CN116144432A - Solar cell silicon wafer cleaning agent and application thereof - Google Patents
Solar cell silicon wafer cleaning agent and application thereof Download PDFInfo
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- CN116144432A CN116144432A CN202211671944.2A CN202211671944A CN116144432A CN 116144432 A CN116144432 A CN 116144432A CN 202211671944 A CN202211671944 A CN 202211671944A CN 116144432 A CN116144432 A CN 116144432A
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- silicon wafer
- cleaning agent
- solar cell
- cell silicon
- sodium
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 44
- 238000004140 cleaning Methods 0.000 claims abstract description 42
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000004094 surface-active agent Substances 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000243 solution Substances 0.000 claims abstract description 15
- 239000003513 alkali Substances 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 10
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- 239000002270 dispersing agent Substances 0.000 claims abstract description 8
- 239000000080 wetting agent Substances 0.000 claims abstract description 8
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 5
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 16
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 16
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- -1 organic acid ammonium salt Chemical class 0.000 claims description 12
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 9
- 239000012670 alkaline solution Substances 0.000 claims description 9
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 9
- 239000003945 anionic surfactant Substances 0.000 claims description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 6
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- BCKXLBQYZLBQEK-KVVVOXFISA-M Sodium oleate Chemical compound [Na+].CCCCCCCC\C=C/CCCCCCCC([O-])=O BCKXLBQYZLBQEK-KVVVOXFISA-M 0.000 claims description 3
- 150000005215 alkyl ethers Chemical class 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229940043237 diethanolamine Drugs 0.000 claims description 3
- 229910003002 lithium salt Inorganic materials 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 3
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 claims description 3
- 229940048086 sodium pyrophosphate Drugs 0.000 claims description 3
- 235000019818 tetrasodium diphosphate Nutrition 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 2
- 229920001021 polysulfide Polymers 0.000 claims description 2
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 2
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 2
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 2
- 239000012752 auxiliary agent Substances 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000010954 inorganic particle Substances 0.000 abstract description 3
- 231100000252 nontoxic Toxicity 0.000 abstract description 3
- 230000003000 nontoxic effect Effects 0.000 abstract description 3
- 210000002268 wool Anatomy 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 36
- 239000007788 liquid Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000003344 environmental pollutant Substances 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000013522 chelant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005063 solubilization Methods 0.000 description 2
- 230000007928 solubilization Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/06—Phosphates, including polyphosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3769—(Co)polymerised monomers containing nitrogen, e.g. carbonamides, nitriles or amines
- C11D3/3776—Heterocyclic compounds, e.g. lactam
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/146—Sulfuric acid esters
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
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- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the technical field of solar cells, and in particular relates to a silicon wafer cleaning agent for a solar cell, which comprises, by mass, 0.15-0.4% of a chelating agent, 2.0-4.0% of a wetting agent, 0.02-0.6% of a surfactant, 0.01-0.5% of sodium carbonate, 1.0-3.0% of an accelerator, 0.1-0.6% of a dispersing agent and the balance of deionized water. The cleaning agent can be mixed with alkali solution, hydrogen peroxide and deionized water in proportion for cleaning before and after the solar cell silicon wafer is made into wool. The cleaning agent is a water-soluble, nontoxic and harmless auxiliary agent which is multicomponent and meets the environmental protection requirement, and can effectively remove inorganic particles and organic stains adsorbed on the surface of the silicon wafer by combining with the prior art.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a cleaning agent for cleaning a solar cell silicon wafer before and after texturing and a matched application thereof.
Technical Field
Currently, the global energy demand is continuously expanding, while the reserves of the traditional energy are relatively limited and the climate change is serious, the development of renewable energy is an important task for promoting the energy production and consumption revolution, accelerating the energy transformation and upgrading and realizing the green development. Photovoltaic power generation has good development prospect as a novel renewable energy source, and the photovoltaic power generation method has the advantages of improving the conversion efficiency of the battery piece and reducing the cost for a photovoltaic battery enterprise.
