KR20090121650A - Resist stripper composition and a method of stripping resist using the same - Google Patents

Abstract

PURPOSE: A resist stripper composition is provided to ensure removal capacity of resist residues, dry and wet etching residue strippability, corrosion resistance of wiring containing aluminium or copper, excellent profitability by reducing the used amount of expensive solvent. CONSTITUTION: A resist stripper composition comprises (a) a basic compound, (b) an amide compound represented by chemical formula 1, (c) a polar solvent, (d) a hydroxybenzene compound, and (e) water. In chemical formula 1, R1, R2 and R3 are hydrogen, C1-10 alkyl group, C1-10 hydroxyalkyl group, carboxyl group, C1-10 alkyl group substituted with C1-10 alkoxy group, or an amino group substituted or unsubstituted with C1-4 alkyl group, wherein the R1 and R2 can together form a ring.

Description

Resist stripper composition and a method of stripping resist using the same

The present invention relates to a resist stripper composition and a resist stripping method using the same, and more particularly, to a resist stripper composition capable of effectively removing resist patterns and etching residues without damaging metal wiring such as aluminum, and the like. The peeling method of the resist used is related.

Recently, as the demand for high resolution is gradually increased, flat panel display devices continue to make efforts to increase the number of pixels per unit area. This gradually entails a reduction in the wiring width of the thin film transistor, and in order to cope with such miniaturization of the wiring, a dry etching process is introduced.

For this reason, the required performance for the stripping liquid used in the stripping process, which is a resist removal step, after the metal pattern is completed, is also increasing. In particular, as the removal ability of the etching residue and the wiring width become narrower after the dry etching process, the wiring becomes more susceptible to the effects of corrosion, and therefore, the ability to suppress the corrosion of the stripping solution against the metal wiring is required. The retention of is emerging as an important criterion in the selection of the peeling liquid.

In addition, recently, in order to secure a price competitiveness of the flat panel display device, the price competitiveness of the component materials used for manufacturing the flat panel display device is also very important. Therefore, in developing a resist stripper composition, it is required to develop a water based type stripper that can reduce the content of a conventional expensive solvent.

In response to the demands of the industry as described above, techniques for suggesting solutions for the removal of resist and etch residues modified by harsh process conditions and corrosion inhibition for metal wiring have been disclosed, and the representative ones are as follows.

Modified, hardened Resist  Example of how to uninstall

Korean Patent Laid-Open Publication No. 10-2004-0098751 discloses that, in addition to a water-soluble organic amine, a polar solvent, and a corrosion inhibitor, a peeling accelerator may be applied to remove the modified and cured resist at high temperature and low temperature in a short time.

Korean Patent Laid-Open Publication No. 10-2006-0024478 applies a photoresist stripper composition comprising a cyclic amine, a solvent, a corrosion inhibitor and a stripping accelerator, so that even if the isopropyl alcohol (IPA) rinse process is omitted, there is no additional corrosion on the metallization. In particular, the technique which can greatly improve peeling force is proposed.

Japanese Laid-Open Patent Publication JP2006072083A discloses a technique that can be peeled around at room temperature not only for a conventional resist but also for a thermoset resist by using a phosphate ester and dissolved ozone.

However, in the case of the Republic of Korea Patent Publication No. 10-2003-0030987, the corrosion inhibitory effect of the metal wiring is insufficient, and in the case of Republic of Korea Patent Publication No. 10-2006-0024478 is produced under the harsh conditions such as dry etching residue by using a cyclic amine The peeling force of the resist is insufficient, and in the case of JP2006072083A, in addition to the peeling force of the phosphate ester itself, a technique of removing the resist cured by the strong oxidizing power of dissolved ozone is proposed. Ozone has a high possibility of causing corrosion of the lower metal film.

Example Proposing Corrosion Protection Method for Metal Membranes

Korean Patent No. 10-0297893 discloses that corrosion of a metal can be suppressed by neutralizing the amine using a weak acid having a pK value of 2 or more in the nucleophilic amine.

Japanese Patent Laid-Open No. 4-124668 discloses a stripper composition composed of an organic amine, a phosphate ester surfactant, 2-butyne-1,4-diol, diethylene glycol dialkyl ether and aprotic polar solvents.

