WO2023216702A1 - Additive for cleaning silicon wafer, cleaning solution, and cleaning method after texturing of silicon wafer - Google Patents

Additive for cleaning silicon wafer, cleaning solution, and cleaning method after texturing of silicon wafer Download PDF

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WO2023216702A1
WO2023216702A1 PCT/CN2023/080666 CN2023080666W WO2023216702A1 WO 2023216702 A1 WO2023216702 A1 WO 2023216702A1 CN 2023080666 W CN2023080666 W CN 2023080666W WO 2023216702 A1 WO2023216702 A1 WO 2023216702A1
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cleaning
silicon wafer
sodium
additive
alkali
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PCT/CN2023/080666
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French (fr)
Chinese (zh)
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徐海舰
杨勇
章圆圆
陈培良
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常州时创能源股份有限公司
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Publication of WO2023216702A1 publication Critical patent/WO2023216702A1/en

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/08—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2079—Monocarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3942—Inorganic per-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C11D2111/22—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of silicon wafer cleaning, and specifically relates to an additive for cleaning silicon wafers after texturing, a cleaning liquid, and a cleaning method after texturing silicon wafers.
  • Texturing additives need to be used in the texturing process. If the texturing additives remain after the texturing process is completed, it will affect the efficiency of the cells. and yield, so it is necessary to add a cleaning process after texturing.
  • a mixture of hydrogen peroxide and alkali is generally used to remove the texturing liquid and dirt.
  • the hydrogen peroxide provides oxidation to decompose the organic matter adsorbed on the surface of the silicon wafer, and the alkali can enhance the oxidation property of the hydrogen peroxide.
  • alkali and hydrogen peroxide need to be continuously added to ensure the cleaning effect. Therefore, a large amount of hydrogen peroxide and alkali are needed for cleaning operations, which has the following disadvantages: (1) The production cost of battery cells is high; (2) Alkali and hydrogen peroxide are very harmful to the natural environment. In the wastewater treatment process Special treatment is required. Improper treatment can easily cause environmental problems and harm natural water bodies and soil; (3) The post-cleaning effect of alkali and hydrogen peroxide is not ideal, which restricts the efficiency improvement after silicon wafers are made into batteries.
  • the purpose of the present invention is to provide an additive for cleaning silicon wafers, a cleaning liquid and a method for cleaning silicon wafers after texturing, which can reduce the consumption of alkali and hydrogen peroxide and improve the efficiency of single crystal cells in view of the shortcomings of the existing technology.
  • the technical solution to achieve the object of the present invention is: an additive for silicon wafer cleaning, the mass percentage of each component is: 3%-5% water softener, 3%-6% oxidant, 0.01%-0.05% low-foaming alkali-resistant penetrant, 1%-3% buffer, and the remainder is water; wherein, the oxidizing agent is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate, and sodium perborate. Group, the low-foaming alkali-resistant penetrating agent is a sulfonate surfactant.
  • the oxidizing agent includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2%-3% of the mass percentage of the additive, and the sodium chlorite accounts for 1% of the mass percentage of the additive. -3%.
  • the combined oxidant of sodium hypochlorite and sodium chlorite can improve cleaning efficiency.
  • the water softening agent is selected from the group consisting of sodium stearate and disodium edetate.
  • the buffering agent is selected from the group consisting of sodium sulfate, sodium silicate, and sodium acetate.
  • This application also provides a silicon wafer cleaning solution, including a mixed solution of alkali and hydrogen peroxide and the additive for silicon wafer cleaning as mentioned above, wherein the mass ratio of the mixed solution of alkali and hydrogen peroxide to the additive for silicon wafer cleaning is For 100: 0.2-0.5.
  • the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and sodium hydroxide or potassium hydroxide with a mass percentage of 0.06%-0.1%.
  • This application also provides a cleaning method for silicon wafers after texturing, which includes the following steps:
  • step S2 Add the silicon wafer cleaning additive prepared in step S1 to the mixed solution of alkali and hydrogen peroxide, mix evenly to form a silicon wafer cleaning solution; wherein, the mixture of the silicon wafer cleaning additive and the alkali and hydrogen peroxide
  • the mass ratio of the solution is 0.2-0.5:100; the alkali in the mixed solution of alkali and hydrogen peroxide is sodium hydroxide or potassium hydroxide.
  • step S3 Put the silicon wafer into the silicon wafer cleaning solution configured in step S2, control the cleaning temperature to 60-70°C, and the cleaning time to 150s-200s; then, soak in water for 180s-200s to complete cleaning.
  • the oxidizing agent includes sodium hypochlorite and sodium chlorite
  • the sodium hypochlorite accounts for 2%-3% of the mass of the additive
  • the sodium chlorite accounts for 2%-3% of the mass of the additive.
  • the mass percentage is 1%-3%.
  • the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and alkali with a mass percentage of 0.06%-0.1%.
  • step S3 the cleaning temperature is 65-70°C, and the cleaning time is 180s-200s.
  • the invention provides an additive for silicon wafer cleaning, a cleaning liquid and a method for cleaning the silicon wafer after texturing.
