CN115820256B - Additive for improving suede uniformity of solar cell and application process thereof - Google Patents

Additive for improving suede uniformity of solar cell and application process thereof Download PDF

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Publication number
CN115820256B
CN115820256B CN202211492208.0A CN202211492208A CN115820256B CN 115820256 B CN115820256 B CN 115820256B CN 202211492208 A CN202211492208 A CN 202211492208A CN 115820256 B CN115820256 B CN 115820256B
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silicon wafer
texturing
additive
agent
sodium
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CN115820256A (en
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王涛
周浩
彭丽
韩军
陈魏
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Jiaxing Xiaochen Photovoltaic Technology Co ltd
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Jiaxing Xiaochen Photovoltaic Technology Co ltd
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Abstract

The invention discloses an additive for improving the suede uniformity of a solar cell and a use process thereof, wherein the additive comprises the following components: 1-2% of defoamer, 0.5-1% of nucleating agent, 0.1-0.5% of dispersing agent, 0.5-1% of chelating agent, 0.1-0.5% of film forming agent and the balance of deionized water. The application process comprises the steps of preparing a silicon wafer texturing additive; preparing silicon wafer texturing solution; and (5) texturing. The defoaming agent can reduce surface interfacial tension, and quickly eliminate bubbles generated by hydrogen generated by the reaction of the silicon wafer and sodium hydroxide, so that sodium hydroxide solution and the silicon wafer can react more quickly and uniformly, thereby improving the uniformity of the texture after texturing and improving the conversion efficiency of the solar cell.

