CN116314473A - P-type IBC solar cell and texturing method thereof - Google Patents
P-type IBC solar cell and texturing method thereof Download PDFInfo
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- CN116314473A CN116314473A CN202310530260.9A CN202310530260A CN116314473A CN 116314473 A CN116314473 A CN 116314473A CN 202310530260 A CN202310530260 A CN 202310530260A CN 116314473 A CN116314473 A CN 116314473A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 148
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- 239000000654 additive Substances 0.000 claims abstract description 57
- 230000000996 additive effect Effects 0.000 claims abstract description 57
- 239000005360 phosphosilicate glass Substances 0.000 claims abstract description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 39
- 229920005591 polysilicon Polymers 0.000 claims abstract description 38
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 34
- 239000003513 alkali Substances 0.000 claims abstract description 32
- 239000011574 phosphorus Substances 0.000 claims abstract description 32
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 210000002268 wool Anatomy 0.000 claims abstract description 30
- 230000005641 tunneling Effects 0.000 claims abstract description 28
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 claims abstract description 17
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims abstract description 17
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 17
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 17
- 229920003063 hydroxymethyl cellulose Polymers 0.000 claims abstract description 17
- 229940031574 hydroxymethyl cellulose Drugs 0.000 claims abstract description 17
- 239000010452 phosphate Substances 0.000 claims abstract description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 17
- 239000011734 sodium Substances 0.000 claims abstract description 17
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 17
- 239000000176 sodium gluconate Substances 0.000 claims abstract description 17
- 235000012207 sodium gluconate Nutrition 0.000 claims abstract description 17
- 229940005574 sodium gluconate Drugs 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 42
- 239000000243 solution Substances 0.000 claims 2
- 239000012670 alkaline solution Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000000903 blocking effect Effects 0.000 abstract description 4
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005406 washing Methods 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 239000005416 organic matter Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- 230000036632 reaction speed Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 3
- 235000010234 sodium benzoate Nutrition 0.000 description 3
- 239000004299 sodium benzoate Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a P-type IBC solar cell and a texturing method thereof, and relates to the technical field of photovoltaics. The method comprises the following steps: providing a texturing substrate comprising: the P-type silicon substrate, the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer; the backlight side of the P-type silicon substrate includes: a P-type region and an N-type region; the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphorus silicon glass layer are sequentially laminated in an N-type region in the backlight surface of the P-type silicon substrate; the P-type region in the back surface of the P-type silicon substrate is exposed; using a texturing solution to perform texturing on a texturing substrate; the wool making liquid comprises: alkali liquor and texturing additive; the texturing additive comprises: ethylene oxide, phosphate, sodium gluconate, sodium hydroxymethyl cellulose and a solvent. The P-type area is corroded by alkali liquor, and a suede structure is formed in the P-type area; in the N-type region, the phosphosilicate glass layer is used as a blocking layer, and ethylene oxide inhibits the reaction of alkali liquor and the phosphosilicate glass layer, so that the structure of the N-type region is prevented from being damaged, and the appearance yield is improved.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a P-type IBC solar cell and a texturing method thereof.
Background
The solar energy is taken as a renewable resource, and has the advantages of high efficiency and no pollution. With the development of photovoltaic technology, solar cells are widely used. From both theoretical support and current market share, P-type monocrystalline PERC (Passivated Emitter and Rear Cell, passivated emitter and back cell technology) solar cells are the dominant product in the solar cell production industry, and the price of P-type monocrystalline silicon substrates is also gradually reduced with the advancement of silicon substrate production technology. But the mass production conversion efficiency of the P-type single crystal PERC solar cell is difficult to break through by 23.5%. The IBC solar cell is short for back electrode contact (Interdigitated back contact) silicon solar cell, and is characterized in that the surface of the IBC solar cell facing the light side is not provided with grid-shaped electrodes, and positive and negative electrodes are arranged on the backlight side in a crossing manner. The structure enables the IBC solar cell to 'zero shelter' towards the light side, thereby increasing the light absorption and utilization and realizing the remarkable improvement of the conversion efficiency.
However, in the process of manufacturing the P-type IBC solar cell, after the laser grooving step, when the P-type region in the back surface of the P-type silicon substrate is textured, the N-type region in the back surface of the P-type silicon substrate is textured, so that the structure of the N-type region is damaged, and the appearance yield of the P-type IBC solar cell is reduced.
