KR20160033023A - A resist stripper composition, a method of manufacturing flat panel displays, and flat panel displays manufactured by the same - Google Patents

Abstract

Provided is a resist stripper composition comprising: a compound (A) represented by chemical formula 1; alkanolamines (B) containing a primary and a tertiary alkanolamine; primary alcohols (C); and a polar aprotic solvent (D). According to the present invention, the stripper composition has superior resist-removing capability.

Description

TECHNICAL FIELD [0001] The present invention relates to a resist stripping liquid composition, a method of manufacturing a flat panel display substrate using the composition, and a flat panel display substrate manufactured by the method. BACKGROUND OF THE INVENTION 1. Field of the Invention SAME}

The present invention relates to a resist stripper composition, and more particularly, to a resist stripper composition that minimizes corrosion of a metal wiring in a resist stripping process and has excellent stripping ability, a method of manufacturing a flat panel display substrate using the composition, And a flat panel display substrate manufactured by the manufacturing method.

In recent years, efforts have been made to increase the number of pixels per unit area as the demand for high-resolution implementation of flat panel displays increases. In accordance with this tendency, reduction of the wiring width is also required, and in order to cope with this, the dry etching process has been introduced, and the process conditions have become increasingly severe. In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required, and copper having a lower resistivity than aluminum is now being used as a wiring material. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing.

Specifically, a considerable level of exfoliation characteristics is required for the removal power against etch residue generated after the dry etching process and the corrosion inhibiting ability against metal wiring. In particular, corrosion resistance to copper as well as aluminum is required, and in order to secure price competitiveness, economic efficiency such as increase in the number of processed substrates is also required.

Generally, water-soluble organic amines such as monoethanolamine, monoisopropanolamine, and organic solvents such as gamma-butyllactone and DMSO are used to remove the resist. In addition, various types of corrosion inhibitors such as catechol, resorcinol, and benzotriazole are generally used to inhibit metal corrosion caused by amines, and a photoresist stripper composition containing the same has been proposed.

However, conventional photoresist stripper liquid compositions are known to have problems such as corrosion performance, the number of treatments, and low stability in process or long-term storage. For example, Korean Patent Laid-Open Publication No. 10-2006-0117666 discloses a photoresist stripping liquid composition containing the same compound as Chemical Formula 1 of the present invention and an organic amine compound as an active ingredient, Two or more kinds of corrosion inhibitors are required as a requisite. Therefore, there is a problem that the corrosion inhibitor is likely to remain in the wiring after the peeling process, and also deteriorates the performance of the peeling solution, such as the occurrence of discoloration of the peeling solution and the peeling time of the resist stripping solution composition.

Accordingly, there is a need to develop a resist stripping liquid composition that solves the above-described problems of the prior art and has not only excellent system effect but also quick and excellent stripping properties.

Korean Patent Publication No. 10-2006-0117666

The present invention has been conceived in order to solve the above problems of the prior art, and it is an object of the present invention to provide a resist composition which not only has excellent resist removing ability, but also has excellent corrosion resistance against metal wiring including aluminum and / It is an object of the present invention to provide a resist stripper composition that effectively remains on the surface of a substrate and effectively prevents stains from forming upon contact with deionized water.

It is another object of the present invention to provide a method of manufacturing a flat panel display substrate using the composition, and a flat panel display substrate manufactured by the method.

According to the present invention,

(A) represented by the following general formula (1);

Alkanolamines (B) comprising a primary alkanolamine and a tertiary alkanolamine;

Primary alcohols (C); And

A resist stripper composition comprising a non-polar protic solvent (D) is provided:

[Chemical Formula 1]

In Formula 1,

R 1 to R 8 are each independently hydrogen or a C 1 to C 4 alkyl group.

In addition,

And a step of cleaning the flat panel display substrate using the resist stripping liquid composition.

In addition,

A flat panel display substrate manufactured by the above manufacturing method is provided.

Since the resist stripper composition according to the present invention has an excellent resist removing ability, it effectively removes the resist and minimizes corrosion of metal wiring such as aluminum and / or copper in the stripping process. Particularly, Thereby providing an effect of preventing stains from forming upon contact with ionized water.

(A) represented by the following general formula (1);

Alkanolamines (B) comprising a primary alkanolamine and a tertiary alkanolamine;

Primary alcohols (C); And

A resist stripper composition comprising a non-polar protic solvent (D) is provided:

[Chemical Formula 1]

In Formula 1,

R 1 to R 8 are each independently hydrogen or a C 1 to C 4 alkyl group.

