CN114823943A - Texture structure, monocrystalline silicon wafer comprising texture structure, texture manufacturing method and application - Google Patents

Texture structure, monocrystalline silicon wafer comprising texture structure, texture manufacturing method and application Download PDF

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CN114823943A
CN114823943A CN202210281252.0A CN202210281252A CN114823943A CN 114823943 A CN114823943 A CN 114823943A CN 202210281252 A CN202210281252 A CN 202210281252A CN 114823943 A CN114823943 A CN 114823943A
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texturing
silicon wafer
additive
texture
polyacrylamide
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CN114823943B (en
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徐杨
姚伟明
张敏敏
强飞
虢小康
斯小阳
夏庆华
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Huzhou Flying Deer Amperex Technology Ltd
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention relates to the field of monocrystalline silicon battery manufacturing, in particular to a suede structure which comprises single suede structures which are randomly distributed and are in an octagonal pyramid structure, wherein the bottom surface of each suede structure is octagonal, and the part above the bottom surface is in an octagonal pyramid shape. The invention overcomes the defects of short optical path, high reflectivity and poor light trapping effect of the common tetrahedral pyramid structure in the prior art due to small specific surface area. The single texturing structure with the octagonal pyramid structure is contained in the texturing structure, so that the surface area of the octagonal pyramid structure can be effectively increased on the premise that the bottom surfaces are consistent in area, the optical path is increased, the reflectivity of light is reduced, and the light trapping effect of the texturing structure on the light is better.

Description

Texture structure, monocrystalline silicon wafer comprising texture structure, texture manufacturing method and application
Technical Field
The invention relates to the field of monocrystalline silicon battery manufacturing, in particular to a textured structure, a monocrystalline silicon wafer comprising the textured structure, a texturing method and application.
Background
The rapid economic growth of countries in the world and the increasing demand for energy by human beings lead to the rapid shortage of non-renewable resources such as petroleum, natural gas, coal mines and the like, and environmental pollution and energy shortage become factors which severely restrict social development.
Solar energy resources are a real green and environment-friendly energy, and are urgent needs of human society due to inexhaustibility. While an important way to apply solar energy to life is photovoltaic power generation, silicon wafers are the most important raw material for the photovoltaic power generation industry. By increasing the absorption of the surface of the silicon wafer to light, the efficiency of the crystalline silicon solar cell can be improved, and the production cost of the crystalline silicon solar cell can be reduced. The chemical texturing technology is adopted to corrode the surface of the silicon wafer, a textured surface with uniform size, good roughness and proper reflectivity is manufactured, and the photoelectric conversion efficiency of the solar cell can be effectively improved, wherein alkali texturing is the main texturing means of single crystal at the present stage.
For the photovoltaic market in China, huge changes also occur in recent years, and some enterprises already master advanced single crystal production processes, so that the photovoltaic market becomes the fuzz of the global photovoltaic market. The texturing additive used in the texturing process plays an important role in single crystal texturing, on one hand, assists in a texturing process, controls the reaction rate and adjusts the texture appearance, and on the other hand, solves the problems in the texturing process, such as uneven texture, raindrop, mottle and the like.
The texture structures obtained by the traditional alkali texturing additive are pyramid textures, including forward pyramids and inverted pyramids, and the difference is only in the size and height of the pyramids.
For example, in a preparation method of a crystalline silicon surface reverse pyramid suede structure with application number CN201910160490.4, a layer of alumina particle layer is formed on the surface of a silicon wafer through pretreatment, and then alkali texturing is performed on the pretreated silicon wafer to obtain the reverse pyramid suede structure; the alumina particle layer consists essentially of dispersed alumina particles. The preparation method of the crystal silicon surface inverted pyramid suede structure is suitable for both monocrystalline silicon wafers and polycrystalline silicon wafers, and can form uniform, fine and dense inverted pyramid suede structures on the surfaces of the silicon wafers.