Japanese Patent Laid-Open No. 9-152721 discloses a stripper composition containing an alkanol amine, hydroxyl amine, diethylene glycol monoalkyl ether, a sugar compound such as sorbitol as an anticorrosive and water.

Japanese Patent Laid-Open No. 2000-232063 proposes to use phosphoric acid and ammonium phosphate as corrosion inhibitors, but the application process is not only for removing resist residues, but also the pH of the composition used is used in an acidic range.

However, the stripper compositions proposed in Korean Patent Registration No. 10-0297893, Japanese Patent Laid-Open No. Hei 4-124668, and Japanese Patent Laid-Open No. Hei 9-152721 are used in a peeling force and an etching process for a photoresist film deteriorated and cured by a harsh process. The removal power of the etching residue produced by the reaction with the resist and the metallic by-products is not sufficient, and Japanese Patent Laid-Open No. 2000-232063 proposes phosphoric acid and ammonium phosphate as corrosion inhibitors, but a low pH is more effective for removing the residue of resist. It is difficult to be compatible with the corrosion protection of metal wiring.

The present invention is to solve the problems of the prior art, as well as excellent in the resist residue, dry and wet etch residue removal ability and corrosion resistance of the wiring including aluminum or copper, as well as the use of expensive solvents It is an object of the present invention to provide a resist stripper composition having excellent economy and a method for stripping a resist using the same.

The present invention provides a resist stripper composition comprising (a) a basic compound, (b) an amide compound represented by the following formula (1), (c) a proton polar solvent, (d) a hydroxy benzene compound, and (e) water. to provide.

Wherein R1, R2, and R3 are each independently hydrogen, a C1-C10 alkyl group, a C1-C10 hydroxy group alkyl group, a carboxyl group, a C1-C10 alkyl group substituted with a C1-C10 alkoxy group, or a carbon number It is an amino group unsubstituted or substituted by the alkyl group of 1-4, The said R1 and R2 may form a ring together.

In addition, the present invention

(I) depositing a conductive metal film on a flat panel display substrate,

(II) forming a resist film on the conductive metal film;

(III) selectively exposing the resist film;

(IV) developing the resist film after exposure to form a resist pattern;

(V) etching the conductive metal film using the resist pattern as a mask; And

(VI) after the etching process, the resist pattern and the resist modified and cured by etching provides a method for removing the resist comprising the step of peeling from the substrate using the resist stripper composition of the present invention.

The resist stripper composition of the present invention is excellent in removing resist residues, dry and wet etch residues, and corrosion resistance of wirings including aluminum or copper, and thus is applied to the manufacturing process of a flat panel display to which a fine pattern is applied to realize high resolution. Application is possible. In addition, the resist stripper composition according to the present invention provides a cost saving effect because the use of expensive solvents is reduced and the economy is excellent.

The present invention provides a resist stripper composition comprising (a) a basic compound, (b) an amide compound represented by the following formula (1), (c) a protonic polar solvent, (d) a hydroxy benzene compound, and (e) water. It is about.

[Formula 1]

Wherein R1, R2, and R3 are each independently hydrogen, a C1-C10 alkyl group, a C1-C10 hydroxy group alkyl group, a carboxyl group, a C1-C10 alkyl group substituted with a C1-C10 alkoxy group, or a carbon number It is an amino group unsubstituted or substituted by the alkyl group of 1-4, The said R1 and R2 may form a ring together.

Hereinafter, the present invention will be described in detail.

The (a) basic compound included in the resist stripper composition of the present invention may be altered or crosslinked under various process conditions such as dry etching or wet etching, ashing, or ion implantation processing. It penetrates strongly into the polymer matrix of the resist, thereby breaking the bonds present in or between molecules. This action of the basic compound forms an empty space in the structurally weak portion of the resist remaining on the substrate, thereby transforming the resist into an amorphous polymer gel mass so that the resist attached to the substrate can be easily removed. .

The basic compound includes an inorganic basic compound and an organic basic compound. For example, inorganic basic compounds include hydroxide salts, and organic basic compounds include primary amines, secondary amines, tertiary amines, cyclic amines, and alkanol amines, which are used alone or in combination of two or more. Can be used.

