CN114182356A - Low-reflectivity monocrystalline silicon wafer texturing additive, preparation method and application thereof - Google Patents
Low-reflectivity monocrystalline silicon wafer texturing additive, preparation method and application thereof Download PDFInfo
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- CN114182356A CN114182356A CN202111584648.4A CN202111584648A CN114182356A CN 114182356 A CN114182356 A CN 114182356A CN 202111584648 A CN202111584648 A CN 202111584648A CN 114182356 A CN114182356 A CN 114182356A
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- sodium
- monocrystalline silicon
- texturing
- reflectivity
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 64
- 239000000654 additive Substances 0.000 title claims abstract description 56
- 230000000996 additive effect Effects 0.000 title claims abstract description 56
- 238000002310 reflectometry Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000003513 alkali Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 150000001720 carbohydrates Chemical class 0.000 claims abstract description 15
- 239000002270 dispersing agent Substances 0.000 claims abstract description 15
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 15
- 239000004094 surface-active agent Substances 0.000 claims abstract description 15
- 150000001298 alcohols Chemical class 0.000 claims abstract description 12
- 229910001868 water Inorganic materials 0.000 claims abstract description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 48
- 210000002268 wool Anatomy 0.000 claims description 30
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 235000015424 sodium Nutrition 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 5
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 5
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 5
- 229920005552 sodium lignosulfonate Polymers 0.000 claims description 5
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 5
- 235000011152 sodium sulphate Nutrition 0.000 claims description 5
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001661 Chitosan Polymers 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 239000004115 Sodium Silicate Substances 0.000 claims description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 4
- 229920002472 Starch Polymers 0.000 claims description 4
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 claims description 4
- -1 alkyl glycoside Chemical class 0.000 claims description 4
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 4
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 claims description 4
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 4
- 229960001231 choline Drugs 0.000 claims description 4
- 229930182470 glycoside Natural products 0.000 claims description 4
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 claims description 4
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- 239000000661 sodium alginate Substances 0.000 claims description 4
- 235000010413 sodium alginate Nutrition 0.000 claims description 4
- 229940005550 sodium alginate Drugs 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 claims description 4
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 235000002639 sodium chloride Nutrition 0.000 claims description 4
- 239000001509 sodium citrate Substances 0.000 claims description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 4
- 239000001488 sodium phosphate Substances 0.000 claims description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 4
- 239000008107 starch Substances 0.000 claims description 4
- 235000019698 starch Nutrition 0.000 claims description 4
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 4
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 4
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 4
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 claims description 3
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims description 3
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001863 hydroxypropyl cellulose Substances 0.000 claims description 3
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 claims description 3
- 229920000609 methyl cellulose Polymers 0.000 claims description 3
- 239000001923 methylcellulose Substances 0.000 claims description 3
- 235000010981 methylcellulose Nutrition 0.000 claims description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 3
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 3
- 239000004299 sodium benzoate Substances 0.000 claims description 3
- 235000010234 sodium benzoate Nutrition 0.000 claims description 3
- 235000017550 sodium carbonate Nutrition 0.000 claims description 3
- 235000011083 sodium citrates Nutrition 0.000 claims description 3
- 239000000176 sodium gluconate Substances 0.000 claims description 3
- 235000012207 sodium gluconate Nutrition 0.000 claims description 3
- 229940005574 sodium gluconate Drugs 0.000 claims description 3