  • the additive of the invention to the cleaning liquid, the purpose of reducing the amount of alkali and hydrogen peroxide is achieved. In actual production, it can reduce the consumption of both by 80%, significantly reduce costs, and clean more thoroughly, which can improve the efficiency of monocrystalline cells by 0.01%-0.05%. While reducing production costs, it also reduces the cost of sewage treatment and avoids pollution of natural water bodies and soil.
  • the water softener in the present invention can reduce the hardness of water, help control the generation of foam during the cleaning process, and promote the cleaning effect.
  • the oxidant provides oxidizing properties to the silicon wafer cleaning additives, which can oxidatively decompose the grease on the silicon wafer surface and help peel off organic dirt components on the silicon wafer surface.
  • the buffering agent provides a buffering effect for the alkalinity of the additive, which can enhance the cleaning effect. At the same time, the buffering agent also stabilizes the foam.
  • the low-foam alkali-resistant penetrant can have good wettability and permeability under alkaline conditions, and has less foam during the cleaning process and no adsorption on the surface of the silicon wafer.
  • the silicon wafer cleaning additive itself has zero adsorption on the surface of the silicon wafer, making it possible to improve the efficiency of monocrystalline cells.
  • the overall additive is alkaline, but the dosage is reduced by about 80% compared with traditional alkali plus hydrogen peroxide cleaning, and the cost of subsequent sewage treatment is greatly reduced.
  • An additive for silicon wafer cleaning the mass percentage of each component is: 3% water softener, 4% oxidant, 0.05% low-foaming alkali-resistant penetrant, 1% buffer, the balance is water .
  • the water softener is sodium stearate
  • the oxidizing agent includes sodium hypochlorite and sodium chlorite.
  • the mass percentage of sodium hypochlorite in the additive is 3%
  • the mass percentage of sodium chlorite in the additive is 1%
  • the low-foam alkali-resistant penetrant is a sulfonate surfactant
  • the buffering agent is sodium sulfate.
  • An additive for silicon wafer cleaning the mass percentage of each component is: 4% water softener, 5% oxidant, 0.03% low-foam alkali-resistant penetrant, 2% buffer, the balance is water .
  • the water softener is sodium stearate
  • the oxidizing agent includes sodium hypochlorite and sodium chlorite
  • the sodium hypochlorite accounts for 2% of the mass percentage of the additive
  • the sodium chlorite accounts for the mass percentage of the additive. It is 3%
  • the low-foaming alkali-resistant penetrant is a sulfonate surfactant
  • the buffering agent is sodium sulfate.
  • An additive for silicon wafer cleaning the mass percentage of each component is: 5% water softener, 3% oxidant, 0.01% low-foam alkali-resistant penetrant, 3% buffer, the balance is water .
  • the water softener is disodium ethylenediaminetetraacetate
  • the oxidant includes sodium hypochlorite and sodium perchlorate
  • the sodium hypochlorite accounts for 2% of the mass of the additive
  • the sodium chlorite accounts for 2% of the mass of the additive.
  • the mass percentage is 1%
  • the low-foaming alkali-resistant penetrating agent is a sulfonate surfactant
  • the buffering agent is sodium silicate.
  • An additive for silicon wafer cleaning the mass percentage of each component is: 3.5% water softener, 6% oxidant, 0.02% low-foam alkali-resistant penetrant, 3% buffer, the balance is water .
  • the water softener is a mixture of sodium stearate and disodium ethylenediaminetetraacetate
  • the oxidizing agent includes sodium chlorite and sodium perborate
  • the mass percentage of sodium chlorite in the additive is 3 %
  • the mass percentage of sodium perborate in the additive is 3%
  • the low-foaming alkali-resistant penetrant is a sulfonate surfactant
  • the buffer is sodium acetate.
  • a silicon wafer cleaning solution includes a mixed solution of alkali and hydrogen peroxide and the silicon wafer cleaning additive described in Embodiment 1.
  • the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.2.
  • the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% (such as 0.9%, 1%, 1.3%, 1.5%) and a mass percentage of 0.06%-0.1% (such as 0.06%, 0.07 %, 0.09%, 0.1%) alkali, where the alkali is sodium hydroxide.
  • Example 5 What is different from Example 5 is that the additive is the silicon wafer cleaning additive of Example 2, the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.3, and the alkali is hydrogen Potassium oxide.
  • the additive is the silicon wafer cleaning additive of Example 3
  • the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.5
  • the alkali is hydrogen Potassium oxide.
  • the additive is the silicon wafer cleaning additive of Example 4, the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.5, and the alkali is hydrogen Sodium oxide.
  • a method for cleaning silicon wafers after texturing including the following steps:
  • step S2 Add the silicon wafer cleaning additive prepared in step S1 to the mixed solution of alkali and hydrogen peroxide, mix evenly to form a silicon wafer cleaning solution; wherein, the mixture of the silicon wafer cleaning additive and the alkali and hydrogen peroxide
  • the mass ratio of the solution is 0.2-0.5:100; the alkali in the mixed solution of alkali and hydrogen peroxide is sodium hydroxide or potassium hydroxide.
  • step S3 Put the silicon wafer into the silicon wafer cleaning solution configured in step S2, control the cleaning temperature to 60-70°C, and the cleaning time to 150s-200s; then, soak it in water for 180s-200s to complete the cleaning.
  • the oxidizing agent includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2%-3% of the mass percentage of the additive, and the sodium chlorite accounts for 1% of the mass percentage of the additive. -3%.