Preferred examples of the inorganic basic compound include hydroxide salts such as ammonium hydroxide, sodium hydroxide and potassium hydroxide, and examples of the organic basic compound include tetramethylammonium hydroxide; Methylamine, ethylamine, monoisopropylamine, 2- (2-aminoethoxy) ethanol Primary amines such as; Secondary amines such as diethylamine, diisopropylamine and dibutylamine; Tertiary amines such as trimethylamine, triethylamine, triisopropylamine and tributylamine; Piperazine, 1,4-dimethylpiperazine, 1,4-diethylpiperazine, 1- (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (2-hydroxy Ethyl) -4-methylpiperazine, N- (3-aminopropyl) morpholine, 2-methylpiperazine, 1-methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1- Cyclic amines such as phenylpiperazine; Choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyl diethanolamine, dimethylaminoethanol, di Ethylaminoethanol, nitrilotriethanol, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) -1-ethanol, 1-amino-2-propanol, 2-amino-1-propanol, 3 Alkanolamines such as -amino-1-propanol, 4-amino-1-butanol and dibutanolamine

Among these, ammonium hydroxide, tetramethylammonium hydroxide, monoethanolamine, 1-amino- 2-propanol, and the like are more preferable.

The basic compound may be used alone or in combination of two or more.

In addition, the basic compound is preferably contained 5 to 30% by weight based on the total weight of the composition. When included in the content range as described above, it is advantageous for the expression of the resist stripping effect, and at the same time, it is also advantageous for the expression of corrosion protection for metal wirings including aluminum or copper.

(B) The amide compound represented by the formula (1) included in the resist stripper composition of the present invention is a strong alkaline aprotic polar solvent, and is very effective in dissolving and dissolving resist polymers deteriorated or crosslinked by dry etching.

[Formula 1]

Wherein R1, R2, and R3 are each independently hydrogen, a C1-C10 alkyl group, a C1-C10 hydroxy group alkyl group, a carboxyl group, a C1-C10 alkyl group substituted with a C1-C10 alkoxy group, or a carbon number It is an amino group substituted or unsubstituted by the alkyl group of 1-4, R <1> and R <2> may form a ring together.

Specific examples of the amide compound represented by Formula 1 include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, and N- ( 2-hydroxyethyl) acetamide, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N- Dimethyl propionamide, 3-butoxy-N, N-dimethylpropionamide, and the like, and more preferably N-methylformamide, N, N-dimethylformamide, N-methylacetamide, N, N- Dimethyl acetamide, etc. are mentioned. These may be used alone or in combination of two or more.

The content of the amide compound represented by Formula (b) 1 is preferably 10 to 60% by weight based on the total amount of the composition. When included in the content range as described above, it is advantageous for the exfoliation effect of the resist deteriorated by the harsh process conditions, and at the same time, it is also advantageous for the development of the corrosion protection ability on the metal wiring including aluminum or copper.

Examples of the (c) proton polar solvent included in the resist stripper composition of the present invention include glycol ethers and ester derivatives of glycol ethers, and include (a) the basic compound and (b) the amide compound represented by the formula (1). Thereby dissolving the gelled resist polymer. The high boiling point also minimizes the loss of chemicals due to volatilization.

Specific examples of the (c) proton polar solvent used in the present invention include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, di Ethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether , Polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and the like. 1 species may be used alone or in combinations of two or more.

It is preferable that the said (c) proton polar solvent contains 20 to 60 weight% with respect to the total weight of the whole composition, and especially 10-60 weight% is more preferable. When included in the content range as described above, it is advantageous for the expression of the ability to dissolve the gelled polymer due to the basic compound and the amide compound, and at the same time, it is also advantageous for the expression of the removal performance of the modified or crosslinked resist polymer by etching or the like.

The (d) hydroxy benzene compound included in the resist stripper composition of the present invention serves to prevent corrosion of metal wirings including aluminum or copper. The hydroxy benzene compound forms a chelate reaction with the metal layer under the resist to prevent the hydroxyl groups generated from the stripper composition from corroding the lower metal layer.

Specific examples of the (d) hydroxy benzene compound include catechol, hydroquinone, pyrogarol, gallic acid, methyl gallate, ethyl gallate, n-propyl gallate, isopropyl gallate, n-butyl gallate, and the like. These may be used alone or in combination of two or more.

