CN109065667B - Method for etching solar SE double-sided PERC battery by inorganic alkali - Google Patents
Method for etching solar SE double-sided PERC battery by inorganic alkali Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 61
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 60
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 60
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 60
- 239000003513 alkali Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 13
- 238000002310 reflectometry Methods 0.000 claims abstract description 12
- 238000005406 washing Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 17
- 239000000243 solution Substances 0.000 claims description 17
- 238000005554 pickling Methods 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 7
- 230000004580 weight loss Effects 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 150000007529 inorganic bases Chemical class 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 4
- 239000013585 weight reducing agent Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 210000002268 wool Anatomy 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for etching a solar SE double-sided PERC cell by using inorganic alkali; after the SE double-sided PERC battery is subjected to chain PSG removal, groove type alkali etching, water washing, drying and blanking in sequence, the etching weight reduction amount of the SE double-sided PERC battery is controlled to be 0.9-1.8% of the original weight of the SE double-sided PERC battery, a pyramid structure is formed on the back of the SE double-sided PERC battery, and the reflectivity is controlled to be 10-20%. The alkali etching can reduce the usage amount of HF/HNO3 in a limited way, reduce the environmental management cost and reduce the chemical manufacturing cost, the reflectivity of the back of the alkali etching is higher than that of the acid etching, so that the etching weight reduction amount of the SE double-sided PERC battery is controlled to be 0.9-1.8% of the original weight of the SE double-sided PERC battery, the back of the SE double-sided PERC battery forms a pyramid structure, and the reflectivity is controlled to be 10-20%, the conversion efficiency of the SE double-sided PERC battery can be effectively improved, the practicability is high, and the alkali etching is very worthy of popularization.
Description
Technical Field
The invention relates to the technical field of SE double-sided PERC battery etching, in particular to a method for etching a solar SE double-sided PERC battery by using inorganic alkali.
Background
The conventional single-crystal and polycrystalline SE cell production process comprises the following steps: the method comprises the steps of texturing, diffusion, SE (selective electron transport) -acid etching, annealing, SiNx film coating, screen printing, sintering, sorting and detecting, wherein the diffusion is carried out in a back-to-back mode by adopting two silicon wafers, the front surfaces (diffusion surfaces) of the silicon wafers are doped to form P-N junctions, phosphorus is inevitably diffused on the back surfaces and the side edges, photo-generated electrons collected on the front surfaces can flow to the back surfaces along areas with phosphorus on the edges, and short circuit is caused. The side and back phosphorosilicate glass is removed by using HF/HNO3 solution in wet acid etching, short circuit is avoided, but the reflectivity of the back is higher by using acid solution etching compared with that of alkali etching, so that the conversion efficiency of the back of the SE double-sided PERC battery piece is higher than that of alkali etching, and meanwhile, the use amount of HF/HNO3 can be effectively reduced by using alkali etching, and the environmental management cost is reduced.
The invention aims to reduce the back reflectivity of the SE double-sided PERC battery piece and increase the back conversion efficiency of the SE double-sided PERC battery piece; the chemical cost is reduced; and simultaneously, the environmental management cost is reduced.
Disclosure of Invention
The invention aims to provide a method for etching a solar SE double-sided PERC cell by using inorganic alkali, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for etching a solar SE double-sided PERC cell by using inorganic alkali;
after sequentially performing chain PSG removal, groove type alkali etching, water washing, drying and blanking on the SE double-sided PERC battery, controlling the etching weight loss of the SE double-sided PERC battery to be 0.9-1.8% of the original weight of the SE double-sided PERC battery, forming a pyramid structure on the back of the SE double-sided PERC battery, and controlling the reflectivity to be 10-20%;
the method comprises the specific steps of removing PSG in a chained mode, removing phosphorosilicate glass on the back surface of an SE double-sided PERC battery through the chained PSG, and placing the SE double-sided PERC battery into a groove for removing the phosphorosilicate glass on the back surface;
the liquid preparation ratio in the groove for removing the phosphorus-silicon glass on the back surface is HF: DI water 1:9, belt speed 1.2-2.5 m/min;
the groove type alkali etching comprises the following specific steps of sequentially carrying out alkali etching, first acid pickling and second acid pickling on the SE battery subjected to chain PSG removal;
wherein, the liquid preparation ratio in the alkali etching groove is KOH: additive: setting the DI water to be 1:4:90, setting the etching temperature to be 70-75 ℃ and setting the etching time to be 170-230 s;
the proportioning of the prepared solution in the first pickling tank is HCL: H2O2, namely DI water is 1:0.65:16, the acid washing temperature is set to be 50-60 ℃, and the time is 130-180 s;
the proportion of the prepared solution in the second pickling tank is HF to DI water is 1:37, the pickling temperature is set to be 20-30 ℃, and the pickling time is 80-120 s.