Description

Additive for improving suede uniformity of solar cell and application process thereof
Technical Field
The invention belongs to the technical field of solar cell preparation processes, and particularly relates to an additive for improving the suede uniformity of a solar cell and a use process thereof.
Background
The silicon wafer is used as one of basic materials for preparing solar cells, the photoelectric conversion efficiency of the finished solar cells is directly or indirectly influenced by the absorption of the surface of the silicon wafer to sunlight, a silicon wafer with a smoother surface is formed after a certain processing procedure, and the surface of the silicon wafer is required to be textured before the solar cells are manufactured, so that the roughness is increased, the absorption of the sunlight is greatly improved, and the higher conversion efficiency in unit area is achieved. The post-manufacturing procedure of the solar cell is required to be matched in the texturing process, but the post-manufacturing procedure of each cell manufacturer has slight difference on the requirements of the texturing, the texturing forms of the prior additive after texturing are different, the post-manufacturing procedure of each cell manufacturer cannot be well matched, and the problem of lower suitability exists.
Disclosure of Invention
The invention aims to provide the additive for improving the texture uniformity of the solar cell, when the silicon wafer is textured, the texture additive is added into the texture groove, so that the texture after the texture is more uniform and stereoscopic, the sunlight absorption is effectively improved, and meanwhile, the texture uniformity is good, and the additive can be matched with the subsequent processes of more cell manufacturers.
In order to achieve the above purpose, the invention adopts the following technical scheme: the additive for improving the suede uniformity of the solar cell comprises the following components in percentage by weight:
Defoaming agent 1-2%
0.5 To 1 percent of nucleating agent
0.1 To 0.5 percent of dispersing agent
Chelating agent 0.5-1%
0.1 To 0.5 percent of film forming agent
The balance of deionized water.
As a preferable mode of the above technical scheme, the defoaming agent is one or a combination of more of diethylene glycol monobutyl ether, methanol, modified silicone oil ether and cellulose ether.
As the preferable selection of the technical scheme, the nucleating agent is one or a combination of more of petroleum ether, nonionic fluorocarbon polymer, cetostearyl alcohol polyether-25 and tea saponin.
As a preference of the above technical scheme, the dispersing agent is one or a combination of a plurality of low molecular weight polyacrylate, trisodium phosphate, aA-AM copolymer sodium salt and AA/MAA copolymer sodium salt.
Preferably, the chelating agent is one or a combination of more of sodium oxalate, disodium ethylenediamine tetraacetate, sodium citrate, sodium acetate and sodium pyrophosphate.
As the preferable mode of the technical scheme, the film forming agent is one or a combination of more of polyethylene glycol-400, polyethylene glycol-600, polyvinyl alcohol, polyethylene oxide and sodium polyacrylate.
The application process of the additive for improving the suede uniformity of the solar cell comprises the following steps of:
1) Preparing a silicon wafer texturing additive: adding 1-2% of defoamer, 0.5-1% of nucleating agent, 0.1-0.5% of dispersing agent, 0.5-1% of chelating agent and 0.1-0.5% of film forming agent into deionized water, and uniformly mixing to obtain a silicon wafer texturing additive;
2) Preparing silicon wafer texturing liquid: adding the silicon wafer texturing additive prepared in the step 1) into 0.7-1.2% sodium hydroxide solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare silicon wafer texturing solution;
3) And (3) putting the silicon wafer into the silicon wafer texturing solution prepared in the step (2) for texturing, and performing texturing for 300-480s at 78-84 ℃.
The beneficial effects of the invention are as follows:
(1) The defoaming agent can reduce surface interfacial tension, and quickly eliminate bubbles generated by hydrogen generated by the reaction of the silicon wafer and sodium hydroxide, so that a sodium hydroxide solution and the silicon wafer can react more quickly and uniformly, and the uniformity of the texture after texturing is improved.
(2) The hydrophobic segment of the nucleating agent is attached to the surface of the silicon wafer in the solution, so that the silicon wafer is prevented from reacting with hydroxyl, and the surface of the silicon wafer, to which the nucleating agent is not attached, reacts with hydroxyl, so that the reaction rate difference is increased, which is equivalent to the increase of the anisotropy of the original monocrystalline silicon wafer, and the silicon wafer can form a suede faster when reacting with a sodium hydroxide solution.
(3) The chelating agent disclosed by the invention can be used for effectively chelating the reaction solution and metal ion impurities brought in the silicon wafer processing, and is helpful for the subsequent silicon wafer cleaning.
(4) The film forming agent is easy to adsorb on the surface of a silicon wafer to form a structure similar to a filter screen, so that the nucleating agent is effectively prevented from agglomerating and adsorbing on the surface of the silicon wafer, the nucleating agent is adsorbed more uniformly on the surface of the silicon wafer, and the suede prepared by the reaction is more uniform and three-dimensional.
