CN101942365A - Silicon wafer cleaning solution and method for cleaning silicon wafers using same - Google Patents
Silicon wafer cleaning solution and method for cleaning silicon wafers using same Download PDFInfo
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- CN101942365A CN101942365A CN 201010121960 CN201010121960A CN101942365A CN 101942365 A CN101942365 A CN 101942365A CN 201010121960 CN201010121960 CN 201010121960 CN 201010121960 A CN201010121960 A CN 201010121960A CN 101942365 A CN101942365 A CN 101942365A
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Abstract
The invention discloses silicon wafer cleaning solution and a method for cleaning silicon wafers using the same. The silicon wafer cleaning solution is prepared by mixing the raw materials by mass percent: 7-12% of ethanol, 3-7% of acetone, 1-3% of sodium silicate and the balance deionized water. The silicon wafer cleaning solution has the advantages that the acetone in the cleaning solution can help remove organic matters on the silicon wafers, as residual organic impurities on the silicon wafers mainly comprise glue, synthetic wax, oil, fiber and cutting fluid residue, the impurities can be preferably dissolved by the acetone; the ethanol in the cleaning solution can help effectively remove the residual acetone on the surfaces of the cleaned silicon wafers; in addition, the sodium silicate can help lower reaction speed so as to reduce damage to the silicon wafers. While washing the silicon wafers, firstly inorganic impurities on the silicon wafers are removed by the deionized water, and then the silicon wafers are cleaned with the cleaning solution to remove the organic impurities on the silicon wafers.
Description
Technical field
The present invention relates to silicon chip cleaning in a kind of semiconductor fabrication process, especially relate to a kind of silicon chip cleaning liquid and use the method for this scavenging solution cleaning silicon chip.
Background technology
Along with the exhaustion day by day of conventional energy resources, sun-generated electric power easy to clean more and more is subjected to people's attention.In the solar cell process industry, silicon chip is as the core component of solar cell, and the quality of its various performance perameters directly influences the generating efficiency of solar cell.The preparation process of solar cell is generally: preceding Dow Chemical pre-treatment; Diffusion system PN junction; The trimming knot is handled (going PSG technology); Plating silicon nitride film (ARC technology); Silk screen printing just, backplate; Sintering and electrode metalization and silicon nitride film burn processing.Wherein, preceding Dow Chemical pretreatment technology comprises silicon chip cleaning and leather producing process, the quality that silicon chip cleans has a significant impact later stage making herbs into wool, and good matte can reduce luminous reflectance better, improve the generating efficiency of solar cell, so the result that silicon chip cleans there is greatly influence to the Solar cell performance quality.
Silicon rod is through after the slicing treatment, be cut into thickness and be the silicon chip about 200 μ m, usually can there be various impurity above the silicon chip that cuts, these impurity generally derive from metallic particles, the residue of cutting fluid and the various contamination precipitations in the handling process etc. of line of cut and silicon chip wearing and tearing, the existence of these impurity will influence the complete processing in later stage, therefore in the preparation technology of solar cell, the silicon chip cleaning is vital.
At present, silicon chip cleaning commonly used generally all adopts deionized water, hydrofluoric acid and ethanol to clean, and detailed process is: at first use the deionized water cleaning silicon chip, physical particles such as some metallicss on the silicon chip, dust are cleaned up; Use hydrofluoric acid and alcoholic acid mixing solutions then, cleaning silicon chip cleans up the organic impurity on the silicon chip at a certain temperature.As the disclosed application number of China is that (publication number is: CN101503650 for 200810067515.8 application for a patent for invention " silicon chip cleaning liquid and purging method thereof ", open day be: 2009.08.12), it discloses a kind of silicon chip cleaning liquid, mainly be made into through mixing by ethanol and hydrofluoric acid, the volume ratio of ethanol and hydrofluoric acid is 35～45: 1, the alcoholic acid mass percent concentration is 18%～100%, and hydrofluoric acid is made into by hydrogen fluoride and deionized water, and its mass percent concentration is 48%～50%; The method that it also discloses a kind of cleaning silicon chip comprises step: use the deionized water cleaning silicon chip; Adopt above-mentioned silicon chip cleaning liquid cleaning silicon chip.The silicon chip cleaning liquid of this invention and purging method thereof can effectively be removed organism and stain, and improve the back side cleaning performance of hydrofluoric acid clean liquid; But its employed hydrofluoric acid is a kind of toxic volatile liquid that has, has the strong impulse smell, like this in silicon chip cleaning process, the staff very easily sucks the hydrofluoric acid acid mist by respiratory tract, thereby cause diseases such as bronchitis and hemorrhagic pulmonary edema, hydrofluoric acid also can cause serious poisoning through skin absorption; On the other hand, because hydrofluoric acid is strong acid, it easily reacts with metal, so uses the hydrofluoric acid clean silicon chip then quite high to the requirement of rinse bath; In addition, the cutting fluid residue that this purging method brings when being difficult to wash the silicon chip cutting, and the existence of cutting fluid residue will directly influence the technological operation in later stage.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method that can effectively remove the silicon chip cleaning liquid of the lip-deep organic impurity that remains in silicon chip and inorganic impurity etc. and use this scavenging solution cleaning silicon chip.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of silicon chip cleaning liquid, mainly form through mixed preparing by ethanol, acetone, water glass and deionized water, described alcoholic acid mass percent concentration is 7～12%, the mass percent concentration of described acetone is 3～7%, the mass percent concentration of described water glass is 1～3%, and surplus is described deionized water.
