KR20160108109A

KR20160108109A - Resist stripper composition

Info

Publication number: KR20160108109A
Application number: KR1020150131245A
Authority: KR
Inventors: 이유진; 고경준; 김성식; 김정현; 최한영
Original assignee: 동우 화인켐 주식회사
Priority date: 2015-03-05
Filing date: 2015-09-16
Publication date: 2016-09-19
Also published as: KR102009545B1

Abstract

The present invention relates to a resist stripped liquid composition which improves a problem of reducing stripping properties. The resist stripped liquid composition comprises: (a) a secondary amine represented by chemical formula 1; (b) an aprotic organic solvent compound; and (c) a primary alcohol compound.

Description

RESIST STRIPPER COMPOSITION [

(A) a secondary amine represented by the general formula (1); (b) an aprotic organic solvent compound; And (c) a primary alcohol compound.

In recent years, efforts have been made to increase the number of pixels per unit area as the demand for high-resolution implementation of flat panel displays increases. In accordance with this tendency, reduction of the wiring width is also required, and in order to cope with this, the dry etching process has been introduced, and the process conditions have become increasingly severe.

In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required, and copper having a lower resistivity than aluminum is now being used as a wiring material. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing.

Specifically, a considerable level of exfoliation characteristics is required for the removal power against etch residue generated after the dry etching process and the corrosion inhibiting ability against metal wiring. Particularly, corrosion resistance against copper as well as aluminum is required, and in order to secure price competitiveness, economical efficiency such as increase in the number of processed substrates is also required.

In general, monoethanolamine, amines such as methylaminomethanol and the like are used to remove the resist. However, it is known that the photoresist stripper composition of the prior art is deteriorated in peelability due to lowering of amine content due to long-term storage and volatilization loss of amine under a high-temperature process temperature condition. For example, Korean Patent Laid-Open Publication No. 10-2006-0048092 discloses a resist stripping liquid composition containing alkanolamine, but it has been found that the detachability due to volatilization loss of amine under long term storage and high temperature process temperature The problem that still arises is still not resolved.

In order to solve the problems of the prior art as described above, it is an object of the present invention to provide an excellent peeling liquid composition which has excellent anticorrosive property and prevention of stain generation, and which suppresses deterioration of peelability due to volatilization loss of amine under prolonged storage and high- Is required.

Korean Patent Publication No. 10-2006-0048092

It is an object of the present invention to provide a resist stripping liquid composition which has an excellent anticorrosive property and an effect of preventing stain generation and which has a problem of deterioration of peelability due to loss of volatilization of amine under prolonged storage and high temperature process temperature conditions .

It is another object of the present invention to provide a method of manufacturing a flat panel display substrate using the composition, and a flat panel display substrate manufactured by the method.

In order to achieve the above object,

(Formula 1)

In addition, the present invention provides a method for manufacturing a flat panel display substrate including a step of cleaning a flat panel display substrate using the resist stripping liquid composition of the present invention.

The present invention also provides a flat panel display substrate manufactured by the above manufacturing method.

The resist stripper composition of the present invention has excellent advantages in that it has excellent antiseptic effect and prevention effect of stain generation, and also has a merit of improving long term storage and deterioration of peelability due to loss of volatilization of amine under high temperature process temperature conditions have.

Hereinafter, the present invention will be described in more detail.

(A) a secondary amine represented by the general formula (1); (b) an aprotic organic solvent compound; And (c) a primary alcohol compound. The inventor of the present invention has found that the deterioration of the peelability of the composition due to the volatilization loss of amine under prolonged storage and high temperature process temperature conditions is attributable to the volatilization loss of the starting amine generated by the disproportionation reaction, 1, the disproportionation reaction is minimized and the volatilization loss of the starting amine can be suppressed. As a result, the peelability of the composition is not deteriorated even in a long-term storage or at a high temperature process temperature .

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(a) a secondary amine represented by the general formula (1)

The present invention is characterized by comprising a secondary amine represented by the following general formula (1).

