CN102806217A - Method for washing silicon wafer by organic solvent - Google Patents
Method for washing silicon wafer by organic solvent Download PDFInfo
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- CN102806217A CN102806217A CN2012102984487A CN201210298448A CN102806217A CN 102806217 A CN102806217 A CN 102806217A CN 2012102984487 A CN2012102984487 A CN 2012102984487A CN 201210298448 A CN201210298448 A CN 201210298448A CN 102806217 A CN102806217 A CN 102806217A
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- silicon wafer
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- organic solvent
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Abstract
The invention discloses a method for washing a silicon wafer by an organic solvent, and relates to a silicon wafer washing technology. The method, in sequence, comprises the following steps: (a) after taking the silicon wafer from a mortar liquid; immediately putting the silicon wafer into hot water at 50-100 DEG C; and ultrasonically washing the silicon wafer for 10-30 minutes; and (b) putting the silicon wafer into an organic washing liquid YB and ultrasonically washing the silicon wafer for more than 30 minutes at 30-75 DEG C, wherein the organic washing liquid YB is an aqueous solution with organic ethanol and acetone as a solute; and the frequency of ultrasonic waves is 28-40 kHz; and the power is 2500-3000 W. The method for washing the silicon wafer by the organic solvent, disclosed by the invention, has the advantages as follows: smudges on the surface of the silicon wafer can be easily washed and the original mechanical damage layer of the silicon wafer is kept. It is shown by detection that the reflectivity of the silicon wafer is further reduced by about 2% in the later section of the texture acid-etching process. The washing efficiency is increased without introducing impurity ions; and washing cost and pollution are reduced.
Description
Technical field
The present invention relates to the manufacturing technology field of solar energy-level silicon wafer, particularly the silicon chip cleaning technique.
Background technology
Solar energy-level silicon wafer is a solar cell making herbs into wool section owing to processing the back hypomere; Main crystal defect and the silicon chip surface damage layer that relies on silicon chip in sour making herbs into wool process; So when silicon chip cleans, should clean up silicon chip surface is dirty, and can not destroy silicon chip surface damage layer.
The cleaning method of silicon chip is at present: the silicon wafer cleaning method of pickling or alkali cleaning and silicon chip reaction.Be that acid solution or alkaline solution all are bound to destroy the mechanical damage layer that stays in the silicon chip manufacture process; But in the sour making herbs into wool process of back segment; Acid solution mainly relies on the crystal defect of silicon chip and mechanical damage layer to carry out making herbs into wool, can't guarantee the making herbs into wool effect so be inorganic cleaning fluid acid or alkalescence.
And use the organic washing agent, just can overcome the defective of above existence.
Summary of the invention
The purpose of this invention is to provide a kind of method of carrying out the silicon chip cleaning with organic solvent; The method can clean up the dirty of silicon chip surface easily; And kept silicon chip original mechanical damage layer, made silicon chip many reductions about 2% of reflectivity in back segment acid making herbs into wool process.Not only cleaning efficiency improves, and can not introduce foreign ion, has reduced cleaning cost and pollution.
For realizing the foregoing invention purpose, the present invention adopts following technical scheme:
Carry out the method that silicon chip cleans with organic solvent, it is characterized in that carrying out successively following steps: after a silicon chip takes out, put into 50-100 degree centigrade hot pure water ultrasonic cleaning immediately from particle loaded fluid, cleaned 10-30 minute; After the b, silicon chip is put into organic cleaning fluid YB, when temperature is 30-75 degree centigrade, carries out ultrasonic cleaning, cleans more than 30 minutes; Wherein: said organic cleaning fluid YB is that organic molten thing ethanol and acetone are the aqueous solution of solute; When solution mixed, concentration of ethanol was more than 95%, and ethanol proportion in liquor capacity is 44%-75%, and the concentration of acetone is more than 99%, and acetone proportion in liquor capacity is more than 10%, and all the other are pure water; Said frequency of ultrasonic 28-40kHz, power are 1000-3000W.
Further:
Said frequency of ultrasonic is 40kHz; Power is 2500-3000W.
The invention has the beneficial effects as follows: because; The first step has mainly been cleaned silicon chip surface institute metal remained bits and mortar; Second step was mainly cleaned the greasy dirt and the organic solvent of silicon chip surface; Thereby the method can clean up the dirty of silicon chip surface easily, and has kept silicon chip original mechanical damage layer.Through detecting, make silicon chip many reductions about 2% of reflectivity in back segment acid making herbs into wool process.Not only cleaning efficiency improves, and can not introduce foreign ion, has reduced cleaning cost and pollution.
The specific embodiment
In order to make those skilled in the art person understand the present invention program better, and make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below in conjunction with embodiment the present invention done further detailed explanation.
Embodiment:
At first silicon chip should be put into 50 to 100 degrees centigrade hot water immediately and carries out ultrasonic cleaning after section, and cleaned silicon chip should be put into temperature ultrasonic cleaning in 45 to 75 degrees centigrade YB cleaning fluid immediately.The YB cleaning fluid should be prepared at normal temperatures, and preparing required solvent is ethanol and acetone, and ethanol proportion in liquor capacity is 45% to 75%, and acetone proportion in liquor capacity is more than 10%.