Described alcoholic acid mass percent concentration is 10%, and the mass percent concentration of described acetone is 5%, and the mass percent concentration of described water glass is 2%, and surplus is described deionized water.
A kind of method of using above-mentioned silicon chip cleaning liquid cleaning silicon chip may further comprise the steps:
1. use the deionized water cleaning silicon chip;
2. use the described silicon chip cleaning liquid cleaning silicon chip of claim 1.
Described step 2. in during cleaning silicon chip the temperature of silicon chip cleaning liquid be 40～55 ℃.
2. the time of middle cleaning silicon chip is 4～8 minutes to described step.
Compared with prior art, the invention has the advantages that by preparing a kind of new silicon chip cleaning liquid, acetone in this scavenging solution can wash the organism on the silicon chip, because residual organic impurity mainly contains the cutting fluid residue that brings when glue, synthetic wax, grease, fiber and silicon chip cut on the silicon chip, and these organic impuritys can be dissolved in acetone preferably; Residual in its surface acetone after ethanol in the scavenging solution can be removed silicon chip effectively and cleaned because acetone is soluble in ethanol, therefore can clean up acetone residual on the silicon chip surface; In addition, water glass can be extenuated the speed of reaction, thereby has reduced the damage to silicon chip; During cleaning silicon chip, use deionized water that the inorganic impurity on the silicon chip such as dust, metallic particles etc. are washed earlier, re-use above-mentioned scavenging solution and clean, remove the organic impurity on the silicon chip, for the leather producing process of silicon chip has been created good condition, thereby the yield rate and the quality product rate of silicon chip have been improved.Since scavenging solution of the present invention use do not have toxicity, highly acid component, therefore safety relatively not only, and rinse bath do not had special requirement yet.
Embodiment
Below in conjunction with embodiment the present invention is described in further detail.
A kind of silicon chip cleaning liquid, mainly form through mixed preparing by ethanol, acetone, water glass and deionized water, the proportioning of this silicon chip cleaning liquid is: the alcoholic acid mass percent concentration is 7～12%, the mass percent concentration of acetone is 3～7%, the mass percent concentration of water glass is 1～3%, and surplus is a deionized water.
In this specific embodiment, desirable alcoholic acid mass percent concentration is 10%, and the mass percent concentration of acetone is 5%, and the mass percent concentration of water glass is 2%, and surplus is a deionized water.
A kind of method of using above-mentioned silicon chip cleaning liquid cleaning silicon chip may further comprise the steps:
1. at first in a rinse bath, feed a certain amount of deionized water, the height of deionized water in rinse bath need surpass the height of silicon chip, to guarantee that whole silicon wafer is soaked in the deionized water silicon chip is cleaned, inorganics on the silicon chip such as physical particles such as metallics, dust are washed.
2. in another rinse bath, feed above-mentioned silicon chip cleaning liquid then, silicon chip is put into silicon chip cleaning liquid clean.Acetone in the silicon chip cleaning liquid can wash the organism on the silicon chip, because residual organic impurity mainly contains the cutting fluid residue that brings when glue, synthetic wax, grease, fiber and silicon chip cut on the silicon chip, and these organic impuritys can be dissolved in acetone preferably; Residual in its surface acetone after ethanol in the silicon chip cleaning liquid can be removed silicon chip effectively and cleaned because acetone is soluble in ethanol, therefore can clean up acetone residual on the silicon chip surface; In addition, consider that the reaction of organic impurity and acetone in cleaning process and acetone and alcoholic acid reaction are too strong, may damage silicon chip like this, add an amount of water glass and can slow down the carrying out of reaction, thereby reduced damage silicon chip.
In this specific embodiment, the Controllable Temperature of silicon chip cleaning liquid is in 40～55 ℃ of scopes during cleaning silicon chip, and the time of cleaning silicon chip can be controlled in 4～8 minutes scopes.