Disclosure of Invention
The invention provides a P-type IBC solar cell and a texturing method thereof, and aims to solve the problem that in the preparation process of the P-type IBC solar cell in the prior art, when a P-type region in a backlight surface of a P-type silicon substrate is textured after a laser grooving step, an N-type region in the backlight surface of the P-type silicon substrate is textured, the structure of the N-type region is damaged, and the appearance yield of the P-type IBC solar cell is reduced.
In a first aspect of the present invention, there is provided a texturing method for a P-type IBC solar cell, including:
providing a texturing substrate comprising: the P-type silicon substrate, the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer; the backlight surface of the P-type silicon substrate comprises: a P-type region and an N-type region; the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer are sequentially laminated in an N-type region in the backlight surface of the P-type silicon substrate; the P-type region in the backlight surface of the P-type silicon substrate is exposed;
using a texturing solution to perform texturing on the texturing substrate; the wool making liquid comprises: alkali liquor and texturing additive; the texturing additive comprises: ethylene oxide, phosphate, sodium gluconate, sodium hydroxymethyl cellulose and a solvent.
In the present invention, there is provided a texturing substrate comprising: the P-type silicon substrate, the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer; the backlight surface of the P-type silicon substrate comprises: a P-type region and an N-type region; the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer are sequentially laminated in an N-type region in the backlight surface of the P-type silicon substrate; the P-type region in the backlight surface of the P-type silicon substrate is exposed; in the process of texturing the texturing substrate by using a texturing solution, exposing a P-type region in a backlight surface of a P-type silicon substrate, and corroding the P-type silicon substrate by alkali liquor in the texturing solution through reaction with the P-type silicon substrate to form a textured structure in the P-type region; the solvent in the texturing additive can be deionized water, and is used for dissolving phosphate, sodium gluconate and sodium hydroxymethyl cellulose; phosphate, sodium gluconate and sodium hydroxymethyl cellulose in the wool making additive can play a role in dissolving and stripping organic matter contamination, so that the influence of the organic matter contamination on wool making is reduced, meanwhile, the wool making additive has a certain inhibition effect on wool making, the reaction speed of alkali liquor and a P-type silicon substrate can be inhibited, and excessive corrosion of a P-type region is avoided; the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate, the phosphosilicate glass layer is used as a blocking layer to protect the structure of the N-type region, and the ethylene oxide in the texturing additive can inhibit the reaction of alkali liquor and the phosphosilicate glass layer in the texturing process, so that the phosphosilicate glass layer is basically not reacted with the alkali liquor in the texturing process, thereby avoiding damaging the structure of the N-type region and improving the appearance yield.
Optionally, the mass percent of ethylene oxide in the texturing additive is 0.5% to 2%.
Optionally, the mass percentage of phosphate in the texturing additive is 0.01-5%;
the mass percentage of the sodium gluconate in the texturing additive is 0.01-10%;
the mass percentage of the sodium hydroxymethyl cellulose in the texturing additive is 0.01-5%.
Optionally, the alkali solution is a potassium hydroxide solution, and the volume concentration of the potassium hydroxide solution is 1.5% to 3%.
Optionally, the volume ratio of the alkali liquor to the texturing additive in the texturing liquid is (73 to 110): 1.
Optionally, the time for texturing the texturing substrate is 400 seconds to 520 seconds.
Optionally, the temperature for texturing the texturing substrate is 75-80 ℃.
Optionally, after the texturing substrate, the method further includes:
and removing the residual texturing solution on the surface of the texturing substrate.
Optionally, after the texturing substrate, the method further includes:
and removing the phosphosilicate glass layer.
In a second aspect of the present invention, there is provided a P-type IBC solar cell comprising: a P-type silicon substrate, a tunneling oxide layer and a phosphorus doped polysilicon layer; the backlight surface of the P-type silicon substrate comprises: a P-type region and an N-type region; the tunneling oxide layer and the phosphorus doped polysilicon layer are sequentially laminated in an N-type region in the backlight surface of the P-type silicon substrate; the P-type region in the backlight surface of the P-type silicon substrate is of a suede structure; the pile structure is produced by the pile making method according to the first aspect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart showing the steps of a method for texturing a P-type IBC solar cell in an embodiment of the invention;
FIG. 2 is a schematic diagram of a P-type IBC solar cell according to an embodiment of the invention;
FIG. 3 is a flow chart showing the steps of another method for texturing a P-type IBC solar cell in accordance with an embodiment of the present invention.