(Formula 1)

In Formula 1, R is a linear or branched alkyl group having from 2 to 20 carbon atoms or a C5 to C8 cyclic alkyl group

Lt;

The straight-chain or branched alkyl group or C5-C8 cyclic alkyl group is substituted or unsubstituted by a hydroxy group, a C1-C10 alkoxy group, a cyano group or a fluorine group, and n is an integer of 0 to 3 .

The secondary amine represented by the general formula (1) is a secondary amine containing a hydroxymethyl group, which is prepared from a primary amine having a boiling point of 20 degrees or higher at normal pressure. When the secondary amine represented by the formula (1) of the present invention is used in the release liquid composition, such disproportionation reaction is minimized and the volatile loss of the starting amine can be suppressed. As a result, The releasability of the film is not deteriorated. In addition, the secondary amine represented by the formula (1) has better removal ability than the organic alkali compounds other than the chemical formula (1), and at the same time, the corrosion resistance to the lower metal is low, so that the total separation time can be reduced. In addition, the organic alkaline compound of formula (1) can reduce the amount of the anticorrosive agent sharply or can be reduced, minimizing the electrical characteristic errors that may occur in the process, and reducing the manufacturing process during the manufacturing process. It can also benefit a lot from the point of view.

The present invention includes a process for producing a secondary amine represented by the general formula (1) for use in a resist stripper composition, which comprises using a primary amine having a boiling point of 20 DEG C or higher at normal pressure.

Specifically, the secondary amine represented by the general formula (1) is preferably selected from the group consisting of 2-hydroxymethylaminoethanol, 2- (2- (hydroxymethylamino) ethoxy) ethanol, 2- (Methoxy) ethoxy) ethanol, ethylaminomethanol, N-hydroxymethylpropylamine, butylaminomethanol, isobutylaminomethanol and N- (2-hydroxypropyl) aminomethanol. 1 may be used alone or in admixture of two or more, or may be mixed with an organic alkali compound.

Examples of organic alkali compounds mainly used in TFT strippers include tetramethylammonium hydroxide, tetraethylammonium hydroxide and amines. The amines include methylamine, ethylamine, monoisopropylamine , primary amines such as n-butylamine, sec-butylamine, isobutylamine, t-butylamine and pentylamine; Examples of the secondary amine such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine and methylisobutylamine Amine; Tertiary amines such as diethylhydroxyamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; But are not limited to, choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, monomethylethanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- Amino-2-propanol, 2-amino-1-propanol, 3-amino-2-aminoethylaminoethanol, Alkanolamines such as 1-propanol, 4-amino-1-butanol, and dibutanolamine; (Methoxymethyl) dimethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol and the like And the like.

The secondary amine represented by the general formula (1) and the above-mentioned organic alkali compound may be decomposed or crosslinked under various process conditions such as dry or wet etching, ashing or ion implant processing, By intensively penetrating the polymer matrix and breaking the bonds existing in the molecule or between the molecules and forming vacancies in the structurally weak portions in the resist remaining on the substrate to deform the resist into amorphous polymer gel lumps So that the resist attached to the top of the substrate can be easily removed. In the case of the organic alkaline compound, when the photoresist removing ability and the corrosion resistance of the metal under the substrate are strengthened to exhibit the excellent removal performance, the corrosion resistance of the lower metal is increased, so that the damage to the metal is increased, , The deterioration of the ability to remove deteriorates the peeling speed and the dissolving power, which causes a half-interaction.

The organic alkali compound of formula (1) is preferably contained in an amount of 0.01 to 20% by weight, more preferably 0.05 to 5% by weight. If the content of the organic alkali compound is less than the above range, foreign matter of the resist may remain due to a decrease in resist peeling force. If the content of the organic alkali compound exceeds the above range, it is difficult to control the corrosion rate of the metal wiring &Lt; / RTI >

(b) a non-magnetic organic solvent compound

The non-magnetic organic solvent compound included in the present invention is advantageous for manifesting the removal performance of the resist polymer modified or crosslinked by etching or the like, and at the same time, it is advantageous for increasing the number of treatments. It is preferable that the non-protonic polar solvent has a boiling point of not excessively high or low for proper peeling force and can be mixed and used.