(5) After the texturing additive is used, the obtained textured surface is more uniform, small broken textured surfaces are avoided, the cleaning is easy, different subsequent process requirements can be matched, and the conversion efficiency of the solar cell is improved by 0.02-0.05%.
Drawings
FIG. 1 is a SEM image of a pile face after the production line of the pile additive;
fig. 2 is a SEM image of a pile after being pile using the pile additive of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Examples
1. Preparing the wool making additive
Adding 1% of methanol, 0.5% of cellulose ether, 0.5% of petroleum ether, 0.3% of tea saponin, 0.2% of AA/MAA copolymer sodium salt, 1% of sodium citrate, 0.2% of polyethylene glycol-400 and 0.3% of sodium polyacrylate into deionized water, and uniformly mixing to obtain the silicon slice texturing additive.
2. Monocrystalline silicon texturing
Adding 320L of deionized water into a texturing tank, heating to 80 ℃, keeping the temperature constant, adding 5L of sodium hydroxide solution (48% of solid content) and 1.8L of the texturing additive prepared in the step 1, starting circulation bubbling, uniformly mixing, putting the silicon wafer subjected to the pre-cleaning into the texturing tank for reaction for 400 seconds by taking 400pcs as a batch, taking out the silicon wafer after the reaction is finished, performing the subsequent procedures of cleaning, drying and the like, adding 500mL of alkali solution, 120mL of the texturing additive and 10000mL of deionized water after each texturing reaction is carried out for 1 batch, and thus, circularly supplementing the solution to finish the cleaning of each batch of silicon wafer.
Comparative example 1
Adding 320L of deionized water into a texturing tank, heating to 80 ℃, keeping the temperature constant, adding 5L of sodium hydroxide solution (48% of solid content) and 1.8L of original texturing additive (K02 (T30D) produced by Jiaxing, small time V technology Co., ltd.), starting circulation bubbling, uniformly mixing, putting the silicon wafer subjected to pre-cleaning into the texturing tank with 400pcs as one batch for reaction 400s, taking out the silicon wafer after the reaction is finished, performing subsequent processes such as cleaning, drying and the like, adding 500mL of alkali solution, 120mL of texturing additive and 10000mL of deionized water after each texturing reaction is 1 batch, and thus, circularly supplementing the liquid to finish cleaning each batch of silicon wafer.
The monocrystalline silicon wafers after the texturing of the example 1 and the comparative example 1 were respectively subjected to scanning electron microscope analysis, and the scanning electron microscope plan views are respectively shown in fig. 1 and 2. As can be seen from the comparison of the accompanying drawings 1 and 2 in the specification, the monocrystalline silicon wafer obtained by adopting the texturing additive and the application process thereof has more uniform texturing. The surface of the monocrystalline silicon wafer prepared by adopting the original wool making additive in the early stage of the applicant has different pyramid suedes, and the large-size pyramid and the small-size pyramid have obvious zoning phenomenon.
And counting the size distribution condition of the pyramid in the specific area, wherein the size distribution statistics of the pyramid are shown in the following table:
Size of the device 0.3-0.6 0.6-0.9 0.9-1.2 1.2-1.5 1.5-1.8 1.8-2.1 2.1-2.4 2.4-2.7
Example 1 contains number of 0 63 265 258 199 33 9 0
Comparative example 1 contains the number 0 89 254 241 148 61 30 4
The monocrystalline silicon wafers after the texturing of the embodiment 1 and the comparative embodiment 1 are respectively processed into battery pieces by adopting the same subsequent processing technology, photoelectric performance tests are respectively carried out, the photoelectric performance of the battery pieces corresponding to the embodiment 1 is compared with the photoelectric performance of the battery pieces corresponding to the comparative embodiment 1, and the results are shown in the following table:
Efficiency difference Eta Voc Isc FF
Example 1 comparative example 1 0.034 0.000 0.007 0.07
From the table, the energy conversion efficiency (Eta), the short-circuit current (Isc) and the Filling Factor (FF) of the battery piece prepared by the additive for improving the texture uniformity of the solar battery and the application process of the additive are obviously improved. This is because a more uniform pile makes the diffusion, deposition process more uniform across the pile, and better contact of the paste to the pile for the printing process, thus improving short circuit current (Isc), fill Factor (FF).
It should be noted that technical features such as a scanning electron microscope related to the present application should be considered as the prior art, and specific structures, working principles, and control modes and spatial arrangement modes possibly related to the technical features should be selected conventionally in the art, and should not be considered as the point of the present application, which is not further specifically expanded and detailed.
While the preferred embodiments of the present invention have been described in detail, it should be appreciated that numerous modifications and variations may be made in accordance with the principles of the present invention by those skilled in the art without undue burden, and thus, all technical solutions which may be obtained by logic analysis, reasoning or limited experimentation based on the principles of the present invention as defined by the claims are within the scope of protection as defined by the present invention.