  • step S2 the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and alkali with a mass percentage of 0.06%-0.1%.
  • the cleaning temperature is 65-70°C, and the cleaning time is 180s-200s.
  • the silicon wafer after texturing is cleaned using a mixed solution of alkali and hydrogen peroxide.
  • the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and an alkali with a mass percentage of 0.06%-0.1%.
  • the base is sodium hydroxide or potassium hydroxide.
  • the performance test results show that after using the additives of Examples 1-4 of the present invention in the post-texturing cleaning process, compared to the comparative example, the cleaning effect does not decrease, and even the battery efficiency generally increases by 0.01%-0.05%. At the same time, it can reduce the consumption of alkali and hydrogen peroxide by 80%, significantly reducing costs.

Abstract

An additive for cleaning a silicon wafer after texturing, a cleaning solution, and a cleaning method after texturing of a silicon wafer. The additive for cleaning a silicon wafer comprises the following components, in percentages by mass: 3-5% of a water softener, 3-6% of an oxidizing agent, 0.01-0.05% of a low-foam alkali-resistant penetrant, 1-3% of a buffering agent and the balance of water, wherein the oxidizing agent is selected from a group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low-foam alkali-resistant penetrant is a sulfonate surfactant. By adding the additive to a cleaning solution, in actual production, the cost can be greatly reduced, the cleaning is more thorough, and the efficiency of a single crystalline battery can be improved by 0.01-0.05%. While the production cost is reduced, the cost for sewage treatment is also reduced, and pollution to natural water and soil is avoided.

Description

一种硅片清洗用添加剂、清洗液及硅片制绒后清洗方法A kind of silicon wafer cleaning additive, cleaning liquid and silicon wafer cleaning method after texturing 技术领域Technical field
本发明涉及硅片清洗技术领域，具体涉及一种用于硅片制绒后清洗的添加剂、清洗液以及硅片制绒后清洗方法。The invention relates to the technical field of silicon wafer cleaning, and specifically relates to an additive for cleaning silicon wafers after texturing, a cleaning liquid, and a cleaning method after texturing silicon wafers.
背景技术Background technique
在太阳能单晶电池的生产过程中，制绒是其中一道重要的工艺，在制绒工艺中需要使用制绒添加剂，若制绒添加剂在制绒工序完成后有残留，则会影响电池片的效率和良率，因此需要再制绒后再添加一步清洗工序。In the production process of solar monocrystalline cells, texturing is one of the important processes. Texturing additives need to be used in the texturing process. If the texturing additives remain after the texturing process is completed, it will affect the efficiency of the cells. and yield, so it is necessary to add a cleaning process after texturing.
在目前的制绒后清洗工序中，一般采用双氧水和碱的混合液来实现制绒液和脏污的去除，其中双氧水提供氧化作用分解硅片表面吸附的有机物，碱可以增强双氧水的氧化性，在制绒后清洗过程中需要不断补充碱和双氧水，以保证清洗的效果。因此需要用到大量的双氧水和碱进行清洗操作，具有以下缺点：（1）使得电池片生产成本较高；（2）碱和双氧水对自然环境都具备较大的危害性，在废水处理过程中需要特别处理，一旦有处理不当，极易产生环境问题，危害自然水体和土壤；（3）碱和双氧水的后清洗效果并不理想，制约了硅片做成电池后的效率提升。In the current cleaning process after texturing, a mixture of hydrogen peroxide and alkali is generally used to remove the texturing liquid and dirt. The hydrogen peroxide provides oxidation to decompose the organic matter adsorbed on the surface of the silicon wafer, and the alkali can enhance the oxidation property of the hydrogen peroxide. During the cleaning process after texturing, alkali and hydrogen peroxide need to be continuously added to ensure the cleaning effect. Therefore, a large amount of hydrogen peroxide and alkali are needed for cleaning operations, which has the following disadvantages: (1) The production cost of battery cells is high; (2) Alkali and hydrogen peroxide are very harmful to the natural environment. In the wastewater treatment process Special treatment is required. Improper treatment can easily cause environmental problems and harm natural water bodies and soil; (3) The post-cleaning effect of alkali and hydrogen peroxide is not ideal, which restricts the efficiency improvement after silicon wafers are made into batteries.
发明内容Contents of the invention
本发明的目的是针对现有技术的缺陷，提供一种硅片清洗用添加剂、清洗液以及硅片制绒后清洗方法，可以减少碱和双氧水的用量，并提高单晶电池效率。The purpose of the present invention is to provide an additive for cleaning silicon wafers, a cleaning liquid and a method for cleaning silicon wafers after texturing, which can reduce the consumption of alkali and hydrogen peroxide and improve the efficiency of single crystal cells in view of the shortcomings of the existing technology.
实现本发明目的的技术方案是：一种硅片清洗用添加剂，其各组分的质量百分含量为：3%-5%的软水剂、3%-6%的氧化剂、0.01%-0.05%的低泡耐碱渗透剂、1%-3%的缓冲剂，余量为水；其中，所述氧化剂选自于由次氯酸钠、亚氯酸钠、高氯酸钠以及过硼酸钠所组成的群组，所述低泡耐碱渗透剂为磺酸盐类表面活性剂。The technical solution to achieve the object of the present invention is: an additive for silicon wafer cleaning, the mass percentage of each component is: 3%-5% water softener, 3%-6% oxidant, 0.01%-0.05% low-foaming alkali-resistant penetrant, 1%-3% buffer, and the remainder is water; wherein, the oxidizing agent is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate, and sodium perborate. Group, the low-foaming alkali-resistant penetrating agent is a sulfonate surfactant.