Specific examples of the aprotic organic solvent compound include pyrrolidone compounds such as 1-acetylpyrrolidine, 2-pyrrolidone, N-methylpyrrolidone and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; Sulfoxide compounds such as dimethyl sulfoxide and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; N, N-dimethylformamide, N, N-dimethylformamide, N, N-dimethylformamide, N, N-dimethylformamide, N, N-dimethylacetamide, N-dimethylacetamide, N, N-diethylacetamide, N- (2-hydroxyethyl) acetamide, N, N-dimethylpropionamide, 3- N, N-dimethylpropionamide, N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N- dimethylpropionamide, 3-butoxy- ; These may be used singly or in combination of two or more.

The amount of the non-magnetic organic solvent is preferably 10 to 70% by weight, more preferably 20 to 60% by weight based on the total amount of the non-magnetic organic solvent compound. In the case where it is contained in the above-mentioned content range, it is also advantageous to exhibit the removal performance of the resist polymer modified or crosslinked by etching or the like. If the amount of the aprotic organic solvent is less than the above range, the ability to remove cross-linked resist is lowered, the overall process capability is deteriorated, and if the aprotic organic solvent is contained in an amount exceeding the above range, the content of the other component is reduced There is a problem that it is not possible to take an overall advantage by causing a negative influence or raising the price of a product.

(c) a primary alcohol compound

The primary alcohol compound according to the present invention dissolves the solidified resist polymer and facilitates the removal of the peeling liquid by water in the DI rinse process after peeling off the resist to minimize re-precipitation of the resist dissolved in the peeling liquid It plays a role.

Specific examples of the primary alcohol compound include tetrahydrofurfuryl alcohol, hydroxymethylcyclopentene, 4-hydroxymethyl-1,3-dioxolane, 2-methyl-4-hydroxymethyl- Butanediol, 1,4-butanediol, 2-methoxyethanol, polyethylene glycol monomethyl, 1,3-propanediol, 1,3-butanediol, Ether, polyethylene glycol monobutyl ether, diethylene glycol, triethylene glycol, isopropyl glycol and the like, and diethylene glycol monomethyl ether, diethylene glycol ethyl ether, triethylene glycol mono Methyl ether, triethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, monoisopropyl ether, diethylene glycol monobutyl ether, polyethylene glycol, polyethylene glycol moiety Propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, etc. These may be used singly or in combination of two or more kinds. Can be mixed and used.

The amount of the primary alcohol compound is preferably 20 to 80 wt%, more preferably 45 to 75 wt%, based on the total amount of the composition. When it is included in the above content range, it is easy to remove the peeling liquid by water in the DI Rinse process.

When the primary alcohol mixture is contained in an amount of less than 20% by weight, if the resolved resist polymer is remained on the metal metal, the solubility due to water is lowered to cause stain, and the primary alcohol mixture contains more than 80% by weight , The peeling liquid may remain on the substrate and adverse effects may be exerted that the occurrence of stains becomes worse and the content of other components may be reduced to deteriorate the peeling ability and the removability and the solubility of the crosslinked photoresist There is a fear that the cumulative number of trials and strippers may be lowered.

The resist stripper composition according to the present invention may further comprise at least one of corrosion inhibitor or deionized water in addition to the above components. (d) the corrosion inhibitor may be contained in an amount of 0.001 to 0.5% by weight, and / or (e) the deionized water may be contained in an amount of 0.01 to 30% by weight. .