The preparation process of the solar cell generally comprises the following steps: cleaning and texturing, diffusion texturing, peripheral etching, back passivation, deposition of an anti-reflection film, screen printing/sintering and the like, wherein the cleaning and texturing comprises a silicon wafer cleaning process and a texturing process. The cleaning effect of the silicon wafer and the quality of the textured surface directly influence the conversion efficiency of the solar cell.
The main purpose of the silicon wafer cleaning is to remove metal particles and damaged layers generated by the abrasion of the silicon wafer cutting line and the silicon wafer, auxiliary agents and adhesive residues used in the cutting process, and pollutants such as dust, finger print adhesion and the like in the carrying process. At present, the surface of the silicon wafer is generally pre-cleaned by adopting a mixed solution of alkali, hydrogen peroxide and deionized water. Although the pre-cleaning mode can remove the surface damage layer and remove surface pollutants to a certain extent, the process has the disadvantages of large consumption of alkali and hydrogen peroxide and high cost. In addition, the reactant washed away by the traditional process is not easy to dissolve, and can be secondarily attached to the surface of the silicon wafer, so that efficiency is lost.
Disclosure of Invention
In order to overcome the defects, the invention aims to provide the solar cell silicon wafer cleaning agent and the application thereof, wherein the cleaning agent is a multi-component water-soluble, nontoxic and harmless auxiliary agent meeting the environmental protection requirement, and can effectively remove inorganic particles and organic stains adsorbed on the surface of a silicon wafer by combining with the prior art.
In order to achieve the above object, the present invention relates to the following technical solutions:
the solar cell silicon wafer cleaning agent comprises, by mass, 0.15-0.4% of chelating agent, 2.0-4.0% of wetting agent, 0.02-0.6% of surfactant, 0.01-0.5% of sodium carbonate, 1.0-3.0% of accelerator, 0.1-0.6% of dispersing agent and the balance of deionized water.
As a further improvement of the invention: the surfactant is a compound of anionic surfactant or nonionic surfactant and polyvinylpyrrolidone, wherein the polyvinylpyrrolidone accounts for 2-8% of the mass of the surfactant.
The surfactant has an amphoteric group: hydrophilic groups and lipophilic groups can obviously reduce the surface tension of a contact interface and increase the solubility of organic pollutants in an aqueous phase. Polyvinylpyrrolidone belongs to a high molecular surfactant, has strong adsorption effect on various surfaces or interfaces, can further separate pollutants from the silicon surface, further clean the silicon surface and reduce the roughness of the silicon surface.
The polyvinylpyrrolidone has good cooperativity, good dispersibility and solubilization, further reduces the surface tension of the cleaning agent, can rapidly strip off pollutants on the surface of the silicon wafer, and improves the cleaning efficiency.
The polyvinylpyrrolidone and other surfactants have stronger dehydrogenation capability after being matched, which is beneficial to the rapid growth of pyramid structures, shortens the texturing time and finally obtains uniform and tidy pyramid texture.
As a preferred embodiment of the present invention: the anionic surfactant or nonionic surfactant is one or more of sodium dodecyl sulfate, sodium lauryl sulfate, sodium oleate, alcohol polyoxyethylene ether, alkyl polyglycoside or coco diethanol amine.
As a preferred embodiment of the present invention: the chelating agent is one or a combination of more than two of organic acid ammonium salt, organic acid potassium salt, organic acid sodium salt and organic acid lithium salt. The chelating agent can chelate metal ions, so that the surface of the silicon wafer has no metal residue.
As a preferred embodiment of the present invention: the wetting agent is polyoxyethylene alkyl ether. The wetting agent is mainly used for reducing the surface tension or interfacial tension of water, so that the surface of the silicon wafer is more easily wetted and cleaned by the cleaning liquid.
As a preferred embodiment of the present invention: the accelerator is polysulfide polymer or urethane. The accelerator has the main effects of improving the reaction rate, improving the cleaning effect and reducing the dosage of chemicals.