The application number is CN202110953879.1, the additive for making herbs into wool rapidly comprises the following components in percentage by mass: 0.5-10% of nucleating agent, 1-10% of textured surface catalyst, 0.01-0.05% of surfactant, 0.05-0.5% of defoaming agent and the balance of deionized water. When the single-side corrosion depth of the texturing additive reaches 1.5um, the complete growth of the regular pyramid can be realized, and the size of the textured surface of 2um can be obtained.
Although the cell efficiency of the existing pyramid suede can still be kept at a higher level, the optical path of the existing pyramid suede is shorter due to the smaller specific surface area of the ordinary pyramid structure, so that the reflectivity of the existing pyramid suede is higher, and the light trapping effect is poorer.
Disclosure of Invention
The invention provides a texture surface structure, a monocrystalline silicon wafer comprising the texture surface structure, a texture surface making method and application to overcome the defects that the light path is short, the reflectivity is high and the light trapping effect is poor due to the fact that the specific surface area of a common tetrahedral pyramid structure is small in the prior art.
In order to realize the purpose of the invention, the invention is realized by the following technical scheme:
a first object of the invention is to provide a pile structure,
the suede structure comprises monomer suede structures which are randomly distributed and are in an octagonal pyramid structure;
the bottom surface of the monomer texturing structure is octagonal, and the part above the bottom surface is in an octagonal pyramid shape.
The single texturing structure with the octagonal pyramid structure is contained in the texturing structure, so that the surface area of the octagonal pyramid structure can be effectively increased on the premise that the bottom surfaces are consistent in area, the optical path is increased, the reflectivity of light is reduced, and the light trapping effect of the texturing structure on the light is better.
Compared with the regular pyramid suede of the traditional rectangular pyramid structure, the suede structure is more flat, so that the contact between the silicon wafer and the slurry is better in the subsequent passivation stage.
In addition, in the aspect of electrical property, the single texturing structure of the octagonal pyramid structure increases short-circuit current and a filling factor, so that the conversion efficiency of the solar cell is improved.
Preferably, the side length of the bottom surface of the monomer texturing structure is 0.3-1 μm;
the height of the monomer texture-making structure is 0.7-1.0 μm;
the included angle of the top of each side edge of the single-body texture-making structure is 45-60 degrees.
Preferably, the specific surface area of the suede structure is more than or equal to 1.5.
It is a second object of the present invention to provide a single crystal silicon wafer,
the textured structure is distributed on the surface of the monocrystalline silicon piece.
Preferably, the distribution density of the monomer texture-making structures in the texture-making structure on the surface of the monocrystalline silicon wafer is 10 4 —10 6 Pieces/mm.
The third purpose of the invention is to provide a method for texturing a monocrystalline silicon wafer,
the method comprises the following steps:
(1) preparing alkali liquor, adding a texturing additive into the alkali liquor, and uniformly stirring to obtain texturing liquid;
(2) putting the silicon wafer into a texturing solution for texturing to obtain a textured silicon wafer with the textured structure;
the texturing additive comprises the following components in percentage by weight: 1-5 wt% of alkyl sulfonate, 0.15-1 wt% of polyacrylamide, 0.5-5 wt% of alkylphenol polyoxyethylene, and the balance of water.
The inventor of the invention accidentally learns that after the wool making additive is added into the wool making liquid, the single wool making structure in an octagonal pyramid structure can be induced to be formed on the surface of a silicon wafer in the wool making process.
The reason is presumed that the texturing additive provided by the invention simultaneously contains a plurality of different surfactants, and the surfactants can induce different crystal faces of the silicon crystal, so that the corrosion effect of the different crystal faces of the silicon crystal can be anisotropic when the different crystal faces are corroded by sodium hydroxide in the texturing process, and thus, an octagonal pyramid structured textured face with a uniform and stable structure is formed after texturing is finished.
Compared with the traditional regular tetrahedral pyramid structure, the octagonal pyramid suede structure formed by the texturing additive has the advantages that the surface area of the octagonal pyramid suede structure is effectively improved, so that the optical path is increased, the reflectivity of light is reduced, and the light trapping effect of the suede structure on the light is better. Compared with the traditional regular pyramid texture, the texture structure is flatter, so that the silicon wafer is better contacted with the slurry in the subsequent passivation stage. In addition, in the aspect of electrical property, the eight-pyramid textured structure also increases short-circuit current and a filling factor, so that the conversion efficiency of the solar cell is improved.