在一些实施例中，所述氧化剂包括次氯酸钠和亚氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%-3%，所述亚氯酸钠占所述添加剂的质量百分比为1%-3%。次氯酸钠和亚氯酸钠复配的氧化剂可提高清洗效率。In some embodiments, the oxidizing agent includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2%-3% of the mass percentage of the additive, and the sodium chlorite accounts for 1% of the mass percentage of the additive. -3%. The combined oxidant of sodium hypochlorite and sodium chlorite can improve cleaning efficiency.
在一些实施例中，所述软水剂选自于由硬脂酸钠和乙二胺四乙酸二钠所组成的群组。In some embodiments, the water softening agent is selected from the group consisting of sodium stearate and disodium edetate.
在一些实施例中，所述缓冲剂选自于由硫酸钠、硅酸钠以及乙酸钠所组成的群组。In some embodiments, the buffering agent is selected from the group consisting of sodium sulfate, sodium silicate, and sodium acetate.
本申请还提供了一种硅片清洗液，包括碱和双氧水的混合溶液以及如上所述的硅片清洗用添加剂，其中所述碱和双氧水的混合溶液和所述硅片清洗用添加剂的质量比为100：0.2-0.5。This application also provides a silicon wafer cleaning solution, including a mixed solution of alkali and hydrogen peroxide and the additive for silicon wafer cleaning as mentioned above, wherein the mass ratio of the mixed solution of alkali and hydrogen peroxide to the additive for silicon wafer cleaning is For 100: 0.2-0.5.
在一些实施例中，所述碱和双氧水的混合溶液中，含有质量百分比为0.9%-1.5%的双氧水以及质量百分比为0.06%-0.1%的氢氧化钠或氢氧化钾。In some embodiments, the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and sodium hydroxide or potassium hydroxide with a mass percentage of 0.06%-0.1%.
本申请还提供了一种硅片制绒后清洗方法，包括以下步骤：This application also provides a cleaning method for silicon wafers after texturing, which includes the following steps:
S1、将质量百分比为3%-5%的软水剂、3%-6%的氧化剂、0.01%-0.05%的低泡耐碱渗透剂、1%-3%的缓冲剂加入到余量的水中；混合均匀配置成硅片清洗用添加剂；其中，所述氧化剂选自于由次氯酸钠、亚氯酸钠、高氯酸钠以及过硼酸钠所组成的群组，所述低泡耐碱渗透剂为磺酸盐类表面活性剂；S1. Add 3%-5% water softener, 3%-6% oxidant, 0.01%-0.05% low-foaming alkali-resistant penetrant, and 1%-3% buffer to the remaining water. ; Mix evenly and configure to form an additive for silicon wafer cleaning; wherein, the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low-foaming alkali-resistant penetrant is Sulfonate surfactants;
S2、将步骤S1中配制好的硅片清洗用添加剂加入到碱和双氧水的混合溶液中，混合均匀配置成硅片清洗液；其中，所述硅片清洗用添加剂与所述碱和双氧水的混合溶液的质量比为0.2-0.5:100；所述碱和双氧水的混合溶液中的碱采用氢氧化钠或氢氧化钾。S2. Add the silicon wafer cleaning additive prepared in step S1 to the mixed solution of alkali and hydrogen peroxide, mix evenly to form a silicon wafer cleaning solution; wherein, the mixture of the silicon wafer cleaning additive and the alkali and hydrogen peroxide The mass ratio of the solution is 0.2-0.5:100; the alkali in the mixed solution of alkali and hydrogen peroxide is sodium hydroxide or potassium hydroxide.
S3、将硅片放入到步骤S2配置好的所述硅片清洗液中，控制清洗温度为60-70℃，清洗时间为150s-200s；之后，在水中浸泡180s-200s，完成清洗。S3. Put the silicon wafer into the silicon wafer cleaning solution configured in step S2, control the cleaning temperature to 60-70°C, and the cleaning time to 150s-200s; then, soak in water for 180s-200s to complete cleaning.
在一些实施例中，所述步骤S1中，所述氧化剂包括次氯酸钠和亚氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%-3%，所述亚氯酸钠占所述添加剂的质量百分比为1%-3%。In some embodiments, in step S1, the oxidizing agent includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2%-3% of the mass of the additive, and the sodium chlorite accounts for 2%-3% of the mass of the additive. The mass percentage is 1%-3%.
在一些实施例中，所述步骤S2中，所述碱和双氧水的混合溶液中含有质量百分比为0.9%-1.5%的双氧水以及质量百分比为0.06%-0.1%的碱。In some embodiments, in step S2, the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and alkali with a mass percentage of 0.06%-0.1%.
在一些实施例中，所述步骤S3中，清洗温度为65-70℃，清洗时间为180s-200s。In some embodiments, in step S3, the cleaning temperature is 65-70°C, and the cleaning time is 180s-200s.