Hereinafter, each component will be described in detail.

(A) a compound represented by the formula (1)

The resist stripping composition of the present invention comprises a compound (A) represented by the following formula (1).

[Chemical Formula 1]

In Formula 1,

R 1 to R 8 are each independently hydrogen or a C 1 to C 4 alkyl group.

The compound (A) represented by the above formula (1) is included in the resist stripping liquid composition and plays a role of improving the damping force of the metal wiring.

Examples of the compound represented by Formula 1 include 4-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7 -Tetrahydro-1H-benzo [1,2,3] triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H- benzo [1,2,3] triazole and 4,6 -Dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, and the like. These may be used alone or in combination of two or more.

The compound (A) represented by the formula (1) is preferably contained in an amount of 0.0001 to 0.1% by weight, more preferably 0.001 to 0.1% by weight, more preferably 0.003 to 0.05% by weight based on the total weight of the resist stripper composition. Is most preferable. When the content of the compound represented by the above formula (1) is less than 0.0001% by weight, a partial corrosion phenomenon may occur in the metal wiring when the metal wiring is in contact with the peeling liquid for a long time. If it exceeds 0.1% by weight, it may remain in the metal wiring to cause secondary contamination, and the price of the composition increases, which is inefficient in terms of price and performance.

(B) Primary Alkanolamine  And tertiary Alkanolamine  Included Alkanolamines

The alkanolamines are used for improving the peeling force and preventing the occurrence of stains.

The primary alkanolamine can penetrate strongly into the polymer matrix of the resist or crosslinked resist under various process conditions such as dry or wet etching, ashing or ion implant processing, It serves to break the bond existing between molecules. An empty space is formed in a structurally weak portion in the resist remaining on the substrate, thereby deforming the resist into an amorphous polymer gel mass state so that the resist attached on the substrate can be easily removed.

Representative examples of the primary alkanolamine include, but are not limited to, monoethanolamine, monoisopropanolamine, 2- (2-aminoethoxy) ethanol, and the like. The primary alkanolamine may be used alone or in combination of two or more.

The tertiary alkanolamine serves to prevent stains that are generated when the dissolved resist remains on the surface of the substrate to contact deionized water. The tertiary alkanolamine may be represented by the following Formula 2:

In the above formula

R9, R10 and R11 are each independently an alkyl group having 1 to 4 carbon atoms or a hydroxyalkyl group having 1 to 4 carbon atoms; and at least one of R9, R10 and R11 is a hydroxyalkyl group having 1 to 4 carbon atoms.

Of the compounds of formula (2), methyldiethanolamine, dimethylethanolamine, triethanolamine and the like are more preferably used.

In the alkanolamines, the content of the primary alkanolamine and the tertiary alkanolamine may be increased when the effect of improving the peeling force is further demanded, and the content of the primary alkanolamine should be increased. Can be adjusted in such a way as to increase the content of alkanolamine.

The primary alkanolamine and the tertiary alkanolamine may be contained in a weight ratio of 1: 0.1 to 0.1: 1, and more preferably in a weight ratio of 1: 0.2 to 0.2: 1.

The alkanolamines are preferably contained in an amount of 0.01 to 10% by weight, and more preferably 1 to 8% by weight based on the total weight of the resist stripper composition. If the content of the alkanolamines is less than 0.01% by weight, the resist peeling force may cause a problem of foreign matter residues remaining. If the content of alkanolamines is more than 10% by weight, a rapid increase in the corrosion rate to metal wiring may be caused.

(C) Primary alcohols

The primary alcohol serves to dissolve the solidified resist polymer contained in the resist stripper composition and facilitates the removal of the stripper by water in the rinsing process of deionized water (DIW) after resist stripping, Thereby minimizing redeposition of the resist dissolved in the resist.

The primary alcohols include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, di Ethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol Polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, diethylene glycol, triethylene glycol, isopropyl glycol, and the like, as well as organic solvents such as ethylene glycol monobutyl ether, ethylene glycol monobutyl ether, Alkylene glycol primary alcohols; And

Tetrahydrofurfuryl alcohol, hydroxymethylcyclopentene, 4-hydroxymethyl-1,3-dioxolane, 2-methyl-4-hydroxymethyl-1,3-dioxolane, 2,2- Except for the alkylene glycol primary alcohols including 3-dioxolane-4-methanol, 1,3-propanediol, 1,3-butanediol, 1,4-butanediol, 2- It is preferable to include at least one member selected from the group consisting of alcohol and alcohols.