Reference numerals illustrate:
11-tunneling oxide layer, 13-phosphorus doped polysilicon layer, 14-aluminum oxide layer, 15-silicon nitride layer, 16-P type silicon substrate, 17-silver electrode and 18-aluminum electrode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a method for making wool of a P-type IBC solar cell, referring to FIG. 1, FIG. 1 shows a step flow chart of the method for making wool of the P-type IBC solar cell in the embodiment of the invention, and the method comprises the following steps:
The tunneling oxide layer 11 and the phosphorus doped polysilicon layer 13 play a passivation role in the P-type IBC solar cell; the phosphorus-doped polysilicon layer 13 may be formed during the preparation of the phosphorus-doped polysilicon layer 13, for example, the preparation of the phosphorus-doped polysilicon layer 13 may be performed by preparing a polysilicon layer on a side of the tunneling oxide layer 11 away from the P-type silicon substrate 16, performing phosphorus diffusion on the polysilicon layer, obtaining the phosphorus-doped polysilicon layer 13 after the phosphorus diffusion is completed, and forming the phosphorus-doped polysilicon layer 13 on a side of the phosphorus-doped polysilicon layer 13 away from the P-type silicon substrate 16. The P-type region in the back surface of the P-type silicon substrate 16 is exposed, which may be obtained by laser grooving.
102, using a texturing solution to perform texturing on the texturing substrate; the wool making liquid comprises: alkali liquor and texturing additive; the texturing additive comprises: ethylene oxide, phosphate, sodium gluconate, sodium hydroxymethyl cellulose and a solvent.
The wool making liquid comprises: alkali liquor and a texturing additive, wherein in the process of texturing a texturing substrate by using a texturing solution, a P-type region in a backlight surface of the P-type silicon substrate 16 is exposed, and the alkali liquor in the texturing solution reacts with the P-type silicon substrate 16 to corrode the P-type silicon substrate 16 so as to form a textured structure in the P-type region; the solvent in the texturing additive can be deionized water, and is used for dissolving phosphate, sodium gluconate and sodium hydroxymethyl cellulose; phosphate, sodium gluconate and sodium hydroxymethyl cellulose in the wool making additive can play a role in dissolving and stripping organic matter contamination, so that the influence of the organic matter contamination on wool making is reduced, meanwhile, the wool making additive has a certain inhibition effect on wool making, the reaction speed of alkali liquor and the P-type silicon substrate 16 can be inhibited, and excessive corrosion of a P-type region is avoided; the tunneling oxide layer 11, the phosphorus doped polysilicon layer 13 and the phosphosilicate glass layer are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate 16, the phosphosilicate glass layer is used as a blocking layer to protect the N-type region, and the ethylene oxide in the wool making additive can inhibit the reaction of alkali liquor and the phosphosilicate glass layer in the wool making process, so that the phosphosilicate glass layer is basically not reacted with the alkali liquor in the wool making process, thereby avoiding damaging the structure of the N-type region and improving the appearance yield.
The inventor found that in the prior art, when the P-type region in the back surface of the P-type silicon substrate 16 is textured after the laser grooving step in the process of manufacturing the P-type IBC solar cell, the N-type region in the back surface of the P-type silicon substrate 16 is also textured, and the structure of the N-type region is damaged, so that the appearance yield of the P-type IBC solar cell is reduced. In the present invention, there is provided a texturing substrate comprising: a P-type silicon substrate 16, a tunneling oxide layer 11, a phosphorus doped polysilicon layer 13 and a phosphosilicate glass layer; the backlight side of the P-type silicon substrate 16 includes: a P-type region and an N-type region; the tunneling oxide layer 11, the phosphorus doped polysilicon layer 13 and the phosphosilicate glass layer are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate 16; the P-type region in the back side of the P-type silicon substrate 16 is exposed; in the process of texturing a textured substrate by using a texturing solution, exposing a P-type region in a backlight surface of the P-type silicon substrate 16, and corroding the P-type silicon substrate 16 by alkali liquor in the texturing solution through reaction with the P-type silicon substrate 16 to form a textured structure in the P-type region; the solvent in the texturing additive can be deionized water, and is used for dissolving phosphate, sodium gluconate and sodium hydroxymethyl cellulose; phosphate, sodium gluconate and sodium hydroxymethyl cellulose in the wool making additive can play a role in dissolving and stripping organic matter contamination, so that the influence of the organic matter contamination on wool making is reduced, meanwhile, the wool making additive has a certain inhibition effect on wool making, the reaction speed of alkali liquor and the P-type silicon substrate 16 can be inhibited, and excessive corrosion of a P-type region is avoided; the tunneling oxide layer 11, the phosphorus doped polysilicon layer 13 and the phosphosilicate glass layer are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate 16, the phosphosilicate glass layer is used as a blocking layer to protect the structure of the N-type region, and the ethylene oxide in the texturing additive can inhibit the reaction of alkali liquor and the phosphosilicate glass layer in the texturing process, so that the phosphosilicate glass layer is basically not reacted with the alkali liquor in the texturing process, thereby avoiding damaging the structure of the N-type region and improving the appearance yield.