有益效果beneficial effects
本发明的有益效果在于：The beneficial effects of the present invention are:
本发明提供了一种硅片清洗用添加剂、清洗液以及硅片制绒后清洗方法，通过在清洗液中添加本发明的添加剂，达到减少碱和双氧水用量的目的。实际生产中，能够降低二者80%耗量，大幅度降低了成本，且清洁更彻底，能够提高单晶电池效率0.01%-0.05%。在降低生产成本的同时，也降低了污水处理的成本，避免了对自然水体、土壤的污染。  The invention provides an additive for silicon wafer cleaning, a cleaning liquid and a method for cleaning the silicon wafer after texturing. By adding the additive of the invention to the cleaning liquid, the purpose of reducing the amount of alkali and hydrogen peroxide is achieved. In actual production, it can reduce the consumption of both by 80%, significantly reduce costs, and clean more thoroughly, which can improve the efficiency of monocrystalline cells by 0.01%-0.05%. While reducing production costs, it also reduces the cost of sewage treatment and avoids pollution of natural water bodies and soil.​
本发明中的软水剂，可以降低水的硬度，帮助控制清洗过程中泡沫的产生，并对清洗效果有促进作用。氧化剂为硅片清洗用添加剂提供氧化性，可以对硅片表面油脂氧化分解，有助于剥离硅片表面的有机脏污成分。缓冲剂为添加剂的碱性提供缓冲作用，可以增强清洗效果，同时缓冲剂也具有稳定泡沫的作用。低泡耐碱渗透剂可以在碱性条件下拥有较好润湿性和渗透性，并且清洗过程中泡沫少，在硅片表面无吸附，这使得硅片在后清洗工序中不但制绒液等有机物可以完全去除，硅片清洗用添加剂本身在硅片表面也完全零吸附，为单晶电池片的效率提升提供了可能。此外，添加剂整体呈碱性，但用量较传统碱加双氧水的清洗降低了约80%，后续的污水处理成本大大下降。The water softener in the present invention can reduce the hardness of water, help control the generation of foam during the cleaning process, and promote the cleaning effect. The oxidant provides oxidizing properties to the silicon wafer cleaning additives, which can oxidatively decompose the grease on the silicon wafer surface and help peel off organic dirt components on the silicon wafer surface. The buffering agent provides a buffering effect for the alkalinity of the additive, which can enhance the cleaning effect. At the same time, the buffering agent also stabilizes the foam. The low-foam alkali-resistant penetrant can have good wettability and permeability under alkaline conditions, and has less foam during the cleaning process and no adsorption on the surface of the silicon wafer. This makes the silicon wafer not only texturing liquid, etc. in the post-cleaning process Organic matter can be completely removed, and the silicon wafer cleaning additive itself has zero adsorption on the surface of the silicon wafer, making it possible to improve the efficiency of monocrystalline cells. In addition, the overall additive is alkaline, but the dosage is reduced by about 80% compared with traditional alkali plus hydrogen peroxide cleaning, and the cost of subsequent sewage treatment is greatly reduced.
具体实施方式Detailed ways
下面对本发明的较佳实施例进行详细阐述，以使本发明的优点和特征能更易被本领域人员理解，从而对本发明的保护范围做出更为清楚明确的界定。The preferred embodiments of the present invention are described in detail below, so that the advantages and features of the present invention can be more easily understood by those in the art, and the protection scope of the present invention can be more clearly defined.
实施例1Example 1
一种硅片清洗用添加剂，其各组分的质量百分含量为：3%的软水剂、4%的氧化剂、0.05%的低泡耐碱渗透剂、1%的缓冲剂，余量为水。An additive for silicon wafer cleaning, the mass percentage of each component is: 3% water softener, 4% oxidant, 0.05% low-foaming alkali-resistant penetrant, 1% buffer, the balance is water .
其中，所述软水剂为硬脂酸钠，所述氧化剂包括次氯酸钠和亚氯酸钠。所述次氯酸钠占所述添加剂的质量百分比为3%，所述亚氯酸钠占所述添加剂的质量百分比为1%，所述低泡耐碱渗透剂为磺酸盐类表面活性剂，所述缓冲剂为硫酸钠。Wherein, the water softener is sodium stearate, and the oxidizing agent includes sodium hypochlorite and sodium chlorite. The mass percentage of sodium hypochlorite in the additive is 3%, the mass percentage of sodium chlorite in the additive is 1%, the low-foam alkali-resistant penetrant is a sulfonate surfactant, and The buffering agent is sodium sulfate.
实施例2Example 2
一种硅片清洗用添加剂，其各组分的质量百分含量为：4%的软水剂、5%的氧化剂、0.03%的低泡耐碱渗透剂、2%的缓冲剂，余量为水。An additive for silicon wafer cleaning, the mass percentage of each component is: 4% water softener, 5% oxidant, 0.03% low-foam alkali-resistant penetrant, 2% buffer, the balance is water .
其中，所述软水剂为硬脂酸钠，所述氧化剂包括次氯酸钠和亚氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%，所述亚氯酸钠占所述添加剂的质量百分比为3%，所述低泡耐碱渗透剂为磺酸盐类表面活性剂，所述缓冲剂为硫酸钠。Wherein, the water softener is sodium stearate, the oxidizing agent includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% of the mass percentage of the additive, and the sodium chlorite accounts for the mass percentage of the additive. It is 3%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffering agent is sodium sulfate.