In addition, in the prior art, the suede of the inverted pyramid structure often needs the participation of metal ions in the suede making process, part of metal ions remained after the suede making process of the metal ions enter the inverted pyramid structure and are difficult to clean, and the remained metal ions can form a composite center with crystalline silicon after entering the silicon crystal, so that the efficiency of the battery is influenced. The invention can effectively avoid the defects because the metal ions are not needed to participate in the texturing process.
In addition, through the experiments of the inventor of the present invention, the content of each component in the above-mentioned texturing additive has a significant influence on the final texturing effect. When the content of the alkyl sulfonate is less than 1%, the monomer texturing structure with the octagonal pyramid structure can be formed, but the monomer texturing structure cannot be fully distributed on the surface of the whole silicon wafer, and a plurality of gaps still exist among the monomer texturing structures with the octagonal pyramid structure, so that the performance of the monomer texturing structure cannot meet the actual application requirements. When the content of the alkyl sulfonate is more than 5 percent, the octagonal pyramid suede structure disappears, and instead, the octagonal pyramid suede structure becomes a common tetrahedral pyramid structure.
And when the content of the polyacrylamide is lower than 0.15%, the surface of the silicon wafer cannot be napped, and when the content of the polyacrylamide is higher than 1%, the napped surface is too small, so that the light trapping effect of the silicon wafer is not improved.
When the content of the alkylphenol ethoxylates is lower than 0.5%, the problem that the surface of the silicon wafer cannot be flocked is caused, and when the content of the alkylphenol ethoxylates is higher than 0.5%, the flocked surface is polluted.
Preferably, the alkyl sulfonate has 12 or more carbon atoms in the alkyl group.
The inventors of the present invention have found that the carbon chain length in the alkyl sulfonate has a significant effect on the overall texturing effect. The inventor tests show that when the number of carbon atoms in the alkyl sulfonate is less than 12, the critical micelle concentration of the alkyl sulfonate is high, the dirt-removing capability of the alkyl sulfonate is reduced, so that a product generated by corrosion in the texturing process cannot be quickly removed, the reaction between alkali and a silicon wafer is delayed, the induction effect on the silicon wafer is poor, and a complete octagonal pyramid textured structure cannot be formed. The cleaning capacity of the cleaning agent is greatly improved after the alkyl sulfonate with the carbon number of the alkyl group more than 12 is selected, so that byproducts generated in the texturing process can be quickly wrapped by the alkyl sulfonate to be separated from the surface of a silicon wafer, the reaction between the silicon wafer and alkali can be quicker, and the cleaning agent is favorable for inducing the formation of an octagonal pyramid textured structure on the surface of the silicon wafer.
Preferably, the alkyl sulfonate is one or more of sodium dodecyl sulfonate, sodium dodecyl benzene sulfonate, sodium tridecyl sulfonate, sodium hexadecyl sulfonate and sodium n-octadecyl sulfonate.
Preferably, the polyacrylamide is a nonionic polyacrylamide.
Preferably, the molecular weight of the polyacrylamide is 500-1000 ten thousand.
The inventor of the present invention found in experiments that the molecular weight of polyacrylamide has a large influence on the finally formed texture surface, wherein when the molecular weight of polyacrylamide is less than 500 ten thousand, the polyacrylamide has a poor adsorption and sedimentation effect on sodium silicate generated in the texture surface making process, and is not favorable for the reaction between the final alkali solution and the silicon wafer. When the molecular weight of the polyacrylamide is more than 1000 ten thousand, the viscosity of the whole texturing solution is high, and hydrogen on the surface of the silicon wafer cannot be removed in time in the texturing process, so that the silicon wafer after texturing has more defects. Therefore, when the molecular weight of the polyacrylamide is selected to be 500-1000 ten thousand, the alkali in the texturing solution can quickly react with the silicon wafer, and simultaneously, the hydrogen formed in the reaction process can be quickly discharged, so that the defects of raindrop, mottle and the like formed on the surface of the silicon wafer are prevented.