In the embodiment of the present invention, in the case where the outermost side of the light-facing surface of the P-type silicon substrate 16 includes a phosphosilicate glass layer, before the texturing substrate is textured with the texturing solution, the phosphosilicate glass layer on the outermost side of the light-facing surface of the P-type silicon substrate 16 may be removed with an HF (hydrogen fluoride) solution, so that after the texturing, the light-facing surface of the P-type silicon substrate 16 has a textured structure, thereby reducing the surface reflectivity and increasing the conversion efficiency of the P-type IBC solar cell. The outermost phosphosilicate glass layer on the light-facing surface of the P-type silicon substrate 16 is removed with an HF solution, and the volume concentration of the HF solution may be 6% to 12%, for example, the volume concentration of the HF solution may be 6%, or 8%, or 9%, or 10%, or 11%, or 12%, and the rate of removing the phosphosilicate glass layer with the HF solution is high, thereby saving the process time. In the embodiment of the invention, when the outermost side of the light-facing surface of the P-type silicon substrate 16 does not include a phosphosilicate glass layer, when the wool-making substrate is subjected to wool-making by using the wool-making liquid, the light-facing surface of the P-type silicon substrate 16 is blocked by the non-phosphosilicate glass layer, the light-facing surface of the P-type silicon substrate 16 is corroded by alkali liquor, and after the wool-making substrate is subjected to wool-making by using the wool-making liquid, the light-facing surface of the P-type silicon substrate 16 is in a wool-making structure, so that the surface reflectivity can be reduced, and the conversion efficiency of the P-type IBC solar cell can be increased.
Optionally, the mass percent of ethylene oxide in the texturing additive is 0.5% to 2%. For example, the mass percent of ethylene oxide in the texturing additive may be 0.5%, or 0.7%, or 1%, or 1.1%, or 1.5%, or 2%. The mass percentage of the ethylene oxide in the texturing additive is 0.5-2%, so that the ethylene oxide can better inhibit the reaction of alkali liquor and a phosphosilicate glass layer, plays a role in protecting the structure of an N-type region, and prevents the texturing effect of a P-type region from being influenced under the condition of high mass percentage of the ethylene oxide.
Optionally, the phosphate in the texturing additive is 0.01 to 5% by mass; the mass percentage of the sodium gluconate in the texturing additive is 0.01 to 10 percent; the mass percentage of the sodium hydroxymethyl cellulose in the texturing additive is 0.01 to 5 percent. For example, the phosphate in the texturing additive may be 0.01%, or 1%, or 2%, or 3%, or 4%, or 5% by mass; the mass percent of the sodium gluconate in the texturing additive can be 0.01%, or 2%, or 4%, or 6%, or 8%, or 10%; the mass percentage of the sodium hydroxymethyl cellulose in the texturing additive is 0.01 percent, or 1 percent, or 2 percent, or 3 percent, or 4 percent, or 5 percent. The mass percentage of phosphate in the texturing additive is 0.01 to 5 percent; the mass percentage of the sodium gluconate in the texturing additive is 0.01 to 10 percent; the sodium hydroxymethyl cellulose in the wool making additive accounts for 0.01 to 5 percent by mass, pyramid suede structures with proper shapes and sizes can be obtained, the inhibition effect on the wool is too strong under the condition of avoiding high mass percent, the depth of the suede structure prepared in a P-type area is too shallow, and the effect of reducing surface reflection is poor.
Optionally, the alkali solution is a potassium hydroxide solution, and the volume concentration of the potassium hydroxide solution is 1.5-3%. For example, the volume concentration of potassium hydroxide solution may be 1.5%, or 1.8%, or 2%, or 2.3%, or 2.5%, or 3%. The alkali liquor is potassium hydroxide solution, the alkalinity of potassium hydroxide is strong, the potassium hydroxide can react with the P-type silicon substrate 16 quickly to form a suede structure, the volume concentration of the potassium hydroxide solution is 1.5-3%, the speed of the P-type region making is ensured to be high, the potassium hydroxide solution and the P-type silicon substrate 16 can be prevented from reacting too severely, and the P-type region is corroded excessively, so that the P-type silicon substrate 16 is thinner. Alternatively, the lye may be sodium hydroxide solution.