The time of YB ultrasonic cleaning decides according to the silicon chip situation.From particle loaded fluid, take out the back at silicon chip and expose the airborne time, and under the dirty many situation in surface, the time is more than 45 minutes above more than half an hour; After silicon chip takes out from particle loaded fluid, clean immediately, and under the dirty less situation in surface, the time is more than 30 minutes.
The above; Be merely the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (2)
1. carry out the method that silicon chip cleans with organic solvent, it is characterized in that carrying out successively following steps: after a silicon chip takes out, put into 50-100 degree centigrade hot pure water ultrasonic cleaning immediately from particle loaded fluid, cleaned 10-30 minute; After the b, silicon chip is put into organic cleaning fluid YB, when temperature is 30-75 degree centigrade, carries out ultrasonic cleaning, cleans more than 30 minutes; Wherein: said organic cleaning fluid YB is that organic molten thing ethanol and acetone are the aqueous solution of solute; When solution mixed, concentration of ethanol was more than 95%, and ethanol proportion in liquor capacity is 44%-75%, and the concentration of acetone is more than 99%, and acetone proportion in liquor capacity is more than 10%, and all the other are pure water; Said frequency of ultrasonic 28-40kHz, power are 1000-3000W.
2. method of carrying out the silicon chip cleaning according to claim 1 with organic solvent, it is characterized in that: described frequency of ultrasonic is 40kHz; Power is 2500-3000W.
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CN2012102984487A CN102806217A (en) | 2012-08-21 | 2012-08-21 | Method for washing silicon wafer by organic solvent |
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CN2012102984487A CN102806217A (en) | 2012-08-21 | 2012-08-21 | Method for washing silicon wafer by organic solvent |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103611700A (en) * | 2013-11-19 | 2014-03-05 | 奥特斯维能源(太仓)有限公司 | Cleaning process for corrosive sizing agents for hole forming in films |
CN103934234A (en) * | 2014-04-11 | 2014-07-23 | 元亮科技有限公司 | Cleaning technology of polished wafer containing box |
CN104162521A (en) * | 2014-08-11 | 2014-11-26 | 贵州西牛王印务有限公司 | Method for cleaning organic compound detection bottles through ultrasonic waves |
CN113695307A (en) * | 2020-05-20 | 2021-11-26 | 天津嘉林科医有限公司 | Method for cleaning glassware containing atorvastatin calcium |
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JPH04219182A (en) * | 1990-12-18 | 1992-08-10 | Mitsubishi Heavy Ind Ltd | Washing method |
JPH05308067A (en) * | 1992-05-01 | 1993-11-19 | Hitachi Ltd | Ultrasonic washing device and method |
CN101154558A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning etching equipment component |
CN101217102A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A method to remove surface contaminations on surfaces of semiconductor accessories |
CN101942365A (en) * | 2010-03-10 | 2011-01-12 | 宁波太阳能电源有限公司 | Silicon wafer cleaning solution and method for cleaning silicon wafers using same |
CN102044407A (en) * | 2009-10-20 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of chip |
CN102185013A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Silicon wafer finger print removing method and cleaning method |
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2012
- 2012-08-21 CN CN2012102984487A patent/CN102806217A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04219182A (en) * | 1990-12-18 | 1992-08-10 | Mitsubishi Heavy Ind Ltd | Washing method |
JPH05308067A (en) * | 1992-05-01 | 1993-11-19 | Hitachi Ltd | Ultrasonic washing device and method |
CN101154558A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning etching equipment component |
CN101217102A (en) * | 2007-01-04 | 2008-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A method to remove surface contaminations on surfaces of semiconductor accessories |
CN102044407A (en) * | 2009-10-20 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of chip |
CN101942365A (en) * | 2010-03-10 | 2011-01-12 | 宁波太阳能电源有限公司 | Silicon wafer cleaning solution and method for cleaning silicon wafers using same |
CN102185013A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Silicon wafer finger print removing method and cleaning method |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103611700A (en) * | 2013-11-19 | 2014-03-05 | 奥特斯维能源(太仓)有限公司 | Cleaning process for corrosive sizing agents for hole forming in films |
CN103934234A (en) * | 2014-04-11 | 2014-07-23 | 元亮科技有限公司 | Cleaning technology of polished wafer containing box |
CN103934234B (en) * | 2014-04-11 | 2016-01-06 | 元亮科技有限公司 | A kind of cleaning of polished silicon wafer slide cassette |
CN104162521A (en) * | 2014-08-11 | 2014-11-26 | 贵州西牛王印务有限公司 | Method for cleaning organic compound detection bottles through ultrasonic waves |
CN113695307A (en) * | 2020-05-20 | 2021-11-26 | 天津嘉林科医有限公司 | Method for cleaning glassware containing atorvastatin calcium |
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Application publication date: 20121205 |