As a preferred embodiment of the present invention: the dispersing agent is sodium tripolyphosphate, sodium hexametaphosphate or sodium pyrophosphate. The dispersing agent mainly acts to disperse inorganic, organic solid and liquid particles which are difficult to dissolve in liquid, can prevent sedimentation and agglomeration of the particles, and can increase the particle removing capability of the particles when being added into water, so that the adsorption of reaction byproducts to silicon interfaces is dispersed.
A solar cell silicon wafer cleaning agent application, which is used for cleaning a solar cell silicon wafer before and after texturing, wherein the cleaning agent is prepared by mixing the cleaning agent according to any one of claims 1 to 8 with alkali solution, hydrogen peroxide and deionized water in proportion, and the cleaning agent comprises the following components: alkaline solution: hydrogen peroxide: deionized water is configured according to the volume ratio of 2-3:1:3-5:450-500.
As a preferred embodiment of the present invention: the alkali solution is sodium hydroxide or potassium hydroxide solution with the mass concentration of 28-30%, and the mass concentration of the hydrogen peroxide is 28-30%.
Compared with the prior art, the invention has the advantages that:
1. the cleaning agent disclosed by the invention is a water-soluble, nontoxic and harmless auxiliary agent which is multicomponent and meets the environmental protection requirement, and can effectively remove inorganic particles and organic stains adsorbed on the surface of a silicon wafer, so that the cleaning efficiency before and after texturing is further improved.
2. The cleaning agent can be directly compounded with alkali solution and hydrogen peroxide, and meanwhile, the silicon wafer is directly cleaned in a cleaning tank by adopting the existing cleaning process, and cleaned objects cannot be secondarily attached to the silicon wafer, so that the battery efficiency is further improved.
3. The cleaning agent can greatly reduce the consumption of alkali solution and hydrogen peroxide, reduce the production cost, improve the cleaning efficiency before and after the solar silicon wafer texturing and obtain uniform and tidy pyramid suede.
4. Sodium carbonate is also added into the cleaning agent component, so that on one hand, the cleaning capability of the surfactant can be enhanced, the cleaning effect can be enhanced, and on the other hand, the dosage of the alkali solution can be reduced.
Drawings
FIG. 1 is a graph of chemical consumption versus various examples;
FIG. 2 is a graph of product performance tracking versus various embodiments;
FIG. 3 is a graph showing the follow-up comparison of the cleaning effect after the use of the present cleaning agent.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the detailed description, and it is apparent that the described embodiments are only some embodiments of the present invention, and all other embodiments obtained by persons skilled in the art without making any inventive effort are within the scope of protection of the present invention based on the embodiments of the present invention.
Example 1:
the embodiment relates to a solar cell silicon wafer cleaning agent, which comprises, by mass, 0.2% of a chelating agent, 3.0% of a wetting agent, 0.2% of a surfactant, 0.1% of sodium carbonate, 1.5% of an accelerator, 0.2% of a dispersing agent and the balance of deionized water.
The surfactant is further limited in the invention because the surfactant has strong function, and the surfactant is an anionic surfactant or a non-ionic surfactant or a compound of polyvinylpyrrolidone, wherein the polyvinylpyrrolidone accounts for 3% of the mass of the surfactant. The hydrophilic group and the lipophilic group of the surfactant are utilized in the cleaning agent, so that the surface tension of a contact interface can be obviously reduced, and the solubility of organic pollutants in a water phase is increased; meanwhile, the surfactant also has the effects of emulsification, dispersion and the like.
Polyvinylpyrrolidone belongs to a high molecular surfactant, has strong adsorption effect on various surfaces or interfaces, can further separate pollutants from the silicon surface, further clean the silicon surface and reduce the roughness of the silicon surface. The polyvinylpyrrolidone has good cooperativity with other surfactants, and has good dispersibility and solubilization, so that the surface tension of the cleaning agent is further reduced, the pollutants on the surface of the silicon wafer can be rapidly stripped, and the cleaning efficiency is improved.