Optionally, the volume ratio of alkali liquor to the texturing additive in the texturing solution is (73 to 110): 1. For example, the volume ratio of lye to the texturing additive may be 73:1, or 80:1, or 88:1, or 95:1, or 100:1, or 110:1. For example, the volume of lye is 330L (liters) and the volume of the texturing additive is 4L. The volume ratio of alkali liquor to the texturing additive is (73-110): 1, so that the problem that the depth of the textured structure manufactured in the P-type region is too shallow due to small volume ratio can be avoided, the effect of reducing surface reflection is poor, and meanwhile, the problem that the P-type region is excessively corroded due to large volume ratio can be avoided, so that the P-type silicon substrate 16 is thinner.
Alternatively, the texturing of the texturing substrate is performed for a time period of 400 seconds to 520 seconds. For example, the texturing substrate may be performed for 400s (seconds), or 420s, or 440s, or 460s, or 480s, or 520s. The time for the texturing of the texturing substrate is 400 to 520 seconds, so that the short time can be avoided, the depth of the textured structure manufactured in the P-type region is shallow, the effect of reducing the surface reflection is poor, and meanwhile, the excessive corrosion of the P-type region caused by the long time is avoided, so that the P-type silicon substrate 16 is thinner.
Optionally, the temperature of the texturing substrate is 75 ℃ to 80 ℃. For example, the temperature at which the texturing substrate is textured is 75 ℃ (degrees celsius), or 76 ℃, or 77 ℃, or 78 ℃, or 79 ℃, or 80 ℃. The temperature of the texturing substrate is 75-80 ℃, the reaction speed of alkali liquor and the P-type silicon substrate 16 is high, the P-type region can form a textured structure quickly, and meanwhile, excessive corrosion of the P-type region under the condition of overhigh temperature is avoided, so that the P-type silicon substrate 16 is thin.
Optionally, after the texturing of the texturing substrate, the method further comprises: the residual texturing solution on the surface of the texturing substrate is removed, so that the influence of the residual texturing solution on the surface of the texturing substrate on the performance of a subsequent step and a P-type IBC solar cell can be avoided, and in particular, the residual texturing solution on the surface of the texturing substrate can be removed by adopting modes of water washing, acid washing and the like.
Optionally, after the texturing of the texturing substrate, the method further comprises: and removing the phosphosilicate glass layer. The phosphorus atom concentration in the phosphosilicate glass layer is higher, and the phosphosilicate glass layer is removed, so that the surface phosphorus atom concentration can be reduced, further the surface recombination center is reduced, and the passivation performance is improved.
The embodiment of the invention also provides a P-type IBC solar cell, which comprises: a P-type silicon substrate 16, a tunneling oxide layer 11, and a phosphorus doped polysilicon layer 13; the backlight side of the P-type silicon substrate 16 includes: a P-type region and an N-type region; the tunneling oxide layer 11 and the phosphorus doped polysilicon layer 13 are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate 16; the P-type region in the back surface of the P-type silicon substrate 16 is textured; the suede structure is prepared by the above-mentioned method. Referring to fig. 2, fig. 2 shows a schematic structural diagram of a P-type IBC solar cell according to an embodiment of the present invention, where the P-type IBC solar cell includes: a P-type silicon substrate 16, a tunneling oxide layer 11, a phosphorus doped polysilicon layer 13, an aluminum oxide layer 14 and a silicon nitride layer 15; the backlight side of the P-type silicon substrate 16 includes: a P-type region and an N-type region; the tunneling oxide layer 11, the phosphorus doped polysilicon layer 13, the aluminum oxide layer 14 and the silicon nitride layer 15 are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate 16; an aluminum oxide layer 14, a silicon nitride layer 15 are sequentially laminated in the P-type region in the back surface of the P-type silicon substrate 16; the aluminum oxide layer 14 and the silicon nitride layer 15 are sequentially laminated on the light-facing surface of the P-type silicon substrate 16; the P-type region in the back surface of the P-type silicon substrate 16 is textured; the light-facing surface of the P-type silicon substrate 16 is of a suede structure, and the backlight side of the P-type IBC solar cell is provided with a silver electrode 17 and an aluminum electrode 18. By adopting the texturing method, the texturing substrate is textured by using the texturing liquid, the texture structure is formed in the P-type region, the structure of the N-type region is prevented from being damaged, and the appearance yield of the P-type IBC solar cell is improved.