The (d) hydroxy benzene compound preferably contains 0.1 to 10% by weight, more preferably 1 to 5% by weight, based on the total weight of the total composition. When included in the content range as described above, it is advantageous for the expression of the corrosion protection of the metal wiring including aluminum or copper, and at the same time, it is also advantageous to prevent the hydroxy benzene compound from remaining on the surface of the substrate after peeling.

Although (e) water contained in the resist stripping liquid composition of this invention is not specifically limited, Deionized water or pure water is preferable. In the case of deionized water, it is preferable to use deionized water having a specific resistance value of the water (that is, the degree of removal of ions in the water) of 18 kV / cm or more. The resist stripper composition of the present invention is characterized by containing a large amount of water in order to reduce the cost and increase the activity in the stripper of the basic compound.

The water (e) is preferably contained in 5 to 50% by weight, more preferably 10 to 40% by weight relative to the total weight of the total composition. When included in the content range as described above, the basic compound activity is properly maintained, and is advantageous for the expression of the ability to remove the resist that is severely deteriorated by harsh processes such as ashing and dry etching, and at the same time relatively basic compound or polarity. The problem of lowering the peeling ability of the resist due to the decrease of the content of the solvent and the problem of increasing the corrosiveness to the metal wiring including aluminum or copper due to the excess water can be prevented.

In addition, the composition for removing a resist of the present invention may further include a sulfoxide compound in addition to the above components. The sulfoxide compound is effective for exfoliation of the modified resist on the surface of the substrate without corrosion of metal wiring.

Examples of the sulfoxide compound include dimethyl sulfoxide and sulfolane, and these may be used alone or in combination of two or more.

The sulfoxide compound is preferably included 10 to 40% by weight based on the total weight of the composition. When included in the content range as described above, there is no corrosion on the metal wiring, it is advantageous for the exfoliation effect of the resist deteriorated by the harsh process conditions.

In addition, the composition for removing a resist of the present invention may further include a surfactant in addition to the above components. The surfactant increases the wettability of the substrate to allow uniform cleaning, and increases the peeling force of the resist because it increases the penetration force between the interfaces.

Surfactants that can be used in the present invention include anionic surfactants, cationic surfactants, and nonionic surfactants, but among these, it is particularly preferable to use nonionic surfactants having excellent wettability and less foaming. .

The nonionic surfactants include polyoxyethylene alkyl ether type, polyoxyethylene alkylphenyl ether type, polyoxyethylene polyoxypropylene alkyl ether type, polyoxyethylene polyoxybutylene alkyl ether type, polyoxyethylene alkylamino Ether type, polyoxyethylene alkyl amido ether type, polyethylene glycol fatty acid ester type, sorbitan fatty acid ester type, glycerin fatty acid ester type, alkrolamide type and glycerin ester type surfactants, and these may be used alone or in combination. Two or more kinds may be used together.

The surfactant is preferably included 0.001 to 1.0% by weight based on the total weight of the composition. When included in the content range as described above, it is advantageous for uniform peeling of the substrate, and at the same time, it is advantageous for preventing the tendency of the foaming of the peeling liquid to be severe and difficult to handle.

In addition, the composition for removing a resist of the present invention further contains, in addition to the above components, a compound capable of neutralizing the hydroxyl group generated by the amine as a corrosion inhibitor, if necessary, for example, an organic acid compound, a sugar alcohol compound, or the like. These may be used alone or in combination of two or more.

The resist stripping composition of the present invention comprises (a) 5 to 30% by weight of the basic compound, (b) 10 to 60% by weight of the amide compound represented by Formula 1 above, and (c) a protonic polar solvent 10 It is preferable to contain -60%, (d) 0.1-10 weight% of hydroxy benzene compounds, and (e) 5-50 weight% of water.

The composition for removing a resist of the present invention can be prepared by mixing the above-mentioned compounds in an advantageous amount in an advantageous amount, and the mixing method is not particularly limited and various known methods can be applied without limitation.

The present invention provides a flat panel and a flat panel display device for a display, which are manufactured using the resist stripper composition.