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 3
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 3
- 239000004317 sodium nitrate Substances 0.000 claims description 3
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 3
- 235000019794 sodium silicate Nutrition 0.000 claims description 3
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 3
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 3
- DWHOIYXAMUMQTI-UHFFFAOYSA-L disodium;2-[(1-sulfonatonaphthalen-2-yl)methyl]naphthalene-1-sulfonate Chemical compound [Na+].[Na+].C1=CC2=CC=CC=C2C(S(=O)(=O)[O-])=C1CC1=CC=C(C=CC=C2)C2=C1S([O-])(=O)=O DWHOIYXAMUMQTI-UHFFFAOYSA-L 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000002791 soaking Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910020451 K2SiO3 Inorganic materials 0.000 description 1
- RCEAADKTGXTDOA-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCCCCCCCC[Na] Chemical compound OS(O)(=O)=O.CCCCCCCCCCCC[Na] RCEAADKTGXTDOA-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- LCRMGUFGEDUSOG-UHFFFAOYSA-N naphthalen-1-ylsulfonyloxymethyl naphthalene-1-sulfonate;sodium Chemical compound [Na].C1=CC=C2C(S(=O)(OCOS(=O)(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 LCRMGUFGEDUSOG-UHFFFAOYSA-N 0.000 description 1
- 229940068918 polyethylene glycol 400 Drugs 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a low-reflectivity monocrystalline silicon piece texturing additive which comprises the following components in percentage by weight: 0.1-10% of saccharides, 0.1-5% of alcohols, 0.01-3% of dispersing agent, 0.01-1% of inorganic salt, 0.001-0.5% of surfactant, 0.01-2% of alkali and the balance of water. The low-reflectivity monocrystalline silicon piece texturing additive is used for texturing on the surface of monocrystalline silicon. When the low-reflectivity monocrystalline silicon piece texturing additive prepared by the invention is used for texturing the surface of monocrystalline silicon, the reflectivity of the surface of the monocrystalline silicon piece can be reduced, and the pyramid texturing surface on the surface of the monocrystalline silicon piece is uniform in size and high in pyramid density.
Description
Technical Field
The invention belongs to the field of chemical industry, and particularly relates to a low-reflectivity monocrystalline silicon piece texturing additive, a preparation method and application thereof.
Background
At present, in the production process of the monocrystalline silicon solar cell, in order to increase the absorption of sunlight and reduce the reflection of light, the texturing treatment of the monocrystalline silicon surface is an important means for improving the conversion efficiency of the monocrystalline silicon solar cell. The single crystal silicon surface treatment technology comprises the following steps: dry etching, wet KOH etching, laser, mechanical engraving, etc., wherein the wet KOH chemical etching method is generally used due to its advantages of low cost, high efficiency, etc.
Reaction of silicon with KOH: si + KOH + H20==K2SiO3+H2The method comprises forming pyramid microstructure texture on the surface of monocrystalline silicon by anisotropic principle, using KOH and Isopropanol (IPA) as texture-making liquid in early stage, wherein the IPA has effects of reducing surface tension of the solution and assisting reaction product H2The bubbles are quickly separated and complex with the reaction product silicate, but IPA has the defects of large usage amount (5% -10%), high volatility, harm to the environment, high reflectivity (12% -14%) and the like.
Disclosure of Invention
The invention aims to provide a low-reflectivity monocrystalline silicon piece texturing additive, a preparation method and application thereof.
In order to solve the technical problems, the embodiment of the invention provides a low-reflectivity monocrystalline silicon piece texturing additive which comprises the following components in percentage by weight: 0.1-10% of saccharides, 0.1-5% of alcohols, 0.01-3% of dispersing agent, 0.01-1% of inorganic salt, 0.001-0.5% of surfactant, 0.01-2% of alkali and the balance of water.
Wherein the saccharide is one or more of carboxymethyl chitosan, sodium alginate, alkyl glycoside, sodium carboxymethyl starch, methylcellulose, sodium carboxymethylcellulose, and sodium hydroxypropyl cellulose.
Wherein, the alcohol is one or a mixture of ethylene glycol, propylene glycol, isohexylene glycol, tributyl alcohol, pentaerythritol, pentanediol, polyethylene glycol 200-1000 and polypropylene glycol 200-1000.
The dispersing agent is one or a mixture of sodium lignosulfonate, sodium methylenedinaphthalene sulfonate, sodium citrate, sodium benzoate, sodium silicate, sodium tripolyphosphate, sodium hexametaphosphate, sodium gluconate, polyvinylpyrrolidone and sodium polyacrylate.
Wherein the inorganic salt is one or a mixture of sodium chloride, sodium sulfate, trisodium phosphate, sodium carbonate and sodium nitrate.