The primary alcohols excluding the alkylene glycol primary alcohols and the alkylene glycol primary alcohols are preferably contained in a weight ratio of 1: 0.1 to 0.1: 1, and a weight ratio of 1: 0.2 to 0.2: 1 More preferably, When the weight ratio is in the above range, solubilization of the solidified resist polymer is easy, and secondary resorption of the resist polymer is prevented in the cleaning step after peeling, thereby reducing secondary contamination.

The primary alcohol is preferably contained in an amount of 20 to 85% by weight based on the total weight of the resist stripper composition, more preferably 30 to 80% by weight. When it is included in the range as described above, it is easy to remove the peeling liquid by water in the DIW rinse process.

(D) Magnetostrictive  Polar solvent

The aprotic polar solvent (D) advantageously exhibits the removal performance of the polymer degraded or crosslinked by etching or the like in the stripper solution composition, and at the same time, the effect of increasing the number of treatments of the resist stripper solution is improved.

The aprotic polar solvent serves to dissolve the resist polymer gelled by the alkaline compound and smoothly disperses the photoresist to solvation. In other words, as an organic solvent highly effective in dissolving a photoresist, it is a component which accelerates the penetration of an alkaline compound into a solidified photoresist and improves the peeling performance. In addition, it facilitates the removal of the peeling liquid by the water during the rinsing of the deionized water after the peeling of the resist, thereby minimizing the re-adsorption / reattaching of the peeling liquid and the dissolved resist.

The aprotic polar solvent may preferably be used in which the boiling point is not too high or low for proper peeling force, and may be used alone or in combination of two or more.

Preferable examples of the aprotic polar solvent include pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethyl sulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; Carbonate compounds such as dimethyl carbonate, ethylene carbonate, and the like; N, N-dimethylacetamide, N, N-dimethylformamide, N, N-diethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N , N-dimethylpropionamide, N- (2-hydroxyethyl) acetamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, Amide compounds such as 3-butoxy-N, N-dimethylpropionamide; These may be used singly or in combination of two or more.

The amount of the aprotic polar solvent (D) is preferably 5 to 75% by weight, more preferably 10 to 60% by weight based on the total weight of the resist stripper composition. When it is contained in the above-mentioned range, it is advantageous also in manifesting the removal performance of the resist polymer modified or crosslinked by etching or the like.

The resist stripping composition of the present invention may further comprise at least one member selected from the group consisting of a corrosion inhibitor (E) and deionized water (F).

The corrosion inhibitor (E) is further included in the resist stripper composition to improve corrosion resistance of metal wiring including aluminum and / or copper.

Examples of the corrosion inhibitor include monocarboxylic acids such as formic acid, acetic acid and propionic acid, dicarboxylic acids such as malic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimetic acid, maleic acid, fumaric acid and glutaconic acid Tricarboxylic acids such as trimellitic acid, trimellitic acid and tricarvaleric acid, and organic acids such as hydroxyacetic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, gluconic acid and oxycarboxylic acid;

Maleic amide esters, maleic amide esters, maleic amide esters, fumaric amide esters, oxalic amide esters, malonic amide esters, glutaric amide esters, acetic amide esters, lactic amide esters, Organic acid amide esters such as tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters, tartaric amide esters,

2,2 '- [[[[[benzotriazole] methyl] imino] bisethanol, 2,2' - [[[methyl-1-hydrogen-benzotriazole Yl] methyl] imino] bisethanol, 2,2 '- [[[ethyl-1-hydrogen-benzotriazol- Methyl-imino] biscarboxylic acid [methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol and 2,2 '- [[ Methyl] imino] bismethylamine and 2,2 '- [[[amine-1-hydrogen-benzotriazol-1-yl] Methyl] imino] bisethanol 4-methyl-1-hydrogen-benzotriazole and 5-methyl-1-hydrogen-benzotriazole;

2,6-dimethylphenol, 2,4,6-trimethylphenol, 2,6-diethylphenol, 2,6-diethyl-4-methylphenol, 4-methylphenol, 2,6-di-t-butylphenol, 2,4,6-tri-t-butylphenol and 2,6- ; But is not limited thereto. These may be used singly or in combination of two or more.