This invention also provides the resist peeling method characterized by using the resist stripping liquid composition of this invention. The peeling method of the said resist,

(I) depositing a conductive metal film on a flat panel display substrate,

(II) forming a resist film on the conductive metal film;

(III) selectively exposing the resist film;

(IV) developing the resist film after exposure to form a resist pattern;

(V) etching the conductive metal film using the resist pattern as a mask; And

(VI) after the etching process, the resist pattern and the resist modified and cured by etching comprising the step of peeling from the substrate using the resist stripper composition of the present invention.

In the peeling method of the present invention, a dry etching process such as an etchback process or a chemical mechanical polishing (CMP) process is performed without proceeding a resist pattern forming process using a mask, and then the exposed resist film is viewed. The method of peeling with the peeling liquid composition of this invention is included.

In the above peeling method, the formation, exposure, development, etching and ashing process of the resist film can be carried out by a method commonly known in the art and are not particularly limited, and resist residues including a cured or polymer-modified resist If it is a method by which this board | substrate and peeling liquid composition can contact, a favorable peeling result can be obtained.

Types of the resist include positive and negative g-rays, i-rays and far-ultraviolet (DUV) resists, electron beam resists, X-ray resists, ion beam resists, and the like. The resist to which the composition for removing a resist of the present invention is particularly effectively applied is a photoresist film composed of a novolak-based phenol resin and a photoactive compound based on diazonaphthoquinone, and is effective for a photoresist film composed of a mixture thereof. .

As a method of removing the resist, the modified or cured resist, and the dry etching residue on the flat panel display substrate using the resist stripper composition of the present invention, a method of depositing a substrate coated with a resist in the stripper solution or a stripping solution is performed. The method of spraying on this board | substrate is mentioned. In this case, physical treatment such as ultrasonic irradiation, rotation, or contacting a brush swinging from side to side may be used in combination. After the peeling liquid treatment, the peeling liquid remaining on the substrate can be removed by the subsequent cleaning treatment. The washing step is the same as the peeling step except that water or isopropyl alcohol is used instead of the peeling solution.

The peeling method may be a deposition method, a spraying method, or a deposition and spraying method. When peeling by immersion, spraying, or spraying and spraying, the temperature as peeling conditions is usually 15 to 100 ° C, preferably 30 to 70 ° C, and the deposition, spraying, or deposition and spraying time is usually 30 seconds to 40 minutes, Preferably from 1 to 20 minutes, but not strictly applied in the present invention, it can be modified by easy and suitable conditions by those skilled in the art. When the temperature of the stripper composition applied on the resist-coated substrate is less than 15 ° C., the time required for removing the modified or cured resist film may be too long. Moreover, when the temperature of a composition exceeds 100 degreeC, the damage of the lower film layer of a resist film is feared, and difficulty in handling a peeling liquid follows.

The resist stripper composition of the present invention can increase the activity of a compound in the composition in a water system type to effectively remove resist and etch residues, and is advantageous in terms of cost. In addition, compared to the organic peeling solution, the viscosity is similar to water and can be applied to the single-leaf method because the composition is sprayable. Therefore, the peeling liquid composition for removing the photoresist residue of the present invention can be applied to both a batch method of peeling a plurality of wafers at once or a single wafer processor method of peeling one sheet at a time.

The resist stripper composition of the present invention and the stripping method using the same can be used not only for removing general resists, but also for removing resists and etching residues that have been modified or cured by etching gas and high temperature. In addition, the resist stripper composition of the present invention and a stripping method using the same have an advantage of excellent corrosion protection against metal wirings including aluminum or copper for use in the manufacture of flat panel displays.

Hereinafter, the present invention will be described in more detail using examples and comparative examples. However, the following examples and comparative examples are intended to illustrate the present invention, the present invention is not limited by the following can be variously modified and changed.

Example  1-5 and Comparative example  One: Resist Stripper  Preparation of the composition

The resist stripper composition was prepared by mixing the components and contents shown in Table 1 below.

division Basic compound [% by weight] Amide Compound [wt%] Proton polar solvent [wt%] Hydroxy Benzene Compound [wt%] Water [% by weight] Example 1 MEA 5 DMAc 25 BDG 35 Catechol 2 33 Example 2 MEA 20 DMAc 25 BDG 35 Catechol 2 18 Example 3 MIPA 20 DMAc 25 BDG 35 Catechol 2 18 Example 4 DBA 20 DMAc 25 BDG 35 Catechol 2 18 Example 5 DGA 20 DMAc 25 BDG 35 Catechol 2 18 Comparative Example 1 MEA 0 DMAc 25 BDG 35 Catechol 2 38

