CN113241391A - PERC battery processing technology for reducing back surface field recombination loss - Google Patents
PERC battery processing technology for reducing back surface field recombination loss Download PDFInfo
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- CN113241391A CN113241391A CN202110471831.7A CN202110471831A CN113241391A CN 113241391 A CN113241391 A CN 113241391A CN 202110471831 A CN202110471831 A CN 202110471831A CN 113241391 A CN113241391 A CN 113241391A
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- 238000005215 recombination Methods 0.000 title claims abstract description 31
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 112
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 112
- 239000010703 silicon Substances 0.000 claims abstract description 112
- 239000003513 alkali Substances 0.000 claims abstract description 53
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000005498 polishing Methods 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 238000007650 screen-printing Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 11
- 238000002791 soaking Methods 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
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- 239000012670 alkaline solution Substances 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
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- 239000000969 carrier Substances 0.000 abstract description 10
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- 238000002679 ablation Methods 0.000 abstract description 5
- 238000000608 laser ablation Methods 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 239000004332 silver Substances 0.000 description 2
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 230000004580 weight loss Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention is suitable for the technical field of solar cell processing, and provides a PERC cell processing technology for reducing back surface field recombination loss, which comprises the steps of texturing, diffusing, etching, annealing, back surface deposition of a passivation film, front surface deposition of an antireflection film, back surface laser grooving, screen printing and sintering, and also comprises the following steps between the back surface laser grooving step and the screen printing step: and (3) performing alkali polishing on the back surface, polishing the back surface of the silicon wafer by using an alkali solution, and cleaning and drying the silicon wafer. According to the PERC battery processing technology for reducing the back surface field recombination loss, the back surface alkali polishing technology is added, the alkali solution can be used for removing the damage layer formed by ablation in the process of laser grooving of the back surface of the silicon wafer, and the recombination of the silicon wafer damage layer to current carriers is reduced, so that the back surface field recombination loss of the PERC battery is reduced, the open-circuit voltage and the short-circuit current of the PERC battery can be improved, and the conversion efficiency of the PERC battery manufactured by adopting the technology can be improved by 0.03-0.06%.
Description
Technical Field
The invention relates to the technical field of solar cell processing, in particular to a PERC cell processing technology for reducing back surface field recombination loss.
Background
With the development of crystalline silicon solar cell technology, the reliability of the crystalline silicon solar cell is more concerned. The PERC cell is taken as a mainstream product of the existing crystalline silicon solar cell, and due to the back passivation effect, the back recombination loss of the solar cell can be greatly reduced, the open-circuit voltage of the solar cell is improved, and the efficiency of the solar cell is obviously improved. At present, the manufacturing process of the PERC battery mainly comprises: the method comprises the steps of texturing, diffusing, etching, annealing, depositing a passivation film on the back, depositing an anti-reflection film on the front, laser grooving on the back, screen printing and sintering, and the conversion efficiency of the PERC cell must be continuously improved in order to improve the market competitiveness of the PERC cell.
In the prior art, in the process of processing a PERC battery, after the back and the front of a silicon wafer are coated with films, a passivation film on the back of the silicon wafer needs to be subjected to laser ablation grooving so as to realize the contact between silicon and aluminum during screen printing, and a silicon-aluminum alloy is formed during sintering to realize the conduction of current. In the process of ablating and grooving the silicon nitride and aluminum oxide passivation film on the back of the silicon wafer by laser, a damaged layer can be formed on the substrate of the silicon wafer, and the damaged layer on the silicon wafer is the recombination center of current carriers, so that the recombination of the current carriers can be easily caused, the loss of open-circuit voltage and short-circuit current can be caused, and the conversion efficiency of the battery can be reduced.
Disclosure of Invention
The invention provides a PERC battery processing technology for reducing back surface field recombination loss, and aims to solve the problem that in the prior art, a damaged layer is formed on a silicon wafer during back surface laser grooving in the PERC battery processing technology process, so that current carriers are easily compounded, and the battery conversion efficiency is reduced.
The invention is realized in this way, and provides a PERC battery processing technology for reducing back surface field recombination loss, which comprises the steps of texturing, diffusing, etching, annealing, back surface deposition of a passivation film, front surface deposition of an antireflection film, back surface laser grooving, screen printing and sintering, and is characterized in that the technology also comprises the following steps between the back surface laser grooving step and the screen printing step:
and (3) performing alkali polishing on the back surface, polishing the back surface of the silicon wafer by using an alkali solution, and cleaning and drying the silicon wafer.