The invention will be further explained below with reference to specific examples.
Example 1
Referring to fig. 3, fig. 3 shows a step flow chart of another method for texturing a P-type IBC solar cell according to an embodiment of the present invention, specifically including the following steps:
(1) Providing a texturing substrate comprising: a P-type silicon substrate 16, a tunneling oxide layer 11, a phosphorus doped polysilicon layer 13 and a phosphosilicate glass layer; the backlight side of the P-type silicon substrate 16 includes: a P-type region and an N-type region; the tunneling oxide layer 11, the phosphorus doped polysilicon layer 13 and the phosphosilicate glass layer are sequentially laminated in the N-type region in the backlight surface of the P-type silicon substrate 16; the P-type region in the back side of the P-type silicon substrate 16 is exposed; the wool making matrix is prepared by the following steps:
s1, performing double-sided polishing treatment on a P-type silicon substrate 16;
s2, preparing a tunneling oxide layer 11 and a polycrystalline silicon layer on the two sides of the polished P-type silicon substrate 16;
s3, performing double-sided phosphorus diffusion on the polysilicon layer to form a phosphorus doped polysilicon layer 13, and generating a phosphorus silicon glass layer on one side of the phosphorus doped polysilicon layer 13 far away from the P-type silicon substrate 16;
s4, carrying out laser grooving on the backlight surface of the P-type silicon substrate 16 according to a specific laser pattern to form a P-type region and an N-type region.
(2) Removing the outermost phosphosilicate glass layer of the light-facing surface of the P-type silicon substrate 16 with an HF solution having a volume concentration of 10%;
(3) Cleaning, texturing and post-processing, comprising the following steps:
(1) pre-cleaning: removing damage on the surface of the P-type silicon substrate 16 by adopting a KOH (potassium hydroxide) solution with the volume concentration of 1% and an H2O2 (hydrogen peroxide) solution with the volume concentration of 8%, wherein the temperature is 70 ℃ and the time is 120 s;
(2) washing: the time is 110s, and the residual liquid and silicate on the surface of the P-type silicon substrate 16 are washed by water;
(3) using a texturing solution to perform texturing on the texturing substrate obtained in the step (2); the wool making liquid comprises: alkali liquor and a texturing additive, wherein the alkali liquor is KOH solution with volume concentration of 2%, and the texturing additive comprises: ethylene oxide, phosphate, sodium gluconate, sodium hydroxymethyl cellulose and a solvent; the solvent is deionized water, the mass percentage of ethylene oxide in the texturing additive is 1%, the mass percentage of phosphate is 5%, and the mass percentage of sodium gluconate is 5%; the mass percentage of the sodium hydroxymethyl cellulose is 5 percent, and the balance is deionized water; adding 3L of texturing additive into a groove body with the temperature of 80 ℃ and the volume concentration of 330L of KOH solution of 2%, wherein the time is 520s, and pyramid suedes are formed in the P-type areas in the light facing surface of the P-type silicon substrate 16 and the back surface of the P-type silicon substrate 16;
(4) washing: the time is 110s, and the residual liquid and silicate on the surface of the P-type silicon substrate 16 are washed by water;
(5) post-cleaning: removing residual texturing additive on the surface of the P-type silicon substrate 16 by adopting a KOH solution with the volume concentration of 0.4% and an H2O2 solution with the volume concentration of 4%, wherein the temperature is 70 ℃ and the time is 100 s;
(6) washing: the time is 110s, and the residual liquid and silicate on the surface of the P-type silicon substrate 16 are washed by water;
(7) acid washing: neutralizing alkali liquor remained on the surface of the P-type silicon substrate 16 for 120 seconds by adopting an HF solution with the volume concentration of 10 percent and an HCl (hydrogen chloride) solution with the volume concentration of 15 percent, reacting HCl with metal ions to form a reactant dissolved in water, and removing a phosphosilicate glass layer in an N-type region by HF;
(8) washing: the time is 120s, and the residual liquid on the surface of the P-type silicon substrate 16 is washed by water;
(9) slowly lifting: the time is 100s, and the dehydration is carried out by slow lifting;
and (3) drying: the temperature is 100 ℃ and the time is 600s, the basket and the surface moisture of the P-type silicon substrate 16 are dried, and the basket is used as a carrier for carrying the P-type silicon substrate 16.