实施例3Example 3
一种硅片清洗用添加剂，其各组分的质量百分含量为：5%的软水剂、3%的氧化剂、0.01%的低泡耐碱渗透剂、3%的缓冲剂，余量为水。An additive for silicon wafer cleaning, the mass percentage of each component is: 5% water softener, 3% oxidant, 0.01% low-foam alkali-resistant penetrant, 3% buffer, the balance is water .
其中，所述软水剂为乙二胺四乙酸二钠，所述氧化剂包括次氯酸钠和高氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%，所述亚氯酸钠占所述添加剂的质量百分比为1%，所述低泡耐碱渗透剂为磺酸盐类表面活性剂，所述缓冲剂为硅酸钠。Wherein, the water softener is disodium ethylenediaminetetraacetate, the oxidant includes sodium hypochlorite and sodium perchlorate, the sodium hypochlorite accounts for 2% of the mass of the additive, and the sodium chlorite accounts for 2% of the mass of the additive. The mass percentage is 1%, the low-foaming alkali-resistant penetrating agent is a sulfonate surfactant, and the buffering agent is sodium silicate.
实施例4Example 4
一种硅片清洗用添加剂，其各组分的质量百分含量为：3.5%的软水剂、6%的氧化剂、0.02%的低泡耐碱渗透剂、3%的缓冲剂，余量为水。An additive for silicon wafer cleaning, the mass percentage of each component is: 3.5% water softener, 6% oxidant, 0.02% low-foam alkali-resistant penetrant, 3% buffer, the balance is water .
其中，所述软水剂为硬脂酸钠和乙二胺四乙酸二钠的混合物，所述氧化剂包括亚氯酸钠和过硼酸钠，所述亚氯酸钠占所述添加剂的质量百分比为3%，所述过硼酸钠占所述添加剂的质量百分比为3%，所述低泡耐碱渗透剂为磺酸盐类表面活性剂，所述缓冲剂为乙酸钠。Wherein, the water softener is a mixture of sodium stearate and disodium ethylenediaminetetraacetate, the oxidizing agent includes sodium chlorite and sodium perborate, and the mass percentage of sodium chlorite in the additive is 3 %, the mass percentage of sodium perborate in the additive is 3%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium acetate.
实施例5Example 5
一种硅片清洗液，包括碱和双氧水的混合溶液以及实施例1所述的硅片清洗用添加剂。其中所述碱和双氧水的混合溶液和所述硅片清洗用添加剂的质量比为100：0.2。A silicon wafer cleaning solution includes a mixed solution of alkali and hydrogen peroxide and the silicon wafer cleaning additive described in Embodiment 1. The mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.2.
所述碱和双氧水的混合溶液中，含有质量百分比为0.9%-1.5%（比如0.9%、1%、1.3%、1.5%）的双氧水以及质量百分比为0.06%-0.1%（比如0.06%、0.07%、0.09%、0.1%）的碱，其中碱为氢氧化钠。The mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% (such as 0.9%, 1%, 1.3%, 1.5%) and a mass percentage of 0.06%-0.1% (such as 0.06%, 0.07 %, 0.09%, 0.1%) alkali, where the alkali is sodium hydroxide.
实施例6Example 6
与实施例5不同的是，所述的添加剂为实施例2的硅片清洗用添加剂，所述碱和双氧水的混合溶液和所述硅片清洗用添加剂的质量比为100：0.3，碱为氢氧化钾。What is different from Example 5 is that the additive is the silicon wafer cleaning additive of Example 2, the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.3, and the alkali is hydrogen Potassium oxide.
实施例7Example 7
与实施例5不同的是，所述的添加剂为实施例3的硅片清洗用添加剂，所述碱和双氧水的混合溶液和所述硅片清洗用添加剂的质量比为100：0.5，碱为氢氧化钾。Different from Example 5, the additive is the silicon wafer cleaning additive of Example 3, the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.5, and the alkali is hydrogen Potassium oxide.
实施例8Example 8
与实施例5不同的是，所述的添加剂为实施例4的硅片清洗用添加剂，所述碱和双氧水的混合溶液和所述硅片清洗用添加剂的质量比为100：0.5，碱为氢氧化钠。Different from Example 5, the additive is the silicon wafer cleaning additive of Example 4, the mass ratio of the mixed solution of alkali and hydrogen peroxide to the silicon wafer cleaning additive is 100:0.5, and the alkali is hydrogen Sodium oxide.