Preferably, the polishing treatment of the back surface of the silicon wafer by using the alkali solution specifically comprises:
soaking the silicon wafer for 1-10 minutes by using an alkali solution with the mass concentration of 1.5-10.5% and the temperature of 50-85 ℃ to remove a damaged layer formed by laser grooving on the back of the silicon wafer and form a polished surface.
Preferably, the mass concentration of the alkali solution is 2%, the temperature of the alkali solution is 75 ℃, and the time for soaking the silicon wafer by the alkali solution is 2 minutes.
Preferably, the mass concentration of the alkali solution is 2.5%, the temperature of the alkali solution is 65 ℃, and the time for soaking the silicon wafer by the alkali solution is 3 minutes.
Preferably, the cleaning and drying of the silicon wafer specifically comprises:
the silicon wafer is cleaned by purified water for 1-3 times and is dried by compressed air at the temperature of 150-350 ℃ for 1-5 minutes.
Preferably, the number of times of cleaning the silicon wafer is 2, the temperature of the compressed air is 150 ℃, and the time for drying the silicon wafer by the compressed air is 2 minutes.
Preferably, the number of times of cleaning the silicon wafer is 2, the temperature of the compressed air is 300 ℃, and the time for drying the silicon wafer by the compressed air is 3 minutes.
Preferably, the alkali solution is a potassium hydroxide or sodium hydroxide solution.
Preferably, the step of depositing a passivation film on the back side specifically includes:
and depositing an aluminum oxide passivation film and a silicon nitride passivation film on the back of the silicon wafer in sequence.
Preferably, the front-side deposition antireflection film step specifically includes:
and depositing a silicon nitride anti-reflection film on the front surface of the silicon wafer.
According to the PERC battery processing technology for reducing the back surface field recombination loss, a back surface alkali polishing technology is added between a back surface laser grooving step and a screen printing step, the back surface of a silicon wafer is polished by using an alkali solution, the silicon wafer is cleaned and dried, a damage layer formed during laser ablation grooving of the back surface of the silicon wafer can be removed by using the alkali solution, a silicon layer with ordered atoms is exposed at the laser grooving position of the back surface of the silicon wafer, the recombination of the silicon wafer damage layer to current carriers can be reduced, the back surface field recombination loss of the PERC battery is reduced, the open-circuit voltage and the short-circuit current of the PERC battery can be improved, and the conversion efficiency of the PERC battery prepared by adopting the technology can be improved by 0.03-0.06%; and moreover, the damaged layer formed during the laser ablation grooving of the back surface of the silicon wafer is removed by adopting a back surface alkali polishing process, the process is simple, and the realization cost is low.
Drawings
Fig. 1 is a flow chart of a PERC battery processing process for reducing back surface field recombination loss according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
According to the PERC battery processing technology for reducing the back surface field recombination loss, provided by the embodiment of the invention, the back surface alkali polishing technology is added between the back surface laser grooving step and the screen printing step, the back surface of the silicon wafer is polished by using alkali solution, the silicon wafer is cleaned and dried, the alkali solution can be used for removing a damage layer formed by laser ablation on the back surface of the silicon wafer, so that a silicon layer with ordered atoms is exposed at the laser ablation grooving position on the back surface of the silicon wafer, the recombination of the silicon wafer damage layer on current carriers can be reduced, the back surface field recombination loss of the PERC battery is reduced, the open-circuit voltage and the short-circuit current of the PERC battery can be improved, and the conversion efficiency of the PERC battery prepared by adopting the technology can be improved by 0.03-0.06%.
Referring to fig. 1, an embodiment of the invention provides a PERC battery processing process for reducing back surface field recombination loss, including the following steps:
s1, texturing: selecting a P-type silicon wafer as a substrate material, and forming a suede on the surface of the silicon wafer by using a wet chemical method technology, wherein the weight reduction is controlled to be 0.4-0.8 g, and the reflectivity is controlled to be 9-15%;
s2, diffusion: forming a PN junction on the silicon wafer through a diffusion process;
s3, etching: polishing the back surface of the diffused silicon wafer by using an HF/HNO3 solution and removing PSG, wherein the etching weight loss is controlled to be 0.2-0.35 g, and the reflectivity is controlled to be 20-30%;
s4, annealing: annealing the silicon wafer by using thermal oxygen, controlling the temperature at 500-800 ℃ to form a layer of compact silicon dioxide film on the back of the silicon wafer so as to effectively prevent the recombination of current carriers on the surface;
s5, depositing a passivation film on the back;
in this embodiment, the passivation film includes an aluminum oxide passivation film and a silicon nitride passivation film. In this step, the step of depositing a passivation film on the back surface specifically includes:
and depositing an aluminum oxide passivation film and a silicon nitride passivation film on the back of the silicon wafer in sequence to reduce the back recombination of the silicon wafer.
