionized water remaining on the substrate, and the degree of staining was confirmed using a halogen lamp. The results are shown in Table 2 below.

◎: Very good

○: Good

△: Normal

X: Bad

Experimental Example 6. Evaluation of volatility

Experiments were conducted as follows to evaluate the extent to which volatilization and disappearance of the resist stripping solution by prolonged use was possible.

The peeling liquid compositions prepared in Examples 1 to 13 and Comparative Examples 1 to 8 were kept at a constant temperature of 50 캜 for 24 hours, and the amount of volatilization was measured to calculate the degree of disappearance and volatility. The lower the numerical value, the lower the degree of disappearance, and the loss in the process can be reduced, so that the stability and economical efficiency of the resist stripping solution can be achieved. The results are shown in Table 2 below.

Volatility (%) = {(mass of initial resist stripper liquid) - (mass of resist stripper liquid after 24 hours) / initial resist stripper mass} * 100

division Peel force Retaining force Corrosion resistance solvency
(%) Rinse power Volatility
(%) Al Mo Cu Ti Example 1 ○ ○ ○ ◎ ○ ◎ 95.2 ○ 2.4 Example 2 ○ ○ ◎ ◎ ◎ ◎ 95.3 ◎ 2.3 Example 3 ◎ ◎ ◎ ◎ ◎ ◎ 94.5 ◎ 2.2 Example 4 ◎ ◎ ◎ ◎ ◎ ◎ 94.0 ◎ 2.2 Example 5 ◎ ◎ ◎ ◎ ◎ ◎ 92.6 ◎ 2.6 Example 6 ◎ ◎ ◎ ◎ ◎ ◎ 93.9 ◎ 2.1 Example 7 ◎ ◎ ◎ ◎ ◎ ◎ 94.3 ◎ 2.6 Example 8 ◎ ◎ ◎ ◎ ◎ ◎ 93.6 ◎ 2.1 Example 9 ◎ ◎ ◎ ◎ ◎ ◎ 94.9 ◎ 2.2 Example 10 ◎ ◎ ◎ ◎ ◎ ◎ 88.3 ◎ 3.5 Example 11 ○ ○ ◎ ◎ ◎ ◎ 93.4 ◎ 2.3 Example 12 ◎ ◎ ◎ ◎ ◎ ◎ 89.2 ◎ 20.4 Example 13 ◎ ◎ ○ ◎ ○ ◎ 88.3 ◎ 3.5 Comparative Example 1 ◎ X X ◎ X ◎ 94.5 X 2.9 Comparative Example 2 ○ X X ◎ △ ◎ 93.6 X 2.3 Comparative Example 3 ○ X △ ◎ ○ ◎ 88.6 ○ 2.9 Comparative Example 4 △ △ △ ◎ △ ◎ 64.2 ○ 3.5 Comparative Example 5 △ △ △ ◎ △ ◎ 92.5 △ 36.0 Comparative Example 6 △ △ △ ◎ ○ ◎ 93.5 ○ 33.5 Comparative Example 7 △ △ △ ◎ △ ◎ 89.4 X 32.6 Comparative Example 8 △ △ △ ◎ △ ◎ 93.5 X 2.1

As shown in the experimental results of Table 2, in the case of the resist stripping liquid compositions of Examples 1 to 13 of the present invention, the peeling force and the degree of peeling force maintenance were both found to be suitable levels. It was confirmed that the dissolution, rinse power and volatility evaluation to evaluate the number of treatments were also excellent. In the evaluation of the corrosion resistance of the metal wiring, it was confirmed that the corrosion resistance of Al, Mo, Cu and Ti was excellent.

On the other hand, the peeling liquid compositions of Comparative Examples 1 to 8 were inferior or inferior in the degree of peeling force and peeling force maintenance. It was also confirmed that the corrosion inhibiting ability of the metal wiring was particularly poor for Al and Cu wiring. As a result of evaluation of the number of treatments, in Comparative Example 4, the dissolution power was 80% or less, which was particularly bad. The results of the rinse power and volatility evaluation were not as good as those of the examples, and some of them were not particularly suitable.

Claims

N-ethyl formamide (A); And
N, N-diethylamine, N, N-dipropylamine, diethylenetriamine, 2- (hydroxymethyl) aminoethanol, 2- Aminoethyl) ethanolamine, N, N-diethanolamine, piperidine, piperazine, N- (2-aminoethyl) methanolamine, N- Amine and an N- (3-aminopropyl) ethanolamine.

The method according to claim 1,
The resist stripping liquid composition according to claim 1, further comprising a corrosion inhibitor (C).

The method according to claim 1,
Resist stripper solution Composition weight
10 to 99.9% by weight of the N-ethyl formamide (A); And
0.1 to 10% by weight of the amine compound (B); Wherein the resist stripping liquid composition is a resist stripper composition.

The method of claim 2,
Wherein the corrosion inhibitor (C) is a tertiary amine corrosion inhibitor represented by the following formula (2).

(2)

The method of claim 2,
With respect to the weight of the resist stripping solution composition,
Further comprising 0% by weight to 5% by weight of the corrosion inhibitor.

The method according to claim 1,
A polar solvent, and a deionized water.

The method of claim 4,
Wherein the composition further comprises a corrosion inhibitor other than the tertiary amine corrosion inhibitor of Formula 2 above.

The method of claim 6,
With respect to the weight of the resist stripping solution composition,
And 5 to 85% by weight of the polar solvent.

The method of claim 6,
With respect to the weight of the resist stripping solution composition,
Further comprising 0 wt% to 50 wt% of the deionized water.

The method of claim 7,
Wherein the other corrosion inhibitor is at least one selected from organic acids, organic acid amide esters, azole compounds, and symmetrical phenol compounds.

The method of claim 6,
Wherein the polar solvent is selected from the group consisting of alkylene glycol monoalkyl ether, alkylene glycol dialkyl ether, alcohols, alkylene glycol alkyl ether acetates, pyrrolidone compounds, imidazolidinone compounds, lactone compounds, sulfoxide compounds, A carbonate compound, and an amide compound.