Preferably, the additive in the alkali etching groove is a mixed solution of isopropanol, sodium silicate, a small amount of surfactant and water.
Preferably, the KOH in the alkali etching tank can be replaced by NaOH.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the phosphorosilicate glass on the back of the SE double-sided PERC battery is firstly removed by adopting a liquid-carrying roller with HF solution, then the silicon wafer is completely soaked in KOH or NaOH tank liquid for etching, the back of the crystalline silicon solar SE double-sided PERC battery is etched by adopting inorganic alkali liquid instead of traditional acid liquid, the back of the crystalline silicon solar SE double-sided PERC battery reacts with KOH or NaOH, and meanwhile, the front (diffusion surface) of the silicon wafer is protected by the phosphorosilicate glass, so that the front is not damaged by the alkali liquid.
The alkali etching can reduce the usage amount of HF/HNO3 in a limited way, reduce the environmental management cost and reduce the chemical manufacturing cost, the reflectivity of the back of the alkali etching is higher than that of the acid etching, so that the etching weight reduction amount of the SE double-sided PERC battery is controlled to be 0.9-1.8% of the original weight of the SE double-sided PERC battery, the back of the SE double-sided PERC battery forms a pyramid structure, and the reflectivity is controlled to be 10-20%, the conversion efficiency of the SE double-sided PERC battery can be effectively improved, the practicability is high, and the alkali etching is very worthy of popularization.
Drawings
FIG. 1 is a schematic flow chart of the method of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a technical solution:
a method for using inorganic alkali etching for a solar SE double-sided PERC battery is characterized in that after the SE double-sided PERC battery is subjected to chain PSG removal, groove type alkali etching, water washing and drying blanking in sequence, the etching weight reduction amount of the SE double-sided PERC battery is controlled to be 0.9% -1.8% of the original weight of the SE double-sided PERC battery, a pyramid structure is formed on the back of the SE double-sided PERC battery, and the reflectivity is controlled to be 10% -20%.
Firstly, the thickness of the phosphorosilicate glass of the diffusion surface is increased by using a diffusion process, then SE laser doping is carried out, the phosphorosilicate glass on the back surface and the side surface of the SE double-sided PERC battery can be effectively removed by dipping a chain type PSG machine table roller into an HF solution, meanwhile, the phosphorosilicate glass on the front surface is not influenced by the HF solution, then the SE double-sided PERC battery is placed in a KOH or NaOH solution matched with an additive, although the entire SE dual-sided PERC cell was immersed in an alkaline etched bath of KOH or NaOH solution with additives, the SE double-sided PERC cell was placed in a flower basket, but due to the "protection" of the phosphosilicate glass at the diffusion side, can only carry out alkali etching on the back surface of the SE double-sided PERC battery without influencing the front surface (diffusion surface), as the SE pattern is slightly damaged by laser doping to the phosphorosilicate glass in the laser pattern area, special alkali etching and alkali polishing additives are needed to be used for further protecting the diffusion surface of the SE double-sided PERC battery from being damaged by alkali liquor.
Removing PSG in a chained manner: removing the phosphorus-silicon glass groove on the back: preparing HF in the initial preparation liquid: the DI was mixed at a ratio of 1:9, and the belt speed was 2.0 m/min.
After the solution preparation according to the chain type PSG removing formula is finished, the SE double-sided PERC battery is fed to a PSG removing machine, and is subjected to back side phosphorosilicate glass removing, washing and drying, and then discharging, so that the phosphorosilicate glass on the back side of the SE double-sided PERC battery is completely corroded, and the phosphorosilicate glass on the diffusion side is not influenced.
Groove type alkali etching: preparing a primary preparation solution, and performing alkali etching on KOH or NaOH in a groove: additive: DI water was measured as 1:4:90, setting the temperature at 75 ℃, allowing the wool making time to be 220s, and allowing the additive in the alkali etching tank to be a mixed solution of isopropanol, sodium silicate, a small amount of surfactant and water;
HCL in the first pickling tank: mixing H2O2 and DI according to the ratio of 1:0.65:16, setting the temperature at 60 ℃, and making wool for 140 s;
and (3) preparing a solution from HF and DI in a second pickling tank according to the ratio of 1:37, setting the temperature at 28 ℃, and making the wool for 120 s.