The corrosion inhibitor is preferably contained in an amount of 3% by weight or less based on the total weight of the resist stripper composition, more preferably 0.001 to 2% by weight. When it is included in the range as described above, it is possible to prevent corrosion occurring in the metal wiring made of aluminum or aluminum alloy and copper or copper alloy in the peeling or DIW rinse process.

The deionized water (F) is further contained in the resist stripping liquid composition to promote the activation of the alkaline compound (B) to increase the stripping rate. In the rinsing process with deionized water (DIW) It is possible to quickly and completely remove the organic contaminants and the resist stripping solution remaining in the resist film. In addition, the mixing of the primary alcohol with the aprotic polar solvent is facilitated, so that it can be completely removed in a short time without remaining in the rinsing process by deionized water after the peeling process.

The deionized water is preferably contained in an amount of 70% by weight or less based on the total weight of the resist stripper composition, more preferably 1 to 45% by weight. If it is contained in an amount exceeding 70% by weight, the resist dissolution capacity can be reduced to reduce the number of treatments, and corrosion of the metal wiring can be caused when the substrate is immersed for a long time.

The resist stripping solution composition of the present invention can be prepared by mixing the above-mentioned compounds with a certain amount, and the mixing method is not particularly limited and various known methods can be applied without limitation.

As a method for removing the resist using the resist stripping liquid composition for a flat panel display of the present invention, a dipping method is generally used, but other methods such as a spraying method may also be used. As the cleaning agent after treatment with the composition according to the present invention, it is not necessary to use an organic solvent such as alcohol, and it is sufficient to wash with water.

In addition,

There is provided a method of manufacturing a flat panel display substrate including a step of cleaning a flat panel display substrate using the resist stripping liquid composition of the present invention and a flat panel display substrate manufactured by the manufacturing method.

The resist stripping liquid composition of the present invention can be usefully used in a process for removing a resist for a flat panel display, and can also be used for semiconductors or other electronic products.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the scope of the present invention is not limited by the following examples and comparative examples, and various modifications and changes may be made.

Example  1 to 10 and Comparative Example  1 to 5: Resist Peeling liquid  Preparation of composition

The ingredients and the contents shown in Table 1 below were mixed to prepare a resist stripper composition.

division (a) Compound (1) (b) a mixture of primary and tertiary alkanolamine (c) Primary alcohols (d) an aprotic polar solvent Corrosion inhibitor Deionized water [weight%] [weight%] [weight%] [weight%] [weight%] [weight%] Example 1 MTBT 0.005 AEE
MDEA 5
3 EDG 70 NMP 21.995 - - - Example 2 MTBT 0.01 AEE
MDEA 5
2 MDG
EDG 20
20 NMF 52.99 - - - Example 3 MTBT 0.01 MEA
DMEA One
5 EDG
HMDM 50
10 DMPA 33.99 - - - Example 4 MTBT 0.01 MIPA
TEA 4
One HMDM 20 DEF 74.99 - - - Example 5 MTBT 0.01 AEE
MDEA 3
2 THFA
EDG 30
55 NMP 9.99 - - - Example 6 MTBT 0.01 AEE
MDEA 5
2 EDG 50 NMP
DMPA 22.99
20 - - - Example 7 DMTBT 0.01 AEE
MDEA 3
2 HMDM
THFA 10
20 NMP 64.99 - - - Example 8 MTBT 0.005 MIPA
DMEA 5
5 EDG
HMDM 50
10 NEF 29.985 BTA 0.01 - Example 9 MTBT 0.005 AEE
DMEA 5
5 EDG
HMDM 50
10 NMP 29.975 BTA
tBMP 0.01
0.01 Example 10 MTBT 0.01 AEE
MDEA One
3 EDG 30 NMP 35.98 tBMP 0.01 30 Comparative Example 1 - - AEE
MDEA 5
3 EDG 70 NMP 22 - - - Comparative Example 2 - - MEA 5 EDG
HMDM 50
10 NMP 35 - - - Comparative Example 3 MTBT 0.01 MIPA 5 EDG 30 NMP 64.99 - - - Comparative Example 4 MTBT 0.01 DMEA 10 EDG
HMDM 50
10 NMP 29.99 - - - Comparative Example 5 MDEA 10 EDG 30 NMP 60 - - -

