CN103614249A - Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof - Google Patents
Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof Download PDFInfo
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- CN103614249A CN103614249A CN201310635957.9A CN201310635957A CN103614249A CN 103614249 A CN103614249 A CN 103614249A CN 201310635957 A CN201310635957 A CN 201310635957A CN 103614249 A CN103614249 A CN 103614249A
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Abstract
The invention relates to an alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers. The alkaline cleaning additive comprises the following components in percentage by weight: 0.1 to 0.5 percent of span-80, 0.6 to 2.5 percent of tween-40, 0.3 to 1.5 percent of dodecyl polyglycol ether and the balance of water. The invention also provides a cleaning liquid for alkaline cleaning of the polycrystalline silicon wafers. The cleaning liquid comprises an alkaline solution and the alkaline cleaning additive used after acid texturing of the polycrystalline silicon wafers, wherein the mass ratio of the alkaline cleaning additive for the polycrystalline silicon wafers to the alkaline solution is (0.2-2):100; the alkaline solution is the alkaline solution of inorganic alkali or organic alkali. The cleaning liquid can be used for cleaning the residual organic matters on the surfaces of the silicon wafers in a texturing process, so that the surfaces of the silicon wafers are hydrophobic and blow-drying of the silicon wafers is facilitated; porous silicon on the surfaces of the silicon wafers can be removed in an alkaline cleaning process, so that the hidden danger that a dispersing process is unstable due to the porous silicon is eliminated and the uniformity of the subsequent silicon nitride coating film is promoted.
Description
Technical field
The present invention relates to a kind ofly for alkali cleaning additive and using method after polysilicon chip acid making herbs into wool, belong to polysilicon solar cell technical field.
Background technology
In photovoltaic industry evolution, polycrystalline silicon solar cell is more and more subject to people's attention, reason is that polycrystalline battery is in the cheap price of maintenance, its efficiency has obtained significant lifting, its unit consumption of energy ratio and cost performance are all obviously better than single crystal battery, therefore, the market share of current polycrystalline battery is considerably beyond single crystal battery.
Polycrystalline battery generally adopts the mixing acid of nitric acid and hydrofluoric acid to carry out making herbs into wool, and after general making herbs into wool, silicon chip reflectivity, generally higher than 22%, even reaches 24%.The reflectivity that reduces silicon chip is to improve one of the most feasible method of polycrystalline battery efficiency.Adopt polycrystalline making herbs into wool additive to be optimized making herbs into wool, not only reflectivity can be reduced to below 18%, promote more than battery short circuit electric current reaches 50mA, and can significantly improve the uniformity coefficient of matte, for optimization and the improved efficiency of subsequent technique provides condition.But due to the use of polycrystalline additive, often make silicon chip surface because of the organic residual hydrophily that presents, cause silicon wafer blow-drying difficulty, also easily introduce metallic pollution, reduce minority carrier life time, cause the shunting resistance of battery and open circuit voltage to decline.Like this, net result is in the situation that reflectivity reduction, short-circuit current promote, and but because open circuit voltage decreases, causes the efficiency of conversion improved efficiency of cell piece limited, declines even on the contrary.Meanwhile, due to the porous silicon structure of the matte inside of using making herbs into wool additive to form, if without suitable processing, the techniques such as will remarkably influenced follow-up diffusion, plated film, cause disqualification rate to improve, and efficiency also can decline.Generally speaking, the use of polycrystalline additive, the reduction of reflectivity and this two aspect of the inhomogeneity lifting of matte are had to positive effect, but also can cause silicon chip surface to pollute and inner these two negative interactions that produce porous silicon of matte, how positive effect is brought into play, and negative impact is eliminated, will become the key of polycrystalline additive lifting polycrystalline battery.
In the present invention, additive therefor is nonionic surface active agent, and composite rear being well dissolved in water all has good application in machinery, coating and chemical industry according to a certain ratio, as: foods and cosmetics is made emulsifying agent in producing; In paint, coatings industry, make dispersion agent; Used as stabilizers in titanium white production; In pesticide producing, make sterilant, wetting agent, emulsifying agent; In petroleum product, make solubility promoter; For weaving and the lubricant of leather and softening agent etc.
summary of the invention
For the problems referred to above, the invention provides a kind ofly for polysilicon chip alkali cleaning additive and using method thereof, can solve the cleaning problem of silicon chip surface, make polycrystalline making herbs into wool additive when reducing silicon chip reflectivity, can promote cell piece efficiency of conversion.