Preferably, the addition mass of the texturing additive in the step (1) accounts for 0.2-0.5% of the total texturing solution.
Preferably, the wool making temperature in the step (2) is 70-90 ℃, and the wool making time is 5-10 min.
The fourth purpose of the invention is to provide the application of the textured structure or the monocrystalline silicon wafer in a solar cell.
Therefore, the invention has the following beneficial effects:
(1) compared with the traditional pyramid structure, the single texturing structure with the octagonal pyramid structure, which is prepared by the invention, has a larger specific surface area, so that the optical path is increased, the reflectivity of light is reduced, and the light trapping effect of the texturing structure on the light is better.
(2) Compared with the regular pyramid suede of the traditional rectangular pyramid structure, the suede structure is more flat, so that the contact between the silicon wafer and the slurry is better in the subsequent passivation stage.
(3) In the aspect of electrical property, the single texturing structure of the octagonal pyramid structure also increases short-circuit current and a filling factor, so that the conversion efficiency of the solar cell is improved.
Drawings
FIG. 1 is an electron micrograph of an octapyramid textured structure on the surface of a monocrystalline textured silicon wafer.
Fig. 2 is an enlarged view of a single-body texturing structure of an octagonal pyramid structure.
Fig. 3 is a picture of a textured structure formed after the content of alkyl sulfonate is less than 1%.
Fig. 4 is a picture of a textured structure formed after the content of alkyl sulfonate is more than 5%.
FIG. 5 is a photograph of a textured structure formed after the content of polyacrylamide is less than 0.15%.
FIG. 6 is a picture of a textured structure formed after the content of polyacrylamide is higher than 1%.
FIG. 7 is a picture of a textured structure formed when the content of alkylphenol ethoxylates is less than 0.5%.
Fig. 8 is a picture of a textured structure formed when the content of alkylphenol ethoxylates is higher than 5%.
Detailed Description
The invention is further described with reference to the drawings and the specific embodiments. Those skilled in the art will be able to implement the invention based on these teachings. Moreover, the embodiments of the present invention described in the following description are generally only some embodiments of the present invention, and not all embodiments. Therefore, all other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative effort shall fall within the protection scope of the present invention.
Example 1
An additive for making wool, 1 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 2
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 3
An additive for making wool, 3 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 4
An additive for making wool, 5wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 5
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.15 wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 6
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.8 wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 7
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 1 wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 8
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 0.5wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 9
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 2.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 10
An additive for making wool, 2 wt% of sodium dodecyl sulfonate, 0.5wt% of nonionic polyacrylamide with molecular weight of 500-ten-thousand, 4wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 11
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 5wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 12
An additive for making wool, 2 wt% of sodium dodecyl benzene sulfonate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 13
An additive for making wool, which comprises 2 wt% of sodium hexadecylsulfonate, 0.5wt% of non-ionic polyacrylamide with the molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Example 14
An additive for making wool, 2 wt% of sodium n-octadecyl sulfonate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-over-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 1
An additive for making wool, 0.5wt% of sodium dodecyl sulfate, 0.5wt% of nonionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 2
An additive for making wool, 8 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 3
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.1 wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 4
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 1.5 wt% of nonionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 5
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 0.3 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 6
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 5.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 7
An additive for making wool, 2 wt% of sodium n-octane sulfonate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 8
An additive for making wool, 1-sodium decane sulfonate 2 wt%, non-ionic polyacrylamide with molecular weight of 500-1000 ten thousand, alkylphenol polyoxyethylene ether 1.5 wt%, the rest is water.
Comparative example 9
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 200-400 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
Comparative example 10
An additive for making wool, 2 wt% of sodium dodecyl sulfate, 0.5wt% of non-ionic polyacrylamide with molecular weight of 1000-1500 ten thousand, 1.5 wt% of alkylphenol polyoxyethylene, and the balance of water.
The formulations of the texturing additives prepared in examples 1 to 14 and comparative examples 1 to 10 are summarized in table 1 below.