(Unit: wt%)

: MTBT: 4-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

DMTBT: 5,6-Dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole

MDEA: N-methyldiethanolamine

DMEA: N, N-dimethylethanolamine

TEA: triethanolamine

AEE: 2- (2-aminoethoxy) ethanol

EDG: diethylene glycol monoethyl ether

MDG: diethylene glycol monomethyl ether

NMF: N-methylformamide

NEF: N-ethylformamide

DMPA: N, N-dimethylpropionamide

NMP: N-methylpyrrolidone

THFA: tetrahydroperfuryl alcohol

HMDM: 4-hydroxymethyl-2,2-dimethyl-1,3-dioxolane

BTA: benzotriazole

tBMP: t-Butyl-4-methoxyphenol

MIPA: Monoisopropanolamine

Test Example : Resist Peeling liquid  Evaluation of composition characteristics

Test Example  One. Resist Peeling liquid  Of the composition Peel force  evaluation

In order to evaluate the peeling force of the resist stripping liquid compositions of Examples 1 to 10 and Comparative Examples 1 to 5, the following experiment was conducted.

After a photoresist pattern is formed after a Mo / Al / Mo or Cu / Ti layer is formed on a glass substrate by a thin film sputtering method according to a conventional method, the metal film is etched by a wet etching method and a dry etching method Respectively. After the temperature of the resist stripping composition of each of Examples 1 to 10 and Comparative Examples 1 to 5 was kept constant at 50 占 폚, the object was immersed for 5 minutes to evaluate the peeling force.

Then, the substrate was cleaned with pure water for 1 minute to remove the peeling liquid remaining on the substrate, and the substrate was completely dried with nitrogen to remove pure water remaining on the substrate after cleaning. The denaturation of the substrate or the removal performance of the cured resist and the dry etching residue was confirmed using a scanning electron microscope (SEM, Hitachi S-4700), and the results are shown in Table 2 below.

[Evaluation criteria for peel strength]

◎: Very good

○: Good

DELTA: presence of some residues, normal

X: Residual irreversible, defective

Test Example  2. Resist Peeling liquid  Evaluation of stain improvement of composition

In order to evaluate the degree of smear caused by the contact between the dissolved resist stripping liquid and the deionized water remaining on the substrate after the stripping process, a resist patterned substrate was prepared and baked at 50 ° C in the same manner as in Examples 1 to 10, The substrate for 5 minutes was immersed in the resist stripper solution composition for 5 minutes, removed, and subjected to decantation, and then contacted with deionized water for 1 minute, followed by washing with deionized water for 1 minute. After cleaning, the substrate was thoroughly dried with nitrogen to remove deionized water remaining on the substrate, and the degree of staining was confirmed using a halogen lamp. The results are shown in Table 1 below.

[Evaluation criteria for improvement of stain]

◎: Very good

○: Good

△: Normal

X: Bad

Test Example  3. Resist Peeling liquid  The metal wiring of the composition Revolution  evaluation

The following experiments were conducted to evaluate the corrosion inhibiting ability of the resist stripper composition of Examples 1 to 10 and Comparative Examples 1 to 5 on the metal wiring.

The temperature of the resist stripping solution compositions of Examples 1 to 10 and Comparative Examples 1 to 5 was maintained at a constant temperature of 50 占 폚, and then the substrate on which the Cu wiring was exposed was immersed for 10 minutes. Thereafter, washing and drying were carried out, and a hydrostatic force was confirmed using a scanning electron microscope (SEM, Hitach S-4700). The results are shown in Table 2 below.

[Evaluation Criteria of Fuel Efficiency]

◎: No corrosion, very good

○: Almost no corrosion, good

?: Partial corrosion, surface roughness change, normal

X: Corrosion and etching occurrence, bad

division Peel force Improve stain Revolution Mo Cu Al Cu Example 1 ◎ ◎ ◎ ◎ ◎ Example 2 ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ○ ◎ Example 5 ◎ ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ ◎ Example 8 ◎ ◎ ◎ ○ ◎ Example 9 ◎ ◎ ◎ ○ ◎ Example 10 ◎ ◎ ◎ ◎ ◎ Comparative Example 1 ◎ ◎ ◎ △ X Comparative Example 2 ◎ ◎ X X X Comparative Example 3 ◎ ◎ X ○ ◎ Comparative Example 4 X X △ ◎ ◎ Comparative Example 5 X X ○ ◎ △

As shown in the experimental results of Table 2, it was confirmed that the peeling liquid compositions of Examples 1 to 10 exhibited excellent peel strength in both Mo / Al / Mo and Cu / Ti wiring formation substrates. Also, the etching effect on Cu and Al metal wiring was also excellent.