Adding under the leather producing process of polycrystalline making herbs into wool additive, there is tiny porous silicon structure generation the inside, worm hole of silicon wafer suede, and porous silicon surface is due to organic adsorption, the effect that conventional alkaline solution is cleaned reduces greatly, cannot remove organic residually, also be difficult to porous silicon to clean up.After alkali cleans, silicon chip surface still has organic substance residues, makes the silicon wafer blow-drying after making herbs into wool more difficult, easily introduces metallic pollution; Porous silicon is all influential to process procedures such as diffusion and silicon nitride plated films simultaneously, causes the reduction of shunting resistance and open circuit voltage, affects improved efficiency, and the present invention can solve this problem well.
By the use of alkali cleaning additive of the present invention, it is hydrophobic changing silicon chip surface state, thus the hydrophily of avoiding and the Organic pollutants introduced; And this additive can help alkali cleaning solution to reach better effect to the cleaning of porous silicon, reach cleaner silicon chip surface state, thereby guaranteed the lifting of efficiency of conversion.
For achieving the above object, the invention provides a kind ofly for the alkali cleaning additive after polysilicon chip acid making herbs into wool, its component comprises: the water of span-80, Tween-40, Brij-35 and surplus.
Preferably, in described alkali cleaning additive, the quality percentage composition of each component is: span-80 is 0.1%～0.5%, and Tween-40 is 0.6%～2.5%, and Brij-35 is 0.3%～1.5%, and surplus is water.
Preferably, described water is deionized water.
The present invention also provides a kind of scavenging solution cleaning for polysilicon chip alkali, and it contains alkaline solution and above-mentioned alkali cleaning additive, and the mass ratio of described alkali cleaning additive and alkaline solution is 0.2～2:100, and described alkaline solution is the aqueous solution of mineral alkali or organic bases.
Preferably, described alkaline solution is 3～10wt% sodium hydroxide or potassium hydroxide aqueous solution.
The present invention also provides a kind of alkali purging method of polysilicon chip, utilizes above-mentioned alkaline cleaner to carry out surperficial alkali cleaning to polysilicon chip.
Preferably, the alkali cleaning temperature that described surperficial alkali cleans is 25～45 ℃, and alkali scavenging period is 10～30s.
The concrete steps of the alkali purging method of above-mentioned polysilicon chip comprise:
1) configuration alkali cleaning additive: the span-80 that is 0.1%～0.5% by mass percent, 0.6%～2.5% Tween-40,0.3%～1.5% Brij-35 join in the water of surplus, mix proportionaling alkali-forming cleaning additive;
2) configuration alkaline cleaner: the alkali cleaning additive that step 1) is made is added in alkaline solution, mixes proportionaling alkali-forming scavenging solution; The mass ratio of described alkali cleaning additive and alkaline solution is 0.2～2:100; Described alkaline solution is the aqueous solution of mineral alkali or organic bases, is preferably 3～10% sodium hydroxide or potassium hydroxide aqueous solution;
3) polysilicon chip after sour making herbs into wool is immersed to step 2) carry out surperficial alkali cleaning in the alkaline cleaner that makes, alkali cleaning temperature is 25～45 ℃, alkali scavenging period is 10～30s.
Three kinds of active substances of the present invention all contain the long molecule segment that carbon number amount is greater than 10, for water, have strong repulsive interaction, can be used as the oleophylic segment (hydrophobic segment) of tensio-active agent.These three kinds of effective constituents are added in alkaline solution, can reduce surface tension, are easy to alkali and clean the porous silicon generating because adding Wool-making agent, simultaneously because of the existence of hydrophobic segment, can make silicon chip surface hydrophilicity reduce.Hydrophobic based on making silicon chip surface, alkali cleans object more thoroughly, using above three kinds of materials are composite, as effective constituent, is added in alkaline solution, can reduce on the one hand the surface tension of alkaline solution, improves the wettability of silicon chip surface, alkali is cleaned and be easier to carry out; Because long molecular carbon segment contained in three kinds of materials has strong repulsive interaction for glassware for drinking water, make hydrophobic object be easy to realize on the other hand.