Claims (1)

1. The application process of the additive for improving the suede uniformity of the solar cell is characterized by comprising the following steps of:
1) Preparing a silicon wafer texturing additive: adding 1-2% of defoamer, 0.5-1% of nucleating agent, 0.1-0.5% of dispersing agent, 0.5-1% of chelating agent and 0.1-0.5% of film forming agent into deionized water, and uniformly mixing to obtain a silicon wafer texturing additive;
2) Preparing silicon wafer texturing liquid: adding the silicon wafer texturing additive prepared in the step 1) into 0.7-1.2% sodium hydroxide solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare silicon wafer texturing solution;
3) Putting the silicon wafer into the silicon wafer texturing solution prepared in the step 2) for texturing, and texturing for 300-480s at 78-84 ℃;
The defoaming agent is one or a combination of more of diethylene glycol monobutyl ether, methanol, modified silicone oil ether and cellulose ether;
The nucleating agent is one or a combination of more of petroleum ether, nonionic fluorocarbon polymer, cetostearyl alcohol polyether-25 and tea saponin;
The dispersing agent is one or a combination of a plurality of low molecular weight polyacrylate, trisodium phosphate, aA-AM copolymer sodium salt and AA/MAA copolymer sodium salt;
The chelating agent is one or a combination of more of sodium oxalate, disodium ethylenediamine tetraacetate, sodium citrate, sodium acetate and sodium pyrophosphate;
The film forming agent is one or a combination of more of polyethylene glycol-400, polyethylene glycol-600, polyvinyl alcohol, polyethylene oxide and sodium polyacrylate.
CN202211492208.0A 2022-11-25 2022-11-25 Additive for improving suede uniformity of solar cell and application process thereof Active CN115820256B (en)

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CN110396725A (en) * 2019-07-10 2019-11-01 天津爱旭太阳能科技有限公司 A kind of flocking additive and its application of monocrystalline silicon piece
CN111394797A (en) * 2020-05-25 2020-07-10 彭晓晨 Preparation method of additive with positive pyramid structure for N-type monocrystalline silicon
CN112813502A (en) * 2020-12-30 2021-05-18 常州高特新材料股份有限公司 Monocrystalline silicon etching texturing additive and application thereof
CN112877784A (en) * 2019-12-24 2021-06-01 武汉宜田科技发展有限公司 Additive for silicon wafer texturing by alkali liquor
CN113668066A (en) * 2021-08-19 2021-11-19 常州时创能源股份有限公司 Texturing additive for rapid texturing and application
CN114182356A (en) * 2021-12-23 2022-03-15 江苏捷捷半导体新材料有限公司 Low-reflectivity monocrystalline silicon wafer texturing additive, preparation method and application thereof
CN114351257A (en) * 2021-12-15 2022-04-15 嘉兴市小辰光伏科技有限公司 Additive for rapid texturing of HIT solar cell and texturing process
CN114921251A (en) * 2022-06-01 2022-08-19 松山湖材料实验室 Crystalline silicon texturing additive, crystalline silicon texturing agent and preparation method of crystalline silicon inverted pyramid textured structure

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102479698A (en) * 2010-11-24 2012-05-30 气体产品与化学公司 Compositions and methods for texturing of silicon wafers
WO2014192266A1 (en) * 2013-05-31 2014-12-04 日立化成株式会社 Etching composition
CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN104651949A (en) * 2015-02-11 2015-05-27 常州君合科技股份有限公司 Multi-crystalline silicon wafer texturization additive
CN106222756A (en) * 2016-09-30 2016-12-14 杭州飞鹿新能源科技有限公司 Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice
CN110396725A (en) * 2019-07-10 2019-11-01 天津爱旭太阳能科技有限公司 A kind of flocking additive and its application of monocrystalline silicon piece
CN112877784A (en) * 2019-12-24 2021-06-01 武汉宜田科技发展有限公司 Additive for silicon wafer texturing by alkali liquor
CN111394797A (en) * 2020-05-25 2020-07-10 彭晓晨 Preparation method of additive with positive pyramid structure for N-type monocrystalline silicon
CN112813502A (en) * 2020-12-30 2021-05-18 常州高特新材料股份有限公司 Monocrystalline silicon etching texturing additive and application thereof
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