On the other hand, the compositions of Comparative Examples 1 to 5 exhibited a peeling effect similar to that of the present invention, but showed a remarkably low effect in the improvement of stain. In particular, in the case of Comparative Examples 4 and 5, the tertiary alkanolamine was used alone, but the effect of improving the stain was low as compared with the examples of the present invention. These results show that a synergistic effect is obtained in improving the stain when the primary and tertiary alkanolamines are mixed and used. The compositions of Comparative Examples 1 to 5 exhibited a detrimental effect on the peeling force and the evaluation of the damping force.

Claims (12)

(A) represented by the following general formula (1);
Alkanolamines (B) comprising a primary alkanolamine and a tertiary alkanolamine;
Primary alcohols (C); And
Resist stripper liquid composition comprising aprotic polar solvent (D):
[Chemical Formula 1]

In Formula 1,
R 1 to R 8 are each independently hydrogen or a C 1 to C 4 alkyl group.
The method according to claim 1,
The compound (A) can be obtained by reacting 4-methyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole, 5-methyl-4,5,6,7-tetrahydro-1H -Benzo [1,2,3] triazole, 5,6-dimethyl-4,5,6,7-tetrahydro-1H-benzo [1,2,3] triazole and 4,6- 5,6,7-tetrahydro-1H-benzo [1,2,3] triazole.
The method according to claim 1,
About the total weight of the composition
0.0001 to 0.1% by weight of a compound (A) represented by the following formula (1); 0.01 to 10% by weight of alkanolamines (B) containing a primary alkanolamine and a tertiary alkanolamine; 20 to 85% by weight of primary alcohols (C); And 5 to 75% by weight of an aprotic polar solvent (D).
The method of claim 3,
Wherein the alkanolamines (B) comprise a primary alkanolamine and a tertiary alkanolamine in a weight ratio of 1: 0.1 to 0.1: 1.
The method of claim 3,
Wherein the primary alcohol (C) comprises an alkylene glycol primary alcohol and a primary alcohol excluding the alkylene glycol primary alcohol at a weight ratio of 1: 0.1 to 0.1: 1. / RTI >
The method of claim 4,
The primary alkanolamine is at least one selected from the group consisting of monoethanolamine, isopropanolamine, and 2- (2-aminoethoxy) ethanol,
Wherein the tertiary alkanolamine is at least one selected from the group consisting of methyldiethanolamine, dimethylethanolamine, and triethanolamine.
The method according to claim 1,
The primary alcohol (C) is at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether , Diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol Triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, diethylene glycol, triethylene glycol, isopropyl glycol, diethylene glycol, triethylene glycol monobutyl ether, Tetrahydroperfuryl alcohol, hydroxymethylcyclopentene, 4-hydroxymethyl-1,3-dioxolane, 2-methyl-4-hydroxymethyl- Dioxolane-4-methanol, 1,3-propanediol, 1,3-butanediol and 1,4-butanediol, 2-methoxyethanol, Wherein the resist stripping liquid composition comprises at least one type of resist stripping liquid composition.
The method according to claim 1,
The aprotic polar solvent (D) is characterized in that it is at least one selected from the group consisting of a pyrrolidone compound, an imidazolidinone compound, a lactone compound, a sulfoxide compound, a phosphate compound, a carbonate compound and an amide compound The resist stripping liquid composition comprising:
The method according to claim 1,
Wherein the resist stripping liquid composition further comprises at least one selected from the group consisting of a corrosion inhibitor and deionized water.
The method of claim 9,
The corrosion inhibitor is included in an amount of 3% by weight or less based on the total weight of the resist stripper composition;
Wherein the deionized water is contained in an amount of 70 wt% or less based on the total weight of the resist stripper composition.
A method for manufacturing a flat panel display substrate comprising the step of cleaning a flat panel display substrate using the resist stripping liquid composition according to any one of claims 1 to 10.
A flat panel display substrate produced by the method of claim 11.