Advantage of the present invention and beneficial effect are: the invention provides a kind of for alkali cleaning additive and using method thereof after polysilicon chip acid making herbs into wool, this alkali cleaning additive is applied to the alkali cleaning after polysilicon chip acid making herbs into wool, can change silicon chip surface state and make it to present hydrophobic shape, effectively wash the Organic pollutants of introducing because of hydrophilic, reduced the impact on subsequent technique because of surface tissue and organic residue, the lifting of guaranteed efficiency.In addition, alkali cleaning additive nontoxicity of the present invention, non-corrosiveness, nonirritant, without burning and explosion hazard, can also avoid environmental pollution; And manufacture and the operation of alkali cleaning additive are simple, equipment is cheap, reproducible.
Embodiment
Below in conjunction with specific embodiment, the specific embodiment of the present invention is further described.Following examples are only for technical scheme of the present invention is more clearly described, and can not limit the scope of the invention with this.
embodiment 1:
For alkali cleaning additive and the using method after polysilicon chip acid making herbs into wool, take following processing step:
1) configuration alkali cleaning additive: by 0.1g span-80,0.6g Tween-40,0.3g Brij-35, add in deionized water, obtain 100g alkali cleaning additive solution.
2) configuration alkaline cleaner: the NaOH of 1.5kg is dissolved in deionized water, obtains 50kg alkaline solution; The 100g alkali cleaning additive that step 1) is made is dissolved in alkaline solution, obtains alkaline cleaner.
3) in alkaline cleaner alkali cleaning: the polysilicon chip after sour making herbs into wool is immersed to step 2) making, carry out surperficial alkali cleaning, alkali cleaning temperature is 25 ℃, and alkali scavenging period is 25s.
After cleaning by routine cleaning with after being added with alkali cleaning additive of the present invention, carry out efficiency ratio.Result is as shown in table 1.
Table 1
embodiment 2:
For alkali cleaning additive and the using method after polysilicon chip acid making herbs into wool, take following processing step:
1) configuration alkali cleaning additive: by 0.5g span-80,2.5g Tween-40,1.5g Brij-35, add in deionized water, obtain 100g alkali cleaning additive solution.
2) configuration alkaline cleaner: the NaOH of 0.5kg is dissolved in deionized water, obtains 5kg alkaline solution; The 100g alkali cleaning additive that step 1) is made is dissolved in alkaline solution, obtains alkaline cleaner.
3) in alkaline cleaner alkali cleaning: the polysilicon chip after sour making herbs into wool is immersed to step 2) making, carry out surperficial alkali cleaning, alkali cleaning temperature is 45 ℃, and alkali scavenging period is 10s.
After cleaning by routine cleaning with after being added with alkali cleaning additive of the present invention, carry out effect comparison.Result is as shown in table 2.
Table 2
embodiment 3
For alkali cleaning additive and the using method after polysilicon chip acid making herbs into wool, take following processing step:
1) configuration alkali cleaning additive: by 0.3g span-80,1.5g Tween-40,1g Brij-35, add in deionized water, obtain 100g alkali cleaning additive solution.
2) configuration alkaline cleaner: the NaOH of 1kg is dissolved in deionized water, obtains 20kg alkaline solution; The 100g alkali cleaning additive that step 1) is made is dissolved in alkaline solution, obtains alkaline cleaner.
3) in alkaline cleaner alkali cleaning: the polysilicon chip after sour making herbs into wool is immersed to step 2) making, carry out surperficial alkali cleaning, alkali cleaning temperature is 30 ℃, and alkali scavenging period is 18s.
After cleaning by routine cleaning with after being added with alkali cleaning additive of the present invention, carry out effect comparison.Result is as shown in table 3.
Table 3
From above-described embodiment, can find out, after having added alkali cleaning additive, the in the situation that of Different Alkali concentration and temperature, than conventional alkali cleaning under equal conditions, can improve open circuit voltage, improve photoelectric transformation efficiency.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (8)
1. for the alkali cleaning additive after polysilicon chip acid making herbs into wool, it is characterized in that, its component comprises: the water of span-80, Tween-40, Brij-35 and surplus.