TABLE 1
Figure 954048DEST_PATH_IMAGE002
Figure 937047DEST_PATH_IMAGE004
Weighing the components in turn according to the formulas in examples 1-14 and comparative examples 1-10, and stirring for 3h in a water bath at 60 ℃; and standing until the foam completely disappears, and finally filtering by using a filter element with the aperture of 10 mu m to prepare the wool making additive.
The preparation of the texturing solution and the texturing method are as follows:
adding 0.93 wt% of NaOH and 0.4wt% of texturing additive during texturing of the monocrystalline silicon wafer to form a texturing solution, uniformly stirring, and reacting at 80 ℃ for 7min to obtain the monocrystalline texturing silicon wafer.
(in the present document, 0.4wt% is selected as a reference addition amount, but according to the test of the inventor, the addition amount of the texturing additive is in the range of 0.2-0.5 wt%, and the texturing temperature is in the range of 70-90 ℃, so that an octagonal pyramid textured structure can be formed on the surface of the silicon wafer).
By adding the texturing additive in the embodiments 1 to 14, an octagonal pyramid textured structure can be formed on the surface of the single crystal texturing silicon wafer, an electron micrograph of the surface of the single crystal texturing silicon wafer prepared by the texturing additive in the embodiment 2 is shown in fig. 1, and fig. 2 is an enlarged view of the octagonal pyramid textured structure.
As can be seen from FIGS. 1-2, the texture of the octagonal pyramid structure prepared by the method is stable in structure and can be closely and uniformly distributed on the surface of a silicon wafer, the side length of the bottom surface of the single texture-making structure is in the range of 0.3-1 μm, the height of the single texture-making structure is in the range of 0.7-1.0 μm, and the included angle between the tops of the side edges of the single texture-making structure is 45-60 degrees.
Comparing examples 1 to 4 with comparative examples 1 to 2, we found that the addition amount of the alkyl sulfonate has an important effect on the formation of the octagonal pyramid textured structure. When the content of the alkyl sulfonate is less than 1%, although the texture surface of the octagonal pyramid structure can be formed, the texture surface cannot be fully distributed on the whole silicon wafer surface (as shown in fig. 3), and a large number of gaps still exist between the octagonal pyramid texture surface structures, so that the performance of the texture surface cannot meet the actual application requirements. When the content of the alkyl sulfonate is more than 5%, the octagonal pyramid texture structure disappears, and instead, the octagonal pyramid texture structure becomes a common tetrahedral pyramid structure (as shown in fig. 4).
Comparing examples 2, 5 to 7 with comparative examples 3 to 4, we found that the addition amount of polyacrylamide also has an important influence on the formation of the octagonal pyramid textured structure. When the content of the polyacrylamide is less than 0.15%, the surface of the silicon wafer cannot be napped (as shown in fig. 5), and when the content of the polyacrylamide is more than 1%, the napped surface is too small (as shown in fig. 6), which is not beneficial to improving the light trapping effect of the surface of the silicon wafer.
Comparing examples 2, 8-11 with comparative examples 5-6, we find that the addition amount of alkylphenol polyoxyethylene has an important influence on the formation of the octagonal pyramid suede structure. When the content of alkylphenol ethoxylates is lower than 0.5%, the problem that the surface of the silicon wafer cannot be flocked is caused (as shown in fig. 7), and when the content of alkylphenol ethoxylates is higher than 5%, the flocked surface is dirtied (as shown in fig. 8).
Comparing examples 2, 12 to 14 with comparative examples 7 to 8, we found that the length of the carbon chain in the alkyl sulfonate also has an important influence on the formation of the octagonal pyramid textured structure. When the carbon content is less than 12, the complete octagonal pyramid structure cannot be formed, and only the common tetrahedral pyramid structure can be formed.