The surfactant is various and has a wide selection range, but for better synergistic effect with polyvinylpyrrolidone, the anionic surfactant or nonionic surfactant is preferably one or a combination of two or more of sodium dodecyl sulfate, sodium lauryl sulfate, sodium oleate, alcohol polyoxyethylene ether, alkyl polyglycoside or coco diethanol amine. Alkyl polyglycosides can have a promoting effect on various surfactants. The surfactant in this example was chosen to be sodium dodecyl sulfate.
In addition, because a large amount of hydrogen is generated by the reaction of the alkali solution and the solar panel, the surface tension of the solution is increased, so that a large amount of white spots are generated on the surface after the texturing process, and the appearance and the performance of the battery are affected; proved by verification, the method has stronger dehydrogenation capability after the polyvinylpyrrolidone and the sodium dodecyl sulfate are matched, is favorable for the rapid growth of pyramid structures, shortens the texturing time, and finally obtains uniform and tidy pyramid suede.
In this embodiment, the molecular weight of polyvinylpyrrolidone is about 3000, and the addition amount of polyvinylpyrrolidone and sodium dodecyl sulfate affects the viscosity of the cleaning agent, so that the polyvinylpyrrolidone ratio needs to be controlled in a suitable range.
The chelating agent is selected to chelate metal ions, and can be one or more of organic acid ammonium salt, organic acid potassium salt, organic acid sodium salt and organic acid lithium salt, so that no metal residue exists on the surface of the silicon wafer, and sodium benzoate is selected in the embodiment.
The wetting agent in the cleaning agent is preferably polyoxyethylene alkyl ether, which can cooperate with the surfactant to further reduce the surface tension or interfacial tension of water, so that the surface of the silicon wafer is easier to be wetted and cleaned by the cleaning agent, and the cleaning efficiency is improved.
As the accelerator, the preferred urethane of this example has the chemical properties of ester and amide, and is co-heated with alkali, so that the reaction rate is improved, the cleaning effect is improved, and the dosage of chemicals is reduced.
The dispersant mainly acts to disperse inorganic, organic solid and liquid particles which are difficult to dissolve in liquid, and can prevent the cleaned object from being secondarily attached to the silicon wafer, so that the cleaning effect is improved, and the sodium pyrophosphate is selected in the embodiment.
The specific application process of the solar cell silicon wafer cleaning agent in the embodiment is as follows:
1) Preparing cleaning liquid: according to the volume ratio, cleaning agent: alkaline solution: hydrogen peroxide: deionized water=2.5:1:4:480, wherein the alkaline solution is sodium hydroxide solution with the mass concentration of 30%, and the mass concentration of hydrogen peroxide is 30%;
2) Adding the cleaning liquid 285L into a cleaning tank, putting 400 pieces of silicon wafers into the cleaning tank in each batch, heating to 65 ℃, and cleaning for 2 minutes to remove dirt, oil stains and partial mechanical damage layers on the surfaces of the silicon wafers;
3) Washing for 2 minutes at normal temperature, and reducing attachments and chemical residues reacted off the surface;
4) Texturing the washed silicon wafer;
5) Washing for 2 minutes at normal temperature, and reducing attachments and chemical residues reacted off the surface;
6) Removing organic matter residues on the surface of the silicon wafer after texturing by adopting the cleaning liquid prepared in the step 1), wherein the required temperature is 65 ℃ and the cleaning time is 3 minutes;
7) Washing with water and acid;
8) Washing with water and drying.
On the basis of the embodiment, in order to further improve the cleaning effect by considering the consumption of the solar cell silicon wafer cleaning liquid in each batch cleaning process, after 400 wafers are cleaned in each batch, each cleaning component is automatically supplemented according to 20 ml/batch of the cleaning liquid, 40 ml/batch of alkali, 300 ml/batch of hydrogen peroxide and 1500 ml/batch of water, so that the liquid supplementing cleaning function is completed in a circulating way.