S6, depositing an antireflection film on the front surface;
in this embodiment, the antireflective film is specifically a silicon nitride antireflective film. In this step, the front-side deposition antireflection film step specifically includes: and depositing a silicon nitride anti-reflection film on the front surface of the silicon wafer. Specifically, a silicon nitride anti-reflection film is deposited by a PECVD method. Wherein, the thickness of the silicon nitride anti-reflection film is controlled to be 65-85nm, and the refractive index is controlled to be 2-2.5, so as to reduce the reflectivity.
S7, back laser grooving: performing laser ablation grooving on the passivation film on the back of the silicon wafer to ensure that the back aluminum slurry forms good ohmic contact with the silicon wafer when being sintered;
specifically, laser ablation grooving is carried out on a silicon nitride passivation film and an aluminum oxide passivation film on the back of a silicon wafer by using laser grooving equipment so as to expose a silicon wafer substrate.
S8, back side alkali polishing: polishing the back of the silicon wafer by using an alkali solution, and cleaning and drying the silicon wafer;
in the step, after the back laser grooving, a back alkali polishing process is added, silicon in a damage layer formed by laser ablation grooving of the back of the silicon wafer is corroded by using strong alkali, the damage layer formed by laser ablation grooving of the back can be removed, the silicon layer with ordered atoms is exposed, and then back aluminum slurry is printed and sintered, so that the composition of the damage layer of the silicon wafer to current carriers can be reduced, the open-circuit voltage and the short-circuit current of the PERC battery are improved, and the conversion efficiency of the battery can be improved by 0.03-0.06%.
As an embodiment of the present invention, the alkali solution is a potassium hydroxide or sodium hydroxide solution. As a preferred embodiment of the present invention, the mass concentration of the alkali solution is 1.5% to 10.5%.
As an embodiment of the present invention, the polishing treatment of the back surface of the silicon wafer by using the alkali solution specifically includes:
soaking the silicon wafer for 1-10 minutes by using an alkali solution with the mass concentration of 1.5-10.5% and the temperature of 50-85 ℃ to remove an ablation damage layer in a laser ablation groove on the back of the silicon wafer to form a polished surface, so that the damage layer formed by ablation of the laser grooving on the back is removed, an atomic ordered silicon layer is exposed, the recombination of the silicon wafer damage layer to current carriers is reduced, and the back field recombination loss of the PERC cell is reduced.
As an embodiment of the invention, the mass concentration of the alkali solution is 2%, the temperature of the alkali solution is 75 ℃, and the time for soaking the silicon wafer by the alkali solution is 2 minutes.
In this example, after laser grooving the back surface of the silicon wafer, the silicon wafer was immersed in a 2% by mass potassium hydroxide solution at 75 ℃ for 2 minutes to remove the ablation damage layer in the laser ablation groove, thereby forming a polished surface.
As another embodiment of the invention, the mass concentration of the alkali solution is 2.5%, the temperature of the alkali solution is 65 ℃, and the time for soaking the silicon wafer by the alkali solution is 3 minutes.
In this embodiment, after the laser grooving is performed on the back surface of the silicon wafer, the silicon wafer is soaked in a sodium hydroxide solution with a mass concentration of 2.5% at a temperature of 65 ℃ for 3 minutes, so that the effect of removing the ablation damage layer in the laser ablation groove can be further improved.
As an embodiment of the present invention, the silicon wafer cleaning and drying specifically includes:
cleaning the silicon wafer 1-3 times by using purified water, and drying the silicon wafer for 1-5 minutes by using compressed air at the temperature of 150-.
As another embodiment of the invention, the number of times of cleaning the silicon wafer is 2, the temperature of the compressed air is 150 ℃, and the time of drying the silicon wafer by the compressed air is 2 minutes, so that the alkaline solution remained on the surface of the silicon wafer can be well removed, and the silicon wafer is kept dry.
As an optional embodiment of the invention, the number of times of cleaning the silicon wafer is 2, the temperature of the compressed air is 300 ℃, and the time of drying the silicon wafer by the compressed air is 3 minutes.
In this example, the silicon wafer was washed with pure water 2 times to remove the alkali solution remaining on the surface of the silicon wafer, and then dried with compressed air heated to 300 ℃ for 3 minutes.
As a preferred embodiment of the present invention, after laser grooving is performed on the back surface of the silicon wafer, soaking the silicon wafer for 2 minutes by using a potassium hydroxide solution with a mass concentration of 2% and a temperature of 75 ℃ to remove a damaged layer in the laser ablation groove and form a polished surface; and cleaning the silicon wafer for 2 times by using purified water, removing the alkali solution remained on the surface of the silicon wafer, and drying the silicon wafer for 2 minutes by using compressed air heated to 150 ℃ so as to completely dry the silicon wafer, so that the alkali polishing of the back surface of the silicon wafer can be quickly realized, the processing efficiency is improved, and the cost of the back surface alkali polishing process is favorably reduced.