(Unit: wt%, balance: pure water added)

MEA: monoethanolamine

MIPA: monoisopropanolamine

DBA: Dibutanolamine

DGA: 2- (2-aminoethoxy) ethanol

DMAc: N, N-dimethyl acetamide

BDG: Diethylene Glycol Monobutyl Ether

Test Example  1: kind of basic compound and Inclusion  According Resist  Removal performance evaluation

In order to confirm the peeling effect of the resist stripping composition prepared in Examples 1 to 5 and Comparative Example 1 after forming a Mo / Al / Mo layer on the glass substrate by using a thin film sputtering method After the photoresist pattern was formed, the substrates were etched by etching the metal film by wet etching and dry etching. The resist peeling compositions of Examples 1 to 5 and Comparative Example 1 were kept at a constant temperature of 60 ° C. using a thermostat, and then the objects were deposited for 10 minutes to evaluate the peel force. Thereafter, washing was performed with pure water for 1 minute to remove the stripping solution remaining on the substrate, and the substrate was completely dried using nitrogen to remove the pure water remaining on the substrate after the cleaning. The modified or cured resist and dry etching residue removal performance of the substrate were confirmed using a scanning electron microscope (SEM, Hitach S-4700), and the results are shown in Table 2 below.

division Peeling performance Wet etch substrate Dry etching substrate Example 1 ◎ ◎ Example 2 ◎ ◎ Example 3 ◎ ◎ Example 4 ◎ ○ Example 5 ◎ ○ Comparative Example 1 △ ×

Note)) [Peeling performance] ◎: Very good, ○: Good, △: Normal, ×: Poor

According to the test results of Table 2, the resist stripper composition of Examples 1 to 4 was excellent in the resist stripping ability by wet etching, and also excellent in the removal of the resist and the etching residue after dry etching. . However, in Comparative Example 1 containing no amine, the wet etched photoresist showed good performance, but the dry etched resist and the etch residue were found to be poor.

Example  6-14 and Comparative example  2 ~ 3: Resist Stripper  Preparation of the composition

The resist stripper composition was prepared by mixing the components and contents shown in Table 3 below.

division Basic compound [% by weight] Amide Compound [wt%] Proton polar solvent [wt%] Hydroxy benzene compound [% by weight] Water [% by weight] Example 2 MEA 20 DMAc 25 BDG 35 Catechol 2 18 Example 6 MEA 20 DMAc 10 BDG 35 Catechol 2 33 Example 7 MEA 20 DMAc 38 BDG 35 Catechol 2 5 Example 8 MEA 20 DMF 25 BDG 35 Catechol 2 18 Example 9 MEA 20 NMF 25 BDG 35 Catechol 2 18 Example 10 MEA 20 DMAc 25 BDG 20 Catechol 2 33 Example 11 MEA 20 DMAc 25 BDG 48 Catechol 2 5 Example 12 MEA 20 DMAc 25 BG 35 Catechol 2 18 Example 13 MEA 20 DMAc 25 BTG 35 Catechol 2 18 Example 14 MEA 20 DMAc 25 MDG 35 Catechol 2 18 Comparative Example 2 MEA 20 - - BDG 35 Catechol 2 43 Comparative Example 3 MEA 20 DMAc 25 - - Catechol 2 53

(Unit: wt%, balance: pure water added)

Note) DMF: N, N-dimethyl formamide

NMF: N-methyl formamide

BG: Ethylene Glycol Monobutyl Ether

BTG: Triethylene Glycol Monobutyl Ether

MDG: Diethylene Glycol Monomethyl Ether

Test Example  2: presence of amide compound and type of polar solvent and Inclusion  Performance evaluation

 The peeling performance of Examples 2, 6 to 14 and Comparative Examples 2 and 3 prepared by varying the content of the amide compound and the type and content of the polar solvent were confirmed. As a substrate for confirming the resist removal performance, the same substrate as in Test Example 1 was used. The experiment was performed under the same treatment conditions, and the results are shown in Table 4 below.