We have also found that the molecular weight of polyacrylamide also has a significant effect on the formation of octapyramidal texture. When the molecular weight of the polyacrylamide is less than 500 ten thousand, the adsorption and sedimentation effects of the polyacrylamide on sodium silicate generated in the wool making process are poor, and the reaction between final alkali liquor and a silicon wafer is not facilitated. When the molecular weight of the polyacrylamide is more than 1000 ten thousand, the viscosity of the whole texturing solution is high, and hydrogen on the surface of the silicon wafer cannot be removed in time in the texturing process, so that the silicon wafer after texturing has more defects. Therefore, when the molecular weight of the polyacrylamide is selected to be 500-1000 ten thousand, the alkali in the texturing solution can quickly react with the silicon wafer, and simultaneously, the hydrogen formed in the reaction process can be quickly discharged, so that the defects of raindrop marks, flower spots and the like formed on the surface of the silicon wafer can be prevented.
Finally, the texturing additive in the embodiment 2 of the invention and several common pyramid texturing additives which can generate the same size and height in the market are used for texturing experiments at the same temperature, water, NaOH dosage, additive dosage and reaction time, and then 5 points are randomly selected on a microscope to test the specific surface area and the average value is obtained. And simultaneously, testing the reflectivity of the silicon wafer obtained after the texturing is finished.
Wherein:
the formula of the additive is as follows: 0.01% of sodium cellulose sulfonate, 0.1% of sodium carboxymethylcellulose, 0.01% of tannic acid, 0.05% of hyperbranched polyacrylamide, 1% of potassium hydroxide and the balance of water.
The formula of the additive is as follows: 0.1% of sodium lignosulfonate, 0.01% of glycerol polyether, 0.3% of hydroxyethyl-beta-cyclodextrin, 0.5% of 1, 4-bis (2-hydroxyethyl) piperazine and the balance of water.
The formula of the additive is as follows: 1% of polyethylene glycol-600, 0.1% of sodium benzoate, 1% of citric acid, 1% of hydrolyzed polymaleic anhydride, 0.1% of sodium acetate and the balance of water.
The formula of the additive is as follows: 5% of hydrolyzed polyacrylonitrile sodium salt, 2% of choline, 0.02% of sodium dodecyl sulfate, 0.15% of toluene diamine polyether polyol with the viscosity of 12000 mPa.s, and the balance of water.
The formula of the additive is as follows: 0.05% of sodium lignosulphonate, 0.0001% of sodium polynaphthalene formaldehyde sulfonate, 1.3% of polyethylene glycol, 3.5% of diethylene glycol monobutyl ether, 1.5% of potassium perfluorohexyl sulfonate and the balance of water.
Adding 10L of water, 93g of NaOH and 40g of additive into a reaction tank, putting the monocrystalline silicon wafer into the reaction tank when the water temperature is increased to 80 ℃, reacting for 7 minutes, washing the monocrystalline silicon wafer clean after the reaction is finished, drying the surface moisture, and carrying out a specific surface area test and a reflectivity test, wherein the test results are shown in the following table 2.
TABLE 2
Product name Example 2 Additive I Additive 2 Additive (c) Additive IV Additive agent
Pyramid size/. mu.m 1.64 1.6 1.59 1.68 1.7 1.65
Pyramid height/. mu.m 0.89 0.86 0.85 0.9 0.92 0.88
Specific surface area 1.52 1.28 1.3 1.35 1.37 1.33
Reflectivity/%) 9.56 9.73 9.85 9.97 9.65 10.12
Wherein: the specific surface area is defined as follows: surface area after texturing (μm) 2 ) Surface area before texturing (μm) 2 ）。
From the data in the above table, it can be seen that the textured structure of the octagonal pyramid structure prepared by the invention has a significantly increased specific surface area under the condition that the size is close to that of the textured structure, so that the optical path of light irradiated on the surface of a silicon wafer is significantly increased, the reflectivity of the light is reduced, and the textured structure has a better light trapping effect on the light.

Claims (10)

1. A suede structure is characterized in that the fabric is provided with a first fabric layer,
the texture etching device comprises monomer texture etching structures which are randomly distributed and have an octagonal pyramid structure;
the bottom surface of the monomer texturing structure is octagonal, and the part above the bottom surface is in an octagonal pyramid shape.