S9, screen printing: printing an aluminum back field at the position of the groove on the back of the silicon wafer by using back aluminum paste, printing a back electrode on the aluminum back field by using silver paste, and printing a front electrode on the front of the silicon wafer by using silver paste;
s10, sintering: and drying and sintering the silicon wafer to obtain a battery finished product.
According to the PERC battery processing technology for reducing the back surface field recombination loss, a back surface alkali polishing technology is added between a back surface laser grooving step and a screen printing step, the back surface of a silicon wafer is polished by using an alkali solution, the silicon wafer is cleaned and dried, a damage layer formed during laser ablation grooving of the back surface of the silicon wafer can be removed by using the alkali solution, a silicon layer with ordered atoms is exposed at the laser grooving position of the back surface of the silicon wafer, the recombination of the silicon wafer damage layer to current carriers can be reduced, the back surface field recombination loss of the PERC battery is reduced, the open-circuit voltage and the short-circuit current of the PERC battery can be improved, and the conversion efficiency of the PERC battery prepared by adopting the technology can be improved by 0.03-0.06%; and moreover, the damaged layer formed during the laser ablation grooving of the back surface of the silicon wafer is removed by adopting a back surface alkali polishing process, the process is simple, and the realization cost is low.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The PERC battery processing technology for reducing back surface field recombination loss comprises the steps of texturing, diffusion, etching, annealing, back surface deposition of a passivation film, front surface deposition of an antireflection film, back surface laser grooving, screen printing and sintering, and is characterized by further comprising the following steps between the back surface laser grooving step and the screen printing step:
and (3) performing alkali polishing on the back surface, polishing the back surface of the silicon wafer by using an alkali solution, and cleaning and drying the silicon wafer.
2. The PERC cell processing process of claim 1, wherein said polishing the back surface of the silicon wafer with said alkaline solution comprises:
soaking the silicon wafer for 1-10 minutes by using an alkali solution with the mass concentration of 1.5-10.5% and the temperature of 50-85 ℃ to remove a damaged layer formed by laser grooving on the back of the silicon wafer and form a polished surface.
3. The process for manufacturing the PERC battery with reduced back surface field recombination loss according to claim 2, wherein the mass concentration of the alkali solution is 2%, the temperature of the alkali solution is 75 ℃, and the time for soaking the silicon wafer by the alkali solution is 2 minutes.
4. The process for manufacturing the PERC battery with reduced back surface field recombination loss according to claim 2, wherein the mass concentration of the alkali solution is 2.5%, the temperature of the alkali solution is 65 ℃, and the time for soaking the silicon wafer by the alkali solution is 3 minutes.
5. The PERC battery processing technology for reducing back surface field recombination loss as claimed in claim 1, wherein the cleaning and drying of the silicon wafer specifically comprises:
the silicon wafer is cleaned by purified water for 1-3 times and is dried by compressed air at the temperature of 150-350 ℃ for 1-5 minutes.
6. The process of claim 5, wherein the number of times the silicon wafer is cleaned is 2, the temperature of the compressed air is 150 ℃, and the time for drying the silicon wafer by the compressed air is 2 minutes.
7. The process for manufacturing the PERC battery with reduced back surface field recombination loss according to claim 5, wherein the silicon wafer is cleaned 2 times, the temperature of the compressed air is 300 ℃, and the time for drying the silicon wafer by the compressed air is 3 minutes.
8. The process of claim 1, wherein the alkaline solution is potassium hydroxide or sodium hydroxide solution.
9. The process of claim 1, wherein the step of depositing a passivation film on the back surface comprises:
and depositing an aluminum oxide passivation film and a silicon nitride passivation film on the back of the silicon wafer in sequence.
10. The process of claim 1, wherein the step of depositing the antireflective film on the front surface comprises:
and depositing a silicon nitride anti-reflection film on the front surface of the silicon wafer.
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| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
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| CN110416323A (en) * | 2019-07-10 | 2019-11-05 | 天津爱旭太阳能科技有限公司 | A kind of back metal contact zone has the PERC battery and preparation method thereof of passivation layer |
| CN111129221A (en) * | 2019-12-24 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Alkaline polishing preparation method of PERC solar cell |
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| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
| CN115890021B (en) * | 2023-01-05 | 2023-05-16 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
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Application publication date: 20210810 |