division Peeling performance Wet etch substrate Dry etching substrate Example 2 ◎ ◎ Example 6 ◎ ○ Example 7 ◎ ◎ Example 8 ◎ ◎ Example 9 ◎ ◎ Example 10 ◎ ◎ Example 11 ◎ ◎ Example 12 ◎ ◎ Example 13 ◎ ◎ Example 14 ◎ ◎ Comparative Example 2 ○ × Comparative Example 3 ○ △

Note)) [Peeling performance] ◎: Very good, ○: Good, △: Normal, ×: Poor

According to the test result of Table 4, it is confirmed that the resist stripper composition of Examples 2, 6 to 14 is excellent in resist stripping force by wet and dry etching. However, in the case of Comparative Example 2 containing no amide compound and Comparative Example 3 containing no polar solvent, the resist removal performance on the dry etching substrate was insufficient.

Example  15-17 and Comparative example  4: Resist Stripper  Preparation of the composition

To prepare a composition for removing the resist by mixing the components and contents disclosed in Table 5 below.

division Basic compound [% by weight] Amide Compound [wt%] Proton polar solvent [wt%] Hydroxy Benzene Compound [wt%] Water [% by weight] Example 2 MEA 20 DMAc 25 BDG 35 Catechol 2 18 Example 15 MEA 20 DMAc 25 BDG 35 Catechol 0.1 19.9 Example 16 MEA 20 DMAc 25 BDG 35 Catechol 5 15 Example 17 MEA 20 DMAc 25 BDG 35 MG 2 18 Comparative Example 4 MEA 20 DMAc 25 BDG 35 - - 20

(Unit: wt%, balance: pure water added)

Note) MG: Methyl Gallate

Test Example  3: kinds of preservatives and Inclusion  Corrosion protection Performance performance  evaluation

The anti-corrosion ability of the aluminum multilayer film wirings was evaluated using the resist stripper compositions of Examples 2, 15 to 17, and Comparative Example 4 prepared by varying the type and content of the corrosion inhibitor.

Specifically, in order to evaluate the anti-corrosion ability of the resist stripper composition of Examples 2, 15 to 17, and Comparative Example 4, the anti-corrosion force was evaluated using a substrate exposed to Mo / Al / Mo wiring. Corrosion evaluation for aluminum was deposited by using a scanning electron microscope (SEM, Hitach S-4700) after immersion for 30 minutes in the peeling liquid composition stock solution at 60 ℃ and washed, and the results are shown in Table 6 below. .

division Corrosion Protection Ability Example 2 ◎ Example 15 ○ Example 16 ◎ Example 17 ◎ Comparative Example 4 ×

Note)) [Anti-corrosion ability] ◎: Very good, ○: Good, △: Normal, ×: Poor

According to the test results of Table 6, the resist stripper composition of Examples 2, 15 to 17 showed a good corrosion protection performance for aluminum, while showing a satisfactory corrosion protection performance in Comparative Example 4 containing no corrosion inhibitors Could be confirmed.

Example  18-20: Resist Stripper  Preparation of the composition

The resist stripper composition was prepared by mixing the components and contents shown in Table 7 below.

division Basic compound [% by weight] Amide Compound [wt%] Proton polar solvent [wt%] Hydroxy benzene compound [% by weight] Water [% by weight] Sulfoxide compounds Example 4 DBA 20 DMAc 25 BDG 35 Catechol 2 18 Example 5 DGA 20 DMAc 25 BDG 35 Catechol 2 18 Example 18 DBA 20 DMAc 20 BDG 30 Catechol 2 10 DMSO 18 Example 19 DGA 20 DMAc 20 BDG 30 Catechol 2 10 DMSO 18 Example 20 DBA 20 DMAc 20 BDG 30 Catechol 2 10 Sulfolane 18 Example 21 MEA 0 DMAc 25 BDG 35 Catechol 2 18 DMSO 20 Comparative Example 1 MEA 0 DMAc 25 BDG 35 Catechol 2 38

(Unit: weight%)

DMSO: Dimethyl sulfoxide

Test Example  4: Sulfoxide  Types of compounds and Inclusion  According to wet and dry expression bracket Residue  Removal performance evaluation