(d) Corrosion inhibitor

In the present invention, the kind of the corrosion inhibitor is not particularly limited, but may be selected from the group consisting of benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] Methyl] imino] bist methanol, 2,2 '- [[[ethyl-1-hydrogen-benzotriazol- 1 -yl] methyl] Imino] bisethanol, 2,2 '- [[[methyl-1-hydrogen-benzotriazole- Benzimidazol-1-yl] methyl] imino] bismethylamine, 2,2 '- [[ Benzotriazole, 5-methyl-1-hydrogen-benzotriazole, 4-methyl-4-methyl- , 5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole , 4,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole 5,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole; Methylphenol, 2,6-dimethylphenol, 2,4,6-trimethylphenol, 2-ethylphenol, 2,6-diethylphenol, 2,6- Butylphenol, 2,6-di-t-butylphenol, 2,4,6-tri-t-butyl Phenol compounds such as phenol, 2,6-di-t-butyl-4-methylphenol, 2,4-dimethyl-6-t-butylphenol and t-butyl-4-methoxyphenol; Monocarboxylic acids such as formic acid, acetic acid, and propionic acid; Dicarboxylic acids such as acetic acid, malic acid, malonic acid, succinic acid, gluconic acid, adipic acid, pimelic acid, maleic acid, fumaric acid and glutaconic acid; Tricarboxylic acids such as trimellitic acid and tricarvaleric acid; Organic acids such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxycarboxylic acid;

Maleic amide esters, maleic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, And organic acid amide esters such as tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters, tartaric acid esters and tartaric acid esters. In particular, the corrosion inhibitor is preferably at least one selected from 4-methyl-1-hydrogen-benzotriazole, 5-methyl-1-hydrogen-benzotriazole and tolythriazole.

(e) deionized water

In the present invention, the deionized water improves the activation of the alkaline compound to increase the peeling speed, and it is easy to mix with the primary alcohol and the aprotic polar solvent, so that the deionized water does not remain in the rinsing process by deionized water after the peeling process, So that it can be completely removed.

The resist stripping solution composition of the present invention can be prepared by mixing the above-mentioned compounds with a certain amount, and the mixing method is not particularly limited and various known methods can be applied without limitation.

The resist stripper composition of the present invention may be a resist stripper composition for flat panel display.

In addition, as a method for removing the resist using the resist stripping liquid composition for a flat panel display of the present invention, a dipping method is generally used, but other methods such as a spraying method may also be used. As the cleaning agent after treatment with the composition according to the present invention, it is not necessary to use an organic solvent such as alcohol, and it is sufficient to wash with water.

In addition,

There is provided a method of manufacturing a flat panel display substrate including a step of cleaning a flat panel display substrate using the resist stripping liquid composition of the present invention and a flat panel display substrate manufactured by the manufacturing method.

The resist stripping liquid composition of the present invention can be usefully used in a process for removing a resist for a flat panel display, and can also be used for semiconductors or other electronic products.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the scope of the present invention is not limited by the following examples and comparative examples, and various modifications and changes may be made.

< Example And Comparative Example >

Example 1 to 6 and Comparative Example 1 to 6: Resist Preparation of release liquid composition

The ingredients and the contents shown in Table 1 below were mixed to prepare a resist stripper composition.

(a) a secondary amine represented by the general formula (1) (b) an aprotic polar solvent (c) a primary alcohol compound (d) Corrosion inhibitor (7) DIW Kinds ingredient
(weight%) Kinds ingredient
(weight%) Kinds ingredient
(weight%) Kinds ingredient
(weight%) ingredient
(weight%) Example 1 A-1 2 B-1 40 E-1 58 Example 2 A-2 3 B-2 35 E-2 62 Example 3 A-3 3 B-3 27 E-3 70 Example 4 A-3
A-5 0.5
0.5 B-3 50 E-1 49 Example 5 A-4 5 B-2 44 E-3 54.99 D-1 0.01 Example 6 A-2 4 B-1 60 E-2 30.99 D-2 0.01 5 Comparative Example 1 - B-1 40 E-1 60 Comparative Example 2 A-1 4 - E-2 96 Comparative Example 3 A-2 5 B-3 95 - Comparative Example 4 A-6 3 B-1 45 E-3 52 Comparative Example 5 A-7 3 B-1 49 E-1 48 Comparative Example 6 A-8 4 B-3 36 E-2 60 Comparative Example 7 A-4 2 B-2 10 E-2 18 70