Wherein the surfactant is one or a mixture of sodium dodecyl benzene sulfonate, sodium dodecyl sulfate and dodecyl betaine.
Wherein the alkali is one or more of sodium hydroxide, potassium hydroxide, tetramethyl ammonium hydroxide and choline.
The invention also provides a preparation method of the low-reflectivity monocrystalline silicon piece texturing additive, which comprises the steps of adding saccharides, alcohols, a dispersing agent, inorganic salt, a surfactant and alkali into deionized water according to the weight percentage, and uniformly mixing to prepare a texturing additive solution; wherein the weight percentage of each component is as follows:
0.1% -10% of saccharides;
0.1% -5% of alcohols;
0.01 to 3 percent of dispersant;
0.01 to 1 percent of inorganic salt;
0.001% -0.5% of surfactant;
0.01 to 2 percent of alkali;
the deionized water was quantified to 100 g.
The invention also provides application of the low-reflectivity monocrystalline silicon piece texturing additive to texturing on the surface of monocrystalline silicon.
The method for texturing the surface of the monocrystalline silicon by adopting the low-reflectivity monocrystalline silicon texturing additive comprises the following steps:
s1, preparing a texturing additive: adding saccharides, alcohols, a dispersing agent, inorganic salt, a surfactant and alkali into deionized water according to weight percentage, and uniformly mixing to prepare a texturing additive solution;
s2, preparing a texturing solution: adding 3-6g of texturing additive into 1L of 0.2-2% KOH solution to obtain texturing solution;
s3, texturing: cleaning the cut monocrystalline silicon piece, and then immersing the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 150-800s, and the wool making temperature is 70-85 ℃.
The technical scheme of the invention has the following beneficial effects:
when the low-reflectivity monocrystalline silicon piece texturing additive prepared by the invention is used for texturing the surface of monocrystalline silicon, the reflectivity of the surface of the monocrystalline silicon piece can be reduced, and the pyramid texturing surface on the surface of the monocrystalline silicon piece is uniform in size and high in pyramid density.
Drawings
FIG. 1 is an SEM image of the textured surface of a monocrystalline silicon wafer according to the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
The invention provides a low-reflectivity monocrystalline silicon piece texturing additive which comprises the following components in percentage by weight: 0.1-10% of saccharides, 0.1-5% of alcohols, 0.01-3% of dispersing agent, 0.01-1% of inorganic salt, 0.001-0.5% of surfactant, 0.01-2% of alkali and the balance of water.
Preferably, the saccharide is one or more of carboxymethyl chitosan, sodium alginate, alkyl glycoside, sodium carboxymethyl starch, methylcellulose, sodium carboxymethylcellulose and sodium hydroxypropyl cellulose.
The alcohol is one or a mixture of ethylene glycol, propylene glycol, isohexylene glycol, tributyl alcohol, pentaerythritol, pentanediol, polyethylene glycol 200-1000 and polypropylene glycol 200-1000.
The dispersing agent is one or a mixture of sodium lignosulfonate, sodium methylene dinaphthalene sulfonate, sodium citrate, sodium benzoate, sodium silicate, sodium tripolyphosphate, sodium hexametaphosphate, sodium gluconate, polyvinylpyrrolidone and sodium polyacrylate.
The inorganic salt is one or a mixture of sodium chloride, sodium sulfate, trisodium phosphate, sodium carbonate and sodium nitrate.
The surfactant is one or a mixture of sodium dodecyl benzene sulfonate, sodium dodecyl sulfate and dodecyl betaine.
The alkali is one or more of sodium hydroxide, potassium hydroxide, tetramethyl ammonium hydroxide and choline.
The invention also provides a preparation method of the low-reflectivity monocrystalline silicon piece texturing additive, which comprises the steps of adding saccharides, alcohols, a dispersing agent, inorganic salt, a surfactant and alkali into deionized water according to the weight percentage, and uniformly mixing to prepare a texturing additive solution.
