CN115820256B - Additive for improving suede uniformity of solar cell and application process thereof - Google Patents
Additive for improving suede uniformity of solar cell and application process thereof Download PDFInfo
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- CN115820256B CN115820256B CN202211492208.0A CN202211492208A CN115820256B CN 115820256 B CN115820256 B CN 115820256B CN 202211492208 A CN202211492208 A CN 202211492208A CN 115820256 B CN115820256 B CN 115820256B
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- silicon wafer
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- 239000000654 additive Substances 0.000 title claims abstract description 32
- 230000000996 additive effect Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 27
- 239000002667 nucleating agent Substances 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002738 chelating agent Substances 0.000 claims abstract description 7
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 239000002270 dispersing agent Substances 0.000 claims abstract description 6
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 5
- 239000013530 defoamer Substances 0.000 claims abstract description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 5
- 159000000000 sodium salts Chemical class 0.000 claims description 5
- 229920002565 Polyethylene Glycol 400 Polymers 0.000 claims description 3
- 241001122767 Theaceae Species 0.000 claims description 3
- 229920003086 cellulose ether Polymers 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000003208 petroleum Substances 0.000 claims description 3
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 3
- 229940068918 polyethylene glycol 400 Drugs 0.000 claims description 3
- 239000001397 quillaja saponaria molina bark Substances 0.000 claims description 3
- 229930182490 saponin Natural products 0.000 claims description 3
- 150000007949 saponins Chemical class 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 3
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 2
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 229920002582 Polyethylene Glycol 600 Polymers 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims description 2
- 229940082500 cetostearyl alcohol Drugs 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 2
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229940057847 polyethylene glycol 600 Drugs 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229940068984 polyvinyl alcohol Drugs 0.000 claims description 2
- 229920002545 silicone oil Polymers 0.000 claims description 2
- 239000001632 sodium acetate Substances 0.000 claims description 2
- 235000017281 sodium acetate Nutrition 0.000 claims description 2
- 229960004249 sodium acetate Drugs 0.000 claims description 2
- 229960001790 sodium citrate Drugs 0.000 claims description 2
- 235000011083 sodium citrates Nutrition 0.000 claims description 2
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 2
- ZNCPFRVNHGOPAG-UHFFFAOYSA-L sodium oxalate Chemical compound [Na+].[Na+].[O-]C(=O)C([O-])=O ZNCPFRVNHGOPAG-UHFFFAOYSA-L 0.000 claims description 2
- 229940039790 sodium oxalate Drugs 0.000 claims description 2
- 239000001488 sodium phosphate Substances 0.000 claims description 2
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 2
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 2
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 2
- OULAJFUGPPVRBK-UHFFFAOYSA-N tetratriacontyl alcohol Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCO OULAJFUGPPVRBK-UHFFFAOYSA-N 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 2
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 34
- 238000004140 cleaning Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses an additive for improving the suede uniformity of a solar cell and a use process thereof, wherein the additive comprises the following components: 1-2% of defoamer, 0.5-1% of nucleating agent, 0.1-0.5% of dispersing agent, 0.5-1% of chelating agent, 0.1-0.5% of film forming agent and the balance of deionized water. The application process comprises the steps of preparing a silicon wafer texturing additive; preparing silicon wafer texturing solution; and (5) texturing. The defoaming agent can reduce surface interfacial tension, and quickly eliminate bubbles generated by hydrogen generated by the reaction of the silicon wafer and sodium hydroxide, so that sodium hydroxide solution and the silicon wafer can react more quickly and uniformly, thereby improving the uniformity of the texture after texturing and improving the conversion efficiency of the solar cell.
Description
Technical Field
The invention belongs to the technical field of solar cell preparation processes, and particularly relates to an additive for improving the suede uniformity of a solar cell and a use process thereof.
Background
The silicon wafer is used as one of basic materials for preparing solar cells, the photoelectric conversion efficiency of the finished solar cells is directly or indirectly influenced by the absorption of the surface of the silicon wafer to sunlight, a silicon wafer with a smoother surface is formed after a certain processing procedure, and the surface of the silicon wafer is required to be textured before the solar cells are manufactured, so that the roughness is increased, the absorption of the sunlight is greatly improved, and the higher conversion efficiency in unit area is achieved. The post-manufacturing procedure of the solar cell is required to be matched in the texturing process, but the post-manufacturing procedure of each cell manufacturer has slight difference on the requirements of the texturing, the texturing forms of the prior additive after texturing are different, the post-manufacturing procedure of each cell manufacturer cannot be well matched, and the problem of lower suitability exists.
Disclosure of Invention
The invention aims to provide the additive for improving the texture uniformity of the solar cell, when the silicon wafer is textured, the texture additive is added into the texture groove, so that the texture after the texture is more uniform and stereoscopic, the sunlight absorption is effectively improved, and meanwhile, the texture uniformity is good, and the additive can be matched with the subsequent processes of more cell manufacturers.