Mo / Al / Mo layer using a thin film sputtering method on a glass substrate according to a conventional method in order to confirm the peeling effect of the resist stripping composition prepared in Examples 4, 5, 18-20 and Comparative Example 1 After the formation of the photoresist pattern, the substrate on which the metal film was etched was prepared by wet etching and dry etching. The resist peeling compositions of Examples 4, 5, 18-20 and Comparative Example 1 were kept at a constant temperature of 60 ° C. using a thermostat, and then the objects were deposited for 10 minutes to evaluate the peel force. Thereafter, washing was performed with pure water for 1 minute to remove the stripping solution remaining on the substrate, and the substrate was completely dried using nitrogen to remove the pure water remaining on the substrate after the cleaning. The modified or cured resist and dry etching residue removal performance of the substrate were confirmed using a scanning electron microscope (SEM, Hitach S-4700), and the results are shown in Table 8 below.

division Peeling performance Wet etch substrate Dry etching substrate Example 4 ◎ ○ Example 5 ◎ ○ Example 18 ◎ ◎ Example 19 ◎ ◎ Example 20 ◎ ◎ Example 21 ○ △ Comparative Example 1 △ ×

Note)] [Peeling performance] ◎: Very good, ○: Good, △: Normal, ×: Poor

According to the test results of Table 7, the resist stripper composition of Examples 18 to 21 containing the sulfoxide compound was subjected to wet etching in comparison with Examples 4 and 5 and Comparative Example 1 containing no sulfoxide compound. In addition, the resist stripping ability was excellent, and the removal performance was relatively excellent also in the resist and the etching residue which went through dry etching.

Claims (12)

A resist stripper composition comprising (a) a basic compound, (b) an amide compound represented by the following formula (1), (c) a protonic polar solvent, (d) a hydroxy benzene compound, and (e) water: [Formula 1]

Wherein R1, R2, and R3 are each independently hydrogen, a C1-C10 alkyl group, a C1-C10 hydroxy group alkyl group, a carboxyl group, a C1-C10 alkyl group substituted with a C1-C10 alkoxy group, or a carbon number It is an amino group unsubstituted or substituted by the alkyl group of 1-4, The said R1 and R2 may form a ring together. The resist stripping method according to claim 1, wherein the (a) basic compound is at least one member selected from the group consisting of hydroxide salts, primary amines, secondary amines, tertiary amines, cyclic amines, and alkanol amines. Liquid composition. The method according to claim 1, wherein (b) the amide compound represented by the formula (1) is formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacet Amide, N- (2-hydroxyethyl) acetamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, and 3-part A composition for removing a resist, characterized in that at least one member selected from the group consisting of oxy-N, N-dimethylpropionamide. The method according to claim 1, wherein the (c) proton polar solvent is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol mono Ethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol mono 1 selected from the group consisting of methyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate The composition for resist removal, characterized in that more. The method according to claim 1, wherein the (d) hydroxy benzene compound is catechol, hydroquinone, pyrogarol, gallic acid, methyl gallate, ethyl gallate, n-propyl gallate, isopropyl gallate, and n-butyl gallate Resist stripping composition, characterized in that at least one member selected from the group consisting of. The resist stripper composition according to claim 1, wherein the resist stripper composition further comprises a sulfoxide compound. The resist stripper composition according to claim 1, wherein the resist stripper composition further comprises a surfactant. The composition according to claim 1, wherein the composition for removing the resist is (a) 5 to 30% by weight of the basic compound, (b) 10 to 60% by weight of the amide compound represented by Formula 1, (c) proton 10 to 60% of a polar solvent, (d) 0.1 to 10% by weight of a hydroxy benzene compound, and (e) 5 to 50% by weight of water. (I) depositing a conductive metal film on a flat panel display substrate, (II) forming a resist film on the conductive metal film; (III) selectively exposing the resist film; (IV) developing the resist film after exposure to form a resist pattern; (V) etching the conductive metal film using the resist pattern as a mask; And (VI) peeling the resist after the etching process, the resist pattern and the resist modified and cured by etching using a resist composition of any one of claims 1 to 7. The resist stripper composition according to claim 1, wherein the resist stripper composition is used for resist stripping of a flat panel substrate having a metal wiring including aluminum or copper formed thereon. The flat panel for a display manufactured using the resist stripper composition of any one of Claims 1-8. The flat panel display device manufactured using the resist stripper composition of any one of Claims 1-8.