The method for texturing the surface of the monocrystalline silicon by using the low-reflectivity monocrystalline silicon texturing additive comprises the following steps: the wool making additive prepared by the invention is mixed with alkali liquor to obtain the low-reflectivity wool making corrosive liquid, the mass of the wool making additive accounts for 0.2-1% of the alkali liquor, the concentration of the alkali liquor is 0.2-2%, the wool making time of the wool making corrosive liquid is 800s, and the wool making temperature is 70-85 ℃.
The detailed steps are as follows:
s1, preparing a texturing additive: adding saccharides, alcohols, a dispersing agent, inorganic salt, a surfactant and alkali into deionized water according to weight percentage, and uniformly mixing to prepare a texturing additive solution;
s2, preparing a texturing solution: adding 3-6g of a texturing additive into 1L of 0.5% KOH solution to obtain texturing solution;
s3, texturing: cleaning the cut monocrystalline silicon piece, and then soaking the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 300s, and the wool making temperature is 82 ℃.
The surface SEM image of the textured monocrystalline silicon wafer is shown in FIG. 1.
The technical solution of the present invention is further illustrated below with reference to several specific examples.
Example 1
The method comprises the following steps:
preparing a texturing additive: adding 3g of carboxymethyl chitosan, 2g of isohexide, 0.5g of sodium lignosulfonate, 0.2g of sodium carbonate, 0.05g of sodium dodecyl benzene sulfonate and 1g of sodium hydroxide into deionized water, and uniformly mixing to prepare 100g of texturing additive solution.
Preparing a texturing solution: 4g of the texturing additive was added to 1L of a 0.5% KOH solution to obtain a texturing solution.
Texturing: cleaning the cut monocrystalline silicon piece, and then soaking the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 300s, and the wool making temperature is 82 ℃.
Example 2
The method comprises the following steps:
preparing a texturing additive: 1.5g of sodium alginate, 2g of ethylene glycol, 0.8g of sodium polynaphthalenesulfonate, 0.5g of sodium chloride, 0.02g of dodecyl betaine and 1g of choline are added into deionized water and uniformly mixed to prepare 100g of texturing additive solution.
Preparing a texturing solution: 4g of the texturing additive was added to 1L of a 0.5% KOH solution to obtain a texturing solution.
Texturing: cleaning the cut monocrystalline silicon piece, and then soaking the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 300s, and the wool making temperature is 82 ℃.
Example 3
The method comprises the following steps:
preparing a texturing additive: 1g of alkyl glycoside, 1.5g of pentanediol, 0.08g of polyvinylpyrrolidone, 0.5g of sodium sulfate, 0.01g of lauryl sodium sulfate and 1g of sodium hydroxide are added into deionized water, and are uniformly mixed to prepare 100g of texturing additive solution.
Preparing a texturing solution: 4g of the texturing additive was added to 1L of a 0.5% KOH solution to obtain a texturing solution.
Texturing: cleaning the cut monocrystalline silicon piece, and then soaking the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 360 seconds, and the wool making temperature is 82 ℃.
Example 4
The method comprises the following steps:
preparing a texturing additive: 2g of sodium carboxymethyl starch, 0.8g of polyethylene glycol 400, 0.8g of sodium silicate, 0.5g of sodium sulfate, 0.025g of sodium dodecyl benzene sulfonate and 1g of sodium hydroxide are added into deionized water and uniformly mixed to prepare 100g of texturing additive solution.
Preparing a texturing solution: 4g of the texturing additive was added to 1L of a 0.5% KOH solution to obtain a texturing solution.
Texturing: cleaning the cut monocrystalline silicon piece, and then soaking the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 360 seconds, and the wool making temperature is 82 ℃.
Example 5
The method comprises the following steps:
preparing a texturing additive: adding 2g of sodium carboxymethylcellulose, 0.8g of polypropylene glycol 300, 0.5g of sodium lignosulfonate, 1.2g of sodium citrate, 0.4g of trisodium phosphate, 0.015g of sodium dodecyl sulfate and 0.8g of tetramethylammonium hydroxide into deionized water, and uniformly mixing to prepare 100g of texturing additive solution.