(4) Double sided ALD (Atomic Layer Deposition ) of the aluminum oxide plated layer 14 for passivation;
(5) Plating a silicon nitride layer 15 on the light facing surface of the structure obtained in the step (4), wherein the silicon nitride layer 15 plays a role in antireflection;
(6) Plating a silicon nitride layer 15 on the backlight surface of the structure obtained in the step (5), wherein the silicon nitride layer 15 plays a role in antireflection;
(7) An electrode is prepared.
Alternatively, in step (1) in step (3), the volume concentration of the KOH solution may be 0.5% to 1%, the volume concentration of the H2O2 solution may be 5% to 8%, the temperature may be 60 ℃ to 70 ℃, and the time may be 100s to 120s. Optionally, in step (2) in step (3), the time may be 100s to 130s. Optionally, in step (4) in step (3), the time may be 100s to 130s. Alternatively, in step (5) in step (3), the volume concentration of the KOH solution may be 0.2% to 0.4%, the volume concentration of the H2O2 solution may be 2% to 4%, the temperature may be 60 ℃ to 70 ℃, and the time may be 100s to 120s. Optionally, in step (6) in step (3), the time may be 100s to 130s. Alternatively, in step (7) in step (3), the volume concentration of the HF solution may be 8% to 12%, the volume concentration of the HCl solution may be 10% to 15%, and the time may be 100s to 120s. Optionally, in step (8) in step (3), the time may be 100s to 130s. Optionally, in step (9) in step (3), the time may be 80s to 100s. Optionally, in step (3), the temperature may be 85 ℃ to 115 ℃ and the time may be 500s to 600s.
Example 2
In the step (3), the volume concentration of the KOH solution is 2.50%; other steps and process parameters were the same as in example 1.
Example 3
In the step (3), the volume of the added texturing additive is 4L; other steps and process parameters were the same as in example 1.
Comparative example 1
In step (3) of step (3), the texturing additive includes: the water-based paint comprises, by mass, 4% of sodium benzoate, 5% of a surfactant, 10% of other chemical components and the balance of deionized water; other steps and process parameters were the same as in example 1.
Comparative example 2
In step (3) of step (3), the texturing additive includes: the water-based paint comprises, by mass, 4% of sodium benzoate, 5% of a surfactant, 10% of other chemical components and the balance of deionized water; other steps and process parameters were the same as in example 2.
Comparative example 3
In step (3) of step (3), the texturing additive includes: the water-based paint comprises, by mass, 4% of sodium benzoate, 5% of a surfactant, 10% of other chemical components and the balance of deionized water; other steps and process parameters were the same as in example 3.
The P-type IBC solar cells prepared in the above examples and comparative examples were used to perform a reflectance test of the light-facing surface of the P-type IBC solar cell and an appearance test of the P-type IBC solar cell, each reflectance value was obtained by averaging the reflectance values of all P-type IBC solar cells in each group, and the test data are shown in table 1 below.
Table 1 test data table for examples and comparative examples
From table 1 above, it can be seen that the reflectance of example 1 was reduced relative to comparative example 1, the reflectance of example 2 was reduced relative to comparative example 2, and the reflectance of example 3 was reduced relative to comparative example 3, and that the reflectance of examples was lower than that of comparative examples when the volume concentration of KOH solution and the volume of the added texturing additive were the same. The reflectivity of the light-facing surface of the P-type IBC solar cell of the embodiment is 10.1% or less. By the method, the reflectivity of the light facing surface of the P-type IBC solar cell is low, and the light absorption of the P-type IBC solar cell can be enhanced. Meanwhile, by adopting the wool making method of the P-type IBC solar cell provided by the embodiment of the invention, the light-facing surface of the P-type silicon substrate 16 and the P-type region in the backlight surface of the P-type silicon substrate 16 form pyramid wool surfaces, the structure of the backlight surface N-type region is not damaged, as can be seen from the table 1 above, the number of appearance defects caused by wool making of the embodiment is 0, compared with the comparative example, the number of appearance defects caused by wool making is obviously reduced, the appearance yield of the embodiment is obviously improved compared with the comparative example, and the method provided by the embodiment of the invention is explained, the structure of the N-type region is prevented from being damaged, and the appearance yield is improved.