实施例9Example 9
一种硅片制绒后清洗方法，包括以下步骤：A method for cleaning silicon wafers after texturing, including the following steps:
S1、将质量百分比为3%-5%的软水剂、3%-6%的氧化剂、0.01%-0.05%的低泡耐碱渗透剂、1%-3%的缓冲剂加入到余量的水中；混合均匀配置成硅片清洗用添加剂；其中，所述氧化剂选自于由次氯酸钠、亚氯酸钠、高氯酸钠以及过硼酸钠所组成的群组，所述低泡耐碱渗透剂为磺酸盐类表面活性剂；S1. Add 3%-5% water softener, 3%-6% oxidant, 0.01%-0.05% low-foaming alkali-resistant penetrant, and 1%-3% buffer to the remaining water. ; Mix evenly and configure to form an additive for silicon wafer cleaning; wherein, the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low-foaming alkali-resistant penetrant is Sulfonate surfactants;
S2、将步骤S1中配制好的硅片清洗用添加剂加入到碱和双氧水的混合溶液中，混合均匀配置成硅片清洗液；其中，所述硅片清洗用添加剂与所述碱和双氧水的混合溶液的质量比为0.2-0.5:100；所述碱和双氧水的混合溶液中碱采用氢氧化钠或氢氧化钾。S2. Add the silicon wafer cleaning additive prepared in step S1 to the mixed solution of alkali and hydrogen peroxide, mix evenly to form a silicon wafer cleaning solution; wherein, the mixture of the silicon wafer cleaning additive and the alkali and hydrogen peroxide The mass ratio of the solution is 0.2-0.5:100; the alkali in the mixed solution of alkali and hydrogen peroxide is sodium hydroxide or potassium hydroxide.
S3、将硅片放入到步骤S2配置好的所述硅片清洗液中，控制清洗温度为60-70℃，清洗时间为150s-200s；之后，再在水中浸泡180s-200s，完成清洗。S3. Put the silicon wafer into the silicon wafer cleaning solution configured in step S2, control the cleaning temperature to 60-70°C, and the cleaning time to 150s-200s; then, soak it in water for 180s-200s to complete the cleaning.
所述步骤S1中，所述氧化剂包括次氯酸钠和亚氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%-3%，所述亚氯酸钠占所述添加剂的质量百分比为1%-3%。In the step S1, the oxidizing agent includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2%-3% of the mass percentage of the additive, and the sodium chlorite accounts for 1% of the mass percentage of the additive. -3%.
所述步骤S2中，所述碱和双氧水的混合溶液中含有质量百分比为0.9%-1.5%的双氧水以及质量百分比为0.06%-0.1%的碱。In step S2, the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and alkali with a mass percentage of 0.06%-0.1%.
所述步骤S3中，清洗温度为65-70℃，清洗时间为180s-200s。In the step S3, the cleaning temperature is 65-70°C, and the cleaning time is 180s-200s.
对比例1Comparative example 1
采用碱和双氧水的混合溶液对制绒后的硅片进行清洗，所述碱和双氧水的混合溶液中，含有质量百分比为0.9%-1.5%的双氧水以及质量百分比为0.06%-0.1%的碱，碱为氢氧化钠或氢氧化钾。The silicon wafer after texturing is cleaned using a mixed solution of alkali and hydrogen peroxide. The mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and an alkali with a mass percentage of 0.06%-0.1%. The base is sodium hydroxide or potassium hydroxide.
使用对比例1的清洗液以及添加实施例1-4的添加剂的清洗液分别对制绒后的硅片按本申请以同样的工序进行清洗，结果见表1。Using the cleaning solution of Comparative Example 1 and the cleaning solution adding the additives of Examples 1-4, the textured silicon wafers were cleaned according to the same process as in this application. The results are shown in Table 1.
表1Table 1
通过性能测试结果显示，在制绒后清洗工序中采用本发明实施例1-4的添加剂后，相对于对比例，清洗效果并没有下降，甚至电池效率普遍有0.01%-0.05%的提升。同时能够降低碱和双氧水的80%耗量，大幅度降低了成本。The performance test results show that after using the additives of Examples 1-4 of the present invention in the post-texturing cleaning process, compared to the comparative example, the cleaning effect does not decrease, and even the battery efficiency generally increases by 0.01%-0.05%. At the same time, it can reduce the consumption of alkali and hydrogen peroxide by 80%, significantly reducing costs.
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。The above-mentioned embodiments only express several implementation modes of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention.

Claims (10)

  1. 一种硅片清洗用添加剂，其特征在于：其各组分的质量百分含量为：3%-5%的软水剂、3%-6%的氧化剂、0.01%-0.05%的低泡耐碱渗透剂、1%-3%的缓冲剂，余量为水；其中，所述氧化剂选自于由次氯酸钠、亚氯酸钠、高氯酸钠以及过硼酸钠所组成的群组，所述低泡耐碱渗透剂为磺酸盐类表面活性剂。An additive for silicon wafer cleaning, characterized in that: the mass percentage of each component is: 3%-5% water softener, 3%-6% oxidant, 0.01%-0.05% low-foaming alkali resistance Penetrant, 1%-3% buffer, the balance is water; wherein, the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low The foam alkali-resistant penetrant is a sulfonate surfactant.
  2. 根据权利要求1所述的硅片清洗用添加剂，其特征在于：所述氧化剂包括次氯酸钠和亚氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%-3%，所述亚氯酸钠占所述添加剂的质量百分比为1%-3%。The additive for silicon wafer cleaning according to claim 1, characterized in that: the oxidant includes sodium hypochlorite and sodium chlorite, the mass percentage of the sodium hypochlorite in the additive is 2%-3%, and the chlorous acid The mass percentage of sodium in the additive is 1%-3%.
  3. 根据权利要求1所述的硅片清洗用添加剂，其特征在于：所述软水剂选自于由硬脂酸钠和乙二胺四乙酸二钠所组成的群组。The silicon wafer cleaning additive according to claim 1, wherein the water softener is selected from the group consisting of sodium stearate and disodium ethylenediaminetetraacetate.