In this specific embodiment, according to the similar rule that mixes, organism such as glue, synthetic wax, grease, the cutting fluid residue that brings when fiber and silicon chip cutting etc. is soluble in acetone, and be difficult to water-soluble, therefore the amount of acetone can not be very little among the present invention, words very little can not effectively wash the organic substance residues thing on the silicon chip, can mix with any ratio with water because contain the ethanol of hydroxyl again, so so not only can organic impurity be removed fully by acetone, and also can clean up the acetone of staying on the silicon chip by ethanol, therefore the alcoholic acid amount can not be very little, if very little acetone just left behind easily, again because the reaction of organic impurity and acetone and acetone react too acutely with alcoholic acid and have certain negative effect in cleaning process, therefore the present invention can control the speed of response of scavenging solution well by adding an amount of water glass, so the amount of water glass can not be very little.
Through repeatedly experiment and practical application, the temperature and the scavenging period of scavenging solution are concrete listed as table 1 when having provided proportioning, the cleaning silicon chip of several groups of silicon chip cleaning liquids in this specific embodiment.
The proportioning of table 1 silicon chip cleaning liquid, the temperature of scavenging solution and scavenging period tabulation
| Sequence | Alcoholic acid mass percent concentration (%) | The mass percent concentration of acetone (%) | The mass percent concentration of water glass (%) | The temperature of scavenging solution (℃) | Scavenging period (minute) |
| 1? | 7? | 3? | 1? | 55? | 8? |
| 2? | 9? | 4.5? | 1.5? | 50? | 6? |
| 3? | 10? | 5? | 2? | 50? | 5? |
| 4? | 11? | 6? | 2.5? | 45? | 5? |
| 5? | 12? | 7? | 3? | 40? | 4? |
Claims (5)
1. silicon chip cleaning liquid, it is characterized in that mainly forming through mixed preparing by ethanol, acetone, water glass and deionized water, described alcoholic acid mass percent concentration is 7～12%, the mass percent concentration of described acetone is 3～7%, the mass percent concentration of described water glass is 1～3%, and surplus is described deionized water.
2. a kind of silicon chip cleaning liquid according to claim 1, it is characterized in that described alcoholic acid mass percent concentration is 10%, the mass percent concentration of described acetone is 5%, and the mass percent concentration of described water glass is 2%, and surplus is described deionized water.
3. method of using the described silicon chip cleaning liquid cleaning silicon chip of claim 1 is characterized in that may further comprise the steps:
1. use the deionized water cleaning silicon chip;
2. use the described silicon chip cleaning liquid cleaning silicon chip of claim 1.
4. the method for a kind of cleaning silicon chip according to claim 3, the temperature of silicon chip cleaning liquid is 40～55 ℃ when it is characterized in that cleaning silicon chip during described step 2..
5. according to the method for claim 3 or 4 described a kind of cleaning silicon chips, it is characterized in that the time of cleaning silicon chip was 4～8 minutes during described step 2..
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| CN 201010121960 CN101942365A (en) | 2010-03-10 | 2010-03-10 | Silicon wafer cleaning solution and method for cleaning silicon wafers using same |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102806217A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Method for washing silicon wafer by organic solvent |
| CN103013711A (en) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | Cleaning solution and cleaning process for removing metal ion contamination of crystalline silicon wafer |
| CN103343061A (en) * | 2013-07-18 | 2013-10-09 | 镇江荣德新能源科技有限公司 | Cleaning agent and cleaning method for diamond-wire cutting machine |
| CN103426972A (en) * | 2013-08-28 | 2013-12-04 | 中电投西安太阳能电力有限公司 | Cleaning method for texture surface making of silicon chip |
| CN105499228A (en) * | 2015-11-25 | 2016-04-20 | 中锗科技有限公司 | Cleaning method for wafer cassettes for solar germanium sheet packaging |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503064A (en) * | 2002-11-19 | 2004-06-09 | 东进半导体化学株式会社 | Photoresist developer compositions |
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2010
- 2010-03-10 CN CN 201010121960 patent/CN101942365A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503064A (en) * | 2002-11-19 | 2004-06-09 | 东进半导体化学株式会社 | Photoresist developer compositions |
Non-Patent Citations (2)
| Title |
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| 《河北工业大学学报》 20021231 刘玉岭 微电子工艺中的清洗技术现况与展望 , 2 * |
| 《硅谷》 20081031 江海兵 硅片清洗技术进展 , 2 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102806217A (en) * | 2012-08-21 | 2012-12-05 | 安阳市凤凰光伏科技有限公司 | Method for washing silicon wafer by organic solvent |
| CN103013711A (en) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | Cleaning solution and cleaning process for removing metal ion contamination of crystalline silicon wafer |
| CN103343061A (en) * | 2013-07-18 | 2013-10-09 | 镇江荣德新能源科技有限公司 | Cleaning agent and cleaning method for diamond-wire cutting machine |
| CN103426972A (en) * | 2013-08-28 | 2013-12-04 | 中电投西安太阳能电力有限公司 | Cleaning method for texture surface making of silicon chip |
| CN105499228A (en) * | 2015-11-25 | 2016-04-20 | 中锗科技有限公司 | Cleaning method for wafer cassettes for solar germanium sheet packaging |
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