A-1: 2- (2- (hydroxymethylamino) ethoxy) ethanol

A-2: Ethylaminomethanol

A-3: N- (2-hydroxypropyl) aminomethanol

A-4: 2-hydroxymethylaminoethanol

A-5: Diethanolamine

A-6: Monoethanolamine

A-7: Methylaminomethanol

A-8: N-hydroxymethylacetamide

B-1: N-methylpyrrolidone

B-2: N-ethyl formamide

B-3: Dimethyl sulfoxide

E-1: 4-hydroxymethyl-1,3-dioxolane

E-2: Diethylene glycol monomethyl ether

E-3: Diethylene glycol monoethyl ether

D-1: 4-Methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

D-2: Tolythriazole

<Experimental Example 1> Evaluation of peeling force of cleaning liquid

In order to confirm the peeling effect of the photoresist cleaning composition of the above examples and comparative examples, a photoresist was uniformly coated on a 10 * 10 cm glass with a spin coater to a film thickness of 1.2 탆, and then baked at 150 캜 for 10 minutes , And cut to 2 * 2 cm to prepare a substrate. After the resist cleaning composition was kept at a constant temperature of 50, the immersion time was split, and the object was immersed to evaluate the peeling force. Thereafter, the substrate was cleaned with pure water for 1 minute to remove the cleaning liquid remaining on the substrate, and the substrate was completely dried using nitrogen to remove the pure water remaining on the substrate after cleaning. The denaturation or curing resist and dry etching residue removal performance of the substrate were confirmed using a scanning electron microscope (SEM, Hitachi S-4700), and the results are shown in Table 2 below. Good ", " good ", " good ", and " poor "

&Lt; Experimental Example 2 > Evaluation of peeling force of washing liquid after a lapse of time

The prepared test solutions were allowed to stand at room temperature for one week, and then peel strengths of the cleaning solutions of the above Examples and Comparative Examples were evaluated in the same manner as in Experiment 1. The results are shown in Table 2 below.

&Lt; Experimental Example 3 >

The evaluation of the corrosion inhibiting ability of the resist stripping solution composition of the examples and comparative examples against the metal wiring was carried out by using a substrate on which Cu wiring was exposed and keeping the temperature of the stripping solution composition at 50 캜 constantly and immersing the substrate for 10 minutes , Washed and dried, and evaluated using a scanning electron microscope (SEM, Hitach S-4700). The results are shown in Table 3 below. Excellent results are shown as?, Good results as?, Average as?, And defects as?. The results are shown in Table 2 below.

&Lt; Experimental Example 4 >

A substrate having a Cu layer formed on a glass substrate using a thin film sputtering method was prepared according to a conventional method in order to confirm the effect of preventing the formation of stain on the resist stripping solution composition. The resist required for the experiment was prepared by baking the resist DWG-520 at a high temperature of 115 ° C for 3 days to remove all of the solvent and solidify it.

To the resist stripper composition, 0.3%, 0.5%, and 1% of the above-prepared resist were further added, and the resist stripper was kept at a constant temperature of 50 by dissolving the resist stripper at room temperature. After immersing the target Cu substrate in the stripper at a constant temperature for 2 minutes, remove the stripper and resist remaining on the substrate by using a nitrogen gas at a constant pressure, place the substrate on a flat surface, Drop 5 drops and leave for 1 minute. After 1 minute, the substrate was rinsed with DIW for 1 minute, and then DIW remaining on the substrate was completely removed using nitrogen. A halogen lamp, a digital camera, and an electron microscope were used to determine the degree of stain generation on the substrate in order to reproduce the actual TFT process. Respectively. The results are shown in Table 2 below.

division Peel force Peel force after 1 week Revolution Stain occurrence Example 1 ◎ ◎ ◎ ◎ Example 2 ◎ ○ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ◎ ◎ Example 6 ◎ ○ ◎ ◎ Comparative Example 1 X X ◎ △ Comparative Example 2 ○ ○ ◎ X Comparative Example 3 ◎ ◎ ◎ X Comparative Example 4 ◎ ◎ X X Comparative Example 5 ◎ X ◎ ◎ Comparative Example 6 X X ◎ X Comparative Example 7 X X ◎ △

The results of the tests of Table 2 show that the resist stripper composition of the present invention has excellent anticorrosive properties and prevention of stain formation but also deterioration of peelability due to volatilization loss of amine under prolonged storage and high temperature process temperature conditions Which is a problem that has been solved.