Example 2:
on the basis of example 1, the ratio of the cleaning liquid to be disposed was adjusted: according to the volume ratio, cleaning agent: alkaline solution: hydrogen peroxide: deionized water=2.0:1:5:480, wherein the alkaline solution is sodium hydroxide solution with the mass concentration of 30%, and the mass concentration of hydrogen peroxide is 30%.
Comparative example:
on the basis of example 1, the ratio of the cleaning liquid to be disposed was adjusted: according to the volume ratio, cleaning agent: alkaline solution: hydrogen peroxide: deionized water=4.0:1:4.5:500, wherein the alkaline solution is sodium hydroxide solution with the mass concentration of 30%, and the mass concentration of hydrogen peroxide is 30%.
Comparative experimental analysis was also performed on the above examples and comparative examples, and specific experimental results are shown in fig. 1, fig. 2 and fig. 3.
As can be seen directly from fig. 1 to 3, the use of the cleaning agent is obviously superior to the conventional common cleaning process in terms of cost reduction and synergy. In addition, it can be found by experiments that: too little detergent proportion can not achieve the best effect, too much detergent has no obvious advantage.
As can be seen from example 1:
after the silicon wafer cleaning agent is used, the consumption of alkali solution is reduced by 90 percent, and the consumption of hydrogen peroxide is reduced by 70 percent.
After the silicon wafer cleaning agent is used, the conversion efficiency of the solar cell is improved by 0.06-0.1%.
After the silicon wafer cleaning agent is used, the cleaning capacity of a cleaning tank is improved to a great extent, and the appearance yield of the battery piece production is improved by about 0.1%.
The present invention is not limited to the preferred embodiments described above, and any modifications, which are not essential to the invention, should be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (9)
1. The solar cell silicon wafer cleaning agent is characterized by comprising, by mass, 0.15-0.4% of chelating agent, 2.0-4.0% of wetting agent, 0.02-0.6% of surfactant, 0.01-0.5% of sodium carbonate, 1.0-3.0% of accelerator, 0.1-0.6% of dispersing agent and the balance of deionized water.
2. The solar cell silicon wafer cleaning agent according to claim 1, wherein the surfactant is an anionic surfactant or a nonionic surfactant or a combination of polyvinylpyrrolidone, and the polyvinylpyrrolidone accounts for 2-8% of the mass of the surfactant.
3. The solar cell silicon wafer cleaning agent according to claim 2, wherein the anionic surfactant or nonionic surfactant is one or a combination of two or more of sodium dodecyl sulfate, sodium lauryl sulfate, sodium oleate, alcohol polyoxyethylene ether, alkyl polyglucoside or coco diethanol amine.
4. The solar cell silicon wafer cleaning agent according to claim 1, wherein the chelating agent is one or a combination of more than two of organic acid ammonium salt, organic acid potassium salt, organic acid sodium salt and organic acid lithium salt.
5. The solar cell silicon wafer cleaning agent according to claim 1, wherein the wetting agent is polyoxyethylene alkyl ether.
6. The solar cell silicon wafer cleaning agent according to claim 1, wherein the accelerator is a polysulfide polymer or urethane.
7. The solar cell silicon wafer cleaning agent according to claim 1, wherein the dispersing agent is sodium tripolyphosphate, sodium hexametaphosphate or sodium pyrophosphate.
8. The application of the solar cell silicon wafer cleaning agent is characterized in that the cleaning agent as claimed in any one of claims 1 to 8 is mixed with alkali solution, hydrogen peroxide and deionized water in proportion for cleaning before and after the solar cell silicon wafer is textured, wherein the cleaning agent comprises the following components: alkaline solution: hydrogen peroxide: deionized water is configured according to the volume ratio of 2-3:1:3-5:450-500.
9. The application of the solar cell silicon wafer cleaning agent according to claim 8, wherein the alkaline solution is sodium hydroxide or potassium hydroxide solution with the mass concentration of 28-30%, and the mass concentration of hydrogen peroxide is 28% -30%.
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