After the solution preparation according to the alkali etching formula is finished, 50 SE double-sided PERC batteries are selected, the size of the SE double-sided PERC battery is 156.75 × 156.75, the weight of the SE double-sided PERC battery with the size of 156.75 × 156.75 is 11g, the 50 SE double-sided PERC batteries subjected to PSG are subjected to alkali etching, acid washing, water washing and drying, and then subjected to blanking, and the alkali etching weight loss and the data of the back surface reflectivity of the 50 SE double-sided PERC batteries are shown in the following table 1:
| number of SE silicon wafers | 8 | 17 | 15 | 10 |
| Etching to reduce weight | 0.12 | 0.15 | 0.19 | 0.20 |
| Back side reflectance | 12.24％ | 13.68％ | 16.33％ | 18.45％ |
The data in the table 1 can be obtained, the weight loss of the SE battery in the etching weight loss process is well controlled to be 0.12-0.20g by the method, the weight loss of the SE battery in the etching weight loss process is 0.9-1.8% by inorganic alkali etching, the reflectivity of the back surface of the SE double-sided PERC battery after alkali polishing can reach 10-20%, and the effect of the SE double-sided PERC battery can be well improved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (3)
1. A method for etching a solar SE double-sided PERC battery by using inorganic alkali is characterized by comprising the following steps:
after sequentially performing chain PSG removal, groove type alkali etching, water washing, drying and blanking on the SE double-sided PERC battery, controlling the etching weight loss of the SE double-sided PERC battery to be 0.9-1.8% of the original weight of the SE double-sided PERC battery, forming a pyramid structure on the back of the SE double-sided PERC battery, and controlling the reflectivity to be 10-20%;
the method comprises the specific steps of removing PSG in a chained mode, removing phosphorosilicate glass on the back surface of an SE double-sided PERC battery through the chained PSG, and placing the SE double-sided PERC battery into a groove for removing the phosphorosilicate glass on the back surface;
the liquid preparation ratio in the groove for removing the phosphorus-silicon glass on the back surface is HF: DI water 1:9, belt speed 1.2-2.5 m/min;
the groove type alkali etching comprises the following specific steps of sequentially carrying out alkali etching, first acid pickling and second acid pickling on the SE battery subjected to chain PSG removal;
wherein, the liquid preparation ratio in the alkali etching groove is KOH: additive: setting the DI water to be 1:4:90, setting the etching temperature to be 70-75 ℃ and setting the etching time to be 170-230 s;
the proportioning of the prepared solution in the first pickling tank is HCL: H2O2, namely DI water is 1:0.65:16, the acid washing temperature is set to be 50-60 ℃, and the time is 130-180 s;
the proportion of the prepared solution in the second pickling tank is HF to DI water is 1:37, the pickling temperature is set to be 20-30 ℃, and the pickling time is 80-120 s.
2. The method of claim 1, wherein the inorganic base etching is used for a solar SE double sided PERC cell, and the method comprises the following steps: the additive in the alkali etching groove is a mixed solution of isopropanol, sodium silicate, a small amount of surfactant and water.
3. The method of claim 1, wherein the inorganic base etching is used for a solar SE double sided PERC cell, and the method comprises the following steps: the KOH in the alkaline etch bath can be replaced with NaOH.
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| CN109888061B (en) * | 2019-03-22 | 2023-09-26 | 通威太阳能（安徽）有限公司 | Alkali polishing efficient PERC battery and preparation process thereof |
| CN109979862A (en) * | 2019-04-22 | 2019-07-05 | 通威太阳能（成都）有限公司 | A kind of etching groove for promoting two-sided PERC battery appearance yield and reducing acid consumption |
| CN110518088B (en) * | 2019-07-18 | 2022-04-12 | 天津爱旭太阳能科技有限公司 | Preparation method of SE solar cell |
| CN110473938A (en) * | 2019-08-08 | 2019-11-19 | 山西潞安太阳能科技有限责任公司 | A kind of novel alkali throwing selective emitter making technology |
| CN110752271A (en) * | 2019-09-26 | 2020-02-04 | 无锡琨圣科技有限公司 | Processing method of PERC battery |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
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| CN104659156B (en) * | 2015-03-03 | 2017-05-17 | 中节能太阳能科技（镇江）有限公司 | Etching method of single crystalline silicon solar cell |
| CN108630786A (en) * | 2016-06-27 | 2018-10-09 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of crystal silicon solar energy battery suede structure |
| CN106449876B (en) * | 2016-10-17 | 2017-11-10 | 无锡尚德太阳能电力有限公司 | The preparation method of the two-sided PERC crystal silicon solar energy batteries of selective emitter |
| CN107221568A (en) * | 2017-07-10 | 2017-09-29 | 苏州腾晖光伏技术有限公司 | A kind of preparation method of the selection two-sided PERC batteries of emitter stage |
| CN107338480A (en) * | 2017-08-24 | 2017-11-10 | 嘉兴尚能光伏材料科技有限公司 | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive |
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