It should be noted that, the above-mentioned texturing method of the P-type IBC solar cell and the P-type IBC solar cell may be referred to each other, and the same or similar effects may be achieved.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts referred to are not necessarily all required for the embodiments of the present application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (10)
1. The texturing method for the P-type IBC solar cell is characterized by comprising the following steps of:
providing a texturing substrate comprising: the P-type silicon substrate, the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer; the backlight surface of the P-type silicon substrate comprises: a P-type region and an N-type region; the tunneling oxide layer, the phosphorus doped polysilicon layer and the phosphosilicate glass layer are sequentially laminated in an N-type region in the backlight surface of the P-type silicon substrate; the P-type region in the backlight surface of the P-type silicon substrate is exposed;
using a texturing solution to perform texturing on the texturing substrate; the wool making liquid comprises: alkali liquor and texturing additive; the texturing additive comprises: ethylene oxide, phosphate, sodium gluconate, sodium hydroxymethyl cellulose and a solvent.
2. A method of texturing as claimed in claim 1, wherein the mass percentage of ethylene oxide in the texturing additive is from 0.5% to 2%.
3. A method of texturing as claimed in claim 2, wherein the phosphate in the texturing additive is present in an amount of 0.01% to 5% by mass;
the mass percentage of the sodium gluconate in the texturing additive is 0.01-10%;
the mass percentage of the sodium hydroxymethyl cellulose in the texturing additive is 0.01-5%.
4. A method according to claim 3, wherein the alkaline solution is a potassium hydroxide solution having a volume concentration of 1.5% to 3%.
5. The method according to claim 4, wherein the volume ratio of the alkali liquor to the texturing additive in the texturing liquid is (73 to 110): 1.
6. A method of texturing according to any one of claims 1 to 5, wherein the time for texturing the textured substrate is from 400 seconds to 520 seconds.
7. A method of texturing according to any one of claims 1 to 5, wherein the temperature at which the texturing substrate is textured is from 75 degrees celsius to 80 degrees celsius.
8. The method of any one of claims 1 to 5, wherein after said texturing said textured substrate, said method further comprises:
and removing the residual texturing solution on the surface of the texturing substrate.
9. The method of any one of claims 1 to 5, wherein after said texturing said textured substrate, said method further comprises:
and removing the phosphosilicate glass layer.
10. A P-type IBC solar cell, comprising: a P-type silicon substrate, a tunneling oxide layer and a phosphorus doped polysilicon layer; the backlight surface of the P-type silicon substrate comprises: a P-type region and an N-type region; the tunneling oxide layer and the phosphorus doped polysilicon layer are sequentially laminated in an N-type region in the backlight surface of the P-type silicon substrate; the P-type region in the backlight surface of the P-type silicon substrate is of a suede structure; the pile structure is produced by the pile making method of any one of claims 1 to 9.
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| JP2017045930A (en) * | 2015-08-28 | 2017-03-02 | 日立化成株式会社 | COMPOSITION FOR FORMING n-TYPE DIFFUSION LAYER, MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE HAVING n-TYPE DIFFUSION LAYER, AND MANUFACTURING METHOD FOR SOLAR CELL |
| US20220091303A1 (en) * | 2019-01-10 | 2022-03-24 | Dai Nippon Printing Co., Ltd. | Antireflective member, and polarizing plate, image display device and antireflective article each equipped with same |
| CN113272136A (en) * | 2019-01-10 | 2021-08-17 | 大日本印刷株式会社 | Antireflection member, and polarizing plate, image display device, and antireflection article provided with same |
| CN112877784A (en) * | 2019-12-24 | 2021-06-01 | 武汉宜田科技发展有限公司 | Additive for silicon wafer texturing by alkali liquor |
| CN112458540A (en) * | 2020-10-27 | 2021-03-09 | 山西潞安太阳能科技有限责任公司 | Solar single crystal texturing process |
| CN114959910A (en) * | 2021-02-23 | 2022-08-30 | 南通圣威斯特能源科技有限公司 | Efficient monocrystalline silicon solar cell texturing additive solution and application |
| CN114182356A (en) * | 2021-12-23 | 2022-03-15 | 江苏捷捷半导体新材料有限公司 | Low-reflectivity monocrystalline silicon wafer texturing additive, preparation method and application thereof |
| CN114678446A (en) * | 2022-03-25 | 2022-06-28 | 江苏润阳世纪光伏科技有限公司 | Low-cost contact passivation full-back electrode solar cell and preparation method thereof |
| CN114843368A (en) * | 2022-04-29 | 2022-08-02 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method and application thereof |
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