  4. 根据权利要求1所述的硅片清洗用添加剂，其特征在于：所述缓冲剂选自于由硫酸钠、硅酸钠以及乙酸钠所组成的群组。The silicon wafer cleaning additive according to claim 1, wherein the buffer is selected from the group consisting of sodium sulfate, sodium silicate and sodium acetate.
  5. 一种硅片清洗液，其特征在于：包括碱和双氧水的混合溶液以及如权利要求1-4任一所述的硅片清洗用添加剂，其中所述碱和双氧水的混合溶液和所述硅片清洗用添加剂的质量比为100：0.2-0.5。A silicon wafer cleaning solution, characterized in that: it includes a mixed solution of alkali and hydrogen peroxide and the additive for silicon wafer cleaning according to any one of claims 1 to 4, wherein the mixed solution of alkali and hydrogen peroxide and the silicon wafer The mass ratio of cleaning additives is 100:0.2-0.5.
  6. 根据权利要求5所述的硅片清洗液，其特征在于：所述碱和双氧水的混合溶液中，含有质量百分比为0.9%-1.5%的双氧水以及质量百分比为0.06%-0.1%的氢氧化钠或氢氧化钾。The silicon wafer cleaning solution according to claim 5, characterized in that: the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and sodium hydroxide with a mass percentage of 0.06%-0.1% or potassium hydroxide.
  7. 一种硅片制绒后清洗方法，其特征在于：包括以下步骤：A method for cleaning silicon wafers after texturing, which is characterized by including the following steps:
    S1、将质量百分比为3%-5%的软水剂、3%-6%的氧化剂、0.01%-0.05%的低泡耐碱渗透剂、1%-3%的缓冲剂加入到余量的水中；混合均匀配置成硅片清洗用添加剂；其中，所述氧化剂选自于由次氯酸钠、亚氯酸钠、高氯酸钠以及过硼酸钠所组成的群组，所述低泡耐碱渗透剂为磺酸盐类表面活性剂；S1. Add 3%-5% water softener, 3%-6% oxidant, 0.01%-0.05% low-foaming alkali-resistant penetrant, and 1%-3% buffer to the remaining water. ; Mix evenly and configure to form an additive for silicon wafer cleaning; wherein, the oxidant is selected from the group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low-foaming alkali-resistant penetrant is Sulfonate surfactants;
    S2、将步骤S1中配制好的硅片清洗用添加剂加入到碱和双氧水的混合溶液中，混合均匀配置成硅片清洗液；其中，所述硅片清洗用添加剂与所述碱和双氧水的混合溶液的质量比为0.2-0.5:100；所述碱和双氧水的混合溶液中的碱采用氢氧化钠或氢氧化钾；S2. Add the silicon wafer cleaning additive prepared in step S1 to the mixed solution of alkali and hydrogen peroxide, mix evenly to form a silicon wafer cleaning solution; wherein, the mixture of the silicon wafer cleaning additive and the alkali and hydrogen peroxide The mass ratio of the solution is 0.2-0.5:100; the alkali in the mixed solution of alkali and hydrogen peroxide is sodium hydroxide or potassium hydroxide;
    S3、将硅片放入到步骤S2配置好的所述硅片清洗液中，控制清洗温度为60-70℃，清洗时间为150s-200s；之后，在水中浸泡180s-200s，完成清洗。S3. Put the silicon wafer into the silicon wafer cleaning solution configured in step S2, control the cleaning temperature to 60-70°C, and the cleaning time to 150s-200s; then, soak in water for 180s-200s to complete cleaning.
  8. 根据权利要求7所述的硅片制绒后清洗方法，其特征在于：所述步骤S1中，所述氧化剂包括次氯酸钠和亚氯酸钠，所述次氯酸钠占所述添加剂的质量百分比为2%-3%，所述亚氯酸钠占所述添加剂的质量百分比为1%-3%。The cleaning method of silicon wafer after texturing according to claim 7, characterized in that: in the step S1, the oxidant includes sodium hypochlorite and sodium chlorite, and the mass percentage of the sodium hypochlorite in the additive is 2%- 3%, the mass percentage of the sodium chlorite in the additive is 1%-3%.
  9. 根据权利要求7所述的硅片制绒后清洗方法，其特征在于：所述步骤S2中，所述碱和双氧水的混合溶液中含有质量百分比为0.9%-1.5%的双氧水以及质量百分比为0.06%-0.1%的碱。The cleaning method of silicon wafer after texturing according to claim 7, characterized in that: in the step S2, the mixed solution of alkali and hydrogen peroxide contains hydrogen peroxide with a mass percentage of 0.9%-1.5% and a mass percentage of 0.06 %-0.1% base.
  10. 根据权利要求7所述的硅片制绒后清洗方法，其特征在于：所述步骤S3中，清洗温度为65-70℃，清洗时间为180s-200s。The cleaning method of silicon wafer after texturing according to claim 7, characterized in that in step S3, the cleaning temperature is 65-70°C, and the cleaning time is 180s-200s.
PCT/CN2023/080666 2022-05-12 2023-03-10 Additive for cleaning silicon wafer, cleaning solution, and cleaning method after texturing of silicon wafer WO2023216702A1 (en)

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