Preparing a texturing solution: 4g of the texturing additive was added to 1L of a 0.5% KOH solution to obtain a texturing solution.
Texturing: cleaning the cut monocrystalline silicon piece, and then soaking the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 360 seconds, and the wool making temperature is 82 ℃.
Examples 1-5 were tested and the results are given in the following table:
when the low-reflectivity monocrystalline silicon piece texturing additive prepared by the invention is used for texturing the surface of monocrystalline silicon, the reflectivity of the surface of the monocrystalline silicon piece can be reduced, and the pyramid texturing surface on the surface of the monocrystalline silicon piece is uniform in size and high in pyramid density.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The low-reflectivity monocrystalline silicon piece texturing additive is characterized by comprising the following components in percentage by weight: 0.1-10% of saccharides, 0.1-5% of alcohols, 0.01-3% of dispersing agent, 0.01-1% of inorganic salt, 0.001-0.5% of surfactant, 0.01-2% of alkali and the balance of water.
2. The low-reflectivity monocrystalline silicon piece texturing additive according to claim 1, wherein the saccharide is one or more of carboxymethyl chitosan, sodium alginate, alkyl glycoside, sodium carboxymethyl starch, methyl cellulose, sodium carboxymethyl cellulose and sodium hydroxypropyl cellulose.
3. The additive for texturing a monocrystalline silicon wafer with low reflectivity as defined in claim 1, wherein the alcohol is one or more of ethylene glycol, propylene glycol, isohexylene glycol, tributyl alcohol, pentaerythritol, pentanediol, polyethylene glycol 200-.
4. The low-reflectivity monocrystalline silicon piece texturing additive according to claim 1, wherein the dispersant is one or a mixture of sodium lignosulfonate, sodium methylenedinaphthalene sulfonate, sodium citrate, sodium benzoate, sodium silicate, sodium tripolyphosphate, sodium hexametaphosphate, sodium gluconate, polyvinylpyrrolidone and sodium polyacrylate.
5. The low-reflectivity monocrystalline silicon wafer texturing additive according to claim 1, wherein the inorganic salt is one or more of sodium chloride, sodium sulfate, trisodium phosphate, sodium carbonate and sodium nitrate.
6. The low-reflectivity monocrystalline silicon wafer texturing additive according to claim 1, wherein the surfactant is one or a mixture of sodium dodecyl benzene sulfonate, sodium dodecyl sulfate and dodecyl betaine.
7. The low-reflectivity monocrystalline silicon wafer texturing additive according to claim 1, wherein the alkali is one or more of sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide and choline.
8. A preparation method of a low-reflectivity monocrystalline silicon piece texturing additive is characterized in that saccharides, alcohols, a dispersing agent, inorganic salt, a surfactant and alkali are added into deionized water according to weight percentage and are uniformly mixed to prepare a texturing additive solution; wherein the weight percentage of each component is as follows:
0.1% -10% of saccharides;
0.1% -5% of alcohols;
0.01 to 3 percent of dispersant;
0.01 to 1 percent of inorganic salt;
0.001% -0.5% of surfactant;
0.01 to 2 percent of alkali;
the deionized water was quantified to 100 g.
9. The application of the low-reflectivity monocrystalline silicon piece texturing additive is characterized in that the additive is used for texturing the surface of monocrystalline silicon.
10. Use of the low reflectance monocrystalline silicon wafer texturing additive according to claim 9, wherein texturing the monocrystalline silicon surface comprises the steps of:
s1, preparing a texturing additive: adding saccharides, alcohols, a dispersing agent, inorganic salt, a surfactant and alkali into deionized water according to weight percentage, and uniformly mixing to prepare a texturing additive solution;
s2, preparing a texturing solution: adding 3-6g of texturing additive into 1L of 0.2-2% KOH solution to obtain texturing solution;
s3, texturing: cleaning the cut monocrystalline silicon piece, and then immersing the cut monocrystalline silicon piece into a wool making solution, wherein the wool making time is 150-800s, and the wool making temperature is 70-85 ℃.
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