In order to achieve the above purpose, the invention adopts the following technical scheme: the additive for improving the suede uniformity of the solar cell comprises the following components in percentage by weight:
Defoaming agent 1-2%
0.5 To 1 percent of nucleating agent
0.1 To 0.5 percent of dispersing agent
Chelating agent 0.5-1%
0.1 To 0.5 percent of film forming agent
The balance of deionized water.
As a preferable mode of the above technical scheme, the defoaming agent is one or a combination of more of diethylene glycol monobutyl ether, methanol, modified silicone oil ether and cellulose ether.
As the preferable selection of the technical scheme, the nucleating agent is one or a combination of more of petroleum ether, nonionic fluorocarbon polymer, cetostearyl alcohol polyether-25 and tea saponin.
As a preference of the above technical scheme, the dispersing agent is one or a combination of a plurality of low molecular weight polyacrylate, trisodium phosphate, aA-AM copolymer sodium salt and AA/MAA copolymer sodium salt.
Preferably, the chelating agent is one or a combination of more of sodium oxalate, disodium ethylenediamine tetraacetate, sodium citrate, sodium acetate and sodium pyrophosphate.
As the preferable mode of the technical scheme, the film forming agent is one or a combination of more of polyethylene glycol-400, polyethylene glycol-600, polyvinyl alcohol, polyethylene oxide and sodium polyacrylate.
The application process of the additive for improving the suede uniformity of the solar cell comprises the following steps of:
1) Preparing a silicon wafer texturing additive: adding 1-2% of defoamer, 0.5-1% of nucleating agent, 0.1-0.5% of dispersing agent, 0.5-1% of chelating agent and 0.1-0.5% of film forming agent into deionized water, and uniformly mixing to obtain a silicon wafer texturing additive;
2) Preparing silicon wafer texturing liquid: adding the silicon wafer texturing additive prepared in the step 1) into 0.7-1.2% sodium hydroxide solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare silicon wafer texturing solution;
3) And (3) putting the silicon wafer into the silicon wafer texturing solution prepared in the step (2) for texturing, and performing texturing for 300-480s at 78-84 ℃.
The beneficial effects of the invention are as follows:
(1) The defoaming agent can reduce surface interfacial tension, and quickly eliminate bubbles generated by hydrogen generated by the reaction of the silicon wafer and sodium hydroxide, so that a sodium hydroxide solution and the silicon wafer can react more quickly and uniformly, and the uniformity of the texture after texturing is improved.
(2) The hydrophobic segment of the nucleating agent is attached to the surface of the silicon wafer in the solution, so that the silicon wafer is prevented from reacting with hydroxyl, and the surface of the silicon wafer, to which the nucleating agent is not attached, reacts with hydroxyl, so that the reaction rate difference is increased, which is equivalent to the increase of the anisotropy of the original monocrystalline silicon wafer, and the silicon wafer can form a suede faster when reacting with a sodium hydroxide solution.
(3) The chelating agent disclosed by the invention can be used for effectively chelating the reaction solution and metal ion impurities brought in the silicon wafer processing, and is helpful for the subsequent silicon wafer cleaning.
(4) The film forming agent is easy to adsorb on the surface of a silicon wafer to form a structure similar to a filter screen, so that the nucleating agent is effectively prevented from agglomerating and adsorbing on the surface of the silicon wafer, the nucleating agent is adsorbed more uniformly on the surface of the silicon wafer, and the suede prepared by the reaction is more uniform and three-dimensional.
(5) After the texturing additive is used, the obtained textured surface is more uniform, small broken textured surfaces are avoided, the cleaning is easy, different subsequent process requirements can be matched, and the conversion efficiency of the solar cell is improved by 0.02-0.05%.
Drawings
FIG. 1 is a SEM image of a pile face after the production line of the pile additive;
fig. 2 is a SEM image of a pile after being pile using the pile additive of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Examples
1. Preparing the wool making additive
Adding 1% of methanol, 0.5% of cellulose ether, 0.5% of petroleum ether, 0.3% of tea saponin, 0.2% of AA/MAA copolymer sodium salt, 1% of sodium citrate, 0.2% of polyethylene glycol-400 and 0.3% of sodium polyacrylate into deionized water, and uniformly mixing to obtain the silicon slice texturing additive.
2. Monocrystalline silicon texturing
Adding 320L of deionized water into a texturing tank, heating to 80 ℃, keeping the temperature constant, adding 5L of sodium hydroxide solution (48% of solid content) and 1.8L of the texturing additive prepared in the step 1, starting circulation bubbling, uniformly mixing, putting the silicon wafer subjected to the pre-cleaning into the texturing tank for reaction for 400 seconds by taking 400pcs as a batch, taking out the silicon wafer after the reaction is finished, performing the subsequent procedures of cleaning, drying and the like, adding 500mL of alkali solution, 120mL of the texturing additive and 10000mL of deionized water after each texturing reaction is carried out for 1 batch, and thus, circularly supplementing the solution to finish the cleaning of each batch of silicon wafer.