2. according to claim 1 for the alkali cleaning additive after polysilicon chip acid making herbs into wool, it is characterized in that, in described alkali cleaning additive, the quality percentage composition of each component is: span-80 is 0.1%～0.5%, Tween-40 is 0.6%～2.5%, Brij-35 is 0.3%～1.5%, and surplus is water.
3. according to claim 1 and 2ly for the alkali cleaning additive after polysilicon chip acid making herbs into wool, it is characterized in that, described water is deionized water.
4. for the alkaline cleaner after polysilicon chip acid making herbs into wool, it is characterized in that: its contain any one in alkaline solution and claim 1-3 for the alkali cleaning additive after polysilicon chip acid making herbs into wool, the mass ratio of described alkali cleaning additive and alkaline solution is 0.2～2:100, and described alkaline solution is the aqueous solution of mineral alkali or organic bases.
5. the alkaline cleaner for polysilicon chip according to claim 4, is characterized in that: the sodium hydroxide that described alkaline solution is 3～10wt% or potassium hydroxide aqueous solution.
6. according to the alkali purging method of the polysilicon chip described in claim 4 or 5, it is characterized in that: utilize described scavenging solution to carry out surface cleaning to polysilicon chip.
7. the alkali purging method of polysilicon chip according to claim 6, is characterized in that: the alkali cleaning temperature that described surperficial alkali cleans is 25～45 ℃, and scavenging period is 10～30s.
8. the alkali purging method of polysilicon chip according to claim 7, is characterized in that: its concrete steps comprise:
1) configuration alkali cleaning additive: the span-80 that is 0.1%～0.5% by mass percent, 0.6%～2.5% Tween-40,0.3%～1.5% Brij-35 join in the water of surplus, mix proportionaling alkali-forming cleaning additive;
2) configuration alkaline cleaner: the alkali cleaning additive that step 1) is made is added in alkaline solution, mixes proportionaling alkali-forming scavenging solution; The mass ratio of described alkali cleaning additive and alkaline solution is 0.2～2:100; Described alkaline solution is the aqueous solution of mineral alkali or organic bases;
3) polysilicon chip after sour making herbs into wool is immersed to step 2) carry out surperficial alkali cleaning in the alkaline cleaner that makes, alkali cleaning temperature is 25～45 ℃, alkali scavenging period is 10～30s.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104120040B (en) * | 2014-08-08 | 2017-08-01 | 常州时创能源科技有限公司 | The cleaning solution additive of polysilicon chain-type texture-etching equipment and its application |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN112143590A (en) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning additive, silicon wafer cleaning liquid and application thereof |
| CN114806752A (en) * | 2022-05-25 | 2022-07-29 | 武汉宜田科技发展有限公司 | High-free-alkalinity single-component cleaning agent for monocrystalline large-size silicon wafer |
| WO2022262340A1 (en) * | 2021-06-18 | 2022-12-22 | 常州时创能源股份有限公司 | Alkali corrosion adjuvant for cleaning winding-plated polysilicon and application thereof |
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2013
- 2013-12-03 CN CN201310635957.9A patent/CN103614249A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104120040B (en) * | 2014-08-08 | 2017-08-01 | 常州时创能源科技有限公司 | The cleaning solution additive of polysilicon chain-type texture-etching equipment and its application |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN112143590A (en) * | 2020-09-29 | 2020-12-29 | 常州时创能源股份有限公司 | Silicon wafer cleaning additive, silicon wafer cleaning liquid and application thereof |
| WO2022262340A1 (en) * | 2021-06-18 | 2022-12-22 | 常州时创能源股份有限公司 | Alkali corrosion adjuvant for cleaning winding-plated polysilicon and application thereof |
| CN114806752A (en) * | 2022-05-25 | 2022-07-29 | 武汉宜田科技发展有限公司 | High-free-alkalinity single-component cleaning agent for monocrystalline large-size silicon wafer |
| CN114806752B (en) * | 2022-05-25 | 2023-09-01 | 武汉宜田科技发展有限公司 | Single-component cleaning agent with high free alkalinity for monocrystalline large-size silicon wafer |
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Application publication date: 20140305 |