Claims

(a) a secondary amine represented by the following formula (1);
(b) an aprotic organic solvent compound; And
(c) a primary alcohol compound.
[Chemical Formula 1]

(Wherein R is a linear or branched alkyl group or a C5-C8 cyclic alkyl group of C2-C20

Lt;
The straight-chain or branched alkyl group or C5-C8 cyclic alkyl group is substituted or unsubstituted by a hydroxy group, a C1-C10 alkoxy group, a cyano group or a fluorine group,
and n is an integer of 0 to 3.)

[Claim 2] The method according to claim 1, wherein the secondary amine represented by Formula (1) is selected from the group consisting of 2-hydroxymethylaminoethanol, 2- (2- (hydroxymethylamino) ethoxy) (Hydroxymethylamino) ethoxy) ethoxy) ethanol, ethylaminomethanol, N-hydroxymethylpropylamine, butylaminomethanol, isobutylaminomethanol and N- (2-hydroxypropyl) aminomethanol. Or more.

The method of claim 1, wherein the (b) aprotic organic solvent compound is selected from the group consisting of 1-acetylpyrrolidine, 2-pyrrolidone, N-methylpyrrolidone and pyrrolidone compounds of N-ethylpyrrolidone; 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone imidazolidinone compounds; Sulfoxide compounds of dimethyl sulfoxide and sulfolane; Phosphate compounds of triethylphosphate and tributylphosphate; And N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethyl acetoacetamide, N, N-tertbutylformamide, acetamide, N, N-dimethylacetamide, N, N-dimethylacetamide, N, N-diethylacetamide, N- (2-hydroxyethyl) -N, N-dimethylpropionamide, N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N- dimethylpropionamide and 3-butoxy- Amide compound represented by the general formula (1): " (1) "

The method according to claim 1, wherein the primary alcohol compound (c) is selected from the group consisting of tetrahydroperfuryl alcohol, hydroxymethylcyclopentene, 4-hydroxymethyl-1,3-dioxolane, Dioxolane-4-methanol, 1,3-propanediol, 1,3-butanediol, 1,4-butanediol, 2-methoxyethanol, polyethylene glycol Ethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, diethylene glycol, triethylene glycol, isopropyl glycol, diethylene glycol monomethyl ether, diethylene glycol ethyl ether, triethylene glycol monomethyl But are not limited to, ether, triethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, monoisopropyl ether, diethylene glycol monobutyl ether, polyethylene glycol, polyethylene glycol monomethyl ether, Wherein the resist stripping liquid composition is at least one selected from the group consisting of ethylene glycol monobutyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether and propylene glycol monomethyl ether acetate.

The resist stripping composition according to claim 1,
(a) 0.01 to 20% by weight of a secondary amine represented by the following formula (1);
(b) from 10 to 70% by weight of an aprotic organic solvent; And
(c) 20 to 80% by weight of a primary alcohol compound.

The resist stripper composition according to claim 5, further comprising at least one of (d) 0.001 to 0.5% by weight of a corrosion inhibitor, and (e) 0.01 to 30% by weight of deionized water based on the total weight of the resist stripper composition.

The resist stripper composition according to claim 6, wherein (d) the corrosion inhibitor is at least one selected from 4-methyl-1-hydrogen-benzotriazole, 5-methyl-1-hydrogen-benzotriazole and tolylithiazole.

A process for producing a flat panel display substrate comprising the step of cleaning a flat panel display substrate using the resist stripping liquid composition according to any one of claims 1 to 7.

A flat panel display substrate manufactured by the manufacturing method of claim 8.