Comparative example 1
Adding 320L of deionized water into a texturing tank, heating to 80 ℃, keeping the temperature constant, adding 5L of sodium hydroxide solution (48% of solid content) and 1.8L of original texturing additive (K02 (T30D) produced by Jiaxing, small time V technology Co., ltd.), starting circulation bubbling, uniformly mixing, putting the silicon wafer subjected to pre-cleaning into the texturing tank with 400pcs as one batch for reaction 400s, taking out the silicon wafer after the reaction is finished, performing subsequent processes such as cleaning, drying and the like, adding 500mL of alkali solution, 120mL of texturing additive and 10000mL of deionized water after each texturing reaction is 1 batch, and thus, circularly supplementing the liquid to finish cleaning each batch of silicon wafer.
The monocrystalline silicon wafers after the texturing of the example 1 and the comparative example 1 were respectively subjected to scanning electron microscope analysis, and the scanning electron microscope plan views are respectively shown in fig. 1 and 2. As can be seen from the comparison of the accompanying drawings 1 and 2 in the specification, the monocrystalline silicon wafer obtained by adopting the texturing additive and the application process thereof has more uniform texturing. The surface of the monocrystalline silicon wafer prepared by adopting the original wool making additive in the early stage of the applicant has different pyramid suedes, and the large-size pyramid and the small-size pyramid have obvious zoning phenomenon.
And counting the size distribution condition of the pyramid in the specific area, wherein the size distribution statistics of the pyramid are shown in the following table:
Size of the device | 0.3-0.6 | 0.6-0.9 | 0.9-1.2 | 1.2-1.5 | 1.5-1.8 | 1.8-2.1 | 2.1-2.4 | 2.4-2.7 |
Example 1 contains number of | 0 | 63 | 265 | 258 | 199 | 33 | 9 | 0 |
Comparative example 1 contains the number | 0 | 89 | 254 | 241 | 148 | 61 | 30 | 4 |
The monocrystalline silicon wafers after the texturing of the embodiment 1 and the comparative embodiment 1 are respectively processed into battery pieces by adopting the same subsequent processing technology, photoelectric performance tests are respectively carried out, the photoelectric performance of the battery pieces corresponding to the embodiment 1 is compared with the photoelectric performance of the battery pieces corresponding to the comparative embodiment 1, and the results are shown in the following table:
Efficiency difference | Eta | Voc | Isc | FF |
Example 1 comparative example 1 | 0.034 | 0.000 | 0.007 | 0.07 |
From the table, the energy conversion efficiency (Eta), the short-circuit current (Isc) and the Filling Factor (FF) of the battery piece prepared by the additive for improving the texture uniformity of the solar battery and the application process of the additive are obviously improved. This is because a more uniform pile makes the diffusion, deposition process more uniform across the pile, and better contact of the paste to the pile for the printing process, thus improving short circuit current (Isc), fill Factor (FF).
It should be noted that technical features such as a scanning electron microscope related to the present application should be considered as the prior art, and specific structures, working principles, and control modes and spatial arrangement modes possibly related to the technical features should be selected conventionally in the art, and should not be considered as the point of the present application, which is not further specifically expanded and detailed.
While the preferred embodiments of the present invention have been described in detail, it should be appreciated that numerous modifications and variations may be made in accordance with the principles of the present invention by those skilled in the art without undue burden, and thus, all technical solutions which may be obtained by logic analysis, reasoning or limited experimentation based on the principles of the present invention as defined by the claims are within the scope of protection as defined by the present invention.
Claims (1)
1. The application process of the additive for improving the suede uniformity of the solar cell is characterized by comprising the following steps of:
1) Preparing a silicon wafer texturing additive: adding 1-2% of defoamer, 0.5-1% of nucleating agent, 0.1-0.5% of dispersing agent, 0.5-1% of chelating agent and 0.1-0.5% of film forming agent into deionized water, and uniformly mixing to obtain a silicon wafer texturing additive;
2) Preparing silicon wafer texturing liquid: adding the silicon wafer texturing additive prepared in the step 1) into 0.7-1.2% sodium hydroxide solution according to the mass ratio of 0.4-0.6%, and uniformly mixing to prepare silicon wafer texturing solution;
3) Putting the silicon wafer into the silicon wafer texturing solution prepared in the step 2) for texturing, and texturing for 300-480s at 78-84 ℃;
The defoaming agent is one or a combination of more of diethylene glycol monobutyl ether, methanol, modified silicone oil ether and cellulose ether;
The nucleating agent is one or a combination of more of petroleum ether, nonionic fluorocarbon polymer, cetostearyl alcohol polyether-25 and tea saponin;
The dispersing agent is one or a combination of a plurality of low molecular weight polyacrylate, trisodium phosphate, aA-AM copolymer sodium salt and AA/MAA copolymer sodium salt;
The chelating agent is one or a combination of more of sodium oxalate, disodium ethylenediamine tetraacetate, sodium citrate, sodium acetate and sodium pyrophosphate;
The film forming agent is one or a combination of more of polyethylene glycol-400, polyethylene glycol-600, polyvinyl alcohol, polyethylene oxide and sodium polyacrylate.
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