2. A pile structure according to claim 1,
the side length of the bottom surface of the single texturing structure is 0.3-1 mu m;
the height of the monomer texture-making structure is 0.7-1.0 μm;
the included angle of the top of each side edge of the single-body texture-making structure is 45-60 degrees.
3. A pile structure according to claim 1 or 2,
the specific surface area of the suede structure is more than or equal to 1.5.
4. A single-crystal silicon wafer characterized in that,
the textured structure as claimed in any one of claims 1 to 3 is distributed on the surface of the monocrystalline silicon wafer.
5. The single crystal silicon wafer according to claim 4,
the distribution density of the single texturing structure in the texturing structure on the surface of the monocrystalline silicon piece is 10 4 —10 6 Pieces/mm.
6. A monocrystalline silicon piece texturing method is characterized in that,
the method comprises the following steps:
(1) preparing alkali liquor, adding a texturing additive into the alkali liquor, and uniformly stirring to obtain texturing liquid;
(2) putting the silicon wafer into a texturing solution for texturing to obtain a textured silicon wafer with a textured structure as claimed in any one of claims 1 to 3;
the texturing additive comprises the following components in percentage by weight: 1-5 wt% of alkyl sulfonate, 0.15-1 wt% of polyacrylamide, 0.5-5 wt% of alkylphenol polyoxyethylene, and the balance of water.
7. The method of claim 6, wherein the etching process is carried out on a single-crystal silicon wafer,
the adding mass of the texturing additive in the step (1) accounts for 0.2-0.5% of the total texturing liquid.
8. The method of claim 6 or 7, wherein the etching is performed on the silicon single crystal wafer,
the additive for making the wool comprises:
the carbon number of the alkyl group of the alkyl sulfonate is more than or equal to 12;
the polyacrylamide is nonionic polyacrylamide, and the molecular weight of the polyacrylamide is 500-1000 ten thousand.
9. The method of claim 6, wherein the etching process is carried out on a single-crystal silicon wafer,
in the step (2), the wool making temperature is 70-90 ℃, and the wool making time is 5-10 min.
10. Use of the textured structure of any one of claims 1 to 3 or the monocrystalline silicon wafer of claim 4 or 5 in a solar cell.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377252A (en) * 2022-10-24 2022-11-22 英利能源发展(天津)有限公司 Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072332A (en) * 2003-08-26 2005-03-17 Kyocera Corp Thin-film solar cell
JP2014192370A (en) * 2013-03-27 2014-10-06 Kaneka Corp Crystal silicon solar cell, process of manufacturing the same, and solar cell module
CN108666380A (en) * 2018-06-08 2018-10-16 南京纳鑫新材料有限公司 A kind of Buddha's warrior attendant wire cutting polysilicon chip and its etching method with class chamfered edge platform suede structure
CN111501105A (en) * 2020-05-25 2020-08-07 常州时创能源股份有限公司 Monocrystalline silicon piece texturing additive and application thereof
CN113683962A (en) * 2021-08-31 2021-11-23 马惠琪 Preparation method of silicon dioxide grinding and polishing agent

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072332A (en) * 2003-08-26 2005-03-17 Kyocera Corp Thin-film solar cell
JP2014192370A (en) * 2013-03-27 2014-10-06 Kaneka Corp Crystal silicon solar cell, process of manufacturing the same, and solar cell module
CN108666380A (en) * 2018-06-08 2018-10-16 南京纳鑫新材料有限公司 A kind of Buddha's warrior attendant wire cutting polysilicon chip and its etching method with class chamfered edge platform suede structure
CN111501105A (en) * 2020-05-25 2020-08-07 常州时创能源股份有限公司 Monocrystalline silicon piece texturing additive and application thereof
WO2021238496A1 (en) * 2020-05-25 2021-12-02 常州时创能源股份有限公司 Monocrystalline silicon wafer texturing additive and use thereof
CN113683962A (en) * 2021-08-31 2021-11-23 马惠琪 Preparation method of silicon dioxide grinding and polishing agent

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115377252A (en) * 2022-10-24 2022-11-22 英利能源发展(天津)有限公司 Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method

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